WO2009041694A1 - ＺｎＯ蒸着材とその製造方法、およびＺｎＯ膜 - Google Patents

ＺｎＯ蒸着材とその製造方法、およびＺｎＯ膜 Download PDF

Info

Publication number
WO2009041694A1
WO2009041694A1 PCT/JP2008/067685 JP2008067685W WO2009041694A1 WO 2009041694 A1 WO2009041694 A1 WO 2009041694A1 JP 2008067685 W JP2008067685 W JP 2008067685W WO 2009041694 A1 WO2009041694 A1 WO 2009041694A1
Authority
WO
WIPO (PCT)
Prior art keywords
zno
vapor deposition
additive elements
deposition material
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067685
Other languages
English (en)
French (fr)
Inventor
Yoshitaka Mayuzumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008245299A external-priority patent/JP5418747B2/ja
Priority claimed from JP2008245306A external-priority patent/JP5516838B2/ja
Priority claimed from JP2008245304A external-priority patent/JP5499453B2/ja
Priority claimed from JP2008245305A external-priority patent/JP5418752B2/ja
Priority claimed from JP2008245303A external-priority patent/JP5418751B2/ja
Priority claimed from JP2008245302A external-priority patent/JP5418750B2/ja
Priority claimed from JP2008245300A external-priority patent/JP5418748B2/ja
Priority claimed from JP2008245301A external-priority patent/JP5418749B2/ja
Priority to EP08834432.0A priority Critical patent/EP2194158B1/en
Priority to KR1020127022931A priority patent/KR101342721B1/ko
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to US12/733,897 priority patent/US8231812B2/en
Priority to CN2008801088239A priority patent/CN101809186B/zh
Publication of WO2009041694A1 publication Critical patent/WO2009041694A1/ja
Anticipated expiration legal-status Critical
Priority to US13/360,001 priority patent/US8409477B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/02—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by adding chemical blowing agents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/6261—Milling
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
    • C04B35/6263—Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
    • C04B35/6264—Mixing media, e.g. organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/62655—Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62695—Granulation or pelletising
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/009—Porous or hollow ceramic granular materials, e.g. microballoons
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/08—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by adding porous substances
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3229—Cerium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5427—Particle size related information expressed by the size of the particles or aggregates thereof millimeter or submillimeter sized, i.e. larger than 0,1 mm
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5463—Particle size distributions
    • C04B2235/5481—Monomodal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C04B2235/604—Pressing at temperatures other than sintering temperatures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

　透明導電膜等の成膜に用いられるＺｎＯ蒸着材であって、Ｃｅ、Ｌａ、Ｙ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍから選択される一種又は二種以上の第一添加元素、および、Ａｌ、Ｇａ、Ｓｃ、Ｂから選択される一種又は二種以上の第二添加元素を含み、第一添加元素の含有量は第二添加元素の含有量より多く、第一添加元素の含有量が０.１～１４.９質量％、第二添加元素の含有量が０.１～１０質量％の範囲内であるＺｎＯ多孔質焼結体を主体とする。該焼結体は３～５０％の気孔率を有する。
PCT/JP2008/067685 2007-09-27 2008-09-29 ＺｎＯ蒸着材とその製造方法、およびＺｎＯ膜 Ceased WO2009041694A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08834432.0A EP2194158B1 (en) 2007-09-27 2008-09-29 ZnO VAPOR DEPOSITION MATERIAL AND PROCESS FOR PRODUCING THE SAME
CN2008801088239A CN101809186B (zh) 2007-09-27 2008-09-29 ZnO蒸镀材料和其制造方法、和ZnO膜
US12/733,897 US8231812B2 (en) 2007-09-27 2008-09-29 ZnO vapor deposition material, process for producing the same, and ZnO film
KR1020127022931A KR101342721B1 (ko) 2007-09-27 2008-09-29 ＺｎＯ 증착재와 그 제조 방법, 및 ＺｎＯ 막
US13/360,001 US8409477B2 (en) 2007-09-27 2012-01-27 ZnO vapor deposition material, process for producing the same, and ZnO film

Applications Claiming Priority (32)

Application Number Priority Date Filing Date Title
JP2007252766 2007-09-27
JP2007252762 2007-09-27
JP2007-252761 2007-09-27
JP2007252765 2007-09-27
JP2007252761 2007-09-27
JP2007-252763 2007-09-27
JP2007252764 2007-09-27
JP2007-252762 2007-09-27
JP2007-252760 2007-09-27
JP2007-252764 2007-09-27
JP2007-252766 2007-09-27
JP2007-252759 2007-09-27
JP2007-252765 2007-09-27
JP2007252763 2007-09-27
JP2007252760 2007-09-27
JP2007252759 2007-09-27
JP2008-245300 2008-09-25
JP2008-245302 2008-09-25
JP2008245301A JP5418749B2 (ja) 2007-09-27 2008-09-25 ＺｎＯ蒸着材とその製造方法、およびそのＺｎＯ膜形成方法
JP2008245302A JP5418750B2 (ja) 2007-09-27 2008-09-25 ＺｎＯ蒸着材とその製造方法、およびそのＺｎＯ膜形成方法
JP2008-245301 2008-09-25
JP2008245300A JP5418748B2 (ja) 2007-09-27 2008-09-25 ＺｎＯ蒸着材とその製造方法、およびそのＺｎＯ膜形成方法
JP2008245305A JP5418752B2 (ja) 2007-09-27 2008-09-25 ＺｎＯ蒸着材とその製造方法、およびそのＺｎＯ膜形成方法
JP2008245303A JP5418751B2 (ja) 2007-09-27 2008-09-25 ＺｎＯ蒸着材とその製造方法、およびそのＺｎＯ膜形成方法
JP2008-245303 2008-09-25
JP2008245299A JP5418747B2 (ja) 2007-09-27 2008-09-25 ＺｎＯ蒸着材とその製造方法、およびそのＺｎＯ膜形成方法
JP2008-245304 2008-09-25
JP2008245306A JP5516838B2 (ja) 2007-09-27 2008-09-25 ＺｎＯ蒸着材の製造方法
JP2008-245305 2008-09-25
JP2008-245306 2008-09-25
JP2008245304A JP5499453B2 (ja) 2007-09-27 2008-09-25 ＺｎＯ蒸着材とその製造方法、およびそのＺｎＯ膜形成方法
JP2008-245299 2008-09-25

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/733,897 A-371-Of-International US8231812B2 (en) 2007-09-27 2008-09-29 ZnO vapor deposition material, process for producing the same, and ZnO film
US13/360,001 Division US8409477B2 (en) 2007-09-27 2012-01-27 ZnO vapor deposition material, process for producing the same, and ZnO film

Publications (1)

Publication Number Publication Date
WO2009041694A1 true WO2009041694A1 (ja) 2009-04-02

Family

ID=42136348

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067685 Ceased WO2009041694A1 (ja) 2007-09-27 2008-09-29 ＺｎＯ蒸着材とその製造方法、およびＺｎＯ膜

Country Status (6)

Country Link
US (2) US8231812B2 (ja)
EP (2) EP2508497B1 (ja)
KR (2) KR101208380B1 (ja)
CN (1) CN101809186B (ja)
TW (1) TWI431135B (ja)
WO (1) WO2009041694A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021029421A1 (ja) * 2019-08-15 2021-09-13 Ｊｆｅミネラル株式会社 酸化亜鉛焼結体作製用酸化亜鉛粉末および酸化亜鉛焼結体、ならびに、これらの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5573554B2 (ja) * 2010-09-29 2014-08-20 三菱マテリアル株式会社 薄膜形成用の蒸着材及び該薄膜を備える薄膜シート並びに積層シート
CN102723376A (zh) * 2012-06-29 2012-10-10 苏州嘉言能源设备有限公司 太阳能电池光吸收透明薄膜
KR20150005357A (ko) 2013-07-05 2015-01-14 삼성디스플레이 주식회사 컬러필터 기판 및 그 제조방법과 이를 포함하는 표시장치 및 그 제조 방법

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH062130A (ja) 1992-06-15 1994-01-11 Mitsubishi Materials Corp 酸化亜鉛系スパッタリング用ターゲット
JPH11322332A (ja) * 1998-05-21 1999-11-24 Sumitomo Metal Mining Co Ltd ＺｎＯ系焼結体およびその製造方法
JP2004068054A (ja) * 2002-08-02 2004-03-04 Idemitsu Kosan Co Ltd スパッタリングターゲット及び焼結体それらを利用して製造した導電膜。
JP2005330158A (ja) * 2004-05-20 2005-12-02 Ulvac Material Kk 複合酸化物焼結体の製造方法及びその焼結体からなるスパッタリングターゲット
JP2006200016A (ja) * 2005-01-21 2006-08-03 Tosoh Corp ＺｎＯ：Ａｌターゲットおよび薄膜並びに薄膜の製造方法
JP2007252759A (ja) 2006-03-24 2007-10-04 Shinko Chemical Co Ltd 点眼薬容器
JP2007252764A (ja) 2006-03-24 2007-10-04 Brother Ind Ltd ミシン
JP2007252765A (ja) 2006-03-24 2007-10-04 Maerchen World Kk コインストッカー
JP2007252762A (ja) 2006-03-24 2007-10-04 Sankyo Kk 遊技機
JP2007252761A (ja) 2006-03-24 2007-10-04 Maerchen World Kk コインストッカー
JP2007252760A (ja) 2006-03-24 2007-10-04 Shimadzu Corp Ｘ線断層撮影方法およびｘ線断層撮影装置
JP2007252766A (ja) 2006-03-24 2007-10-04 Achilles Corp 靴に取り付ける脚カバー
JP2007252763A (ja) 2006-03-24 2007-10-04 Gifu Univ 医用動画像による画像診断システム
JP2008245305A (ja) 2008-04-28 2008-10-09 Sharp Corp 番組サービス提供システムおよびプログラム
JP2008245302A (ja) 2008-04-18 2008-10-09 Ntt Docomo Inc 送信端末及びデータ送信方法
JP2008245303A (ja) 2003-01-31 2008-10-09 Matsushita Electric Ind Co Ltd 記録媒体、再生装置、プログラム、再生方法
JP2008245299A (ja) 2008-04-15 2008-10-09 Ntt Docomo Inc 移動体通信システムおよびその無線基地局への信号量流入制御方法
JP2008245306A (ja) 2008-04-28 2008-10-09 Sharp Corp 番組サービス提供システムおよびプログラム
JP2008245301A (ja) 2008-04-18 2008-10-09 Seiko Epson Corp 表示パネル、電子機器及び画像データ準備方法
JP2008245300A (ja) 2008-04-16 2008-10-09 Kyocera Corp 無線装置
JP2008245304A (ja) 2008-04-24 2008-10-09 Nikon Corp デジタルカメラの設定方法および情報処理装置
JP2008255475A (ja) * 2007-03-09 2008-10-23 Mitsubishi Materials Corp ＺｎＯ蒸着材及びそれにより形成されたＺｎＯ膜

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664867A (en) * 1969-11-24 1972-05-23 North American Rockwell Composite structure of zinc oxide deposited epitaxially on sapphire
DE3437045A1 (de) 1984-10-09 1986-04-10 Agfa-Gevaert Ag, 5090 Leverkusen Vorrichtung zur entnahme des films aus einer filmpatrone
JPS6196986A (ja) 1984-10-17 1986-05-15 Unitika Ltd アルコ−ルオキシダ−ゼ及びその製造方法
JPS61115488A (ja) 1984-11-09 1986-06-03 Ajinomoto Co Inc 耐熱性ポリフエノ−ルオキシダ−ゼの製造法
JPS6265039A (ja) 1985-09-18 1987-03-24 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料
JP2805813B2 (ja) 1988-08-09 1998-09-30 東ソー株式会社 スパッタリングターゲット及びその製造方法
JPH0316954A (ja) 1989-06-14 1991-01-24 Tosoh Corp 酸化物焼結体及びその製造法並びに用途
JPH0350148A (ja) 1989-07-19 1991-03-04 Tosoh Corp 酸化亜鉛焼結体及びその製造法並びに用途
US5236632A (en) * 1989-08-10 1993-08-17 Tosoh Corporation Zinc oxide sintered body, and preparation process and use thereof
JP3301755B2 (ja) 1990-08-22 2002-07-15 東ソー株式会社 スパッタリングターゲット及びその製法
JPH04219359A (ja) 1990-12-19 1992-08-10 Tosoh Corp 導電性酸化亜鉛焼結体
JP3128861B2 (ja) 1991-06-06 2001-01-29 東ソー株式会社 スパッタリングターゲット及びその製造方法
JP3343938B2 (ja) 1992-06-11 2002-11-11 東洋紡績株式会社 真空蒸着用材料
JPH1088332A (ja) * 1996-09-11 1998-04-07 Asahi Glass Co Ltd スパッタリングターゲットおよび透明導電膜とその製造方法
JPH10297962A (ja) * 1997-04-28 1998-11-10 Sumitomo Metal Mining Co Ltd スパッタリングターゲット用ＺｎＯ−Ｇａ２Ｏ３系焼結体およびその製造方法
US6596135B1 (en) 1998-03-05 2003-07-22 Asahi Glass Company, Limited Sputtering target, transparent conductive film, and method for producing the same
JP2000040429A (ja) 1998-07-24 2000-02-08 Sumitomo Metal Mining Co Ltd 酸化亜鉛系透明導電膜の製造方法
JP4577924B2 (ja) 1999-06-29 2010-11-10 三井金属鉱業株式会社 酸化亜鉛を含有するスパッタリングターゲットの製造方法
TW570909B (en) * 2001-06-26 2004-01-11 Mitsui Mining & Smelting Co Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance
KR101514766B1 (ko) * 2001-07-17 2015-05-12 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟 및 투명 도전막
JP3826755B2 (ja) 2001-09-28 2006-09-27 株式会社村田製作所 ＺｎＯ膜及びその製造方法並びに発光素子
KR101002537B1 (ko) 2002-08-02 2010-12-17 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 소결체, 이들을 사용하여 제조한 도전막,유기 ｅｌ 소자, 및 이것에 사용하는 기판
DE10306925A1 (de) * 2003-02-19 2004-09-02 GfE Gesellschaft für Elektrometallurgie mbH PVD-Beschichtungsmaterial
DE10329338A1 (de) * 2003-06-30 2005-02-10 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Sinterkörper aus ZnO
FR2860790B1 (fr) * 2003-10-09 2006-07-28 Snecma Moteurs Cible destinee a etre evaporee sous faisceau d'electrons, son procede de fabrication, barriere thermique et revetement obtenus a partir d'une cible, et piece mecanique comportant un tel revetement
JP2005187919A (ja) 2003-12-26 2005-07-14 Mitsubishi Materials Corp ＭｇＯ蒸着材及びその製造方法
JP2005219982A (ja) 2004-02-06 2005-08-18 Mitsubishi Heavy Ind Ltd 透光性導電材料
JP2005264246A (ja) 2004-03-18 2005-09-29 Japan Fine Ceramics Center 蒸着材及びその製造方法
WO2007066490A1 (ja) * 2005-12-08 2007-06-14 Nippon Mining & Metals Co., Ltd. 酸化ガリウム－酸化亜鉛系スパッタリングターゲット、透明導電膜の形成方法及び透明導電膜
FR2896797B1 (fr) * 2006-02-01 2008-08-08 Saint Gobain Ct Recherches Mousse ceramique en carbure de silicium recristallise impregnee.
EP2471972B1 (en) * 2006-12-13 2014-01-29 Idemitsu Kosan Co., Ltd. Sputtering target
JP5018553B2 (ja) 2007-03-09 2012-09-05 三菱マテリアル株式会社 ＺｎＯ蒸着材及びその製造方法並びにそれにより形成されたＺｎＯ膜
JP4962356B2 (ja) 2007-03-09 2012-06-27 三菱マテリアル株式会社 ＺｎＯ蒸着材及びそれにより形成されたＺｎＯ膜
JP5082927B2 (ja) 2007-03-09 2012-11-28 三菱マテリアル株式会社 ＺｎＯ蒸着材の製造方法
JP5018552B2 (ja) 2007-03-09 2012-09-05 三菱マテリアル株式会社 ＺｎＯ蒸着材及びその製造方法並びにそれにより形成されたＺｎＯ膜
JP5082928B2 (ja) 2007-03-09 2012-11-28 三菱マテリアル株式会社 ＺｎＯ蒸着材及びその製造方法並びにそれにより形成されたＺｎＯ膜
JP4962355B2 (ja) 2007-03-14 2012-06-27 三菱マテリアル株式会社 ＺｎＯ蒸着材及びそれにより形成されたＺｎＯ膜

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH062130A (ja) 1992-06-15 1994-01-11 Mitsubishi Materials Corp 酸化亜鉛系スパッタリング用ターゲット
JPH11322332A (ja) * 1998-05-21 1999-11-24 Sumitomo Metal Mining Co Ltd ＺｎＯ系焼結体およびその製造方法
JP2004068054A (ja) * 2002-08-02 2004-03-04 Idemitsu Kosan Co Ltd スパッタリングターゲット及び焼結体それらを利用して製造した導電膜。
JP2008245303A (ja) 2003-01-31 2008-10-09 Matsushita Electric Ind Co Ltd 記録媒体、再生装置、プログラム、再生方法
JP2005330158A (ja) * 2004-05-20 2005-12-02 Ulvac Material Kk 複合酸化物焼結体の製造方法及びその焼結体からなるスパッタリングターゲット
JP2006200016A (ja) * 2005-01-21 2006-08-03 Tosoh Corp ＺｎＯ：Ａｌターゲットおよび薄膜並びに薄膜の製造方法
JP2007252759A (ja) 2006-03-24 2007-10-04 Shinko Chemical Co Ltd 点眼薬容器
JP2007252764A (ja) 2006-03-24 2007-10-04 Brother Ind Ltd ミシン
JP2007252762A (ja) 2006-03-24 2007-10-04 Sankyo Kk 遊技機
JP2007252761A (ja) 2006-03-24 2007-10-04 Maerchen World Kk コインストッカー
JP2007252760A (ja) 2006-03-24 2007-10-04 Shimadzu Corp Ｘ線断層撮影方法およびｘ線断層撮影装置
JP2007252766A (ja) 2006-03-24 2007-10-04 Achilles Corp 靴に取り付ける脚カバー
JP2007252763A (ja) 2006-03-24 2007-10-04 Gifu Univ 医用動画像による画像診断システム
JP2007252765A (ja) 2006-03-24 2007-10-04 Maerchen World Kk コインストッカー
JP2008255475A (ja) * 2007-03-09 2008-10-23 Mitsubishi Materials Corp ＺｎＯ蒸着材及びそれにより形成されたＺｎＯ膜
JP2008245299A (ja) 2008-04-15 2008-10-09 Ntt Docomo Inc 移動体通信システムおよびその無線基地局への信号量流入制御方法
JP2008245300A (ja) 2008-04-16 2008-10-09 Kyocera Corp 無線装置
JP2008245302A (ja) 2008-04-18 2008-10-09 Ntt Docomo Inc 送信端末及びデータ送信方法
JP2008245301A (ja) 2008-04-18 2008-10-09 Seiko Epson Corp 表示パネル、電子機器及び画像データ準備方法
JP2008245304A (ja) 2008-04-24 2008-10-09 Nikon Corp デジタルカメラの設定方法および情報処理装置
JP2008245306A (ja) 2008-04-28 2008-10-09 Sharp Corp 番組サービス提供システムおよびプログラム
JP2008245305A (ja) 2008-04-28 2008-10-09 Sharp Corp 番組サービス提供システムおよびプログラム

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2194158A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021029421A1 (ja) * 2019-08-15 2021-09-13 Ｊｆｅミネラル株式会社 酸化亜鉛焼結体作製用酸化亜鉛粉末および酸化亜鉛焼結体、ならびに、これらの製造方法
JP2022185054A (ja) * 2019-08-15 2022-12-13 Ｊｆｅミネラル株式会社 酸化亜鉛焼結体作製用酸化亜鉛粉末および酸化亜鉛焼結体、ならびに、これらの製造方法
JP7573807B2 (ja) 2019-08-15 2024-10-28 Koa株式会社 酸化亜鉛焼結体作製用酸化亜鉛粉末および酸化亜鉛焼結体、ならびに、これらの製造方法

Also Published As

Publication number Publication date
EP2194158B1 (en) 2015-03-25
US20120119166A1 (en) 2012-05-17
KR20100049656A (ko) 2010-05-12
KR101208380B1 (ko) 2012-12-05
EP2508497B1 (en) 2015-11-04
TW200925300A (en) 2009-06-16
CN101809186A (zh) 2010-08-18
KR20120104642A (ko) 2012-09-21
EP2508497A1 (en) 2012-10-10
CN101809186B (zh) 2012-05-30
US20100243966A1 (en) 2010-09-30
EP2194158A1 (en) 2010-06-09
US8231812B2 (en) 2012-07-31
US8409477B2 (en) 2013-04-02
KR101342721B1 (ko) 2013-12-18
EP2194158A4 (en) 2011-07-27
TWI431135B (zh) 2014-03-21

Similar Documents

Publication Publication Date Title
WO2008100691A3 (en) Vapor deposition methods for forming a metal- containing layer on a substrate
WO2005045394A3 (en) Silicone composition for biocompatible membrane
TW200720076A (en) Composite materials and methods of making the same
EP1498456A4 (en) ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
DE602005008955D1 (de) Herstellungsverfahren für poröse sintermaterialien
MY158451A (en) Ceramics composite
WO2007076146A3 (en) Compositions comprising novel copolymers and electronic devices made with such compositions
WO2009045879A3 (en) Electrocatalysts for fuel cells
WO2006097503A3 (en) Process for the preparation of porous sintered metal materials
WO2012044057A3 (ko) 바텀 애쉬를 이용한 세라믹 투수 블록 조성물과 이를 이용한 다공성 세라믹 투수 블록 및 그 제조방법
EP1905860A3 (en) Porous abradable coating and method for applying the same.
TW201129704A (en) Oxide vapor deposition material and transparent electroconductive membrane and solar cell
WO2009034038A3 (de) Keramikmaterial, verfahren zur herstellung desselben und elektrokeramisches bauelement umfassend das keramikmaterial
WO2008114653A1 (ja) 熱電変換モジュールの製造方法及び熱電変換モジュール
WO2009041694A1 (ja) ＺｎＯ蒸着材とその製造方法、およびＺｎＯ膜
WO2020127145A3 (de) Materialien für elektronische vorrichtungen
TW200745310A (en) Material for organic electroluminescent device, method for producing the same and organic electroluminescent device
WO2007002076A3 (en) Solid-state electrochemical nox sensors
WO2008108276A1 (ja) スピネル焼結体、その製造方法、透明基板と液晶プロジェクター
WO2007110295A3 (de) Matrix und schichtsystem mit unstöchiometrischen teilchen
TW200730646A (en) Sputtering target of gallium oxide-zinc oxide system, formation method of transparent conducting film, and transparent conducting film
MY156359A (en) Oxide evaporation material, vapor-deposited thin film, and solar cell
TW200631696A (en) Method of making porous structure
EP1768204A3 (de) Dichtungsanordnung für einen Brennstoffzellenstapel und Verfahren zu dessen Herstellung
TW200500327A (en) Volatile copper(I) complexes for deposition of copper films by atomic layer deposition

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880108823.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08834432

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20107006392

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1088/KOLNP/2010

Country of ref document: IN

Ref document number: 2008834432

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12733897

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE