WO2010093733A2 - Détection des défauts sur une tranche - Google Patents

Détection des défauts sur une tranche Download PDF

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Publication number
WO2010093733A2
WO2010093733A2 PCT/US2010/023802 US2010023802W WO2010093733A2 WO 2010093733 A2 WO2010093733 A2 WO 2010093733A2 US 2010023802 W US2010023802 W US 2010023802W WO 2010093733 A2 WO2010093733 A2 WO 2010093733A2
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
output
raw output
raw
inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/023802
Other languages
English (en)
Other versions
WO2010093733A3 (fr
Inventor
Junqing Huang
Yong Zhang
Stephanie Chen
Tao Luo
Lisheng Gao
Richard Wallingford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Priority to EP10741683A priority Critical patent/EP2396815A4/fr
Priority to CN201080016422.8A priority patent/CN102396058B/zh
Priority to SG2011056926A priority patent/SG173586A1/en
Priority to JP2011550208A priority patent/JP5570530B2/ja
Priority to KR1020117021145A priority patent/KR101674698B1/ko
Publication of WO2010093733A2 publication Critical patent/WO2010093733A2/fr
Publication of WO2010093733A3 publication Critical patent/WO2010093733A3/fr
Priority to US13/196,758 priority patent/US8775101B2/en
Priority to IL214488A priority patent/IL214488A/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Definitions

  • the same circuit pattern is printed in each die on the wafer.
  • Most wafer inspection systems take advantage of this fact and use a relatively simple die-to-die comparison to detect defects on the wafer.
  • the printed circuit in each die may include many areas of patterned features that repeat in the x or y direction such as the areas of DRAM, SRAM, or FLASH. This type of area is commonly referred to as an array area (the rest of the areas are called random or logic areas).
  • array area the rest of the areas are called random or logic areas.
  • advanced inspection systems employ different strategies for inspecting the array areas and the random or logic areas.
  • the defect detection algorithm may be a segmented auto- thresholding (SAT) algorithm or a MDAT algorithm. Such defect detection algorithms may be particularly suitable for 13F inspection. How r ev ⁇ r, the defect detection algorithm may be a defect detection algorithm that is suitable for DF inspection. For example, the defect detection algorithm may be a FAST algorithm or an HLAT algorithm.
  • SAT segmented auto- thresholding
  • MDAT MDAT
  • the computer-implemented method further includes applying the assigned one or more defect detection parameters to the individual output assigned to the different segments to thereby detect defects on the wafer.
  • different segments can be treated differently with different inspection recipes.
  • applying the assigned one or more defect detection parameters to the individual output may include inspecting segments with different recipes to thereby detect defects on the wafer.
  • the segment to which the individual output has been assigned can be used to determine the threshold that is to be applied to the difference between the individual output and the reference.
  • the assigned one or more detect detection parameters can be applied to the individual output assigned to the different segments as would normally be performed,
  • the computer subsystem is configured to identify one or more characteristics of the raw output that correspond to one or more geometrical characteristics of patterned features formed on the wafer according to any of the embodiments described herein.
  • the one or more characteristics of the raw output may include any such characteristics described herein.
  • the one or more geometrical characteristics may also include any such characteristics described herein.
  • the patterned features may include any of the patterned features described herein.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Processing (AREA)

Abstract

La présente invention a trait à des procédés et à des systèmes permettant de détecter les défauts sur une tranche.
PCT/US2010/023802 2009-02-13 2010-02-10 Détection des défauts sur une tranche Ceased WO2010093733A2 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP10741683A EP2396815A4 (fr) 2009-02-13 2010-02-10 Détection des défauts sur une tranche
CN201080016422.8A CN102396058B (zh) 2009-02-13 2010-02-10 检测晶片上的缺陷
SG2011056926A SG173586A1 (en) 2009-02-13 2010-02-10 Detecting defects on a wafer
JP2011550208A JP5570530B2 (ja) 2009-02-13 2010-02-10 ウェハー上の欠陥検出
KR1020117021145A KR101674698B1 (ko) 2009-02-13 2010-02-10 웨이퍼 상의 결함들 검출
US13/196,758 US8775101B2 (en) 2009-02-13 2011-08-02 Detecting defects on a wafer
IL214488A IL214488A (en) 2009-02-13 2011-08-07 Detecting defects on a wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15247709P 2009-02-13 2009-02-13
US61/152,477 2009-02-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/196,758 Continuation US8775101B2 (en) 2009-02-13 2011-08-02 Detecting defects on a wafer

Publications (2)

Publication Number Publication Date
WO2010093733A2 true WO2010093733A2 (fr) 2010-08-19
WO2010093733A3 WO2010093733A3 (fr) 2010-10-28

Family

ID=42562263

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/023802 Ceased WO2010093733A2 (fr) 2009-02-13 2010-02-10 Détection des défauts sur une tranche

Country Status (7)

Country Link
EP (1) EP2396815A4 (fr)
JP (1) JP5570530B2 (fr)
KR (1) KR101674698B1 (fr)
CN (1) CN102396058B (fr)
IL (1) IL214488A (fr)
SG (1) SG173586A1 (fr)
WO (1) WO2010093733A2 (fr)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
US8139843B2 (en) 2005-11-18 2012-03-20 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8204296B2 (en) 2007-07-20 2012-06-19 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
CN102543789A (zh) * 2010-12-01 2012-07-04 株式会社日立高新技术 基板的品质评价方法及其装置
WO2013109755A1 (fr) * 2012-01-20 2013-07-25 Kla-Tencor Corporation Segmentation pour l'inspection de tranches
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
WO2014107522A1 (fr) * 2013-01-02 2014-07-10 Kla-Tencor Corporation Détection de défauts sur une tranche
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US8923600B2 (en) 2005-11-18 2014-12-30 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
WO2015006230A1 (fr) * 2013-07-08 2015-01-15 Kla-Tencor Corporation Procédés et systèmes de détection de défauts répétitifs sur des galettes en semiconducteur en utilisant des données de conception
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US9092846B2 (en) 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
WO2015148851A1 (fr) * 2014-03-27 2015-10-01 Kla-Tencor Corporation Mise en forme d'échantillons de production préservant la re-normalisabilité
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9659670B2 (en) 2008-07-28 2017-05-23 Kla-Tencor Corp. Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection

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US9535010B2 (en) * 2014-05-15 2017-01-03 Kla-Tencor Corp. Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
US10127653B2 (en) * 2014-07-22 2018-11-13 Kla-Tencor Corp. Determining coordinates for an area of interest on a specimen
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
US9518934B2 (en) * 2014-11-04 2016-12-13 Kla-Tencor Corp. Wafer defect discovery
US9830421B2 (en) * 2014-12-31 2017-11-28 Kla-Tencor Corp. Alignment of inspection to design using built in targets
US10062543B2 (en) * 2015-06-23 2018-08-28 Kla-Tencor Corp. Determining multi-patterning step overlay error
CN108475422B (zh) * 2015-08-12 2019-09-06 科磊股份有限公司 在电子束图像中确定缺陷的位置
US10535131B2 (en) * 2015-11-18 2020-01-14 Kla-Tencor Corporation Systems and methods for region-adaptive defect detection
CN105699396A (zh) * 2016-03-29 2016-06-22 同高先进制造科技（太仓）有限公司 基于光扫描的焊接激光头保护镜污染检测装置及方法
US10699926B2 (en) * 2017-08-30 2020-06-30 Kla-Tencor Corp. Identifying nuisances and defects of interest in defects detected on a wafer
US11114324B2 (en) * 2019-04-10 2021-09-07 KLA Corp. Defect candidate generation for inspection

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Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8923600B2 (en) 2005-11-18 2014-12-30 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8139843B2 (en) 2005-11-18 2012-03-20 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US8204296B2 (en) 2007-07-20 2012-06-19 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
US9659670B2 (en) 2008-07-28 2017-05-23 Kla-Tencor Corp. Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
CN102543789A (zh) * 2010-12-01 2012-07-04 株式会社日立高新技术 基板的品质评价方法及其装置
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
KR20140116946A (ko) * 2012-01-20 2014-10-06 케이엘에이-텐코 코포레이션 웨이퍼 검사를 위한 분할
WO2013109755A1 (fr) * 2012-01-20 2013-07-25 Kla-Tencor Corporation Segmentation pour l'inspection de tranches
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
WO2014107522A1 (fr) * 2013-01-02 2014-07-10 Kla-Tencor Corporation Détection de défauts sur une tranche
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
US9092846B2 (en) 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9355208B2 (en) 2013-07-08 2016-05-31 Kla-Tencor Corp. Detecting defects on a wafer
WO2015006230A1 (fr) * 2013-07-08 2015-01-15 Kla-Tencor Corporation Procédés et systèmes de détection de défauts répétitifs sur des galettes en semiconducteur en utilisant des données de conception
WO2015148851A1 (fr) * 2014-03-27 2015-10-01 Kla-Tencor Corporation Mise en forme d'échantillons de production préservant la re-normalisabilité
KR20160140805A (ko) * 2014-03-27 2016-12-07 케이엘에이-텐코 코포레이션 재정규화 가능성을 보존하는 생산 샘플 성형
US10338004B2 (en) 2014-03-27 2019-07-02 KLA—Tencor Corp. Production sample shaping that preserves re-normalizability
KR102215121B1 (ko) 2014-03-27 2021-02-09 케이엘에이 코포레이션 재정규화 가능성을 보존하는 생산 샘플 성형

Also Published As

Publication number Publication date
CN102396058B (zh) 2014-08-20
IL214488A (en) 2016-04-21
JP2012518278A (ja) 2012-08-09
JP5570530B2 (ja) 2014-08-13
EP2396815A4 (fr) 2012-11-28
WO2010093733A3 (fr) 2010-10-28
EP2396815A2 (fr) 2011-12-21
SG173586A1 (en) 2011-09-29
KR101674698B1 (ko) 2016-11-09
IL214488A0 (en) 2011-09-27
KR20110124303A (ko) 2011-11-16
CN102396058A (zh) 2012-03-28

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