WO2011069343A1 - Liquide de polissage chimio-mécanique utilisé pour le polissage des couches d'arrêt en tantale - Google Patents

Liquide de polissage chimio-mécanique utilisé pour le polissage des couches d'arrêt en tantale Download PDF

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Publication number
WO2011069343A1
WO2011069343A1 PCT/CN2010/002032 CN2010002032W WO2011069343A1 WO 2011069343 A1 WO2011069343 A1 WO 2011069343A1 CN 2010002032 W CN2010002032 W CN 2010002032W WO 2011069343 A1 WO2011069343 A1 WO 2011069343A1
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WO
WIPO (PCT)
Prior art keywords
mechanical polishing
chemical mechanical
polishing
acid
polishing liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2010/002032
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English (en)
Chinese (zh)
Inventor
姚颖
宋伟红
荆建芬
孙展龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anji Microelectronics Shanghai Co Ltd
Original Assignee
Anji Microelectronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai Co Ltd filed Critical Anji Microelectronics Shanghai Co Ltd
Publication of WO2011069343A1 publication Critical patent/WO2011069343A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Definitions

  • the present invention relates to a chemical mechanical polishing liquid for ruthenium barrier polishing, and more particularly to a chemical mechanical polishing liquid containing abrasive particles, an organic acid, a polyacrylic acid, a metal corrosion inhibitor, a quaternary amine base, an oxidizing agent and water.
  • the barrier layer becomes thinner and thinner. In the process below 90 nm, the thickness of the barrier layer is only 100 to 250 A.
  • the new insulating layer material and the capping layer are continuously applied to each.
  • Processes, such as low-k materials include materials such as BD (Black Diamond) and Coral that have been industrially applied. These materials have different chemical compositions and mechanical strengths.
  • the CMP of the barrier layer gradually increases the requirements for the polishing fluid to accommodate changes in its mechanical properties. For example, the polishing selectivity of various materials (especially the selection ratio of TEOS and low-k materials), the corrosion of metal materials and the uniformity of polishing are all challenges for the new generation of barriers. There is currently no industrial polishing solution that solves all of the above problems.
  • An acid barrier polishing solution for increasing the TEOS removal rate using a quaternary ammonium salt is disclosed in US20050031789, which has a better barrier removal rate, a lower copper removal rate and an adjustable TEOS removal rate. Effectively control copper by adjusting the content of hydrogen peroxide In addition to the rate, the polishing fluid lacks control of the removal rate of the low-k material.
  • CN02116761.3 discloses a chemical mechanical global planarization polishing liquid for copper and tantalum in a multi-scale integrated circuit multilayer copper wiring, the polishing liquid is alkaline, there is a problem that surface contaminants are difficult to control and a suitable oxidant is difficult to select.
  • U.S. Patent 6,638,326 uses ammonium nitrate or nitric acid as the oxidizing agent. Although the polishing rate selection ratio can be adjusted, there is a potential problem of metal corrosion.
  • the chemical mechanical polishing liquid of the invention has high removal rate of TEOS and low-k material (BD), and the removal rate of Cu can be adjusted by increasing or decreasing the content of the oxidant, which satisfies the insulating layer material during the polishing process of the barrier layer.
  • the chemical mechanical polishing liquid of the present invention can prevent local and overall corrosion problems occurring during metal polishing, and ensure that wafer surface defects and contaminants are small after polishing. Summary of invention
  • the technical problem solved by the invention is to meet the requirements of the barrier layer polishing process stage, improve the removal rate of the barrier layer (or >, meet the requirements of the selection ratio of the polishing layer material and the metal material polishing rate during the barrier layer polishing process, and prevent the metal Local and overall corrosion during polishing and reduces wafer surface defects and contaminants after polishing.
  • the chemical mechanical polishing liquid for bismuth barrier polishing of the present invention contains abrasive particles, an organic acid, a polyacrylic acid, a metal corrosion inhibitor, a quaternary amine base, an oxidizing agent and water.
  • the mass percentage of the abrasive particles is 1 to 10%
  • the mass percentage of the organic acid is 0.01 to 1%
  • the mass percentage of the polyacrylic acid is 0.01 ⁇ 0.2%
  • the metal corrosion inhibitor has a mass percentage of 0.01% to 1%
  • the quaternary ammonium base has a mass percentage of 0.01 to 0.2%
  • the oxidizing agent has a mass percentage of 0.001. ⁇ 1%
  • the balance is water.
  • the abrasive particles are selected from one or more of the group consisting of silica, alumina, cerium oxide, and/or polymer particles.
  • the abrasive particles have a particle diameter of 20 to 200 nm.
  • the organic acid is selected from the group consisting of oxalic acid, malonic acid, succinic acid, citric acid, butyl-1,2,4-tricarboxylic acid, hydroxyethylidene diphosphate, and aminotrimethylene.
  • oxalic acid malonic acid
  • succinic acid citric acid
  • butyl-1,2,4-tricarboxylic acid hydroxyethylidene diphosphate
  • aminotrimethylene aminotrimethylene.
  • One or more of a phosphatidyl acid and/or an amino acid is selected from the group consisting of oxalic acid, malonic acid, succinic acid, citric acid, butyl-1,2,4-tricarboxylic acid, hydroxyethylidene diphosphate, and aminotrimethylene.
  • the polyacrylic acid has a molecular weight of from 1,000 to 20,000, preferably from 2,000 to 5,000.
  • the metal corrosion inhibitor is an azole compound.
  • the azole compound is selected from the group consisting of benzotriazole, methylbenzotriazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, One or more of 4-amino-1, 2, 4 triazole and/or 5-methyl-tetrazole.
  • the quaternary ammonium base is tetramethylammonium hydroxide and/or tetrabutylammonium hydroxide.
  • the oxidizing agent is one or more selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, peracetic acid, benzoyl peroxide, potassium persulfate and/or ammonium persulfate.
  • the chemical mechanical polishing liquid has a pH of 2.0 to 5.0.
  • the chemical mechanical polishing liquid contains a surfactant, a stabilizer, and/or a bactericide.
  • the positive effects of the present invention are:
  • the polishing liquid of the present invention has a higher removal rate of the barrier material (Ta or TaN).
  • the polishing liquid of the present invention has a high removal rate of TEOS and low-k material (BD), and the removal rate of Cu can be increased or decreased by increasing or decreasing the content of the oxidant, thereby satisfying the barrier polishing process. Medium insulation material and metal polishing rate selection ratio requirements. 3.
  • the polishing liquid of the present invention can prevent local and overall corrosion generated during metal polishing and improve product yield.
  • the wafer After polishing with the polishing fluid of the present invention, the wafer has an intact surface topography and a low surface contamination residue.
  • Figure 1 is a SEM (Scanning Electron Microscope) image of the surface morphology of a wafer after polishing with a polishing solution of Comparative Example 1.
  • Fig. 2 is a SEM (Scanning Electron Microscope) image of the surface morphology of the wafer after polishing with the polishing liquid of Example 1. Summary of the invention
  • Table 1 shows the formulations of the chemical mechanical polishing liquids of the present invention in Examples 1 to 16 and Comparative Example 1, according to the components listed in Table 1 and their contents, uniformly mixed in deionized water, followed by potassium hydroxide and ammonia water.
  • the chemical mechanical polishing liquid of each example can be obtained by adjusting nitric acid to a suitable pH.
  • Example 7 Polyene ene oxide ⁇ eneene polyene oxide
  • Hinge hydroxide hydroxide hinge ammonium hydroxide butyl oxy ammonium hydroxide hydrogen oxyhydroxide ammonium hydroxide hydrogenation butyl tetrabutyl four four four four four four
  • Keiki amino, tribasic acid, hydroxyphosphoric acid, methylene sulfonate, bisphosphonate, succinic acid
  • the chemical mechanical polishing liquid of the present invention can obtain a higher removal rate of Ta, TEOS and BD than the polishing liquid of Comparative Example 1, and the polishing removal rate of copper can be adjusted by adjusting the concentration of the oxidizing agent. , meets the requirements of the polishing rate selection ratio of TEOS, BD and Cu during the barrier polishing process.
  • FIG. 1 and 2 are SEM images of the surface morphology of the test wafer after polishing with the polishing solution of Comparative Example 1 and the polishing liquid of Example 1, respectively, as can be seen from the comparison of FIG. 1 and FIG. 2, after polishing with the polishing liquid of the present invention.
  • the surface of the test wafer was smooth and flat, and no contaminating particles remained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un liquide de polissage chimio-mécanique utilisé pour le polissage des couches d'arrêt en tantale. Ce liquide de polissage contient des particules abrasives, un acide organique, des polyacryliques, un inhibiteur de la corrosion des métaux, une base de type ammonium quaternaire, un oxydant et de l'eau. Ce liquide de polissage peut satisfaire aux exigences de l'étape de polissage des couches d'arrêt, améliorer le taux d'élimination de la couche d'arrêt (Ta ou TaN), respecter les exigences en matière d'indice sélectif de taux de polissage d'un matériau formant une couche isolante pour égaler celui d'un matériau métallique durant le processus de polissage de la couche d'arrêt, prévenir la corrosion partielle et totale survenant durant le processus de polissage du matériau métallique et réduire les défauts superficiels et les contaminants à la surface d'une plaquette polie.
PCT/CN2010/002032 2009-12-11 2010-12-13 Liquide de polissage chimio-mécanique utilisé pour le polissage des couches d'arrêt en tantale Ceased WO2011069343A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910200316.4 2009-12-11
CN2009102003164A CN102093817A (zh) 2009-12-11 2009-12-11 一种用于钽阻挡抛光的化学机械抛光液

Publications (1)

Publication Number Publication Date
WO2011069343A1 true WO2011069343A1 (fr) 2011-06-16

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PCT/CN2010/002032 Ceased WO2011069343A1 (fr) 2009-12-11 2010-12-13 Liquide de polissage chimio-mécanique utilisé pour le polissage des couches d'arrêt en tantale

Country Status (2)

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CN (1) CN102093817A (fr)
WO (1) WO2011069343A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103160207A (zh) * 2011-12-16 2013-06-19 安集微电子（上海）有限公司 一种金属化学机械抛光浆料及其应用
CN103173127B (zh) * 2011-12-23 2016-11-23 安集微电子（上海）有限公司 一种用于硅通孔阻挡层平坦化的化学机械抛光液
CN103450810B (zh) * 2012-05-30 2018-03-13 安集微电子（上海）有限公司 一种化学机械平坦化浆料及其应用
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN103831706B (zh) * 2012-11-27 2018-02-09 安集微电子（上海）有限公司 一种化学机械抛光工艺
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN104745085B (zh) * 2013-12-25 2018-08-21 安集微电子（上海）有限公司 一种用于钴阻挡层抛光的化学机械抛光液
CN104745089A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种用于阻挡层平坦化的化学机械抛光液及其使用方法
CN104830235B (zh) * 2015-04-29 2017-06-23 清华大学 用于钴阻挡层结构化学机械抛光的抛光液及其应用
CN109971357B (zh) 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN110491790B (zh) * 2018-05-09 2021-11-09 台湾积体电路制造股份有限公司 半导体装置的制造方法

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CN101016440A (zh) * 2006-02-08 2007-08-15 罗门哈斯电子材料Cmp控股股份有限公司 多组分阻挡层抛光液
CN101041769A (zh) * 2006-03-23 2007-09-26 富士胶片株式会社 金属用研磨液
CN101108952A (zh) * 2006-07-21 2008-01-23 安集微电子（上海）有限公司 用于抛光低介电材料的抛光液
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
CN101511607A (zh) * 2005-06-06 2009-08-19 高级技术材料公司 整合的化学机械抛光组合物及单台板处理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
CN101511607A (zh) * 2005-06-06 2009-08-19 高级技术材料公司 整合的化学机械抛光组合物及单台板处理方法
CN101016440A (zh) * 2006-02-08 2007-08-15 罗门哈斯电子材料Cmp控股股份有限公司 多组分阻挡层抛光液
CN101041769A (zh) * 2006-03-23 2007-09-26 富士胶片株式会社 金属用研磨液
CN101108952A (zh) * 2006-07-21 2008-01-23 安集微电子（上海）有限公司 用于抛光低介电材料的抛光液

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