WO2013019063A3 - 에피택셜 공정을 위한 반도체 제조설비 - Google Patents

에피택셜 공정을 위한 반도체 제조설비 Download PDF

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Publication number
WO2013019063A3
WO2013019063A3 PCT/KR2012/006106 KR2012006106W WO2013019063A3 WO 2013019063 A3 WO2013019063 A3 WO 2013019063A3 KR 2012006106 W KR2012006106 W KR 2012006106W WO 2013019063 A3 WO2013019063 A3 WO 2013019063A3
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Prior art keywords
chamber
cleansing
epitaxial
takes place
substrate
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Ceased
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PCT/KR2012/006106
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English (en)
French (fr)
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WO2013019063A2 (ko
Inventor
김영대
현준진
우상호
신승우
김해원
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Eugene Technology Co Ltd
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Eugene Technology Co Ltd
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Priority to CN201280037860.1A priority Critical patent/CN103718273B/zh
Priority to US14/235,322 priority patent/US20140144375A1/en
Priority to JP2014523842A priority patent/JP5899318B2/ja
Publication of WO2013019063A2 publication Critical patent/WO2013019063A2/ko
Publication of WO2013019063A3 publication Critical patent/WO2013019063A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only

Abstract

본 발명의 일 실시예에 의하면, 반도체 제조설비는 기판에 대한 세정 공정이 이루어지는 세정 챔버; 상기 기판 상에 에피택셜 층을 형성하는 에피택셜 공정이 이루어지는 에피택셜 챔버; 그리고 상기 세정 챔버 및 상기 에피택셜 챔버가 측면에 연결되며, 상기 세정 공정이 완료된 상기 기판을 상기 에피택셜 챔버로 이송하는 기판 핸들러를 구비하는 이송 챔버를 포함하고, 상기 세정 챔버는, 상기 이송 챔버의 측면에 연결되며, 상기 기판에 대한 반응공정이 이루어지는 반응 챔버; 그리고 상기 이송 챔버의 측면에 연결되며, 상기 기판에 대한 가열공정이 이루어지는 히팅 챔버를 구비하며, 상기 반응 챔버와 상기 히팅 챔버는 상하로 적재되는 것을 특징으로 한다.
PCT/KR2012/006106 2011-08-02 2012-07-31 에피택셜 공정을 위한 반도체 제조설비 Ceased WO2013019063A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280037860.1A CN103718273B (zh) 2011-08-02 2012-07-31 用于外延工艺的半导体制造设备
US14/235,322 US20140144375A1 (en) 2011-08-02 2012-07-31 Equipment for manufacturing semiconductor
JP2014523842A JP5899318B2 (ja) 2011-08-02 2012-07-31 エピタキシャルプロセスのための半導体製造設備

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110077101A KR101252742B1 (ko) 2011-08-02 2011-08-02 에피택셜 공정을 위한 반도체 제조설비
KR10-2011-0077101 2011-08-02

Publications (2)

Publication Number Publication Date
WO2013019063A2 WO2013019063A2 (ko) 2013-02-07
WO2013019063A3 true WO2013019063A3 (ko) 2013-04-04

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US (1) US20140144375A1 (ko)
JP (1) JP5899318B2 (ko)
KR (1) KR101252742B1 (ko)
CN (1) CN103718273B (ko)
TW (1) TWI525735B (ko)
WO (1) WO2013019063A2 (ko)

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