WO2009139603A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2009139603A3
WO2009139603A3 PCT/KR2009/002596 KR2009002596W WO2009139603A3 WO 2009139603 A3 WO2009139603 A3 WO 2009139603A3 KR 2009002596 W KR2009002596 W KR 2009002596W WO 2009139603 A3 WO2009139603 A3 WO 2009139603A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive
layer
emitting device
semiconductor light
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/002596
Other languages
English (en)
French (fr)
Other versions
WO2009139603A2 (ko
Inventor
임우식
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to CN2009801176605A priority Critical patent/CN102027606B/zh
Priority to US12/992,950 priority patent/US8530919B2/en
Priority to EP09746782.3A priority patent/EP2290709B1/en
Publication of WO2009139603A2 publication Critical patent/WO2009139603A2/ko
Publication of WO2009139603A3 publication Critical patent/WO2009139603A3/ko
Anticipated expiration legal-status Critical
Priority to US13/963,724 priority patent/US8766308B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Led Devices (AREA)

Abstract

실시 예는 반도체 발광소자에 관한 것이다. 실시 예에 따른 반도체 발광소자는 제1도전형 반도체층; 상기 제1도전형 반도체층 아래에 활성층; 상기 활성층 아래에 제2도전형 반도체층; 상기 제2도전형 반도체층 아래에 제2전극층; 및 상기 제1도전형 반도체층, 상기 활성층 및 상기 제2도전형 반도체층 중 적어도 2개의 층 둘레에 절연층을 포함한다.
PCT/KR2009/002596 2008-05-16 2009-05-15 반도체 발광소자 Ceased WO2009139603A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2009801176605A CN102027606B (zh) 2008-05-16 2009-05-15 半导体发光器件
US12/992,950 US8530919B2 (en) 2008-05-16 2009-05-15 Semi-conductor light-emitting device
EP09746782.3A EP2290709B1 (en) 2008-05-16 2009-05-15 Semiconductor light-emitting device
US13/963,724 US8766308B2 (en) 2008-05-16 2013-08-09 Semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0045740 2008-05-16
KR1020080045740A KR20090119596A (ko) 2008-05-16 2008-05-16 반도체 발광소자 및 그 제조방법

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/992,950 A-371-Of-International US8530919B2 (en) 2008-05-16 2009-05-15 Semi-conductor light-emitting device
US13/963,724 Continuation US8766308B2 (en) 2008-05-16 2013-08-09 Semiconductor light-emitting device

Publications (2)

Publication Number Publication Date
WO2009139603A2 WO2009139603A2 (ko) 2009-11-19
WO2009139603A3 true WO2009139603A3 (ko) 2010-02-18

Family

ID=41319183

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002596 Ceased WO2009139603A2 (ko) 2008-05-16 2009-05-15 반도체 발광소자

Country Status (5)

Country Link
US (2) US8530919B2 (ko)
EP (1) EP2290709B1 (ko)
KR (1) KR20090119596A (ko)
CN (1) CN102027606B (ko)
WO (1) WO2009139603A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101039896B1 (ko) * 2009-12-03 2011-06-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100999798B1 (ko) 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20110123118A (ko) * 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
KR101799451B1 (ko) * 2011-06-02 2017-11-20 엘지이노텍 주식회사 발광 소자
KR102092911B1 (ko) * 2014-03-28 2020-03-24 동우 화인켐 주식회사 반도체 발광층 소프트 에칭액 조성물, 발광소자 및 디스플레이 소자
KR101771461B1 (ko) * 2015-04-24 2017-08-25 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
KR101771463B1 (ko) * 2016-07-15 2017-08-25 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR102271031B1 (ko) * 2019-10-15 2021-06-30 (재)한국나노기술원 절연체 전자친화도를 이용한 고효율 마이크로 led 장치
CN110911536A (zh) * 2019-12-13 2020-03-24 深圳第三代半导体研究院 一种Micro-LED芯片及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
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KR20060035424A (ko) * 2004-10-22 2006-04-26 서울옵토디바이스주식회사 ＧａＮ계 화합물 반도체 발광 소자 및 그 제조 방법
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
KR20080018084A (ko) * 2006-08-23 2008-02-27 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법

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JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
CN1848564A (zh) * 2001-03-09 2006-10-18 精工爱普生株式会社 发光元件的制造方法、半导体激光器及其制造方法
US6900069B2 (en) * 2001-03-09 2005-05-31 Seiko Epson Corporation Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device
KR100909733B1 (ko) * 2002-01-28 2009-07-29 니치아 카가쿠 고교 가부시키가이샤 지지기판을 갖는 질화물 반도체소자 및 그 제조방법
JP2006100500A (ja) 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
US7964884B2 (en) * 2004-10-22 2011-06-21 Seoul Opto Device Co., Ltd. GaN compound semiconductor light emitting element and method of manufacturing the same
KR101154744B1 (ko) 2005-08-01 2012-06-08 엘지이노텍 주식회사 질화물 발광 소자 및 그 제조 방법
JP5016808B2 (ja) 2005-11-08 2012-09-05 ローム株式会社 窒化物半導体発光素子及び窒化物半導体発光素子製造方法
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KR101371511B1 (ko) 2007-10-04 2014-03-11 엘지이노텍 주식회사 수직형 발광 소자
WO2009117845A1 (en) 2008-03-25 2009-10-01 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting device with double-sided passivation
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060035424A (ko) * 2004-10-22 2006-04-26 서울옵토디바이스주식회사 ＧａＮ계 화합물 반도체 발광 소자 및 그 제조 방법
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
KR20080018084A (ko) * 2006-08-23 2008-02-27 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법

Also Published As

Publication number Publication date
EP2290709B1 (en) 2016-08-17
US8530919B2 (en) 2013-09-10
US20130320389A1 (en) 2013-12-05
US20110062480A1 (en) 2011-03-17
WO2009139603A2 (ko) 2009-11-19
US8766308B2 (en) 2014-07-01
KR20090119596A (ko) 2009-11-19
CN102027606A (zh) 2011-04-20
EP2290709A2 (en) 2011-03-02
CN102027606B (zh) 2013-04-24
EP2290709A4 (en) 2012-10-10

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