WO2012103868A3 - Verfahren und vorrichtung zur elektrischen kontaktierung von anschlussflächen zweier substrate durch laserlöten mit anwendung eines gasförmigen flussmittelmediums - Google Patents

Verfahren und vorrichtung zur elektrischen kontaktierung von anschlussflächen zweier substrate durch laserlöten mit anwendung eines gasförmigen flussmittelmediums Download PDF

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Publication number
WO2012103868A3
WO2012103868A3 PCT/DE2012/000068 DE2012000068W WO2012103868A3 WO 2012103868 A3 WO2012103868 A3 WO 2012103868A3 DE 2012000068 W DE2012000068 W DE 2012000068W WO 2012103868 A3 WO2012103868 A3 WO 2012103868A3
Authority
WO
WIPO (PCT)
Prior art keywords
connection areas
chip
phase
substrate
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2012/000068
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English (en)
French (fr)
Other versions
WO2012103868A8 (de
WO2012103868A2 (de
Inventor
Ghassem Azdasht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pac Tech Packaging Technologies GmbH
Original Assignee
Pac Tech Packaging Technologies GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pac Tech Packaging Technologies GmbH filed Critical Pac Tech Packaging Technologies GmbH
Priority to KR1020137022826A priority Critical patent/KR20140014156A/ko
Priority to US13/982,837 priority patent/US9649711B2/en
Priority to JP2013552102A priority patent/JP2014506012A/ja
Priority to EP12714202.4A priority patent/EP2671251A2/de
Priority to CN201280007342.5A priority patent/CN103477424B/zh
Publication of WO2012103868A2 publication Critical patent/WO2012103868A2/de
Publication of WO2012103868A3 publication Critical patent/WO2012103868A3/de
Publication of WO2012103868A8 publication Critical patent/WO2012103868A8/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings or fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, electron beams [EB]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01271—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/016—Manufacture or treatment of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07118—Means for cleaning, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07125—Means for controlling the bonding environment, e.g. valves or vacuum pumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07235—Applying EM radiation, e.g. induction heating or using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Laser Beam Processing (AREA)

Abstract

Die vorliegende Erfindung betrifft ein Verfahren zur elektrischen Kontaktierung von Anschlussflächen zweier Substrate (6, 7), insbesondere eines Chips (6) und eines Trägersubstrats (7), zweier Wafer oder einer Mehrzahl von übereinander angeordneten Chips und eines Substrats. Das erfindungsgemäße Verfahren erfolgt in zwei aufeinanderfolgenden Phasen, wobei in einer ersten Phase der Chip (6) mit seinen Anschlussflächen gegen Anschlussflächen des Substrats (7) positioniert wird und eine rückwärtige Beaufschlagung des Chips (6) mit Laserenergie (5) erfolgt und in einer nachfolgenden zweiten Phase in einem Gehäuse (3) eine Beaufschlagung mit einem Flussmittelmedium (beispielsweise einem Stickstoff-Ameisensäure-Gemisch) und gleichzeitig ein Reflow durch eine rückwärtige Beaufschlagung des Chips (6) mit Laserenergie (5) sowie anschließend ein Spülvorgang des Gehäuseinnenraums ausgeführt wird. Weiterhin betrifft die Erfindung eine Vorrichtung zur Ausführung der zweiten Phase des erfindungsgemäßen Verfahrens. Die erfindungsgemäße Vorrichtung zur Ausführung der zweiten Phase des Verfahrens umfasst einen Trägertisch (1) und ein Gehäuse (3), das zusammen mit einer Oberseite des Trägertisches (1) einen Gehäuseinnenraum ausbildet, in dem die Bauelementeanordnung positioniert ist sowie eine Laserlichtquelle (5), die derart ausgerichtet ist, dass die Laserstrahlung rückseitig auf das erste Substrat (6) trifft.
PCT/DE2012/000068 2011-02-02 2012-01-30 Verfahren und vorrichtung zur elektrischen kontaktierung von anschlussflächen zweier substrate Ceased WO2012103868A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020137022826A KR20140014156A (ko) 2011-02-02 2012-01-30 기체상의 플럭스 매체를 이용한 레이저 납땜에 의한 두 기판의 접속 영역의 전기적인 본딩 방법 및 장치
US13/982,837 US9649711B2 (en) 2011-02-02 2012-01-30 Method and device for electrically contacting terminal faces of two substrates by laser soldering using a gaseous flux medium
JP2013552102A JP2014506012A (ja) 2011-02-02 2012-01-30 ガスフラックス媒体を用いるレーザ半田付けにより２つの基板の端子面を電気的に接触させるための方法および装置
EP12714202.4A EP2671251A2 (de) 2011-02-02 2012-01-30 Verfahren und vorrichtung zur elektrischen kontaktierung von anschlussflächen zweier substrate
CN201280007342.5A CN103477424B (zh) 2011-02-02 2012-01-30 用于通过利用气态熔剂介质激光焊接对两个衬底的连接面进行电接触的方法和设备

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011010161 2011-02-02
DE102011010161.8 2011-02-02
DE102011010161.6 2011-02-02

Publications (3)

Publication Number Publication Date
WO2012103868A2 WO2012103868A2 (de) 2012-08-09
WO2012103868A3 true WO2012103868A3 (de) 2012-09-27
WO2012103868A8 WO2012103868A8 (de) 2012-11-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2012/000068 Ceased WO2012103868A2 (de) 2011-02-02 2012-01-30 Verfahren und vorrichtung zur elektrischen kontaktierung von anschlussflächen zweier substrate

Country Status (6)

Country Link
US (1) US9649711B2 (de)
EP (1) EP2671251A2 (de)
JP (1) JP2014506012A (de)
KR (1) KR20140014156A (de)
CN (1) CN103477424B (de)
WO (1) WO2012103868A2 (de)

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CN104842069A (zh) * 2014-02-13 2015-08-19 泰科电子(上海)有限公司 激光焊接系统
WO2017025744A1 (en) * 2015-08-13 2017-02-16 Bae Systems Plc Apparatus and method for communications management
WO2017051221A1 (en) * 2015-09-25 2017-03-30 Telefonaktiebolaget Lm Ericsson (Publ) Interference management for multiuser in-coverage device to device communication
FR3061801A1 (fr) * 2017-01-12 2018-07-13 Commissariat Energie Atomique Procede de connexion electrique entre au moins deux elements
KR102052904B1 (ko) 2018-03-27 2019-12-06 순천향대학교 산학협력단 인지 기능 검사가 가능한 주사위 게임 장치
DE102018114013A1 (de) * 2018-06-12 2019-12-12 Osram Opto Semiconductors Gmbh Verfahren zum fixieren eines halbleiterchips auf einer oberfläche, verfahren zur herstellung eines halbleiterbauelements und halbleiterbauelement
KR102208069B1 (ko) * 2019-01-29 2021-01-27 주식회사 프로텍 질소 분위기 레이저 본딩 장치
US11651973B2 (en) 2020-05-08 2023-05-16 International Business Machines Corporation Method and apparatus of processor wafer bonding for wafer-scale integrated supercomputer
KR20230157553A (ko) * 2022-05-09 2023-11-17 삼성디스플레이 주식회사 레이저 가압 헤드 모듈 및 이를 포함하는 레이저 본딩 장치

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Also Published As

Publication number Publication date
WO2012103868A8 (de) 2012-11-15
KR20140014156A (ko) 2014-02-05
US20140027418A1 (en) 2014-01-30
WO2012103868A2 (de) 2012-08-09
JP2014506012A (ja) 2014-03-06
CN103477424B (zh) 2016-12-14
US9649711B2 (en) 2017-05-16
EP2671251A2 (de) 2013-12-11
CN103477424A (zh) 2013-12-25

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