WO2013050332A3 - Solution pour cuivrage autocatalytique exempte de formaldéhyde - Google Patents

Solution pour cuivrage autocatalytique exempte de formaldéhyde Download PDF

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Publication number
WO2013050332A3
WO2013050332A3 PCT/EP2012/069388 EP2012069388W WO2013050332A3 WO 2013050332 A3 WO2013050332 A3 WO 2013050332A3 EP 2012069388 W EP2012069388 W EP 2012069388W WO 2013050332 A3 WO2013050332 A3 WO 2013050332A3
Authority
WO
WIPO (PCT)
Prior art keywords
copper plating
formaldehyde
plating solution
electroless copper
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/069388
Other languages
English (en)
Other versions
WO2013050332A8 (fr
WO2013050332A2 (fr
Inventor
Edith STEINHÄUSER
Sandra RÖSELER
Stefanie WIESE
Tang Cam Lai NGUYEN
Lutz Stamp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atotech Deutschland GmbH and Co KG
Original Assignee
Atotech Deutschland GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atotech Deutschland GmbH and Co KG filed Critical Atotech Deutschland GmbH and Co KG
Priority to US14/350,153 priority Critical patent/US20140242264A1/en
Priority to JP2014533846A priority patent/JP6180419B2/ja
Priority to EP12766668.3A priority patent/EP2764135A2/fr
Priority to CN201280049015.6A priority patent/CN104040026B/zh
Priority to KR1020147008668A priority patent/KR101953940B1/ko
Publication of WO2013050332A2 publication Critical patent/WO2013050332A2/fr
Publication of WO2013050332A8 publication Critical patent/WO2013050332A8/fr
Publication of WO2013050332A3 publication Critical patent/WO2013050332A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

La présente invention porte sur une solution aqueuse pour cuivrage autocatalytique, comprenant une source d'ions cuivre, une source d'acide glyoxylique servant d'agent réducteur et au moins un acide polyaminodisuccinique ou au moins un acide polyaminomonosuccinique, ou un mélange d'au moins un acide polyaminodisuccinique et d'au moins un acide polyaminomonosuccinique servant d'agent complexant, ainsi que sur un procédé pour le cuivrage autocatalytique utilisant ladite solution et sur l'utilisation de la solution pour le placage de substrats.
PCT/EP2012/069388 2011-10-05 2012-10-01 Solution pour cuivrage autocatalytique exempte de formaldéhyde Ceased WO2013050332A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US14/350,153 US20140242264A1 (en) 2011-10-05 2012-10-01 Formaldehyde-free electroless copper plating solution
JP2014533846A JP6180419B2 (ja) 2011-10-05 2012-10-01 ホルムアルデヒドのない無電解銅めっき溶液
EP12766668.3A EP2764135A2 (fr) 2011-10-05 2012-10-01 Solution pour cuivrage autocatalytique exempte de formaldéhyde
CN201280049015.6A CN104040026B (zh) 2011-10-05 2012-10-01 不含甲醛的化学镀镀铜溶液
KR1020147008668A KR101953940B1 (ko) 2011-10-05 2012-10-01 무전해 구리 도금 수용액

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11183991.6 2011-10-05
EP11183991 2011-10-05

Publications (3)

Publication Number Publication Date
WO2013050332A2 WO2013050332A2 (fr) 2013-04-11
WO2013050332A8 WO2013050332A8 (fr) 2013-07-11
WO2013050332A3 true WO2013050332A3 (fr) 2014-03-13

Family

ID=46963736

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/069388 Ceased WO2013050332A2 (fr) 2011-10-05 2012-10-01 Solution pour cuivrage autocatalytique exempte de formaldéhyde

Country Status (7)

Country Link
US (1) US20140242264A1 (fr)
EP (1) EP2764135A2 (fr)
JP (1) JP6180419B2 (fr)
KR (1) KR101953940B1 (fr)
CN (1) CN104040026B (fr)
TW (1) TWI557271B (fr)
WO (1) WO2013050332A2 (fr)

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EP2784181B1 (fr) * 2013-03-27 2015-12-09 ATOTECH Deutschland GmbH Solution de dépôt de cuivre chimique
MY173728A (en) * 2013-09-25 2020-02-18 Atotech Deutschland Gmbh Method for depositing a copper seed layer onto a barrier layer
WO2015111291A1 (fr) * 2014-01-27 2015-07-30 奥野製薬工業株式会社 Bain formant un film conducteur
JP6539992B2 (ja) * 2014-11-14 2019-07-10 凸版印刷株式会社 配線回路基板、半導体装置、配線回路基板の製造方法、半導体装置の製造方法
US20160145745A1 (en) * 2014-11-24 2016-05-26 Rohm And Haas Electronic Materials Llc Formaldehyde-free electroless metal plating compositions and methods
EP3035122B1 (fr) 2014-12-16 2019-03-20 ATOTECH Deutschland GmbH Procédé de fabrication de lignes fines
EP3035375B1 (fr) * 2014-12-19 2017-05-03 ATOTECH Deutschland GmbH Module de traitement d'un appareil pour traiter chimiquement et horizontalement des substrats de grande taille
EP3452635B1 (fr) 2016-05-04 2020-02-26 ATOTECH Deutschland GmbH Procédé de dépôt d'un métal ou d'alliage métallique sur une surface d'un substrat comprenant son activation
KR102428755B1 (ko) * 2017-11-24 2022-08-02 엘지디스플레이 주식회사 파장 변환이 가능한 광섬유 및 이를 사용하는 백라이트 유닛
EP3578683B1 (fr) 2018-06-08 2021-02-24 ATOTECH Deutschland GmbH Bain de placage de cuivre ou d'alliage de cuivre autocatalytique et procédé de galvanoplastie
EP3670698B1 (fr) 2018-12-17 2021-08-11 ATOTECH Deutschland GmbH Solution de prétraitement alcalin aqueux à utiliser avant le dépôt d'une couche d'activation de palladium, son procédé et son utilisation
MX2021012121A (es) 2019-04-04 2021-11-03 Atotech Deutschland Gmbh Un metodo para activar una superficie de un sustrato no conductor o que contiene fibras de carbono para metalizacion.
EP3839092A1 (fr) 2019-12-20 2021-06-23 ATOTECH Deutschland GmbH Procédé d'activation d'au moins une surface, composition d'activation et utilisation de la composition d'activation pour activer une surface de dépôt autocatalytique
TWI906354B (zh) 2020-08-27 2025-12-01 德商德國艾托特克公司 活化用於金屬化之非導電或含碳纖維基材之表面的方法
JP7735686B2 (ja) * 2021-05-24 2025-09-09 三菱瓦斯化学株式会社 無電解銅めっき用組成物および無電解銅めっき方法
CN114507850A (zh) * 2021-12-06 2022-05-17 华东理工大学 一种喷墨打印在陶瓷基板上非甲醛化学镀铜的环保型镀液的化学配方
CN115679305B (zh) * 2023-01-03 2023-03-10 湖南源康利科技有限公司 一种印制板用铝箔表面化学镀铜处理工艺
WO2025051732A1 (fr) 2023-09-07 2025-03-13 Atotech Deutschland GmbH & Co. KG Procédé d'activation d'une surface d'un substrat non-conducteur ou contenant des fibres de carbone destiné à la métallisation

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US5741555A (en) * 1995-05-22 1998-04-21 The Dow Chemical Company Succinic acid derivative degradable chelants, uses and compositions thereof
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US7220296B1 (en) * 2005-12-15 2007-05-22 Intel Corporation Electroless plating baths for high aspect features
EP1876262A1 (fr) * 2006-07-07 2008-01-09 Rohm and Haas Electronic Materials, L.L.C. Compositions de dépôt autocatalytique sans danger pour lýenvironnement

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KR100529371B1 (ko) * 2003-07-29 2005-11-21 주식회사 엘지화학 촉매전구체 수지조성물 및 이를 이용한 투광성 전자파차폐재 제조방법
KR100767943B1 (ko) * 2003-10-17 2007-10-17 닛코킨조쿠 가부시키가이샤 무전해 구리도금액 및 무전해 구리도금방법
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KR20080083790A (ko) * 2007-03-13 2008-09-19 삼성전자주식회사 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617205A (en) * 1984-12-21 1986-10-14 Omi International Corporation Formaldehyde-free autocatalytic electroless copper plating
US5741555A (en) * 1995-05-22 1998-04-21 The Dow Chemical Company Succinic acid derivative degradable chelants, uses and compositions thereof
US5846925A (en) * 1995-08-30 1998-12-08 The Dow Chemical Company Succinic acid derivative degradable chelants, uses and compositions thereof
US7220296B1 (en) * 2005-12-15 2007-05-22 Intel Corporation Electroless plating baths for high aspect features
EP1876262A1 (fr) * 2006-07-07 2008-01-09 Rohm and Haas Electronic Materials, L.L.C. Compositions de dépôt autocatalytique sans danger pour lýenvironnement

Also Published As

Publication number Publication date
CN104040026B (zh) 2019-01-01
US20140242264A1 (en) 2014-08-28
WO2013050332A8 (fr) 2013-07-11
EP2764135A2 (fr) 2014-08-13
TW201323654A (zh) 2013-06-16
KR20140090145A (ko) 2014-07-16
TWI557271B (zh) 2016-11-11
CN104040026A (zh) 2014-09-10
WO2013050332A2 (fr) 2013-04-11
JP2014528517A (ja) 2014-10-27
JP6180419B2 (ja) 2017-08-16
KR101953940B1 (ko) 2019-03-04

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