WO2012148191A3 - Procédé de formation d'électrode avant de cellule solaire - Google Patents

Procédé de formation d'électrode avant de cellule solaire Download PDF

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Publication number
WO2012148191A3
WO2012148191A3 PCT/KR2012/003242 KR2012003242W WO2012148191A3 WO 2012148191 A3 WO2012148191 A3 WO 2012148191A3 KR 2012003242 W KR2012003242 W KR 2012003242W WO 2012148191 A3 WO2012148191 A3 WO 2012148191A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
solar cell
semiconductor layer
forming
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/003242
Other languages
English (en)
Korean (ko)
Other versions
WO2012148191A2 (fr
Inventor
변도영
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enjet Co Ltd
Original Assignee
Enjet Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enjet Co Ltd filed Critical Enjet Co Ltd
Priority to CN201280016674.XA priority Critical patent/CN103493221A/zh
Publication of WO2012148191A2 publication Critical patent/WO2012148191A2/fr
Publication of WO2012148191A3 publication Critical patent/WO2012148191A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Le procédé de formation d'une électrode avant d'une cellule solaire selon la présente invention se rapporte à un processus consistant à former une électrode avant sur la surface d'une couche semi-conductrice d'une cellule solaire. Le procédé de formation d'une électrode avant sur la surface avant de la couche semi-conductrice d'une cellule solaire comprend les étapes consistant à : imprimer une solution d'électrode sur la surface avant de la couche semi-conductrice pour former l'électrode; et durcir ladite solution d'électrode de sorte que ladite solution d'électrode imprimée sur ladite couche semi-conductrice lors de ladite étape de formation d'électrode configure ladite électrode avant. Ladite solution d'électrode est formée par le mélange d'un agent de liaison destiné à lier ladite couche semi-conductrice et ledit métal, et du métal destiné à former ladite électrode avant. Ladite étape de formation d'électrode envoie une charge électrique à ladite solution d'électrode à l'aide de l'énergie électrique appliquée par une ou plusieurs opérations d'impression à jet d'encre électrohydrodynamique (EHD), et rejette ladite solution d'électrode électriquement chargée depuis une buse à l'aide d'une force électrostatique.
PCT/KR2012/003242 2011-04-26 2012-04-26 Procédé de formation d'électrode avant de cellule solaire Ceased WO2012148191A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201280016674.XA CN103493221A (zh) 2011-04-26 2012-04-26 太阳能电池的前面电极的形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0039105 2011-04-26
KR1020110039105A KR101399419B1 (ko) 2011-04-26 2011-04-26 태양전지의 전면전극 형성방법

Publications (2)

Publication Number Publication Date
WO2012148191A2 WO2012148191A2 (fr) 2012-11-01
WO2012148191A3 true WO2012148191A3 (fr) 2013-01-17

Family

ID=47072918

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/003242 Ceased WO2012148191A2 (fr) 2011-04-26 2012-04-26 Procédé de formation d'électrode avant de cellule solaire

Country Status (3)

Country Link
KR (1) KR101399419B1 (fr)
CN (1) CN103493221A (fr)
WO (1) WO2012148191A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101468690B1 (ko) * 2012-11-19 2014-12-04 엔젯 주식회사 고점도 전도성 나노 잉크 조성물로 이루어진 전극선을 포함하는 투명전극 및 이를 이용한 터치센서, 투명히터 및 전자파 차폐제
KR101631923B1 (ko) * 2015-10-27 2016-06-20 국방과학연구소 전도성 잉크와 대기압 플라즈마 젯을 이용한 다양한 패턴의 유연 플라즈마 전극 제작 방법
CN108242477B (zh) * 2016-12-27 2020-03-24 中国科学院上海高等研究院 层转移单晶硅薄膜用籽晶衬底的微接触湿法刻蚀制备方法
KR20190049973A (ko) 2017-10-31 2019-05-10 희성전자 주식회사 태양전지 셀의 보조전극 형성 방법 및 이러한 방법에 따라 형성된 보조전극을 포함하는 태양전지 셀의 전극
KR20220039448A (ko) * 2020-09-22 2022-03-29 삼성전자주식회사 측면 배선을 구비한 디스플레이 모듈 및 그 제조 방법
CN112951929B (zh) * 2021-01-25 2022-12-30 浙江爱旭太阳能科技有限公司 太阳能电池电极及其制备方法、太阳能电池

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100056114A (ko) * 2008-11-19 2010-05-27 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101005005B1 (ko) * 2010-08-31 2010-12-30 한국기계연구원 솔라셀 웨이퍼 전극 형성방법
KR20110026305A (ko) * 2009-09-07 2011-03-15 엔바로테크 주식회사 태양전지용 전극조성물 및 이를 이용한 태양전지용 전극 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE56852B1 (en) * 1985-10-04 1992-01-01 Boc Group Plc A method for the preparation of a thin semi conductor film
JP3873204B2 (ja) * 2000-09-06 2007-01-24 学校法人金沢工業大学 Ｅｈｄポンピングによる液体ジェット発生方法ならびにｅｈｄポンピングによる液体ジェット発生装置
JP5242703B2 (ja) * 2008-02-01 2013-07-24 ニューサウス・イノベーションズ・ピーティーワイ・リミテッド 選択された材料のパターン化されたエッチング法
US20120196444A1 (en) * 2009-08-11 2012-08-02 New South Innovations Pty Limited Method for the selective delivery of material to a substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100056114A (ko) * 2008-11-19 2010-05-27 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR20110026305A (ko) * 2009-09-07 2011-03-15 엔바로테크 주식회사 태양전지용 전극조성물 및 이를 이용한 태양전지용 전극 제조방법
KR101005005B1 (ko) * 2010-08-31 2010-12-30 한국기계연구원 솔라셀 웨이퍼 전극 형성방법

Also Published As

Publication number Publication date
KR20120121244A (ko) 2012-11-05
KR101399419B1 (ko) 2014-06-30
WO2012148191A2 (fr) 2012-11-01
CN103493221A (zh) 2014-01-01

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