WO2012102533A3 - 태양전지 및 그의 제조방법 - Google Patents

태양전지 및 그의 제조방법 Download PDF

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Publication number
WO2012102533A3
WO2012102533A3 PCT/KR2012/000550 KR2012000550W WO2012102533A3 WO 2012102533 A3 WO2012102533 A3 WO 2012102533A3 KR 2012000550 W KR2012000550 W KR 2012000550W WO 2012102533 A3 WO2012102533 A3 WO 2012102533A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
board
manufacturing same
electrode layer
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/000550
Other languages
English (en)
French (fr)
Other versions
WO2012102533A2 (ko
Inventor
배도원
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to EP12739255.3A priority Critical patent/EP2669957A4/en
Priority to CN201280012896.4A priority patent/CN103430322B/zh
Priority to JP2013551896A priority patent/JP2014504038A/ja
Publication of WO2012102533A2 publication Critical patent/WO2012102533A2/ko
Publication of WO2012102533A3 publication Critical patent/WO2012102533A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3224—Materials thereof being Group IIB-VIA semiconductors
    • H10P14/3226—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

본 발명에 따른 태양전지는 기판과, 상기 기판 상에 형성된 이면 전극층, 광 흡수층, 투명 전극층과, 상기 기판과 이면 전극층 사이에 형성되어 2족 원소를 포함하는 베리어 층을 포함한다. 상기와 같은 발명은 기판 상에 금속 확산 방지를 위한 베리어 층을 형성함으로써, 기판에 함유된 금속 성분에 의해 태양전지의 효율이 떨어지는 것을 방지할 수 있는 효과가 있다.
PCT/KR2012/000550 2011-01-24 2012-01-20 태양전지 및 그의 제조방법 Ceased WO2012102533A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP12739255.3A EP2669957A4 (en) 2011-01-24 2012-01-20 Solar cell and method of manufacturing same
CN201280012896.4A CN103430322B (zh) 2011-01-24 2012-01-20 太阳能电池及其制造方法
JP2013551896A JP2014504038A (ja) 2011-01-24 2012-01-20 太陽電池及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0006994 2011-01-24
KR1020110006994A KR20120085577A (ko) 2011-01-24 2011-01-24 태양전지 및 그의 제조방법

Publications (2)

Publication Number Publication Date
WO2012102533A2 WO2012102533A2 (ko) 2012-08-02
WO2012102533A3 true WO2012102533A3 (ko) 2012-11-29

Family

ID=46581272

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000550 Ceased WO2012102533A2 (ko) 2011-01-24 2012-01-20 태양전지 및 그의 제조방법

Country Status (5)

Country Link
EP (1) EP2669957A4 (ko)
JP (1) JP2014504038A (ko)
KR (1) KR20120085577A (ko)
CN (1) CN103430322B (ko)
WO (1) WO2012102533A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101436539B1 (ko) * 2012-11-06 2014-09-02 엘에스엠트론 주식회사 박막형 태양전지 및 그 제조방법
KR101709999B1 (ko) * 2015-10-30 2017-02-24 한국생산기술연구원 ZnO 확산 방지층을 갖는 태양 전지 및 그 제조 방법
WO2019245433A1 (en) * 2018-06-19 2019-12-26 Solibro Research Ab Cigs solar cell with barrier layer and method of producing such

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080052596A (ko) * 2005-08-16 2008-06-11 나노솔라, 인크. 도전 장벽층과 호일 기판을 구비한 광전 소자
KR20090044027A (ko) * 2007-10-31 2009-05-07 주식회사 엘지화학 Ｃｉ(ｇ)ｓ 태양전지 후면 전극의 제조방법
KR20100094988A (ko) * 2007-12-07 2010-08-27 쌩-고벵 글래스 프랑스 광을 수집할 수 있는 요소의 개선

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006140414A (ja) * 2004-11-15 2006-06-01 Matsushita Electric Ind Co Ltd 太陽電池用基板及びこれを用いた太陽電池
CN101093863A (zh) * 2007-06-12 2007-12-26 南开大学 ZnO为电绝缘与杂质阻挡层的薄膜太阳电池及其制备方法
JP4629151B2 (ja) * 2009-03-10 2011-02-09 富士フイルム株式会社 光電変換素子及び太陽電池、光電変換素子の製造方法
DE102009013904A1 (de) * 2009-03-19 2010-09-23 Clariant International Limited Solarzellen mit einer Verkapselungsschicht auf Basis von Polysilazan

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080052596A (ko) * 2005-08-16 2008-06-11 나노솔라, 인크. 도전 장벽층과 호일 기판을 구비한 광전 소자
KR20090044027A (ko) * 2007-10-31 2009-05-07 주식회사 엘지화학 Ｃｉ(ｇ)ｓ 태양전지 후면 전극의 제조방법
KR20100094988A (ko) * 2007-12-07 2010-08-27 쌩-고벵 글래스 프랑스 광을 수집할 수 있는 요소의 개선

Also Published As

Publication number Publication date
JP2014504038A (ja) 2014-02-13
KR20120085577A (ko) 2012-08-01
CN103430322A (zh) 2013-12-04
EP2669957A4 (en) 2018-01-24
CN103430322B (zh) 2016-08-03
EP2669957A2 (en) 2013-12-04
WO2012102533A2 (ko) 2012-08-02

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