WO2012006991A3 - Halbleiterbauelement und verfahren zur herstellung desselben - Google Patents

Halbleiterbauelement und verfahren zur herstellung desselben Download PDF

Info

Publication number
WO2012006991A3
WO2012006991A3 PCT/DE2011/001173 DE2011001173W WO2012006991A3 WO 2012006991 A3 WO2012006991 A3 WO 2012006991A3 DE 2011001173 W DE2011001173 W DE 2011001173W WO 2012006991 A3 WO2012006991 A3 WO 2012006991A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor chip
finger
type connecting
semiconductor element
connecting webs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2011/001173
Other languages
English (en)
French (fr)
Other versions
WO2012006991A2 (de
Inventor
Michael Bragard
Rik De Doncker
Florian Mura
Christian Dick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rheinisch Westlische Technische Hochschuke RWTH
Original Assignee
Rheinisch Westlische Technische Hochschuke RWTH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rheinisch Westlische Technische Hochschuke RWTH filed Critical Rheinisch Westlische Technische Hochschuke RWTH
Priority to EP11791422.6A priority Critical patent/EP2577725A2/de
Publication of WO2012006991A2 publication Critical patent/WO2012006991A2/de
Publication of WO2012006991A3 publication Critical patent/WO2012006991A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/73—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control for cooling by change of state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07235—Applying EM radiation, e.g. induction heating or using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07254—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/247—Dispositions of multiple bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

Die Erfindung betrifft ein Halbleiterbauelement mit wenigstens einem Halbleiterchip (2), mit an zwei Flachseiten (3, 4) des Halbleiterchips angeordneten, die Flachseiten des Halbleiterchips zumindest abschnittsweise überdeckenden Kontaktierungsschichten (5, 6) und mit wenigstens einem einer ersten Flachseite des Halbleiterchips beabstandet zugeordneten Metallkörper (7, 8), welcher über von der ersten Flachseite zugeordneten Kontaktierungsschicht abragende, fingerartige Verbindungsstege (9) thermisch und elektrisch leitend mit dem Halbleiterchip verbunden ist, wobei die fingerartigen Verbindungsstege beabstandet zueinander angeordnet sind und dass die fingerartigen Verbindungsstege monolithisch mit der Kontaktierungsschicht verbunden sind.
PCT/DE2011/001173 2010-06-02 2011-05-30 Halbleiterbauelement und verfahren zur herstellung desselben Ceased WO2012006991A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP11791422.6A EP2577725A2 (de) 2010-06-02 2011-05-30 Halbleiterbauelement und verfahren zur herstellung desselben

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010029650.3 2010-06-02
DE102010029650A DE102010029650A1 (de) 2010-06-02 2010-06-02 Halbleiterbauelement und Verfahren zur Herstellung desselben

Publications (2)

Publication Number Publication Date
WO2012006991A2 WO2012006991A2 (de) 2012-01-19
WO2012006991A3 true WO2012006991A3 (de) 2012-05-31

Family

ID=44973868

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/001173 Ceased WO2012006991A2 (de) 2010-06-02 2011-05-30 Halbleiterbauelement und verfahren zur herstellung desselben

Country Status (3)

Country Link
EP (1) EP2577725A2 (de)
DE (1) DE102010029650A1 (de)
WO (1) WO2012006991A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015115312B4 (de) * 2015-09-10 2020-10-29 Infineon Technologies Ag Halbleitermodul und Verfahren zum Betrieb eines Halbleitermoduls
CN109906508A (zh) 2016-11-08 2019-06-18 三菱电机株式会社 半导体模块及半导体装置
DE102017217406A1 (de) * 2017-09-29 2019-04-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bauelement und Verfahren zu dessen Herstellung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510650A (en) * 1994-09-02 1996-04-23 General Motors Corporation Low mechanical stress, high electrical and thermal conductance semiconductor die mount
US20030211657A1 (en) * 2000-02-10 2003-11-13 Williams Vernon M. Stereolithographic method for fabricating heat sinks, stereolithographically fabricated heat sinks, and semiconductor devices including same
EP2061078A1 (de) * 2007-11-16 2009-05-20 IQ evolution GmbH Kühlkörper
US20090316360A1 (en) * 2008-06-20 2009-12-24 International Business Machines Corporation Cooling apparatus and method of fabrication thereof with a cold plate formed in situ on a surface to be cooled

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2981586B2 (ja) * 1993-10-15 1999-11-22 ダイヤモンド電機株式会社 ヒートシンク
JP4613077B2 (ja) * 2005-02-28 2011-01-12 株式会社オクテック 半導体装置、電極用部材および電極用部材の製造方法
US7749812B2 (en) * 2007-08-06 2010-07-06 International Business Machines Corporation Heat sink with thermally compliant beams

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510650A (en) * 1994-09-02 1996-04-23 General Motors Corporation Low mechanical stress, high electrical and thermal conductance semiconductor die mount
US20030211657A1 (en) * 2000-02-10 2003-11-13 Williams Vernon M. Stereolithographic method for fabricating heat sinks, stereolithographically fabricated heat sinks, and semiconductor devices including same
EP2061078A1 (de) * 2007-11-16 2009-05-20 IQ evolution GmbH Kühlkörper
US20090316360A1 (en) * 2008-06-20 2009-12-24 International Business Machines Corporation Cooling apparatus and method of fabrication thereof with a cold plate formed in situ on a surface to be cooled

Also Published As

Publication number Publication date
EP2577725A2 (de) 2013-04-10
DE102010029650A1 (de) 2011-12-08
WO2012006991A2 (de) 2012-01-19

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