WO2012052257A3 - Optoelektronischer halbleiterchip und verfahren zu dessen herstellung - Google Patents

Optoelektronischer halbleiterchip und verfahren zu dessen herstellung Download PDF

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Publication number
WO2012052257A3
WO2012052257A3 PCT/EP2011/066687 EP2011066687W WO2012052257A3 WO 2012052257 A3 WO2012052257 A3 WO 2012052257A3 EP 2011066687 W EP2011066687 W EP 2011066687W WO 2012052257 A3 WO2012052257 A3 WO 2012052257A3
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layer
semiconductor chip
stack
conductivity
rear side
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Ceased
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PCT/EP2011/066687
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English (en)
French (fr)
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WO2012052257A2 (de
Inventor
Werner Bergbauer
Patrick Rode
Martin Strassburg
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to US13/825,842 priority Critical patent/US8823034B2/en
Publication of WO2012052257A2 publication Critical patent/WO2012052257A2/de
Publication of WO2012052257A3 publication Critical patent/WO2012052257A3/de
Anticipated expiration legal-status Critical
Priority to US14/447,679 priority patent/US9136431B2/en
Priority to US14/818,630 priority patent/US9293652B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped

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Abstract

Es ist ein optoelektronischer Halbleiterchip (10) mit einem Halbleiterschichtenstapel (1) aus einem nitridischen Verbindungshalbleitermaterial auf einem Trägersubstrat (2) angegeben, wobei das Trägersubstrat (2) eine Oberfläche (2a) aufweist, die Silizium enthält. Der Halbleiterschichtenstapel (1) weist eine Ausnehmung (3) auf, die sich von einer Rückseite (1e) des Halbleiterschichtenstapels (1) durch eine aktive Schicht (1a) zu einer Schicht (1b) eines ersten Leitfähigkeitstyps erstreckt. Die Schicht (1b) des ersten Leitfähigkeitstyps ist mittels einer ersten elektrischen Anschlussschicht (4), welche die Rückseite (1e) zumindest stellenweise bedeckt, durch die Ausnehmung (3) hindurch elektrisch angeschlossen. Eine Schicht (1c) eines zweiten Leitfähigkeitstyps ist mittels einer zweiten elektrischen Anschlussschicht (5), die an der Rückseite (1e) angeordnet ist, elektrisch angeschlossen. Weiter ist ein Verfahren zur Herstellung eines derartigen Halbleiterchips (10) angegeben.
PCT/EP2011/066687 2010-09-28 2011-09-26 Optoelektronischer halbleiterchip und verfahren zu dessen herstellung Ceased WO2012052257A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/825,842 US8823034B2 (en) 2010-09-28 2011-09-26 Optoelectric semiconductor chip
US14/447,679 US9136431B2 (en) 2010-09-28 2014-07-31 Optoelectronic semiconductor chip
US14/818,630 US9293652B2 (en) 2010-09-28 2015-08-05 Optoelectronic semiconductor chip having reduced strain between different constituent materials of the chip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010046792.8 2010-09-28
DE102010046792A DE102010046792A1 (de) 2010-09-28 2010-09-28 Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/825,842 A-371-Of-International US8823034B2 (en) 2010-09-28 2011-09-26 Optoelectric semiconductor chip
US14/447,679 Division US9136431B2 (en) 2010-09-28 2014-07-31 Optoelectronic semiconductor chip

Publications (2)

Publication Number Publication Date
WO2012052257A2 WO2012052257A2 (de) 2012-04-26
WO2012052257A3 true WO2012052257A3 (de) 2012-11-15

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PCT/EP2011/066687 Ceased WO2012052257A2 (de) 2010-09-28 2011-09-26 Optoelektronischer halbleiterchip und verfahren zu dessen herstellung

Country Status (4)

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US (3) US8823034B2 (de)
DE (1) DE102010046792A1 (de)
TW (1) TWI452731B (de)
WO (1) WO2012052257A2 (de)

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DE102010046792A1 (de) * 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102011015821B4 (de) * 2011-04-01 2023-04-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
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KR101974353B1 (ko) * 2013-01-11 2019-05-02 삼성전자주식회사 발광소자 및 발광소자 패키지
DE102013200509A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR20140100115A (ko) * 2013-02-05 2014-08-14 삼성전자주식회사 반도체 발광 소자
DE102016113274B4 (de) 2016-07-19 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
JP2019537255A (ja) * 2016-11-22 2019-12-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 少なくとも１つのオプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品
DE102017113549A1 (de) * 2017-06-20 2018-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102018122684A1 (de) * 2018-09-17 2020-03-19 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
DE102019100624A1 (de) 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit erster und zweiter dielektrischer schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
US20220140192A1 (en) * 2020-11-04 2022-05-05 Excellence Opto. Inc. Light-emitting diode chip structure
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KR20220170236A (ko) 2021-06-22 2022-12-29 삼성전자주식회사 나노 막대 발광 소자, 복수의 나노 막대 발광 소자를 포함하는 기판 구조물, 및 기판 구조물의 제조 방법
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DE102022129759A1 (de) * 2022-11-10 2024-05-16 Ams-Osram International Gmbh Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

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Also Published As

Publication number Publication date
US9136431B2 (en) 2015-09-15
US8823034B2 (en) 2014-09-02
US9293652B2 (en) 2016-03-22
TW201222874A (en) 2012-06-01
US20130221369A1 (en) 2013-08-29
WO2012052257A2 (de) 2012-04-26
US20150340561A1 (en) 2015-11-26
DE102010046792A1 (de) 2012-03-29
TWI452731B (zh) 2014-09-11
US20140339591A1 (en) 2014-11-20

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