WO2011148559A1 - Appareil de séparation de plaquettes de semi-conducteur - Google Patents

Appareil de séparation de plaquettes de semi-conducteur Download PDF

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Publication number
WO2011148559A1
WO2011148559A1 PCT/JP2011/002079 JP2011002079W WO2011148559A1 WO 2011148559 A1 WO2011148559 A1 WO 2011148559A1 JP 2011002079 W JP2011002079 W JP 2011002079W WO 2011148559 A1 WO2011148559 A1 WO 2011148559A1
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WO
WIPO (PCT)
Prior art keywords
wafers
wafer
cut
ingot
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/002079
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English (en)
Japanese (ja)
Inventor
保 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etsystem Engineering Co Ltd
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Etsystem Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etsystem Engineering Co Ltd filed Critical Etsystem Engineering Co Ltd
Publication of WO2011148559A1 publication Critical patent/WO2011148559A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work

Definitions

  • the present invention relates to an apparatus for separating a block-shaped ingot such as polycrystalline silicon into wafers having a predetermined thickness and separating them one by one.
  • a manufacturing method of a silicon wafer used for a solar cell substrate or the like is such that a block-shaped polycrystalline silicon ingot is fixed to a pedestal or the like via an adhesive.
  • the ingot is sliced into a wafer having a predetermined thickness by a wire saw or an annular cutter having a diamond blade formed on the inner periphery, and then immersed in a stripping solution to separate the wafer from the pedestal.
  • non-patent document 1 proposes the following separation methods (1) to (3).
  • (1) A method of setting ingots after slicing in a jet and paying out one by one from the uppermost wafer using a suction pad.
  • (2) A method of immersing sliced ingots in water in which microbubbles are generated, allowing microbubbles to enter between the wafers, and using a roller to dispense one by one from the uppermost wafer.
  • this After slicing the ingot, this is set obliquely, the angle and the thickness of the wafer are measured, and the first wafer is dispensed using the suction pad while the second wafer is held by the stopper.
  • Non-Patent Document 1 the wafer is damaged by a large force acting on the wafer, or a plurality of sheets are separated at the same time. Many problems have not been solved, such as the time until the time is not constant.
  • a separation apparatus is a semiconductor wafer which is fixed to a holder via an adhesive and separates semiconductor ingots cut into wafers of a predetermined thickness by a cutting jig one by one. And a separation tank filled with a separation liquid in which fine particles entering between the wafers float, and in the separation tank, both sides of the cut semiconductor ingot are pressed by an elastic body.
  • a holding plate that keeps the gap between them constant, a boat that is mounted with the cut semiconductor ingot and that is rotatable between a horizontal state and a vertical state, and a boat that is mounted on the vertical state boat
  • An elevating device is provided for raising the semiconductor ingot one wafer at a time, and a pickup transport mechanism is provided adjacent to the separation tank.
  • a structure which the brush roller is provided for wiping the underside of the wafer is conveyed in the direction opposite to the conveying direction.
  • the particle is not particularly limited as long as it is a particle having a diameter that can penetrate between the cut wafers, but considering the ease of handling without scratching the wafer surface, it is made of resin, glass, ceramic, etc. In addition, those having no corners and being nearly spherical are preferable.
  • the liquid for suspending the fine particles is water or a conventional separation liquid. Further, by circulating the liquid in which the fine particles are suspended, the fine particles easily enter between the cut wafers. Instead of circulating the liquid, the cut wafer may be reciprocated together with the ingot.
  • the wafers separated by the intrusion of fine particles are stacked in the vertical direction and sequentially from the top wafer using a pickup jig such as a suction pad. At this time, by wiping the lower surface of the uppermost wafer with a brush in the direction opposite to the removal direction, it is possible to prevent the two wafers from being overlapped and to remove fine particles adhering to the lower surface.
  • the cut wafers can be reliably separated and dispensed one by one.
  • the rate of breakage of the wafer during separation is extremely small, and the time required for separation can be made constant and shortened.
  • the front view of the apparatus used for implementation of the wafer separation method concerning the present invention Plan view of the device AA arrow view of FIG. BB direction view of FIG. (A) is the figure explaining the cutting process by a wire saw, (b) is a perspective view of the ingot after a cutting
  • the figure explaining the state in the separation tank which dipped the ingot after cutting A diagram explaining the state of fine particles entering between wafers The figure explaining the process until the wafer is separated and stored in the cassette Enlarged view of the part separating the wafers
  • the separation device has a pickup transport mechanism 2 disposed adjacent to the separation tank 1, a storage cassette 3 disposed adjacent to the pickup transport mechanism 2, and the storage cassette 3 is moved up and down at a predetermined pitch by the lifting device 4. I have to.
  • a boat 5 for placing an ingot In such as polycrystalline silicon after cutting is disposed in the separation tank 1, a boat 5 for placing an ingot In such as polycrystalline silicon after cutting is disposed.
  • one surface of the ingot In is fixed to the holder 6 via an adhesive, and in this state, the ingot In is cut to a predetermined thickness using a cutting jig such as a wire saw 7. In this case, it is possible to cut completely by cutting to the position where it hangs on the holder 6.
  • the boat 5 is rotatable about a shaft 8 and is driven from a horizontal state by driving a motor or the like. Further, a lifting device 9 is disposed below the standing boat 5. Thus, the wafers W stacked in the vertical direction are raised one by one.
  • a pusher 10 is disposed along the separation tank 1.
  • the pusher 10 presses a cut ingot In placed on a horizontal boat 5 against an end plate of the boat, and is capable of reciprocating along a rail 11.
  • the separation tank 1 is filled with a heated separation liquid, and a pipe 12 for circulating the separation liquid is provided in the separation tank 1, and fine particles P are added to the middle of the pipe 12.
  • a portion 13 is provided.
  • the fine particles P resin, glass, or ceramic beads are used, and the average diameter is a diameter that can enter between the cut wafers.
  • an ultrasonic vibration device 14 or a bubbling device for agitating the separation liquid is attached to the inner wall of the separation tank 1, and the both sides of the ingot In after being cut in the separation tank 1 are pressed by the presser plates 15 after being cut.
  • the gap between the wafers is kept constant.
  • an elastic body is attached to the presser plate 15, and this elastic body is brought into contact with the ingot In.
  • the pickup transport mechanism 2 sucks and lifts the tip of the uppermost wafer of the ingot In after being set in the standing boat 5 and a rail 17 on which the suction pad 16 reciprocates.
  • the brush roller 19 rotates in a direction opposite to the conveyance direction of the wafer W by the suction pad 16. As a result, the fine particles P adhering to the lower surface of the wafer W are removed. Further, since the brush roller 19 rotates in the direction opposite to the conveyance direction, even when two uppermost wafers are overlapped, they can be separated.
  • one surface of the ingot In is fixed to the holder 6 via an adhesive such as wax, and in this state, the ingot In is cut into a wafer having a predetermined thickness using the wire saw 7. .
  • the state after cutting is shown in FIG.
  • the both sides of the cut ingot In are immersed in the separation tank 1 while being held by the pressing plate 15. Since the temperature of the separation liquid (hot water) in the separation tank 1 is about 80 ° C., the wax (adhesive) between the holder 6 and the ingot In dissolves, and vibration from the ultrasonic vibration device 14 or the bubbling device. Therefore, the holder 6 is easily detached from the ingot In. Even when the lower surface of the ingot In is held by the holder 6, the holder 6 is similarly detached from the ingot In.
  • the separation liquid containing the fine particles P circulates in the separation tank 1, sludge such as coolant and chips existing between the cut wafers is removed from the gap between the wafers, and the separation tank 1 is discharged as a slurry from the bottom surface.
  • the ingot In from which the holder 6 is removed is pressed against the end plate of the boat 5 by the pusher 10. Then, as shown in FIG. 8, the boat 5 is rotated 90 ° about the shaft 8 to be in a vertical state.
  • the wafers W cut in this state are stacked in the vertical direction, and fine particles P are interposed between the wafers.
  • the lifted device 9 raises the cut ingot In placed on the boat 5 to a predetermined position, and as shown in FIG. 9, the tip of the uppermost wafer W is sucked by the suction pad 16 and sucked.
  • the pad 16 is moved in the horizontal direction and the uppermost wafer W is transferred to the conveyor belt 18.
  • the separated wafer W is inserted and held by a conveyor belt 18 in a horizontal slit formed on the inner wall of the storage cassette 3.
  • the storage cassette 3 moves up or down by one stage (slit interval), and a predetermined number (usually 100) of wafers W are stored in the storage cassette 3 at regular intervals. .
  • the method for separating a semiconductor wafer according to the present invention can be used for separating a normal substrate for an integrated circuit, a solar cell substrate, and the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

Cette invention concerne un procédé de séparation de plaquettes de semi-conducteur qui permet de séparer faiblement les plaquettes les unes des autres après leur découpage sans casser lesdites plaquettes pendant leur séparation. Un liquide de séparation contenant de fines particules (P) circule dans un bain de séparation (1) de sorte à éliminer le coulis d'un agent de refroidissement, les poussières de coupe et similaires des espaces entre les plaquettes découpées, et le coulis est éliminé en tant que boue résiduelle à partir de la surface inférieure du bain de séparation (1). En outre, pendant que le coulis est éliminé d'entre les plaquettes, les particules fines (P) pénètrent entre les plaquettes et y restent. Ainsi, les plaquettes sont empêchées de coller l'une à l'autre et les espaces sont préservés.
PCT/JP2011/002079 2010-05-28 2011-04-07 Appareil de séparation de plaquettes de semi-conducteur Ceased WO2011148559A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-122586 2010-05-28
JP2010122586A JP4668350B1 (ja) 2010-05-28 2010-05-28 半導体ウェーハの分離装置

Publications (1)

Publication Number Publication Date
WO2011148559A1 true WO2011148559A1 (fr) 2011-12-01

Family

ID=44021702

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/002079 Ceased WO2011148559A1 (fr) 2010-05-28 2011-04-07 Appareil de séparation de plaquettes de semi-conducteur

Country Status (2)

Country Link
JP (1) JP4668350B1 (fr)
WO (1) WO2011148559A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020053610A (ja) * 2018-09-28 2020-04-02 住友金属鉱山株式会社 ウエハの製造方法、及び、ウエハの押さえ治具
CN112847851A (zh) * 2020-12-31 2021-05-28 常州时创能源股份有限公司 一种单晶硅棒的加工方法、硅片、电池片和光伏组件
CN115972418A (zh) * 2023-03-20 2023-04-18 西安中威新材料有限公司 晶圆扩散用的碳化硅陶瓷晶舟开齿设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185830A (ja) * 2014-03-26 2015-10-22 株式会社巴川製紙所 ワイヤーソーダイシング法用の仮固定用接着部材、およびワイヤーソーダイシング法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457730A (en) * 1987-08-28 1989-03-06 Tel Sagami Ltd Wafer shifting method
JPS6489388A (en) * 1987-09-29 1989-04-03 Matsushita Electric Industrial Co Ltd Board cleaning device
JPH01304732A (ja) * 1988-06-01 1989-12-08 Nec Corp 半導体ウェハの洗浄装置
JPH09237770A (ja) * 1995-12-25 1997-09-09 Nippei Toyama Corp ウエハの処理システム
JPH09326374A (ja) * 1996-06-04 1997-12-16 Mitsubishi Materials Corp ウェハの剥離方法および装置
JPH11274271A (ja) * 1998-03-24 1999-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2008545268A (ja) * 2005-07-01 2008-12-11 アール・イー・シー・スキャンウェハー・アー・エス シリコンウエハ間の引力の低減

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275582A (ja) * 1993-03-18 1994-09-30 Sumitomo Electric Ind Ltd ウエハ加工装置
JPH08172065A (ja) * 1994-12-16 1996-07-02 Shibayama Kikai Kk 半導体ウエハの塵埃の除去方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457730A (en) * 1987-08-28 1989-03-06 Tel Sagami Ltd Wafer shifting method
JPS6489388A (en) * 1987-09-29 1989-04-03 Matsushita Electric Industrial Co Ltd Board cleaning device
JPH01304732A (ja) * 1988-06-01 1989-12-08 Nec Corp 半導体ウェハの洗浄装置
JPH09237770A (ja) * 1995-12-25 1997-09-09 Nippei Toyama Corp ウエハの処理システム
JPH09326374A (ja) * 1996-06-04 1997-12-16 Mitsubishi Materials Corp ウェハの剥離方法および装置
JPH11274271A (ja) * 1998-03-24 1999-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2008545268A (ja) * 2005-07-01 2008-12-11 アール・イー・シー・スキャンウェハー・アー・エス シリコンウエハ間の引力の低減

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020053610A (ja) * 2018-09-28 2020-04-02 住友金属鉱山株式会社 ウエハの製造方法、及び、ウエハの押さえ治具
JP7176327B2 (ja) 2018-09-28 2022-11-22 住友金属鉱山株式会社 ウエハの製造方法、及び、ウエハの押さえ治具
CN112847851A (zh) * 2020-12-31 2021-05-28 常州时创能源股份有限公司 一种单晶硅棒的加工方法、硅片、电池片和光伏组件
CN115972418A (zh) * 2023-03-20 2023-04-18 西安中威新材料有限公司 晶圆扩散用的碳化硅陶瓷晶舟开齿设备

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JP2011249640A (ja) 2011-12-08
JP4668350B1 (ja) 2011-04-13

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