WO2012140253A1 - Procédés et dispositif destinés au traitement thermique de substrats - Google Patents

Procédés et dispositif destinés au traitement thermique de substrats Download PDF

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Publication number
WO2012140253A1
WO2012140253A1 PCT/EP2012/056903 EP2012056903W WO2012140253A1 WO 2012140253 A1 WO2012140253 A1 WO 2012140253A1 EP 2012056903 W EP2012056903 W EP 2012056903W WO 2012140253 A1 WO2012140253 A1 WO 2012140253A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
radiation
thermal treatment
energy input
locally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/056903
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German (de)
English (en)
Inventor
Harald Gross
Volker Linss
Jörg NEIDHARDT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Von Ardenne Anlagentechnik GmbH
Original Assignee
Von Ardenne Anlagentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Von Ardenne Anlagentechnik GmbH filed Critical Von Ardenne Anlagentechnik GmbH
Publication of WO2012140253A1 publication Critical patent/WO2012140253A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Definitions

  • the invention relates to a method for thermal
  • RTP Rapid Thermal Processing
  • Annealing is the heating of the corresponding one
  • the entire substrate is usually heated. These processes typically last from a few minutes to hours.
  • Standard processes are not suitable for such substrates or even complex layer sequences on substrates that change or are even destroyed when exposed to temperature, if only a specific functional layer is supposed to be changed by the effect of temperature.
  • Ion implantation be cured without changing the already existing doping profile.
  • Silicon surfaces oxidized or amorphous silicon converted into polycrystalline silicon are characterized by adjustable low penetration depths of energy, so that e.g. only superficial areas or a coating can be influenced.
  • Layers strong, e.g. several hundred to over a thousand degrees Celsius, to heat while the substrate only to a depth of a few microns to heat. Further lying in depth layers or areas of the substrate remain at room temperature. The prerequisite is that the material to be heated absorbs the light and thus a temperature increase is possible.
  • KR1020090056671A describes an arrangement of different heating lamps and of masks between these lamps and the substrate, which makes the radiation emitted by the lamps impinge particularly uniformly on the substrate.
  • Laser structuring used.
  • a photosensitive layer is deposited on the substrate, subsequently with the aid of a so-called photomask, ie a shadow mask, which has been produced by structuring a light-reflecting layer
  • This photosensitive layer on a transparent base, exposed and developed. After the development of the exposed This photosensitive layer is then again for targeted treatment (such as structuring or
  • Desired structures are thus always transferred to the substrate indirectly and using a sequence of different, sometimes very cost-intensive processes.
  • the object of the present invention is now to provide a method and a device for the thermal treatment of
  • RTP Rapid Thermal Processing
  • Radiation means move in the range of several ten kilowatts, which means high temperature rise rates of usually one hundred to several hundred Kelvin per
  • the periods of exposure to radiation termed exposure time, can be kept very low.
  • the exposure time is determined by the desired exposure time
  • Penetration depth the desired feature sizes and the thermal properties of the material of the substrate and optionally superficial coatings determined.
  • Penetration depth and structure width are determined by the heat conduction in the substrate and optionally heat transfer between layers of different materials, so that the exposure time must be small enough to limit the lateral and depth extent of the thermal treatment well during treatment and during cooling due to the Heat propagation in the substrate does not blur the structure depths and structure widths.
  • Dependence on the structure of a layer system are e.g. with exposure times of 1ms structure widths of about 10pm to 50pm to achieve.
  • Heating the environment depends. The higher the temperature
  • a power density of at least 1000 W / cm 2 has proven to be advantageous.
  • the method according to the invention is not intended to be limited to the ranges indicated above, but it may also be based on a further development of the customary RTP processes and systems which lead to even higher powers
  • the substrate is locally defined thermally treated and thus locally differentiated in its structure changed: Different areas on the
  • Energy input density i.e., the energy input per area
  • the locally defined thermal treatment which can also be referred to as "microtempering" involves a prior definition of the necessary
  • the RTP device used to implement the RTP ("Rapid Thermal Processing") method of the present invention includes a Radiation means can be produced with the high radiation powers, a radiation medium opposite the substrate, and means for the defined local variation of the energy input into the substrate. These are like that
  • the radiation means is designed such that subregions of the substrate can be limited to less than 100 microns with energy input deviating from neighboring regions. Furthermore, the radiation means is designed such that
  • the local variation of the energy input into the substrate opposite the radiation medium can be achieved by appropriate localization
  • Variation of the power of the radiation medium itself or by using additional tools for focusing and / or to hide the radiation generated by the radiation means can be achieved.
  • the RTP device has radiation means capable of producing a power density of 1000 W / cm 2 and more during an exposure time.
  • the required high power densities are achieved with short switching times for the required low exposure times.
  • flashlamps exposure times are achievable, which are in areas to less than a tenth of a millisecond.
  • the radiation required for the thermal treatment of the substrate can optionally be generated either only by the flash lamp or by a flashlamp in combination with others
  • Exposure times less than ten milliseconds, and in particular less than a millisecond, allow a very localized energy input because, as stated above, the heating of not desired areas of the substrate as well as the entire environment of the substrate of the process times dependent.
  • the device contains means for limiting the
  • Substrate material and / or depth profiles in the substrate allows.
  • a shadow mask i.e. a partially transparent mask
  • the substrate whose base consists of a material which is transparent to the radiation emitted by the radiation means.
  • a shadow mask i.e. a partially transparent mask
  • radiation-reflecting layer has been applied and structured so that they are openings exactly to the
  • This shadow mask contains the specified The "energy input structure" which the substrate should have after the thermal treatment with the method according to the invention is specifically designed, ie corresponding shadow masks are created for different uses of this device.
  • the specific shadow mask which determines in which positions the substrate is to be locally thermally treated, is introduced between the radiation agent and the substrate to be treated.
  • the radiation-reflecting layer on the substrate only leads there to a local energy input and thus for example to a local annealing process.
  • the light is reflected back through the transparent base body of the shadow mask and thus does not lead to any heating of the surface of the shadow mask
  • Regions of the substrate is avoided. It can do that
  • a shadow mask is used for this purpose, which has a base body made of quartz glass and an aluminum-containing radiation-reflecting layer.
  • a base body made of quartz glass and an aluminum-containing radiation-reflecting layer.
  • an aluminum layer with a thickness of approximately 100 nm is possible here.
  • Other materials such as silver can also be used as the radiation-reflecting layer.
  • a basic body for such a shadow mask should be first material transparent to the radiation used and for the structural radiation-reflecting layer located on the base body a material which is ideally totally reflective for the radiation used is used.
  • the radiation means during its thermal treatment temporally and / or spatially its
  • Radiation intensity vary.
  • simple "energy input structures" to be generated these can be achieved solely by means of this variation of the radiation intensity, or the variation of the radiation intensity can be combined with the use of a shadow mask, in order to obtain more complicated "energy input structures"
  • the radiation means a plurality of individual radiation bodies. This allows a simple generation of radiation with locally variable intensities, if in this embodiment, each individual luminous body of the radiation means can be controlled independently.
  • divergent radiation is used.
  • Embodiment variant results in a variety of simple implementation options of radiation generation. This is particularly favorable if, as in this method, it must be taken into account that the emitted radiation is suitable for rapid heating of the substrate
  • Radiation means Such a radiation means are relatively simple in construction, can illuminate larger areas if necessary and there is a wider choice of radiation means which can be used for the respective purpose: these radiation means can be non-continuous as well as continuous. In addition to radiating in the visible range radiation may possibly also in
  • a possible special device according to the invention which allows substrates with divergent radiation of a
  • thermally treated to defined wavelength range contains for this purpose between the radiation means and substrate positioned at least one filter for suppressing
  • a filter for UV radiation in the device according to the invention between the radiation means and the substrate is arranged for this purpose.
  • a regular float glass used in window construction can be used as a filter.
  • the substrate and / or the radiation medium is moved during the thermal treatment. This provides another way to localize the energy input
  • the radiation generated by the radiation means more or less long time more or less intense at a
  • Device Means for moving the Substrate and / or the radiation during the
  • Radiation intensity can be done.
  • Method is the thermal treatment of the substrate in an inert gas atmosphere, i. in the presence of gases, with which the substrate material does not react even at high temperatures, is carried out in order to avoid a chemical change of the substrate material due to the influence of the environmental elements during the thermal treatment.
  • the process of the invention finds the thermal
  • a particular embodiment of the device according to the invention comprises means for the controlled supply of gases into the device and for the controlled evacuation of gases from the device.
  • the corresponding means for the controlled supply of gases into the device and for the controlled evacuation of gases from the device.
  • the means for the controlled supply of gases can thereby gas lines with be controllable valves.
  • a pump system can be used for controlled evacuation.
  • the method according to the invention and the RTP device used therefor can be used for various local purposes
  • the local changes in the substrate may be local
  • Partial areas of the substrate with gases from the atmosphere of the device or a local influence on the etching behavior are such substrate properties that are readily modifiable by energy input. Also combinations of these
  • TCO Transparent Conductive Oxide layer
  • isolating TCO arise.
  • a layer to be thermally treated can be previously coated on the substrate by one of the usual methods, e.g. PVD, CVD or wet-chemically deposited.
  • PVD photosensitive material
  • CVD chemical vapor deposition
  • Another use according to the invention is the local reaction of a substrate with gases from the atmosphere surrounding the substrate. In this case, a reaction takes place only at the positions of the substrate at which the local
  • the area of application for this is the local oxidation of the substrate to be treated in an oxidizing atmosphere.
  • FIG. 1 shows a variant of the
  • Radiation means extending over the entire width of the RTP chamber 1 flash lamp 2 and a substrate 6, which also occupies the entire width of the RTP chamber 1 and is to receive a local energy input at previously defined positions 7.
  • This substrate can be inserted through a closable opening 9 in a side wall of the RTP chamber in this and through a further closable opening 9 'in the
  • Substrates may be in which the substrate of one
  • Prechamber in which a pre-processing has taken place, is introduced into the RTP chamber according to the invention and can be further processed in a subsequent chamber after performing the method according to the invention.
  • a shadow mask 3 is positioned between the flash lamp 2 and the substrate 6, which consists of a base body 4 made of quartz glass, which is a
  • Shadow mask 3 can be turned away when not in use in the RTP device chamber 1 or can be removed from the RTP device chamber 1 via a closable opening 8 in the side wall.
  • the shadow mask 3 contains by her
  • the corresponding information about at which positions 7 of the substrate 6 in carrying out the corresponding method of energy input by the of the flash lamp 2 emitted radiation is completed.
  • the shadow mask 3 is ideally in contact with the substrate 6 or as close as possible to the latter, as otherwise it would lead to a broadening of the structures
  • Shadow mask 3 comes or the edge areas of
  • This device and a corresponding method can now be used in a first application example to set a desired resistance distribution on a substrate 6, and thus to improve the current flow in large-area OLEDs or electrochromic coatings by local and gradual annealing of the corresponding layer, so that in the case of illumination or no switching
  • large substrate surfaces in continuous systems are treatable, wherein the resistance structures by varying the power of the radiation means 2, the individual light elements or
  • Luminous areas can be controlled independently of each other, can be set when running alone or through the additional use of shadow masks 3 during processing in the system.
  • the additional use of shadow masks 3 during processing in the system can be set independently of each other, can be set when running alone or through the additional use of shadow masks 3 during processing in the system.
  • deposited layer of a TCO that is a so-called cold deposited TCO such as e.g. an aluminum-doped zinc oxide (ZnO: Al) on a substrate 6 by a local
  • the shadow mask 3 is brought into position in the RTP chamber 1 between the TCO layer containing substrate 6 and the radiation means 2 in position and the TCO layer again and with significantly higher performance of
  • Annealed radiation means, wherein in this step, the local energy input at each position 7 of the TCO layer is determined by the shadow mask 3. With the significantly "over-tempered” TCO areas can now larger
  • the transparent conductive material is deposited and then, at the locations where the material is not required, with the aid of an etching mask, which was previously used e.g. by means of a
  • the electrical properties are instead changed locally by a local input of energy in a layer obtained in total.
  • Shadow mask 3 to protect the organics from damage.
  • the local oxidation of a silicon wafer represents a further field of application of the method according to the invention and of a corresponding device.
  • the silicon substrate 6 is penetrated by a shadow mask 3, on which the desired structures are imaged Flash lamp 2 irradiated while it is in a strong oxidizing atmosphere.
  • a shadow mask 3 on which the desired structures are imaged Flash lamp 2 irradiated while it is in a strong oxidizing atmosphere.
  • the resulting silicon oxide structures can be used as a mask for the etching of the still uncovered silicon silicon regions of the wafer. This kind of
  • Substrate materials or layer materials on substrates 6 in other reactive gas atmospheres transferable are present.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un procédé destiné au traitement thermique de substrats, qui implique la mise en œuvre d'un processus de traitement thermique rapide (RTP), un dispositif de RTP ainsi que l'utilisation d'un tel procédé et d'un tel dispositif pour modifier des substrats par un apport d'énergie. La présente invention a pour but de mettre au point un procédé et un dispositif permettant de doter simultanément et rapidement ledit substrat de structures complexes induites par voie thermique. A cet effet, il est prévu d'utiliser un procédé consistant à soumettre le substrat (6) à un traitement thermique de manière définie localement, une ou plusieurs zones partielles du substrat (6) étant exposées au rayonnement d'un moyen d'irradiation (2) pendant une période de l'ordre d'une milliseconde, au moyen d'un dispositif comprenant des moyens permettant de faire varier localement de manière définie l'apport d'énergie dans ledit substrat, l'apport d'énergie dans ledit substrat (6) étant limité à des zones partielles dont la largeur est inférieure à 100 micromètres.
PCT/EP2012/056903 2011-04-15 2012-04-16 Procédés et dispositif destinés au traitement thermique de substrats Ceased WO2012140253A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011007544.5 2011-04-15
DE102011007544A DE102011007544A1 (de) 2011-04-15 2011-04-15 Verfahren und Vorrichtung zur thermischen Behandlung von Substraten

Publications (1)

Publication Number Publication Date
WO2012140253A1 true WO2012140253A1 (fr) 2012-10-18

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WO (1) WO2012140253A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111004998A (zh) * 2019-12-05 2020-04-14 深圳市华星光电半导体显示技术有限公司 蒸镀装置及其掩膜板的制备方法
US20240105473A1 (en) * 2022-09-23 2024-03-28 Shanghai Huahong Grace Semiconductor Manufacturing Corporation Optical Annealing Apparatus And Method For Forming Semiconductor Structure

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105445312B (zh) * 2015-01-04 2019-08-16 宁波英飞迈材料科技有限公司 微区加热装置
DE102015100885A1 (de) 2015-01-22 2016-07-28 Von Ardenne Gmbh Verfahren und Vorrichtung zur Behandlung eines beschichteten Substrats
DE102015115030A1 (de) 2015-09-08 2017-03-09 Von Ardenne Gmbh Verfahren zum Entfernen einer Schicht von einem Substrat und dessen Verwendung
DE102022100149A1 (de) 2022-01-04 2023-07-06 Heliatek Gmbh Verfahren zur Herstellung einer photoaktiven Schicht in einem Schichtsystem eines organischen elektronischen Bauelements

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6319759B1 (en) * 1998-08-10 2001-11-20 International Business Machines Corporation Method for making oxide
US6537927B1 (en) * 1998-11-04 2003-03-25 Hynix Semiconductor, Inc. Apparatus and method for heat-treating semiconductor substrate
US20040211356A1 (en) * 1993-11-05 2004-10-28 Shunpei Yamazaki Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
DE102007052782A1 (de) * 2007-11-02 2009-05-07 Limo Patentverwaltung Gmbh & Co. Kg Verfahren zur Veränderung der Eigenschaften einer TCO-Schicht
US20090114619A1 (en) * 2005-11-18 2009-05-07 Mitsubishi Gas Chemical Company Inc. Wet etching method and wet etching apparatus
KR20090056671A (ko) 2007-11-30 2009-06-03 주식회사 하이닉스반도체 웨이퍼를 어닐링하는 급속 열처리 장치 및 방법
EP2073269A1 (fr) * 2007-12-21 2009-06-24 Helianthos B.V. Procédé pour la fourniture d'une connexion en série dans un système de cellule solaire
DE102008009337A1 (de) 2008-02-14 2009-08-20 Von Ardenne Anlagentechnik Gmbh Verfahren zur Herstellung einer transparenten leitfähigen Schicht
WO2009111340A2 (fr) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Cristallisation de recuit par lampe flash pour films minces à large surface
US20100074604A1 (en) * 2008-04-09 2010-03-25 Applied Materials, Inc. Apparatus and Method for Improved Control of Heating and Cooling of Substrates

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4333155A1 (de) * 1993-09-29 1995-03-30 Siemens Ag RTP-Verfahren mit erhöhter Reaktionsrate
AU2452697A (en) * 1996-04-10 1997-10-29 Penn State Research Foundation, The Modifying solid crystallization kinetics for a-si films
KR20000026191A (ko) * 1998-10-19 2000-05-15 김규현 반도체 기판의 급속 열처리 방법 및 그 장치
DE102004042300A1 (de) * 2004-08-27 2006-03-30 Infineon Technologies Ag Lithographieverfahren zur Herstellung hochaufgelöster Fotoresiststrukturen durch Wärmebestrahlung
US7685557B2 (en) * 2006-10-05 2010-03-23 International Business Machines Corporation Radiation mask with spatially variable transmissivity
WO2008091613A1 (fr) * 2007-01-25 2008-07-31 Btu International, Inc. Traitement thermique rapide au plasma et hybride micro-onde de plaquettes semi-conductrices

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US20040211356A1 (en) * 1993-11-05 2004-10-28 Shunpei Yamazaki Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6319759B1 (en) * 1998-08-10 2001-11-20 International Business Machines Corporation Method for making oxide
US6537927B1 (en) * 1998-11-04 2003-03-25 Hynix Semiconductor, Inc. Apparatus and method for heat-treating semiconductor substrate
US20090114619A1 (en) * 2005-11-18 2009-05-07 Mitsubishi Gas Chemical Company Inc. Wet etching method and wet etching apparatus
DE102007052782A1 (de) * 2007-11-02 2009-05-07 Limo Patentverwaltung Gmbh & Co. Kg Verfahren zur Veränderung der Eigenschaften einer TCO-Schicht
KR20090056671A (ko) 2007-11-30 2009-06-03 주식회사 하이닉스반도체 웨이퍼를 어닐링하는 급속 열처리 장치 및 방법
EP2073269A1 (fr) * 2007-12-21 2009-06-24 Helianthos B.V. Procédé pour la fourniture d'une connexion en série dans un système de cellule solaire
DE102008009337A1 (de) 2008-02-14 2009-08-20 Von Ardenne Anlagentechnik Gmbh Verfahren zur Herstellung einer transparenten leitfähigen Schicht
WO2009111340A2 (fr) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Cristallisation de recuit par lampe flash pour films minces à large surface
US20100074604A1 (en) * 2008-04-09 2010-03-25 Applied Materials, Inc. Apparatus and Method for Improved Control of Heating and Cooling of Substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111004998A (zh) * 2019-12-05 2020-04-14 深圳市华星光电半导体显示技术有限公司 蒸镀装置及其掩膜板的制备方法
US20240105473A1 (en) * 2022-09-23 2024-03-28 Shanghai Huahong Grace Semiconductor Manufacturing Corporation Optical Annealing Apparatus And Method For Forming Semiconductor Structure

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