WO2013045367A3 - Elektronische baugruppe mit hochtemperaturstabilem substratgrundwerkstoff, verfahren zu ihrer herstellung und ihre verwendung in einer leistungselektronik - Google Patents

Elektronische baugruppe mit hochtemperaturstabilem substratgrundwerkstoff, verfahren zu ihrer herstellung und ihre verwendung in einer leistungselektronik Download PDF

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Publication number
WO2013045367A3
WO2013045367A3 PCT/EP2012/068666 EP2012068666W WO2013045367A3 WO 2013045367 A3 WO2013045367 A3 WO 2013045367A3 EP 2012068666 W EP2012068666 W EP 2012068666W WO 2013045367 A3 WO2013045367 A3 WO 2013045367A3
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WO
WIPO (PCT)
Prior art keywords
substrate
power component
electronic assembly
basic material
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/068666
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English (en)
French (fr)
Other versions
WO2013045367A2 (de
Inventor
Daniel Wolde-Giorgis
Bernd Hohenberger
Thomas Kalich
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Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
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Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2013045367A2 publication Critical patent/WO2013045367A2/de
Publication of WO2013045367A3 publication Critical patent/WO2013045367A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01321—Manufacture or treatment of die-attach connectors using local deposition
    • H10W72/01323—Manufacture or treatment of die-attach connectors using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01321—Manufacture or treatment of die-attach connectors using local deposition
    • H10W72/01325—Manufacture or treatment of die-attach connectors using local deposition in solid form
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01351—Changing the shapes of die-attach connectors
    • H10W72/01357—Changing the shapes of die-attach connectors by reflowing or heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01361—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01365—Thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07332—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07341—Controlling the bonding environment, e.g. atmosphere composition or temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/322—Multilayered die-attach connectors, e.g. a coating on a top surface of a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347—Dispositions of multiple die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Die Bonding (AREA)

Abstract

Die Erfindung betrifft eine elektronische Baugruppe (10) umfassend ein elektronisches Leistungsbauteil (11) und mindestens ein Substrat (12), - wobei das Substrat (12) Aluminium, Magnesium oder Mangan oder eine Aluminium-, Magnesium- oder Manganlegierung als Substratgrundwerkstoff umfasst, - wobei das Substrat (12) mit einer Oberflächenbeschichtung aus Ag, Au, Pd, Sn oder aus einer Ag-, Au-, Pd- oder Sn-Legierung oder mit einer Schichtabfolge (14a, 14b) mindestens zweier dieser Metalle oder Legierungen auf der dem Leistungsbauteil (11) zugewandten Seite zumindest teilweise versehen ist, und - wobei das Leistungsbauteil (11) mittels einer Silbersinterverbindungsschicht (20) an das Substrat (12) angebunden ist. Die Baugruppe (10) kann mindestens ein erstes und ein zweites Substrat (12, 12a) umfassen, wobei das Leistungsbauteil (11) auf zwei gegenüberliegenden Seiten jeweils mittels einer Sinterverbindungsschicht (20) an das erste Substrat (12) und an das zweite Substrat (12a) angebunden ist. Die Baugruppe kann auch ein erstes Leistungsbauteil und ein zweites Leistungsbauteil umfassen, wobei die Leistungsbauteile auf gegenüberliegenden Seiten des Substrats aufgebracht und jeweils mit einer Sinterverbindungsschicht an das Substrat angebunden sind. Die Erfindung betrifft weiterhin ein Verfahren zur Herstellung einer elektronischen Baugruppe (10) sowie die Verwendung einer erfindungsgemäßen elektronischen Baugruppe (10) in einer Leistungselektronik, z.B. als Teil einer Einpressdiode, beispielsweise an einem Generatorschild. Der Gegenstand der vorliegenden Erfindung kann vorteilhafterweise eine verbesserte Zuverlässigkeit bei Temperaturwechseln zeigen, insbesondere bei Baugruppen, in denen Fügeverbindungen bei hohen Einsatztemperaturen verwendet werden. Aufgrund der geringeren Materialkosten des Substratgrundwerkstoffs kann insgesamt die Herstellung von hochtemperaturstabilen Leistungsbauteilen kostengünstiger gestaltet werden.
PCT/EP2012/068666 2011-09-30 2012-09-21 Elektronische baugruppe mit hochtemperaturstabilem substratgrundwerkstoff Ceased WO2013045367A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011083911A DE102011083911A1 (de) 2011-09-30 2011-09-30 Elektronische Baugruppe mit hochtemperaturstabilem Substratgrundwerkstoff
DE102011083911.9 2011-09-30

Publications (2)

Publication Number Publication Date
WO2013045367A2 WO2013045367A2 (de) 2013-04-04
WO2013045367A3 true WO2013045367A3 (de) 2013-05-30

Family

ID=47046541

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/068666 Ceased WO2013045367A2 (de) 2011-09-30 2012-09-21 Elektronische baugruppe mit hochtemperaturstabilem substratgrundwerkstoff

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Country Link
DE (1) DE102011083911A1 (de)
WO (1) WO2013045367A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014104272A1 (de) 2014-03-26 2015-10-01 Heraeus Deutschland GmbH & Co. KG Träger und Clip jeweils für ein Halbleiterelement, Verfahren zur Herstellung, Verwendung und Sinterpaste
FR3123165B1 (fr) * 2021-05-18 2024-03-01 Tem Machine électrique tournante à aimants surfaciques

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3414065A1 (de) * 1984-04-13 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung
EP1684340A2 (de) * 2005-01-20 2006-07-26 Nissan Motor Co., Ltd. Verfahren zum Bonden einer Halbleitervorrichtung auf ein metallisches Substrat
WO2010072534A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Hochtemperaturbeständige lötmittelfreie bauelementstruktur und verfahren zum elektrischen kontaktieren
DE102009002100A1 (de) * 2009-04-01 2010-10-07 Robert Bosch Gmbh Elektrisches Bauelement
DE102010001666A1 (de) * 2010-02-08 2011-08-11 Robert Bosch GmbH, 70469 Elektrisches oder elektronisches Verbundbauteil

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004019567B3 (de) * 2004-04-22 2006-01-12 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat
DE102005047567B3 (de) * 2005-10-05 2007-03-29 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Isolationszwischenlage und Verfahren zu seiner Herstellung
DE102008009510B3 (de) 2008-02-15 2009-07-16 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3414065A1 (de) * 1984-04-13 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung
EP1684340A2 (de) * 2005-01-20 2006-07-26 Nissan Motor Co., Ltd. Verfahren zum Bonden einer Halbleitervorrichtung auf ein metallisches Substrat
WO2010072534A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Hochtemperaturbeständige lötmittelfreie bauelementstruktur und verfahren zum elektrischen kontaktieren
DE102009002100A1 (de) * 2009-04-01 2010-10-07 Robert Bosch Gmbh Elektrisches Bauelement
DE102010001666A1 (de) * 2010-02-08 2011-08-11 Robert Bosch GmbH, 70469 Elektrisches oder elektronisches Verbundbauteil

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WO2013045367A2 (de) 2013-04-04
DE102011083911A1 (de) 2013-04-04

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