WO2009070821A3 - Halbleiterlaser mit absorptionsschicht - Google Patents

Halbleiterlaser mit absorptionsschicht Download PDF

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Publication number
WO2009070821A3
WO2009070821A3 PCT/AT2008/000431 AT2008000431W WO2009070821A3 WO 2009070821 A3 WO2009070821 A3 WO 2009070821A3 AT 2008000431 W AT2008000431 W AT 2008000431W WO 2009070821 A3 WO2009070821 A3 WO 2009070821A3
Authority
WO
WIPO (PCT)
Prior art keywords
absorption layer
layers
active zone
waveguide
optionally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/AT2008/000431
Other languages
English (en)
French (fr)
Other versions
WO2009070821A2 (de
WO2009070821A4 (de
Inventor
Bernhard Basnar
Gottfried Strasser
Maximilian Austerer
Aaron Maxwell Andrews
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TU Wien
Original Assignee
TU Wien
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AT19792007A external-priority patent/AT505915B1/de
Priority claimed from AT19802007A external-priority patent/AT505916B1/de
Application filed by TU Wien filed Critical TU Wien
Priority to EP08857009A priority Critical patent/EP2229715A2/de
Publication of WO2009070821A2 publication Critical patent/WO2009070821A2/de
Publication of WO2009070821A3 publication Critical patent/WO2009070821A3/de
Publication of WO2009070821A4 publication Critical patent/WO2009070821A4/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

Die Erfindung betrifft einen Halbleiterlaser, der eine aktive Zone (1) aus gegebenenfalls dotierten Halbleiterschichten zur Erzeugung von elektromagnetischer Strahlung nach elektrischer Anregung, die in vier Raumrichtungen von Wellenleiterschichten (2a, 2b, 5a, 5b) umgeben ist, gegebenenfalls ein Substrat (3), und jeweils zumindest eine Stromzu- und -abführung (4) zur Anregung der Photonenbildung in den Halbleiterschichten, wobei manche Wellenleiterschichten (5a, 5b) gegebenenfalls Isolierschichten zwischen aktiver Zone (1) und Stromzuführung (4) bilden, umfasst und dadurch gekennzeichnet ist, dass zumindest ein Teil zumindest einer Wellenleiterschicht (2a, 2b, 5a, 5b) mit einer mit der elektromagnetischen Strahlung wechselwirkenden Absorptionsschicht (6) aus anorganischem und/oder organischem Material, das im Emissionswellenlängenbereich des Lasers nichthomogene Absorbanz zeigt und das vorzugsweise einen niedrigeren effektiven Brechungsindex als die aktive Zone (1) aufweist, in Kontakt steht oder aus diesem Material besteht.
PCT/AT2008/000431 2007-12-05 2008-12-05 Halbleiterlaser mit absorptionsschicht Ceased WO2009070821A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08857009A EP2229715A2 (de) 2007-12-05 2008-12-05 Halbleiterlaser mit absorptionsschicht

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
ATA1980/2007 2007-12-05
AT19792007A AT505915B1 (de) 2007-12-05 2007-12-05 Halbleiterlaser
ATA1979/2007 2007-12-05
AT19802007A AT505916B1 (de) 2007-12-05 2007-12-05 Halbleiterlaser

Publications (3)

Publication Number Publication Date
WO2009070821A2 WO2009070821A2 (de) 2009-06-11
WO2009070821A3 true WO2009070821A3 (de) 2009-08-06
WO2009070821A4 WO2009070821A4 (de) 2009-10-15

Family

ID=40490568

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AT2008/000431 Ceased WO2009070821A2 (de) 2007-12-05 2008-12-05 Halbleiterlaser mit absorptionsschicht

Country Status (2)

Country Link
EP (1) EP2229715A2 (de)
WO (1) WO2009070821A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11031753B1 (en) * 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2787246A1 (fr) * 1998-12-09 2000-06-16 Alpes Lasers Laser de type semi-conducteur
WO2001050553A2 (de) * 1999-12-30 2001-07-12 Osram Opto Semiconductors Gmbh Streifenlaserdiodenelement
EP1154532A2 (de) * 2000-05-08 2001-11-14 Lucent Technologies Inc. Selbstmodengekoppelter Quantumkaskaden-Laser [1989/18]
US6856631B1 (en) * 1998-09-30 2005-02-15 Ricoh Company, Ltd. Semiconductor device with saturable absorbing layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856631B1 (en) * 1998-09-30 2005-02-15 Ricoh Company, Ltd. Semiconductor device with saturable absorbing layer
FR2787246A1 (fr) * 1998-12-09 2000-06-16 Alpes Lasers Laser de type semi-conducteur
WO2001050553A2 (de) * 1999-12-30 2001-07-12 Osram Opto Semiconductors Gmbh Streifenlaserdiodenelement
EP1154532A2 (de) * 2000-05-08 2001-11-14 Lucent Technologies Inc. Selbstmodengekoppelter Quantumkaskaden-Laser [1989/18]

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
BASNAR B ET AL: "Reversible switching of quantum cascade laser-modes using a pH-responsive polymeric cladding as transducer", OPTICS EXPRESS 20080609 OPTICAL SOCIETY OF AMERICA US, vol. 16, no. 12, 9 June 2008 (2008-06-09), pages 8557 - 8569, XP002530794 *
BERNHARD BASNAR ET AL: "Reversible switching of QCL-modes using a pH-responsive polymeric cladding", LASERS AND ELECTRO-OPTICS, 2008. CLEO 2008. CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 4 May 2008 (2008-05-04), pages 1 - 2, XP031277670, ISBN: 978-1-55752-859-9 *
See also references of EP2229715A2 *
SONG SHANSHAN ET AL: "Mode tuning of quantum cascade lasers through optical processing of chalcogenide glass claddings", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 89, no. 4, 26 July 2006 (2006-07-26), pages 41115 - 041115, XP012088080, ISSN: 0003-6951 *
WALTHER CHRISTOPH ET AL: "Low frequency terahertz quantum cascade laser operating from 1.6to1.8THz", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 89, no. 23, 8 December 2006 (2006-12-08), pages 231121 - 231121, XP012087415, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
EP2229715A2 (de) 2010-09-22
WO2009070821A2 (de) 2009-06-11
WO2009070821A4 (de) 2009-10-15

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