WO2008145231A2 - Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium - Google Patents

Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium Download PDF

Info

Publication number
WO2008145231A2
WO2008145231A2 PCT/EP2008/003113 EP2008003113W WO2008145231A2 WO 2008145231 A2 WO2008145231 A2 WO 2008145231A2 EP 2008003113 W EP2008003113 W EP 2008003113W WO 2008145231 A2 WO2008145231 A2 WO 2008145231A2
Authority
WO
WIPO (PCT)
Prior art keywords
treatment liquid
compounds
silicon wafers
silicon wafer
additive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/003113
Other languages
German (de)
English (en)
Other versions
WO2008145231A3 (fr
Inventor
Holger Fröhlich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gebrueder Schmid GmbH and Co
Original Assignee
Gebrueder Schmid GmbH and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gebrueder Schmid GmbH and Co filed Critical Gebrueder Schmid GmbH and Co
Publication of WO2008145231A2 publication Critical patent/WO2008145231A2/fr
Publication of WO2008145231A3 publication Critical patent/WO2008145231A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Treatment fluid and silicon wafers are processed for the treatment of silicon wafers.
  • the invention relates to a method for the treatment of silicon wafers, as they are used in particular for the production of solar cells, wherein a treatment liquid is applied to the surface of the silicon wafer. Furthermore, the invention relates to a corresponding treatment liquid and silicon wafers which have been produced by such a method or have been treated with such a treatment liquid.
  • the invention has for its object to provide an aforementioned method, a corresponding treatment liquid and a silicon wafer treated therewith, with which problems of the prior art can be avoided and in particular an even better texturing than with, for example, isopropanol can be achieved as ⁇ tzinhibitor.
  • This object is achieved by a method having the features of claim 1, a treatment liquid having the features of claim 17 and a silicon wafer having the features of claim 19.
  • Advantageous and preferred embodiments of the invention are the subject matter of the further claims.
  • the treatment liquid has as an etchant inhibitor an additive which comprises at least one water-soluble hydroxy compound from the group comprising hydroxycarbonyls, hydroxyaromatics, alicyclic hydroxy compounds, aliphatic polyhydroxy compounds and aliphatic-aromatic hydroxy compounds.
  • the treatment liquid has as etchant, in particular potassium hydroxide.
  • the treatment liquid is preferably an aqueous solution which, in particularly preferred embodiments, is completely free of organic monohydroxyaliphates, in particular those having 1 to 6, preferably 1 to 3, C atoms.
  • hydroxycarbonyls mentioned above are preferably hydroxyaldehydes or hydroxyketones. Suitable are u.a. Monohydroxyaldehydes and / or ketones.
  • hydroxycarbonyenes which can be used according to the invention preferably have two or more hydroxyl groups. Particular preference is given to using polyhydroxy aldehydes, in particular aldoses, or polyhydroxy ketones, in particular ketoses.
  • Aldoses and ketoses can occur either aliphatically or in cyclic hemiacetal form.
  • cyclic hemiacetal form they represent the group of monosaccharides from which oligosaccharides and polysaccharides can be built up, which can likewise have an etch inhibitor function in the context of an anisotropic texture process or etching process.
  • cellulose should be emphasized.
  • the hydroxyaromatics are, in particular, aromatics having one to four benzene nuclei. According to the invention, both linearly and angularly fused polynuclear aromatics may be preferred.
  • the polynuclear hydroxyaromatics mention may be made in particular of hydroxy derivatives of naphthalene, anthracene and phenanthrene.
  • the hydroxyaromatics are preferably phenols, in particular hydroxybenzene compounds having only one OH group.
  • hydroxyaromatics having two or more OH groups, in particular having 2 or 3 OH groups may also be preferred.
  • resorcinols, pyrocatechols, hydroquinones, phloroglucins and pyrogalloids are especially suitable.
  • the hydroxyaromatics have, in addition to the at least one OH group, one or more substituents other than OH.
  • the hydroxyaromatics may in particular have alkyl, cycloalkyl, alkenyl and also aryl substituents. Particularly preferred are alkyl substituents having 1 to 10 carbon atoms.
  • the alkyl substituents may be both linear and branched.
  • the non-OH substituents themselves have one or more other OH groups.
  • the alicyclic hydroxy compounds are preferably polyhydroxy compounds.
  • the aliphatic polyhydroxy compounds are, in particular, compounds having 2 to 6 hydroxyl groups.
  • Particularly preferred aliphatic polyhydroxy compounds are reduced mono- oligo- or polysaccharides.
  • Particularly suitable are, in particular, reduced polyhydroxycarbonyls, of which in particular the class of alditols is to be emphasized.
  • sorbitol is used as the aliphatic polyhydroxy compound.
  • Sorbitol is an alditol with the empirical formula CeHi 4 Oe and is often referred to as n-hexane-hexol. It has a very good solubility in water and is very inexpensive. Sorbitol can probably left-handed as L-shape as well as right-handed as R-shape occur This changes the adsorption behavior on the surface of the silicon wafers and thus improves the etching behavior.
  • the amount of additive in the treatment liquid can be between 1% and 15%.
  • the amount of additive in the treatment liquid can be between 1% and 15%.
  • between 5% and 10% of addition to the treatment liquid is added.
  • the process is carried out with a heating of the treatment liquid.
  • it can be heated to a temperature between 60 C and 95 ° C, particularly advantageously to about 90 0 C.
  • the etching process is improved and accelerated.
  • the treatment liquid relatively fast to renew or swap or circulate on the surface of the silicon wafer.
  • a targeted flow against treatment liquid can take place, for example as a turbulent flow or by so-called swelling. This can odgl by special nozzles or so-called bulge devices with slots. in the vicinity of the surface of the silicon wafer, also in a full bath, or generally by moving the treatment liquid, for example by stirring or the like.
  • the silicon wafers are aligned horizontally in the treatment with the above-described treatment liquid, preferably in a continuous process.
  • a horizontal method in particular as a continuous process, offers over the known vertical immersion method with such a treatment liquid with clocking operation great advantages, namely a better replacement of the treatment liquid on the wafer surface by the horizontal position and a faster treatment by the possibility of the continuous process.
  • FIG. 1 is a side view of a texturing of a silicon wafer on its underside by spraying with a treatment liquid according to the invention
  • FIG. 2 shows a modification of the texturing from FIG. 1 with silicon wafers immersed in treatment liquid, together with turbulent flow.
  • a treatment device 11 is shown with transport rollers 12, which form a transport path which extends above a receptacle, not shown, for the treatment liquid.
  • transport rollers 12 On the transport rollers 12, a silicon wafer 17 is transported along the transport path with the transport direction to the right, as the arrow illustrates. Its rear side 18 points downwards or lies on the transport rollers 12 and the front side 19 to be treated lies above. However, under certain circumstances, the silicon wafer 17 can also be transported downwards with the front side 19 and treated.
  • Nozzle devices 20 are provided above the transport rollers 12 and thus also above the silicon wafers 17. They each produce a liquid curtain 16 of treatment liquid, which is brought to the front sides 19 of the silicon wafer 17. There, the treatment liquid 15 effects a texturing of the front side 19 of the silicon wafer 17 mentioned at the outset.
  • This alkaline texturing process of monocrystalline wafers is, as explained above, hitherto known only with a vertical position of the wafer, in dipping processes and not in continuous processes.
  • Other nozzle devices 20 ' which are shown in dashed lines, under the transport rollers 12 and thus also be provided under the silicon wafers 17. They protrude upwards and can each generate a liquid veil 16 'from treatment liquid, in order to texturize the back side 18, if necessary.
  • the novel composition according to the invention of the treatment liquid which has, for example, between 5% and 10% sorbitol, the predominant part consisting of potassium hydroxide, texturing takes place particularly well and very quickly.
  • FIG. 1 An alternative treatment device 111 is shown in FIG.
  • transport rollers 112 are provided, which form a transport path, on which a silicon wafer 117 is transported with a front side 119 upwards.
  • the silicon wafer 117 may also be transported downwards and treated with the front side 119.
  • the transport path and thus the silicon wafer 117 run immersed in a bath 114 with treatment liquid 115.
  • both the front side 119 and a rear side 118 are textured.
  • the silicon wafer 117 in FIG. 2 is already in the bath 114 or the treatment liquid 115.
  • the treatment liquid 115 there is also a certain exchange of treatment liquid on the front side 119 and the back side 118, which favorably influences the texturing.
  • nozzle devices 120 are provided above the silicon wafer 117 and further nozzle devices 120 'below.
  • this stream of treatment liquid 115 approximately corresponds to the liquid curtain 16 of FIG.
  • Figs. 1 and 2 can also be easily taken, as here the silicon wafers are treated in the horizontal flow process or are treated with the treatment liquid with alkaline additive. Whether this is done by spraying or humidifying or in the dipping process does not play a significant role.
  • sorbitol which is in the form of a powder
  • an admixture can easily be carried out from a tank into the treatment liquid, either in a separate container or directly into the bath.
  • a measurement of the concentration of sorbitol should be made to meet a predetermined value.

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention vise à perfectionner un processus de texturation de tranches de silicium (17) pour produire des piles solaires, et notamment à accélérer et à augmenter la densité de la structure pyramidale. A cet effet, il est prévu d'ajouter comme additif à un liquide de traitement alcalin, au moins un composé hydroxy soluble dans l'eau, issu du groupe comprenant les hydroxycarbonyles, les hydroxyaromates, les composés hydroxy alicycliques, les composés polyhydroxy aliphatiques, ainsi que les composés hydroxy aliphatiques-aromatiques, de préférence du sorbitol. La proportion d'additif peut ne s'élever qu'à quelques pour cent.
PCT/EP2008/003113 2007-05-25 2008-04-18 Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium Ceased WO2008145231A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007026081A DE102007026081A1 (de) 2007-05-25 2007-05-25 Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
DE102007026081.6 2007-05-25

Publications (2)

Publication Number Publication Date
WO2008145231A2 true WO2008145231A2 (fr) 2008-12-04
WO2008145231A3 WO2008145231A3 (fr) 2009-04-02

Family

ID=39874935

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/003113 Ceased WO2008145231A2 (fr) 2007-05-25 2008-04-18 Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium

Country Status (3)

Country Link
DE (1) DE102007026081A1 (fr)
TW (1) TW200913045A (fr)
WO (1) WO2008145231A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102916075A (zh) * 2012-09-27 2013-02-06 奥特斯维能源（太仓）有限公司 一种制绒深度稳定的方法
WO2013053472A1 (fr) 2011-10-12 2013-04-18 Schott Solar Ag Procédé de traitement de tranches de silicium, liquide de traitement et tranches de silicium

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008022282A1 (de) 2008-04-24 2009-10-29 Gebr. Schmid Gmbh & Co. Einrichtung und Verfahren zur Behandlung von Silizium-Wafern oder flachen Gegenständen
DE102009012827A1 (de) 2009-03-03 2010-10-07 Gebr. Schmid Gmbh & Co. Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür
DE102009028762A1 (de) * 2009-08-20 2011-03-03 Rena Gmbh Verfahren zum Ätzen von Siliziumoberflächen
CN101635322B (zh) * 2009-08-26 2011-01-05 北京中联科伟达技术股份有限公司 一种多晶太阳能电池片的链式制绒的方法及装置
DE102009060931A1 (de) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten
DE102011000861A1 (de) * 2011-02-22 2012-08-23 Rena Gmbh Verfahren zum Behandeln eines Objekts, insbesondere eines Solarzellensubstrats, und Vorrichtung zur Durchführung des Verfahrens
DE102012107537A1 (de) * 2012-08-16 2014-05-22 Hanwha Q Cells Gmbh Verfahren zur Oberflächenbehandlung eines monokristallinen Halbleiterwafers und Verfahren zur Herstellung einer monokristallinen Halbleiterwafer-Solarzelle
CN103811583A (zh) * 2012-11-12 2014-05-21 北京北方微电子基地设备工艺研究中心有限责任公司 一种硅片制绒方法及硅片制绒装置
DE102014119090B4 (de) 2014-12-18 2022-12-01 Hanwha Q Cells Gmbh In-line-Nassbankvorrichtung und Verfahren für die nasschemische Bearbeitung von Halbleiterwafern
DE102016105866B3 (de) * 2016-03-31 2017-07-06 Technische Universität Bergakademie Freiberg Siliziumwafer, Verfahren zum Strukturieren eines Siliziumwafers und Solarzelle

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
DE19811878C2 (de) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
JP3948890B2 (ja) * 2000-08-09 2007-07-25 三洋電機株式会社 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
JP3740138B2 (ja) * 2003-06-25 2006-02-01 直江津電子工業株式会社 テクスチャー形成用エッチング液
JP4394693B2 (ja) * 2004-10-28 2010-01-06 三益半導体工業株式会社 半導体基板の製造方法及びエッチング液
CN1983644A (zh) * 2005-12-13 2007-06-20 上海太阳能科技有限公司 制作单晶硅太阳电池绒面的方法
JP4326545B2 (ja) * 2006-02-23 2009-09-09 三洋電機株式会社 凹凸基板の製造方法及び光起電力素子の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013053472A1 (fr) 2011-10-12 2013-04-18 Schott Solar Ag Procédé de traitement de tranches de silicium, liquide de traitement et tranches de silicium
DE102011084346A1 (de) 2011-10-12 2013-04-18 Schott Solar Ag Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
CN102916075A (zh) * 2012-09-27 2013-02-06 奥特斯维能源（太仓）有限公司 一种制绒深度稳定的方法

Also Published As

Publication number Publication date
WO2008145231A3 (fr) 2009-04-02
DE102007026081A1 (de) 2008-11-27
TW200913045A (en) 2009-03-16

Similar Documents

Publication Publication Date Title
WO2008145231A2 (fr) Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium
EP2517226B1 (fr) Procédé et dispositif pour le traitement de substrats de silicium
DE102007063202A1 (de) Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern
CH384419A (de) Verfahren und Vorrichtung zur Erzeugung von Überzügen
DE69507445T2 (de) Reinigungsverfahren für ein Halbleitersubstrat
DE102014110222B4 (de) Verfahren und Vorrichtung zur Strukturierung von Ober- und Unterseite eines Halbleitersubstrats
DE2127491B2 (de) Verfahren und vorrichtung zum herstellen von floatglas
EP2212927B1 (fr) Procédé et dispositif de revêtement d'un support pour cellules solaires à couches minces
EP2404325B1 (fr) Procédé pour texturer des plaquettes de silicium, liquide de traitement correspondant et utilisation dudit liquide
WO2019145485A1 (fr) Procédé et dispositif pour traiter des surfaces gravées d'un substrat semi-conducteur faisant appel à un fluide contenant de l'ozone
WO2013053472A1 (fr) Procédé de traitement de tranches de silicium, liquide de traitement et tranches de silicium
WO2009077199A2 (fr) Procédé et installation de traitement ou de purification de blocs de silicium
DE10250281A1 (de) Beschichtungsverfahren und Beschichtungsmittel
WO2009003646A2 (fr) Procédé et dispositif de séchage de la surface d'un substrat
EP0593945B1 (fr) Procédé et appareillage de préparation de bains de teinture
DE102015209354A1 (de) Cleaning-in-place-Verfahren
DE1544267C3 (de) Verfahren zum Dotieren eines Halbleiterkörpers
EP2452356B1 (fr) Procédé et dispositif pour traiter des substrats
DE69511372T2 (de) Vorrichtung zur beschleunigten Kühlung eines kontinuierlich schnell fortbewegten Materials in vertikaler Richtung
AT304636B (de) Verfahren zum reinigen von geaetzten siliziumoberflaechen
AT203365B (de) Verfahren zur Naßbehandlung photographischer Schichten
CH428186A (de) Verfahren zur Herstellung hochtransparenter Flachfolien
DE921024C (de) Verfahren zur Herstellung von Kieselsaeurehydrosolen, die im wesentlichen alkalifrei sind
AT201287B (de) Verfahren zur Herstellung von Filmen
CH340689A (de) Verfahren und Vorrichtung zur Feuerverzinkung

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08748976

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08748976

Country of ref document: EP

Kind code of ref document: A2