WO2009106583A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2009106583A1
WO2009106583A1 PCT/EP2009/052311 EP2009052311W WO2009106583A1 WO 2009106583 A1 WO2009106583 A1 WO 2009106583A1 EP 2009052311 W EP2009052311 W EP 2009052311W WO 2009106583 A1 WO2009106583 A1 WO 2009106583A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron transport
transport layer
substrate
inorganic semiconductor
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/052311
Other languages
English (en)
Inventor
Patrick James Mcnally
Stephen Michael Daniels
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dublin City University
Original Assignee
Dublin City University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dublin City University filed Critical Dublin City University
Publication of WO2009106583A1 publication Critical patent/WO2009106583A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions

Definitions

  • the present invention relates to electroluminescent emitters, and particularly to electroluminescent emitters for generation of ultra-violet, blue/ultra-violet and white light.
  • an electroluminescent device comprising: a transparent substrate, formed from a mouldable material; and a transparent electron transport layer on the substrate; and at least one inorganic semiconducting light-emitting component in contact with the electron transport layer.
  • the inorganic semiconductor component may comprise a copper halide, or an equivalent wide-bandgap semiconducting UV or blue/UV light-emitting material, such as gallium nitride or zinc oxide.
  • the light emitted by the device is in the range of about 300nm to about 450nm.
  • the inorganic semiconductor component comprises a copper halide.
  • Copper halides are direct bandgap semiconductors and are therefore capable of efficient light emission. Copper halide based light emission provides a more efficient light emitting process than competing materials (even those which are lattice- matched and compatible with Si semiconductor substrates).
  • the device is based on a transparent substrate formed from a mouldable material (such as glass or polymer) it is possible to produce an electroluminescent device having almost any shape. This is not possible with devices based on silicon substrates. This means that almost any object could be coated with the required layers to produce an electroluminescent device.
  • the inorganic semiconducting component comprises a copper halide selected from the group comprising: copper chloride (CuCl), copper bromide (CuBr), copper fluoride (CuF), copper iodide (CuI), copper astatide (CuAt) and alloys of copper halides.
  • a copper halide selected from the group comprising: copper chloride (CuCl), copper bromide (CuBr), copper fluoride (CuF), copper iodide (CuI), copper astatide (CuAt) and alloys of copper halides.
  • the copper halide is doped, which represents the naturally occurring copper halide conductivity.
  • the inorganic semiconductor is arranged in a layer or film on the electron transport layer.
  • discrete particles of the inorganic semiconductor are embedded in the electron transport layer.
  • the particles are nanoparticles, that is, microscopic particles with at least one dimension less than 100 nm.
  • the nanoparticles have a diameter between about lnm and about lOOnm.
  • the effective bandgap of the semiconductor increases.
  • the electron transport layer may comprise a transparent electron-transporting polymer.
  • the polymer is an n-type semiconducting polymer.
  • the electron transport layer comprises 1,4,5,8-naphthalene- tetracarboxylic dianhydride (NTCDA).
  • NTCDA 1,4,5,8-naphthalene- tetracarboxylic dianhydride
  • the electron transport layer comprises poly (phenyl(90%) - methyl(10%) - silsesquioxane) (PPMSQ).
  • the substrate is formed from a transparent mouldable material.
  • the substrate may be moulded or formed into any desired shape during or prior to the fabrication process.
  • the substrate may comprise glass or a transparent polymeric material.
  • the substrate may be coated with indium tin oxide (ITO).
  • ITO may be doped with tin dioxide (SnO 2 ). As ITO is transparent, it allows the light produced by the device to be emitted through the substrate.
  • the emitter may further comprise a phosphor layer between the substrate and the electron transport layer.
  • phosphor particles may be embedded in the electron transport layer.
  • a method for manufacturing an electroluminescent device comprising the steps of: forming a transparent substrate from a mouldable material; depositing a transparent electron transport layer on the substrate; and providing at least one inorganic semiconducting light emitting component in contact with the electron transport layer.
  • the inorganic semiconductor component may comprise a copper halide, or an equivalent wide-bandgap semiconducting UV or blue/UV light-emitting material, such as gallium nitride or zinc oxide.
  • the light emitted by the device is in the range 300-450nm.
  • the method may further comprise the step of heat-treating the electron transport layer (after it is deposited on the substrate) to produce a nanocrystalline film, wherein the maximum temperature of the heat treatment step is approximately 200°C.
  • the maximum temperature of the heat-treatment step is 200°C, the disadvantages associated with prior art high temperature processes are avoided.
  • the quantum-confined nanoparticles are generally precipitated from a glass matrix upon heat treatment at high temperatures, e.g. 550°C for between 10 minutes and 100 hours.
  • high temperatures e.g. 550°C for between 10 minutes and 100 hours.
  • development of copper halide based nanophotonic emission devices has, heretofore, not been possible.
  • the step of providing the at least one inorganic semiconducting light-emitting component may comprise depositing a film of the semiconductor on the electron transport layer.
  • the step of depositing the electron transport layer and providing the at least one inorganic semiconducting light-emitting component may comprise mixing nanoparticles of the semiconductor with an electron transport solution and depositing the resultant mixture in a film on the substrate.
  • the step of depositing the mixture may comprise spin-coating the mixture onto the substrate.
  • the method may further comprise the steps of coating the substrate with a transparent conducting material, such as indium tin oxide.
  • the method may also comprise the step of providing a phosphor portion.
  • the step of providing the phosphor portion may comprise depositing a phosphor layer or film on the substrate.
  • the step of providing the phosphor portion may comprise mixing phosphor particles with the electron transport solution and depositing the resultant mixture on the substrate.
  • the method may further comprise the steps of capping the device with an insulating capping layer and/or providing a metal contact layer.
  • Figure 1 is a cross-sectional view of a white-light emitting device according to a first embodiment of the present invention
  • Figure 2 is a cross-sectional view of a white-light emitting device according to a second embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of a white-light emitting device according to a third embodiment of the present invention. Detailed description of the drawings
  • Figure 1 shows a white-light emitter 1 according to the present invention.
  • the device comprises a glass substrate 6 coated with a thin film 5 of indium tin oxide.
  • the device further comprises a polymeric NCTDA electron transport layer 4 and a p-CuCl active layer 3 deposited on the electron transport layer 4.
  • a metal contact 22 is provided on the upper surface of the device.
  • the metal contact is a high work- function charge-injecting metal such as gold.
  • a glass slide 6 coated with SnCVdoped indium tin oxide (ITO) 5 is used as the substrate.
  • a spin-coated 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA) film 4 is deposited upon the ITO/glass composite.
  • the film is deposited from a saturated precursor solution of NTCDA in dimethylformaldehyde (DMF), which concentration can be adjusted, and heat treated at ⁇ 200°C in order to produce nanocrystalline films of n-type NTCDA.
  • DMF dimethylformaldehyde
  • This anneal temperature of ⁇ 200°C represents the highest process temperature that will be used, and all onward CuCl process stages occur at T ⁇ 200°C.
  • Nanocrystalline NTCDA films are known to be good electron transporting films and the combined ITO/NTCDA electrode serves as the electron-injecting cathode of the device.
  • the p-type CuCl film 3 is deposited using either physical vapour deposition or rf sputtering.
  • CuCl in its native form is p-type due to the presence of Cu vacancies.
  • An oxygen- based plasma treatment may be applied to the CuCl to enhance this conductivity, if required.
  • the naturally deposited p-type or plasma enhanced p-CuCl is capped with a thin ( ⁇ 200 nm) Au anode 2.
  • a high work function charge-injecting contact such as gold, avoids the air sensitivity resulting from the use of a lower work function metallic contact, and also protects the CuCl from exposure to air.
  • a phosphor layer 7 is deposited (by physical vapour deposition or rf sputtering) as shown in Figure 1 to down-convert the -365 nm emitted UV light to white light. IfUV output is required, this layer may be omitted.
  • the overall structure can be driven by DC and AC voltages, as shown in Figure 1.
  • the device comprises a glass substrate 26 coated with a thin film 25 of indium tin oxide.
  • the device further comprises a polymeric NCTDA electron transport layer 24 with embedded nanoparticles 23 of p- CuCl.
  • a metal contact 22 is provided on the upper surface of the device.
  • ITO 25 is used as the substrate.
  • Non-planar substrates can also be easily spin-coated with SnO 2 -doped ITO.
  • P-type CuCl nanoparticles 23 are produced via the environmentally friendly process outlined in "A green hydrothermal route to Nanocrystalline CuCl", Y.C. Zhang, J.Y. Tang.
  • a green hydrothermal route to Nanocrystalline CuCl Y.C. Zhang, J.Y. Tang.
  • CuCl 2 .2H2O and equimolar alpha-D-glucose powders and distilled water are placed in a simple autoclave. This is sealed and maintained at 120 0 C for 24 h in an electric oven, then air cooled to room temperature. The resulting precipitate is filtered and washed with distilled water and ethanol. During the filtration, the top surface of the product is always covered with liquids to prevent its exposure to air.
  • a non-polar organic solvent that is heavier than water such as dichloromethane or chloroform
  • dichloromethane or chloroform is poured over the solution in order to cover the precipitate and isoltate it from the water-based solution.
  • the upper water-based solution is poured off and the remaining product is then dried under nitrogen gas to produce monodispere CuCl nanoparticles.
  • DMF dimethylformaldehyde
  • the copper halide particles may be produced by physical (ball) milling of copper halide powders.
  • Appropriate heat treatment i.e. ⁇ 200 0 C
  • a cured polymeric electron transport layer 24 in which are embedded the p-CuCl nanoparticles 23.
  • the structure is sealed with a thin ( ⁇ 200 nm) gold anode 22.
  • a phosphor layer 27 is deposited (by physical vapour deposition or rf sputtering) to down-convert the -365 nm emitted UV light to white light.
  • the overall structure is driven by DC and AC voltages, as shown in Figure 2.
  • the device comprises a glass substrate 36 coated with a thin film 35 of indium tin oxide.
  • the device further comprises a polymeric NCTDA electron transport layer 34 with embedded nanoparticles 33 of p- CuCl and embedded phosphor particles 37.
  • An insulating capping layer 38 and a metal contact 32 are provided on the upper surface of the device.
  • the phosphor particles 37 down-convert the -365 nm emitted UV light to white light.
  • the inorganic semiconducting component e.g. the copper halide or other similar material.
  • the electron-hole pair recombines via an excitonic-mediated process to produce UV light emission.
  • the UV light is either emitted through the transparent substrate, or is down-converted by the (optional) phosphor layer (or particles) to white light.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)

Abstract

La présente invention porte sur un dispositif électroluminescent (1). Le dispositif comprend un substrat transparent (6) formé à partir d'un matériau apte à être moulé. Le dispositif comprend également une couche de transport d'électrons transparente (4) recouvrant le substrat et au moins un composant semi-conducteur inorganique émettant de la lumière (3) en contact avec la couche de transport d'électrons. Le semi-conducteur peut être un halogénure de cuivre ou un matériau équivalent semi-conducteur à large bande interdite émettant de la lumière ultraviolette ou bleue/ultraviolette. L'invention porte également sur un procédé de fabrication d'un dispositif électroluminescent (1).
PCT/EP2009/052311 2008-02-29 2009-02-26 Dispositif électroluminescent Ceased WO2009106583A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0803753.3 2008-02-29
GB0803753A GB2458443A (en) 2008-02-29 2008-02-29 Electroluminescent device

Publications (1)

Publication Number Publication Date
WO2009106583A1 true WO2009106583A1 (fr) 2009-09-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/052311 Ceased WO2009106583A1 (fr) 2008-02-29 2009-02-26 Dispositif électroluminescent

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GB (1) GB2458443A (fr)
WO (1) WO2009106583A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011062409A1 (fr) * 2009-11-18 2011-05-26 University Of Seoul Industry Cooperation Foundation Dispositifs électroluminescents à semi-conducteur composé de mélange i-vii et de cuivre
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8367925B2 (en) 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8368047B2 (en) 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
US8373153B2 (en) 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors
US8395141B2 (en) 2009-07-06 2013-03-12 University Of Seoul Industry Cooperation Foundation Compound semiconductors
KR101369155B1 (ko) 2012-06-29 2014-03-06 인텔렉추얼디스커버리 주식회사 반도체 발광 디바이스
US8748862B2 (en) 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US9397249B2 (en) 2009-07-06 2016-07-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
WO2019146920A1 (fr) * 2018-01-29 2019-08-01 주식회사 페타룩스 Procédé de fabrication de dispositif électronique

Citations (3)

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EP1347518A2 (fr) * 1995-11-28 2003-09-24 International Business Machines Corporation Alliages organiques/non-organiques utilisés pour améliorer des dispositifs électroluminescents organiques
US20060194075A1 (en) * 2005-02-25 2006-08-31 Seiko Epson Corporation Light emitting element, light emitting device, and electronic apparatus
WO2006098540A1 (fr) * 2005-03-17 2006-09-21 Samsung Electronics Co., Ltd Diode electroluminescente a points quantiques comprenant une couche de transport d'electrons inorganique

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WO2003021694A2 (fr) * 2001-09-04 2003-03-13 Koninklijke Philips Electronics N.V. Dispositif electroluminescent comportant de points quantiques
JP3651801B2 (ja) * 2003-06-30 2005-05-25 九州電力株式会社 電界発光素子
EP1864341B1 (fr) * 2005-02-16 2019-11-13 Massachusetts Institute Of Technology Dispositif électroluminescent à nanocristaux semi-conducteurs

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EP1347518A2 (fr) * 1995-11-28 2003-09-24 International Business Machines Corporation Alliages organiques/non-organiques utilisés pour améliorer des dispositifs électroluminescents organiques
US20060194075A1 (en) * 2005-02-25 2006-08-31 Seiko Epson Corporation Light emitting element, light emitting device, and electronic apparatus
WO2006098540A1 (fr) * 2005-03-17 2006-09-21 Samsung Electronics Co., Ltd Diode electroluminescente a points quantiques comprenant une couche de transport d'electrons inorganique

Non-Patent Citations (2)

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A. MITRA ET.AL.: "Towards the fabrication of a UV light source based on CuCl thin films", J. MATER. SCI.: MATER. ELECTRON, vol. 18, 2007, pages S21 - S23, XP002530655 *
L. O'REILLY ET. AL.: "The use of wide-bandgap CuCl on silicon for ultra-violet photonics", PROC. OF SPIE, vol. 5825, 2005, pages 29 - 36, XP002530656 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8373153B2 (en) 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors
US8367925B2 (en) 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
US8395141B2 (en) 2009-07-06 2013-03-12 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US9397249B2 (en) 2009-07-06 2016-07-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8748862B2 (en) 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8368047B2 (en) 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
KR101259328B1 (ko) 2009-11-18 2013-05-06 서울시립대학교 산학협력단 구리 블렌드 ⅰ- ⅶ 화합물 반도체 발광 디바이스
US8524517B2 (en) 2009-11-18 2013-09-03 University Of Seoul Industry Cooperation Foundation Copper blend I-VII compound semiconductor light-emitting devices
US8058641B2 (en) 2009-11-18 2011-11-15 University of Seoul Industry Corporation Foundation Copper blend I-VII compound semiconductor light-emitting devices
WO2011062409A1 (fr) * 2009-11-18 2011-05-26 University Of Seoul Industry Cooperation Foundation Dispositifs électroluminescents à semi-conducteur composé de mélange i-vii et de cuivre
KR101369155B1 (ko) 2012-06-29 2014-03-06 인텔렉추얼디스커버리 주식회사 반도체 발광 디바이스
WO2019146920A1 (fr) * 2018-01-29 2019-08-01 주식회사 페타룩스 Procédé de fabrication de dispositif électronique
US11355663B2 (en) 2018-01-29 2022-06-07 Petalux Inc. Method of manufacturing an electronic device

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Publication number Publication date
GB2458443A (en) 2009-09-23
GB0803753D0 (en) 2008-04-09

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