WO2013019061A3 - 에피택셜 공정을 위한 반도체 제조설비 - Google Patents

에피택셜 공정을 위한 반도체 제조설비 Download PDF

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Publication number
WO2013019061A3
WO2013019061A3 PCT/KR2012/006103 KR2012006103W WO2013019061A3 WO 2013019061 A3 WO2013019061 A3 WO 2013019061A3 KR 2012006103 W KR2012006103 W KR 2012006103W WO 2013019061 A3 WO2013019061 A3 WO 2013019061A3
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WO
WIPO (PCT)
Prior art keywords
chamber
substrate
epitaxial
cleansing
equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/006103
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English (en)
French (fr)
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WO2013019061A2 (ko
Inventor
김영대
현준진
우상호
신승우
김해원
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Eugene Technology Co Ltd
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Eugene Technology Co Ltd
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Publication date
Application filed by Eugene Technology Co Ltd filed Critical Eugene Technology Co Ltd
Priority to CN201280037955.3A priority Critical patent/CN103733309B/zh
Priority to US14/235,901 priority patent/US20140209024A1/en
Priority to JP2014523840A priority patent/JP5844899B2/ja
Publication of WO2013019061A2 publication Critical patent/WO2013019061A2/ko
Publication of WO2013019061A3 publication Critical patent/WO2013019061A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명의 일 실시예에 의하면, 반도체 제조설비는 기판에 대한 세정 공정이 이루어지는 세정 챔버; 상기 기판 상에 에피택셜 층을 형성하는 에피택셜 공정이 이루어지는 에피택셜 챔버; 상기 기판을 적재하는 적재공간을 구비하는 버퍼 챔버; 그리고 상기 세정 챔버 및 상기 버퍼 챔버, 그리고 상기 에피택셜 챔버가 측면에 연결되며, 상기 세정 챔버 및 상기 버퍼 챔버, 그리고 상기 에피택셜 챔버 사이에서 상기 기판을 이송하는 기판 핸들러를 구비하는 이송 챔버를 포함하며, 상기 기판 핸들러는 상기 세정 공정이 완료된 상기 기판을 상기 적재공간에 순차적으로 적재한 후 적재된 상기 기판들을 상기 에피택셜 챔버로 이송하며, 상기 에피택셜 층이 형성된 상기 기판을 상기 적재공간에 순차적으로 적재하는 것을 특징으로 한다.
PCT/KR2012/006103 2011-08-02 2012-07-31 에피택셜 공정을 위한 반도체 제조설비 Ceased WO2013019061A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280037955.3A CN103733309B (zh) 2011-08-02 2012-07-31 用于外延工艺的半导体制造设备
US14/235,901 US20140209024A1 (en) 2011-08-02 2012-07-31 Equipment for manufacturing semiconductor
JP2014523840A JP5844899B2 (ja) 2011-08-02 2012-07-31 エピタキシャルプロセスのための半導体製造設備

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110077099A KR101271246B1 (ko) 2011-08-02 2011-08-02 에피택셜 공정을 위한 반도체 제조설비
KR10-2011-0077099 2011-08-02

Publications (2)

Publication Number Publication Date
WO2013019061A2 WO2013019061A2 (ko) 2013-02-07
WO2013019061A3 true WO2013019061A3 (ko) 2013-04-04

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PCT/KR2012/006103 Ceased WO2013019061A2 (ko) 2011-08-02 2012-07-31 에피택셜 공정을 위한 반도체 제조설비

Country Status (6)

Country Link
US (1) US20140209024A1 (ko)
JP (1) JP5844899B2 (ko)
KR (1) KR101271246B1 (ko)
CN (1) CN103733309B (ko)
TW (1) TWI493641B (ko)
WO (1) WO2013019061A2 (ko)

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KR101271248B1 (ko) * 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
JP2016039355A (ja) * 2014-08-06 2016-03-22 ピーエスケー・インコーポレーテッド 基板処理装置及び基板処理方法
KR101685095B1 (ko) * 2015-04-16 2016-12-09 주식회사 유진테크 기판 버퍼링 장치, 기판처리설비, 및 기판처리방법
KR101720620B1 (ko) * 2015-04-21 2017-03-28 주식회사 유진테크 기판처리장치 및 챔버 세정방법
KR101760316B1 (ko) * 2015-09-11 2017-07-21 주식회사 유진테크 기판처리장치
KR101685096B1 (ko) * 2015-11-17 2016-12-12 주식회사 유진테크 기판처리장치 및 이를 이용한 기판처리방법
KR102151323B1 (ko) * 2017-02-17 2020-09-02 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체에 기록된 프로그램
US10388547B2 (en) 2017-06-23 2019-08-20 Applied Materials, Inc. Side storage pods, equipment front end modules, and methods for processing substrates
CN110770890B (zh) 2017-06-23 2023-09-08 应用材料公司 可索引侧储存仓设备、加热的侧储存仓设备、系统和方法
WO2021044622A1 (ja) 2019-09-06 2021-03-11 キヤノンアネルバ株式会社 ロードロック装置
US11996307B2 (en) * 2020-12-23 2024-05-28 Applied Materials, Inc. Semiconductor processing tool platform configuration with reduced footprint
CN114420635A (zh) * 2021-12-28 2022-04-29 江苏第三代半导体研究院有限公司 外延片剥离装置

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Also Published As

Publication number Publication date
JP2014524657A (ja) 2014-09-22
JP5844899B2 (ja) 2016-01-20
US20140209024A1 (en) 2014-07-31
KR101271246B1 (ko) 2013-06-07
TWI493641B (zh) 2015-07-21
CN103733309B (zh) 2016-05-25
CN103733309A (zh) 2014-04-16
TW201316429A (zh) 2013-04-16
KR20130015221A (ko) 2013-02-13
WO2013019061A2 (ko) 2013-02-07

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