WO2009089499A3 - Système à faisceaux multiples - Google Patents

Système à faisceaux multiples Download PDF

Info

Publication number
WO2009089499A3
WO2009089499A3 PCT/US2009/030671 US2009030671W WO2009089499A3 WO 2009089499 A3 WO2009089499 A3 WO 2009089499A3 US 2009030671 W US2009030671 W US 2009030671W WO 2009089499 A3 WO2009089499 A3 WO 2009089499A3
Authority
WO
WIPO (PCT)
Prior art keywords
sample
multibeam system
beam column
produces
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/030671
Other languages
English (en)
Other versions
WO2009089499A2 (fr
WO2009089499A4 (fr
Inventor
Mark W. Utlaut
Noel Smith
Paul P. Tesch
Tom Miller
David H. Narum
Craig Henry
Liang Hong
Stacey Stone
David Tuggle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Priority to US12/812,221 priority Critical patent/US20110163068A1/en
Publication of WO2009089499A2 publication Critical patent/WO2009089499A2/fr
Publication of WO2009089499A3 publication Critical patent/WO2009089499A3/fr
Publication of WO2009089499A4 publication Critical patent/WO2009089499A4/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2049—Ion beam lithography processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Système à faisceaux multiples dans lequel un faisceau de particules chargé et un ou plusieurs faisceaux supplémentaires peuvent être dirigés sur la cible dans une chambre à vide unique. Une première colonne de faisceau produit de préférence un faisceau pour traitement rapide, et une deuxième colonne de faisceau produit un faisceau pour traitement plus précis. Une troisième colonne de faisceau peut être utilisée pour produire un faisceau utile pour la formation d'une image de l'échantillon tout en produisant peu ou pas de modification dans l'échantillon.
PCT/US2009/030671 2008-01-09 2009-01-09 Système à faisceaux multiples Ceased WO2009089499A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/812,221 US20110163068A1 (en) 2008-01-09 2009-01-09 Multibeam System

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2010208P 2008-01-09 2008-01-09
US61/020,102 2008-01-09

Publications (3)

Publication Number Publication Date
WO2009089499A2 WO2009089499A2 (fr) 2009-07-16
WO2009089499A3 true WO2009089499A3 (fr) 2009-10-08
WO2009089499A4 WO2009089499A4 (fr) 2009-12-03

Family

ID=40853782

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/030671 Ceased WO2009089499A2 (fr) 2008-01-09 2009-01-09 Système à faisceaux multiples

Country Status (2)

Country Link
US (1) US20110163068A1 (fr)
WO (1) WO2009089499A2 (fr)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1501115B1 (fr) 2003-07-14 2009-07-01 FEI Company Système à deux faisceaux
CN102149509B (zh) * 2008-07-09 2014-08-20 Fei公司 用于激光加工的方法和设备
US8168961B2 (en) 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining
EP2233907A1 (fr) * 2009-03-27 2010-09-29 FEI Company Formation d'une image pendant le fraisage d'une pièce de travail
JP5702552B2 (ja) 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
US8524139B2 (en) * 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
US8253118B2 (en) 2009-10-14 2012-08-28 Fei Company Charged particle beam system having multiple user-selectable operating modes
EP2341525B1 (fr) 2009-12-30 2013-10-23 FEI Company Source de plasma pour système de faisceau à particules chargées
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
CN102812533B (zh) * 2010-04-07 2015-12-02 Fei公司 组合激光器和带电粒子束系统
DE102010024625A1 (de) * 2010-06-22 2011-12-22 Carl Zeiss Nts Gmbh Verfahren zum Bearbeiten eines Objekts
US10112257B1 (en) * 2010-07-09 2018-10-30 General Lasertronics Corporation Coating ablating apparatus with coating removal detection
US8211717B1 (en) 2011-01-26 2012-07-03 International Business Machines Corporation SEM repair for sub-optimal features
EP2492950B1 (fr) 2011-02-25 2018-04-11 FEI Company Procédé de commutation rapide entre un mode à courant élevé et un mode à faible courant dans un système à faisceau de particules chargées
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
JP2013101929A (ja) 2011-11-07 2013-05-23 Fei Co 荷電粒子ビーム・システムの絞り
DE102012202519A1 (de) * 2012-02-17 2013-08-22 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtungen zur Präparation mikroskopischer Proben mit Hilfe von gepulstem Licht
US9895771B2 (en) 2012-02-28 2018-02-20 General Lasertronics Corporation Laser ablation for the environmentally beneficial removal of surface coatings
US9216475B2 (en) 2012-03-31 2015-12-22 Fei Company System for protecting light optical components during laser ablation
US9733164B2 (en) 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
US8759764B2 (en) 2012-06-29 2014-06-24 Fei Company On-axis detector for charged particle beam system
US8766213B2 (en) 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam
US9655223B2 (en) * 2012-09-14 2017-05-16 Oregon Physics, Llc RF system, magnetic filter, and high voltage isolation for an inductively coupled plasma ion source
US8884247B2 (en) 2012-09-25 2014-11-11 Fei Company System and method for ex situ analysis of a substrate
US9991090B2 (en) 2012-11-15 2018-06-05 Fei Company Dual laser beam system used with an electron microscope and FIB
EP2924710A1 (fr) * 2014-03-25 2015-09-30 Fei Company Imagerie d'un échantillon à l'aide de faisceaux multiples et un seul détecteur
US20160032281A1 (en) * 2014-07-31 2016-02-04 Fei Company Functionalized grids for locating and imaging biological specimens and methods of using the same
KR102257901B1 (ko) * 2014-09-19 2021-05-31 삼성전자주식회사 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법
JP6967340B2 (ja) 2016-09-13 2021-11-17 株式会社日立ハイテクサイエンス 複合ビーム装置
JP2018152183A (ja) * 2017-03-10 2018-09-27 株式会社日立製作所 微細構造体の製造方法および製造装置
US10361064B1 (en) * 2018-02-28 2019-07-23 National Electrostatics Corp. Beam combiner
CN108511309A (zh) * 2018-05-28 2018-09-07 河南太粒科技有限公司 一种激光离子源装置
KR102374612B1 (ko) * 2019-08-22 2022-03-15 삼성디스플레이 주식회사 레이저 장치 및 레이저 가공 방법
JP7280983B2 (ja) * 2020-01-29 2023-05-24 株式会社日立ハイテク イオンミリング装置
JP7493047B2 (ja) * 2020-09-18 2024-05-30 株式会社日立ハイテク 検査システム
KR20220162896A (ko) * 2021-06-01 2022-12-09 삼성디스플레이 주식회사 레이저 가공 장치 및 레이저 가공 방법
US20230286082A1 (en) * 2022-03-11 2023-09-14 Ats Industrial Automation Inc. Laser cleaning of oxidized parts
KR102803824B1 (ko) * 2023-01-31 2025-05-08 (주)라드피온 이온주입을 이용한 소재표면 개질장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260129A (ja) * 1993-03-02 1994-09-16 Seiko Instr Inc 集束イオンビーム装置
JPH06318443A (ja) * 1994-03-31 1994-11-15 Hitachi Ltd イオンビーム装置
JPH09205079A (ja) * 1996-01-26 1997-08-05 Hitachi Ltd 荷電ビーム処理によるパターン形成方法及び荷電ビーム処理装置
JPH09257670A (ja) * 1996-03-19 1997-10-03 Hitachi Ltd 電子顕微鏡用試料作製装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3571642A (en) * 1968-01-17 1971-03-23 Ca Atomic Energy Ltd Method and apparatus for interleaved charged particle acceleration
BE760067A (fr) * 1969-12-09 1971-06-09 Applied Display Services Procede et appareil pour la fabrication de plaques en relief ainsi que plaques pour impression ainsi obtenues
US4179312A (en) * 1977-12-08 1979-12-18 International Business Machines Corporation Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
FR2575597B1 (fr) * 1984-12-28 1987-03-20 Onera (Off Nat Aerospatiale) Appareil pour la micro-analyse ionique a tres haute resolution d'un echantillon solide
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
US5221422A (en) * 1988-06-06 1993-06-22 Digital Equipment Corporation Lithographic technique using laser scanning for fabrication of electronic components and the like
US5196706A (en) * 1991-07-30 1993-03-23 International Business Machines Corporation Extractor and deceleration lens for ion beam deposition apparatus
EP0731490A3 (fr) * 1995-03-02 1998-03-11 Ebara Corporation Procédé de microfabrication ultra-fine utilisant un faisceau d'énergie
US5874011A (en) * 1996-08-01 1999-02-23 Revise, Inc. Laser-induced etching of multilayer materials
US6162651A (en) * 1998-09-15 2000-12-19 Advanced Micro Devices, Inc. Method and system for accurately marking the backside of the die for fault location isolation
US6252227B1 (en) * 1998-10-19 2001-06-26 Taiwan Semiconductor Manufacturing Company Method for sectioning a semiconductor wafer with FIB for viewing with SEM
US6727500B1 (en) * 2000-02-25 2004-04-27 Fei Company System for imaging a cross-section of a substrate
US6346352B1 (en) * 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
US6768120B2 (en) * 2001-08-31 2004-07-27 The Regents Of The University Of California Focused electron and ion beam systems
JP3683851B2 (ja) * 2001-11-29 2005-08-17 哲也 牧村 光パターニングにより無機透明材料を加工する光加工装置及び光加工方法
EP1388883B1 (fr) * 2002-08-07 2013-06-05 Fei Company Colonne coaxiale FIB-SEM
US7504182B2 (en) * 2002-09-18 2009-03-17 Fei Company Photolithography mask repair
JP3887356B2 (ja) * 2003-07-08 2007-02-28 エスアイアイ・ナノテクノロジー株式会社 薄片試料作製方法
EP1501115B1 (fr) * 2003-07-14 2009-07-01 FEI Company Système à deux faisceaux
US7241361B2 (en) * 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7332729B1 (en) * 2004-06-18 2008-02-19 Novelx, Inc. System and method for multiple electron, ion, and photon beam alignment
ATE532203T1 (de) * 2004-08-27 2011-11-15 Fei Co Lokalisierte plasmabehandlung
JP5033314B2 (ja) * 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
US7893384B2 (en) * 2004-12-07 2011-02-22 Chosen Technologies, Inc. Systems and methods for laser material manipulation
JP4878135B2 (ja) * 2005-08-31 2012-02-15 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置及び試料加工方法
JP5099291B2 (ja) * 2006-02-14 2012-12-19 エスアイアイ・ナノテクノロジー株式会社 集束イオンビーム装置及び試料の断面加工・観察方法
JP5371142B2 (ja) * 2006-07-14 2013-12-18 エフ・イ−・アイ・カンパニー マルチソース型のプラズマ集束イオン・ビーム・システム
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260129A (ja) * 1993-03-02 1994-09-16 Seiko Instr Inc 集束イオンビーム装置
JPH06318443A (ja) * 1994-03-31 1994-11-15 Hitachi Ltd イオンビーム装置
JPH09205079A (ja) * 1996-01-26 1997-08-05 Hitachi Ltd 荷電ビーム処理によるパターン形成方法及び荷電ビーム処理装置
JPH09257670A (ja) * 1996-03-19 1997-10-03 Hitachi Ltd 電子顕微鏡用試料作製装置

Also Published As

Publication number Publication date
US20110163068A1 (en) 2011-07-07
WO2009089499A2 (fr) 2009-07-16
WO2009089499A4 (fr) 2009-12-03

Similar Documents

Publication Publication Date Title
WO2009089499A3 (fr) Système à faisceaux multiples
WO2009117624A3 (fr) Système de traitement chimique activé par un faisceau neutre monoénergétique et son procédé d’utilisation
WO2019166331A3 (fr) Procédé et système de faisceaux de particules chargées
WO2008087652A3 (fr) Cartographie de profondeur à l'aide d'un éclairage à faisceaux multiples
WO2010006067A3 (fr) Procédé et appareil d'usinage laser
WO2009020150A1 (fr) Appareil composite à faisceau ionique focalisé, et procédé de surveillance d'usinage et procédé d'usinage utilisant un appareil composite à faisceau ionique focalisé
WO2012141878A3 (fr) Spectromètre de masse à séparation de mobilité d'ions/stockage d'ions à rapport cyclique élevé
WO2009077450A3 (fr) Balayage de faisceaux de particules chargées
WO2010120569A3 (fr) Sources de plasma icp et ecr conjuguées permettant un contrôle et une génération de faisceaux d'ions en bande large
WO2010030575A3 (fr) Mise en forme adaptative de faisceau optique dans des systèmes de traitement au laser
WO2009145798A3 (fr) Procédés de modification de caractéristiques d’une pièce de travail à l’aide un faisceau ionique d'amas gazeux
WO2008102062A3 (fr) Agencement
EP2256779A3 (fr) Système à deux faisceaux
WO2012064773A8 (fr) Centrale électrique à fusion à confinement inertiel dissociant un composant à durée de vie limitée de la disponibilité de la centrale
WO2007143204A3 (fr) Compositions et procédés pour modifier des glycans de surface cellulaire
IL212338A (en) A biomass processing method that involves biomass irradiation with electron beam radiation
WO2010059249A3 (fr) Sources de rayonnement compactes intercalées
WO2008112804A3 (fr) Système et procédé pour traiter des images vidéo pour une recréation par caméra
WO2010036368A3 (fr) Procédé et dispositif d'exploration sismique
WO2009006577A3 (fr) Compositions et méthodes pour inhiber la protéine ezh2
GB2466172A (en) Microphone array processor based on spatial analysis
WO2013176927A3 (fr) Système de commande de réseau laser cohérent et procédé associé
WO2012170499A3 (fr) Fabrication de nanopores et leurs applications
WO2013003371A3 (fr) Appareil et procédés avec colonnes multiples à faisceaux d'électrons
WO2010085775A3 (fr) Système, procédé et support accessible par ordinateur permettant de fournir une microscopie de super-résolution à large champ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09701052

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09701052

Country of ref document: EP

Kind code of ref document: A2