WO2011069500A2 - Procédé de production de cellules solaires et procédé de production de modules solaires - Google Patents

Procédé de production de cellules solaires et procédé de production de modules solaires Download PDF

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Publication number
WO2011069500A2
WO2011069500A2 PCT/DE2010/075145 DE2010075145W WO2011069500A2 WO 2011069500 A2 WO2011069500 A2 WO 2011069500A2 DE 2010075145 W DE2010075145 W DE 2010075145W WO 2011069500 A2 WO2011069500 A2 WO 2011069500A2
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Prior art keywords
semiconductor wafer
type
emitter
metal
electrodeposition
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German (de)
English (en)
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WO2011069500A3 (fr
Inventor
Til Bartel
Hans-Christoph Ploigt
Florian Stenzel
Andreas Mohr
Matthias Gundermann
Anke Zerres
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Q Cells SE
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Q Cells SE
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Priority to DE112010004698T priority Critical patent/DE112010004698A5/de
Publication of WO2011069500A2 publication Critical patent/WO2011069500A2/fr
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Publication of WO2011069500A3 publication Critical patent/WO2011069500A3/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing solar cells from semiconductor wafers. Furthermore, the invention relates to the production of
  • Electrode structure is difficult. This is especially the case when metal-containing pastes or inks are doped on the surface of a doped
  • Semiconductor for example, the emitter, applied and then baked.
  • the decisive parameter is the specific contact resistance of metallic structures on the semiconductor wafer.
  • d. H. at least partially highly doped semiconductors for example in the form of emitters with an impedance of up to 70 ohms / sq at a
  • the emitter can be made partially low-resistance at the locations where it is in contact with electrode structures (selective emitter).
  • this requires the use of
  • Electrode structures consist of, for example, building up the front-side electrode structure in a two-stage process.
  • a first stage is by means of screen printing, or other methods such as inkjet printing, aerosol printing, laser transfer method, tampon offset or
  • Dispensing method a metal-containing paste or ink applied in the form of a so-called seed layer structure.
  • This seed layer structure is baked in a subsequent thermal process step, which is often referred to in the jargon as firing. It arises then in
  • the following structures referred to as fired seed layers.
  • the surfaces of solar cells are usually provided with an antireflection layer and / or passivation layer. This consists for example of a silicon nitride thin film.
  • an antireflection layer and / or passivation layer This consists for example of a silicon nitride thin film.
  • Seed layer structure during firing at least partially penetrate these layers.
  • a glass frit and additives are provided in the pastes or inks applied to the front side of the semiconductor wafer. The glass frit and the additives are decisive for this
  • Seed layers reinforced by electrodeposited metal The result is a multi-layer electrode structure.
  • This electrodeposited metal has a significantly better transverse conductivity than the fired seed layers sintered together from the metal particles. It is also possible, the process step of the forming gas annealing after galvanic
  • silver-containing inks are used, which are applied as a seed layer structure using an aerosol printing process. After firing, the fired seed layers are cyanide-containing
  • Process step further costs and requirements in quality assurance.
  • the use of a cyanide-containing electroplating bath under disposal aspects is problematic and thus also costly.
  • the present invention is therefore based on the object to provide an improved multi-stage deposition method for multi-layer electrode structures on semiconductor wafers, which is as simple and inexpensive as possible. This object is achieved by a method having the features of
  • a semiconductor wafer having a front side and a back side selected from the group consisting of:
  • a p-type semiconductor wafer having a p-type base and having an n-type front-side emitter and an ohmicity greater than 70 ohms / sq, preferably greater than 90 ohms / sq, and more preferably greater than 110 ohms / sq and / or a surface concentration of less than 10 20 doping atoms / cm 3 , preferably less 5x10 19 dopant atoms / cm 3
  • an n-type semiconductor wafer having an n-type base, an n-type front side portion (having the same n-type doping as the n-type base or having an n + type doping) for frontally contacting the n-type base and a p-type emitter,
  • an n-type semiconductor wafer having an n-type base and a
  • an n-type semiconductor wafer having an n-type base and a
  • p-type emitter structure for backside contact or a p-type semiconductor wafer with a p-type base and an n-doped emitter structure for backside contact.
  • a seed layer structure for a multilayer electrode structure is applied on the front side or on the back side of the semiconductor wafer, which are present after a subsequent method step of firing the semiconductor wafer for baking the seed layer structure into fired seed layers for producing a multilayer electrode structure. Subsequently, metal is applied to the fired seed layers to produce a multilayer Electrode structure electrodeposited. A backside metallization for a backside electrode structure corresponding to the multilayered electrode structure is applied to the backside of the semiconductor wafer. The semiconductor wafer is not exposed to a reducing atmosphere at a temperature higher than 200 ° C between the firing step and the plating step or after the plating step.
  • the invention is based on the surprising knowledge that, after the firing step, fired seed layers which are electrically poorly contacted with the semiconductor wafer are significantly improved in their electrical contact properties by the electrodeposition process step. Previously, the opinion prevailed that on seed layers electrodeposited metal exclusively improves the so-called line conductivity of the electrodes. De facto, the
  • the process step of electrodeposition has a positive influence on the electrical contact between the seed layer and the underlying semiconductor.
  • a Formiergas- annealing step by a gaseous reducing agent at temperatures beyond 200 ° C supporting this effect is not necessary to produce the desired electrical contact properties (specific contact resistance ⁇ 10 mOhm cm 2 ).
  • the particles from a or more elemental metals are used, the particles from a or more elemental metals.
  • the paste or ink is formed for the most part as a glass frit.
  • the metal components would predominantly or exclusively be in the form of oxides or metal salts in the glass frit.
  • the resulting after firing electrical contact between the semiconductor and the fired seed layers is usually higher in such cases than if elemental metal particles are present and is only reduced by the process step of electrodeposition below 10 mOhm cm 2 .
  • the process step of applying a backside metallization to the backside electrode structure complementary to the multilayer electrode structure may be done before or after the electrodeposition step.
  • the back-side electrode structure it is of course possible that between the processing of the multi-layer electrode structure and the processing of the back-side electrode structure is a technically significant period of time. This may be the case, for example, when multilayer electrode structure and backside electrode structure are produced in spatially separate process plants. In the first-mentioned variant, it is possible for the back-side electrode structure to be processed before the seed layer structure is applied and then-and thus before the electrodeposition.
  • the multilayer electrode structure may be formed both as an emitter electrode and as a base electrode in relation to the semiconductor wafer. Likewise, it is conceivable for both variants that the multilayer electrode structure on the back or on the front of the
  • the unnecessary reducing atmosphere contains more than 0.5% and preferably more than 2% hydrogen.
  • the galvanic deposition in the form of a light-induced deposition method (Light Induced Plating, LIP) is performed.
  • LIP Light Induced Plating
  • the backside metallization of the semiconductor wafer is subjected to a defined electrical potential and simultaneously exposed to the front of a defined light radiation. Due to the fact that the semiconductor wafer is a solar cell structure used in the
  • Galvanleitersbad is arranged, flows a light-induced current, which also controls the metal deposition in Galvanmaschinesbad.
  • the electrodeposition is in a cyanide-free
  • cyanide-free is in the present case to be interpreted as meaning that no cyanide or no cyanide compounds are present in the form of traces except for impurities which are sometimes unavoidable
  • Galvanization be present.
  • a cyanide-free plating bath is much easier to handle and in the supply and disposal with regard to the problem of hazardous substances.
  • the cyanide-free plating bath is used in the form of an aqueous solution containing the metal ions, at least one water-soluble nitro-containing compound, at least one surfactant, at least one amido compound and at least one component selected from a water-soluble amino acid , a water-soluble sulfonic acid and mixtures thereof.
  • Such a plating bath is commercially available under the name Enlight TM 620 from Rohm 6t Haas Electronic Materials, of Marlborough, Massachusetts, USA.
  • Enlight TM 620 from Rohm 6t Haas Electronic Materials, of Marlborough, Massachusetts, USA.
  • An alternative is that under the
  • the metal ions in the present plating baths can be provided by using any suitable solution-soluble metal compound, typically a metal salt.
  • a suitable solution-soluble metal compound typically a metal salt.
  • Metal compounds may include without limitation:
  • metal halides metal halides; Metal nitrate; Metal carboxylates such as acetate, metal formate and metal gluconate; Metal amino acid complexes like
  • metal cysteine complexes for example, metal cysteine complexes; Metal alkyl sulfonates such as
  • metal methanesulfonate and metal ethanesulfonate for example, metal methanesulfonate and metal ethanesulfonate
  • Exemplary metal compounds include copper compounds,
  • Gold compounds nickel compounds, palladium compounds and
  • the metal compound is a silver compound
  • Metal compounds can be used in the present coating baths. Such mixtures may be metal compounds having the same metal but representing different compounds, such as a mixture of silver nitrate and silver cysteine complex, or metal compounds having various metals, such as a mixture of silver cysteine complex and copper gluconate. When various metal compounds having various metals are used in the mixture, the plating bath will deposit an alloy of various metals. The metal compounds are added to the plating bath in an amount sufficient to have a metal ion concentration in the plating bath of 0.1 to 60 g / L, more typically 0.5 to 50 g / L, and more typically 1 to 50 g / L to provide.
  • the concentration of silver ions in the bath is typically in an amount of from 2 to 40 g / l.
  • Such metal compounds are generally commercially available from a variety of sources such as Aldrich Chemical Company of Milwaukee, Wisconsin, USA.
  • the present plating baths contain an electrolyte.
  • electrolytes can be used in the present plating baths, including acids and bases.
  • exemplary electrolytes include without limitation alkanesulfonic acids such as methanesulfonic acid, ethanesulfonic acid and
  • Arylsulfonic acids such as toluenesulfonic acid, phenylsulfonic acid and phenolsulfonic acid
  • Amino-containing sulfonic acids such as sulfamic acid; sulfamic;
  • Halo acetic acids Hydrohalic acids
  • pyrophosphate pyrophosphate
  • salts of acids and bases can be used as the electrolyte.
  • the electrolyte may contain a mixture of acids, a mixture of bases or a mixture of one or more acids with one or more bases.
  • Such electrolytes are generally available from a variety of sources, such as Aldrich Chemical Company.
  • nitro-containing compounds in the present plating bath act to stabilize and complex the bath.
  • Any of a wide variety of water-soluble nitro-containing compounds in the present plating bath act to stabilize and complex the bath.
  • nitro-containing compounds include, without limitation, nitro-containing carboxylic acids and their salts and nitro-containing sulfonic acids and their salts.
  • nitro-containing carboxylic acids and their salts include, without limitation, nitro-containing carboxylic acids and their salts and nitro-containing sulfonic acids and their salts.
  • Compounds may contain one or more nitro groups.
  • the water-soluble nitro-containing compound typically has at least one heterocyclic group.
  • the nitro-containing group is an aromatic heterocyclic compound.
  • Exemplary Nitro-containing compounds include, without limitation, 2-nitrophthalic acid, 3-nitrophthalic acid, 4-nitrophthalic acid and / or m-nitrobenzenesulfonic acids.
  • the nitro-containing group is used in an amount of 0.1 to 200 g / L of the bath and more typically 0.5 to 175 g / L and more typically 1 to 150 g / L.
  • Such nitro-containing compounds are generally commercially available from a variety of sources such as Aldrich Chemical Company.
  • surfactants can be used in the present invention. Any anionic, cationic, amphoteric and
  • nonionic surfactants can be used.
  • exemplary nonionic surfactants include esters of succinic acid.
  • the surfactant is selected from cationic and amphoteric surfactants.
  • Exemplary cationic surfactants include, but are not limited to, 1,3-didecyl-2-methylimidazolium chloride available from Degussa under the tradename TEGOTAIN TM.
  • the surfactant is amphoteric, such as an alkyl betaine available from Degussa under the tradename TEGOTAIN TM.
  • Mixtures of surfactants can be used. Such surfactants are typically present in the plating bath in an amount of 0.1 to 5 g / l.
  • amido compounds can be found in the present
  • Compounds include without limitation sulfonic acid amides such as
  • succinic acid sulfamide and carboxylic acid amides for example, succinic acid sulfamide and carboxylic acid amides such as
  • succinamide (Succinamiddicare).
  • the amido compound is present in the coating baths in an amount of 0.01 to 150 g / L, typically 0.5 to 100 g / L and more typically 1 to 100 g / L.
  • Amido compounds are generally commercially available from a variety of sources, such as Aldrich Chemical Company.
  • amido compounds can be generated in situ from imides such as succinimide, for example. While not on As a theory, imides added to the alkaline bath at bath temperatures convert to their corresponding amido compounds. It is believed that this occurs through nucleophilic attack by hydroxyl ions (OH " ) on the carbon-nitrogen bond (CN) of the imide.
  • amino acid may be suitably used in the present coating baths, including derivatives of amino acids and salts of amino acids.
  • the amino acids of the present invention may contain one or more mercapto groups in addition to one or more amino groups.
  • suitable amino acids include, but are not limited to, glycine, alanine, cysteine, methionine, and 4-aminonicotinic acid.
  • an amino acid is used in the present coating baths, it is used in an amount of 0.1 to 150 g / L, more typically 0.5 to 150, and even more typically 0.5 to 125 g / L.
  • Mixtures of amino acids can be used.
  • Such metal compounds are generally commercially available from a variety of sources such as Aldrich Chemical Company. When the metal is silver, the water-soluble amino acid is typically present in excess of the stoichiometric amount of silver.
  • sulfonic acids include any of the sulfonic acids described above for the electrolyte
  • the electrolyte When a sulfonic acid is used as the electrolyte, no additional sulfonic acid is required. Typically, the sulfonic acid is present in an amount of from 0.1 to 200 g / L.
  • the present coating baths may contain one or more additional components.
  • additional components include, without limitation, brighteners, grain refining additives,
  • Sulfone-containing compounds can be used as brighteners.
  • suitable sulfone-containing compounds contain one or two aromatic rings on the sulfone group. Such aromatic rings may optionally be substituted with one or two substituents selected from nitro, amino, halo, alkyl and metals.
  • the sulfone-containing compound is typically contained in an amount of 0.001 to 5 g / l of the plating bath.
  • Anti-corrosion agents include, without limitation, triazoles, benzotriazoles, tetrazoles, imidazoles, benzimidazoles, and indazoles.
  • Particularly useful anticorrosion agents include (C Ci 6 ) alkylimidazoles and arylimidazoles.
  • Exemplary corrosion inhibitors include methylimidazole, ethylimidazole, propylimidazole, hexylimidazole, decylimidazole, undecylimidazole, 1-phenylimidazole, 4-phenylimidazole, hydroxybenzotriazole, aminobenzotriazole, 2-imidazolecarboxaldehyde, benzotriazolecarboxylic acid, 2-guanidinebenzimidazole, 2-aminoindazole, chlorobenzotriazole, hydroxyethylbenzotriazole , Hydroxyethylimidazole, hydroxybenzimidazole and 1,2,4-triazole, but are not limited thereto. Blends of corrosion inhibitors may be used to advantage in the present coating baths. In general, when a corrosion inhibitor is used, it is present in an amount of 0.005 to 50 g / l.
  • the cyanide-free plating bath preferably has a buffering agent which has the plating bath at a pH of from 7 to 14, preferably at a pH of between 8 and 12, and more preferably at a pH of between 9.5 and 10.5 maintains.
  • Exemplary buffering agents include, but are not limited to, borate buffers (such as borax), phosphate buffers, citrate buffers, and carbonate buffers.
  • borate buffers such as borax
  • phosphate buffers citrate buffers
  • carbonate buffers The amount of buffer used is the amount sufficient to maintain the pH of the plating bath at a desired level to maintain such an amount well known to those skilled in the art.
  • an additional metal may optionally be added to the plating bath. Any suitable additional metal may be used. Such additional metals are well known to those skilled in the art.
  • the present coating baths typically have a pH in the range of 7 to 14, more typically 7 to 12, and more typically 9 to 12.
  • the operating temperature of the present coating baths is typically in the range of 10 to 45 ° C.
  • the working temperature is typically in the range of 20 to 40 ° C and more typically 33 to 38 ° C.
  • a cooler is
  • the cyanide-free metal plating baths used in the present invention have sufficient stability under the lighting conditions used in photo-assisted plating to provide metal deposits on semiconductor wafers for solar cells that meet desired requirements.
  • the present metal plating bath has ecological advantages over conventional photo-induced plating baths because the present invention
  • Coating bath is cyanide-free. Another advantage of the present invention is that high performance outputs are also applied to the
  • the present coating baths are sufficiently stable to permit their use.
  • the plating bath is maintained at a temperature of between 25 and 45 ° C., preferably between 30 and 40 ° C. and more preferably between 33 and 37 ° C.
  • the metal concentration of the plating bath is maintained in the range of 10 to 30 g / l, preferably in the range of 15 to 25 g / l, and more preferably in the range of 18 to 22 g / l.
  • an advantageous variant of the method provides that the back-side metallization of the semiconductor wafer during galvanic deposition in the form of a light-induced deposition method at a potential of 0.1 to 2.4 volts, preferably from 0.3 to 1, 2 volts and especially is preferably maintained from 0.3 to 0.8 volts.
  • Galvanizing bath of 4 to 12 minutes preferably carried out from 6 to 10 minutes.
  • the electrodeposited metal is selected from a group comprising silver, copper, gold, nickel, titanium and palladium.
  • the seed layers are applied by means of a screen printing step using a silver-containing full-composition paste having an aspect ratio (height to width ratio) of 0.5 to 0.02, preferably 0.2 to 0, 05 and more preferably from 0.11 to 0.09 guaranteed.
  • Exemplary are the pastes with the designation Sol950 and Sol953 of the company Heraeus; 6440 and 6449 from Cermet; SR3906 of the company Namics; DD1200 of the company Kyoto Elex; PV145, PV159 and PV173 (Pb-free) from Dupont; 33-502 and 33-642 of the company called Ferro.
  • An advantageous variant of the method provides that on the n-type semiconductor wafer with the p-type front emitter the seed layers are applied by means of a silver-containing paste or ink which is less than 5%, preferably less than 2% and particularly preferably less than 0, Contains 2% aluminum.
  • a further preferred variant of the method provides for the application of the seed layers of a paste or an ink having a content of particles of elemental metal of less than 5%, preferably less than 1% and more preferably less than 0.5 % and is composed mainly of a glass frit.
  • the glass frit may contain metals in the form of oxides or other metal salts.
  • the fired seed layers down to a boundary layer to the semiconductor wafer are etched down.
  • This can be done for example by a wet-chemical etching step, for example with nitric acid.
  • etching with nitric acid it is also possible to etch the glass layers of the fired seed layers, for example using HF. This can cause the fired seed layers to be released from the semiconductor wafer. This leaves metal parts at the boundary layer to the semiconductor wafer. These serve, as well as the glassy boundary layer (in the case of etching with
  • Nitric acid as a starting point for the subsequent galvanic metal deposition.
  • the invention relates to a method for producing a
  • FIG. 1 shows by way of example two variants of the invention
  • Seed layer structure 4a arranged. This seed layer structure 4a is brought to the surface by means of a printing process of a metal-containing ink or paste.
  • Region B shows the semiconductor wafer from region A after the firing step.
  • Antireflection layer / passivation layer 3 penetrated and has a
  • FIG. 1 shows an idealized representation. It is also conceivable that the fired seed layer 4b has only partially penetrated the antireflection layer / passivation layer 3. Furthermore, it may well occur in practice that the antireflection layer / passivation layer 3 is also attacked and partially dissolved adjacent to the fired seed layer 4a.
  • the solvents originally present in the seed layer structure 4a have volatilized with the firing and are the metal particles
  • the fired seed layer 4b is slightly smaller and denser than before firing.
  • the area C shows a variant of the method. For example, by
  • wet-chemical etching with nitric acid can be the fired seed layer 4 b to remove a contact layer on the surface of the front emitter 2.
  • a glassy phase is present, which is not attacked by the nitric acid, so that even underneath metal or metal crystallites remain present at the transition to the emitter. If the fired seed layer 4b has the Antireflective layer / passivation layer 3 is not completely penetrated, so would be exposed after etching with nitric acid this previously uncovered by the fired seed layer 4a remains of the layer 3 following the etching step.
  • an etching step with hydrofluoric acid can be carried out.
  • the hydrofluoric acid would not etch the silver but the glass phase present in the border region to the front emitter 2. This can cause the fired seed layer 4b to peel off the semiconductor wafer. Under the glass phase there are exposed emitters as well as possibly metal crystallites, which lie in the border area to the front emitter and are not attacked by the hydrofluoric acid. On this can then be electrodeposited metal for the front electrode structure.
  • region D the semiconductor wafer with the constellation from region B or from region C is introduced into a galvanic bath not shown here.
  • a light-induced deposition method is used, the principle of action has been briefly described above.
  • a layer of electrodeposited metal 4c preferably silver, is applied to the fired seed layer 4b to reinforce the fired seed layer 4b.
  • electroplating such positive influence on the electrical contact of the fired
  • Seed layer 4b exerts that the hitherto regularly applied Formiergas- annealing can be omitted in a reducing hydrogen atmosphere.
  • FIG. 1 shows in region D an idealized representation. Really, the electrodeposited metal will also overlap adjacent areas of the antireflection layer / passivation layer 3.
  • FIG. 2 shows the result of simulation calculations of the series resistance Rs of a solar cell plotted against the y-axis versus the impedance Rsheet of the p-emitter of the semiconductor wafer used, which is plotted on the x-axis.
  • the series resistor R s is composed of the Contact resistance (10) of the electrodes to the semiconductor material, the to be overcome by the charge carriers in the emitter material sheet resistance (1 1), which experienced by the electrons along the electrode structures
  • FIG. 2 shows the state after the firing of the seed layer.
  • FIG. 3 shows the same representation of the parameters from FIG. 2, wherein the state after the galvanic metal deposition treatment of the seed layer is now shown. Most notable is the extreme decrease in contact resistance (1 0) for high resistance (> 70 ohms / sq) semiconductor wafer as experimentally proven.
  • the line resistance (12) has the good electrical conductivity of the galvanic
  • FIG. 4 shows measured values.
  • the round dots represent the measured values of the series resistance R s after firing the seed layer

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de production de cellule solaire comprenant les étapes suivantes : fourniture d'une plaquette semiconductrice ayant une face avant et une face arrière, sélectionnée dans le groupe comprenant une plaquette semiconductrice de type p ayant une base de type p et un émetteur dopé n en face avant de résistance supérieure à 70 ohms/carré, de préférence supérieure à 90 ohms/carré, de manière particulièrement préférée supérieure à 110 ohms/carré et/ou de concentration superficielle inférieure à 1020 atomes dopants/cm3, de préférence inférieure à 5x1019 atomes dopants/cm3, une plaquette semiconductrice de type n ayant une base de type n, un segment de type n sur la face avant pour la mise en contact par la face avant de la base de type n et un émetteur de type p, une plaquette semiconductrice de type n ayant une base de type n et un émetteur dopé p en face avant de résistance supérieure à 40 ohms/carré et une plaquette semiconductrice de type n ayant une base de type n et une structure émetteur dopée p pour la mise en contact par la face arrière ou une plaquette semiconductrice de type p ayant une base de type p et une structure émetteur dopée n pour la mise en contact par la face arrière; application d'une structure de couche de germination (4a) pour une structure d'électrode multicouche sur la face avant ou la face arrière de la plaquette semiconductrice; recuit de la plaquette semiconductrice pour diffuser la structure de couche de germination (4a) en couches de germination recuites (4b); dépôt galvanique de métal sur les couches de germination recuites (4b) pour créer une structure d'électrode multicouche (4b, 4c); application d'une métallisation de face arrière pour une structure d'électrode de face arrière correspondant à la structure d'électrode multicouche sur la face arrière de la plaquette semiconductrice. Selon l'invention, la plaquette semiconductrice n'est soumise à une atmosphère réductrice à une température supérieure à 200 °C ni entre l'étape de recuit et l'étape de dépôt galvanique, ni après l'étape de dépôt galvanique, ce qui permet la production d'un contact électrique de facteur de qualité <10 milliohms cm2 uniquement par dépôt galvanique d'un métal sur une plaquette semiconductrice de valeur ohmique élevée (> 70 ohms/carré), par exemple.
PCT/DE2010/075145 2009-12-08 2010-11-25 Procédé de production de cellules solaires et procédé de production de modules solaires Ceased WO2011069500A2 (fr)

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DE102009044823A DE102009044823A1 (de) 2009-12-08 2009-12-08 Verfahren zur Herstellung von Solarzellen und Verfahren zur Herstellung von Solarmodulen

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DE102012205498A1 (de) * 2012-04-04 2013-10-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zum Herstellen eines elektrischen Kontaktes auf einer solchen
DE102013221941A1 (de) 2013-10-29 2015-04-30 SolarWorld Industries Thüringen GmbH Verfahren zur Kontaktierung einer Solarzelle sowie eine Solarzelle hergestellt mit einem solchen Verfahren

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US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
US20080035489A1 (en) * 2006-06-05 2008-02-14 Rohm And Haas Electronic Materials Llc Plating process
DE102007031958A1 (de) * 2007-07-10 2009-01-15 Deutsche Cell Gmbh Kontakt-Struktur für ein Halbleiter-Bauelement sowie Verfahren zur Herstellung desselben
US20090120497A1 (en) * 2007-11-09 2009-05-14 Schetty Iii Robert A Method of metallizing solar cell conductors by electroplating with minimal attack on underlying materials of construction

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HÖRTEIS ET AL.: "Fine Line Printed Silicon Solar Cells Exceeding 20% Efficiency", PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATION, vol. 16, 2008, pages 555 - 560

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DE102009044823A1 (de) 2011-06-09
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