WO2010062073A2 - Appareil de traitement d'informations magnétiques et procédé de fabrication correspondant - Google Patents

Appareil de traitement d'informations magnétiques et procédé de fabrication correspondant Download PDF

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Publication number
WO2010062073A2
WO2010062073A2 PCT/KR2009/006715 KR2009006715W WO2010062073A2 WO 2010062073 A2 WO2010062073 A2 WO 2010062073A2 KR 2009006715 W KR2009006715 W KR 2009006715W WO 2010062073 A2 WO2010062073 A2 WO 2010062073A2
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WIPO (PCT)
Prior art keywords
magnetic
substrate
layer
information processing
crystal
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Ceased
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PCT/KR2009/006715
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English (en)
Korean (ko)
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WO2010062073A3 (fr
Inventor
이상훈
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Korea University Research and Business Foundation
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Korea University Research and Business Foundation
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Publication of WO2010062073A2 publication Critical patent/WO2010062073A2/fr
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to an information processing apparatus and a manufacturing method thereof, and more particularly, to a magnetic information processing apparatus and a manufacturing method thereof.
  • the conventional electronic memory device is a binary system method that stores two logic states "0" and "1" in the basic "bit" of information storage.
  • the method of storing two different charge states is used as the information storage principle of a binary system.
  • the method of storing magnetic states along two magnetization directions is binary. (binary) It is used as information storage principle of system.
  • the density of information storage is determined by the density of "bits" storing one piece of information, so the size of each "bit” device determines the overall capacity of information storage.
  • a way to increase the capacity of information storage in binary systems is to reduce the size of the elements that make up one bit ".
  • MRAM Magnetic Random Access Memory
  • MRAM Magnetic Random Access Memory
  • FIG. 1 schematically illustrates a spin valve structure, which is an essential part of a conventional MRAM device, using a relationship between a magnetic field and a resistance.
  • a conventional MRAM device includes a hard magnetic layer 105 formed below the space layer 103 based on the space layer 103 to perform a sensing role, and a soft magnetic layer 101 formed on the rising side to perform a storage role. It is configured by.
  • the conventional MRAM device uses a Giant MagnetoResistance (GMR) phenomenon in which the resistance of the two magnetic layers 101 and 105 with the nonmagnetic layer 103 interposed therebetween is different than that of the same case. Based on the structure, it has a structure composed of multiple magnetic layers.
  • GMR Giant MagnetoResistance
  • the magnetization direction of the soft magnetic layer 101 is recorded by flowing a current through a word line, and the recorded magnetization direction is read by sensing a change in resistance according to the magnetization directions of the two magnetic layers 101 and 105.
  • the conventional MRAM device has a complicated structure of multiple layers by adding a plurality of magnetic layers constituting the spin valve and a layer that performs a word line and a read line, thereby lowering process difficulty and productivity. There is.
  • the magnetic multilayer structure has a complicated structure, and the first magnetization direction 110 and the fourth magnetization direction 140 are in a degenerate state having the same resistance value, and the second magnetization direction 120 In the degenerate state in which the states of the third magnetization direction 130 and the third magnetization direction 130 have the same resistance value, there is a complicated problem of writing and reading information.
  • the information that can be stored in one cell is 1-bit data representing "0" and "1", and there is a problem in that the amount of stored information is smaller than that of a complicated structure.
  • an object of the present invention is to increase the information processing capacity and the processing speed by allowing a magnetic body to have multiple Hall resistance states.
  • an object of the present invention is to reduce the thickness of the magnetic information processing apparatus and to improve the efficiency of the process.
  • Magnetic information processing apparatus for solving the above problems includes a magnetic body layer formed on a substrate and a substrate, including a magnetic material having a multi-axis magnetic anisotropy, the magnetic material includes a crystal structure Therefore, the crystal plane of the magnetic body and the plane of the magnetic layer do not coincide.
  • the magnetic body may be a ferromagnetic body.
  • the substrate may include a crystal structure, and the crystal surface of the substrate may not coincide with the surface of the substrate.
  • the magnetic information processing apparatus may further include magnetic field applying means for applying a magnetic field to the magnetic body.
  • the magnetic information processing apparatus may further include a resistance measuring means for measuring the resistance value of the magnetic body.
  • a method of manufacturing a magnetic information processing apparatus including forming a substrate including a crystal structure and forming a magnetic layer including a magnetic material including a crystal structure on the substrate and having a multilayer magnetic anisotropy characteristic. And the substrate is formed such that the crystal surface of the substrate does not coincide with the surface of the substrate.
  • the magnetic body may be a ferromagnetic body.
  • a method of manufacturing a magnetic information processing apparatus includes forming a substrate and forming a magnetic layer including a magnetic material having multilayer magnetic anisotropy on the substrate, wherein the magnetic material has a crystal structure. It is formed so that the crystal surface of the magnetic body and the surface of the magnetic layer do not coincide.
  • the magnetic body may be a ferromagnetic body.
  • the present invention it is possible to provide a magnetic information processing apparatus having improved information processing capacity and processing speed, and to reduce the thickness of the magnetic information processing apparatus and to improve the efficiency of the process.
  • FIG. 1 schematically illustrates a spin valve structure, which is an essential part of a conventional MRAM device, using a relationship between a magnetic field and a resistance.
  • FIG. 2 is a diagram illustrating four magnetization directions at an angle at which magnetic energy is minimum in a biaxial magnetic anisotropic magnetic body.
  • FIG. 3 is a history of changing the value of Planar Hall Resistance (PHR) according to the magnetization direction when scanning an external magnetic field in a magnetic single domain state when the crystal plane of the biaxial magnetic anisotropic magnetic material coincides with the plane of the biaxial magnetic anisotropic magnetic layer.
  • PHR Planar Hall Resistance
  • FIG. 4 is a view for explaining an anomalous hall effect (AHE) when the crystal plane of the magnetic body does not coincide with the plane of the magnetic layer.
  • AHE anomalous hall effect
  • FIG. 5 shows four magnetization states when the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer do not coincide with each other (when the plane hole effect of FIG. 3 and the abnormal hole effect of FIG. 4 are combined). Hall effect history curve for.
  • Fig. 6 is a view for explaining the hole resistance (a) and the hole effect (b) when the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer do not coincide with each other according to the present invention.
  • FIG. 7 is a view for explaining an experimental value for the Hall resistance value according to the inclination angle formed between the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer according to the present invention.
  • FIG. 8 is a view showing an example of a magnetic field applying method for having four different hole resistance values when the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer do not coincide with each other according to the present invention.
  • FIG. 9 is a diagram for explaining a magnetic information processing device according to the present invention.
  • FIG. 10 is a view for explaining an embodiment of a method of manufacturing a magnetic information processing device according to the present invention.
  • FIG. 11 is a view for explaining another embodiment of the manufacturing method of the magnetic information processing device according to the present invention.
  • components expressed as means for performing the functions described in the detailed description include all types of software including, for example, a combination of circuit elements or firmware / microcode, etc. that perform the functions. It is intended to include all methods of performing a function which are combined with appropriate circuitry for executing the software to perform the function.
  • the invention, as defined by these claims, is equivalent to what is understood from this specification, as any means capable of providing such functionality, as the functionality provided by the various enumerated means are combined, and in any manner required by the claims. It should be understood that.
  • the present invention relates to a magnetic information processing apparatus and a manufacturing method thereof, wherein the magnetic information processing apparatus includes an information storage device or a logic processing device including a random access memory (RAM) or the like.
  • the magnetic information processing apparatus includes an information storage device or a logic processing device including a random access memory (RAM) or the like.
  • the magnetic body in the present invention includes a crystal structure, and means a magnetic body having multiaxial (biaxial, triaxial, etc.) magnetic anisotropy.
  • Magnetic material includes ferromagnetic material, and may include Fe, Co, Ni, Cr, permalloy, heusler alloy, gallium manganese arsenide (GaMnAs), germanium manganese (GeMn), and the magnetic material may be a single magnetic domain. Or a plurality of magnetic domains.
  • the biaxial magnetic anisotropy magnetic body may have a magnetization direction in four directions in a plane, and when the biaxial magnetic anisotropy has three or more axes, it may have a multiple magnetization direction.
  • FIG. 2 is a diagram illustrating four magnetization directions at an angle at which magnetic energy is minimum in a biaxial magnetic anisotropic magnetic body.
  • four arrow directions indicate four magnetization directions.
  • FIG. 3 is a history of changing the value of Planar Hall Resistance (PHR) according to the magnetization direction when scanning an external magnetic field in a magnetic single domain state when the crystal plane of the biaxial magnetic anisotropic magnetic material coincides with the plane of the biaxial magnetic anisotropic magnetic layer.
  • PHR Planar Hall Resistance
  • information can be stored in two magnetization states 320 and 330 having high resistance values and two magnetization states 310 and 340 having low resistance values, thereby storing four types of information. Can be.
  • the effect corresponding to four combinations obtained in the spin valve structure of the conventional magnetic triple layer structure shown in FIG. 1 can be realized as a single magnetic layer. .
  • the resistance values of the first magnetization state 310 and the fourth magnetization state 340 are the same.
  • the resistance values of the second magnetization state 320 and the third magnetization state 330 are the same, in order to read the information stored in the four states, it is necessary to undergo a complicated process as in the conventional spin valve structure. have.
  • the crystal plane of the biaxial magnetic anisotropic magnetic body and the film plane of the biaxial magnetic anisotropic magnetic layer are inclined to form the magnetic body so that both surfaces thereof do not coincide.
  • This combines the Planer Hall Effect (PHE) and the Anomalous Hall Effect (AHE), resulting in separate Hall resistance values for each of the four magnetization states. And writing is effective.
  • PHE Planer Hall Effect
  • AHE Anomalous Hall Effect
  • FIG. 4 is a view for explaining an anomalous hall effect (AHE) when the crystal plane of the magnetic body does not coincide with the plane of the magnetic layer.
  • AHE anomalous hall effect
  • the magnetization states exist in the crystal plane in a single domain state, and because the crystal planes of the magnetic bodies and the planes of the magnetic layers do not coincide, different abnormal holes are caused by the inclined crystal planes when switching to another magnetization state.
  • the states 410 and 420 having effect values are obtained.
  • FIG. 5 shows four magnetization states when the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer do not coincide with each other (when the plane hole effect of FIG. 3 and the abnormal hole effect of FIG. 4 are combined). Hall effect history curve for.
  • the magnetization states 510, 520, 530, and 540 of the four resistance values R1, R2, R3, and R4 are different from each other through the hysteresis curve of the Hall effect when the magnetization transition occurs in the crystal plane of the magnetic body. It can be seen that the state.
  • the Hall resistance value according to the transition between the four magnetization states of the magnetic material in which the crystal plane of the biaxial magnetic anisotropic magnetic layer and the plane of the biaxial magnetic anisotropic magnetic layer do not coincide with each other are different. Can be stored. Due to the Hall resistance values according to the four different magnetization states, compared to the magnetic spin valve structure, the stored information can be read accurately and quickly.
  • FIG. 6 illustrates the planar hole effect and abnormal hole effect caused by the horizontal and vertical components of the magnetic body surface of magnetization when the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer do not coincide with each other according to the present invention. It is for the drawing.
  • the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer do not coincide with each other, and both surfaces are inclined at an angle ⁇ , and magnetization is performed on the crystal plane.
  • the magnetization consists of the horizontal and vertical components of the magnetic surface and shows four magnetization states (I, II, III, IV).
  • a planar hall resistance (PHR) and anomalous hall resistance (AHR) are combined according to a combination of horizontal and vertical components of magnetization shown in FIG.
  • Four Hall resistance states (I, II, III, IV) are shown for the total Hall resistance.
  • FIG. 7 is a view for explaining an experimental value for the Hall resistance value according to the inclination angle formed between the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer according to the present invention.
  • the left view shows a case where the inclination angle ⁇ formed between the crystal plane of the biaxial magnetic anisotropic magnetic layer and the plane of the biaxial magnetic anisotropic magnetic layer is 0 degrees
  • the right view shows the crystal plane of the biaxial magnetic anisotropic magnetic material and the biaxial magnetic anisotropy.
  • 5 is a view illustrating a case where the inclination angle ⁇ formed by the surface of the magnetic layer is 5 degrees.
  • the angle ⁇ When the angle ⁇ is 0 degrees, it has only two Hall resistance values, whereas when the angle ⁇ is 5 degrees, that is, when the crystal plane of the biaxial magnetic anisotropic magnetic material does not coincide with the plane of the biaxial magnetic anisotropic magnetic layer, 4 It can be seen that two different Hall resistance values are measured.
  • FIG. 8 is a view showing an example of a magnetic field applying method for having four different hole resistance values when the crystal plane of the biaxial magnetic anisotropic magnetic body and the plane of the biaxial magnetic anisotropic magnetic layer do not coincide with each other according to the present invention.
  • four different Hall resistance values R1, R2, R3, and R4 may be stored by using a pulse sequence using the current I.
  • the current may be divided into a high current and a low current, and in addition to this, a middle current may be added according to an embodiment.
  • each domain is magnetized in the direction of the crystal plane of magnetic easy axes among the four magnetization directions, and the total Hall resistance value of the magnetic state is as shown in [Equation 1] below. It can be expressed as the sum of and an abnormal hall resistance value.
  • Equation 1 the first term represents the resistance due to the abnormal Hall effect, and the second term represents the resistance due to the planar Hall effect.
  • k represents the difference in the specific resistance value when the direction of the current is perpendicular to the direction perpendicular to the magnetization direction
  • t represents the thickness of the sample
  • Rs represents an abnormal Hall constant
  • ⁇ is the magnetization is on the film plane It represents an angle formed with the vertical direction
  • ⁇ represents an angle formed by the magnetization with the current direction in the thin film sample plane.
  • the resistance values of the first magnetization state 310 and the fourth magnetization state 340 of the four states are the same, and the resistance values of the second magnetization state 320 and the third magnetization state 330 are the same.
  • the resistance value is the same.
  • the biaxial magnetic anisotropic magnetic body has four resistance states respectively separated in four magnetization directions.
  • the resistance R in the first term and the second term of [Equation 2] represents the measurement of the resistance value of the magnetic body when it is perpendicular or horizontal to the current direction.
  • the magnetic body having a multi-axis magnetic anisotropy of three or more axes is more apparent to those skilled in the art than the magnetic material having a biaxial magnetic anisotropy, it is apparent to those skilled in the art It is included in the disclosure of the present invention.
  • a magnetic body including a plurality of magnetic domains may be combined with more resistance states than a magnetic body including a single magnetic domain, and thus, the above-described present invention may include a magnetic body including a plurality of magnetic domains.
  • Application to is included in the disclosure of the present invention.
  • FIG. 9 is a diagram for explaining a magnetic information processing device according to the present invention.
  • the magnetic information processing apparatus includes a magnetic body layer 903 formed on a substrate 901 and a substrate 901 and including a magnetic material having a multiaxial magnetic anisotropy property.
  • the magnetic material includes a crystal structure, The crystal surface of the magnetic body and the surface of the magnetic layer 903 do not coincide with each other.
  • the non-conformity here includes a case where the crystal surface of the magnetic body and the surface of the magnetic layer 903 do not coincide with each other and are inclined.
  • the magnetic body may be ferromagnetic.
  • the substrate 901 may be a substrate 901 including a crystal structure and in which the crystal surface of the substrate 901 and the surface of the substrate 901 do not coincide with each other. In such a configuration, in manufacturing the magnetic information processing apparatus according to the present invention, it is possible to more easily form the crystal surface of the magnetic body and the surface of the magnetic layer 903 when the magnetic body is grown, thereby providing a process advantage.
  • GaAs or Si may be used as the substrate 901. Meanwhile, the crystal structure included in the substrate 901 may include a poly crystal structure.
  • the magnetic information processing apparatus may further include magnetic field applying means 905 for applying a magnetic field to the magnetic material.
  • the magnetic field applying means 905 is a means for changing the value of the Hall resistance in the magnetic body by applying a magnetic field to the magnetic body.
  • the magnetic field applying means 905 may be implemented by a method of supplying a current pulse, and a current line 905 may be provided for this purpose.
  • the sequence for the current pulse can be implemented in the embodiment as described in FIG.
  • the magnetic field applying means 905 may be composed of a plurality of current lines, and is composed of an insulating layer (not shown) between the substrate 901 and the magnetic layer 903, or between the magnetic layer 903 A plurality of current lines can be provided up and down. In addition, it may further include an insulating layer (not shown) along the current line.
  • the magnetic information processing apparatus may further include a resistance measuring means 907 for measuring the resistance value of the magnetic body.
  • the resistance measuring unit 907 may measure the value of the hall resistance.
  • the resistance measuring means 907 may include a voltage applying means for applying a voltage to the magnetic material and a sensing current applying means for applying the sensing current Is.
  • FIG. 10 is a view for explaining an embodiment of a method of manufacturing a magnetic information processing device according to the present invention.
  • a method of manufacturing a magnetic information processing apparatus may include forming a substrate including a crystal structure, and forming a magnetic material including a crystal structure on the substrate and having multilayer magnetic anisotropy. Forming a magnetic layer comprising a.
  • the substrate is formed so that the crystal surface of the substrate does not coincide with the surface of the substrate.
  • the magnetic body may be a ferromagnetic body.
  • a predetermined substrate includes a crystal structure, and the crystal surface of the substrate and the surface of the substrate do not coincide, when the magnetic material is grown on the substrate, the magnetic body also coincides with the crystal surface of the magnetic body according to the crystal surface of the predetermined substrate. It is formed so as not to. As a result, in this embodiment, the magnetic material is grown on the substrate where the crystal surface of the substrate and the surface of the substrate do not coincide, whereby the process advantage is obtained.
  • the insulating film, the first and second current lines may be sequentially formed as shown in FIG. 10, and an additional protective film may be formed.
  • the substrate in FIG. 10 is located on the lower surface of the magnetic material, and additional layers such as an insulating film, first and second current lines, and the like may be formed between the substrate and the magnetic layer.
  • additional layers such as an insulating film, first and second current lines, and the like may be formed between the substrate and the magnetic layer.
  • the crystal plane of the additional layer facing the magnetic material of the additional layers should not coincide with the plane of the additional layer, and this additional layer may be interpreted to be included in the substrate.
  • FIG. 11 is a view for explaining another embodiment of the manufacturing method of the magnetic information processing device according to the present invention.
  • a method of manufacturing a magnetic information processing apparatus includes forming a substrate and forming a magnetic layer including a magnetic material having multilayer magnetic anisotropy on the substrate.
  • the magnetic body includes a crystal structure and is formed such that the crystal surface of the magnetic body does not coincide with the surface of the magnetic layer.
  • the magnetic body may be a ferromagnetic body.
  • FIG. 11 illustrates a case in which a first current line, an insulating film, and the like are additionally formed between the substrate and the magnetic layer described with reference to FIG. 10.
  • the substrate includes a general substrate and may also include an amorphous substrate.
  • the magnetic layer is formed so that the crystal surface of the magnetic body and the surface of the magnetic layer do not coincide without using the crystal surface or the like of the lower layer of the magnetic layer.
  • the substrate and the magnetic layer may be sequentially formed, and the formed magnetic layer may be cut at an angle so that the crystal surface of the magnetic body and the surface of the magnetic layer do not coincide.
  • the insulating film faces the lower portion of the magnetic layer as shown in FIG. 11, the insulating film and the magnetic layer are sequentially formed, and the formed magnetic layer is cut at an angle so that the crystal surface of the magnetic body and the surface of the magnetic layer do not coincide.
  • the crystal surface of the magnetic body and the surface of the magnetic layer do not coincide by means of various current semiconductor processes.
  • a first current line and an insulating film are sequentially formed on a substrate, a magnetic layer is formed thereon, and an insulating film, a second current line, etc. are sequentially formed on the magnetic layer.
  • a protective film can be formed.
  • the present invention is used in a magnetic information processing device and a manufacturing method thereof.

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  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
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  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

La présente invention concerne un appareil de traitement d'informations et un procédé de fabrication correspondant, et plus particulièrement, un appareil de traitement d'informations magnétiques ainsi qu'un procédé de fabrication correspondant. L'appareil de traitement d'informations magnétiques selon la présente invention comprend un substrat et une couche magnétique formée sur le substrat et contenant un aimant qui possède des propriétés d'anisotropie magnétique, lequel aimant comprend une structure cristalline. La surface cristalline de l'aimant et la surface de la couche magnétique ne correspondent pas l'une à l'autre.
PCT/KR2009/006715 2008-11-27 2009-11-16 Appareil de traitement d'informations magnétiques et procédé de fabrication correspondant Ceased WO2010062073A2 (fr)

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KR10-2008-0118761 2008-11-27

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US6469926B1 (en) * 2000-03-22 2002-10-22 Motorola, Inc. Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
JPWO2002045081A1 (ja) * 2000-11-29 2004-04-15 富士通株式会社 磁気記録媒体及び磁気記憶装置
TW560095B (en) * 2001-04-02 2003-11-01 Canon Kk Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element
KR100763285B1 (ko) 2001-08-29 2007-10-04 데이빗 엔. 램베스 자성장치
WO2005060657A2 (fr) * 2003-12-15 2005-07-07 Yale University Dispositifs magnetoelectroniques a base de films minces magnetoresistants colossaux
JP4581133B2 (ja) * 2004-03-12 2010-11-17 独立行政法人科学技術振興機構 磁気抵抗素子

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