WO2011069272A1 - Dispositif et procédé de transport de substrats plats tels que des galettes de silicium - Google Patents

Dispositif et procédé de transport de substrats plats tels que des galettes de silicium Download PDF

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Publication number
WO2011069272A1
WO2011069272A1 PCT/CH2010/000308 CH2010000308W WO2011069272A1 WO 2011069272 A1 WO2011069272 A1 WO 2011069272A1 CH 2010000308 W CH2010000308 W CH 2010000308W WO 2011069272 A1 WO2011069272 A1 WO 2011069272A1
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WO
WIPO (PCT)
Prior art keywords
electrode
electrodes
chuck
substrate
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CH2010/000308
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German (de)
English (en)
Inventor
Arthur BÜCHEL
Christian Spoerl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idonus Sarl
IWORKS AG
Original Assignee
Idonus Sarl
IWORKS AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idonus Sarl, IWORKS AG filed Critical Idonus Sarl
Publication of WO2011069272A1 publication Critical patent/WO2011069272A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Definitions

  • This present invention relates to an apparatus and a method for the
  • Transporting flat substrates such as silicon wafers for the production of solar cells (wafers), which can be held on a transport carrier by means of electrostatic force.
  • Wafers are today often transported in process plants by means of vacuum or Bernoulli suckers or similar technology. These principles are mature, but unfortunately only work under atmosphere and are unsuitable for vacuum processes. Therefore, for the production of solar cells, the wafers are often transported by means of a so-called "carrier" from one process station to the next, which basically works, but can bring a process contamination of the carrier and also a regular conditioning (temperature, outgassing, cleaning after processing ) the carrier needs.
  • electrostatic chucks So-called electrostatic chucks (e-chucks) have been used in semiconductor technology for years to hold a substrate by means of electrostatic force.
  • Electrostatic chuck has a base which is attached to a mechanical arm. On the base, elongated metallic electrodes are arranged parallel and spaced apart. The electrodes are embedded in a dielectric material whose surface forms the support surface for a wafer to be held. To attract a wafer, different voltage potentials are applied to adjacent electrodes so that electrostatic fields are generated between the electrodes. These electrostatic fields penetrate the wafer and fix it to the wing by Coulomb forces. The generated attraction force is directly proportional to the electrostatic force acting between the electrodes.
  • the special feature of this E-Chuck is the dielectric layer, which covers the electrodes and on which the wafer to be held lies.
  • the holding force is increased.
  • a high holding force is useful to hold a wafer during a transport movement.
  • an increased holding force has the disadvantage that after switching off the voltage residual charges in the
  • Transport device can be removed. So that the wafer can be picked up by the E-Chuck of the transport device, this may only rest on the edge of the wafer so that the E-Chuck can move it from one side under the wafer. After the wafer is in contact with the E-Chuck, it can be held for transport purposes by switching on the voltage on the E-Chuck.
  • the transport device In order to deposit the wafer, it must again be placed on the edge, e.g. stored in a wafer cassette. If the wafer lies on the edge, the transport device can travel downwards and strip the wafer against the force generated by the residual charge.
  • the patent EP 1, 391, 786 describes an E-chuck in which the substrate to be clamped does not rest with its entire surface on the E-chuck.
  • the bearing surface of the E-Chuck is defined by pins, which up to a maximum of 10 ⁇ of the
  • the E-chuck of EP 1, 391, 786 is only designed to fix a wafer resting on the E-chuck.
  • the application of voltages that allowed the wafer to lift would inevitably lead to the build-up of charges that would bind the wafer to the E-Chuck for a longer time.
  • this arrangement is not suitable for the tool-free detachment of wafers, for example for a solar cell production.
  • a special feature in the production of solar cells is that wafer handling must work under vacuum as well as under atmospheric conditions. As far as possible, mechanical gripping of the wafer should be avoided since solar wafers are thinner and thus much more fragile than wafers for semiconductor applications. Usually, the strength of these solar wafers is between 150 ⁇ and 250 ⁇ , where it would be desirable for the purpose of saving material to make the solar wafers even thinner. The area of a wafer that must be touched for transport should be as small as possible. In addition, a transport system would be desirable with which at least one row of wafers, even better gridded wafers, can be transported all at once. The well-known E-Chucks is thus common that they do not meet the special requirements for the manipulation of solar wafers for the production of solar cells.
  • the invention has the object to provide a cost effective, efficient solution for the transport of particular solar wafers, which is as suitable for a vacuum applications as for an application in the atmosphere.
  • it is an object to propose an electrostatic chuck (E-chuck), in which, on the one hand, lifting and depositing a wafer is possible without additional aids being used.
  • E-chuck electrostatic chuck
  • the e-chuck should be designed to attract a wafer, in particular solar wafers, without touching it mechanically before lifting, against its gravitational force and holding it on the e-chuck.
  • the by the existing residual charge generated liability after equipotential bonding be so low that the solar wafers dissolves automatically from the E-Chuck.
  • the object according to the preamble of claim 1 is achieved in that the raised contact points protrude by more than 0.05 mm, preferably more than 0.1 mm and more preferably more than 0.15 mm from the surface of the front side and the first electrode at a distance from the second electrode the front of the carrier layer is formed.
  • a dielectric layer is applied to the first electrode, and the raised contact points project beyond the dielectric layer by more than 0.05 mm, preferably more than 0.1 mm and particularly preferably more than 0.15 mm.
  • the first electrode has a sufficient distance from the second electrode, so that a flashover can be prevented.
  • the electrodes are spaced> 0.5 mm and preferably> 1 mm apart.
  • the first electrode is coated with a dielectric layer.
  • the attraction can be increased.
  • the fact that the first electrode is formed on the front significantly greater Coulomb forces can be generated than with the E-chuck of EP 1, 391, 786th Consequently, it is possible to lift the wafer with the inventive E-Chuck and to pull on the E-Chuck.
  • the main function of the dielectric layer is an insulation between the first and second electrodes and between the first
  • the inventive E-chuck is designed so that the wafer does not touch the dielectric layer of the E-Chuck in the held state, but only or especially the surface of the elevated contact points of the second electrodes.
  • the raised contact points can be formed by protruding pins. These pins have electrical connections to the back of the carrier layer where they are electrical be connected to each other to be connected to a voltage source.
  • the pins are at ground potential. As a result, charge buildup on the wafer to be transported can be prevented.
  • the solar wafer can lower without the use of additional tools.
  • the ontakt ist of the wafer through the pins, its potential can not change and also in that the forces that are due to residual charges in the dielectric layer, are smaller than the gravitational force acting on the wafer acts.
  • the pins are designed to be high.
  • the electrodes which are required for the pins (support elements) extend through the base plate of the E-Chuck and are next to the
  • the main task of the dielectric layer is to be an electrically insulating layer.
  • the layer must have a relatively large thickness of, for example 50-100 ⁇ . Disadvantage of such a thick, dielectric layer is the large residual charge after switching off the power supply. For this reason, the pins which adjust the distance between the dielectric layer and the wafer must have a corresponding height.
  • the pins project beyond the surface of the dielectric layer by more than 0.01 mm, preferably at least 0.05 mm and most preferably at least 0.3 mm and at most 3.0 mm, preferably at most 1.0 mm and most preferably at most 0.8 mm. That is, the height of the pins is optimized so that in the holding position on the one hand a contact between the substrate and the dielectric layer is prevented and on the other hand, the acting Coulomb Forces are sufficiently large so that the wafer can be kept away from its gravitational force for transport purposes.
  • the ratio of the contact surface of the pins to the surface of the dielectric layer is less than 10%, preferably less than 5% and most preferably less than 1%. That is, the pins are only punctiform and spaced apart. It should be ensured that bending of the substrate is prevented.
  • the pins have a preferably flat surface. The surfaces of the pins are substantially aligned with each other, so that a flat contact surface is formed for the substrate.
  • a possible structure of the E-Chuck consists of at least two metallic electrodes, which are located on an electrically non-conductive base plate of 1.0 mm thickness. These electrodes are covered with a dielectric layer.
  • pins made of a conductive material are provided on the E-Chuck front. Electrical connections of the pins and the two metallic electrodes are passed through the base plate to the E-Chuck back. On the rear side, the pins are electrically connected to each other in order to contact them with the ground potential (GND) during operation.
  • GND ground potential
  • the main task of the dielectric layer is to ensure the mutual isolation of the electrodes, since they are subjected to a high voltage.
  • One of the electrodes is supplied with a positive high voltage of about 1500V, the other of the two electrodes is preferably acted upon by the opposite negative high voltage, whereby a
  • the area of the pins which contact the wafer in the held state preferably rise between 0.1 mm and 1.0 mm and more preferably between 0.3 mm and 0.4 mm over the dielectric.
  • the number of pins and the entire contact surface should be as small as possible.
  • a plurality of first and / or second electrodes is formed on the front side of the carrier layer. This means that the E-Chuck can be designed as a bi- or multipolar E-Chuck. By providing separate contact points for the first electrodes, these can be connected to different voltage sources.
  • the present invention is also a method for transporting flat substrates, in particular semiconductor substrates and of solar wafers, in which method at least one substrate by applying the at least one electrode of an electrostatic Chucks with a DC or
  • a device for receiving the substrate, a device according to one of claims 1 to 8 is placed above and short distance from the substrate and a voltage is applied to the first electrode so that the substrate is attracted and held to the downwardly facing front side of the device, and to release the substrate, the voltage potential of the first electrode is lowered relative to the second electrode.
  • the underlying substrate before lifting in at least a distance of> 0.05mm, preferably> 0.1mm from the lower edge of the second electrode are located.
  • the at least two first electrodes are preferably subjected to opposite voltages. In this way, sufficiently large forces can be generated to overcome the gravity of the wafer.
  • the first electrodes are subjected to a voltage of at least 500 volts, preferably at least 1000 volts and very particularly preferably at least 1200 volts, and the second electrodes are grounded. The latter measure ensures that the wafers remain at ground potential.
  • a plurality of E-Chucks on a transport device such as a transport arm, with the front side down oriented and transported in the transport operation a plurality of substrates simultaneously. This leads to a significant increase in productivity.
  • the subject of the present application is also a transport device for transporting a flat substrate with a device according to one of claims 1 to 8.
  • a plurality of devices according to one of claims 1 to 9 in a line arrangement or a grid arrangement, e.g. checkered, each spaced from each other.
  • the transport device is preferably designed to linear movement / s and / or one or more
  • a transport device consists of a movable transport element, such as a movable transport plate, which is provided with an e-chuck.
  • Transport device may transport the transport plate at least from one station to a next station. But it is also conceivable that the transport device conveys the transport plate from a station linearly to a transfer position and then can move further to a next station.
  • the arrangement of the processing stations can also be "cluster" -like, that is, in the
  • Transfer position is a rotational movement of the transport device about an axis of rotation possible to selectively go to various other positions.
  • a voltage is applied to the E-Chuck on the transport plate, an electrostatic force is generated and wafers under the E-Chuck device are attracted to the E-Chuck.
  • the E-chuck can then be transported with the wafers by means of the transport device in the transfer station and then in a process station.
  • the voltage is switched off. With the associated elimination of electrostatic force, the wafers sink onto the underlying platen.
  • the E-Chuck transport plate is removed from the process station and the wafers can then be processed in the process station.
  • the E-Chuck transport plate After processing, the E-Chuck transport plate is moved back to the previous position, a voltage is applied to the E-Chuck and the associated electrostatic forces cause the substrates are attracted to the bottom of the E-Chuck, now from the Process station can be removed and transported to a next position.
  • Fig. 1 Schematically a section through a known bipolar E-chuck with held wafer
  • Fig. 2 Schematically a section through a known monopolar E-chuck with held wafer
  • Fig. 3 Schematically a section through an embodiment of the
  • FIG. 6 shows a section through an embodiment of a process station and a
  • FIG. 7 shows a section through an embodiment of a transfer station with a
  • FIG. 8 shows a sectional view of the embodiment of FIG. 7 from above
  • FIG. 1 shows a section through a bipolar E-chuck 10.
  • the E-chuck In order to hold a wafer, the E-chuck must have two separate electrical conductors, one conductor 11 being a positive charge and a second conductor 13 being a negative one or neutral charge.
  • the electric field generated by the conductors 11, 13 attracts the movable electric charges of the opposite polarity in the wafer 15.
  • a dielectric layer 14 is needed between the conductors 1, 13 and the wafer 15.
  • the dielectric layer 14 prevents charges from being exchanged between the conductors 11, 13 and the wafer to be held.
  • the wafer 15 can thereby fixed by means of acting between the conductors 11, 13 and the substrate electrostatic Coulomb - force on the E-Chuck.
  • the wafer touches the dielectric layer in this embodiment with its entire surface, a mechanical force is usually required in addition to the wafer after turning off the power source to remove the wafer.
  • the wafer is charged at a longer duty cycle, which after switching off the
  • FIG. 2 shows a section through a monopolar E-chuck 12.
  • Ladder 11 has a positive charge. Since the wafer 15 has a negative (or neutral) charge, an electrostatic force is generated. In order to obtain the negative charge on the wafer, the wafer is contacted with a negative conductor 13 on the side or the back side.
  • the state of charge of the wafer remains negative. Since the wafer also touches the dielectric layer 1 over the whole area, a mechanical force is additionally required after switching off in order to remove the wafer.
  • the inventive arrangement shown in Figure 3 shows a section through a downwardly directed E-chuck 50 (total unit 51 to 57), which on a transport member, such as a transport plate 25, is attached.
  • the E-chuck 50 consists of an insulating base plate 51, on which two metallic electrodes 52 and 53 are located.
  • the base plate may have a thickness between 0.4 and 2 mm, preferably between 0.6 and 1.5 mm, and more preferably between 0.8 and 1.2 mm.
  • the two electrodes 52 and 53 are preferably screen printed on the base plate and have a thickness of> 500 nm, preferably more than 1 ⁇ , and more preferably more than 3 ⁇ .
  • the maximum layer thickness of the electrode is preferably not more than 20 ⁇ , and more preferably not more than 10 ⁇ .
  • the electrodes 52, 53 are covered with a dielectric material 55 on the front side.
  • the dielectric layer 55 may have a thickness between 1 ⁇ and 100 ⁇ , preferably between 30 ⁇ and 70 ⁇ .
  • the two electrodes 52 and 53 are therefor to be charged with a positive or negative high voltage. Furthermore, at the front of the
  • Base plate still formed an electrode 54, which is placed in operation on ground (GND).
  • GND ground
  • a plurality of pins 57 for example, by gluing or soldering, fixed, which also consist of an electrically conductive material. These pins have a height such that when the wafer is adhered there is a certain distance between the wafer and the dielectric layer. All electrodes 52 and 53 and 54 have a conductive leadthrough 58 through the
  • Base plate 51 There is sufficient space on the back side of the base plate 51 to accommodate e.g. by means of a cable to contact the electrical feedthroughs (not shown in the figure). Parts of the tracks on the back of the substrate may also be covered with an insulating layer so that only one contact point per electrode remains.
  • This described E-chuck 50 is mounted on or on a transport plate 25.
  • the transport plate 25 preferably has openings 59 at the locations where the electrical contact is.
  • a wafer 63 is shown in FIG.
  • the wafer 63 contacts only the pins 57.
  • a distance remains between the wafer 63 and the dielectric layer 55.
  • FIG. 4 shows a top on the front side of the E-chuck 50 (overall unit 51 to 57), which is mounted on a
  • Transport plate as described in Figure 3, is attached.
  • the areas of the two high voltage electrodes 52 and 53 are approximately equal and cover most of the area of the E-chuck. It can also be seen that the pins 57 as a whole occupy only a small part of the E-chuck surface. Between each electrode 52, 53 and 54, a distance to the mutual electrical insulation is provided in each case.
  • FIG. 5 shows a section through a transport device with an E-chuck as shown in Figure 3, wherein the execution so is designed that several e-chucks 50 are mounted on the transport device. This makes it possible to transport a plurality of wafers 63 at the same time.
  • FIG. 6 shows a section through the structure of a system which consists of a process station 31 and a transfer station 33.
  • Process station 31 and transfer station 33 are connected to each other by means of a lock valve 39.
  • the transport device 25 according to the invention can be moved linearly by means of a movement device 37 with a vacuum feed-through, so that the loading device 43 in the transfer station 33 is accessible for the loading of wafers. After loading with wafer, the transport device 25 is moved via the loading device 43. The loading device 43 is then raised or the transport device 25, until between the transport device and the
  • the transfer station can be evacuated and then the lock valve 39 can be opened.
  • Transport device 43 are moved into the process station 31.
  • the charging device 43 is brought into a position in which only a small gap between the
  • Loading device and the transport device ( ⁇ 3 mm) consists.
  • the potential between wafers and E-chuck is then removed and the wafers are lowered onto the loading device 29. Subsequently, the transport device from the
  • Process station are moved, the lock valve is closed and the process for processing the substrates can begin.
  • the discharge of the wafers from the process station 31 takes place in the reverse order.
  • FIG. 7 shows a structure of the system as shown in Figure 6, with the addition that on the loading device 43 elements 45 for the support of the wafer are mounted so that the wafers rest only in the edge region, as in Figure 8 is shown.
  • This addition allows wafer flipping (turning 180 °) in a vacuum.
  • the rotation can be carried out as follows: The transport device 25 is moved by means of the movement device 37 in the waiting position 49 (shown in dashed lines in FIG. 7). Subsequently, the transport device is rotated by 180 degrees by means of a rotating mechanism 47 (FIG. 8), so that the E-chuck of the transport device is at the top.
  • the loading device 45 is moved to a position which allows the transporting device 25 to be brought into loading position under the wafers but above the base plate of the transporting device. Subsequently, the charging device is lowered, the wafers are on the E-Chuck side of the conveyor, a holding voltage is applied to the E-Chuck. In turn, the transport device can again be rotated by 180 degrees by means of the movement device 47, and the processing of the preceding back side of the wafers in the process station 31 can subsequently take place.
  • An electrostatic chuck comprises a carrier layer of an electrically nonconducting material and at least a first and a second electrode 52 and / or 53 and 54, 57 arranged on the carrier layer.
  • the first and second electrodes are arranged on the front side of the carrier layer, which faces a substrate 63 to be received.
  • the first electrode 52 or 53 can be embodied in one, two or more parts and is preferably coated with a dielectric layer 55.
  • the second electrode 54, 57 is formed by a plurality of pins (more than 3), which protrude by more than 0.05 mm, preferably more than 0.1 mm and particularly preferably more than 0.15 mm from the surface of the dielectric layer 55.

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Un support individuel électrostatique de galette comporte une couche de support (51) constituée d'un matériau non électroconducteur et au moins une première et une deuxième électrode (52, 53) et (54, 57) disposées sur la couche de support (51). Les premières et deuxièmes électrodes sont disposées sur le côté avant de la couche de support qui est orienté vers le substrat (63) à recevoir. La première électrode (52) ou (53) peut être réalisée en une, deux ou plus de deux pièces et est de préférence revêtue d'une couche diélectrique (55). La deuxième électrode (54, 57) est formée pour une pluralité de broches (plus de 3) qui s'écartent de plus de 0,05 mm, de préférence de plus de 0,1 mm et mieux encore de plus de 0,15 mm de la surface de la couche diélectrique (55). Selon un procédé pour le transport de galettes solaires, celles-ci sont attirées par application d'une tension sur les électrodes (52 et/ou 53, 54, 57) sur un support individuel électrostatique (50) positionné au-dessus de celles-ci. Pour libérer la galette solaire, le potentiel de tension de la première électrode est abaissé par rapport à celui de la deuxième électrode.
PCT/CH2010/000308 2009-12-07 2010-12-07 Dispositif et procédé de transport de substrats plats tels que des galettes de silicium Ceased WO2011069272A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH01882/09A CH702404A1 (de) 2009-12-07 2009-12-07 Vorrichtung und Verfahren für das Halten und Transportieren von Substraten.
CH1882/09 2009-12-07

Publications (1)

Publication Number Publication Date
WO2011069272A1 true WO2011069272A1 (fr) 2011-06-16

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WO (1) WO2011069272A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4502094A (en) * 1981-09-14 1985-02-26 U.S. Philips Corporation Electrostatic chuck
US4962441A (en) 1989-04-10 1990-10-09 Applied Materials, Inc. Isolated electrostatic wafer blade clamp
DE4107752A1 (de) * 1990-03-13 1991-09-26 Fuji Electric Co Ltd Elektrostatische einspannvorrichtung fuer ein scheibenfoermiges substrat
US20020098072A1 (en) * 2001-01-19 2002-07-25 Applied Materials, Inc. Dual bladed robot apparatus and associated method
EP1391786A1 (fr) 2002-08-23 2004-02-25 ASML Netherlands B.V. Support, appareil lithographique et méthode de fabrication d'un dispositif
JP2008205509A (ja) * 2008-05-15 2008-09-04 Ulvac Japan Ltd 絶縁基板搬送方法、位置合わせ方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4502094A (en) * 1981-09-14 1985-02-26 U.S. Philips Corporation Electrostatic chuck
US4962441A (en) 1989-04-10 1990-10-09 Applied Materials, Inc. Isolated electrostatic wafer blade clamp
DE4107752A1 (de) * 1990-03-13 1991-09-26 Fuji Electric Co Ltd Elektrostatische einspannvorrichtung fuer ein scheibenfoermiges substrat
US20020098072A1 (en) * 2001-01-19 2002-07-25 Applied Materials, Inc. Dual bladed robot apparatus and associated method
EP1391786A1 (fr) 2002-08-23 2004-02-25 ASML Netherlands B.V. Support, appareil lithographique et méthode de fabrication d'un dispositif
JP2008205509A (ja) * 2008-05-15 2008-09-04 Ulvac Japan Ltd 絶縁基板搬送方法、位置合わせ方法

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