WO2012148848A2 - Procédé et système de contrôle hybride par réticule - Google Patents

Procédé et système de contrôle hybride par réticule Download PDF

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Publication number
WO2012148848A2
WO2012148848A2 PCT/US2012/034665 US2012034665W WO2012148848A2 WO 2012148848 A2 WO2012148848 A2 WO 2012148848A2 US 2012034665 W US2012034665 W US 2012034665W WO 2012148848 A2 WO2012148848 A2 WO 2012148848A2
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WO
WIPO (PCT)
Prior art keywords
inspection
cell
die
reticle
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/034665
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English (en)
Other versions
WO2012148848A3 (fr
Inventor
Carl Hess
John D. Miller
Shan XUE
Patrick LOPRESTI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
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KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Priority to US13/814,535 priority Critical patent/US9208552B2/en
Priority to KR1020137031252A priority patent/KR101834601B1/ko
Priority to JP2014508464A priority patent/JP6041865B2/ja
Priority to TW101115004A priority patent/TWI567485B/zh
Publication of WO2012148848A2 publication Critical patent/WO2012148848A2/fr
Anticipated expiration legal-status Critical
Publication of WO2012148848A3 publication Critical patent/WO2012148848A3/fr
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust

Definitions

  • the present invention is directed generally toward inspection in semiconductor processing, and more particularly a hybrid inspection process.
  • Inspection and metrology technologies are conventionally used in semiconductor wafer facilities for material monitoring, disposition, yield prediction, and yield management. Reticles are inspected at various times to identify changes in a reticle over time. Reticle defects that are changing in time relate to the wafer fabrication requalification where the reticle is inspected to ensure it has not become contaminated during storage or usage.
  • One particularly memory intensive inspection process called die-to-golden inspection, involves imaging the relevant portions of a known, clean substrate. The clean image is known as a "golden image" of the reticle. The golden image is generally taken immediately after the reticle has been cleaned and verified with a die-to-database inspection. The die-to-database inspection is an optical comparison of the reticle (or portions of the reticle) to a computer rendered image of the design database used to create the reticle.
  • golden image is stored, subsequent images of the substrate are compared to the golden image. Any variations are identified as changes or contamination to the reticle.
  • Golden images are on the order of 8 terabytes per reticle.
  • a semiconductor production process may include 1000 reticles.
  • Total storage for golden images for a single semiconductor wafer could exceed 8000 terabytes.
  • 8000 terabytes of golden image data is expensive to store and expensive to utilize.
  • golden images may not be stored where the inspection process takes place, so golden images are also expensive in terms of data bandwidth to transmit the golden images to the inspection site.
  • golden images may include images taken of both reflected light and transmitted light; effectively doubling the amount of data.
  • a reticle may be inspected with reference to the semiconductor design database used to produce the reticle.
  • the semiconductor design database is a perfectly accurate reference that may be used to render an image of the resulting reticle. While a semiconductor design database may not consume as much storage space as a series of golden images, the storage requirement is still substantial.
  • a semiconductor design database may be 1 terabyte or more for a single reticle; therefore a semiconductor wafer requiring 1000 reticles still requires 1000 terabytes of storage and corresponding bandwidth to transfer the databases from their storage location to the inspection site.
  • rendering a semiconductor design database is extremely computationally intensive, often requiring a supercomputer.
  • cell-to-cell inspection is a mode wherein locally repeating structures are compared to each other, and any noted difference is declared to be a defect.
  • Cell-to-cell inspection has been long used in both wafer and reticle inspection. This modality has advantages in that the reference data is very closely spaced to the test region so that the inspection tool does not need to be particularly stable to successfully employ this approach, and no stored reference image is necessary.
  • die-to- die inspection is a mode of inspection wherein identical dies on the same substrate are compared.
  • the present invention is directed to a novel method and apparatus for performing hybrid inspections to reduce the amount of data necessary during a die-to-golden inspection and die-to-database inspection.
  • One embodiment of the present invention is a method for determining which portions of a reticle require a golden image.
  • the method may include identifying appropriate cell-to-cell inspection candidates and die-to-die inspection candidates.
  • the method may include acquiring and storing a golden image for only those portions of a reticle that are not suitable for cell-to-cell and die-die inspection.
  • Another embodiment of the present invention is a method for reducing the amount of data required for a die-to-golden inspection by identifying cell-to-cell inspection candidates and die-to-die inspection candidates in a reticle, and only storing golden images for other portions of the reticle.
  • the method may include applying a data compression algorithm.
  • Another embodiment of the present invention is a die-to-golden inspection apparatus that determines portions of the reticle suitable for cell-to- cell or die-to-die inspection, and performs a die-to-golden inspection on the remaining portions.
  • the apparatus may also utilize "aerial imaging" techniques. Aerial imaging techniques may be performed at multiple focal values.
  • FIG. 1 shows a block diagram of a reticle
  • FIG. 2 shows a block diagram of a system suitable for performing a hybrid inspection of a reticle
  • FIG. 3 shows a flowchart for a method for producing a reduced database for a hybrid die-to-database inspection
  • FIG. 4 shows a flowchart for a method for performing a hybrid die-to- database inspection of a reticle with a reduce database.
  • FIG. 5 shows a flowchart for a method for producing a reduced golden image for a hybrid die-to-golden inspection
  • FIG. 6 shows a flowchart for a method for performing a hybrid die-to-golden inspection of a reticle with a reduced golden image.
  • FIG. 1 a block diagram representation of a reticle 100 is shown.
  • one or more reticles 100 are used to construct electronic components onto a semiconductor wafer through methods known in the art.
  • the features on the reticle 100 that define those electronic components may be organized into groups called cells 102, 104, 106.
  • Some cells 102, 104, 106 may comprise identical components in identical orientations such that a properly aligned comparison of two such cells, for example a first cell 102 and a second cell 104, would reveal a defect or contamination in either the first cell 102 or the second cell 104 of the reticle 100.
  • a reticle 100 may also contain cells 102, 104, 106 that are very similar but not identical.
  • a semiconductor fabrication process may require certain cells, for example a third cell 106, to be slightly different as compared to other cells, for example the first cell 102 and the second cell 104, even though all three cells 102, 104, 106 may contain substantially the same components in substantially the same orientation. Processes such as optical proximity correction may alter the design of certain cells to correct for potential irregularities in the fabrication process.
  • a comparison of the first cell 102 and the third cell 106 may indicate a defect even if both cells 102, 106 were fabricated properly according to the intended design (false defects).
  • a reticle 100 may also be organized into dies 108, 1 10, 114, 1 12; each die 108, 110, 114, 112 substantially similar to one or more other dies 108, 1 10, 1 14, 1 12 on the reticle 100. Where two or more dies 108, 1 10, 114, 1 12 are identical, die-to-die inspection can be performed to identify changes in the reticle used to produce the dies.
  • the apparatus may include a processor 204, memory 206 connected to the processor 204 and a data storage 208 connected to the processor 204.
  • the processor 204 may analyze the semiconductor design database to identify cells intended by design to have identical structure, which are therefore appropriate for cell-to-cell inspection. Additionally, the processor 204 may identify repeated dies in a reticle 100. Repeated dies may be appropriate for die-to-die inspection.
  • the processor 204 may then perform a die-to-database inspection of regions of the reticle 100 where cell-to-cell inspection and die-to-die inspection are not available.
  • the processor 204 may produce a map of regions requiring die-to-database inspection, or the processor 204 may produce a rendered image those regions from the semiconductor design database.
  • the processor 204 may then store the resulting image or map to the data storage 208.
  • the processor 204 may produce and store a variant of the semiconductor design database (reduced database) containing only those portions where cell-to-cell inspection and die-to- die inspection are not available.
  • a processor 204 may only need to retrieve and transfer the reduced map or image, or the reduced database stored in the data storage 208.
  • the processor 204 may perform a cell-to-cell inspection on those regions of the reticle where cell-to-cell inspection is appropriate.
  • the processor may also perform a die-to-die inspection on those regions of the reticle where die-to-die inspection is appropriate.
  • the processor 204 may read the semiconductor design database and render those regions identified in the map as requiring die-to-database inspection. This apparatus may reduce the storage and bandwidth burdens of a die-to-database inspection.
  • the apparatus of FIG. 2 may produce one or more reduced golden images for use in a hybrid inspection process.
  • the apparatus may include a processor 204, memory 206 connected to the processor 204, an imaging device 202 connected to the processor 204 and a data storage 208 connected to the processor 204.
  • the processor 204 may capture a golden image of a reticle 100 and analyze the image to identify cells intended by design to have identical structure, which are therefore appropriate for cell-to-cell inspection. Such analysis may include autocorrelation analysis or any other procedure appropriate for identifying cell-to-cell inspection candidates.
  • the processor 204 may identify repeated dies in a reticle 100. Repeated dies may be appropriate for die-to-die inspection.
  • the processor 204 may then perform a die-to-golden inspection of regions of the reticle 100 where cell-to-cell inspection and die-to-die inspection are not available.
  • the processor 204 may store, on the data storage 208, portions of the golden image (reduced golden image) concerning regions of the reticle 100 where cell-to-cell inspection or die-to-die inspection are not available.
  • a processor 204 may only need to retrieve and transfer the reduced golden image from the data storage 208.
  • a die-to-golden inspection is only necessary for regions of the reticle 100 where other inspection processes are not available. This apparatus may reduce the storage and bandwidth burdens of a die-to-golden inspection.
  • the processor 204 may perform a cell-to-cell inspection on those regions of the reticle 100 where cell-to-cell inspection is appropriate.
  • the processor may also perform a die-to-die inspection on those regions of the reticle 100 where die-to-die inspection is appropriate.
  • defects or contamination in the reticle 100 may be identified as variants during a cell-to-cell inspection, a die-to-die inspection or a die-to- database/die-to-golden inspection.
  • the locations of any defects or contamination may be recorded to track changes in the reticle 100 over time.
  • the potential for false defects may be reduced or eliminated by identifying cell-to-cell inspection candidates through an analysis of the semiconductor design database for the cells.
  • the processor 204 may perform an analysis such as an autocorrelation analysis on a rendered image of the design database to identify cell-to-cell inspection candidates. Peaks in the autocorrelation may indicate repeating patterns of various fidelity and size. With a rendered semiconductor design database, there is no measurement noise at all.
  • the semiconductor design database may include a hierarchy that identifies the locations of identical features. The processor 204 may then produce a region map indicating cells identified as appropriate for cell-to-cell inspection.
  • the processor 204 may also identify reference points from the semiconductor design database 208 and include those reference points in the region map so that the region map may be properly aligned with an actual fabricated reticle 100.
  • the region map may be stored in memory 206 or in the data storage 208. During subsequent inspection processes, the region map may identify regions appropriate for cell-to-cell inspection.
  • Storage space for golden images may be further reduced with data compression.
  • Basic lossless data compression may reduce storage needs by approximately 20-30%, although those skilled in the art may appreciate that actual compression depends on many factors. Data compression may result in some loss in data fidelity (quantization noise), but may have secondary benefits. For example, if a processor 204 removes the 2 least significant bits in an 8-bit data stream, there is an immediate reduction of 25% of the storage needs.
  • Coarse quantization may make data compression over noisy uniform fields more effective. Data fidelity loss is given by quantization noise from data loss. Quantization noise is uniform, uncorrelated noise which adds quadrature to other noise sources. Coarse quantization may be a useful step in data compression if the needed inspection sensitivity can still be achieved.
  • Data storage needs may be further reduced by storing only reflected light images instead of both reflected and transmitted light. Excluding transmitted light images reduces data storage needs by half.
  • images having larger pixel size may be employed to decrease the amount of storage needed by the square of the pixel ratio.
  • an aerial image similar to that produced in a stepper may use a relatively large (125nm) pixel. A large pixel may indicate whether a change will have a printing impact on the wafer.
  • the imaging device 202 should match the illumination and imaging pupil profiles of the stepper. Larger pixel size may make "early detection" more difficult, but may also reduce sensitivity to focus changes. Storage savings may be five-fold.
  • aerial imaging may be performed at multiple focus values leading to a full process-window inspection that can find defects that have a printing impact anywhere in the focus process window of the stepper. Certain defects that primarily have a phase rather than transmissivity impact may have a larger off-focus printing impact as compared to best focus.
  • the apparatus of FIG. 2 may also perform a hybrid die-to-golden inspection.
  • the processor 204 may read the region map.
  • the region map may indicate regions of the reticle 100 suitable for cell-to-cell inspection.
  • the processor 204 may then image the reticle 100 using the imaging device 202.
  • the processor 204 may then orient the region map and the image of the reticle 100 based on corresponding reference points.
  • the processor 204 may then perform cell-to-cell inspection on regions of the reticle 100 identified by the region map as appropriate for cell-to-cell inspection.
  • the processor 204 may record the location of the defect or contamination in the data storage 208.
  • the processor 204 may also perform a die-to-die inspection on the image of the reticle 100 in regions where die-to-die inspection is appropriate.
  • the processor 204 may record the location of the defect or contamination in the data storage 208.
  • the processor 204 may retrieve a reduced golden image from the data storage 208.
  • the reduced golden image may include only those portions of the reticle 100 that are not suitable for cell-to-cell inspection or die-to-die inspection.
  • the processor 204 may then perform a die-to-golden inspection utilizing the reduced golden image. Where the processor 204 identifies defects or contamination based on die-to-golden inspection, the processor 204 may record the location of the defect or contamination in the data storage 208.
  • a processor may analyze 300 cells to identify valid cell-to-cell inspection regions.
  • Analyzing cells may include autocorrelation analysis of an image of a reticle, or other processes known in the art. Analyzing cells may also include reading a semiconductor design database and rendering the semiconductor design database in high fidelity. In this embodiment high fidelity refers the noise level of the resulting image as compared to images generally produced by inspection hardware at the time of inspection.
  • the processor may then perform an autocorrelation analysis to determine regions of the semiconductor design database that are truly repeating and discard cell-to-cell matching regions based on a threshold of the autocorrelation analysis.
  • the processor may output a region map of valid cell-to-cell inspection regions.
  • the processor may directly utilize the identified regions to perform cell-to-cell inspection without producing a region map, or producing the region map as a transitory data structure.
  • Hierarchy indicates patterns that are exactly repeating in the semiconductor design database. The pattern may only be described in detail one time, and then there may be an indication of all the places where the pattern is located. Hierarchy is used as a means of compressing the semiconductor design database. A processor can analyze a semiconductor design database for the hierarchy that is employed to determine those regions that are truly repeating and therefore appropriate for cell-to-cell inspection.
  • a processor may also analyze 302 dies to identify valid die-to-die inspection regions.
  • the processor may then produce 304 a reduced database based on the semiconductor design database with regions appropriate for either cell-to- cell inspection or die-to-die inspection removed.
  • the processor may then store 306 the reduced database in a data storage.
  • a processor in the inspection apparatus may read 400 a reduced database identifying regions in a reticle appropriate for cell-to- cell inspection and die-to-die inspection.
  • the processor may then perform 402 a cell-to-cell inspection of regions where the reduced database indicates cell-to-cell inspection is appropriate.
  • the processor may then perform 404 a die-to-die inspection of regions where the reduced database indicates die-to-die inspection is appropriate.
  • the processor may then perform 406 a die-to-database inspection utilizing the reduced database.
  • the processor may record 408 any areas identified as having changed over time based on either the cell-to-cell inspection, the die-to- die inspection or the die-to-database inspection.
  • a processor may analyze 500 cells to identify valid cell-to-cell inspection regions.
  • Analyzing cells may include autocorrelation analysis of an image of a reticle, or other processes known in the art. Analyzing cells may also include reading a semiconductor design database and rendering the semiconductor design database in high fidelity. In this embodiment high fidelity refers the noise level of the resulting image as compared to images generally produced by inspection hardware at the time of inspection.
  • Hierarchy indicates patterns that are exactly repeating in the semiconductor design database. The pattern may only be described in detail one time, and then there may be an indication of all the places where the pattern is located. Hierarchy is used as a means of compressing the semiconductor design database. A processor can analyze a semiconductor design database for the hierarchy that is employed to determine those regions that are truly repeating and therefore appropriate for cell-to-cell inspection.
  • a processor may also analyze 502 dies to identify valid die-to-die inspection regions.
  • the processor may then acquire a golden image 504 of a reticle and produce 506 a reduced golden image based on the golden image with regions appropriate for either cell-to-cell inspection or die-to-die inspection removed.
  • the golden image may be used; in that case acquiring the golden image may precede the analysis.
  • the golden image and reduced golden image may comprise a reflected light image or a transmitted light image.
  • the processor may then compress 508 the reduced golden image.
  • the processor may then store 510 the reduced golden image in a data storage.
  • a processor in the inspection apparatus may retrieve 600 a reduced golden image of regions in a reticle inappropriate for cell-to-cell inspection and die-to-die inspection, and indicating where such inspection is appropriate.
  • the processor may then perform 602 a cell-to-cell inspection of regions where the reduced golden image indicates cell-to-cell inspection is appropriate.
  • the processor may then perform 604 a die-to-die inspection of regions where the reduced golden image indicates die-to-die inspection is appropriate.
  • the processor may then perform 606 a die-to-golden inspection utilizing the reduced golden image.
  • the processor may record 608 any areas identified as having changed over time based on either the cell-to-cell inspection, the die-to-die inspection or the die-to-golden inspection.
  • a smaller quantity of stored data may also reduce the bandwidth usage associated with pushing the data to an imaging computer connected to an inspection station. Reduced bandwidth usage may help the inspection proceed more quickly and reduce the cost to construct such an inspection station.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

L'invention concerne un appareil de contrôle de semiconducteurs qui réalise un processus de contrôle hybride comprenant un contrôle de cellule à cellule, un contrôle de pastille à pastille et un contrôle de pastilles par rapport à un modèle doré ou par rapport à une base de données. L'appareil crée une image dorée d'un réticule complémentaire à des parties du réticule qui peuvent être contrôlées par un contrôle de cellule à cellule ou de pastille à pastille. En variante, l'appareil crée une base de données réduite complémentaire à des parties du réticule qui peuvent être contrôlées par un contrôle de cellule à cellule ou de pastille à pastille.
PCT/US2012/034665 2011-04-26 2012-04-23 Procédé et système de contrôle hybride par réticule Ceased WO2012148848A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/814,535 US9208552B2 (en) 2011-04-26 2012-04-23 Method and system for hybrid reticle inspection
KR1020137031252A KR101834601B1 (ko) 2011-04-26 2012-04-23 하이브리드 레티클 검사 방법 및 시스템
JP2014508464A JP6041865B2 (ja) 2011-04-26 2012-04-23 ハイブリッドレチクル検査のための方法及びシステム
TW101115004A TWI567485B (zh) 2011-04-26 2012-04-26 用於混合式十字線檢視之方法及系統

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161478998P 2011-04-26 2011-04-26
US61/478,998 2011-04-26
US201261611236P 2012-03-15 2012-03-15
US61/611,236 2012-03-15

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WO2012148848A2 true WO2012148848A2 (fr) 2012-11-01
WO2012148848A3 WO2012148848A3 (fr) 2014-05-01

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KR (1) KR101834601B1 (fr)
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015027198A1 (fr) * 2013-08-23 2015-02-26 Kla-Tencor Corporation Inspection de réticule bloc à bloc
US9390884B2 (en) 2014-05-09 2016-07-12 Globalfoundries Inc. Method of inspecting a semiconductor substrate
EP3862814A1 (fr) * 2020-02-10 2021-08-11 ASML Netherlands B.V. Procédé d'inspection de processus en plusieurs étapes
US20220301133A1 (en) * 2021-03-16 2022-09-22 Kla Corporation Segmentation of design care areas with a rendered design image

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102599657B1 (ko) 2016-08-17 2023-11-08 삼성전자주식회사 반도체 웨이퍼 검사 방법 및 시스템, 및 이를 이용한 반도체 소자의 제조 방법
US10451563B2 (en) * 2017-02-21 2019-10-22 Kla-Tencor Corporation Inspection of photomasks by comparing two photomasks
US11263741B2 (en) * 2020-01-24 2022-03-01 Applied Materials Israel Ltd. System and methods of generating comparable regions of a lithographic mask
JP7465138B2 (ja) * 2020-04-13 2024-04-10 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10141932A (ja) * 1996-11-07 1998-05-29 Fujitsu Ltd パターン検査方法と装置
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
JP2004212221A (ja) * 2002-12-27 2004-07-29 Toshiba Corp パターン検査方法及びパターン検査装置
JP2005134347A (ja) * 2003-10-31 2005-05-26 Nec Corp レチクル検査装置及びレチクル検査方法
US7303842B2 (en) * 2005-04-13 2007-12-04 Kla-Tencor Technologies Corporation Systems and methods for modifying a reticle's optical properties
JP2008082740A (ja) * 2006-09-26 2008-04-10 Toshiba Corp 半導体装置のパターン欠陥検査方法
US8611639B2 (en) 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
US8401272B2 (en) * 2007-08-02 2013-03-19 Asti Holdings Limited Patterned wafer defect inspection system and method
US8126255B2 (en) 2007-09-20 2012-02-28 Kla-Tencor Corp. Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions
JP2010107412A (ja) * 2008-10-31 2010-05-13 Toshiba Corp 欠陥観察装置、欠陥観察方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015027198A1 (fr) * 2013-08-23 2015-02-26 Kla-Tencor Corporation Inspection de réticule bloc à bloc
KR20160045859A (ko) * 2013-08-23 2016-04-27 케이엘에이-텐코 코포레이션 블록-투-블록 레티클 검사
JP2016530525A (ja) * 2013-08-23 2016-09-29 ケーエルエー−テンカー コーポレイション ブロック間レチクル検査
US9766185B2 (en) 2013-08-23 2017-09-19 Kla-Tencor Corporation Block-to-block reticle inspection
TWI641827B (zh) * 2013-08-23 2018-11-21 美商克萊譚克公司 用於區塊對區塊之光罩檢查之系統及方法
US10539512B2 (en) 2013-08-23 2020-01-21 Kla-Tencor Corporation Block-to-block reticle inspection
KR20200028040A (ko) * 2013-08-23 2020-03-13 케이엘에이 코포레이션 블록-투-블록 레티클 검사
US9390884B2 (en) 2014-05-09 2016-07-12 Globalfoundries Inc. Method of inspecting a semiconductor substrate
EP3862814A1 (fr) * 2020-02-10 2021-08-11 ASML Netherlands B.V. Procédé d'inspection de processus en plusieurs étapes
WO2021160523A1 (fr) * 2020-02-10 2021-08-19 Asml Netherlands B.V. Procédé d'inspection de processus multi-étapes
CN115087930A (zh) * 2020-02-10 2022-09-20 Asml荷兰有限公司 多步骤过程检查方法
CN115087930B (zh) * 2020-02-10 2025-09-12 Asml荷兰有限公司 多步骤过程检查方法
IL295062B1 (en) * 2020-02-10 2026-02-01 Asml Netherlands Bv Multi-step process testing method
US20220301133A1 (en) * 2021-03-16 2022-09-22 Kla Corporation Segmentation of design care areas with a rendered design image
CN117015850A (zh) * 2021-03-16 2023-11-07 科磊股份有限公司 以经呈现设计图像进行的设计注意区域的分段
CN117015850B (zh) * 2021-03-16 2024-04-05 科磊股份有限公司 以经呈现设计图像进行的设计注意区域的分段
US12165306B2 (en) * 2021-03-16 2024-12-10 Kla Corporation Segmentation of design care areas with a rendered design image

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WO2012148848A3 (fr) 2014-05-01
JP2014519598A (ja) 2014-08-14
KR20140029464A (ko) 2014-03-10
JP6041865B2 (ja) 2016-12-14

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