WO2010062073A3 - Appareil de traitement d'informations magnétiques et procédé de fabrication correspondant - Google Patents

Appareil de traitement d'informations magnétiques et procédé de fabrication correspondant Download PDF

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Publication number
WO2010062073A3
WO2010062073A3 PCT/KR2009/006715 KR2009006715W WO2010062073A3 WO 2010062073 A3 WO2010062073 A3 WO 2010062073A3 KR 2009006715 W KR2009006715 W KR 2009006715W WO 2010062073 A3 WO2010062073 A3 WO 2010062073A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
information processing
manufacturing
magnetic information
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/006715
Other languages
English (en)
Korean (ko)
Other versions
WO2010062073A2 (fr
Inventor
이상훈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea University Research and Business Foundation
Original Assignee
Korea University Research and Business Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea University Research and Business Foundation filed Critical Korea University Research and Business Foundation
Publication of WO2010062073A2 publication Critical patent/WO2010062073A2/fr
Publication of WO2010062073A3 publication Critical patent/WO2010062073A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Abstract

La présente invention concerne un appareil de traitement d'informations et un procédé de fabrication correspondant, et plus particulièrement, un appareil de traitement d'informations magnétiques ainsi qu'un procédé de fabrication correspondant. L'appareil de traitement d'informations magnétiques selon la présente invention comprend un substrat et une couche magnétique formée sur le substrat et contenant un aimant qui possède des propriétés d'anisotropie magnétique, lequel aimant comprend une structure cristalline. La surface cristalline de l'aimant et la surface de la couche magnétique ne correspondent pas l'une à l'autre.
PCT/KR2009/006715 2008-11-27 2009-11-16 Appareil de traitement d'informations magnétiques et procédé de fabrication correspondant Ceased WO2010062073A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20080118761 2008-11-27
KR10-2008-0118761 2008-11-27

Publications (2)

Publication Number Publication Date
WO2010062073A2 WO2010062073A2 (fr) 2010-06-03
WO2010062073A3 true WO2010062073A3 (fr) 2010-08-19

Family

ID=42226224

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006715 Ceased WO2010062073A2 (fr) 2008-11-27 2009-11-16 Appareil de traitement d'informations magnétiques et procédé de fabrication correspondant

Country Status (2)

Country Link
KR (1) KR101145346B1 (fr)
WO (1) WO2010062073A2 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030051876A (ko) * 2000-11-29 2003-06-25 후지쯔 가부시끼가이샤 자기 기록 매체 및 자기 기억 장치
KR100498998B1 (ko) * 2001-04-02 2005-07-01 캐논 가부시끼가이샤 자기저항소자, 자기저항소자를 가진 메모리소자, 및메모리소자를 사용한 메모리
KR100763285B1 (ko) * 2001-08-29 2007-10-04 데이빗 엔. 램베스 자성장치
KR100801452B1 (ko) * 2000-03-22 2008-02-11 프리스케일 세미컨덕터, 인크. 개선된 자기 저항률을 갖는 자기 엘리먼트

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1697585A4 (fr) * 2003-12-15 2009-04-08 Univ Yale Dispositifs magnetoelectroniques a base de films minces magnetoresistants colossaux
JP4581133B2 (ja) * 2004-03-12 2010-11-17 独立行政法人科学技術振興機構 磁気抵抗素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100801452B1 (ko) * 2000-03-22 2008-02-11 프리스케일 세미컨덕터, 인크. 개선된 자기 저항률을 갖는 자기 엘리먼트
KR20030051876A (ko) * 2000-11-29 2003-06-25 후지쯔 가부시끼가이샤 자기 기록 매체 및 자기 기억 장치
KR100498998B1 (ko) * 2001-04-02 2005-07-01 캐논 가부시끼가이샤 자기저항소자, 자기저항소자를 가진 메모리소자, 및메모리소자를 사용한 메모리
KR100763285B1 (ko) * 2001-08-29 2007-10-04 데이빗 엔. 램베스 자성장치

Also Published As

Publication number Publication date
KR101145346B1 (ko) 2012-05-14
WO2010062073A2 (fr) 2010-06-03
KR20100061343A (ko) 2010-06-07

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