WO2012144107A1 - Cible de pulvérisation cathodique - Google Patents

Cible de pulvérisation cathodique Download PDF

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Publication number
WO2012144107A1
WO2012144107A1 PCT/JP2011/078544 JP2011078544W WO2012144107A1 WO 2012144107 A1 WO2012144107 A1 WO 2012144107A1 JP 2011078544 W JP2011078544 W JP 2011078544W WO 2012144107 A1 WO2012144107 A1 WO 2012144107A1
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Prior art keywords
target
divided
sputtering
taper
clearance
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PCT/JP2011/078544
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English (en)
Japanese (ja)
Inventor
崇 掛野
鈴木　了
敏也 栗原
中村　祐一郎
和広 関
牧野　修仁
吉一 熊原
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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Priority to KR1020127015591A priority Critical patent/KR20120137347A/ko
Priority to CN201180004937.0A priority patent/CN103348035B/zh
Priority to KR1020147023240A priority patent/KR20140108349A/ko
Priority to JP2012516244A priority patent/JP5438825B2/ja
Publication of WO2012144107A1 publication Critical patent/WO2012144107A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/76—Forming laminates or joined articles comprising at least one member in the form other than a sheet or disc, e.g. two tubes or a tube and a sheet or disc

Definitions

  • the present invention relates to a sputtering target used when a transparent conductive film is produced by a sputtering method, and more particularly, to a ceramic sputtering target made of a plurality of target materials and having divided portions, such as ITO, IZO, and IGZO.
  • Thin films such as ITO, IZO, and IGZO for forming transparent conductive films are widely used as transparent electrodes for display devices such as liquid crystal displays, touch panels, and EL displays.
  • an oxide thin film for forming a transparent conductive film such as ITO, IZO, or IGZO is formed by sputtering.
  • an ITO target will be mainly used as a representative example.
  • ITO Indium Tin Oxide
  • FPD flat panel displays
  • Ceramic targets such as ITO do not have strength (hardness, flexibility, tensile strength) as compared to metals, and therefore chipping (chips) occurs even when they are placed close to each other.
  • the gap between the divided targets is not set to be in contact with each other, but about 0.1 mm to 0.5 mm.
  • the C process and the R process are performed to the edge part of the division
  • a black deposit which is considered to be a lower oxide of indium called nodules, is formed on the surface of the target, particularly on the divided portion. It is known that it precipitates and tends to cause abnormal discharge, and becomes a particle generation source on the surface of the thin film.
  • generation of nodules during sputtering and abnormal discharge can be suppressed by a method in which all of indium and various alloys are embedded in the clearance portion.
  • Patent Document 1 discloses a method of filling a clearance portion with an indium-tin alloy equal to the atomic ratio of indium and tin of the target body.
  • it is necessary to measure the atomic ratio of indium and tin in the target body, and to adjust the composition of the indium-tin alloy to be injected on the basis of the result.
  • the indium-tin alloy is injected into the entire clearance portion, there is a problem that the electrical characteristics of the film formed on the upper part are different from the electrical characteristics of the film formed on other portions. .
  • Patent Document 2 discloses a method of filling in the clearance with indium
  • Patent Document 3 discloses a method of filling an alloy having a higher melting point than the bonding material.
  • indium or the like is injected into the entire clearance portion, the electrical characteristics of the film formed on the upper part thereof are different from the electrical characteristics of the film formed on other portions. was there.
  • Patent Document 4 discloses a method of filling a clearance portion with a material having a different composition, although the metal oxide sintered body and the constituent elements are the same.
  • the amount of oxygen is small, it has almost the same characteristics as a normal alloy, so the electrical characteristics of the film formed on the upper part are different from the electrical characteristics of the film formed on other parts.
  • the amount of oxygen is large, there is almost no difference from the characteristics of ITO, so that there is a problem that it cannot be dissolved and poured into the clearance portion at a low temperature.
  • JP-A-01-230768 Japanese Patent Laid-Open No. 08-144052 JP 2000-144400 A JP 2010-106330 A
  • the present invention can suppress the generation of nodules and abnormal discharge even during continuous sputtering of the divided ceramic target, and the characteristics of the film formed on the substrate facing the clearance part are the characteristics of the film of the other part. Therefore, it is an object of the present invention to provide a ceramic sputtering target, particularly an FPD sputtering target, in which a film having a high uniformity in film characteristics is obtained.
  • the present inventors have conducted intensive research.
  • the ceramic sputtering target is composed of a plurality of divided targets, and the edge of the plurality of divided targets is devised, thereby dividing the divided target.
  • the present invention (1) A sputtering target in which a plurality of divided targets are arranged on a backing plate and bonded to the backing plate, and the distance from the side surface of the divided target to the surface of each of the arranged divided targets there is provided a sputtering target characterized by having a taper of 5 to 40 ° inclined downward from the position of 23.0 mm to 0.10 mm toward the side surface of the divided target.
  • the present invention also provides: (2) The sputtering target as described in (1) above, which has a taper of 10 to 30 ° inclined downward toward the side surface of the divided target.
  • the present invention also provides: (3) The sputtering target according to (1) or (2) above, wherein the maximum depth from the flat surface formed by the taper inclined downward on the side surface of the divided target is 2.0 mm or less, I will provide a.
  • the present invention also provides: (4) The sputtering target according to (1) or (2) above, wherein the maximum depth from the flat surface formed by the taper inclined downward on the side surface of the divided target is 1.0 mm or less, I will provide a.
  • the present invention also provides: (5) The sputtering target according to any one of (1) to (4) above, wherein the clearance between the divided targets is 0.05 to 1.0 mm.
  • the present invention also provides: (6) The sputtering target according to any one of (1) to (4) above, wherein the clearance between the divided targets is 0.1 to 0.5 mm.
  • the present invention also provides: (7) The sputtering target according to any one of (1) to (6) above, wherein the divided target is a ceramic target.
  • the sputtering target of the present invention thus adjusted can suppress the generation of nodules and abnormal discharge even during continuous sputtering of the split target, and the characteristics of the film formed on the substrate facing the clearance portion are It is possible to provide a sputtering target, in particular a sputtering target for FPD, which has no difference from the characteristics of other parts of the film, that is, a film having high uniformity of film characteristics, and improves the yield of film formation and the quality of products. It has a great advantage that it can be increased.
  • the present invention is particularly effective for ceramic targets such as an ITO target, an IZO target, and an IGZO target, but it can be easily understood that the present invention can also be applied to a metal target that easily generates nodules.
  • FIG. 1 It is sectional explanatory drawing of the typical taper (inclined surface) formed in the division
  • the sputtering (split) using a split target with a 11.3 ° taper (inclined surface) showing an example of the present invention shows the clearance (gap) between split targets and the occurrence of nodules formed at the edges.
  • FIG. It is sectional explanatory drawing of C process formed in the edge of the conventional division
  • the sputtering target of the present invention is a sputtering target configured by arranging a plurality of divided targets on a backing plate and bonding to the backing plate, and the distance from the side surface of each of the arranged divided targets is 23.0 mm. From a position of ⁇ 0.10 mm, it has a taper of 5 to 40 ° inclined downward toward the side surface of the target. In this case, “downwardly” means “toward the backing plate”.
  • the target is generally rectangular in plan view, it can be produced by arranging a plurality of rectangular divided targets corresponding to the target.
  • the divided target is not limited to a rectangle, and other shapes, for example, a square, a triangle, a fan shape, or a combination of these can be used as appropriate.
  • the present invention includes these.
  • the backing plate When bonding to the backing plate, it may be formed using a brazing material made of indium or an indium alloy. As other means, a thermal spraying method, a plating method, or the like can be used. After the coating layer is formed, bonding is performed on a backing plate made of, for example, copper or a copper alloy using a brazing material made of indium or an indium alloy.
  • FIG. 1 A representative example of the present invention is shown in FIG.
  • a taper (slope) having an angle of 11.3 ° is formed downward from a position where the distance from the side surface of the divided target is 5 mm toward the side surface of the target.
  • the distance from the target flat surface at the target edge to the deepest part of the taper (slope) is 1 mm.
  • the tapered surface of the sputtering target of the present invention can be arbitrarily selected within the above range, but a more preferable form for suppressing the generation of nodules is 10 to 30 ° inclined downward toward the side surface of the target. It is recommended to have a taper of. This is because, by various experiments, it is useful for preventing nodules that the taper area and depth are wide and shallow.
  • the maximum depth from the flat target surface formed by the taper inclined downward on the side surface of the divided target is 2.0 mm or less. Furthermore, it is more desirable that the maximum depth of the edge on the side surface of the target from the flat surface is 1.0 mm or less, and the minimum depth from the flat surface is 0.1 mm or more.
  • the clearance between the divided targets is in the range of 1.0 mm or less.
  • the clearance between the divided targets is 0.05 to 1.0 mm, and more preferably the clearance between the divided targets is 0.1 to 0.5 mm.
  • care must be taken when chipping is likely to occur due to contact of the divided targets when arranging a plurality of divided targets on the backing plate.
  • the clearance is set to 0 mm. Even when this clearance is set to 0 mm, the split target formed with a taper of 5 to 40 ° inclined downward toward the side surface of the split target can largely suppress the generation of nodules, similarly to the case where the clearance is provided.
  • the present invention includes a case where no clearance is provided (clearance: 0 mm).
  • the divided target can be suitably applied to ceramic targets, particularly ITO, IZO, and IGZO targets.
  • a processing groove is formed in the vicinity of each divided target and is largely recessed, so that nodules (redepots) are easily deposited. From the initial life of the target to 50%, nodules accumulate in the processed grooves.
  • This conceptual diagram (in which nodules are indicated by grains “ ⁇ ”) is shown in the center of FIG.
  • the nodules are re-sputtered, and the target divisions are shallow and recessed but have a nearly flat shape, and nodule accumulation is hardly seen.
  • the invention of the present application has obtained a great hint for this phenomenon. That is, there is a gap (space) in the divided target, and even when C processing or R processing is performed, the surface shape in the case where the target life where the processing groove of this C processing or R processing disappears reaches 50 to 100% is the initial shape.
  • Example 1 As a raw material, a mixed powder in which indium oxide powder and tin oxide powder having a specific surface area of 5 m 2 / g are mixed at a weight ratio of 9: 1 is placed in a press mold and molded at a pressure of 700 kg / cm 2. And the ITO molded object was produced. Next, this ITO molded body is heated from room temperature to 1500 ° C. at a temperature rising rate of 5 ° C./min in an oxygen atmosphere, maintained at 1500 ° C. for 20 hours, and then cooled in the furnace. Was sintered.
  • the surface of the sintered body thus obtained was ground, and the side was further cut into a size of 127 mm ⁇ 254 mm with a diamond cutter. Further, as shown in FIG. 1, a taper (slope) having an angle of 11.3 ° is formed downward from the position where the distance from the side surface of the divided target is 5 mm toward the side surface of the target. In this case, as shown in FIG. 1, the distance from the target flat surface at the target edge to the deepest part of the taper (slope) is 1 mm. Two such processed bodies were produced.
  • an oxygen-free copper backing plate was placed on a hot plate set at 200 ° C., and indium was used as a brazing material, and the thickness thereof was applied to about 0.2 mm.
  • the two ITO sintered bodies were placed facing each other so that a clearance of 0.3 mm was obtained after cooling, and allowed to cool to room temperature.
  • This target was attached to a SYNCHRON magnetron sputtering system (BSC-7011), the input power was 2.3 W / cm 2 with a DC power source, the gas pressure was 0.6 Pa, the sputtering gas was argon (Ar), and the gas flow rate was 300 sccm. The integrated power amount was up to 160 WHr / cm 2 .
  • the occurrence of nodules during sputtering was investigated. Further, the number of occurrences (times) of micro arcs was measured with a micro arc monitor (MAM Genesis) manufactured by Landmark Technology.
  • the criteria for determining the micro arc are a detection voltage of 100 V or more, and an emission energy (sputtering voltage when the arc discharge is occurring ⁇ sputtering current ⁇ generation time) is 20 mJ or less.
  • Table 1 shows the cumulative number of micro arc generations up to 160 WHr / cm 2 in total. As shown in Table 1, the cumulative number of arcing after the target life of 100% from the start of sputtering was 527 times, which was greatly reduced compared to the comparative example described later.
  • Fig. 3 shows the occurrence of nodules in the split part of the split target.
  • the clearance of the dividing portion is 0.3 mm, and the taper of an angle of 11.3 ° downward from the position where the distance from the side surface of the dividing target is 5 mm toward the side surface of the target (
  • the distance from the target flat surface to the deepest part of the taper (slope) is 1 mm, almost no nodules were observed from the start of sputtering to the target life of 100%. This state is indicated as “ ⁇ ” in Table 1.
  • Example 2 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 5 mm, and the side surface of the target.
  • a taper having an angle of 11.3 ° is formed downward, the distance from the target flat surface to the deepest portion of the taper (slope) is 1 mm, and the clearance of the divided portion is 0.1 mm.
  • the cumulative number of arcing after the target life of 100% from the start of sputtering was 462 times, and almost no nodules were observed. Both nodules and arcing were less than in Example 1.
  • Example 3 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 5 mm, and the side surface of the target.
  • a taper having an angle of 11.3 ° is formed downward, the distance from the target flat surface to the deepest portion of the taper (slope) is 1 mm, and the clearance of the divided portion is 0.5 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 576, and nodule generation was hardly observed, but both nodule and arcing were slightly increased compared to Example 1. It was. However, it was greatly reduced compared to the comparative example described later.
  • Example 4 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 11.43 mm.
  • a taper having an angle of 11.3 ° is formed downward, the distance from the target flat surface to the deepest portion of the taper (slope) is 1 mm, and the clearance of the divided portion is 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 433, and almost no nodules were observed. Both nodules and arcing were less than in Example 1.
  • Example 5 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 2.75 mm. This is a case where a taper having an angle of 20 ° is formed downward, the distance from the target flat surface to the deepest portion of the taper (slope) is 1 mm, and the clearance of the divided portion is 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 713, and both nodules and arcing were slightly increased as compared with Example 1. However, it was greatly reduced compared to the comparative example described later. This state is indicated by ⁇ in Table 1, but it is at a level that does not cause any particular problems.
  • Example 6 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 1.73 mm. This is a case where a taper with an angle of 30 ° is formed downward toward the side surface, the distance from the target flat surface to the deepest portion of the taper (slope) is 1 mm, and the clearance of the divided portion is 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 796, and both nodules and arcing were slightly increased as compared with Example 1. However, it was greatly reduced compared to the comparative example described later. This state is indicated by ⁇ in Table 1, but it is at a level that does not cause any particular problems.
  • Example 7 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 5.71 mm. This is a case where a taper with an angle of 5 ° is formed downward, the distance from the target flat surface to the deepest part of the taper (slope) is 0.5 mm, and the clearance of the divided part is 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 301, and almost no nodules were observed. Both nodules and arcing were lower than in Example 1.
  • Example 8 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • Table 1 for the split target, the target from the position where the distance from the side surface of the split target is 2.50 mm. When a taper of 11.3 ° is formed downward toward the side surface, the distance from the target flat surface to the deepest part of the taper (slope) is 0.5 mm, and the clearance of the divided part is 0.3 mm is there.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 345 times, and almost no nodules were observed. Both nodules and arcing were lower than in Example 1.
  • Example 9 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 1.37 mm. This is a case where a taper with an angle of 20 ° is formed downward toward the side surface, the distance from the target flat surface to the deepest portion of the taper (slope) is 0.5 mm, and the clearance of the divided portion is 0.3 mm.
  • the cumulative number of arcing after the target life of 100% from the start of sputtering was 442 times, and almost no nodules were observed. Both nodules and arcing were lower than in Example 1.
  • Example 10 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 0.87 mm. This is a case where a taper with an angle of 30 ° is formed downward, the distance from the target flat surface to the deepest part of the taper (slope) is 0.5 mm, and the clearance between the divided parts is 0.3 mm.
  • the cumulative number of arcing after the target life of 100% from the start of sputtering was 508, and almost no nodules were observed. Both nodules and arcing were lower than in Example 1.
  • Example 11 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • Table 1 for the divided target, the distance from the side surface of the divided target is 3.43 mm. In this case, a taper with an angle of 5 ° is formed downward, the distance from the target flat surface to the deepest part of the taper (slope) is 0.3 mm, and the clearance between the divided parts is 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 194, and nodules were hardly observed. Both nodules and arcing were halved compared to Example 1.
  • Example 12 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • Table 1 for the split target, from the position where the distance from the side of the split target is 1.50 mm, the target A taper with an angle of 11.3 ° is formed in the downward direction toward the side surface, the distance from the target flat surface to the deepest part of the taper (slope) is 0.3 mm, and the clearance of the divided part is 0.3 mm. is there.
  • the cumulative number of arcing after 100% of the target life from the start of sputtering was 250, and almost no nodules were observed. Both nodules and arcing were halved compared to Example 1.
  • Example 13 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 0.82 mm. This is a case where a taper with an angle of 20 ° is formed downward toward the side surface, the distance from the target flat surface to the deepest portion of the taper (slope) is 0.3 mm, and the clearance of the divided portion is 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 331 times, and almost no nodules were observed. Both nodules and arcing were lower than in Example 1.
  • Example 14 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 0.52 mm. This is a case where a taper with an angle of 30 ° is formed downward toward the side surface, the distance from the flat surface of the target to the deepest portion of the taper (slope) is 0.3 mm, and the clearance of the divided portion is 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 428, and no nodules were observed. Both nodules and arcing were lower than in Example 1.
  • Example 1 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the divided target is 1 mm toward the target side surface.
  • a taper with an angle of 45 ° was formed downward.
  • the distance from the target flat surface at the target edge to the deepest part of the taper (slope) is 1.0 mm as shown in FIG.
  • FIG. 5 shows the state of nodule generation when the clearance (gap) of the target dividing portion is 0.3 mm. This state is indicated as x in Table 1.
  • Example 2 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the split target as shown in Table 1, from the position where the distance from the side face of the split target is 0.5 mm, the side face of the target is obtained. A taper with an angle of 45 ° was formed downward.
  • the clearance of the target dividing portion was set to 0.1 mm.
  • the cumulative number of arcing after the target life of 100% from the start of sputtering was 1762, resulting in a very large number of micro arcs.
  • the generation of nodules also increased significantly.
  • Example 3 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the split target as shown in Table 1, from the position where the distance from the side face of the split target is 0.5 mm, the side face of the target is obtained. A taper with an angle of 45 ° was formed downward. In addition, the clearance of the divided part of the target was 0.5 mm.
  • the cumulative number of arcing after the target life of 100% from the start of sputtering was 1908, and the number of occurrences of micro arc was extremely increased. In addition, the generation of nodules also increased significantly.
  • Example 4 The process until the ITO sintered body is manufactured is the same as in Example 1.
  • the distance from the side of the split target is 1 mm toward the target side.
  • a 1 mm radius circle process (R process) was formed (see FIG. 4).
  • the clearance of the target splitting portion was set to 0.3 mm.
  • Table 1 the cumulative number of arcing after the target life of 100% from the start of sputtering was 1826, and the result was that the number of occurrences of micro arcs was extremely large. In addition, the generation of nodules also increased significantly.
  • Example 5 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the split target as shown in Table 1, from the position where the distance from the side face of the split target is 0.5 mm, the side face of the target is obtained. A taper with an angle of 45 ° was formed downward. Further, the clearance of the target splitting portion was set to 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 1522, resulting in a very large number of micro arcs. The generation of nodules also increased.
  • Example 6 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the split target as shown in Table 1, from the position where the distance from the side face of the split target is 0.5 mm, the side face of the target is obtained. A 0.5 mm radius machining (R machining) was formed toward the surface. Further, the clearance of the target splitting portion was set to 0.3 mm.
  • the cumulative number of arcing after the target life of 100% from the start of sputtering was 1559, and the number of occurrences of micro arc was extremely increased. The generation of nodules also increased.
  • Example 7 The steps until the ITO sintered body is manufactured are the same as those in Example 1.
  • Table 1 for the divided target, the distance from the side surface of the divided target is 0.3 mm, and the side surface of the target. A taper with an angle of 45 ° was formed downward. Further, the clearance of the target splitting portion was set to 0.3 mm.
  • the cumulative number of arcs after the target life of 100% from the start of sputtering was 1220, resulting in a very large number of micro arcs. The generation of nodules also increased.
  • Example 8 The steps until the ITO sintered body is manufactured are the same as those in Example 1.
  • Table 1 for the divided target, the distance from the side surface of the divided target is 0.3 mm, and the side surface of the target. A 0.3 mm radius machining (R machining) was formed toward the surface. Further, the clearance of the target splitting portion was set to 0.3 mm.
  • Table 1 the cumulative number of arcing after the target life 100% from the start of sputtering was 1233 times, and the number of occurrences of micro arc was extremely increased. The generation of nodules also increased.
  • Example 15 The process until the ITO sintered body is manufactured is the same as that in Example 1.
  • the distance from the side surface of the split target is 5.0 mm, and downward 11 toward the target side surface. This is a case where a taper with an angle of 3 ° is formed, the distance from the target flat surface to the deepest part of the taper (slope) is 1 mm, and the clearance is 0 mm.
  • Example 1 The arcing was 287 times, nodule generation was small, and the result was better than Example 1. It was found that there was an effect even when the clearance was 0 mm. However, since the size of the target is small, cracks did not occur even when the clearance was 0 mm. However, in the case of a large target, countermeasures against cracking are necessary.
  • a sputtering target is configured by arranging a plurality of divided targets on a backing plate and joining to the backing plate, and a side surface of each of the arranged divided targets. It is extremely important to have a structure having a taper of 5 to 40 ° inclined downward from the position where the distance from the center is 23.0 mm to 0.10 mm toward the side surface of the target. As a result, generation of nodules and abnormal discharge can be suppressed, and the characteristics of the film formed on the substrate facing the clearance part are not different from those of other parts, that is, the film characteristics are uniform. High film can be obtained.
  • the sputtering target of the present invention can suppress the generation of nodules and abnormal discharge even during continuous sputtering of the split target, and the characteristics of the film formed on the substrate facing the clearance part are films of other parts. Therefore, it is possible to provide a sputtering target capable of obtaining a film having a high uniformity of film characteristics, which has the great advantage of improving the yield of film formation and improving the quality of products. Since it is possible to provide a large sputtering target capable of reducing the defect rate due to the generation of particles caused by the divided target portion, it is particularly useful as a sputtering target for FPD.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention porte sur une cible de pulvérisation cathodique conçue par disposition d'une pluralité de cibles fendues sur une plaque support et fixation des cibles fendues à la plaque support et caractérisée en ce qu'elle présente, à la surface de chacune de la pluralité de cibles fendues disposées, une conicité de 5-40° inclinée vers le bas vers une surface latérale de la cible fendue à partir d'une position à une distance de 23,0-0,10 mm de la surface latérale de la cible fendue. La présente invention permet d'obtenir une cible de pulvérisation cathodique, et en particulier une cible de pulvérisation cathodique pour un écran plat, grâce à laquelle la survenue de nodules et d'une décharge électrique anormale peut être supprimée même lorsque des cibles fendues subissent une pulvérisation cathodique en continu et la propriété d'une couche formée sur un substrat en regard d'une partie de dégagement ne présente pas de différence par rapport aux propriétés de couches dans les autres parties, à savoir une couche ayant une propriété de couche hautement uniforme peut être obtenue.
PCT/JP2011/078544 2011-04-18 2011-12-09 Cible de pulvérisation cathodique Ceased WO2012144107A1 (fr)

Priority Applications (4)

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KR1020127015591A KR20120137347A (ko) 2011-04-18 2011-12-09 스퍼터링 타깃
CN201180004937.0A CN103348035B (zh) 2011-04-18 2011-12-09 溅射靶
KR1020147023240A KR20140108349A (ko) 2011-04-18 2011-12-09 스퍼터링 타깃
JP2012516244A JP5438825B2 (ja) 2011-04-18 2011-12-09 スパッタリングターゲット

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JP2011092074 2011-04-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015059268A (ja) * 2013-09-20 2015-03-30 東ソー株式会社 平板形スパッタリングターゲットとその製造方法
WO2018179553A1 (fr) * 2017-03-31 2018-10-04 三井金属鉱業株式会社 Cible de pulvérisation segmentée

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JPS61284573A (ja) * 1985-06-12 1986-12-15 Tokuda Seisakusho Ltd 放電電極
JPH08144052A (ja) * 1994-11-22 1996-06-04 Tosoh Corp Ｉｔｏスパッタリングターゲット
JP2000204468A (ja) * 1999-01-08 2000-07-25 Tosoh Corp 多分割スパッタリングタ―ゲット
JP2005105389A (ja) * 2003-10-01 2005-04-21 Asahi Techno Glass Corp 分割型スパッタリングターゲット

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Publication number Priority date Publication date Assignee Title
JP4959118B2 (ja) * 2004-04-30 2012-06-20 株式会社アルバック スパッタリング装置及びスパッタリング装置用のターゲット
US7316763B2 (en) * 2005-05-24 2008-01-08 Applied Materials, Inc. Multiple target tiles with complementary beveled edges forming a slanted gap therebetween

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Publication number Priority date Publication date Assignee Title
JPS61284573A (ja) * 1985-06-12 1986-12-15 Tokuda Seisakusho Ltd 放電電極
JPH08144052A (ja) * 1994-11-22 1996-06-04 Tosoh Corp Ｉｔｏスパッタリングターゲット
JP2000204468A (ja) * 1999-01-08 2000-07-25 Tosoh Corp 多分割スパッタリングタ―ゲット
JP2005105389A (ja) * 2003-10-01 2005-04-21 Asahi Techno Glass Corp 分割型スパッタリングターゲット

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015059268A (ja) * 2013-09-20 2015-03-30 東ソー株式会社 平板形スパッタリングターゲットとその製造方法
WO2018179553A1 (fr) * 2017-03-31 2018-10-04 三井金属鉱業株式会社 Cible de pulvérisation segmentée
JPWO2018179553A1 (ja) * 2017-03-31 2020-02-13 三井金属鉱業株式会社 分割スパッタリングターゲット

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KR20120137347A (ko) 2012-12-20
JP5438825B2 (ja) 2014-03-12
JPWO2012144107A1 (ja) 2014-07-28
CN103348035A (zh) 2013-10-09
TW201243077A (en) 2012-11-01
KR20140108349A (ko) 2014-09-05
TWI518196B (zh) 2016-01-21

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