WO2011060905A3 - Dispositif et procédé d'évaporation thermique du silicium - Google Patents

Dispositif et procédé d'évaporation thermique du silicium Download PDF

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Publication number
WO2011060905A3
WO2011060905A3 PCT/EP2010/006910 EP2010006910W WO2011060905A3 WO 2011060905 A3 WO2011060905 A3 WO 2011060905A3 EP 2010006910 W EP2010006910 W EP 2010006910W WO 2011060905 A3 WO2011060905 A3 WO 2011060905A3
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
silicon
thermal evaporation
evaporator cell
evaporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/006910
Other languages
English (en)
Other versions
WO2011060905A2 (fr
Inventor
Lars Jeurgens
Albrecht Fischer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Createc Fischer and Co GmbH
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Createc Fischer and Co GmbH
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Createc Fischer and Co GmbH, Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Createc Fischer and Co GmbH
Priority to US13/511,046 priority Critical patent/US20120251722A1/en
Publication of WO2011060905A2 publication Critical patent/WO2011060905A2/fr
Publication of WO2011060905A3 publication Critical patent/WO2011060905A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne une cellule d'évaporateur (100), notamment destinée à l'évaporation d'un matériau à haute température de fusion tel que le Si, qui comprend un premier creuset (10) adapté à recevoir le matériau à faire évaporer et fournir au moins un premier volume d'évaporation, et un dispositif de chauffage (30) étant disposé pour chauffer le premier creuset (10), le premier creuset (10) étant disposé dans un second creuset (20) entourant le premier creuset (10), de manière à ce qu'un écart (25) soit formé entre les premier et second creusets (10, 20), l'écart (25) fournissant un second volume d'évaporation. La présente invention concerne en outre une installation de revêtement avec au moins une cellule d'évaporateur et un procédé d'évaporation avec un matériau à température de fusion élevée utilisant la cellule d'évaporateur (100).
PCT/EP2010/006910 2009-11-20 2010-11-12 Dispositif et procédé d'évaporation thermique du silicium Ceased WO2011060905A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/511,046 US20120251722A1 (en) 2009-11-20 2010-11-12 Device and method for thermal evaporation of silicon

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09014510A EP2325348B1 (fr) 2009-11-20 2009-11-20 Dispositif et procédé pour l'évaporation thermique du silicium
EP09014510.3 2009-11-20

Publications (2)

Publication Number Publication Date
WO2011060905A2 WO2011060905A2 (fr) 2011-05-26
WO2011060905A3 true WO2011060905A3 (fr) 2011-08-11

Family

ID=42101533

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/006910 Ceased WO2011060905A2 (fr) 2009-11-20 2010-11-12 Dispositif et procédé d'évaporation thermique du silicium

Country Status (3)

Country Link
US (1) US20120251722A1 (fr)
EP (1) EP2325348B1 (fr)
WO (1) WO2011060905A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012022619B3 (de) 2012-11-19 2014-03-06 Createc Fischer & Co. Gmbh Verdampferzelle, Beschichtungsvorrichtung und Verfahren zur Verdampfung eines Verdampfungsmaterials
CN104018121A (zh) * 2014-05-14 2014-09-03 深圳市华星光电技术有限公司 防止高温金属材料泄漏的加热容器及其制造方法
CN103966555B (zh) * 2014-05-28 2016-04-20 深圳市华星光电技术有限公司 蒸镀源加热装置
CN104233196B (zh) * 2014-09-01 2017-04-19 京东方科技集团股份有限公司 蒸镀坩埚和蒸镀装置
US20190136366A1 (en) * 2017-11-08 2019-05-09 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Crucible and vapor deposition method
US20220228250A1 (en) * 2021-01-15 2022-07-21 Phoenix Silicon International Corp. Crucible and vapor deposition apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07300666A (ja) * 1994-04-27 1995-11-14 Nissin Electric Co Ltd シリコン蒸発用分子線源およびこれに用いるるつぼの製造方法
JPH11222667A (ja) * 1998-02-06 1999-08-17 Ulvac Corp 蒸着源用るつぼ、及び蒸着装置
US20060278167A1 (en) * 2005-06-06 2006-12-14 Createc Fischer & Co. Gmbh High-temperature evaporator cell and process for evaporating high-melting materials
JP2006348337A (ja) * 2005-06-15 2006-12-28 Sony Corp 蒸着成膜装置および蒸着源

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007035166B4 (de) 2007-07-27 2010-07-29 Createc Fischer & Co. Gmbh Hochtemperatur-Verdampferzelle mit parallel geschalteten Heizbereichen, Verfahren zu deren Betrieb und deren Verwendung in Beschichtungsanlagen

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07300666A (ja) * 1994-04-27 1995-11-14 Nissin Electric Co Ltd シリコン蒸発用分子線源およびこれに用いるるつぼの製造方法
JPH11222667A (ja) * 1998-02-06 1999-08-17 Ulvac Corp 蒸着源用るつぼ、及び蒸着装置
US20060278167A1 (en) * 2005-06-06 2006-12-14 Createc Fischer & Co. Gmbh High-temperature evaporator cell and process for evaporating high-melting materials
JP2006348337A (ja) * 2005-06-15 2006-12-28 Sony Corp 蒸着成膜装置および蒸着源

Also Published As

Publication number Publication date
WO2011060905A2 (fr) 2011-05-26
US20120251722A1 (en) 2012-10-04
EP2325348B1 (fr) 2012-10-24
EP2325348A1 (fr) 2011-05-25

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