WO2009111473A3 - Procédé de traitement thermique d’une pellicule diélectrique poreuse à faible constante diélectrique - Google Patents

Procédé de traitement thermique d’une pellicule diélectrique poreuse à faible constante diélectrique Download PDF

Info

Publication number
WO2009111473A3
WO2009111473A3 PCT/US2009/035878 US2009035878W WO2009111473A3 WO 2009111473 A3 WO2009111473 A3 WO 2009111473A3 US 2009035878 W US2009035878 W US 2009035878W WO 2009111473 A3 WO2009111473 A3 WO 2009111473A3
Authority
WO
WIPO (PCT)
Prior art keywords
curing
dielectric film
dielectric constant
porous low
low dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/035878
Other languages
English (en)
Other versions
WO2009111473A2 (fr
Inventor
Junjun Liu
Dorel I. Toma
Eric M. Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/043,835 external-priority patent/US20090226694A1/en
Priority claimed from US12/043,772 external-priority patent/US7858533B2/en
Priority claimed from US12/043,814 external-priority patent/US7977256B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to DE112009000518T priority Critical patent/DE112009000518T5/de
Priority to CN2009801078443A priority patent/CN101960556B/zh
Priority to JP2010549819A priority patent/JP5490024B2/ja
Publication of WO2009111473A2 publication Critical patent/WO2009111473A2/fr
Publication of WO2009111473A3 publication Critical patent/WO2009111473A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L’invention concerne un procédé de traitement thermique d’une pellicule diélectrique à faible constante diélectrique (faible k) sur un substrat, dans lequel la constante diélectrique de la pellicule à faible constante diélectrique est inférieure à une valeur d’environ 4. Le procédé consiste à exposer la pellicule diélectrique à faible constante diélectrique à un rayonnement infrarouge (IR) et à un rayonnement ultraviolet (UV).
PCT/US2009/035878 2008-03-06 2009-03-03 Procédé de traitement thermique d’une pellicule diélectrique poreuse à faible constante diélectrique Ceased WO2009111473A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112009000518T DE112009000518T5 (de) 2008-03-06 2009-03-03 Verfahren zum Aushärten eines porösen dielektrischen Films mit niedriger Dielektrizitätskonstante
CN2009801078443A CN101960556B (zh) 2008-03-06 2009-03-03 用于固化多孔低介电常数电介质膜的方法
JP2010549819A JP5490024B2 (ja) 2008-03-06 2009-03-03 有孔性低誘電率誘電膜の硬化方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US12/043,835 US20090226694A1 (en) 2008-03-06 2008-03-06 POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING
US12/043,772 2008-03-06
US12/043,772 US7858533B2 (en) 2008-03-06 2008-03-06 Method for curing a porous low dielectric constant dielectric film
US12/043,835 2008-03-06
US12/043,814 2008-03-06
US12/043,814 US7977256B2 (en) 2008-03-06 2008-03-06 Method for removing a pore-generating material from an uncured low-k dielectric film

Publications (2)

Publication Number Publication Date
WO2009111473A2 WO2009111473A2 (fr) 2009-09-11
WO2009111473A3 true WO2009111473A3 (fr) 2010-01-14

Family

ID=41056604

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/035878 Ceased WO2009111473A2 (fr) 2008-03-06 2009-03-03 Procédé de traitement thermique d’une pellicule diélectrique poreuse à faible constante diélectrique

Country Status (6)

Country Link
JP (2) JP5490024B2 (fr)
KR (1) KR101538531B1 (fr)
CN (2) CN102789975B (fr)
DE (1) DE112009000518T5 (fr)
TW (1) TWI421939B (fr)
WO (1) WO2009111473A2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9017933B2 (en) * 2010-03-29 2015-04-28 Tokyo Electron Limited Method for integrating low-k dielectrics
JP2012104703A (ja) * 2010-11-11 2012-05-31 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
CN104143524A (zh) * 2013-05-07 2014-11-12 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US10109478B2 (en) * 2016-09-09 2018-10-23 Lam Research Corporation Systems and methods for UV-based suppression of plasma instability
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030224544A1 (en) * 2001-12-06 2003-12-04 Shipley Company, L.L.C. Test method
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US20040096593A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20070105401A1 (en) * 2005-11-09 2007-05-10 Tokyo Electron Limited Multi-step system and method for curing a dielectric film

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001288954A1 (en) * 2000-09-13 2002-03-26 Shipley Company, L.L.C. Electronic device manufacture
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
JP3726071B2 (ja) * 2002-06-05 2005-12-14 東京エレクトロン株式会社 熱処理方法
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US6897162B2 (en) * 2003-10-20 2005-05-24 Wafermasters, Inc. Integrated ashing and implant annealing method
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US20070173071A1 (en) * 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
JP2007214156A (ja) * 2006-02-07 2007-08-23 Yatabe Hitoo 半導体デバイス
JP2007324170A (ja) * 2006-05-30 2007-12-13 Yoshimi Shiotani 照射装置及び照射装置を用いた半導体製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US20030224544A1 (en) * 2001-12-06 2003-12-04 Shipley Company, L.L.C. Test method
US20040096593A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20040096672A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20070105401A1 (en) * 2005-11-09 2007-05-10 Tokyo Electron Limited Multi-step system and method for curing a dielectric film

Also Published As

Publication number Publication date
KR101538531B1 (ko) 2015-07-21
CN102789975A (zh) 2012-11-21
JP5490024B2 (ja) 2014-05-14
CN101960556B (zh) 2013-09-18
CN101960556A (zh) 2011-01-26
CN102789975B (zh) 2015-10-14
TW200949941A (en) 2009-12-01
TWI421939B (zh) 2014-01-01
WO2009111473A2 (fr) 2009-09-11
JP2014007416A (ja) 2014-01-16
DE112009000518T5 (de) 2011-05-05
KR20120041641A (ko) 2012-05-02
JP2011514678A (ja) 2011-05-06

Similar Documents

Publication Publication Date Title
WO2009111473A3 (fr) Procédé de traitement thermique d’une pellicule diélectrique poreuse à faible constante diélectrique
WO2007055849A3 (fr) Systeme multi-etapes et procede de prise d'un film dielectrique
WO2010022839A3 (fr) Filtre de pureté spectrale et appareil lithographique
WO2007059294A3 (fr) Procede pour traitement pulse aux uv de revetements sur bois
EP1845132B8 (fr) Composition de formation d'un film contenant du silicone, film contenant du silicone, substrat porteur de film contenant du silicone et procédé de placement de motif
WO2010033469A3 (fr) Système de traitement de matériaux diélectriques et procédé de fonctionnement
WO2012048041A3 (fr) Traitement par amine de films de silicium-nitrure-hydrure
SG150425A1 (en) Solar control low-emissivity coatings
TW200731408A (en) UV curing of low-k porous dielectrics
WO2007130909A3 (fr) Traitement thermique assisté par ultraviolet
WO2010150023A3 (fr) Procédé d'impression
WO2008011447A3 (fr) Appareil et procédé de réduction de la consommation d'énergie d'un modem câble
EP2199428A3 (fr) Procédé pour l'élimination du carbone d'un matériau organosilicate
WO2008139379A3 (fr) Détecteur de spectre et son procédé de fabrication
TW200618111A (en) Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
TW200745764A (en) Coating compositions for photolithography
TW201129667A (en) Fabricating method of film adhesive, adhesive sheet, semiconductor device and fabricating method thereof
BRPI0818775A2 (pt) Método de fabricação de um revestimento de sílica antirreflexo, produto resultante, e dispositivo fotovoltaico que o inclui
WO2010065459A3 (fr) Procédé de gravure de matériau diélectrique d'organosiloxane
WO2009006010A3 (fr) Procédé de formation d'un motif sur un substrat
WO2009148859A3 (fr) Procédé et appareillage pour durcissement aux uv avec de la vapeur d'eau
TW200703632A (en) Photoelectric conversion device and manufacturing method thereof
WO2010009716A3 (fr) Dispositif émettant un rayonnement et procédé de fabrication d'un dispositif émettant un rayonnement
WO2011028590A3 (fr) Hydrogels pour la formation de motif
WO2009114244A3 (fr) Amélioration d'irrégularité de largeur de ligne par un plasma de gaz noble

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980107844.3

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09717188

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2010549819

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1120090005187

Country of ref document: DE

ENP Entry into the national phase

Ref document number: 20107022355

Country of ref document: KR

Kind code of ref document: A

RET De translation (de og part 6b)

Ref document number: 112009000518

Country of ref document: DE

Date of ref document: 20110505

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 09717188

Country of ref document: EP

Kind code of ref document: A2