WO2009125143A3 - Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat - Google Patents

Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat Download PDF

Info

Publication number
WO2009125143A3
WO2009125143A3 PCT/FR2009/050524 FR2009050524W WO2009125143A3 WO 2009125143 A3 WO2009125143 A3 WO 2009125143A3 FR 2009050524 W FR2009050524 W FR 2009050524W WO 2009125143 A3 WO2009125143 A3 WO 2009125143A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
metal
forming
depositing
priming layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2009/050524
Other languages
English (en)
Other versions
WO2009125143A2 (fr
Inventor
Clément BARRIERE
Pierre Fau
Bruno Chaudret
Olivier Margeat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
STMicroelectronics Tours SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, STMicroelectronics Tours SAS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to CN200980111161.5A priority Critical patent/CN101981663B/zh
Priority to EP09729442A priority patent/EP2272085A2/fr
Priority to US12/935,186 priority patent/US9093381B2/en
Publication of WO2009125143A2 publication Critical patent/WO2009125143A2/fr
Publication of WO2009125143A3 publication Critical patent/WO2009125143A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/168—Control of temperature, e.g. temperature of bath, substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1682—Control of atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C23C18/1692—Heat-treatment
    • C23C18/1696—Control of atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C23C18/1692—Heat-treatment
    • C23C18/1698—Control of temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886—Multistep pretreatment
    • C23C18/1889—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073—Multistep pretreatment
    • C23C18/208—Multistep pretreatment with use of metal first
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne un procédé de formation, sur un substrat (5), d'une couche d'amorçage permettant un dépôt ultérieur d'une couche d'un métal, consistant à immerger le substrat dans un bain (7) comprenant un matériau de la famille des éthoxysilanes ou des siloxanes et un amidinate de cuivre ou de nickel.
PCT/FR2009/050524 2008-03-28 2009-03-30 Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat Ceased WO2009125143A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200980111161.5A CN101981663B (zh) 2008-03-28 2009-03-30 用于在底材上形成沉积金属的底层的方法和向待涂敷有金属层的底材施用的液体预处理剂
EP09729442A EP2272085A2 (fr) 2008-03-28 2009-03-30 Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat
US12/935,186 US9093381B2 (en) 2008-03-28 2009-03-30 Method for forming a seed layer for the deposition of a metal on a substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0852045 2008-03-28
FR0852045A FR2929449A1 (fr) 2008-03-28 2008-03-28 Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat

Publications (2)

Publication Number Publication Date
WO2009125143A2 WO2009125143A2 (fr) 2009-10-15
WO2009125143A3 true WO2009125143A3 (fr) 2009-12-10

Family

ID=39957941

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2009/050524 Ceased WO2009125143A2 (fr) 2008-03-28 2009-03-30 Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat

Country Status (5)

Country Link
US (1) US9093381B2 (fr)
EP (1) EP2272085A2 (fr)
CN (1) CN101981663B (fr)
FR (1) FR2929449A1 (fr)
WO (1) WO2009125143A2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598465B2 (en) * 2011-01-27 2013-12-03 Northrop Grumman Systems Corporation Hermetic circuit ring for BCB WSA circuits
US9295163B2 (en) 2013-05-30 2016-03-22 Dyi-chung Hu Method of making a circuit board structure with embedded fine-pitch wires
EP3409814A4 (fr) * 2016-01-29 2019-08-28 JCU Corporation Procédé de formation d'un circuit sur un substrat
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
US12200875B2 (en) 2018-09-20 2025-01-14 Industrial Technology Research Institute Copper metallization for through-glass vias on thin glass
US11760682B2 (en) 2019-02-21 2023-09-19 Corning Incorporated Glass or glass ceramic articles with copper-metallized through holes and processes for making the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050281952A1 (en) * 2004-06-16 2005-12-22 Chongying Xu Copper (i) compounds useful as deposition precursors of copper thin films
WO2006012052A2 (fr) * 2004-06-25 2006-02-02 Arkema, Inc. Precurseurs utilises pour le depot chimique en phase vapeur contenant des ligands amidinates
US20060141155A1 (en) * 2002-11-15 2006-06-29 Havard University Atomic layer deposition using metal amidinates

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070235876A1 (en) * 2006-03-30 2007-10-11 Michael Goldstein Method of forming an atomic layer thin film out of the liquid phase
US7687911B2 (en) * 2006-09-07 2010-03-30 Intel Corporation Silicon-alloy based barrier layers for integrated circuit metal interconnects
US20080160204A1 (en) * 2006-12-28 2008-07-03 Lavoie Adrien R Spontaneous copper seed deposition process for metal interconnects

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060141155A1 (en) * 2002-11-15 2006-06-29 Havard University Atomic layer deposition using metal amidinates
US20050281952A1 (en) * 2004-06-16 2005-12-22 Chongying Xu Copper (i) compounds useful as deposition precursors of copper thin films
WO2006012052A2 (fr) * 2004-06-25 2006-02-02 Arkema, Inc. Precurseurs utilises pour le depot chimique en phase vapeur contenant des ligands amidinates

Also Published As

Publication number Publication date
CN101981663A (zh) 2011-02-23
FR2929449A1 (fr) 2009-10-02
WO2009125143A2 (fr) 2009-10-15
EP2272085A2 (fr) 2011-01-12
US9093381B2 (en) 2015-07-28
CN101981663B (zh) 2012-09-05
US20110117271A1 (en) 2011-05-19

Similar Documents

Publication Publication Date Title
WO2010025068A3 (fr) Dépôt de cobalt sur des surfaces barrières
EP1857570A3 (fr) Procédé pour la formation d'une structure stratifiée à base de nickel sur un substrat en alliage de magnésium, un article en alliage de magnésium à surface traitée fabriqué à partir de celle-ci et une solution de nettoyage et une solution de traitement de surface utilisée à ces fins
TW200717709A (en) A method for forming a ruthenium metal layer on a patterned substrate
DE602007005017D1 (de) Verfahren für leicht zu reinigende substrate und artikel daraus
WO2009148634A3 (fr) Conversion de films métalliques juste continus en substrats particulaires de grande taille pour la fluorescence améliorée par métal
WO2008103668A3 (fr) Compositions de revêtement à base de silane, systèmes de revêtement et procédés
WO2010075487A3 (fr) Article catalytique en palladium pour petits moteurs et procédé de fabrication associé
EP2319643A4 (fr) Dispersion à base de cuivre métallique, procédé de production de dispersion à base de cuivre métallique, électrode, motif de câblage, et film de revêtement formé au moyen de dispersion à base de cuivre métallique, article décoratif et article antimicrobien recouvert du film de revêtement, et procédés de production de l article décoratif et de l article antimicrobien
EP1260607A3 (fr) Procédé de placage
ATE491227T1 (de) Verfahren zur herstellung von interkonnektverbindungen für halbleiterkomponenten
EP2080818A3 (fr) Procédés de suppression d'un stabilisateur à partir d'une nanoparticule de métal utilisant un déstabilisateur
PL1883714T3 (pl) Zespolone tworzywo warstwowe do łożysk ślizgowych, zastosowanie i sposób wytwarzania
WO2013113810A3 (fr) Bain de dépôt autocatalytique de nickel
WO2011056698A3 (fr) Plaquage par immersion d'étain-argent dans une fabrication de dispositifs électroniques
ATE553499T1 (de) Verfahren zur herstellung einer nanostruktur auf einem vorgeätzten substrat
DE502008001789D1 (de) Edelmetallhaltige Schichtfolge für dekorative Artikel
TW200644164A (en) Method for forming a barrier/seed layer for copper metallization
EP2017373A3 (fr) Procédé grande vitesse pour le placage de palladium et d'alliages de palladium
TW200714732A (en) Metal duplex and method
CA2751684A1 (fr) Bain de placage d'alliage contenant de l'argent et methode de placage electrolytique a base dudit bain
WO2006033731A3 (fr) Depot de cuivre en couche atomique au moyen de tensioactifs
TWI265204B (en) Method for coating substrates in inline installations
WO2010081959A3 (fr) Complexes organometalliques pour le depot chimique en phase vapeur de platine
WO2009059915A3 (fr) Couche de nickel contenant de l'or
WO2009134925A3 (fr) Procédé pour former des matériaux de cobalt et de siliciure de cobalt dans des applications de contact de cuivre

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980111161.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09729442

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009729442

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12935186

Country of ref document: US