WO2009074149A3 - Passivierung einer resonator-endfläche eines halbleiter-lasers mit einem halbleiter-übergitter - Google Patents

Passivierung einer resonator-endfläche eines halbleiter-lasers mit einem halbleiter-übergitter Download PDF

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Publication number
WO2009074149A3
WO2009074149A3 PCT/DE2008/002066 DE2008002066W WO2009074149A3 WO 2009074149 A3 WO2009074149 A3 WO 2009074149A3 DE 2008002066 W DE2008002066 W DE 2008002066W WO 2009074149 A3 WO2009074149 A3 WO 2009074149A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
face
resonator end
semiconductor laser
superlattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/002066
Other languages
English (en)
French (fr)
Other versions
WO2009074149A2 (de
Inventor
Karl Eberl
Nils Kirstaedter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumics GmbH
Original Assignee
Lumics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumics GmbH filed Critical Lumics GmbH
Priority to US12/747,222 priority Critical patent/US20100278206A1/en
Publication of WO2009074149A2 publication Critical patent/WO2009074149A2/de
Publication of WO2009074149A3 publication Critical patent/WO2009074149A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Der Halbleiter-Laser weist eine Resonator-Endfläche (15) und ein auf der Resonator-Endfläche (15) aufgebrachtes Halbleiter-Übergitter (16) auf. Das Halbleiter-Übergitter (16) wirkt als Passivierungsschicht für die Resonator-Endfläche (15) und weist eine Anzahl Schichten (16.1, 16.2, 16.3, 16.4) auf, deren Materialzusammensetzungen derart gewählt sind, dass im Wesentlichen keine Lichtabsorption bei der Emissionswellenlänge des Halbleiter-Lasers (13) stattfindet, das Schichtpaket einen Ladungsträgertransport aus der aktiven Schicht an die Oberfläche der äussersten Schicht (16.4) unterdrückt und gleichzeitig gute Gitteranpassung des Halbleiter-Übergitters (16) an den Halbleiter-Laser ermöglicht wird.
PCT/DE2008/002066 2007-12-11 2008-12-11 Passivierung einer resonator-endfläche eines halbleiter-lasers mit einem halbleiter-übergitter Ceased WO2009074149A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/747,222 US20100278206A1 (en) 2007-12-11 2008-12-11 Passivation of a resonator end face of a semiconductor laser with a semiconductor superlattice

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007059538.9 2007-12-11
DE102007059538A DE102007059538B4 (de) 2007-12-11 2007-12-11 Passivierung einer Resonator-Endfläche eines Halbleiter-Lasers mit einem Halbleiter-Übergitter

Publications (2)

Publication Number Publication Date
WO2009074149A2 WO2009074149A2 (de) 2009-06-18
WO2009074149A3 true WO2009074149A3 (de) 2009-09-11

Family

ID=40679811

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/002066 Ceased WO2009074149A2 (de) 2007-12-11 2008-12-11 Passivierung einer resonator-endfläche eines halbleiter-lasers mit einem halbleiter-übergitter

Country Status (3)

Country Link
US (1) US20100278206A1 (de)
DE (1) DE102007059538B4 (de)
WO (1) WO2009074149A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9933554B2 (en) 2013-07-03 2018-04-03 California Institute Of Technology High-coherence semiconductor light sources
KR20160030196A (ko) 2013-07-03 2016-03-16 캘리포니아 인스티튜트 오브 테크놀로지 높은-코히어런스 반도체 광원들

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61228692A (ja) * 1985-04-02 1986-10-11 Nec Corp 半導体レ−ザ
EP0477033A2 (de) * 1990-09-21 1992-03-25 Sharp Kabushiki Kaisha Halbleiterlaser
JPH04212938A (ja) * 1990-12-06 1992-08-04 Pioneer Electron Corp 波長変換素子
JPH0621562A (ja) * 1991-02-07 1994-01-28 Nec Corp 半導体レーザ
GB2385462A (en) * 2002-02-15 2003-08-20 Denselight Semiconductors Pte A semiconductor laser structure
DE102004037191A1 (de) * 2004-07-30 2006-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbautelement mit einer Passivierungsschicht und Verfahren zu seiner Herstellung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656638A (en) * 1983-02-14 1987-04-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
US5802091A (en) * 1996-11-27 1998-09-01 Lucent Technologies Inc. Tantalum-aluminum oxide coatings for semiconductor devices
JP3814432B2 (ja) * 1998-12-04 2006-08-30 三菱化学株式会社 化合物半導体発光素子
JP2001119096A (ja) * 1999-10-18 2001-04-27 Fuji Photo Film Co Ltd 半導体レーザー装置
DE10048475C2 (de) * 2000-09-29 2003-04-17 Lumics Gmbh Passivierung der Resonatorendflächen von Halbleiterlasern auf der Basis von III-V-Halbleitermaterial
US6984538B2 (en) * 2001-07-26 2006-01-10 Phosistor Technologies, Inc. Method for quantum well intermixing using pre-annealing enhanced defects diffusion

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61228692A (ja) * 1985-04-02 1986-10-11 Nec Corp 半導体レ−ザ
EP0477033A2 (de) * 1990-09-21 1992-03-25 Sharp Kabushiki Kaisha Halbleiterlaser
JPH04212938A (ja) * 1990-12-06 1992-08-04 Pioneer Electron Corp 波長変換素子
JPH0621562A (ja) * 1991-02-07 1994-01-28 Nec Corp 半導体レーザ
GB2385462A (en) * 2002-02-15 2003-08-20 Denselight Semiconductors Pte A semiconductor laser structure
DE102004037191A1 (de) * 2004-07-30 2006-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbautelement mit einer Passivierungsschicht und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
DE102007059538B4 (de) 2009-08-20
DE102007059538A1 (de) 2009-06-18
US20100278206A1 (en) 2010-11-04
WO2009074149A2 (de) 2009-06-18

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