WO2012143257A1 - Dispositif et procédé de dépôt de couches semi-conductrices sous apport de hcl pour éliminer la croissance parasitaire - Google Patents

Dispositif et procédé de dépôt de couches semi-conductrices sous apport de hcl pour éliminer la croissance parasitaire Download PDF

Info

Publication number
WO2012143257A1
WO2012143257A1 PCT/EP2012/056418 EP2012056418W WO2012143257A1 WO 2012143257 A1 WO2012143257 A1 WO 2012143257A1 EP 2012056418 W EP2012056418 W EP 2012056418W WO 2012143257 A1 WO2012143257 A1 WO 2012143257A1
Authority
WO
WIPO (PCT)
Prior art keywords
component
process chamber
gas
zone
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/056418
Other languages
German (de)
English (en)
Inventor
Daniel Brien
Martin Dauelsberg
Gerhard Karl Strauch
Dirk Fahle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of WO2012143257A1 publication Critical patent/WO2012143257A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials

Definitions

  • DE 102007009145 AI describes a device according to the preamble of claim 1.
  • the device described there for performing a MOCVD method has three superimposed gas inlet zones through which different process gases can be introduced into the process chamber. Through a gas inlet zone adjacent to the susceptor, NH3, a gas inlet zone adjacent to the process chamber ceiling, inter alia HCl and through a gas inlet zone located therebetween organometallic component introduced. The introduction of the process gases takes place together with a carrier gas.
  • No. 7,585,769 B2 describes a device or a method for depositing III-V semiconductor layers on a substrate in a reactor housing.
  • the process gases introduced into the process chamber of the reactor housing contain a hydride, for example ammonia, an organometallic component, for example trimethylgallium, and a halogen component, for example hydrogen chloride.
  • the apparatus has a gas inlet member disposed vertically above a susceptor which extends in the vertical direction and carries a substrate which is heated to a process temperature using heaters.
  • the halogen component should either be introduced together with the other process gases or separately into the process chamber and there should prevent or suppress the formation of particles in the gas phase.
  • US 4,961,399 A describes an apparatus for depositing III-V layers on a plurality of substrates arranged around a center of a rotationally symmetrical process chamber.
  • a gas inlet member is arranged in the center of the process chamber and serves to introduce a hydride, for example NH3, A5H3 or PH3.
  • organometallic compounds which may be, for example, TMGa, TMIn or TMA1 are introduced into the process chamber through the gas inlet element.
  • a carrier gas in particular in the form of hydrogen, is introduced into the process chamber.
  • the susceptor is heated from below. This can be done by means of thermal radiation, by means of high-frequency coupling or otherwise.
  • a useful heater which is arranged below the susceptor is described in DE 102 47921 AI. at In such a CVD reactor, the process chamber extends in a horizontal direction, is bounded below by a susceptor and at the top by a ceiling plate.
  • DE 10 163 394 A1, DE 10 2006 018 515 A1 and US 2008/0132040 Al describe the use of HCl for etching the process chamber after a coating process or the use of HCl as a transport gas for gallium or indium in an HVPE process
  • DE 10 2004 009 130 A1 describes a MOCVD reactor with a process chamber arranged symmetrically about a central gas inlet member. Trimethylgallium and ammonia are introduced into the process chamber together with hydrogen.
  • the process gases are introduced into the process chamber at an inlet temperature that is at room temperature or below 100 ° Celsius.
  • the ceiling of the process chamber is kept at a ceiling temperature of less than 500 ° Celsius.
  • the substrate temperature is in the range of about 1000 ° Celsius. Depending on the process gas used or the desired process success, these temperatures vary by 50 ° to 100 ° Celsius.
  • the process gases introduced into the process chamber and the carrier gas are heated. This is done essentially via heat conduction. The heat is introduced via the contact of the carrier gas with the process chamber ceiling or the susceptor in the gas phase.
  • the growth zone adjoining the flow zone is - according to previous knowledge - the area within the process chamber, within which at least the III component is almost completely decomposed, that is essentially only decomposition products or only metal atoms in the gas phase are present. These diffuse from the volumetric flow above the substrates arranged in the growth zone in the direction of the substrate surface, where the decomposition products are completely decomposed and the hydride decomposes stoichiometrically. Growth is described in previous theories of a boundary-layer diffusion model.
  • the offer, ie the partial pressure of the III component is selected such that the decomposition products are pyrolytically deposited on the substrate surface in the form of a crystal.
  • the surface of the substrate is therefore also monocrystalline.
  • DE 10 2004 009 130 A1 shows on the basis of FIG. 2 that the growth rate within the growth zone decreases in the direction of flow.
  • a suitable process management can be a straight line of the decrease of Set growth rate.
  • the reason for the decline in the growth rate is the steady depletion of the gas phase due to the actual growth process. If the substrates are rotated by rotating substrate holders, this depletion effect can be compensated.
  • Homogeneous layer growth on the substrates lying on rotationally driven substrate holders requires a substantially linear course of the depletion curve or the growth rate in the growth zone in which the at least one substrate lies.
  • the process parameters such as gas flows, total gas pressure and temperature must be set so that the maximum of the growth rate in a zone immediately before the growth zone, ie at the downstream end of the flow zone. This has the consequence that in the course of the growth process immediately before the growth zone parasitic layer growth takes place on the susceptor surface.
  • Such layer growth is disadvantageous for at least two reasons.
  • the gas inlet member is cooled by a cooling device to an inlet temperature which is below the decomposition temperature of the process gases.
  • the process gas enters the process chamber through gas inlet zones arranged vertically one above the other.
  • the process gas passes in the horizontal direction a flow zone within which the process gases can mix. Since the hydride and the halogen component are vertically spaced apart at different levels in the process chamber are introduced, meet halogen component and hydride only at a horizontal distance downstream of the inlet zone within the flow zone to each other.
  • the halogen component flows separately from the other prosyst gases directly above the susceptor, ie in the lowermost gas layer into the process chamber, the halogen component concentration in the lowermost gas layer immediately above the susceptor is highest.
  • the halogen component thus develops a somewhat corrosive effect in the flow zone.
  • metal halide components or compounds of the decomposition products of the organometallic component with the halogen component which are volatile, form within the gas phase above the susceptor. As it flows through the flow zone, the hydride and the halogen component diffuse toward one another.
  • the gases have already been heated in such a way that the gas temperature is above a reaction temperature at which the hydride and the halogen component react with one another to form a solid.
  • the location at which the halogen component and the hydride first come into contact with each other is alternatively or even within an adduct formation zone, ie in a region of the process chamber in which the gas temperature lies within an adduct formation temperature range.
  • Such adducts are formed, in particular, between ammonia and decomposition products of TMGa, TMA1 or TMIn.
  • the inlet zone for the V or VI component is located directly below the process chamber ceiling.
  • the process chamber ceiling is thermally insulated from the cooled gas inlet member.
  • the process chamber ceiling can be actively heated, to which the process chamber ceiling is assigned a separate heating device. But it is also possible that the process chamber ceiling is only passively heated.
  • the susceptor is provided with a heater, such as a water-cooled RF coil heats and radiates heat that heats the process chamber ceiling.
  • the gas inlet member may be located in the center of a rotationally symmetrical planetary reactor.
  • the susceptor forms a plurality of circular disk-like substrate holders surrounding the gas inlet member, which support one or more substrates and which are rotated about their axis during growth.
  • the gas inlet element fed from above lies in the center of the process chamber.
  • the precursor zone of the susceptor is coated with decomposition products of the process gases, in particular decomposition products of TMGa, TMA1 or TMIn, this parasitic growth is reduced by targeted introduction of the halogen component in the surface area of the particular ring-shaped precursor zone.
  • the halogen component is preferably a hydrogen halide component and especially HCl. But it can also be a gaseous halogen, for example Cl 2 .
  • the V component is preferably ammonia, arsine or phosphine.
  • the process according to the invention is carried out in the case of such process parameters, ie partial gas pressures of the process gases, such susceptor temperature, total gas flow and total pressure in which, without feed-in Halogen component parasitic growth takes place on a heated surface portion of the flow zone of the process chamber upstream of the substrate and on which the halogen component feed suppresses the parasitic growth.
  • the introduction of the halogen component, in particular of HCl, is greater to suppress the parasitic growth upstream of the substrates than is required to suppress parasitic nucleation processes in the gas phase.
  • the molar rate of the halogen component fed into the process chamber to the III component can be up to 70%.
  • the molar ratio between HCl flow and TMGa flow can be up to 1: 1 or even up to 2: 1.
  • HCl is offered in excess.
  • a high separation gas flow is fed between the V component inlet zone and the halogen component inlet zone.
  • the separation gas inlet zone can also have a greater height, so that the HCl diffusion to the hydride is reduced.
  • Fig. V Schematically a sectional view of a process chamber arranged in a reactor housing, not shown, which is flowed through in the horizontal direction of the process gas together with a gas mixing / supply device, in which only the
  • essential elements 2 the temperature profile in the flow direction at three different positions in the process chamber
  • FIG. 3 shows a solid line schematically the course of the growth rate over the flow direction without HCl feed and as a dashed line with HCl feed
  • FIG. 4 shows a plan view of a susceptor of a horizontal chamber reactor with a centric gas inlet element, wherein the flow zone V is indicated by a dashed line and a zone C by a dot-dash line between the dashed line, in which a parasitic occupancy takes place,
  • Fig. 6 the growth rate on the substrate as a function of the distance to the gas inlet member.
  • the gas mixing / supply device 34 shown in FIG. 1 has a hydride source 30, which in the exemplary embodiment is an ammonia source. It also has a source of an organometallic component 31, which in the exemplary embodiment is trimethylgallium. Furthermore, a halogen component source 32 of a halogen component is provided, which in the exemplary embodiment is HCl. Finally, the gas mixing / supply device 34 also has a carrier gas source 33, wherein the carrier gas is hydrogen.
  • the sources 30, 31, 32, 33 are shown as gas tanks. It may be a gas cylinder or a bubbler. Each gas source 30, 31, 32 is connected to a gas outlet, which can be closed by a valve 26, 27, 28, 29, which valves 26, 27, 28, 29 can be switched by a control device, not shown.
  • mass flow regulators 22, 23, 24, 25, Downstream of the valves 26, 27, 28, 29 are mass flow regulators 22, 23, 24, 25, with which a carrier gas stream or a stream of the hydride, the organometallic component or the halogen component is adjustable.
  • the mass flow controller 24 regulates a halogen component gas stream which is diluted with the carrier gas stream and which is fed through a halogen component feed line 21 to a halogen component inlet zone 10 of a gas inlet element 7.
  • mass flow controller 23 With the mass flow controller 23, the mass flow of an organometallic component, which can be promoted for example with a carrier gas from a bubbler, regulated.
  • this gas stream is diluted and replaced by a MO
  • the MO feed line 20 upstream of the MO inlet zone 9 is provided with valves 27 and mass flow controllers 23 such that it is not possible to introduce a halogen component from the halogen component source 32 or 32 during the feeding of the halogen component through the halogen component inlet zone 10 to pass a hydride from the hydride source 30 through the MO inlet zone 9.
  • the said gas inlet zones 8, 9, 10 are associated with a gas inlet member and, as is generally known from DE 10 2004 009 130 AI, arranged vertically one above the other.
  • the gas inlet member 7 is cooled. It has partitions 12, 13, an upper wall 14 and a lower wall, in which a cooling liquid channel 11 is shown. Preferably, all partitions 12, 13, 14 are liquid-cooled and have this cooling liquid channels.
  • the gas inlet member 7 forms the gas inlet zone E. By means of cooling water, the gas inlet member 7 can be maintained at temperatures in the range below 250 ° C or 300 ° C.
  • the heights of the hydride inlet zone 8, the separation gas inlet zone 9 and the halogen component inlet zone 10 may have the height ratio 1: 2: 1.
  • the height ratio 1: 3: 1 is provided.
  • a feed zone V connects to the inlet zone E.
  • the flow zone V extends over a heated wall portion 15 of the susceptor 2.
  • the heating of the susceptor 2 via an RF heater 18 in the form of a water-cooled induction coil, which is arranged below the susceptor 2.
  • eddy currents are thereby produced, which leads to a heating of the susceptor 2.
  • the growth zone G Downstream of the flow zone V extends the growth zone G, in which one or more substrate holders 3 are arranged.
  • a circular disk-shaped substrate holder 3 is shown, which rests in a recess 5 of the susceptor 2 and which is rotated on a gas cushion during the implementation of the method.
  • a substrate 4 to be coated On the substrate holder 3 there is a substrate 4 to be coated whose substrate temperature T s can be regulated to a value typically between 900 and 1100 ° C.
  • the hot susceptor 2 heats the process chamber 1 to a temperature T c .
  • a gas temperature TB sets in, which is between the process chamber ceiling temperature T c and the substrate temperature T s .
  • the process chamber shown schematically in FIG. 1 has a circular susceptor 2, which concentrically surrounds the likewise gas-symmetrical gas inlet member 7.
  • the vertical spacing of the partitions 12, 13, which defines the height of the MO inlet zone 9, is chosen such that the diffusion boundary layer D shown in dashed lines in FIG. 1 is formed.
  • the diffusion boundary layer D symbolizes the boundary up to which halogen components introduced from the halogen component inlet zone 10 in the upstream zone to the hydrofluid flow and introduced through the hydride inlet zone 8 diffuse downwards in the direction of the halogen component.
  • the hydrides or halogen components thereby diffuse into a separation gas flow which enters the process chamber through the separation gas inlet zone 9.
  • the inlet zone 9 located between the hydride inlet zone 8 and the halogen component inlet zone 10 therefore forms a separating gas inlet zone through which, together with a carrier gas, the organometallic component is also introduced into the process chamber.
  • FIG. 2 schematically shows the profile of the temperature T s of the susceptor, the temperature TB of the gas approximately in the vertical center of the process chamber, and the temperature T c of the process chamber ceiling, in each case along the flow direction of the process gas. It can be seen that in the region of the preliminary zone V, the gas temperature has the lowest values. Thus, a cold finger forms approximately in the middle of the flow zone. At the end of the cold finger, where the halogen component comes into contact with the hydride, adducts are formed in the absence of the halogen component, inter alia, with the use of ammonia and TMGa.
  • the spatially separate inlet of the halogen component of the hydride leads process technology to an injection of the halogen component in an adduct formation volume, which lies in the zone M.
  • This adduct formation volume is doped with the halogen component, it being sufficient if a maximum of 250 ppm of the total amount of gas HCl or the HCl flow in the process chamber is below 10% of the MO gas flow.
  • the temperature T s of the susceptor 2 increases linearly in the region of the flow zone V and then proceeds substantially constantly in the region of the growth zone G and decreases again in the region of the outlet zone.
  • the temperature T c of the radiant-heated reactor ceiling 6 also increases continuously in the region of the flow zone V and runs in the Area of the growth zone G constant, and then drop off again in the region of the outlet zone A.
  • the gas temperature TB has substantially the same course as the temperatures T s and T c . However, it rises more steeply in the flow zone V than the temperature T c of the process chamber ceiling 6. It exceeds only in the zone M the temperature T c of the process chamber ceiling.
  • FIG. 3 qualitatively shows the progression of the growth rate in the direction of flow as a solid line without HCl feed and as a dashed line with HCl feed, the course of the growth rate curve substantially corresponds to the profile of the partial pressure of the metal of the II or III component in the gas phase. It can be seen that without HCl feed, the maximum of the growth rate r is in the feed zone V, immediately upstream of the growth zone G, ie in the gas mixing zone M. Without HCl feed, the growth rate r or the depletion curve of the Metal component in the growth zone G non-linear, so that it comes to inhomogeneous growth on the rotated during the deposition process substrates. The edge regions of the substrates have a higher layer thickness than the center of the substrates.
  • halogen component for example HCl
  • the halogen component can develop there a surface-etching effect, so that in the hot flow zone 15 parasitic growth can be suppressed.
  • the maximum of the growth rate shifts towards the downstream.
  • the depletion curve is linear. The latter can be attributed in particular to the reduced adduct formation due to the HCl feed.
  • the length of the growth zone G in the flow direction may be more than 150 mm. Within this length of the growth zone G, the gas phase depletion decreases in particular III component linearly, so that 4 layers with a homogeneous layer thickness can be deposited by rotating the substrate.
  • gallium nitrite was deposited at a substrate temperature Ts of 1050 ° C and at a process chamber ceiling temperature T c of 900 ° C at a respective same hydrogen carrier gas amount. This was done at residence times of 0.58 seconds, 1.01 seconds and 1.52 seconds. Radial depletion was measured by growth rates on a 4-inch sapphire substrate. Without the addition of HCl, the depletion curve is very inhomogeneous with high residence times and drops below one third even in the middle of the growth zone G. Due to the addition of only 2 sccm HCl, the depletion curves are essentially congruent for all three residence times.
  • U ⁇ H 2 tion of the process chamber is taken to ensure that the index remains constant, where U is the average gas velocity in all three inlet levels at the same pressure, H is the height of the central inlet, R is the radius of the gas inlet member 7 and D is the diffusion coefficient of the process gas in the gas mixture.
  • H the height of the central inlet
  • R the radius of the gas inlet member 7
  • D the diffusion coefficient of the process gas in the gas mixture.
  • halogen component in particular HCl
  • the metal-organic component mixed with the hydride can also be fed into the process chamber through a common gas inlet zone.
  • the ammonia partial pressure 95 mbar, the TMGa Partial pressure 0.073 mbar to 0.76 mbar correspond.
  • the growth rate saturates at a TMGa partial pressure of about 0.255 mbar.
  • the growth rate can be increased to values above 10 ⁇ / h.
  • TMGa were at a TMGa partial pressure of 0.35 mbar 13.8 ⁇ / h and at a TMGa partial pressure of 0.76 mbar 26.5 ⁇ / h achieved as a growth rate.
  • the measured surface temperature on the substrates was 1,065 ° C.
  • the gas inlet ensure a total gas flow of 82 slm (standard liters per minute) initiated. It contained a TMGa flow of about 0.6 mmol / min.
  • the molar ratio between the V component and the III component was 1244.
  • the NH3-FIUSS was 16.6 slm.
  • a growth rate of 2 ⁇ / h a layer was deposited on the substrate over a total time of two hours. The experiments were carried out without HCl feed and with different levels of HCl feeds.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif et un procédé pour déposer des couches semi-conductrices II- VI ou III-V sur un ou plusieurs substrats (4), ledit dispositif comprenant un boîtier de réacteur présentant une chambre de traitement (1) disposée dedans, un suscepteur (2) disposé dans la chambre de traitement (1) et conçu pour recevoir le substrat (4), un dispositif de chauffage (18) pour chauffer ledit suscepteur (2), une unité d'admission de gaz (7) dotée d'un dispositif de mélange de gaz et d'alimentation en gaz (34) qui présente une source (31) pour les composés organométalliques, une source (30) pour un hybride et une source pour les composés halogénés, les sources (30, 31, 32) étant reliées à l'unité d'admission de gaz (7) pour introduire les gaz présents dans des flux gazeux séparés les uns des autres dans la chambre de traitement (1) chauffée. Afin de réduire un dépôt parasite à la surface du suscepteur en amont du substrat, l'unité d'admission de gaz (7) présente plusieurs zones d'admission de gaz (8, 9, 10) séparées les unes des autres, une zone d'entrée de composés halogénés (10) qui est reliée à la source de composés halogénés (32) étant disposée en amont immédiatement avant la partie superficielle chauffée (15) de la chambre de traitement et jouxtant ladite partie superficielle au plus proche.
PCT/EP2012/056418 2011-04-18 2012-04-10 Dispositif et procédé de dépôt de couches semi-conductrices sous apport de hcl pour éliminer la croissance parasitaire Ceased WO2012143257A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011002146.9 2011-04-18
DE102011002146.9A DE102011002146B4 (de) 2011-04-18 2011-04-18 Vorrichtung und Verfahren zum Abscheiden von Halbleiterschichten mit HCI-Zugabe zur Unterdrückung parasitären Wachstums

Publications (1)

Publication Number Publication Date
WO2012143257A1 true WO2012143257A1 (fr) 2012-10-26

Family

ID=46017818

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/056418 Ceased WO2012143257A1 (fr) 2011-04-18 2012-04-10 Dispositif et procédé de dépôt de couches semi-conductrices sous apport de hcl pour éliminer la croissance parasitaire

Country Status (3)

Country Link
DE (1) DE102011002146B4 (fr)
TW (1) TW201250790A (fr)
WO (1) WO2012143257A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013101706B4 (de) 2013-02-21 2026-04-16 Aixtron Se Verfahren zum Reinigen einer Prozesskammer eines Reaktorgehäuses nach dem Abscheiden von Halbleiterschichten
CN104141116B (zh) * 2013-05-08 2017-04-05 理想晶延半导体设备（上海）有限公司 金属有机化学气相沉积装置、气体喷淋组件及其气体分配的控制方法
DE102014104218A1 (de) 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung
CN105200396A (zh) * 2014-06-18 2015-12-30 中微半导体设备(上海)有限公司 一种mocvd设备及其中寄生颗粒的清除方法
DE102015101462A1 (de) 2015-02-02 2016-08-04 Aixtron Se Verfahren und Vorrichtung zum Abscheiden einer III-V-Halbleiterschicht
DE102020123326A1 (de) 2020-09-07 2022-03-10 Aixtron Se CVD-Reaktor mit temperierbarem Gaseinlassbereich
CN115261823B (zh) * 2022-08-26 2023-09-08 北京北方华创微电子装备有限公司 工艺腔室的进气装置、半导体工艺设备及半导体加工工艺
DE102024104401A1 (de) * 2024-02-16 2025-08-21 Aixtron Se Verfahren und Vorrichtung zum Abscheiden n-dotiertem SiC
WO2025228867A1 (fr) * 2024-04-29 2025-11-06 Aixtron Se Réacteur cvd et son procédé d'utilisation et dispositif
DE102024126448A1 (de) 2024-09-13 2026-03-19 Aixtron Se CVD-Reaktor
DE102024126451A1 (de) 2024-09-13 2026-03-19 Aixtron Se CVD-Reaktor
DE102024126446A1 (de) 2024-09-13 2026-03-19 Aixtron Se CVD-Reaktor
DE102024126445A1 (de) 2024-09-13 2026-03-19 Aixtron Se CVD-Reaktor
WO2026057801A2 (fr) 2024-09-13 2026-03-19 Aixtron Se Réacteur cvd
DE102024126450A1 (de) 2024-09-13 2026-03-19 Aixtron Se CVD-Reaktor
DE102024126443A1 (de) 2024-09-13 2026-03-19 Aixtron Se CVD-Reaktor
DE102024126444A1 (de) 2024-09-13 2026-03-19 Aixtron Se CVD-Reaktor

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961399A (en) 1988-03-22 1990-10-09 U.S. Philips Corporation Epitaxial growth reactor provided with a planetary support
US5756374A (en) * 1995-03-27 1998-05-26 Sumitomo Electric Industries, Ltd. Compound semiconductor light emitting device and method of preparing the same
JPH111395A (ja) * 1997-06-09 1999-01-06 Sumitomo Electric Ind Ltd ＧａＮ系化合物半導体のエピタキシャル成長方法
WO2001046498A2 (fr) * 1999-12-22 2001-06-28 Aixtron Ag Reacteur de depot chimique en phase vapeur et chambre de traitement destinee a ce reacteur
DE10163394A1 (de) 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
EP1252363B1 (fr) * 2000-02-04 2003-09-10 Aixtron AG Dispositif et procede pour deposer une ou plusieurs couches sur un substrat
DE10247921A1 (de) 2002-10-10 2004-04-22 Aixtron Ag Hydrid VPE Reaktor
DE102004009130A1 (de) 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
DE102006018515A1 (de) 2006-04-21 2007-10-25 Aixtron Ag CVD-Reaktor mit absenkbarer Prozesskammerdecke
US20070259502A1 (en) * 2006-05-05 2007-11-08 Applied Materials, Inc. Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
US20080050889A1 (en) 2006-08-24 2008-02-28 Applied Materials, Inc. Hotwall reactor and method for reducing particle formation in GaN MOCVD
US20080132040A1 (en) 2004-06-30 2008-06-05 Wang Nang Wang Deposition Technique for Producing High Quality Compound Semiconductor Materials
DE102007009145A1 (de) 2007-02-24 2008-08-28 Aixtron Ag Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632725B2 (en) * 2001-06-29 2003-10-14 Centre National De La Recherche Scientifique (Cnrs) Process for producing an epitaxial layer of gallium nitride by the HVPE method
KR20110079831A (ko) 2008-10-03 2011-07-08 비코 프로세스 이큅먼트, 아이엔씨. 기상 에피택시 시스템

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961399A (en) 1988-03-22 1990-10-09 U.S. Philips Corporation Epitaxial growth reactor provided with a planetary support
US5756374A (en) * 1995-03-27 1998-05-26 Sumitomo Electric Industries, Ltd. Compound semiconductor light emitting device and method of preparing the same
JPH111395A (ja) * 1997-06-09 1999-01-06 Sumitomo Electric Ind Ltd ＧａＮ系化合物半導体のエピタキシャル成長方法
WO2001046498A2 (fr) * 1999-12-22 2001-06-28 Aixtron Ag Reacteur de depot chimique en phase vapeur et chambre de traitement destinee a ce reacteur
EP1252363B1 (fr) * 2000-02-04 2003-09-10 Aixtron AG Dispositif et procede pour deposer une ou plusieurs couches sur un substrat
DE10163394A1 (de) 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
DE10247921A1 (de) 2002-10-10 2004-04-22 Aixtron Ag Hydrid VPE Reaktor
DE102004009130A1 (de) 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
US20080132040A1 (en) 2004-06-30 2008-06-05 Wang Nang Wang Deposition Technique for Producing High Quality Compound Semiconductor Materials
DE102006018515A1 (de) 2006-04-21 2007-10-25 Aixtron Ag CVD-Reaktor mit absenkbarer Prozesskammerdecke
US20070259502A1 (en) * 2006-05-05 2007-11-08 Applied Materials, Inc. Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
US7585769B2 (en) 2006-05-05 2009-09-08 Applied Materials, Inc. Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
US20080050889A1 (en) 2006-08-24 2008-02-28 Applied Materials, Inc. Hotwall reactor and method for reducing particle formation in GaN MOCVD
DE102007009145A1 (de) 2007-02-24 2008-08-28 Aixtron Ag Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE
US20100273320A1 (en) * 2007-02-24 2010-10-28 Kaeppeler Johannes Device and method for selectively depositing crystalline layers using mocvd or hvpe

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Effect of HCI addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures", JOURNAL OF APPLIED PHYSICS, vol. 104, 2008, pages 053517
"High growth rate process in a SiC horizontal CVD reactor using HCI", MICROELECTRONIC ENGINEERING, vol. 83, 2006, pages 48 - 50
"Prevention of In droplets formation by HCI addition during metal organic vapor phase epitaxy of InN", APPLIED PHYSICS LETTERS, vol. 90, 2007, pages 161126

Also Published As

Publication number Publication date
TW201250790A (en) 2012-12-16
DE102011002146A1 (de) 2012-10-18
DE102011002146B4 (de) 2023-03-09

Similar Documents

Publication Publication Date Title
DE102011002146B4 (de) Vorrichtung und Verfahren zum Abscheiden von Halbleiterschichten mit HCI-Zugabe zur Unterdrückung parasitären Wachstums
DE102011002145B4 (de) Vorrichtung und Verfahren zum großflächigen Abscheiden von Halbleiterschichten mit gasgetrennter HCI-Einspeisung
EP2470684B1 (fr) Procédé cvd et réacteur cvd
EP2408952B1 (fr) Réacteur mocvd à couvercle, couplé de manière localement différente, à un appareil dissipant la chaleur
DE69433656T2 (de) Verfahren zum Einleiten reaktiven Gases in eine Substratbearbeitungsvorrichtung
DE69229714T2 (de) Vorrichtung zur chemischen Abscheidung aus der Dampfphase unter Gebrauch von flüssigem Ausgangsmaterial
EP2406411B1 (fr) Réacteur pour mocvd dote d'un organe d'admission de gaz
DE102012102661B4 (de) Verfahren zum Reinigen der Wände einer Prozesskammer eines CVD-Reaktors
US6972050B2 (en) Method for depositing in particular crystalline layers, and device for carrying out the method
DE102011054566A1 (de) Vorrichtung und Verfahren zum Abscheiden mehrkomponentiger Schichten, insbesondere metallorganischer Halbleiterschichten
DE102004050806A1 (de) Verfahren zur Herstellung von (AI,Ga)N Einkristallen
EP3578696B1 (fr) Procédé d'amenée de gaz dans un réacteur destiné à la croissance de structures épitaxiales sur la base de nitrures de métaux du iii groupe
DE112011103869T5 (de) Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind
EP1774056B1 (fr) Procede de depot de couches contenant du silicium et du germanium
EP4581186B1 (fr) Procédé et dispositif de dépôt de sic dopé n
DE102024111991A1 (de) CVD-Reaktor sowie Verfahren zu dessen Verwendung und Einrichtung
WO2025172419A2 (fr) Procédé et dispositif permettant le dépôt de sic dopé n
WO2025228867A1 (fr) Réacteur cvd et son procédé d'utilisation et dispositif
DE102024104401A1 (de) Verfahren und Vorrichtung zum Abscheiden n-dotiertem SiC
WO2026052698A2 (fr) Procédé d'optimisation d'un réacteur cvd ou procédé de dépôt de couches dans un réacteur cvd, et procédé ainsi optimisé ou réacteur cvd
EP4587609A1 (fr) Procédé et dispositif de séparation de sic dopé n
WO2025108923A1 (fr) Procédé et dispositif de séparation de sic dopé n
DE102023136517A1 (de) Verfahren und Vorrichtung zum Abscheiden n-dotiertem SiC
WO2025229194A1 (fr) Procédé et dispositif pour le nettoyage d'un réacteur cvd

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12717240

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12717240

Country of ref document: EP

Kind code of ref document: A1