WO2012177019A2 - Procédé de formation d'un substrat et substrat ainsi formé - Google Patents

Procédé de formation d'un substrat et substrat ainsi formé Download PDF

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WO2012177019A2
WO2012177019A2 PCT/KR2012/004732 KR2012004732W WO2012177019A2 WO 2012177019 A2 WO2012177019 A2 WO 2012177019A2 KR 2012004732 W KR2012004732 W KR 2012004732W WO 2012177019 A2 WO2012177019 A2 WO 2012177019A2
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film
substrate
aluminum
single crystal
layer
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WO2012177019A3 (fr
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김기철
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SETS CO Ltd
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SETS CO Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials

Definitions

  • the present invention relates to a method of forming a substrate comprising a sapphire single crystal Al 2 O 3 film and a substrate thereof.
  • Sapphire single crystal is a basic wafer used to manufacture light emitting diodes (LEDs) such as blue, green, white, and ultraviolet rays, and is used as a substrate for deposition of nitrides or compound semiconductors.
  • the sapphire substrate is made into an epi wafer after the deposition and growth process, and then used as a chip.
  • the single crystal substrate is used as a base material for manufacturing LEDs or integrated circuits, but since the single crystal substrate itself is used as a material, it is difficult to recycle, and thus the manufacturing cost of the LED or chip may be increased.
  • the present invention has been made in view of the above, and an object thereof is to reduce manufacturing costs by enabling reuse of a single crystal substrate as a material.
  • Another object of the present invention is to provide a method for forming a substrate suitable for manufacturing a large diameter wafer.
  • the substrate forming method related to the present invention forming a deposition layer of a different material on a single crystal substrate; Depositing an aluminum (Al) film on the deposition layer; Oxidizing and monocrystallizing the aluminum film; Decomposing the deposition layer to separate the single crystallized aluminum oxide layer (Al 2 O 3 ); And attaching the separated single crystal aluminum oxide film (Al 2 O 3 ) to a support substrate.
  • the deposition layer may be a polycrystalline gallium nitride (GaN) or gallium nitride epitaxial film.
  • the deposition thickness of the aluminum film may be 500 ⁇ 2000 ⁇ .
  • oxidizing and monocrystallizing the aluminum film Al may include: heat treating the aluminum film in an inert atmosphere; Heat-treating the aluminum film in an oxygen atmosphere to convert the aluminum oxide film; And converting the aluminum oxide film into a single crystal by heat treating the aluminum oxide film.
  • the heat treatment of the aluminum film in the inert atmosphere may be to maintain heating for a predetermined time at a temperature of 250 ⁇ 450 °C.
  • the step of converting the aluminum film into an aluminum oxide film by heating the aluminum film in an oxygen atmosphere may be to maintain heating at a temperature of 400 to 500 ° C. for a predetermined time.
  • the step of converting the aluminum oxide film into a single crystal by heat-treating the aluminum oxide film may be to maintain heating for a predetermined time at a temperature of 900 ⁇ 1600 °C.
  • the step of converting the aluminum oxide film into a single crystal by heat treatment may be to repeatedly perform the number of heat treatments according to the thickness of the aluminum oxide film.
  • decomposing the deposition layer and separating the aluminum oxide film (Al 2 O 3 ) that has been monocrystalized may include decomposing the deposition layer by laser lift-off. It may be.
  • the support substrate may include any one of metal, metal oxide, quartz, monocrystalline silicon, or polycrystalline silicon.
  • Substrate formation method related to the present invention forming a deposition layer of a different material on a single crystal substrate; Depositing an aluminum (Al) film on the deposition layer; Oxidizing and monocrystallizing the aluminum film; Attaching a support substrate to the single crystallized aluminum oxide film (Al 2 O 3 ); And separating the single crystal substrate from the deposition layer.
  • Al aluminum
  • Al 2 O 3 single crystallized aluminum oxide film
  • Substrate formation method related to the present invention comprises the steps of forming a deposition layer of a different material on the sapphire or silicon single crystal substrate; Depositing an aluminum (Al) film on the deposition layer; Forming a pattern such that the aluminum film is formed into a plurality of polygonal cell shapes; Heat treating the aluminum film to oxidize and single crystal; Separating the single crystallized aluminum oxide film (A1 2 0 3 ) from the sapphire or single crystal substrate in the form of a cell by the pattern; And attaching the separated single crystal aluminum oxide (Al 2 O 3 ) substrate cells to a support substrate.
  • Substrate formation method related to the present invention comprises the steps of forming an epi layer of a different material on a silicon (Si) single crystal substrate; Forming an oxide layer on the epi layer; Depositing an aluminum (Al) film on the oxide layer; Oxidizing and monocrystallizing the aluminum film (Al); Attaching a support substrate to the oxidized and monocrystalline aluminum oxide film (Al 2 O 3 ); And separating the silicon single crystal substrate from the deposition layer.
  • the epi layer may include at least one of silicon germanium (SiGe), silicon carbide (SiC), and germanium (Ge).
  • the oxidation and unite the purified aluminum oxide film (Al 2 O 3) supported on a stage before attaching the substrate, oxide and unite the purified said aluminum oxide film (Al 2 O 3) on and the Partially etching the oxide layer by photoresist (PR); And removing the epi layer by wet chemical.
  • the oxide layer may be formed to have a thickness of 10 to 50 kPa.
  • the method may further include removing the aluminum film and the oxide layer by a photoresist (PR).
  • PR photoresist
  • the support substrate may include any one of metal oxide, polycrystalline aluminum oxide, silicon carbide, and polycrystalline silicon.
  • a substrate forming method comprises the steps of pretreatment by wet chemical on a silicon (Si) single crystal substrate, and forming an epi layer of a material different from the silicon single crystal; Forming an oxide layer on the epi layer; Depositing an aluminum oxide (Al 2 O 3 ) film on the oxide layer; Monocrystallizing the aluminum oxide film; Attaching a support substrate to the monocrystalline aluminum oxide film; And separating the silicon single crystal substrate from the deposition layer.
  • Si silicon
  • Al 2 O 3 aluminum oxide
  • depositing an aluminum oxide (Al 2 O 3 ) film on the oxide layer may further include depositing polycrystalline aluminum oxide and performing a heat treatment at a temperature of 400 to 1000 ° C.
  • the epi layer may be formed in a multilayer form.
  • a substrate forming method comprises the steps of: depositing a gallium nitride (GaN) layer on a sapphire single crystal substrate; Partially etching the gallium nitride layer to expose the sapphire substrate; Forming an oxide in the gallium nitride layer; Depositing an aluminum (Al) film on the oxide layer and an exposed portion of the sapphire substrate; Oxidizing and monocrystallizing the aluminum film; Attaching a support substrate to the monocrystalline aluminum oxide film; And separating the sapphire single crystal substrate by decomposing the gallium nitride by laser lift-off.
  • GaN gallium nitride
  • Substrate formation method related to the present invention forming a deposition layer of a different material on a single crystal substrate; Depositing an aluminum (Al) film on the deposition layer; Oxidizing and monocrystallizing the aluminum film (Al); Decomposing the deposition layer to separate the monocrystalline aluminum oxide film from the single crystal substrate; And attaching a support substrate to the monocrystallized aluminum oxide film.
  • Al aluminum
  • Substrate formation method related to the present invention comprises the steps of: forming an oxide film on a silicon (Si) single crystal substrate to a thickness of 2 ⁇ 30 ⁇ ; Forming an epitaxial layer of aluminum oxide (Al 2 O 3 ) on the oxide film; Depositing an aluminum (Al) film on the epi layer; It may have a form including the step of oxidizing and monocrystallizing the aluminum film (Al).
  • the epi layer may have a thickness of 2 to 100 nm
  • the aluminum (Al) layer may have a thickness of 50 to 2000 nm.
  • the substrate related to the present invention can be manufactured by the substrate forming method of any one of the above methods.
  • the substrate forming method of the present invention since the sapphire or the silicon single crystal lower substrate is replaced by the supporting substrate, the single crystal substrate can be used continuously, thereby reducing the manufacturing cost.
  • FIG. 1 is a flowchart illustrating a method of forming a substrate according to the present invention using a sapphire single crystal substrate.
  • FIG. 2 is a process flowchart showing an example of a method of forming a substrate using a sapphire single crystal substrate
  • FIG. 3 is a process flowchart showing an example of a method of forming a substrate using a silicon single crystal substrate
  • FIG. 4 is a process flowchart showing an example of a method of forming a substrate using a silicon single crystal substrate
  • FIG. 5 is a process flowchart showing another example of a method of forming a substrate using a sapphire single crystal substrate
  • 6 and 7 illustrate exemplary plan views of a patterned aluminum film.
  • FIG. 8 is a plan view conceptually illustrating bonding a patterned single crystallized upper substrate cell to a large diameter wafer
  • FIG. 9 is a process flowchart showing an example of a method of forming a substrate using a silicon single crystal substrate
  • FIG. 10 is a process flowchart showing another example of a method of forming a substrate using a silicon single crystal substrate
  • FIG. 1 is a flowchart illustrating a method of forming a substrate according to the present invention using a sapphire single crystal substrate.
  • Substrate formation method related to the present invention is to form a sapphire single crystal substrate or silicon single crystal substrate to continue to reuse the sapphire single crystal substrate or silicon single crystal substrate by forming a sapphire single crystal film on the support substrate instead of the underlying sapphire single crystal substrate or silicon single crystal substrate to obtain a large diameter substrate do.
  • forming a deposition layer of a different material on a single crystal substrate (S20) depositing an aluminum (Al) film on the deposition layer (S30), oxidizing and monocrystalline the aluminum film (S40), monocrystalline oxidation Attaching the support substrate to the aluminum film Al 2 O 3 (S50), and separating the single crystal substrate from the deposition layer (S60).
  • a sapphire (Al 2 O 3 ) single crystal substrate or a silicon (Si) single crystal substrate is provided as a base single crystal substrate (S10; see also FIG. 2 (a)).
  • the single crystal substrate is referred to as the "lower substrate” to distinguish it from the single crystal substrate obtained through the heat treatment described later, and the single crystal substrate obtained through the heat treatment is referred to as the "upper substrate”.
  • FIG. 2 is a process flowchart showing an example of a method of forming a substrate using a sapphire single crystal substrate.
  • a heterogeneous material is deposited on a lower substrate such as polycrystalline gallium nitride or single crystal gallium nitride. do.
  • the nitride based deposition layer 110 induces single crystallization of the subsequently deposited aluminum oxide film and is used as a layer for separation from the lower substrate.
  • an aluminum (Al) film 120 is deposited (S30).
  • the thickness of the aluminum film 120 is about 500 to 2000 mm 3, and is deposited by a method such as sputtering, E-beam, chemical vapor deposition (CVD), or the like.
  • the aluminum film 120 is heat treated to oxidize and converted into a sapphire single crystal film 121 (S40).
  • a step (I) of heat treatment of the aluminum film in an inert atmosphere a step of converting the aluminum film into an aluminum oxide film by heat treatment in an oxygen atmosphere (II), and a heat treatment of the aluminum oxide film to convert the aluminum oxide film into a single crystal It may be to go through step (III).
  • the oxygen atmosphere is avoided at a temperature of 250 to 450 ° C. after the deposition of the aluminum film 120, and is performed in an inert atmosphere such as argon (Ar). While maintaining the heating state for about 10 to 14 hours, grains of aluminum form and grow in size.
  • step (II) of converting to an aluminum oxide film heat treatment is performed by heating and holding for about 12 to 48 hours in an oxygen atmosphere of 400 to 500 ° C.
  • the aluminum film is converted to a polycrystalline aluminum oxide film (alumina, Al 2 O 3 ).
  • the aluminum oxide film is heated and maintained at a temperature of 900 to 1600 ° C for 12 to 24 hours.
  • the polycrystalline aluminum oxide film is converted into a single crystal component such as gallium nitride deposited on the bottom by epitaxy.
  • the heat treatment time depends on the thickness of the aluminum oxide film. If the thickness is 1000 ms, the heat treatment is appropriate for 12 to 24 hours, and when the thickness is about 2000 ms, a minimum of 48 hours is required.
  • the number of times of heat treatment can be repeatedly performed. For example, in the case of 6000 mW, the above process may be repeated by 1500 mW.
  • the final film 121 subjected to the heat treatment as described above may form a single crystal similar to the physical properties of the gallium nitride underneath, thereby obtaining high flatness.
  • the support substrate 130 may be bonded to the single crystallized aluminum oxide film 121.
  • the support substrate 130 may be variously selected from a metal, a metal oxide, quartz, monocrystalline silicon, polycrystalline silicon, or the like, or may be two or more composite films.
  • one or more buffer layers may be deposited and bonded between the support substrate and the single crystallized aluminum oxide film (Al 2 O 3 ).
  • the deposition of the deposition layer 110 at the interface between the deposition layer 110 and the single crystal substrate 100 induces the decomposition of the deposition layer 110 and the deposition layer 110 and It is to be separated from the single crystallized aluminum oxide film 121.
  • a method of separation a method such as laser lift-off may be used.
  • the separated single crystal aluminum oxide film 121 and the deposition layer 110 may be formed of a supporting substrate / Al 2 O 3 / GaN, but to remove GaN, a wet chemical such as potassium hydroxide (KOH) may be removed, or plasma may be removed. It may be removed by etching with a plasma etch, or in some cases may be used as it is.
  • KOH potassium hydroxide
  • Single crystal Al 2 O 3 from which gallium nitride (GaN) is removed may be used in various ways depending on the application.
  • a method of partially etching the single crystal aluminum oxide film using a photoresist on the formed single crystal aluminum oxide film and injecting a wet chemical into the gap to melt the underlying deposition layer (GaN) is used.
  • the wet chemical may be potassium hydroxide (KOH).
  • KOH potassium hydroxide
  • FIG. 3 is a process flowchart showing an example of a method of forming a substrate using a silicon single crystal substrate
  • FIG. 4 is a process flowchart showing an example of a method of forming a substrate using a silicon single crystal substrate.
  • the single crystallized aluminum oxide film 121 is first placed on the silicon substrate 100'. It is separated from (S50 ').
  • the lower substrate is an opaque silicon substrate, it is difficult to separate by the laser lift-off method or the like, and therefore, the lower substrate is separated from the silicon substrate 100 'before bonding.
  • a method of partially etching the single crystal aluminum oxide film using a photoresist and injecting a wet chemical into the gap may melt a lower deposition layer.
  • the separated aluminum oxide film (upper substrate) is bonded to another support substrate 130 (S60 ') and the silicon single crystal substrate 100' is reused as a substrate.
  • FIG. 5 is a process flowchart showing another example of a method of forming a substrate using a sapphire single crystal substrate.
  • a GaN deposition layer 210 and an aluminum film 220 are deposited on the prepared sapphire substrate 200.
  • the aluminum film 220 is partially etched by performing a photo process. In this case, the etching depth may be removed by etching the aluminum film 220 or the aluminum film 220 and the lower film quality.
  • the aluminum film 221 may have a pattern as shown in FIG. 6 or 7. That is, in FIGS. 6 and 7, the aluminum film is patterned to have a plurality of substrate cells 221A and 221B that can be separated from each other, and the spaces 223A and 223B formed by etching between the substrate cells 221A and 221B are formed. Included.
  • the aluminum film 220 After the deposition of the aluminum film 220 to avoid the oxygen atmosphere at a temperature of 250 ⁇ 450 °C and heat treatment in an inert atmosphere such as argon (Ar) for about 12 hours to form crystal grains and to increase the grain size. Then, the aluminum film 220 is converted into a polycrystalline aluminum oxide film by heat treatment for about 12 to 48 hours or 24 hours in an oxygen atmosphere of 400 to 500 ° C. After that, the heat treatment is performed for 12 hours or more at a temperature of 1000 ° C. or higher to convert the polycrystalline aluminum oxide film into a single crystal component such as the GaN deposition layer 210 in which the epitaxy is deposited. The heat treatment time depends on the thickness of the polycrystalline aluminum oxide film.
  • an inert atmosphere such as argon (Ar)
  • a thickness of about 1000 mm 3 is suitable for 12 to 24 hours, and a time of at least 48 hours is required at about 2000 m 3.
  • the thickness is thick, for example, if the 6000 ⁇ can be divided by 1500 ⁇ by repeating the above process.
  • a single crystal similar to the physical properties of the lower GaN deposition layer 210 may be formed and a planarized film may be obtained (see (d)).
  • the support substrate 230 is bonded if necessary on the single crystal aluminum oxide film 221 thus formed.
  • the support substrate 230 may be variously selected from a metal component, quartz, single crystal silicon, metal oxide, polycrystalline silicon, or the like, or may be two or more composite films.
  • the GaN deposition layer 210 is decomposed at the interface between the GaN deposition layer 210 and the sapphire single crystal substrate 200 so that the single crystal aluminum oxide film 221 is separated from the lower substrate 200.
  • the laser lift off method may be used as the method of separation.
  • a wet chemical known as KOH or the like may be used, or etching may be performed by plasma etching, in a gas atmosphere such as boron chloride (BCl 3 ) or chlorine (Cl 2 ) at a high temperature of 350 ° C. or higher.
  • a gas atmosphere such as boron chloride (BCl 3 ) or chlorine (Cl 2 ) at a high temperature of 350 ° C. or higher.
  • the Al 2 O 3 single crystal substrate thus obtained is used as a substrate to be applied to devices such as LEDs and laser devices.
  • GaCVD and required layers may be deposited by MOCVD epitaxy and applied to a large diameter substrate in this way, wherein the single monocrystalline aluminum oxide films (Al 2 O 3 ) are separated from each other. It can be sorted and aligned on polycrystalline silicon or monocrystalline silicon (8 inches or 12 inches) and bonded and large diameter bonded using commonly known bonding techniques.
  • the lower substrate uses monocrystalline silicon, polycrystalline silicon, monocrystalline / polycrystalline silicon carbide (SiC), polycrystalline aluminum oxide (Al 2 O 3 ), and the like. If used, the substrate can be selected and used accordingly.
  • the aluminum film 221 may have a pattern as shown in FIG. 6 or 7. That is, in FIGS. 6 and 7, the aluminum film is patterned to have a plurality of polygonal cells 221A and 221B that can be separated from each other, and the spaces 223A and 223B formed by etching are formed between the cells 221A and 221B. Included.
  • FIG. 8 is a plan view conceptually illustrating a state in which a patterned upper substrate formed of a single crystal is bonded to a large diameter wafer. 6 or 7, the patterned Al 2 O 3 single crystal cells 220 smaller than the support substrate 230 are sorted and aligned on the support substrate 230 and bonded by bonding.
  • Such a method can solve the problem that the size of the support substrate is limited according to the case of using a single crystal film, and in particular, it can be used for large diameter wafers, thereby helping to lower the manufacturing cost and increase productivity.
  • FIG. 9 is a process flowchart showing an example of a method of forming a substrate using a silicon single crystal substrate.
  • the silicon single crystal substrate 300 is subjected to wet chemical pretreatment, and then made of a material different from the silicon single crystal substrate 300 such as silicon germanium (SiGe), silicon carbide (SiC), germanium (Ge), or at least one compound.
  • a thin film oxide layer is formed to a thickness of 50 GPa or less.
  • the formation method is a thermally grown method.
  • an aluminum oxide epi layer is formed to about 50 nm or less.
  • the aluminum film 320 is deposited by about 100 nm, and heat treatment is performed in an oxygen atmosphere near 450 degrees to convert the aluminum film 320 into a polycrystalline aluminum oxide film.
  • heat treatment is performed in an oxygen atmosphere of 1000 ° C. or higher to convert the polycrystalline aluminum oxide film into a single crystal aluminum oxide film 321 having a lower structure.
  • GaN gallium nitride
  • a photo process is performed to define the photoresist to a desired area, and then the lower single crystal aluminum oxide layer 321 is etched by an etching method, and the oxide layer serving as an interlayer is further etched.
  • the exposed SiGe epitaxial layer 310 is removed by wet chemical treatment, the single crystal aluminum oxide layer 321 and the single crystal silicon substrate 300 are separated.
  • the separated single crystal aluminum oxide layer 321 may be transferred to another support substrate 330 such as polycrystalline aluminum oxide, silicon carbide, polycrystalline silicon, or the like, and bonded to be used as a substrate.
  • a pretreatment with wet chemical is performed on the silicon single crystal substrate, and then an epitaxial layer formed of a silicon single crystal substrate such as silicon germanium (SiGe), silicon carbide (SiC), germanium (Ge) and other materials or at least one compound is formed.
  • the thin film oxide layer is formed to a thickness of 50 GPa or less.
  • the formation method is a thermally grown method.
  • the aluminum film is deposited to about 100 nm, and then the photo process is performed to etch the aluminum film, the oxide layer, and the lower deposition layer. If necessary, only the oxide layer may be etched. This method prevents hilllock or the like in the aluminum film during the subsequent heat treatment of the aluminum film or facilitates subsequent wet chemical treatment.
  • heat treatment is performed for 10 to 14 hours in an oxygen atmosphere of 400 to 500 ° C. to convert the aluminum film into a polycrystalline aluminum oxide film. Thereafter, heat treatment is performed in an oxygen atmosphere of 1000 ° C. or higher to convert the polycrystalline aluminum oxide film into a single crystal aluminum oxide film. It can also be used as a substrate for raising GaN layers such as LEDs in the future.
  • a thin film oxide layer is formed to a thickness of 50 GPa or less. However, this process may be omitted in some cases.
  • polycrystalline Al 2 O 3 is directly deposited, and heat treatment is performed at a temperature lower than 1000 ° C., more specifically, at a temperature atmosphere of about 450 ° C.
  • heat treatment is performed for about 24 hours in an oxygen atmosphere of 1000 ° C. or higher to convert the polycrystalline Al 2 O 3 into a single crystal aluminum oxide film. This can reduce the number of processes and help reduce manufacturing costs.
  • epitaxial layers such as silicon germanium (SiGe), silicon carbide (SiC), aluminum nitride (AlN), and the like are formed, and a thin film oxide layer is formed to a thickness of 50 GPa or less.
  • the epi layer may be formed of one or a plurality of layers.
  • polycrystalline aluminum oxide is deposited instead of the aluminum film directly, and heat treatment is performed at a temperature lower than 1000 ⁇ ⁇ , more specifically, at a temperature of about 450 ⁇ ⁇ . Thereafter, heat treatment is performed for about 24 hours in an oxygen atmosphere of 1000 ° C. or higher to convert the polycrystalline Al 2 O 3 into a single crystal aluminum oxide film. It can be used directly as a substrate for growing GaN layers such as LEDs in the future.
  • FIG. 10 is a process flowchart showing another example of a method of forming a substrate using a silicon single crystal substrate.
  • a deposition layer 410 such as GaN is formed on the sapphire single crystal substrate 400, and a pattern is etched to expose the lower sapphire substrate 400.
  • oxidation is performed to form an oxide layer on the surface of the deposition layer 410, or a material such as gallium nitride (GaN), aluminum nitride (AlN), chromium nitride (CrN), or the like, which is a barrier material to which aluminum does not react later ( 420 may be deposited.
  • GaN gallium nitride
  • AlN aluminum nitride
  • CrN chromium nitride
  • heat treatment is performed for about 24 hours in an oxygen atmosphere of 1000 ° C. or higher to convert the polycrystalline Al 2 O 3 into a single crystal aluminum oxide film 440.
  • the temperature may be raised to 1200 ° C, 1400 ° C, and 1600 ° C.
  • the GaN deposition layer 410 is decomposed at the interface between the GaN deposition layer 410 and the sapphire substrate 400 by performing laser lift-off on the back surface of the sapphire substrate 400, and then formed of a single crystal aluminum oxide film ( After bonding the supporting substrate 430 onto the substrate 430, the single crystal Al 2 O 3 and the sapphire substrate 400 are separated due to the nitrogen (N 2 ) partial pressure decomposed in the GaN deposition layer 410 by applying a temperature of about 250 ° C. or higher. To be separated. In order to maximize the effect, it may be possible to accelerate the separation by grasping the part up and down and applying a force in the opposite direction.
  • the support substrate 430 prevents the single crystal Al 2 O 3 layer from breaking when the temperature is applied.
  • the GaN deposition layer 410 which is an unnecessary structure, is etched by a method such as wet chemical or plasma etching, and the single crystal Al 2 O 3 of the uneven portion is planarized by chemical mechanical polishing (CMP) to obtain a final flat structure.
  • CMP chemical mechanical polishing
  • the single crystal Al 2 O 3 thus obtained may be processed to various sizes and reattached to other substrates for use.
  • the above methods can be applied after pre-patterning a single crystal silicon substrate and depositing a thin oxide film thereon.
  • an oxide film is deposited on the single crystal silicon substrate, the single crystal is formed in Example 8, and then subjected to photoresist and etching.
  • This method can reduce stress due to lattice mismatch with a silicon substrate when forming single crystal Al 2 O 3 .
  • the above methods may be applied after patterning the substrate in advance to form trenches or cones. This method is to pattern the lower substrate to create a passage through which wet chemicals can penetrate well in later wet etching.
  • Aluminum nitride / gallium nitride is first grown on a single-crystal silicon substrate, followed by Al 2 O 3 epitaxy, and then aluminum or aluminum oxide (Al 2 O 3 ) is used to grow thicker Al 2 O 3 and then laser lift again. Guide to remove the Al 2 O 3 such as in off-bonded to other substrates is to use as the substrate.
  • the GaN deposition layer is grown on a single crystal silicon substrate by 50 to 100 ⁇ by Atomic Layer Deposition (ALD), and the oxide layer is grown to about 50 ⁇ first (can be omitted), followed by Al 2 O 3 epitaxy. Then, Al 2 O 3 is made thicker by using aluminum or aluminum oxide (Al 2 O 3 ), and Al 2 O 3 is separated by laser lift-off and bonded to another substrate to use as a substrate. .
  • ALD Atomic Layer Deposition
  • the GaN deposition layer is grown on a single crystal silicon substrate by 50 to 100 ⁇ by atomic layer coating, the oxide layer is grown to about 50 ⁇ first (can be omitted), and then subjected to Al 2 O 3 epitaxy, followed by aluminum or oxide Al 2 O 3 is made thicker using aluminum (Al 2 O 3 ), and Al 2 O 3 is removed by laser lift-off and then bonded to another substrate to be used as a substrate.
  • a minimum oxide film is formed on a silicon (Si) single crystal substrate. Specifically, it can be formed in a thickness of about 2 to 30 kPa.
  • an aluminum oxide (Al 2 O 3 ) epi layer is formed on the oxide film.
  • Al 2 O 3 aluminum oxide
  • the thickness of the epi layer may be 2 to 100 nm, and the thickness of the aluminum (Al) film may be 50 to 2000 nm.
  • a polycrystalline aluminum oxide film is formed by heat treatment and additional O 2 atmosphere heat treatment, and heat-treated at a temperature of 1000 ° C. or higher for a predetermined time to convert to a single crystal aluminum oxide (Al 2 O 3 ) film to obtain a single crystal film having a sufficient thickness.
  • the substrate forming method and the substrate described above are not limited to the configuration and method of the embodiments described above.
  • the above embodiments may be configured by selectively combining all or some of the embodiments so that various modifications may be made.

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  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un procédé de formation d'un substrat. Le procédé de formation de substrat comprend les étapes suivantes : formation d'une couche de dépôt constituée de différents matériaux sur un substrat monocristallin ; dépôt d'un film d'aluminium (Al) sur la couche de dépôt ; oxydation et monocristallisation du film d'aluminium ; désintégration de la couche de dépôt afin de séparer l'oxyde d'aluminium (Al2O3) monocristallisé de la couche de dépôt ; et attachement de l'oxyde d'aluminium (Al2O3) moncristallin séparé à un substrat de support.
PCT/KR2012/004732 2011-06-21 2012-06-15 Procédé de formation d'un substrat et substrat ainsi formé Ceased WO2012177019A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110060214A KR101190677B1 (ko) 2011-06-21 2011-06-21 기판 형성 방법 및 그 기판
KR10-2011-0060214 2011-06-21

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WO2012177019A2 true WO2012177019A2 (fr) 2012-12-27
WO2012177019A3 WO2012177019A3 (fr) 2013-04-04

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WO (1) WO2012177019A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118727136A (zh) * 2024-08-14 2024-10-01 中国科学院半导体研究所 氮化镓单晶片及其制备方法和应用

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KR101301197B1 (ko) * 2012-11-06 2013-08-28 (주)이피글로벌 Led 칩 기판용 사파이어 단결정 박막의 제조방법 및 이로부터 제조된 led 칩

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KR100477075B1 (ko) 2002-01-14 2005-03-17 엘지이노텍 주식회사 질화물 반도체 제조방법
JP2004051446A (ja) 2002-07-22 2004-02-19 Asahi Kasei Corp 酸化物単結晶薄膜形成方法および半導体薄膜形成方法
JP4350484B2 (ja) 2003-10-31 2009-10-21 日本碍子株式会社 窒化アルミニウム単結晶の製造方法
JP2011077102A (ja) * 2009-09-29 2011-04-14 Toyoda Gosei Co Ltd ウエハ、ｉｉｉ族窒化物系化合物半導体素子、及びそれらの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118727136A (zh) * 2024-08-14 2024-10-01 中国科学院半导体研究所 氮化镓单晶片及其制备方法和应用

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KR101190677B1 (ko) 2012-10-12
WO2012177019A3 (fr) 2013-04-04

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