WO2010068460A2 - Gravure par refusion de particules - Google Patents

Gravure par refusion de particules Download PDF

Info

Publication number
WO2010068460A2
WO2010068460A2 PCT/US2009/065784 US2009065784W WO2010068460A2 WO 2010068460 A2 WO2010068460 A2 WO 2010068460A2 US 2009065784 W US2009065784 W US 2009065784W WO 2010068460 A2 WO2010068460 A2 WO 2010068460A2
Authority
WO
WIPO (PCT)
Prior art keywords
particles
substrate
etching
semiconductor
article
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/065784
Other languages
English (en)
Other versions
WO2010068460A3 (fr
Inventor
Jun-Ying Zhang
Terry L. Smith
Michael A. Haase
Zhaohui Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of WO2010068460A2 publication Critical patent/WO2010068460A2/fr
Publication of WO2010068460A3 publication Critical patent/WO2010068460A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment

Definitions

  • FIG. 5b is a top-view SEM of melted polystyrene particles on a substrate.
  • FIG. 5c is a cross-sectional view SEM of melted polystyrene particles on a substrate.
  • FIG. 7 is an SEM image of etched substrate using polystyrene as an etch mask.
  • FIG. 8 is an SEM image of close packed microspherical PS particles on the top surface of a substrate.
  • the present description relates to reflow of particle layers for etching.
  • the methods and articles described herein may be particularly useful for preparing roughened surfaces, such as, for light extraction from a semiconductor light emitting diode.
  • the methods and articles described herein are useful, however, for any situation in which a roughened surface is desired.
  • the present description relates to a method comprising coating a dispersed particle solution on a substrate; melting the particles; and etching the substrate.
  • an appropriate particle may be guided, for instance, by considering the appropriate size, adhesive properties, thermal properties, wetting, and etch rates of potential particles.
  • the particle size is selected to correspond to the depth of desired etched features (for instance when etching is taking place on a photo luminescent or electroluminescent surface, particles should be of comparable size to the wavelength of the light being extracted). Further, consideration should be given to the adhesion of particles to the substrate. This will be affected by charge on the particles (if any), as well as any surface functionalization (if present) applied to the particles and/or the substrate.
  • the particles should reflow at a temperature that preferably does not lead to melting or distorting the substrate. Further, the particles should reflow at a temperature that avoids heating the substrate above any temperature that would damage any device structures. This tends to drive the particle materials choice towards thermoplastic polymers, low-melting-temperature glass, or low melting point metals. Exemplary metals include gold, silver, zinc, indium, tin, lead, bismuth, or cadmium. Thermoplastic polymers may also be used, as they allow for reflow without damaging many substrate materials, which cannot tolerate temperatures higher than a 200-300°C. Particle dispersions may be loaded with smaller inorganic particles (e.g., to lower the etch rate).
  • the method for optionally etching the particles is selected such that the particles show a much higher reactivity with a chosen reagent than the substrate. For instance, when polystyrene is used as the particle layer and a II- VI semiconducting material is used as the substrate, the polystyrene particles react much more rapidly with the oxygen plasma than does the II- VI semiconducting material. As a result, the particle material is shrunk, but the substrate remains relatively unaffected.
  • FIG. 2a is a flow chart outlining the steps of a second embodiment of the methods described herein. These steps are also generally shown in
  • FIG. 2b is a diagrammatic representation of FIG. 2b.
  • the methods described herein include melting the particles, either when they are on the substrate or on the hard mask.
  • melting the particles one of skill in the art will understand that the particles should be heated, for instance, above their melting point, or sufficiently above their glass transition temperature (i.e., Tg) such that they reflow during the allotted process time, but without undesirable decomposition, evaporation, or reaction with the substrate or hard mask.
  • Tg glass transition temperature
  • Tg glass transition temperature
  • a number of different dry or wet etching techniques are applicable to the methods described herein. For instance, particles are coated onto a substrate and/or a hard mask. Once coated, the particles may optionally be etched so as to shrink the particles.
  • the etching technique chosen should be one that differentially etches the particles at a much higher rate than the substrate and/or hard mask. This allows for shrinking of the particles while leaving the substrate and/or hard mask substantially unchanged.
  • Useful techniques for etching the particles include, for instance, dry etching techniques such as plasma etching, reactive ion etching, and reactive ion etching with inductively-coupled plasma. Further useful techniques for etching the particles include, for instance, wet etching techniques such as immersion in well-know acidic or basic etchants suited to the chemical nature of the particles and substrate and/or hard mask.
  • a further etching step can provide surface features in the substrate and/or hard mask.
  • an appropriate etching technique one should consider the etch rate ratio between the particles and the substrate or hard mask, the degree of etching anisotropy required (that is, the aspect ratio of the desired structure), and the potential for damage to the substrate during the process.
  • appropriate etching techniques include both dry and wet etching. Dry etching techniques include, for instance, plasma etching, reactive ion etching, reactive ion etching with inductively-coupled plasma. Wet etching techniques include, for instance, immersion in well-know acidic or basic etchants, or solvents
  • surface features are provided. Such surface features can be any appropriate shape for a roughened surface. For instance, when the substrate is a light emitting device, surface features may provide additional light extraction. In such embodiments, conical surface features may be preferable to, say, cylindrical surface features or other surface features having vertical side walls.
  • One method to adjust the wall angle of the features etched into the substrate is to tune the ratio of the etch rates of the melted particles to the substrate. Smaller etch rate ratio tends to produce walls that deviate more from vertical.
  • Another method is to use controlled isotropic etching (e.g., chemical wet etch) or partial isotropic etching. The etch chemical may remove substrate material laterally, producing walls that deviate from vertical.
  • this roughened substrate surface may, for instance, enhance the light extraction from a high-index semiconductor light emitter such as a light emitting diode (LED).
  • a semiconductor substrate comprised a quantum well wavelength conversion structure fabricated from CdMgZnSe alloys similar to those described in U.S. Provisional Patent Applications 61/075,904, and 61/075,932, the contents of which are incorporated herein in their entirety.
  • the layers were optically pumped with a blue laser diode to produce light output at longer wavelengths.
  • the process sequence for using melted polystyrene particles and wet etching a semiconductor substrate to produce light extraction features consisted of: (1) Coating polystyrene (PS) microspheres on the II -VI color converter layer by spin-on or dip-coating methods or other techniques;
  • PS polystyrene
  • PS spherical polystyrene
  • 500nm were obtained from the Duke Scientific Corporation (Palo Alto, CA). A 10wt% solution was diluted in H 2 O to produce a suspension having 1.5 percent by weight solids content.
  • the 500nm PS particles were coated on a semiconductor substrate (specifically onto a so-called II-VI material comprising ZnMgCdSe epilayers) by dip coating (coating speed: 45mm/min). An optical micrograph of the resulting coating is shown in FIG. 4.
  • CdMgZnSe layer on which the PS particle mask was melted was immersed into a wet chemical etch solution containing H2 ⁇ :HBr:Br2 (120:20:1 by volume) for 15 seconds at room temperature without agitation. While a relatively short etch time was used in this study, targeting a relatively small etch depth, one of skill in the art will recognize that optimization of the process could suggest optimal etch conditions for a particular particle-substrate-etching solution combination.
  • FIGs. 6a and 6b respectively, show optical microscope images of the wet etched sample with and without the PS mask.
  • Quantitative measurements of the sample's photo luminescence (PL) efficiency were made at various stages of the patterning process: before application of the PS particles, after melting of the PS particles, after wet etching, and after removal of the PS mask. Measurements were performed using a radiometrically-calibrated integrating sphere and a 440nm laser diode excitation source. External Quantum Efficiency (“EQE") values derived from the PL measurements are shown in Table 1 below. The EQE of the semiconductor substrate with planar surfaces and no PS coating was about 32.8%. EQE enhancement was achieved with the PS coating alone ( ⁇ 1.3X), and further with the wet etching ( ⁇ 1.6X) after removing PS mask.
  • EQE External Quantum Efficiency
  • FIG. 8 is an SEM image of the resulting sample showing close packed microspherical PS particles on the top surface of the semiconductor substrate.
  • the sample was then etched in an oxygen plasma (6 mT, RF power: 8OW, and ICP (inductive coupling plasma) power: 1200W) to shrink the PS particles, as shown in FIG. 9.
  • FIG. 7 is an SEM image of the sample etched for 45s.

Landscapes

  • ing And Chemical Polishing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un procédé de gravure par refusion de particules. Le procédé consiste à revêtir un substrat avec une solution de particules dispersées, à fondre les particules et à graver le substrat. Les particules sont éventuellement gravées avant la fusion. Le procédé consiste également à appliquer un masque dur sur un substrat et à revêtir le masque dur avec une solution de particules dispersées, à fondre les particules et à graver la surface du masque dur. L'invention concerne un article comprenant un substrat et un revêtement de particules fondues. L'article peut également comporter un masque dur sur le substrat.
PCT/US2009/065784 2008-12-12 2009-11-24 Gravure par refusion de particules Ceased WO2010068460A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12216908P 2008-12-12 2008-12-12
US61/122,169 2008-12-12

Publications (2)

Publication Number Publication Date
WO2010068460A2 true WO2010068460A2 (fr) 2010-06-17
WO2010068460A3 WO2010068460A3 (fr) 2010-08-12

Family

ID=42243274

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/065784 Ceased WO2010068460A2 (fr) 2008-12-12 2009-11-24 Gravure par refusion de particules

Country Status (1)

Country Link
WO (1) WO2010068460A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593280A (zh) * 2012-01-11 2012-07-18 中山大学 一种led表面图案化方法
CN103608937A (zh) * 2011-04-28 2014-02-26 国民大学校产学协力团 超小型led元件及其制造方法
JP2015130459A (ja) * 2014-01-09 2015-07-16 電気化学工業株式会社 蛍光体含有多層膜シート、並びに発光装置
CN111073517B (zh) * 2018-10-20 2021-08-31 罗门哈斯电子材料Cmp控股股份有限公司 用于钨的化学机械抛光组合物和方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2895391B1 (fr) * 2005-12-27 2008-01-25 Commissariat Energie Atomique Procede d'elaboration de nanostructures ordonnees
KR100618086B1 (ko) * 2006-02-14 2006-08-30 나이넥스 주식회사 반도체 발광 소자 제조 방법 및 상기 방법을 이용한 발광 다이오드
JP4879614B2 (ja) * 2006-03-13 2012-02-22 住友化学株式会社 ３−５族窒化物半導体基板の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103608937A (zh) * 2011-04-28 2014-02-26 国民大学校产学协力团 超小型led元件及其制造方法
EP2704215A4 (fr) * 2011-04-28 2014-09-10 Univ Kookmin Ind Acad Coop Found Del ultrapetite et procédé de fabrication de ladite del
CN103608937B (zh) * 2011-04-28 2017-03-22 Psi株式会社 超小型led元件及其制造方法
CN102593280A (zh) * 2012-01-11 2012-07-18 中山大学 一种led表面图案化方法
JP2015130459A (ja) * 2014-01-09 2015-07-16 電気化学工業株式会社 蛍光体含有多層膜シート、並びに発光装置
CN111073517B (zh) * 2018-10-20 2021-08-31 罗门哈斯电子材料Cmp控股股份有限公司 用于钨的化学机械抛光组合物和方法

Also Published As

Publication number Publication date
WO2010068460A3 (fr) 2010-08-12

Similar Documents

Publication Publication Date Title
EP2502279B1 (fr) Texturation de surfaces de substrat absorbant la lumière
CN103443952B (zh) 具有纳米粒子和周期性结构的oled光提取膜
US9105878B2 (en) Organic light-emitting diode manufacturing method, organic light-emitting diode, image display device, illumination device, and substrate
CN104662689B (zh) 适于光学耦合层的包含表面改性高折射率纳米粒子的组合物
JP5656177B2 (ja) 有機発光素子用基板及びその製造方法
TWI678006B (zh) 有機電激發光元件
US11024778B2 (en) Large scale film containing quantum dots or dye, and production method therefor
CN102036757A (zh) 涂覆基材的方法
CN101454913A (zh) 基板的微细加工方法、基板的制造方法及发光元件
WO2010068460A2 (fr) Gravure par refusion de particules
US9450154B2 (en) Method for fabricating microstructure to generate surface plasmon waves
US20150084017A1 (en) Organic light-emitting diode device and manufacturing method thereof
CN107637167A (zh) 发光元件
KR100965744B1 (ko) 건식에칭에 의해 요철면이 형성된 기재의 제조방법, 상기방법으로 제조된 기재, 및 상기 기재를 포함하는 광전자소자
CN102210036B (zh) 用于制造发射辐射的有机器件的方法和发射辐射的有机器件
KR101262673B1 (ko) Ｏｌｅｄ 조명용 고효율 광 추출 유리 기판의 제조 방법
KR101280018B1 (ko) 고굴절률 티타니아 미세입자 제조방법
US20160136682A1 (en) Nanoparticle coated substrates and method of making the same
CN110182756B (zh) 一种多环节可见光的光驱微纳马达的制备方法
KR101578903B1 (ko) 나노 복합체를 포함하는 전극 및 그 제조방법
US20190019995A1 (en) Method of patterning multi-layer structure
Chao et al. Controlled formation of well-aligned GaAs nanowires with a high aspect ratio on transparent substrates
KR101580054B1 (ko) 광 기능성 패턴 구조물의 제조 방법
KR101517151B1 (ko) Oled 소자용 기판 및 그 제조 방법
Lin et al. Si micro-and nano-structures for communication and energy applications

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09832345

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09832345

Country of ref document: EP

Kind code of ref document: A2