WO2012104535A3 - Structure adaptee a la formation de cellules solaires - Google Patents

Structure adaptee a la formation de cellules solaires Download PDF

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Publication number
WO2012104535A3
WO2012104535A3 PCT/FR2012/050195 FR2012050195W WO2012104535A3 WO 2012104535 A3 WO2012104535 A3 WO 2012104535A3 FR 2012050195 W FR2012050195 W FR 2012050195W WO 2012104535 A3 WO2012104535 A3 WO 2012104535A3
Authority
WO
WIPO (PCT)
Prior art keywords
crystal grains
solar cells
average size
size greater
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2012/050195
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English (en)
Other versions
WO2012104535A2 (fr
Inventor
Guy Chichignoud
Elisabeth Blanquet
Isabelle GELARD
Carmen Jimenez
Eirini SARIGIANNIDOU
Kader ZAIDAT
François WEISS
Michel Pons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique
Grenoble Institute of Technology
Original Assignee
Centre National de la Recherche Scientifique
Grenoble Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique, Grenoble Institute of Technology filed Critical Centre National de la Recherche Scientifique
Priority to EP12706653.8A priority Critical patent/EP2671260A2/fr
Priority to US13/982,323 priority patent/US20150162470A1/en
Publication of WO2012104535A2 publication Critical patent/WO2012104535A2/fr
Publication of WO2012104535A3 publication Critical patent/WO2012104535A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)

Abstract

L'invention concerneune structure adaptée à la forma- tion de cellules solaires comprenant successivement une feuille (1) d'un métal texturé à grains cristallins d'une dimension moyenne supérieure à 50 µm, adaptée à former une électrode de face arrière desdites cellules;une couche barrière (2) de diffusion d'une épaisseur de 0,2 à 2 µm en un matériau électri- quement conducteur, présentant des grains cristallins d'une dimension moyenne supérieure à 50 µm; etune couche de silicium multi-cristallin dopé (3) d'une épaisseur de 30 à 100 µm présentant des grains cristallins d'une dimension moyenne supérieure à 50 à 100 µm, dans laquelle la longueur de diffusion des porteurs a une valeur moyenne supérieure à 50 µm.
PCT/FR2012/050195 2011-01-31 2012-01-30 Structure adaptee a la formation de cellules solaires Ceased WO2012104535A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP12706653.8A EP2671260A2 (fr) 2011-01-31 2012-01-30 Structure adaptee a la formation de cellules solaires
US13/982,323 US20150162470A1 (en) 2011-01-31 2012-01-30 Structure for forming solar cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1150718 2011-01-31
FR1150718A FR2971086B1 (fr) 2011-01-31 2011-01-31 Structure adaptee a la formation de cellules solaires

Publications (2)

Publication Number Publication Date
WO2012104535A2 WO2012104535A2 (fr) 2012-08-09
WO2012104535A3 true WO2012104535A3 (fr) 2013-03-28

Family

ID=44509975

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2012/050195 Ceased WO2012104535A2 (fr) 2011-01-31 2012-01-30 Structure adaptee a la formation de cellules solaires

Country Status (4)

Country Link
US (1) US20150162470A1 (fr)
EP (1) EP2671260A2 (fr)
FR (1) FR2971086B1 (fr)
WO (1) WO2012104535A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200161483A1 (en) * 2017-06-23 2020-05-21 King Abdullah University Of Science And Technology Hole blocking layers for electronic devices and method of producing an electronic device having a hole-blocking layer

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1067610A (fr) * 1975-05-12 1979-12-04 Ting L. Chu Substrats a bon marche pour piles solaires polycristallines
US4511756A (en) * 1982-11-19 1985-04-16 Siemens Aktiengesellschaft Amorphous silicon solar cells and a method of producing the same
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
EP0341017A2 (fr) * 1988-05-04 1989-11-08 Astrosystems, Inc. Cellule solaire à couche de silicium déposée
EP0656664A1 (fr) * 1993-11-30 1995-06-07 Canon Kabushiki Kaisha Transducteur photoélectrique en siliciumpolycristallin et son procédé de fabrication
US5441577A (en) * 1991-03-07 1995-08-15 Mitsubishi Denki Kabushiki Kaisha Thin film solar cell and production method therefor
EP2031082A1 (fr) * 2007-08-31 2009-03-04 ArcelorMittal - Stainless & Nickel Alloys Substrat métallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procédé de dépot de couches minces
US20100154874A1 (en) * 2008-09-29 2010-06-24 Takashi Hirose Photoelectric conversion device and manufacturing method thereof
JP2010183070A (ja) * 2009-01-07 2010-08-19 Kagoshima Univ 光発電装置及びその製造方法
US20100275989A1 (en) * 2009-05-02 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US7906229B2 (en) * 2007-03-08 2011-03-15 Amit Goyal Semiconductor-based, large-area, flexible, electronic devices
US8987736B2 (en) * 2000-07-10 2015-03-24 Amit Goyal [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
US20060208257A1 (en) 2005-03-15 2006-09-21 Branz Howard M Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates
JP2010018307A (ja) 2008-07-10 2010-01-28 Power Supply Kk 気密状態持続容器
WO2010088366A1 (fr) * 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Structures de film mince cristallin à gros grains, et dispositifs et procédés de formation de telles structures
US20120192937A1 (en) * 2011-01-28 2012-08-02 Mariappan Parans Paranthaman Thin film structure for photovoltaic applications

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1067610A (fr) * 1975-05-12 1979-12-04 Ting L. Chu Substrats a bon marche pour piles solaires polycristallines
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4511756A (en) * 1982-11-19 1985-04-16 Siemens Aktiengesellschaft Amorphous silicon solar cells and a method of producing the same
EP0341017A2 (fr) * 1988-05-04 1989-11-08 Astrosystems, Inc. Cellule solaire à couche de silicium déposée
US5441577A (en) * 1991-03-07 1995-08-15 Mitsubishi Denki Kabushiki Kaisha Thin film solar cell and production method therefor
EP0656664A1 (fr) * 1993-11-30 1995-06-07 Canon Kabushiki Kaisha Transducteur photoélectrique en siliciumpolycristallin et son procédé de fabrication
EP2031082A1 (fr) * 2007-08-31 2009-03-04 ArcelorMittal - Stainless & Nickel Alloys Substrat métallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procédé de dépot de couches minces
US20100154874A1 (en) * 2008-09-29 2010-06-24 Takashi Hirose Photoelectric conversion device and manufacturing method thereof
JP2010183070A (ja) * 2009-01-07 2010-08-19 Kagoshima Univ 光発電装置及びその製造方法
US20100275989A1 (en) * 2009-05-02 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
US20150162470A1 (en) 2015-06-11
EP2671260A2 (fr) 2013-12-11
WO2012104535A2 (fr) 2012-08-09
FR2971086A1 (fr) 2012-08-03
FR2971086B1 (fr) 2014-04-18

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