WO2012141484A3 - 보울-형태 구조체, 이의 제조 방법, 및 보울 어레이 - Google Patents

보울-형태 구조체, 이의 제조 방법, 및 보울 어레이 Download PDF

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Publication number
WO2012141484A3
WO2012141484A3 PCT/KR2012/002735 KR2012002735W WO2012141484A3 WO 2012141484 A3 WO2012141484 A3 WO 2012141484A3 KR 2012002735 W KR2012002735 W KR 2012002735W WO 2012141484 A3 WO2012141484 A3 WO 2012141484A3
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WO
WIPO (PCT)
Prior art keywords
bowl
shaped structure
substrate
array
template
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/002735
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English (en)
French (fr)
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WO2012141484A2 (ko
Inventor
윤경병
김현성
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry University Cooperation Foundation of Sogang University
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Industry University Cooperation Foundation of Sogang University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Industry University Cooperation Foundation of Sogang University filed Critical Industry University Cooperation Foundation of Sogang University
Priority to US14/111,468 priority Critical patent/US9956740B2/en
Publication of WO2012141484A2 publication Critical patent/WO2012141484A2/ko
Publication of WO2012141484A3 publication Critical patent/WO2012141484A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/04—Networks or arrays of similar microstructural devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00373—Selective deposition, e.g. printing or microcontact printing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

본원은, 입자의 정렬층이 형성된 제 1 기재와 제 2 기재를 접촉시켜 상기 입자의 정렬층을 상기 제 2 기재로 전사(transfer)하는 단계; 상기 제 2 기재 상에 전사된 입자의 정렬층을 박막 형성 물질로 코팅하여 입자-박막 복합체를 형성하는 단계; 상기 복합체 중 박막 형성 물질의 일부를 제거하여 상기 입자를 노출시킨 후 상기 노출된 입자를 제거하여 홀(hole)을 가지는 주형(template)을 형성하는 단계; 및 상기 주형의 홀 표면에 제 1 물질을 코팅한 후 상기 주형을 제거하여 보울(bowl)-형태의 구조체를 형성하는 단계: 를 포함하는, 보울(bowl)-형태 구조체의 제조방법, 상기 방법에 의하여 제조된 보울(bowl)-형태 구조체, 및 상기 보울(bowl)-형태 구조체를 이용한 보울 어레이를 제공한다.
PCT/KR2012/002735 2011-04-11 2012-04-10 보울-형태 구조체, 이의 제조 방법, 및 보울 어레이 Ceased WO2012141484A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/111,468 US9956740B2 (en) 2011-04-11 2012-04-10 Bowl-shaped structure, method for manufacturing same, and bowl array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110033418A KR101255780B1 (ko) 2011-04-11 2011-04-11 보울-형태 구조체, 이의 제조 방법, 및 보울 어레이
KR10-2011-0033418 2011-04-11

Publications (2)

Publication Number Publication Date
WO2012141484A2 WO2012141484A2 (ko) 2012-10-18
WO2012141484A3 true WO2012141484A3 (ko) 2013-01-10

Family

ID=47009827

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/002735 Ceased WO2012141484A2 (ko) 2011-04-11 2012-04-10 보울-형태 구조체, 이의 제조 방법, 및 보울 어레이

Country Status (3)

Country Link
US (1) US9956740B2 (ko)
KR (1) KR101255780B1 (ko)
WO (1) WO2012141484A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101407080B1 (ko) * 2012-11-29 2014-06-12 아주대학교산학협력단 입자 정렬을 이용한 코팅 방법 및 이에 의해 제조된 입자 코팅 기판
JP6265571B2 (ja) * 2013-06-07 2018-01-24 エルジー・ケム・リミテッド 金属ナノ粒子
KR102264386B1 (ko) * 2014-04-09 2021-06-16 주식회사 에이엔케이 입자 정렬을 이용한 코팅 방법 및 이에 의해 제조된 입자 코팅 기판
KR102353553B1 (ko) * 2014-04-24 2022-01-21 주식회사 에이엔케이 입자 정렬을 이용한 코팅 방법 및 이에 의해 제조된 입자 코팅 기판
KR101768275B1 (ko) 2014-08-14 2017-08-14 주식회사 엘지화학 금속 나노입자의 제조방법
KR101767236B1 (ko) 2015-01-16 2017-08-10 고려대학교 산학협력단 나노다공성 고분자 멤브레인 및 그 제조방법
GB201509080D0 (en) 2015-05-27 2015-07-08 Landa Labs 2012 Ltd Coating apparatus
US11240918B2 (en) * 2018-08-28 2022-02-01 Research And Business Foundation Sungkyunkwan University Method for flip-chip bonding using anisotropic adhesive polymer
CN111017867B (zh) * 2019-11-21 2023-03-17 厦门大学 一种网络结构硅基点阵的制备方法及其应用
CN118239445B (zh) * 2024-02-22 2025-03-21 杭州邦齐州科技有限公司 一种周期性碗状结构模板的制备方法

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US20050224779A1 (en) * 2003-12-11 2005-10-13 Wang Zhong L Large scale patterned growth of aligned one-dimensional nanostructures
KR20090076568A (ko) * 2008-01-09 2009-07-13 고려대학교 산학협력단 나노스피어 형틀 형태의 나노임프린트용 템플릿 제조 방법,이를 이용한 단일층 나노스피어 고분자 패턴 형성 방법 및상기 단일층 나노스피어 패턴을 이용한 응용방법
US20100245978A1 (en) * 2007-05-23 2010-09-30 Jeremy John Baumberg Colour change material and method of manufacture thereof
KR20110007814A (ko) * 2009-07-17 2011-01-25 포항공과대학교 산학협력단 수직 배열된 나노튜브의 제조방법, 센서구조의 제조방법 및 이에 의해 제조된 센서소자

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KR20100076571A (ko) * 2008-12-26 2010-07-06 한국과학기술원 콜로이드 입자 막의 고분자 막 내로의 함침을 이용한 배열된 구형 미세 공극 및 금속 구조의 제조방법
WO2010117102A1 (ko) 2009-04-09 2010-10-14 서강대학교 산학협력단 콜로이드 입자들을 단결정들로 정렬하는 방법
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050224779A1 (en) * 2003-12-11 2005-10-13 Wang Zhong L Large scale patterned growth of aligned one-dimensional nanostructures
US20100245978A1 (en) * 2007-05-23 2010-09-30 Jeremy John Baumberg Colour change material and method of manufacture thereof
KR20090076568A (ko) * 2008-01-09 2009-07-13 고려대학교 산학협력단 나노스피어 형틀 형태의 나노임프린트용 템플릿 제조 방법,이를 이용한 단일층 나노스피어 고분자 패턴 형성 방법 및상기 단일층 나노스피어 패턴을 이용한 응용방법
KR20110007814A (ko) * 2009-07-17 2011-01-25 포항공과대학교 산학협력단 수직 배열된 나노튜브의 제조방법, 센서구조의 제조방법 및 이에 의해 제조된 센서소자

Also Published As

Publication number Publication date
WO2012141484A2 (ko) 2012-10-18
KR20120115849A (ko) 2012-10-19
US20140141184A1 (en) 2014-05-22
KR101255780B1 (ko) 2013-04-17
US9956740B2 (en) 2018-05-01

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