WO2012177019A3 - Procédé de formation d'un substrat et substrat ainsi formé - Google Patents

Procédé de formation d'un substrat et substrat ainsi formé Download PDF

Info

Publication number
WO2012177019A3
WO2012177019A3 PCT/KR2012/004732 KR2012004732W WO2012177019A3 WO 2012177019 A3 WO2012177019 A3 WO 2012177019A3 KR 2012004732 W KR2012004732 W KR 2012004732W WO 2012177019 A3 WO2012177019 A3 WO 2012177019A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
forming
deposit layer
aluminum
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/004732
Other languages
English (en)
Korean (ko)
Other versions
WO2012177019A2 (fr
Inventor
김기철
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SETS CO Ltd
Original Assignee
SETS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SETS CO Ltd filed Critical SETS CO Ltd
Publication of WO2012177019A2 publication Critical patent/WO2012177019A2/fr
Publication of WO2012177019A3 publication Critical patent/WO2012177019A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un procédé de formation d'un substrat. Le procédé de formation de substrat comprend les étapes suivantes : formation d'une couche de dépôt constituée de différents matériaux sur un substrat monocristallin ; dépôt d'un film d'aluminium (Al) sur la couche de dépôt ; oxydation et monocristallisation du film d'aluminium ; désintégration de la couche de dépôt afin de séparer l'oxyde d'aluminium (Al2O3) monocristallisé de la couche de dépôt ; et attachement de l'oxyde d'aluminium (Al2O3) moncristallin séparé à un substrat de support.
PCT/KR2012/004732 2011-06-21 2012-06-15 Procédé de formation d'un substrat et substrat ainsi formé Ceased WO2012177019A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110060214A KR101190677B1 (ko) 2011-06-21 2011-06-21 기판 형성 방법 및 그 기판
KR10-2011-0060214 2011-06-21

Publications (2)

Publication Number Publication Date
WO2012177019A2 WO2012177019A2 (fr) 2012-12-27
WO2012177019A3 true WO2012177019A3 (fr) 2013-04-04

Family

ID=47287932

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/004732 Ceased WO2012177019A2 (fr) 2011-06-21 2012-06-15 Procédé de formation d'un substrat et substrat ainsi formé

Country Status (2)

Country Link
KR (1) KR101190677B1 (fr)
WO (1) WO2012177019A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101301197B1 (ko) * 2012-11-06 2013-08-28 (주)이피글로벌 Led 칩 기판용 사파이어 단결정 박막의 제조방법 및 이로부터 제조된 led 칩
CN118727136B (zh) * 2024-08-14 2025-03-25 中国科学院半导体研究所 氮化镓单晶片及其制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030061940A (ko) * 2002-01-14 2003-07-23 엘지이노텍 주식회사 질화물 반도체 제조방법
JP2004051446A (ja) * 2002-07-22 2004-02-19 Asahi Kasei Corp 酸化物単結晶薄膜形成方法および半導体薄膜形成方法
JP2005132699A (ja) * 2003-10-31 2005-05-26 Ngk Insulators Ltd 窒化アルミニウム単結晶の製造方法
JP2011077102A (ja) * 2009-09-29 2011-04-14 Toyoda Gosei Co Ltd ウエハ、ｉｉｉ族窒化物系化合物半導体素子、及びそれらの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030061940A (ko) * 2002-01-14 2003-07-23 엘지이노텍 주식회사 질화물 반도체 제조방법
JP2004051446A (ja) * 2002-07-22 2004-02-19 Asahi Kasei Corp 酸化物単結晶薄膜形成方法および半導体薄膜形成方法
JP2005132699A (ja) * 2003-10-31 2005-05-26 Ngk Insulators Ltd 窒化アルミニウム単結晶の製造方法
JP2011077102A (ja) * 2009-09-29 2011-04-14 Toyoda Gosei Co Ltd ウエハ、ｉｉｉ族窒化物系化合物半導体素子、及びそれらの製造方法

Also Published As

Publication number Publication date
KR101190677B1 (ko) 2012-10-12
WO2012177019A2 (fr) 2012-12-27

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