WO2009111473A2 - Procédé de traitement thermique d’une pellicule diélectrique poreuse à faible constante diélectrique - Google Patents

Procédé de traitement thermique d’une pellicule diélectrique poreuse à faible constante diélectrique Download PDF

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WO2009111473A2
WO2009111473A2 PCT/US2009/035878 US2009035878W WO2009111473A2 WO 2009111473 A2 WO2009111473 A2 WO 2009111473A2 US 2009035878 W US2009035878 W US 2009035878W WO 2009111473 A2 WO2009111473 A2 WO 2009111473A2
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dielectric film
low
radiation
exposure
approximately
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WO2009111473A3 (fr
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Junjun Liu
Dorel I. Toma
Eric M. Lee
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority claimed from US12/043,835 external-priority patent/US20090226694A1/en
Priority claimed from US12/043,772 external-priority patent/US7858533B2/en
Priority claimed from US12/043,814 external-priority patent/US7977256B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to DE112009000518T priority Critical patent/DE112009000518T5/de
Priority to CN2009801078443A priority patent/CN101960556B/zh
Priority to JP2010549819A priority patent/JP5490024B2/ja
Publication of WO2009111473A2 publication Critical patent/WO2009111473A2/fr
Publication of WO2009111473A3 publication Critical patent/WO2009111473A3/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Definitions

  • the invention relates to a method for treating a dielectric film and, more particularly, to a method of treating a low dielectric constant (low-k) dielectric film with electromagnetic (EM) radiation.
  • EM electromagnetic
  • interconnect delay is a major limiting factor in the drive to improve the speed and performance of integrated circuits (IC).
  • One way to minimize interconnect delay is to reduce interconnect capacitance by using low dielectric constant (low-k) materials as the insulating dielectric for metal wires in the IC devices.
  • low-k materials have been developed to replace relatively high dielectric constant insulating materials, such as silicon dioxide.
  • low-k films are being utilized for inter-level and intra-level dielectric layers between metal wires in semiconductor devices.
  • material films are formed with pores, i.e., porous low-k dielectric films.
  • Such low-k films can be deposited by a spin-on dielectric (SOD) method similar to the application of photo-resist, or by chemical vapor deposition (CVD).
  • SOD spin-on dielectric
  • CVD chemical vapor deposition
  • Low-k materials are less robust than more traditional silicon dioxide, and the mechanical strength deteriorates further with the introduction of porosity.
  • the porous low-k films can easily be damaged during plasma processing, thereby making desirable a mechanical strengthening process. It has been understood that enhancement of the material strength of porous low-k dielectrics is essential for their successful integration. Aimed at mechanical strengthening, alternative curing techniques are being explored to make porous low-k films more robust and suitable for integration.
  • the curing of a polymer includes a process whereby a thin film deposited for example using spin-on or vapor deposition (such as chemical vapor deposition CVD) techniques, is treated in order to cause cross-linking within the film.
  • free radical polymerization is understood to be the primary route for cross-linking.
  • mechanical properties such as for example the Young's modulus, the film hardness, the fracture toughness and the interfacial adhesion, are improved, thereby improving the fabrication robustness of the low-k film.
  • the objectives of post-deposition treatments may vary from film to film, including for example the removal of moisture, the removal of solvents, the burn-out of porogens used to form the pores in the porous dielectric film, the improvement of the mechanical properties for such films, and so on.
  • Low dielectric constant (low k) materials are conventionally thermally cured at a temperature in the range of 300 0 C to 400 0 C for CVD films.
  • furnace curing has been sufficient in producing strong, dense low-k films with a dielectric constant greater than approximately 2.5.
  • porous dielectric films such as ultra low-k films
  • thermal treatment or thermal curing
  • the invention relates to a method for treating a dielectric film and, more particularly, to a method of curing a low dielectric constant (low-k) dielectric film.
  • the invention further relates to a method of treating a low-k dielectric film with electromagnetic (EM) radiation.
  • EM electromagnetic
  • a method of curing a low dielectric constant (low-k) dielectric film on a substrate comprising exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.
  • IR infrared
  • UV ultraviolet
  • a method of curing a low dielectric constant (low-k) dielectric film on a substrate comprising: forming a low-k dielectric film on a substrate; exposing the low-k dielectric film to a first infrared (IR) radiation; exposing the low-k dielectric film to ultraviolet (UV) radiation following the exposure to the first IR radiation; and exposing PCT Docket No.: TDC-006 WO
  • a method of curing a low dielectric constant (low-k) film on a substrate comprising: forming a low-k dielectric film on a substrate, the low-k dielectric film comprising a structure- forming material and a pore-generating material; exposing the low-k dielectric film to infrared (IR) radiation for a first time duration; and during the first time duration, exposing the low-k dielectric film to ultraviolet (UV) radiation for a second time duration, wherein the second time duration is a fraction of the first time duration, and wherein the second time duration begins at a first time following the start of the first time duration and ends at a second time preceding the end of the first time duration.
  • IR infrared
  • a method of curing a low dielectric constant (low-k) dielectric film on a substrate comprising: forming a low-k dielectric film on a substrate, the low-k dielectric film comprising a structure-forming material and a pore-generating material; substantially removing the pore-generating material from the low-k dielectric film to form a porous low-k dielectric film; generating cross-linking initiators in the porous low-k dielectric film following the removing; and cross-linking the porous low-k dielectric film following the generation of the cross-linking initiators.
  • FIG. 1 is a flow chart of a method of treating a dielectric film according to an embodiment
  • FIG. 2 is a flow chart of a method of treating a dielectric film according to another embodiment
  • FIG. 3 is a flow chart of a method of treating a dielectric film according to another embodiment
  • FIG. 4 is a flow chart of a method of treating a dielectric film according to another embodiment
  • FIGs. 5A through 5C are schematic representations of a transfer system for a drying system and a curing system according to an embodiment
  • FIG. 6 is a schematic cross-sectional view of a drying system according to another embodiment.
  • FIG. 7 is a schematic cross-sectional view of a curing system according to another embodiment.
  • alternative curing methods are more efficient in energy transfer, as compared to thermal curing processes, and the higher energy levels found in the form of energetic particles, such as accelerated electrons, ions, or neutrals, or in the form of energetic photons, can easily excite electrons in a low-k dielectric film, thus efficiently breaking chemical bonds and dissociating side groups.
  • These alternative curing methods facilitate the generation of cross-linking initiators (free radicals) and can improve the energy transfer required in actual cross- linking. As a result, the degree of cross-linking can be increased at a reduced thermal budget.
  • EB, UV, IR and MW curing all have their own benefits, these techniques also have limitations.
  • High energy curing sources such as EB and UV can provide high energy levels to generate more than enough cross-linking initiators (free radicals) for cross-linking, which leads to much improved mechanical properties under complementary substrate heating.
  • electrons and UV photons can cause indiscriminate dissociation of chemical bonds, which may adversely degrade the desired physical and electrical properties of the film, such as loss of hydrophobicity, increased residual film stress, collapse of pore structure, film densification and increased dielectric constant.
  • a method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4.
  • the method comprises exposing the low-k dielectric film to non-ionizing, electromagnetic (EM) radiation, including ultraviolet (UV) radiation and infrared (IR) radiation.
  • EM electromagnetic
  • the UV exposure may comprise a plurality of UV exposures, wherein each UV exposure may or may not include a different intensity, power, power density, or wavelength range, or any combination of two or more thereof.
  • the IR exposure may comprise a plurality of IR exposures, wherein each IR exposure may or may not include a different intensity, power, power density, or wavelength range, or any combination of two or more thereof.
  • the low-k dielectric film may be heated by elevating the temperature of the substrate to a UV thermal temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the UV thermal temperature ranges from approximately 300 degrees C to approximately 500 degrees C.
  • the UV thermal temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
  • Substrate thermal heating may be performed by conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
  • the low-k dielectric film may be heated by elevating the temperature of the substrate to an IR thermal temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the IR thermal temperature ranges from approximately 300 degrees C to approximately 500 degrees C.
  • the IR thermal temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
  • Substrate thermal heating may be performed by conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
  • thermal heating may take place before UV exposure, during UV exposure, or after UV exposure, or any combination of two or more thereof. Additionally yet, thermal heating may take place before IR exposure, during IR exposure, or after IR exposure, or any combination of two or more thereof. Thermal heating may be performed by conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
  • IR exposure may take place before the UV exposure, during the UV exposure, or after the UV exposure, or any combination of two or more thereof.
  • UV exposure may take place before the IR exposure, during the IR exposure, or after the IR exposure, or any combination of two or more thereof.
  • the low-k dielectric film may be heated by elevating the temperature of the substrate to a pre-thermal treatment temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the pre-thermal treatment temperature ranges from approximately 300 degrees C to approximately 500 degrees C and, desirably, the pre-thermal treatment temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
  • the low-k dielectric film may be heated by elevating the temperature of the substrate to a post-thermal treatment temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the post-thermal treatment temperature ranges from approximately 300 degrees C to approximately 500 degrees C and, desirably, the post-thermal treatment PCT Docket No.: TDC-006 WO
  • temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
  • the substrate to be treated may be a semiconductor, a metallic conductor, or any other substrate to which the dielectric film is to be formed upon.
  • the dielectric film can have a dielectric constant value (before drying and/or curing, or after drying and/or curing, or both) less than the dielectric constant of SiO 2 , which is approximately 4 (e.g., the dielectric constant for thermal silicon dioxide can range from 3.8 to 3.9).
  • the dielectric film may have a dielectric constant (before drying and/or curing, or after drying and/or curing, or both) of less than 3.0, a dielectric constant of less than 2.5, a dielectric constant of less than 2.2, or a dielectric constant of less than 1.7.
  • the dielectric film may be described as a low dielectric constant (low-k) film or an ultra-low-k film.
  • the dielectric film may include at least one of an organic, inorganic, and inorganic-organic hybrid material. Additionally, the dielectric film may be porous or non-porous.
  • the dielectric film may, for instance, include a single phase or dual phase porous low-k film that includes a structure-forming material and a pore- generating material.
  • the structure-forming material may include an atom, a molecule, or fragment of a molecule that is derived from a structure-forming precursor.
  • the pore-generating material may include an atom, a molecule, or fragment of a molecule that is derived from a pore-generating precursor (e.g., porogen).
  • the single phase or dual phase porous low-k film may have a higher dielectric constant prior to removal of the pore-generating material than following the removal of the pore-generating material.
  • forming a single phase porous low-k film may include depositing a structure-forming molecule having a pore-generating molecular side group weakly bonded to the structure-forming molecule on a surface of a substrate.
  • forming a dual phase porous low-k film may include co-polymerizing a structure-forming molecule and a pore- generating molecule on a surface of a substrate.
  • the dielectric film may have moisture, water, solvent, and/or other contaminants which cause the dielectric constant to be higher prior to drying and/or curing than following drying and/or curing.
  • the dielectric film can be formed using chemical vapor deposition (CVD) techniques, or spin-on dielectric (SOD) techniques such as those offered in the Clean Track ACT 8 SOD and ACT 12 SOD coating systems commercially available from Tokyo Electron Limited (TEL).
  • the Clean Track ACT 8 (200 mm) and ACT 12 (300 mm) coating systems provide coat, bake, and cure tools for SOD materials.
  • the track system can be configured for processing substrate sizes of 100 mm, 200 mm, 300 mm, and greater.
  • Other systems and methods for forming a dielectric film on a substrate as known to those skilled in the art of both spin-on dielectric technology and CVD dielectric technology are suitable for the invention.
  • the dielectric film may include an inorganic, silicate-based material, such as oxidized organosilane (or organo siloxane), deposited using CVD techniques.
  • oxidized organosilane or organo siloxane
  • CVD techniques include Black DiamondTM CVD organosilicate glass (OSG) films commercially available from Applied Materials, Inc., or CoralTM CVD films commercially available from Novellus Systems.
  • OSG Black DiamondTM CVD organosilicate glass
  • porous dielectric films can include single- phase materials, such as a silicon oxide-based matrix having terminal organic side groups that inhibit cross-linking during a curing process to create small voids (or pores).
  • porous dielectric films can include dual-phase materials, such as a silicon oxide-based matrix having inclusions of organic material (e.g., a porogen) that is decomposed and evaporated during a curing process.
  • the dielectric film may include an inorganic, silicate-based material, such as hydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ), deposited using SOD techniques.
  • HSQ hydrogen silsesquioxane
  • MSQ methyl silsesquioxane
  • examples of such films include FOx HSQ commercially available from Dow Corning, XLK porous HSQ commercially available from Dow Corning, and JSR LKD-5109 commercially available from JSR Microelectronics.
  • the dielectric film can include an organic material deposited using SOD techniques.
  • examples of such films include SiLK-I, PCT Docket No.: TDC-006 WO
  • the method includes a flow chart 500 beginning in 510 with optionally drying the dielectric film on the substrate in a first processing system.
  • the first processing system may include a drying system configured to remove, or partially remove, one or more contaminants in the dielectric film, including, for example, moisture, water, solvent, pore-generating material, residual pore- generating material, pore-generating molecules, fragments of pore-generating molecules, or any other contaminant that may interfere with a subsequent curing process.
  • the dielectric film is exposed to UV radiation.
  • the UV exposure may be performed in a second processing system.
  • the second processing system may include a curing system configured to perform a UV-assisted cure of the dielectric film by causing or partially causing cross-linking within the dielectric film in order to, for example, improve the mechanical properties of the dielectric film.
  • the substrate can be transferred from the first processing system to the second processing system under vacuum in order to minimize contamination.
  • the exposure of the dielectric film to UV radiation may include exposing the dielectric film to UV radiation from one or more UV lamps, one or more UV LEDs (light-emitting diodes), or one or more UV lasers, or a combination of two or more thereof.
  • the UV radiation may range in wavelength from approximately 100 nanometers (nm) to approximately 600 nm. Alternatively, the UV radiation may range in wavelength from approximately 200 nm to approximately 400 nm. Alternatively, the UV radiation may range in wavelength from approximately 150 nm to approximately 300 nm. Alternatively, the UV radiation may range in wavelength from approximately 170 nm to approximately 240 nm. Alternatively, the UV radiation may range in wavelength from approximately 200 nm to approximately 240 nm.
  • the dielectric film may be heated by elevating the temperature of the substrate to a UV thermal temperature ranging from approximately 200 degrees C to PCT Docket No.: TDC-006 WO
  • the UV thermal temperature can range from approximately 300 degrees C to approximately 500 degrees C.
  • the UV thermal temperature can range from approximately 350 degrees C to approximately 450 degrees C.
  • the dielectric film may be heated by elevating the temperature of the substrate. Heating of the substrate may include conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
  • the dielectric film may be exposed to IR radiation.
  • the exposure of the dielectric film to IR radiation may include exposing the dielectric film to IR radiation from one or more IR lamps, one or more IR LEDs (light emitting diodes), or one or more IR lasers, or a combination of two or more thereof.
  • the IR radiation may range in wavelength from approximately 1 micron to approximately 25 microns. Alternatively, the IR radiation may range in wavelength from approximately 2 microns to approximately 20 microns. Alternatively, the IR radiation may range in wavelength from approximately 8 microns to approximately 14 microns. Alternatively, the IR radiation may range in wavelength from approximately 8 microns to approximately 12 microns. Alternatively, the IR radiation may range in wavelength from approximately 9 microns to approximately 10 microns.
  • the dielectric film is exposed to IR radiation.
  • the exposure of the dielectric film to IR radiation may include exposing the dielectric film to IR radiation from one or more IR lamps, one or more IR LEDs (light emitting diodes), or one or more IR lasers, or both.
  • the IR radiation may range in wavelength from approximately 1 micron to approximately 25 microns. Alternatively, the IR radiation may range in wavelength from approximately 2 microns to approximately 20 microns. Alternatively, the IR radiation may range in wavelength from approximately 8 microns to approximately 14 microns. Alternatively, the IR radiation may range in wavelength from approximately 8 microns to approximately 12 microns. Alternatively, the IR radiation may range in wavelength from approximately 9 microns to approximately 10 microns.
  • the IR exposure may take place before the UV PCT Docket No.: TDC-006 WO
  • the dielectric film may be heated by elevating the temperature of the substrate to an IR thermal treatment temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the IR thermal treatment temperature can range from approximately 300 degrees C to approximately 500 degrees C.
  • the IR thermal treatment temperature can range from approximately 350 degrees C to approximately 450 degrees C.
  • the dielectric film may be heated by elevating the temperature of the substrate. Heating of the substrate may include conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
  • the dielectric film may be heated through absorption of IR energy.
  • the heating may further include conductively heating the substrate by placing the substrate on a substrate holder, and heating the substrate holder using a heating device.
  • the heating device may include a resistive heating element.
  • the inventors have recognized that the energy level (hv) delivered can be varied during different stages of the curing process.
  • the curing process can include mechanisms for the removal of moisture and/or contaminants, the removal of pore-generating material, the decomposition of pore-generating material, the generation of cross-linking initiators, the cross-linking of the dielectric film, and the diffusion of the cross-linking initiators. Each mechanism may require a different energy level and rate at which energy is delivered to the dielectric film.
  • the removal process may be facilitated by photon absorption at IR wavelengths.
  • the inventors have discovered that IR exposure assists the removal of pore- generating material more efficiently than thermal heating or UV exposure.
  • the removal process may be assisted by decomposition of the pore- PCT Docket No.: TDC-006 WO
  • the removal process may include IR exposure that is complemented by UV exposure.
  • UV exposure may assist a removal process having IR exposure by dissociating bonds between pore-generating material (e.g., pore-generating molecules and/or pore-generating molecular fragments) and the structure-forming material.
  • the removal and/or decomposition processes may be assisted by photon absorption at UV wavelengths (e.g., about 300 nm to about 450 nm).
  • the initiator generation process may be facilitated by using photon and phonon induced bond dissociation within the structure-forming material.
  • the inventors have discovered that the initiator generation process may be facilitated by UV exposure.
  • bond dissociation can require energy levels having a wavelength less than or equal to approximately 300 to 400 nm.
  • the cross-linking process can be facilitated by thermal energy sufficient for bond formation and reorganization.
  • the inventors have discovered that cross-linking may be facilitated by IR exposure or thermal heating or both.
  • bond formation and reorganization may require energy levels having a wavelength of approximately 9 microns which, for example, corresponds to the main absorbance peak in siloxane-based organosilicate low-k materials.
  • the drying process for the dielectric film, the IR exposure of the dielectric film, and the UV exposure of the dielectric film may be performed in the same processing system, or each may be performed in separate processing systems.
  • the drying process may be performed in the first processing system and the IR exposure and the UV exposure may be performed in the second processing system.
  • the IR exposure of the dielectric film may be performed in a different processing system than the UV exposure.
  • the IR exposure of the dielectric film may be performed in a third processing system, wherein the substrate can be transferred from the second processing system to the third processing system under vacuum in order to minimize contamination.
  • the dielectric film may optionally be post-treated in a post-treatment system configured to modify the cured dielectric film.
  • post-treatment may include thermal heating the dielectric film.
  • post-treatment may include spin coating or vapor depositing another film on the dielectric film in order to promote adhesion for subsequent films or improve hydrophobicity.
  • adhesion promotion may be achieved in a post- treatment system by lightly bombarding the dielectric film with ions.
  • the post-treatment may comprise performing one or more of depositing another film on the dielectric film, cleaning the dielectric film, or exposing the dielectric film to plasma.
  • the method includes a flow chart 600 beginning in 610 with forming a dielectric film, such as a low-k dielectric film, on the substrate.
  • a drying process may be performed to remove, or partially remove, one or more contaminants in the dielectric film, including, for example, moisture, solvent, or any other contaminant that may interfere with producing a high quality low-k dielectric film, or performing a subsequent process.
  • the dielectric film is exposed to first IR radiation.
  • the exposure of the dielectric film to the first IR radiation may facilitate the full removal or partial removal of moisture, water, contaminants, pore-generating material, residual pore-generating material, pore-generating material including pore-generating molecules and/or fragments of pore-generating molecules, cross-linking inhibitors, or residual cross-linking inhibitors, or any combination of two or more thereof from the dielectric film.
  • the exposure of the dielectric film may be performed for a time duration sufficiently long to substantially remove all moisture, water, contaminants, pore-generating material, residual pore-generating material, pore-generating material including pore-generating molecules and/or fragments of pore-generating molecules, cross-linking inhibitors, and residual cross-linking inhibitors, or any combination of two or more thereof from the dielectric film.
  • the exposure of the dielectric film to first IR radiation may include exposing the dielectric film to polychromatic IR radiation, monochromatic IR radiation, pulsed IR radiation, or continuous wave IR radiation, or a combination of two or more thereof.
  • the exposure of the dielectric film to first IR radiation may include exposing the dielectric film to IR radiation from one or more IR lamps, one or more IR LEDs (light emitting diodes), or one or more IR lasers, or a combination thereof.
  • the first IR radiation may comprise a power density ranging up to about 20 W/cm 2 .
  • the first IR radiation may comprise a power density ranging from about 1 W/cm 2 to about 20 W/cm 2 .
  • the first IR radiation may range in wavelength from approximately 1 micron to approximately 25 microns. Alternatively, the first IR radiation may range in wavelength from approximately 2 microns to approximately 20 microns. Alternatively, the first IR radiation may range in wavelength from approximately 8 microns to approximately 14 microns. Alternatively, the first IR radiation may range in wavelength from approximately 8 microns to approximately 12 microns. Alternatively, the first IR radiation may range in wavelength from approximately 9 microns to approximately 10 microns.
  • the first IR power density, or the first IR wavelength, or both, may be varied during the first IR exposure.
  • the dielectric film may be heated by elevating the temperature of the substrate to a first IR thermal treatment temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the first IR thermal treatment temperature can range from approximately 300 degrees C to approximately 500 degrees C.
  • the first IR thermal treatment temperature can range from approximately 350 degrees C to approximately 450 degrees C.
  • the dielectric film is exposed to UV radiation following the first IR exposure.
  • the exposure of the substrate to the UV radiation may facilitate the generation of cross-linking initiators (or free radicals) in the dielectric film.
  • the exposure of the dielectric film to UV radiation may include exposing the dielectric film to polychromatic UV radiation, monochromatic UV PCT Docket No.: TDC-006 WO
  • the exposure of the dielectric film to UV radiation may include exposing the dielectric film to UV radiation from one or more UV lamps, one or more UV LEDs (light emitting diodes), or one or more UV lasers, or a combination thereof.
  • the UV radiation may comprise a power density ranging from approximately 0.1 mW/cm 2 to approximately 2000 mW/cm 2 .
  • the UV radiation may range in wavelength from approximately 100 nanometers (nm) to approximately 600 nm.
  • the UV radiation may range in wavelength from approximately 200 nm to approximately 400 nm.
  • the UV radiation may range in wavelength from approximately 150 nm to approximately 300 nm.
  • the UV radiation may range in wavelength from approximately 170 nm to approximately 240 nm.
  • the UV radiation may range in wavelength from approximately 200 nm to approximately 240 nm.
  • the dielectric film may be heated by elevating the temperature of the substrate to a UV thermal treatment temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the UV thermal treatment temperature can range from approximately 300 degrees C to approximately 500 degrees C.
  • the UV thermal treatment temperature can range from approximately 350 degrees C to approximately 450 degrees C.
  • the dielectric film is exposed to second IR radiation.
  • the exposure of the dielectric film to the second IR radiation may facilitate cross-linking of the dielectric film.
  • the exposure of the dielectric film to second IR radiation may include exposing the dielectric film to polychromatic IR radiation, monochromatic IR radiation, pulsed IR radiation, or continuous wave IR radiation, or a combination of two or more thereof.
  • the exposure of the dielectric film to second IR radiation may include exposing the dielectric film to IR radiation from one or more IR lamps, one or more IR LEDs (light emitting diodes), or one or more IR lasers, or a combination thereof.
  • the second IR radiation may comprise a power density ranging up to about 20 W/cm 2 .
  • the second IR radiation may comprise a power density ranging from PCT Docket No.: TDC-006 WO
  • the second IR radiation may range in wavelength from approximately 1 micron to approximately 25 microns. Alternatively, the second IR radiation may range in wavelength from approximately 2 microns to approximately 20 microns. Alternatively, the second IR radiation may range in wavelength from approximately 8 microns to approximately 14 microns. Alternatively, the second IR radiation may range in wavelength from approximately 8 microns to approximately 12 microns. Alternatively, the second IR radiation may range in wavelength from approximately 9 microns to approximately 10 microns.
  • the second IR power density, or the second IR wavelength, or both may be varied during the second IR exposure.
  • the dielectric film may be heated by elevating the temperature of the substrate to a second IR thermal treatment temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the second IR thermal treatment temperature can range from approximately 300 degrees C to approximately 500 degrees C.
  • the second IR thermal treatment temperature can range from approximately 350 degrees C to approximately 450 degrees C.
  • the dielectric film may be exposed to second UV radiation.
  • the exposure of the dielectric film to the second UV radiation may facilitate the breaking or dissociating of bonds in the dielectric film in order to assist the removal of various materials described above.
  • the second UV radiation may comprise a UV power density ranging from approximately 0.1 mW/cm 2 to approximately 2000 mW/cm 2 .
  • the second UV radiation may range in wavelength from approximately 100 nanometers (nm) to approximately 600 nm.
  • the second UV radiation may range in wavelength from approximately 200 nm to approximately 400 nm.
  • the second UV radiation may range in wavelength from approximately 150 nm to approximately 300 nm.
  • the second UV radiation may range in wavelength from approximately 170 nm to approximately 240 nm. Alternatively, the second UV radiation may range in wavelength from approximately 200 nm to approximately 240 nm.
  • the dielectric film may be exposed to third IR radiation.
  • the third IR radiation may comprise a power density ranging up to about 20 W/cm 2 .
  • the third IR radiation may comprise a power density ranging from about 1 W/cm 2 to about 20 W/cm 2 .
  • the third IR radiation may range in wavelength from approximately 1 micron to approximately 25 microns.
  • the third IR radiation may range in wavelength from approximately 2 microns to approximately 20 microns.
  • the third IR radiation may range in wavelength from approximately 8 microns to approximately 14 microns.
  • the third IR radiation may range in wavelength from approximately 8 microns to approximately 12 microns.
  • the third IR radiation may range in wavelength from approximately 9 microns to approximately 10 microns.
  • the third IR power density, or the third IR wavelength, or both may be varied during the third IR exposure.
  • the dielectric film Preceding the UV exposure or the first IR exposure or both, the dielectric film may be heated by elevating the temperature of the substrate to a pre-thermal treatment temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the pre-thermal treatment temperature ranges from approximately 300 degrees C to approximately 500 degrees C and, desirably, the pre-thermal treatment temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
  • the dielectric film may be heated by elevating the temperature of the substrate to a post-thermal treatment temperature ranging from approximately 200 degrees C to approximately 600 degrees C.
  • the post-thermal treatment temperature ranges from approximately 300 degrees C to approximately 500 degrees C and, desirably, the post-thermal treatment temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
  • a method of curing a low dielectric constant (low-k) film on a substrate comprises forming a low-k dielectric film on a substrate, wherein the low-k dielectric film comprises a structure-forming material and a pore-generating material.
  • the low-k dielectric film is exposed to infrared (IR) radiation for a first time PCT Docket No.: TDC-006 WO
  • the low-k dielectric film is exposed to ultraviolet (UV) radiation for a second time duration, wherein the second time duration is a fraction of the first time duration, and wherein the second time duration begins at a first time following the start of the first time duration and ends at a second time preceding the end of the first time duration.
  • UV ultraviolet
  • FIG. 3 a method of curing a low dielectric constant (low-k) dielectric film on a substrate is described according to yet another embodiment.
  • the method comprises a flow chart 700 beginning in 710 with forming a low-k dielectric film on a substrate, wherein the low-k dielectric film comprises a structure-forming material and a pore-generating material.
  • the pore-generating material is substantially removed from the low-k dielectric film to form a porous low-k dielectric film.
  • cross-linking inhibitors may be substantially removed.
  • the cross-linking inhibitors may include moisture, water, contaminants, pore-generating material, residual pore-generating material, or pore-generating material including pore-generating molecules and/or fragments of pore-generating molecules, or any combination of two or more thereof.
  • cross-linking initiators are generated in the porous low-k dielectric film following the removal of the pore-generating material.
  • the structure-forming material of the porous low-k dielectric film is cross-linked following the generating the cross-linking initiators.
  • the method may optionally include breaking bonds in the low-k dielectric film in order to assist the removing.
  • the method comprises a flow chart 800 beginning in 810 with forming a low-k dielectric film on a substrate, wherein the low-k dielectric film comprises a structure-forming material and a cross-linking inhibitor.
  • the cross-linking inhibitor may include moisture, water, solvent, contaminants, pore-generating material, residual pore-generating material, a weakly bonded side group to the structure-forming material, pore-generating molecules, or fragments of pore-generating molecules, or any combination of two or more thereof.
  • the cross-linking inhibitor may comprise a pore- generating material, wherein the low-k dielectric film having the structure- PCT Docket No.: TDC-006 WO
  • the forming material and the cross-linking inhibitor comprises co-polymerizing a structure-forming molecule and a pore-generating molecule on a surface of the substrate.
  • the cross-linking inhibitor may comprise a pore-generating material, wherein the low-k dielectric film having the structure-forming material and the cross-linking inhibitor comprises depositing a structure-forming molecule having a pore-generating molecular side group weakly bonded to the structure-forming molecule on a surface of the substrate.
  • the low-k dielectric film is exposed to infrared (IR) radiation.
  • the exposure of the low-k dielectric film to IR radiation can comprise exposing the low-k dielectric film to polychromatic IR radiation, monochromatic IR radiation, pulsed IR radiation, or continuous wave IR radiation, or a combination of two or more thereof.
  • the exposure of the low-k dielectric film to IR radiation can comprise exposing the low-k dielectric film to IR radiation with a wavelength ranging from approximately 8 microns to approximately 12 microns.
  • the low-k dielectric film may be exposed to ultraviolet (UV) radiation.
  • the exposure of the low-k dielectric film to UV radiation may comprise exposing the low-k dielectric film to polychromatic UV radiation, monochromatic UV radiation, pulsed UV radiation, or continuous wave UV radiation, or a combination of two or more thereof.
  • the exposure of the low-k dielectric film to UV radiation may comprise exposing the low-k dielectric film to UV radiation with a wavelength ranging from approximately 100 nanometers to approximately 600 nanometers.
  • the UV exposure may follow the IR exposure.
  • the UV exposure may occur during part or all of the IR exposure.
  • the UV exposure occurring during the IR exposure may comprise a wavelength ranging from approximately 300 nanometers to approximately 450 nanometers.
  • a residual amount of the cross-linking inhibitor is adjusted in order to tune a mechanical property of the low-k dielectric film, an electrical property of the low-k dielectric film, an optical property of the low-k dielectric film, a pore size of the low-k dielectric film, or a porosity of the low-k dielectric film, or a combination of two or more thereof.
  • linking inhibitor may affect other properties including carbon concentration, hydrophobicity, and plasma resistance.
  • the mechanical property may comprise an elastic modulus (E), or a hardness (H), or both.
  • the electrical property may comprise a dielectric constant (k).
  • the optical property may comprise a refractive index (n).
  • the adjusting of the residual amount of the cross-linking inhibitor may comprise substantially removing the cross-linking inhibitor from the low-k dielectric film during the IR exposure.
  • the cross-linking inhibitor may be substantially removed prior to any exposure of the low-k dielectric film to ultraviolet (UV) radiation.
  • the adjusting of the residual amount of the cross-linking inhibitor may comprise adjusting a time duration for the IR exposure, an IR intensity for the IR exposure, or an IR dose for the IR exposure, or a combination of two or more thereof.
  • the adjusting of the residual amount of the cross-linking inhibitor may comprise adjusting a time duration for the UV exposure during the IR exposure, a UV intensity for the UV exposure, or a UV dose for the UV exposure, or a combination of two or more thereof.
  • the method may further comprise exposing the low-k dielectric film to ultraviolet (UV) radiation following the IR exposure, and exposing the low-k dielectric film to second IR radiation during the UV exposure. Additionally, the method may further comprise exposing the low-k dielectric film to third IR radiation following the UV exposure.
  • UV ultraviolet
  • the method may comprise exposing the low-k dielectric film to first ultraviolet (UV) radiation following the IR exposure, and exposing the low-k dielectric film to second UV radiation during the IR exposure, wherein the second UV exposure is different than the first UV exposure.
  • the adjusting of the residual amount of the cross-linking inhibitor may comprise adjusting a time duration for the second UV exposure during the IR exposure, a UV intensity for the second UV exposure, or a UV dose for the second UV exposure, or a combination of two or more thereof.
  • the exposure of the dielectric film to the second UV radiation may comprise a wavelength ranging from approximately 300 nanometers to approximately 450 nanometers.
  • the low-k dielectric film may be heated before the IR exposure, during the IR exposure, or after the IR exposure, or any combination of two or more thereof.
  • IR treatment(s) may be performed in vacuum conditions or a controlled atmosphere.
  • the structure-forming material may comprise diethoxymethylsilane (DEMS), and the pore-generating material may comprise a terpene; a norborene; 5-dimethyl-1 ,4-cyclooctadiene; decahydronaphthalene; ethylbenzene; or limonene; or a combination of two or more thereof.
  • the pore-generating material may comprise alpha-terpinene (ATRP).
  • a method of preparing a porous low-k dielectric film on a substrate comprises: forming a SiCOH-containing dielectric film on a substrate using a chemical vapor deposition (CVD) process, wherein the CVD process uses diethoxymethylsilane (DEMS) and a pore-generating material; exposing the SiCOH-containing dielectric film to IR radiation for a first time duration sufficiently long to substantially remove the pore-generating material; exposing the SiCOH-containing dielectric film to UV radiation for a second time duration following the IR exposure; and heating the SiCOH-containing dielectric film during part or all of said second time duration.
  • CVD chemical vapor deposition
  • the exposure of the SiCOH-containing dielectric film to IR radiation can comprise IR radiation with a wavelength ranging from approximately 9 microns to approximately 10 microns (e.g., 9.4 microns).
  • the exposure of the SiCOH-containing dielectric film to UV radiation can comprise UV radiation with a wavelength ranging from approximately 170 nanometers to approximately 240 nanometers (e.g., 222nm).
  • the heating of the SiCOH- containing dielectric film can comprise heating the substrate to a temperature ranging from approximately 300 degrees C to approximately 500 degrees C.
  • the IR exposure and the UV exposure may be performed in separate process chambers, or the IR exposure and the UV exposure may be performed in the same process chamber.
  • the pore-generating material may comprise a terpene; a norborene; 5- dimethyl-1 ,4-cyclooctadiene; decahydronaphthalene; ethylbenzene; or PCT Docket No.: TDC-006 WO
  • the pore- generating material may comprise alpha-terpinene (ATRP).
  • ATRP alpha-terpinene
  • Table 1 provides data for a porous low-k dielectric film intended to have a dielectric constant of about 2.2 to 2.25.
  • the porous low-k dielectric film comprises a porous SiCOH-containing dielectric film formed with a CVD process using a structure-forming material comprising diethoxymethylsilane (DEMS) and a pore-generating material comprising alpha-terpinene (ATRP).
  • DEMS diethoxymethylsilane
  • ATRP alpha-terpinene
  • the "Pristine" SiCOH-containing dielectric film having a nominal thickness (Angstroms, A) and refractive index (n) is first exposed to IR radiation resulting in a "Post-IR” thickness (A) and "Post-IR” refractive index (n). Thereafter, the "Post-IR” SiCOH-containing dielectric film is exposed to UV radiation while being thermally heated resulting in a "Post-UV+Heating” thickness (A) and "Post-UV+Heating” refractive index (n).
  • residual pore-generating material in the film e.g., less porous film, and/ot oxidation of the film.
  • a method of preparing a porous low- k dielectric film on a substrate comprises: forming a SiCOH-containing dielectric film on a substrate using a chemical vapor deposition (CVD) process, wherein the CVD process uses diethoxymethylsilane (DEMS) and a pore-generating material; exposing the SiCOH-containing dielectric film to first IR radiation for a first time duration sufficiently long to substantially remove the pore-generating material; exposing the SiCOH-containing dielectric film to UV radiation for a second time duration following the first IR exposure; exposing the SiCOH-containing dielectric film to second IR radiation for a third time duration during the UV exposure; and exposing the SiCOH-containing dielectric film to third IR radiation for a fourth time duration following the UV exposure.
  • CVD chemical vapor deposition
  • the method may further comprise heating the SiCOH-containing dielectric film during part or all of the second time duration. Additionally, the second time duration may coincide with the second time duration.
  • the exposure of the SiCOH-containing dielectric film to first IR radiation can comprise IR radiation with a wavelength ranging from approximately 9 microns to approximately 10 microns (e.g., 9.4 microns).
  • the exposure of the SiCOH-containing dielectric film to UV radiation can comprise UV radiation with a wavelength ranging from approximately 170 nanometers to approximately 230 nanometers (e.g., 222nm).
  • the exposure of the SiCOH- containing dielectric film to second IR radiation can comprise IR radiation with a wavelength ranging from approximately 9 microns to approximately 10 microns (e.g., 9.4 microns).
  • the exposure of the SiCOH-containing dielectric film to third IR radiation can comprise IR radiation with a wavelength ranging from approximately 9 microns to approximately 10 microns (e.g., 9.4 microns).
  • the heating of the SiCOH-containing dielectric film can comprise heating the substrate to a temperature ranging from approximately 300 degrees C to approximately 500 degrees C.
  • the pore-generating material may comprise a terpene; a norborene; 5-dimethyl-1 ,4-cyclooctadiene; decahydronaphthalene; ethylbenzene; or PCT Docket No.: TDC-006 WO
  • the pore- generating material may comprise alpha-terpinene (ATRP).
  • Table 2 provides data for a porous low-k dielectric film intended to have a dielectric constant of about 2.2 to 2.25.
  • the porous low-k dielectric film comprises a porous SiCOH-containing dielectric film formed with a CVD process using a structure-forming material comprising diethoxymethylsilane (DEMS) and a pore-generating material comprising alpha-terpinene (ATRP).
  • the "Pristine" SiCOH-containing dielectric film having a nominal thickness (Angstroms, A) and refractive index (n) is cured using two processes, namely: (1 ) a conventional UV/Thermal process (i.e., no IR exposure); and (2) a curing process wherein the pristine film is exposed to IR radiation (9.4 micron), followed by exposure to IR radiation (9.4 micron) and UV radiation (222 nm), followed by exposure to IR radiation (9.4 micron).
  • Table 2 provides the "Post-UV/Thermal” thickness (A) and "Post- UV/Thermal” refractive index (n) for the conventional UV/Thermal process, and the "Post-IR+UV/IR+IR” thickness (A) and "Post-IR+UV/IR+IR” refractive index (n) for the IR+UV/IR+IR process. Additionally, the shrinkage (%) in film thickness is provided Post-UV/Thermal and Post-IR+UV/IR+IR. Furthermore, the dielectric constant (k), the elastic modulus (E) (GPa) and the hardness (H) (GPa) are provided for the resultant, cured porous low-k dielectric film.
  • k dielectric constant
  • E elastic modulus
  • H hardness
  • IR exposure and UV exposure can lead to the formation of a diethoxymethylsilane (DEMS)-based, porous dielectric film comprising a dielectric constant of about 2.1 or less, a refractive index of about 1 .31 or less, an elastic modulus of about 4 GPa or greater, and a hardness of about 0.45 GPa or greater.
  • DEMS diethoxymethylsilane
  • Table 3 provides data for a porous low-k dielectric film intended to have a dielectric constant of about 2.
  • the porous low-k dielectric film comprises a porous SiCOH-containing dielectric film formed with a CVD process using a structure-forming material comprising diethoxymethylsilane (DEMS) and a pore-generating material comprising alpha-terpinene (ATRP).
  • DEMS diethoxymethylsilane
  • ATRP alpha-terpinene
  • the pristine SiCOH-containing dielectric film is cured using three processes, namely: (1 ) a conventional UV/Thermal process (i.e., no IR exposure); (2) a curing process wherein the pristine film is exposed to IR radiation only (9.4 micron); (3) a curing process wherein the pristine film is exposed to IR radiation (9.4 micron) followed by a conventional UV/Thermal process; and (4) a curing process wherein the pristine film is exposed to IR radiation (9.4 micron), followed by exposure to IR radiation (9.4 micron) and UV radiation (222 nm), followed by exposure to IR radiation (9.4 micron).
  • Table 3 provides the resulting refractive index (n), shrinkage (%), dielectric constant (k), elastic modulus (E) (GPa) and hardness (H) (GPa) following each of the curing processes. As shown in Table 3, the use of IR PCT Docket No.: TDC-006 WO
  • a dielectric constant less than 1.7 (as opposed to greater than 1.9).
  • the mechanical properties (E and H) can be improved by using UV radiation.
  • IR exposure and UV exposure can lead to the formation of a diethoxymethylsilane (DEMS)-based, porous dielectric film comprising a dielectric constant of about 1.7 or less, a refractive index of about 1 .17 or less, an elastic modulus of about 1 .5 GPa or greater, and a hardness of about 0.2 GPa or greater.
  • DEMS diethoxymethylsilane
  • FIG. 5A shows a processing system 1 for treating a dielectric film on a substrate, according to one embodiment.
  • the processing system 1 includes a drying system 20, and a curing system 10 coupled to the drying system 20.
  • the drying system 10 can be configured to remove, or reduce to sufficient levels, one or more contaminants, pore-generating materials, and/or cross-linking inhibitors in the dielectric film, including, for example, moisture, water, solvent, contaminants, pore-generating material, residual pore-generating material, a weakly bonded side group to the structure-forming material, pore-generating molecules, fragments of pore-generating molecules, cross-linking inhibitors, fragments of cross-linking inhibitors, or any other contaminant that may interfere with a curing process performed in the curing system 10.
  • a sufficient reduction of a specific contaminant present within the dielectric film can include a reduction of approximately 10% to approximately 100% of the specific contaminant.
  • the level of contaminant reduction may be measured using Fourier transform infrared (FTIR) spectroscopy, or mass spectroscopy.
  • FTIR Fourier transform infrared
  • mass spectroscopy Alternatively, for example, a sufficient PCT Docket No.: TDC-006 WO
  • the curing system 10 may be configured to cure the dielectric film by causing or partially causing cross-linking within the dielectric film in order to, for example, improve the mechanical properties of the dielectric film. Furthermore, the curing system 10 may be configured to cure the dielectric film by causing or partially causing cross-link initiation, removal of pore-generating material, decomposition of pore-generating material, etc.
  • the curing system 10 can include one or more radiation sources configured to expose the substrate having the dielectric film to electro-magnetic (EM) radiation at multiple EM wavelengths.
  • the one or more radiation sources can include an infrared (IR) radiation source and an ultraviolet (UV) radiation source.
  • IR infrared
  • UV ultraviolet
  • the exposure of the substrate to UV radiation and IR radiation can be performed simultaneously, sequentially, or partially over-lapping one another.
  • the exposure of the substrate to UV radiation can, for instance, precede the exposure of the substrate to IR radiation or follow the exposure of the substrate to IR radiation or both.
  • the exposure of the substrate to IR radiation can, for instance, precede the exposure of the substrate to UV radiation or follow the exposure of the substrate to UV radiation or both.
  • the IR radiation can include an IR radiation source ranging from approximately 1 micron to approximately 25 microns. Additionally, for example, the IR radiation may range from about 2 microns to about 20 microns, or from about 8 microns to about 14 microns, or from about 8 microns to about 12 microns, or from about 9 microns to about 10 microns. Additionally, for example, the UV radiation can include a UV wave-band source producing radiation ranging from approximately 100 nanometers (nm) to approximately 600 nm.
  • the UV radiation may range from about 200 nm to about 400 nm, or from about 150 nm to about 300 nm, or from about 170 to about 240 nm, or from about 200 nm to about 240 nm.
  • a transfer system 30 can be coupled to the drying system 20 in order to transfer substrates into and out of the drying system 20 and the curing system 10, and exchange substrates with a multielement manufacturing system 40.
  • Transfer system 30 may transfer substrates to and from drying system 20 and curing system 10 while maintaining a vacuum environment.
  • the drying and curing systems 20, 10, and the transfer system 30 can, for example, include a processing element within the multi-element manufacturing system 40.
  • the multielement manufacturing system 40 can permit the transfer of substrates to and from processing elements including such devices as etch systems, deposition systems, coating systems, patterning systems, metrology systems, etc.
  • an isolation assembly 50 can be utilized to couple each system.
  • the isolation assembly 50 can include at least one of a thermal insulation assembly to provide thermal isolation, and a gate valve assembly to provide vacuum isolation.
  • the drying and curing systems 20 and 10, and transfer system 30 can be placed in any sequence.
  • FIG. 5B shows a processing system 100 for treating a dielectric film on a substrate.
  • the processing system 100 includes a "cluster-tool" arrangement for a drying system 1 10, and a curing system 120.
  • the drying system 1 10 can be configured to remove, or reduce to sufficient levels, one or more contaminants, pore-generating materials, and/or cross-linking inhibitors in the dielectric film, including, for example, moisture, water, solvent, contaminants, pore-generating material, residual pore-generating material, a weakly bonded side group to the structure-forming material, pore-generating molecules, fragments of pore-generating molecules, cross-linking inhibitors, fragments of cross-linking inhibitors, or any other contaminant that may interfere with a curing process performed in the curing system 120.
  • the curing system 120 can be configured to cure the dielectric film by causing or partially causing cross-linking within the dielectric film in order to, for example, improve the mechanical properties of PCT Docket No.: TDC-006 WO
  • the processing system 100 can optionally include a post-treatment system 140 configured to modify the cured dielectric film.
  • post-treatment can include thermal heating.
  • post-treatment can include spin coating or vapor depositing another film on the dielectric film in order to promote adhesion for subsequent films or improve hydrophobicity.
  • adhesion promotion may be achieved in a post-treatment system by lightly bombarding the dielectric film with ions by, for example, exposing the substrate to plasma.
  • a transfer system 130 can be coupled to the drying system 1 10 in order to transfer substrates into and out of the drying system 1 10, and can be coupled to the curing system 120 in order to transfer substrates into and out of the curing system 120, and can be coupled to the optional post-treatment system 140 in order to transfer substrates into and out of the post-treatment system 140.
  • Transfer system 130 may transfer substrates to and from drying system 1 10, curing system 120 and optional post-treatment system 140 while maintaining a vacuum environment. [00116] Additionally, transfer system 130 can exchange substrates with one or more substrate cassettes (not shown). Although only two or three process systems are illustrated in FIG.
  • transfer system 130 can access transfer system 130 including for example such devices as etch systems, deposition systems, coating systems, patterning systems, metrology systems, etc.
  • an isolation assembly 150 can be utilized to couple each system.
  • the isolation assembly 150 can include at least one of a thermal insulation assembly to provide thermal isolation, and a gate valve assembly to provide vacuum isolation.
  • the transfer system 130 can serve as part of the isolation assembly 150.
  • FIG. 5C shows a processing system 200 for treating a dielectric film on a substrate.
  • the processing system 200 includes a drying system 210, and a curing system 220.
  • the drying system 210 can be configured to remove, or reduce to sufficient levels, one or more contaminants, pore-generating PCT Docket No.: TDC-006 WO
  • cross-linking inhibitors in the dielectric film including, for example, moisture, water, solvent, contaminants, pore-generating material, residual pore-generating material, a weakly bonded side group to the structure-forming material, pore-generating molecules, fragments of pore- generating molecules, cross-linking inhibitors, fragments of cross-linking inhibitors, or any other contaminant that may interfere with a curing process performed in the curing system 220.
  • the curing system 220 can be configured to cure the dielectric film by causing or partially causing cross-linking within the dielectric film in order to, for example, improve the mechanical properties of the dielectric film.
  • the processing system 200 can optionally include a post-treatment system 240 configured to modify the cured dielectric film.
  • post-treatment can include thermal heating.
  • post-treatment can include spin coating or vapor depositing another film on the dielectric film in order to promote adhesion for subsequent films or improve hydrophobicity.
  • adhesion promotion may be achieved in a post-treatment system by lightly bombarding the dielectric film with ions by, for example, exposing the substrate to plasma.
  • Drying system 210, curing system 220, and post-treatment system 240 can be arranged horizontally or may be arranged vertically (i.e., stacked). Also, as illustrated in FIG. 5C, a transfer system 230 can be coupled to the drying system 210 in order to transfer substrates into and out of the drying system 210, can be coupled to the curing system 220 in order to transfer substrates into and out of the curing system 220, and can be coupled to the optional post-treatment system 240 in order to transfer substrates into and out of the post-treatment system 240. Transfer system 230 may transfer substrates to and from drying system 210, curing system 220 and optional post-treatment system 240 while maintaining a vacuum environment.
  • transfer system 230 can exchange substrates with one or more substrate cassettes (not shown). Although only three process systems are illustrated in FIG. 5C, other process systems can access transfer system 230 including for example such devices as etch systems, deposition systems, coating systems, patterning systems, metrology systems, etc. In order to isolate the processes occurring in the first and second systems, an PCT Docket No.: TDC-006 WO
  • isolation assembly 250 can be utilized to couple each system.
  • the isolation assembly 250 can include at least one of a thermal insulation assembly to provide thermal isolation, and a gate valve assembly to provide vacuum isolation.
  • the transfer system 230 can serve as part of the isolation assembly 250.
  • IR exposure of the substrate can be performed in the drying system 210, or the curing system 220, or a separate treatment system (not shown).
  • At least one of the drying system 10 and the curing system 20 of the processing system 1 as depicted in FIG. 5A includes at least two transfer openings to permit the passage of the substrate therethrough.
  • the drying system 10 includes two transfer openings, the first transfer opening permits the passage of the substrate between the drying system 10 and the transfer system 30 and the second transfer opening permits the passage of the substrate between the drying system and the curing system.
  • each treatment system 1 10, 120, 140 and 210, 220, 240, respectively, includes at least one transfer opening to permit the passage of the substrate therethrough.
  • the drying system 300 can include a thermal treatment device 330 coupled to drying chamber 310, or to substrate holder 320, and configured to evaporate contaminants, such as for example moisture, water, residual solvent, etc., by elevating the temperature of substrate 325.
  • the drying system 300 can include a microwave treatment device 340 coupled to the drying chamber 310, and configured to locally heat contaminants in the presence of an oscillating electric field.
  • the drying process can utilize the thermal treatment device 330, or the microwave treatment device 340, or both to facilitate drying a dielectric film on substrate 325.
  • the thermal treatment device 330 can include one or more conductive heating elements embedded in substrate holder 320 coupled to a power source and a temperature controller.
  • the thermal treatment device 330 can include one or more radiative heating elements coupled to a power source and a controller.
  • each radiative heating element can include a heat lamp coupled to a power source configured to supply electrical power.
  • the temperature of substrate 325 can, for example, range from approximately 20 degrees C to approximately 600 degrees C, and desirably, the temperature may range from approximately 200 degrees C to approximately 600 degrees C.
  • the temperature of substrate 325 can range from approximately 300 degrees C to approximately 500 degrees C, or from approximately 350 degrees C to approximately 450 degrees C.
  • the microwave treatment source 340 can include a variable frequency microwave source configured to sweep the microwave frequency through a bandwidth of frequencies. Frequency variation avoids charge buildup and, hence, permits damage-free application of microwave drying techniques to sensitive electronic devices.
  • the drying system 300 can include a drying system incorporating both a variable frequency microwave device and a thermal treatment device, such as for example the microwave furnace commercially available from Lambda Technologies, Inc. (860 Aviation Parkway, Suite 900, Morrisville, NC 27560).
  • the substrate holder 320 may or may not be configured to clamp substrate 325.
  • substrate holder 320 may be configured to mechanically or electrically clamp substrate 325.
  • drying system 300 may include an IR radiation source for exposing the substrate 325 to IR radiation.
  • drying system 300 can further include a gas injection system 350 coupled to the drying chamber and configured to introduce a purge gas to drying chamber 310.
  • the purge gas can, for example, include an inert gas, such as a noble gas or nitrogen.
  • drying system 300 can include a vacuum pumping system 355 coupled to drying chamber 310 and configured to evacuate the drying chamber 310.
  • substrate 325 can be subject to an inert gas environment with or without vacuum conditions.
  • drying system 300 can include a controller 360 coupled to drying chamber 310, substrate holder 320, thermal treatment device 330, microwave treatment device 340, gas injection system 350, and vacuum pumping system 355.
  • Controller 360 includes a microprocessor, a memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to the drying system 300 as well as monitor outputs from the drying system 300.
  • a program stored in the memory is utilized to interact with the drying system 300 according to a stored process recipe.
  • the controller 360 can be used to configure any number of processing elements (310, 320, 330, 340, 350, or 355), and the controller 360 can collect, provide, process, store, and display data from processing elements.
  • the controller 360 can include a number of applications for controlling one or more of the processing elements.
  • controller 360 can include a graphic user interface (GUI) component (not shown) that can provide interfaces that enable a user to monitor and/or control one or more processing elements.
  • GUI graphic user interface
  • Curing system 400 includes a curing chamber 410 configured to produce a clean, contaminant-free environment for curing a substrate 425 resting on substrate holder 420.
  • Curing system 400 further includes one or more radiation sources configured to expose substrate 425 having the dielectric film to electro-magnetic (EM) radiation at single, multiple, narrow-band, or broadband EM wavelengths.
  • the one or more radiation sources can include an optional infrared (IR) radiation source 440 and an ultraviolet (UV) radiation source 445. The exposure of the substrate to UV radiation and optionally IR radiation can be performed simultaneously, sequentially, or over-lapping one another.
  • the IR radiation source 440 may include a broad-band IR source (e.g., polychromatic), or may include a narrow-band IR source (e.g., monochromatic).
  • the IR radiation source may include one or more IR lamps, one or more IR LEDs, or one or more IR lasers (continuous wave (CW), tunable, or pulsed), or any combination thereof.
  • the IR power density may range up to about 20 W/cm 2 .
  • the IR power density may range from about 1 W/cm 2 to about 20 W/cm 2 .
  • the IR radiation wavelength may PCT Docket No.: TDC-006 WO
  • the IR radiation wavelength may range from approximately 1 micron to approximately 25 microns.
  • the IR radiation wavelength may range from approximately 8 microns to approximately 14 microns.
  • the IR radiation wavelength may range from approximately 8 microns to approximately 12 microns.
  • the IR radiation wavelength may range from approximately 9 microns to approximately 10 microns.
  • the IR radiation source 440 may include a CO 2 laser system.
  • the IR radiation source 440 may include an IR element, such as a ceramic element or silicon carbide element, having a spectral output ranging from approximately 1 micron to approximately 25 microns, or the IR radiation source 440 can include a semiconductor laser (diode), or ion, Tksapphire, or dye laser with optical parametric amplification.
  • an IR element such as a ceramic element or silicon carbide element, having a spectral output ranging from approximately 1 micron to approximately 25 microns
  • the IR radiation source 440 can include a semiconductor laser (diode), or ion, Tksapphire, or dye laser with optical parametric amplification.
  • the UV radiation source 445 may include a broad-band UV source (e.g., polychromatic), or may include a narrow-band UV source (e.g., monochromatic).
  • the UV radiation source may include one or more UV lamps, one or more UV LEDs, or one or more UV lasers (continuous wave (CW), tunable, or pulsed), or any combination thereof.
  • UV radiation may be generated, for instance, from a microwave source, an arc discharge, a dielectric barrier discharge, or electron impact generation.
  • the UV power density may range from approximately 0.1 mW/cm 2 to approximately 2000 mW/cm 2 .
  • the UV wavelength may range from approximately 100 nanometers (nm) to approximately 600 nm.
  • the UV radiation may range from approximately 200 nm to approximately 400 nm. Alternatively, the UV radiation may range from approximately 150 nm to approximately 300 nm. Alternatively, the UV radiation may range from approximately 170 nm to approximately 240 nm. Alternatively, the UV radiation may range from approximately 200 nm to approximately 240 nm.
  • the UV radiation source 445 may include a direct current (DC) or pulsed lamp, such as a Deuterium (D 2 ) lamp, having a spectral output ranging from approximately 180 nm to approximately 500 nm, or the UV radiation source 445 may include a semiconductor laser (diode), (nitrogen) gas laser, frequency-tripled (or quadrupled) Nd:YAG laser, or copper vapor laser.
  • DC direct current
  • D 2 Deuterium
  • the IR radiation source 440, or the UV radiation source 445, or both, may include any number of optical device to adjust one or more properties of PCT Docket No.: TDC-006 WO
  • each source may further include optical filters, optical lenses, beam expanders, beam collimators, etc.
  • optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
  • the substrate holder 420 can further include a temperature control system that can be configured to elevate and/or control the temperature of substrate 425.
  • the temperature control system can be a part of a thermal treatment device 430.
  • the substrate holder 420 can include one or more conductive heating elements embedded in substrate holder 420 coupled to a power source and a temperature controller.
  • each heating element can include a resistive heating element coupled to a power source configured to supply electrical power.
  • the substrate holder 420 could optionally include one or more radiative heating elements.
  • the temperature of substrate 425 can, for example, range from approximately 20 degrees C to approximately 600 degrees C, and desirably, the temperature may range from approximately 200 degrees C to approximately 600 degrees C.
  • the temperature of substrate 425 can range from approximately 300 degrees C to approximately 500 degrees C, or from approximately 350 degrees C to approximately 450 degrees C.
  • curing system 400 can further include a gas injection system 450 coupled to the curing chamber 410 and configured to introduce a purge gas to curing chamber 410.
  • the purge gas can, for example, include an inert gas, such as a noble gas or nitrogen.
  • the purge gas can include other gases, such as for example H 2 , NH 3 , C x H y , or any combination thereof.
  • curing system 400 can further include a vacuum pumping system 455 coupled to curing chamber 410 and configured to evacuate the curing chamber 410.
  • substrate 425 can be subject to a purge gas environment with or without vacuum conditions.
  • curing system 400 can include a controller 460 coupled to curing chamber 410, substrate holder 420, thermal treatment device 430, PCT Docket No.: TDC-006 WO
  • Controller 460 includes a microprocessor, a memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to the curing system 400 as well as monitor outputs from the curing system 400.
  • a program stored in the memory is utilized to interact with the curing system 400 according to a stored process recipe.
  • the controller 460 can be used to configure any number of processing elements (410, 420, 430, 440, 445, 450, or 455), and the controller 460 can collect, provide, process, store, and display data from processing elements.
  • the controller 460 can include a number of applications for controlling one or more of the processing elements.
  • controller 460 can include a graphic user interface (GUI) component (not shown) that can provide easy to use interfaces that enable a user to monitor and/or control one or more processing elements.
  • GUI graphic user interface
  • the controllers 360 and 460 may be implemented as a DELL PRECISION WORKSTATION 610TM.
  • the controllers 360 and 460 may also be implemented as a general purpose computer, processor, digital signal processor, etc., which causes a substrate processing apparatus to perform a portion or all of the processing steps of the invention in response to the controllers 360 and 460 executing one or more sequences of one or more instructions contained in a computer readable medium.
  • the computer readable medium or memory for holding instructions programmed according to the teachings of the invention and for containing data structures, tables, records, or other data described herein.
  • Examples of computer readable media are compact discs, hard disks, floppy disks, tape, magneto-optical disks, PROMs (EPROM, EEPROM, flash EPROM), DRAM, SRAM, SDRAM, or any other magnetic medium, compact discs (e.g., CD-ROM), or any other optical medium, punch cards, paper tape, or other physical medium with patterns of holes, a carrier wave (described below), or any other medium from which a computer can read.
  • the controllers 360 and 460 may be locally located relative to the drying system 300 and curing system 400, or may be remotely located relative to the drying system 300 and curing system 400 via an internet or intranet. Thus, the controllers 360 and 460 can exchange data with the drying system PCT Docket No.: TDC-006 WO
  • the controllers 360 and 460 may be coupled to an intranet at a customer site (i.e., a device maker, etc.), or coupled to an intranet at a vendor site (i.e., an equipment manufacturer). Furthermore, another computer (i.e., controller, server, etc.) can access controllers 360 and 460 to exchange data via at least one of a direct connection, an intranet, and the internet.
  • a customer site i.e., a device maker, etc.
  • a vendor site i.e., an equipment manufacturer
  • another computer i.e., controller, server, etc.
  • controllers 360 and 460 can access controllers 360 and 460 to exchange data via at least one of a direct connection, an intranet, and the internet.
  • embodiments of this invention may be used as or to support a software program executed upon some form of processing core (such as a processor of a computer, e.g., controller 360 or 460) or otherwise implemented or realized upon or within a machine-readable medium.
  • a machine-readable medium includes any mechanism for storing information in a form readable by a machine (e.g., a computer).
  • a machine- readable medium can include media such as a read only memory (ROM); a random access memory (RAM); a magnetic disk storage media; an optical storage media; and a flash memory device, etc.

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L’invention concerne un procédé de traitement thermique d’une pellicule diélectrique à faible constante diélectrique (faible k) sur un substrat, dans lequel la constante diélectrique de la pellicule à faible constante diélectrique est inférieure à une valeur d’environ 4. Le procédé consiste à exposer la pellicule diélectrique à faible constante diélectrique à un rayonnement infrarouge (IR) et à un rayonnement ultraviolet (UV).
PCT/US2009/035878 2008-03-06 2009-03-03 Procédé de traitement thermique d’une pellicule diélectrique poreuse à faible constante diélectrique Ceased WO2009111473A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112009000518T DE112009000518T5 (de) 2008-03-06 2009-03-03 Verfahren zum Aushärten eines porösen dielektrischen Films mit niedriger Dielektrizitätskonstante
CN2009801078443A CN101960556B (zh) 2008-03-06 2009-03-03 用于固化多孔低介电常数电介质膜的方法
JP2010549819A JP5490024B2 (ja) 2008-03-06 2009-03-03 有孔性低誘電率誘電膜の硬化方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US12/043,835 US20090226694A1 (en) 2008-03-06 2008-03-06 POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING
US12/043,772 2008-03-06
US12/043,772 US7858533B2 (en) 2008-03-06 2008-03-06 Method for curing a porous low dielectric constant dielectric film
US12/043,835 2008-03-06
US12/043,814 2008-03-06
US12/043,814 US7977256B2 (en) 2008-03-06 2008-03-06 Method for removing a pore-generating material from an uncured low-k dielectric film

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WO2009111473A2 true WO2009111473A2 (fr) 2009-09-11
WO2009111473A3 WO2009111473A3 (fr) 2010-01-14

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Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001288954A1 (en) * 2000-09-13 2002-03-26 Shipley Company, L.L.C. Electronic device manufacture
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US20030224544A1 (en) * 2001-12-06 2003-12-04 Shipley Company, L.L.C. Test method
JP3726071B2 (ja) * 2002-06-05 2005-12-14 東京エレクトロン株式会社 熱処理方法
US7404990B2 (en) * 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US6897162B2 (en) * 2003-10-20 2005-05-24 Wafermasters, Inc. Integrated ashing and implant annealing method
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US7622378B2 (en) * 2005-11-09 2009-11-24 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US20070173071A1 (en) * 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
JP2007214156A (ja) * 2006-02-07 2007-08-23 Yatabe Hitoo 半導体デバイス
JP2007324170A (ja) * 2006-05-30 2007-12-13 Yoshimi Shiotani 照射装置及び照射装置を用いた半導体製造装置

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Also Published As

Publication number Publication date
KR101538531B1 (ko) 2015-07-21
CN102789975A (zh) 2012-11-21
JP5490024B2 (ja) 2014-05-14
CN101960556B (zh) 2013-09-18
CN101960556A (zh) 2011-01-26
CN102789975B (zh) 2015-10-14
TW200949941A (en) 2009-12-01
TWI421939B (zh) 2014-01-01
JP2014007416A (ja) 2014-01-16
WO2009111473A3 (fr) 2010-01-14
DE112009000518T5 (de) 2011-05-05
KR20120041641A (ko) 2012-05-02
JP2011514678A (ja) 2011-05-06

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