WO2012108618A3 - Appareil de croissance d'un monocristal faisant appel à des micro-ondes et procédé de croissance associé - Google Patents

Appareil de croissance d'un monocristal faisant appel à des micro-ondes et procédé de croissance associé Download PDF

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Publication number
WO2012108618A3
WO2012108618A3 PCT/KR2011/009507 KR2011009507W WO2012108618A3 WO 2012108618 A3 WO2012108618 A3 WO 2012108618A3 KR 2011009507 W KR2011009507 W KR 2011009507W WO 2012108618 A3 WO2012108618 A3 WO 2012108618A3
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
microwaves
single crystal
heating unit
growth furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/009507
Other languages
English (en)
Korean (ko)
Other versions
WO2012108618A2 (fr
Inventor
김병관
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UNID CO Ltd
Original Assignee
UNID CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UNID CO Ltd filed Critical UNID CO Ltd
Publication of WO2012108618A2 publication Critical patent/WO2012108618A2/fr
Publication of WO2012108618A3 publication Critical patent/WO2012108618A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un appareil de croissance d'un monocristal qui, dans un mode de réalisation, comprend : un four de croissance constitué d'un feutre isolant disposé à l'intérieur; un creuset qui se trouve à l'intérieur du feutre isolant et qui contient des matières premières pour les monocristaux, des germes cristallins étant placés dans le creuset; une unité chauffante principale qui est conçue du côté externe du creuset et qui fournit de la chaleur au creuset; une unité chauffante auxiliaire qui est située dans le four de croissance et qui chauffe l'unité chauffante et les matières premières pour les monocristaux au sein du creuset au moyen de micro-ondes; une unité d'échange de chaleur qui est conçue au niveau de la partie inférieure du creuset et qui réalise un échange de chaleur avec le creuset; et une unité de refroidissement qui inclut une chambre de refroidissement disposée sur la paroi externe du four de croissance et qui fournit des fluides frigorigènes à la chambre de refroidissement.
PCT/KR2011/009507 2011-02-09 2011-12-09 Appareil de croissance d'un monocristal faisant appel à des micro-ondes et procédé de croissance associé Ceased WO2012108618A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110011423A KR101299037B1 (ko) 2011-02-09 2011-02-09 마이크로 웨이브를 이용한 단결정 성장장치 및 그 성장방법
KR10-2011-0011423 2011-02-09

Publications (2)

Publication Number Publication Date
WO2012108618A2 WO2012108618A2 (fr) 2012-08-16
WO2012108618A3 true WO2012108618A3 (fr) 2012-10-04

Family

ID=46639014

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/009507 Ceased WO2012108618A2 (fr) 2011-02-09 2011-12-09 Appareil de croissance d'un monocristal faisant appel à des micro-ondes et procédé de croissance associé

Country Status (2)

Country Link
KR (1) KR101299037B1 (fr)
WO (1) WO2012108618A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101464561B1 (ko) * 2013-01-17 2014-12-01 주식회사 엘지실트론 사파이어 잉곳 성장장치 및 이에 이용되는 로드 히터
KR101654423B1 (ko) * 2014-10-13 2016-09-07 한국생산기술연구원 분리형 씨드 투입 방법
CN105648530A (zh) * 2016-04-19 2016-06-08 黄山市东晶光电科技有限公司 一种可在线更换籽晶的泡生法蓝宝石晶体生长炉
CN105862121A (zh) * 2016-04-19 2016-08-17 黄山市东晶光电科技有限公司 一种可在线更换籽晶的方法
KR102129871B1 (ko) * 2018-07-16 2020-07-03 엔티씨 주식회사 연속식 진공 용해로
CN110760929B (zh) * 2019-12-02 2024-08-16 大连威凯特科技有限公司 直拉式单晶硅棒的生产设备
CN120060685B (zh) * 2025-04-27 2025-07-11 湖南维特精密机械有限公司 一种铜钨复合材料的制备方法及铜钨复合材料

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1053485A (ja) * 1996-08-07 1998-02-24 Sumitomo Sitix Corp 電子ビーム溶解による単結晶引き上げ方法
JPH11255593A (ja) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 原料溶解補助装置
KR20100042506A (ko) * 2008-10-16 2010-04-26 주식회사 엔씨비네트웍스 정제 기능을 가지는 실리콘 잉곳 제조장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4513798B2 (ja) * 2006-10-24 2010-07-28 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1053485A (ja) * 1996-08-07 1998-02-24 Sumitomo Sitix Corp 電子ビーム溶解による単結晶引き上げ方法
JPH11255593A (ja) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 原料溶解補助装置
KR20100042506A (ko) * 2008-10-16 2010-04-26 주식회사 엔씨비네트웍스 정제 기능을 가지는 실리콘 잉곳 제조장치

Also Published As

Publication number Publication date
WO2012108618A2 (fr) 2012-08-16
KR20120091576A (ko) 2012-08-20
KR101299037B1 (ko) 2013-08-27

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