WO2009145465A3 - 발광 소자 및 그 제조방법 - Google Patents

발광 소자 및 그 제조방법 Download PDF

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Publication number
WO2009145465A3
WO2009145465A3 PCT/KR2009/001679 KR2009001679W WO2009145465A3 WO 2009145465 A3 WO2009145465 A3 WO 2009145465A3 KR 2009001679 W KR2009001679 W KR 2009001679W WO 2009145465 A3 WO2009145465 A3 WO 2009145465A3
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WO
WIPO (PCT)
Prior art keywords
light emitting
ohmic contact
emitting device
layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/001679
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English (en)
French (fr)
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WO2009145465A2 (ko
Inventor
송준오
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US12/936,071 priority Critical patent/US8791481B2/en
Priority to CN2009801189944A priority patent/CN102067341B/zh
Priority to JP2011502855A priority patent/JP2011517085A/ja
Priority to EP09754930.7A priority patent/EP2262011B1/en
Publication of WO2009145465A2 publication Critical patent/WO2009145465A2/ko
Publication of WO2009145465A3 publication Critical patent/WO2009145465A3/ko
Anticipated expiration legal-status Critical
Priority to US14/312,495 priority patent/US9735327B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)

Abstract

실시예에 따른 발광 소자는 지지 기판; 상기 지지 기판 상에 반사성 오믹 접촉층; 상기 반사성 오믹 접촉층 상에 공정 도우미 영역 및 상기 공정 도우미 영역에 의해 구분되는 오믹 접촉 영역들을 포함하는 기능성 복합층; 및 상기 각각의 오믹 접촉 영역들 상에 제2 도전형의 반도체층, 활성층, 및 제1 도전형의 반도체층을 포함하는 발광 반도체층들을 포함한다.
PCT/KR2009/001679 2008-04-01 2009-04-01 발광 소자 및 그 제조방법 Ceased WO2009145465A2 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/936,071 US8791481B2 (en) 2008-04-01 2009-04-01 Light emitting device and manufacturing method for same
CN2009801189944A CN102067341B (zh) 2008-04-01 2009-04-01 发光器件和用于制造发光器件的方法
JP2011502855A JP2011517085A (ja) 2008-04-01 2009-04-01 発光素子及びその製造方法
EP09754930.7A EP2262011B1 (en) 2008-04-01 2009-04-01 Light emitting device
US14/312,495 US9735327B2 (en) 2008-04-01 2014-06-23 Light emitting device and manufacturing method for same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0030106 2008-04-01
KR1020080030106A KR101438818B1 (ko) 2008-04-01 2008-04-01 발광다이오드 소자

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/936,071 A-371-Of-International US8791481B2 (en) 2008-04-01 2009-04-01 Light emitting device and manufacturing method for same
US14/312,495 Continuation US9735327B2 (en) 2008-04-01 2014-06-23 Light emitting device and manufacturing method for same

Publications (2)

Publication Number Publication Date
WO2009145465A2 WO2009145465A2 (ko) 2009-12-03
WO2009145465A3 true WO2009145465A3 (ko) 2010-01-21

Family

ID=41377717

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001679 Ceased WO2009145465A2 (ko) 2008-04-01 2009-04-01 발광 소자 및 그 제조방법

Country Status (6)

Country Link
US (2) US8791481B2 (ko)
EP (1) EP2262011B1 (ko)
JP (1) JP2011517085A (ko)
KR (1) KR101438818B1 (ko)
CN (1) CN102067341B (ko)
WO (1) WO2009145465A2 (ko)

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KR101470020B1 (ko) 2008-03-18 2014-12-10 엘지이노텍 주식회사 샌드위치 구조의 웨이퍼 결합 및 포톤 빔을 이용한 단결정 반도체 박막 전이
KR20100008123A (ko) 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
KR100999726B1 (ko) 2009-05-04 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101072034B1 (ko) * 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2333852B1 (en) * 2009-12-09 2019-03-27 LG Innotek Co., Ltd. Light emitting device and light emitting package
KR101181000B1 (ko) * 2009-12-29 2012-09-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101039904B1 (ko) 2010-01-15 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR20110085609A (ko) 2010-01-21 2011-07-27 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR100999779B1 (ko) 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR100986523B1 (ko) 2010-02-08 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986318B1 (ko) * 2010-02-09 2010-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100999798B1 (ko) 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100969127B1 (ko) * 2010-02-18 2010-07-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101643410B1 (ko) * 2010-03-08 2016-07-28 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5725927B2 (ja) * 2010-05-18 2015-05-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 高効率発光ダイオード及びその製造方法
KR101115537B1 (ko) * 2010-05-18 2012-02-29 서울옵토디바이스주식회사 고효율 반도체 발광소자
KR101114191B1 (ko) 2010-09-17 2012-03-13 엘지이노텍 주식회사 발광소자
KR101707118B1 (ko) * 2010-10-19 2017-02-15 엘지이노텍 주식회사 발광소자 및 그 발광 소자의 제조 방법
KR101591991B1 (ko) 2010-12-02 2016-02-05 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
KR101781438B1 (ko) * 2011-06-14 2017-09-25 삼성전자주식회사 반도체 발광소자의 제조방법
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KR101286211B1 (ko) * 2012-02-16 2013-07-15 고려대학교 산학협력단 발광 소자 제조 방법 및 이를 이용하여 제조된 발광 소자
JP6068091B2 (ja) * 2012-10-24 2017-01-25 スタンレー電気株式会社 発光素子
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Also Published As

Publication number Publication date
CN102067341A (zh) 2011-05-18
EP2262011B1 (en) 2019-06-19
WO2009145465A2 (ko) 2009-12-03
US20140306254A1 (en) 2014-10-16
KR20090104931A (ko) 2009-10-07
US9735327B2 (en) 2017-08-15
JP2011517085A (ja) 2011-05-26
EP2262011A4 (en) 2014-01-22
KR101438818B1 (ko) 2014-09-05
US8791481B2 (en) 2014-07-29
CN102067341B (zh) 2013-09-25
EP2262011A2 (en) 2010-12-15
US20110168971A1 (en) 2011-07-14

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