WO2012117904A1 - Module d'objectif et dispositif de réalisation d'image - Google Patents

Module d'objectif et dispositif de réalisation d'image Download PDF

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Publication number
WO2012117904A1
WO2012117904A1 PCT/JP2012/054191 JP2012054191W WO2012117904A1 WO 2012117904 A1 WO2012117904 A1 WO 2012117904A1 JP 2012054191 W JP2012054191 W JP 2012054191W WO 2012117904 A1 WO2012117904 A1 WO 2012117904A1
Authority
WO
WIPO (PCT)
Prior art keywords
spacer
lens module
cut filter
infrared cut
wll
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/054191
Other languages
English (en)
Japanese (ja)
Inventor
一英 長谷川
米山　聡
理士 小池
亮 松野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of WO2012117904A1 publication Critical patent/WO2012117904A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G02B13/0015—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design
    • G02B13/002—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design having at least one aspherical surface
    • G02B13/003—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design having at least one aspherical surface having two lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G02B13/0055—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing a special optical element
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G02B13/0085—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing wafer level optics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/005—Diaphragms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/022—Mountings, adjusting means, or light-tight connections, for optical elements for lenses lens and mount having complementary engagement means, e.g. screw/thread
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

Definitions

  • the present invention relates to a lens module configured by stacking two lenses in the optical axis direction, and an imaging apparatus including the lens module.
  • An image pickup apparatus of a wafer level chip size package including a solid-state image pickup device chip on which an image pickup device is formed and a lens module that forms a subject image on the image pickup device is known from Patent Document 1 and the like. Since such an imaging device can be manufactured with a size of about several mm square, it is preferably used for small electronic devices such as mobile phones.
  • the lens module is composed of a plurality of lenses stacked in the optical axis direction. Further, in the lens module, a frame-shaped spacer is provided between the lenses, and a gap is formed between the lenses to adjust the optical characteristics of each lens (Patent Document). 2). Furthermore, in the lens module, in order to prevent black from being reddish due to the influence of infrared rays (so-called color cast), an infrared cut filter formed in a plate shape is provided on each lens in an overlapping manner.
  • the present invention has been made in view of the above problems, and an object thereof is to suppress an increase in the cost of a lens module even when an infrared cut filter is provided in the lens module.
  • a lens module of the present invention is formed in a plate shape with two first and second lenses stacked in the optical axis direction, and is provided so as to be sandwiched between the lenses.
  • the spacer includes: a spacer that adjusts the distance between the lenses according to the thickness; and an infrared cut filter that is formed in a thin film on one surface of the spacer and removes infrared rays contained in transmitted light.
  • the plate shape means a thin and flat shape as a whole including a substantially flat state.
  • the spacer is formed as a thin film on the other surface of the spacer and is made of a material having the same thermal expansion coefficient as that of the infrared cut filter, and the spacer and the infrared cut filter are distorted due to a difference in thermal expansion coefficient. It is more preferable to provide an anti-strain film that prevents this.
  • the same thermal expansion coefficient includes substantially the same thermal expansion coefficient in addition to that of the infrared cut filter and the distortion preventing film.
  • the distortion prevention film is an aperture that is made of a material having the same thermal expansion coefficient as that of the infrared cut filter and has a light shielding property, and an opening is formed, and light unnecessary for image formation is blocked by the opening. It is preferable.
  • the infrared cut filter and the distortion preventing film are formed so as to expose at least a part of a portion of each surface of the spacer that contacts each lens.
  • the infrared cut filter is preferably formed by a vapor deposition method
  • the distortion prevention film is preferably formed by a vapor deposition method or a printing method.
  • the image pickup apparatus of the present invention includes any one of the lens modules described above and an image pickup device that picks up a subject image formed by the lens module.
  • a spacer for adjusting the distance between the lenses is formed in a plate shape, and a thin-film infrared cut filter is formed on one surface of the spacer.
  • a substrate for the infrared cut filter or a spacer for supporting the same there is no increase in the number of parts and the manufacturing process. Therefore, when the infrared cut filter is provided in the lens module In addition, the cost increase of the lens module can be suppressed.
  • FIG. 6 is a perspective view for explaining the stacking of the first to second WLL arrays and the spacer array. It is a top view which shows the structure of a spacer array. It is explanatory drawing for demonstrating lamination
  • the lens module 10 includes a first wafer level lens (hereinafter abbreviated as WLL) 11, two lenses stacked in the optical axis direction of the second WLL 12, and a space between these lenses. It is comprised with the spacer 13 provided so that it might be pinched
  • the lens module 10 is manufactured at a wafer level and is formed in a rectangular parallelepiped outer shape of about several mm square.
  • the lens module 10 is used in an image pickup apparatus of a small electronic device such as a mobile phone, and is disposed so as to face the image pickup device and forms a subject image on the image pickup device.
  • a transparent and colorless material such as optical glass or optical plastic is used for each part of the WLLs 11 and 12 and the spacer 13. Moreover, it is preferable that the thermal expansion coefficients of the materials of the WLLs 11 and 12 and the spacer 13 are the same.
  • the first WLL 11 is formed in a concave meniscus lens shape having a concave portion 11a on a surface that is a subject side when used in an imaging apparatus and an aspherical convex portion 11b on the other surface.
  • the second WLL 12 is formed in a convex meniscus lens shape having a convex portion 12a on the surface on the subject side when used in the imaging apparatus and a concave portion 12b on the other surface.
  • the WLLs 11 and 12 are formed so that their optical centers substantially coincide with each other.
  • the spacer 13 is formed in a plate shape.
  • the spacer 13 adjusts the interval between the WLLs 11 and 12 according to the thickness thereof, so that when the lens module 10 is used in the imaging apparatus, the subject image is appropriately formed on the imaging surface of the imaging element by the WLLs 11 and 12. To be imaged.
  • An infrared cut filter 14 is provided on one surface of the spacer 13 to remove infrared rays contained in transmitted light by absorbing or reflecting infrared rays.
  • the infrared cut filter 14 is a thin film generated by a vapor deposition method. For example, a layer of a high refractive index material such as titanium dioxide or tantalum pentoxide and a layer of a low refractive index material such as silicon dioxide are alternately stacked. It is comprised by the optical multilayer film formed.
  • the other surface of the spacer 13 is provided with an aperture (distortion prevention film) 15 as a light shielding ring for shielding light unnecessary for image formation such as so-called stray light.
  • the aperture 15 is a thin film produced by a vapor deposition method.
  • a material having a light shielding property and the same thermal expansion coefficient as that of the infrared cut filter 14 is used.
  • the aperture 15 is provided with a substantially circular opening 15a.
  • the opening 15 a is arranged so that the center thereof substantially coincides with the optical center of each of the WLLs 11 and 12.
  • the aperture 15 shields light that does not need to be imaged on the image sensor by the diameter of the opening 15a.
  • the thickness of the infrared cut filter 14 and the aperture 15 is increased for convenience, but these thicknesses are actually about several ⁇ m.
  • the lens module 10 includes a first WLL array 20 having a plurality of first WLLs 11 arranged in a two-dimensional lattice, and a second WLL array 21 having a plurality of second WLLs 12 arranged in a two-dimensional lattice. And a spacer array 22 having a plurality of spacers 13 arranged in a two-dimensional lattice are bonded together and cut by a dicing line indicated by a two-dot chain line in the drawing (dicing).
  • Each array 20 to 22 is formed in a disk shape having substantially the same diameter.
  • a plurality of concave portions 11 a arranged in a two-dimensional lattice shape is provided on the surface of the first WLL array 20 .
  • the back surface of the first WLL array 20 is provided with a plurality of convex portions 11b (see FIG. 4) arranged in a two-dimensional lattice pattern.
  • the first WLL 11 is generated by dicing the first WLL array 20.
  • the surface of the second WLL array 21 is provided with a plurality of convex portions 12a arranged in a two-dimensional lattice pattern.
  • the back surface of the second WLL array 21 is provided with a plurality of recesses 12b (see FIG. 4) arranged in a two-dimensional lattice pattern.
  • the surface of the spacer array 22 is provided with an infrared cut filter 22a (a portion indicated by shading in the figure) formed over the entire surface.
  • the infrared cut filter 22 a has the same properties as the infrared cut filter 14.
  • the back surface of the spacer array 22 has a light shielding film 22b (a portion indicated by shading in the figure) formed over the entire surface and a plurality of two-dimensional grids.
  • An opening 15a is provided.
  • the light shielding film 22 b has the same properties as the light shielding portion of the aperture 15.
  • the infrared cut filter 22a is separated into the infrared cut filter 14, and the light shielding film 22b and each opening 15a are separated into the aperture 15 to form the spacer. 13 is generated.
  • the spacer array 22 is overlaid on the first WLL array 20 so as to face each other and are bonded to each other. Thereafter, the surface of the spacer array 22 on the side where the infrared cut filter 22 a is formed faces the surface of the second WLL array 21 on which the concave portions 12 b are formed, and the second WLL array 21 is placed on the spacer array 22. And glue them together.
  • the spacer array 22 having the plurality of spacers 13 is formed in a plate shape, and the thin-film infrared cut filter 22a is formed on one surface thereof. It is not necessary to separately provide a dedicated substrate for forming the infrared cut filter 14 or a spacer for supporting the substrate.
  • the spacer 13 has the function of adjusting the interval between the WLLs 11 and 12 and the function of preventing the transmission of infrared rays, even when the lens module 10 is provided with the infrared cut filter 14, The increase in the cost of the lens module 10 can be suppressed without increasing the number of parts and the manufacturing process.
  • a thin light-shielding film 22b and each opening 15a are formed on the other surface of the spacer array 22, so that the spacer 13 further has a function of a light-shielding ring that shields light unnecessary for image formation. Therefore, there is no need to separately provide a dedicated substrate for forming the aperture 15 or a spacer for supporting the same, and the effect of suppressing the cost increase of the lens module 10 can be further enhanced.
  • the stacked bodies of the arrays 20 to 22 are formed along the dicing lines DL set between the adjacent convex portions 11b. Dicing. Thereby, the laminated body is separated into pieces, and the lens module 10 including the first WLL 11, the spacer 13, and the second WLL 12 is manufactured.
  • the imaging device 30 includes a lens module 10, a solid-state imaging device chip 31 provided with an imaging device 31 a that captures a subject image formed by the lens module 10, and a case 32 that stores these. And a diaphragm 33 that adjusts the amount of light incident on the image sensor 31a.
  • the imaging device 30 is a small camera module manufactured in a so-called wafer level chip size package, and is used in a small electronic device such as a mobile phone.
  • the imaging device 30 is formed in a substantially rectangular parallelepiped shape.
  • the case 32 is formed in a hollow shape having a substantially rectangular cross section, and the lens module 10 and the solid-state imaging element chip 31 are accommodated in the space inside the case 32.
  • a metal material such as aluminum or a resin material such as plastic is used.
  • the diaphragm 33 is formed in a rectangular plate shape that is substantially the same as the shape of the end portion of the case 32, and is attached to the case 32 so as to close the end portion on the lens module 10 side.
  • the diaphragm 33 is made of a resin material or a metal material having a light shielding property.
  • a substantially circular opening 33 a is formed in the center of the diaphragm 33 to expose the convex portion 12 a of the second WLL 12. The diaphragm 33 adjusts the amount of light incident on the image sensor 31a through the opening 33a.
  • the solid-state image sensor chip 31 includes, in addition to the image sensor 31a, a plurality of electrodes for obtaining an electrical connection with an external circuit board, various circuits for driving the image sensor 31a, etc. The illustration is omitted).
  • the image pickup device 31a is a known image sensor such as a CCD image sensor or a CMOS image sensor, picks up a subject image formed by the lens module 10, and outputs an image pickup signal corresponding to the subject image.
  • a spacer 34 is provided on the solid-state image sensor chip 31.
  • the spacer 34 is formed in a substantially rectangular frame shape surrounding the imaging element 31a.
  • the spacer 34 supports the lens module 10 at the end opposite to the side attached to the solid-state image sensor chip 31, thereby forming a gap having a predetermined interval between the lens module 10 and the image sensor 31a. .
  • a spacer 34 is laminated on the solid-state imaging device chip 31 and bonded.
  • the lens module 10 is laminated on the spacer 34 and bonded.
  • the spacer 34 and the lens module 10 are sequentially stacked and bonded onto the solid-state imaging device chip 31, the stacked body is stored in the case 32. Thereafter, the diaphragm 33 is attached to the end of the case 32 on the lens module 10 side. Thereby, the imaging device 30 is manufactured.
  • the solid-state imaging device chip 31 is provided by performing a reflow process with the imaging device 30 placed on a circuit board of the electronic device.
  • the electrode and the electrode provided on the circuit board of the electronic device are joined with cream solder.
  • the imaging device 30 and the circuit board are exposed to a high temperature of about 250 degrees.
  • the spacer 13 and the infrared cut filter 14 are different due to the difference in thermal expansion coefficient between the surface on which the infrared cut filter 14 is provided and the surface on which the infrared cut filter 14 is not provided. Distortion occurs and causes image quality degradation of the imaging device 30.
  • the infrared cut filter 14 when the infrared cut filter 14 is disposed immediately in front of the image sensor 31a, the light beam condensed at one point passes through the infrared cut filter 14, and thus corresponds to a distorted portion of the infrared cut filter 14.
  • the influence of the distortion of the infrared cut filter 14 only affects the pixels to be processed.
  • the infrared cut filter 14 when the infrared cut filter 14 is disposed near the center of the lens module 10 as in the present embodiment, the light beam passing through the infrared cut filter 14 is wide, and the distorted portion of the infrared cut filter 14 is Since the transmitted light is incident on a wide range of the imaging surface, the image quality is deteriorated due to the distortion over the entire screen depending on the degree of distortion of the infrared cut filter 14.
  • the influence of the distortion of the spacer 13 and the infrared cut filter 14 is relatively large. Therefore, it is necessary to appropriately prevent such distortion from occurring. .
  • the aperture 15 having the same thermal expansion coefficient as the infrared cut filter 14 is provided on the other surface of the spacer 13 so that the thermal expansion coefficients of both surfaces of the spacer 13 are uniform.
  • the imaging device 30 is exposed to a high temperature, such as when a reflow process is performed, distortion of the spacer 13 and the infrared cut filter 14 due to a difference in thermal expansion coefficient, and deterioration of the image quality of the imaging device 30 accompanying this. Can be prevented.
  • the aperture 15 is generated by the vapor deposition method, but the aperture 15 may be generated by a printing method such as an inkjet or a screen without being limited thereto.
  • the infrared cut film 14 was produced
  • An infrared cut film 14 may be generated.
  • the thermal expansion coefficient of the spacer 13 made of optical glass or optical plastic is close to the thermal expansion coefficient of the infrared cut film 14, and the lens module 10 is exposed to a high temperature. At the same time, the occurrence of distortion of the spacer 13 and the infrared cut film 14 can be suppressed.
  • the infrared cut film 14 When the infrared cut film 14 is generated by a metal thin film and the aperture 15 is generated by a printing method, a special ink must be used for printing the aperture 15 in order to make the thermal expansion coefficients of the infrared cut film 14 and the aperture 15 the same. There is a concern that the cost of the lens module 10 may increase. On the other hand, when the infrared cut film 14 is produced with a dielectric multilayer film, it is difficult to make the thermal expansion coefficient the same as that of the infrared cut film 14 in the metal thin film aperture 15 by the vapor deposition method.
  • the aperture 15 is generated by the vapor deposition method, and when the infrared cut film 14 is generated by the dielectric multilayer film, the aperture 15 is generated by the printing method. Is preferred. In this way, the infrared cut film 14 and the aperture 15 having the same thermal expansion coefficient can be generated at a relatively low cost.
  • the imaging device 30 is manufactured by stacking the diced lens module 10 and the solid-state imaging device chip 31, but the manufacturing method of the imaging device 30 is not limited to this.
  • the manufacturing method of the imaging device 30 is not limited to this.
  • FIG. 7 first, a substantially lattice having through holes 37a facing each of the image pickup devices 31a on a silicon wafer 36 on which a plurality of solid-state image pickup device chips 31 are formed in a two-dimensional lattice form.
  • a spacer substrate 37 is laminated and bonded.
  • the first WLL array 20, the spacer array 22, and the second WLL array 21 are sequentially stacked and bonded on the spacer substrate 37 in this order.
  • the stacked body of these substrates is diced along dicing lines DL set between the solid-state imaging device chips 31 as shown in FIG. Thereby, the stacked body is separated into individual pieces, and an imaging module including the solid-state imaging element chip 31, the spacer 34, the first WLL 11, the spacer 13, and the second WLL 12 is generated. And this imaging module is accommodated in the case 32, and the imaging device 30 is manufactured by attaching the diaphragm 33 to the end of the case 32 on the lens module 10 side.
  • the imaging device 30 may be manufactured by first stacking the arrays 20 to 22 and the silicon wafer 36 and dicing them. In this case, it is preferable that the diameters of the arrays 20 to 22 and the diameter of the silicon wafer 36 are substantially the same so that alignment and dicing can be easily performed. Furthermore, the lens module 10 is generated by dicing the stacked body of the arrays 20 to 22, and then the lens module 10 is attached to the silicon wafer 36, and the silicon wafer 36 is diced to manufacture the imaging device 30. May be.
  • the infrared cut filter 14 is formed on the entire surface of one surface of the spacer 13 and the aperture 15 is formed on the entire surface of the other surface.
  • the infrared cut filter 14 and the aperture 15 are formed on the entire surface of the spacer 13 in this way. If an adhesive is applied on these surfaces to adhere to each of the WLLs 11 and 12, the adhesive strength of the adhesive is reduced, and the adhesion between the WLLs 11 and 12 and the spacer 13 is easily peeled off. End up.
  • an infrared cut filter 41 and an aperture 42 that are slightly smaller than the outer shape of the spacer 40 may be formed as in the spacer 40 shown in FIG.
  • the infrared cut filter 41 may have the same function as the infrared cut filter 14 of the above embodiment.
  • the aperture 42 may include an opening 42a and have the same function as the aperture 15 of the above embodiment.
  • the infrared cut filter 41 and the aperture 42 are formed, and the vicinity of the outer periphery of each surface of the spacer 40 that is a portion in contact with each of the WLLs 11 and 12 is exposed. Then, as in the lens module 44 shown in FIG. 10, an adhesive 46 is applied to a portion where the surface of the spacer 40 is exposed, and the spacer 40 and each of the WLLs 11 and 12 are connected without using the infrared cut filter 41 or the aperture 42. Glue. By so doing, it is possible to reliably prevent a decrease in adhesive strength due to the infrared cut filter 41 and the aperture 42.
  • the spacer array 48 shown in FIG. 11 may be configured.
  • the spacer array 48 is formed in a disk shape like the spacer array 22 of the above embodiment.
  • the surface of the spacer array 48 is provided with a plurality of infrared cut filters 41 arranged in a two-dimensional lattice pattern.
  • a plurality of apertures 42 arranged in a two-dimensional lattice pattern are provided on the back surface of the spacer array 48.
  • Each infrared cut filter 41, each aperture 42, and each opening 42 a is provided in the first WLL array 20 when the first WLL array 20, the second WLL array 21, and the spacer array 48 are overlapped.
  • the optical centers of the concave portions 11a and the convex portions 11b and the optical centers of the convex portions 12a and the concave portions 12b provided in the second WLL array 21 are arranged so as to substantially coincide with each other.
  • the spacer array 48 is configured in this way, and the spacer 40 may be generated by dicing the spacer array 48.
  • the shape of the infrared cut filter 41 and the aperture 42 is not limited to a circular shape, and may be any shape as long as the portions in contact with the WLLs 11 and 12 of each surface of the spacer 40 can be exposed.
  • the aperture 15 is provided only on the surface of the spacer 13 on the image sensor 31a side.
  • the thermal expansion coefficient of both surfaces of the spacer 13 can be made the same, the aperture is provided on both surfaces of the spacer 13. May be.
  • the diameters of the openings of the apertures on both sides may be the same or different.
  • the infrared cut filter 14 is provided on the subject side surface of the spacer 13 and the aperture 15 is provided on the image sensor 31a side surface of the spacer 13. However, these positions may be reversed.
  • the aperture 15 is shown as the distortion preventing film, but the distortion preventing film is not limited to this.
  • an infrared cut filter identical to the infrared cut filter 14 may be formed as a distortion preventing film.
  • the thermal expansion coefficients on both surfaces of the spacer 13 can be made more uniform, and image quality deterioration due to this can be prevented more appropriately.
  • the anti-distortion film has the same thermal expansion coefficient as that of the infrared cut filter 14, such as an anti-reflection film that prevents reflection of transmitted light and an ultraviolet cut filter that removes ultraviolet light contained in the transmitted light. Any thin film can be used.
  • the present invention is not limited thereto, and the imaging of the first WLL 11 is performed.
  • the present invention may be applied to a lens module composed of a larger number of lenses in which lenses are further stacked on the element 31a side or the subject side of the second WLL 12.
  • each of the arrays 20 to 22 is formed in a disk shape having substantially the same diameter, but the shape of each of the arrays 20 to 22 is not limited to this.
  • the shape of each of the arrays 20 to 22 may be any shape, but is preferably a shape such as a disk shape or a rectangular shape that allows easy alignment and dicing after lamination.
  • the present invention is applied to the lens module 10 used in the imaging device 30 of the wafer level chip size package.
  • the present invention is not limited to this, and the present invention is not limited to this.
  • the lens module may be applied to a lens module for any other purpose as long as it is a lens module in which lenses are stacked.
  • Imaging device 31 Solid-state imaging device chip 31a Imaging device

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Lens Barrels (AREA)
  • Studio Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention vise à supprimer les augmentations de coût dans un module d'objectif même lorsqu'un filtre de coupure infrarouge est disposé dans le module d'objectif. A cet effet, l'invention porte sur un module d'objectif (10), qui est constitué par deux lentilles d'un premier WLL (11) et d'un second WLL (12), et un élément d'espacement (13) qui est interposé entre les deux lentilles. Un filtre de coupure infrarouge (14) pour retirer les rayons infrarouges inclus dans la lumière de transmission est disposé sur une surface de l'élément d'espacement (13). Une ouverture (15) pour arrêter une lumière qui est inutile pour la réalisation d'image est située sur l'autre surface de l'élément d'espacement (13). Par conséquent, ni substrat spécial pour former le filtre de coupure infrarouge (14) ni élément d'espacement pour supporter le substrat spécial ne sont additionnellement requis, et aucune augmentation du nombre de composants et des processus de fabrication ne se produit, et, par conséquent, les augmentations de coût dans le module d'objectif (10) peuvent être supprimées même lorsque le filtre de coupure infrarouge (14) est disposé dans le module d'objectif (10).
PCT/JP2012/054191 2011-02-28 2012-02-22 Module d'objectif et dispositif de réalisation d'image Ceased WO2012117904A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011043215A JP2014102262A (ja) 2011-02-28 2011-02-28 レンズモジュール及び撮像装置
JP2011-043215 2011-02-28

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WO2012117904A1 true WO2012117904A1 (fr) 2012-09-07

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JP2018200980A (ja) * 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置および固体撮像素子、並びに電子機器
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WO2025187218A1 (fr) * 2024-03-04 2025-09-12 Ａｇｃ株式会社 Élément optique

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