WO2013102725A3 - Cellule photovoltaïque et procédé de réalisation - Google Patents

Cellule photovoltaïque et procédé de réalisation Download PDF

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Publication number
WO2013102725A3
WO2013102725A3 PCT/FR2013/000006 FR2013000006W WO2013102725A3 WO 2013102725 A3 WO2013102725 A3 WO 2013102725A3 FR 2013000006 W FR2013000006 W FR 2013000006W WO 2013102725 A3 WO2013102725 A3 WO 2013102725A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
amorphous
photovoltaic cell
conductivity type
electrically insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2013/000006
Other languages
English (en)
Other versions
WO2013102725A2 (fr
Inventor
Thibaut Desrues
Sylvain DE VECCHI
Florent Souche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat à l'Énergie Atomique et Aux Énergies Alternatives filed Critical Commissariat a lEnergie Atomique CEA
Priority to KR1020147021671A priority Critical patent/KR20140112537A/ko
Priority to JP2014550744A priority patent/JP2015506584A/ja
Priority to EP13704145.5A priority patent/EP2801116A2/fr
Priority to US14/370,857 priority patent/US20140373919A1/en
Publication of WO2013102725A2 publication Critical patent/WO2013102725A2/fr
Publication of WO2013102725A3 publication Critical patent/WO2013102725A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

Cellule photovoltaïque comportant un substrat semi-conducteur d'un premier type de conductivité (1) muni d'une face principale, une première couche en matériau semi-conducteur amorphe (2) du premier type de conductivité en contact avec la face principale du substrat (1 ), un premier contact électrique (3) formé sur la première couche amorphe (2), une deuxième couche en matériau semi-conducteur amorphe (4) d'un second type de conductivité en contact avec la face principale du substrat (1), un second contact électrique (5) formé sur la deuxième couche amorphe (4) et une couche électriquement isolante (6), cellule caractérisée en ce que la couche électriquement isolante (6) est formée intégralement sur la première couche amorphe (2) et que les premier et deuxième contacts (3,5) s'étendent sur la couche électriquement isolante (6).
PCT/FR2013/000006 2012-01-05 2013-01-03 Cellule photovoltaïque et procédé de réalisation Ceased WO2013102725A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020147021671A KR20140112537A (ko) 2012-01-05 2013-01-03 광기전력 셀 및 제조 방법
JP2014550744A JP2015506584A (ja) 2012-01-05 2013-01-03 光起電力セル及び製造方法
EP13704145.5A EP2801116A2 (fr) 2012-01-05 2013-01-03 Cellule photovoltaïque et procédé de réalisation
US14/370,857 US20140373919A1 (en) 2012-01-05 2013-01-03 Photovoltaic cell and manufacturing process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1200037 2012-01-05
FR1200037A FR2985608B1 (fr) 2012-01-05 2012-01-05 Cellule photovoltaique et procede de realisation

Publications (2)

Publication Number Publication Date
WO2013102725A2 WO2013102725A2 (fr) 2013-07-11
WO2013102725A3 true WO2013102725A3 (fr) 2014-05-01

Family

ID=47714384

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2013/000006 Ceased WO2013102725A2 (fr) 2012-01-05 2013-01-03 Cellule photovoltaïque et procédé de réalisation

Country Status (6)

Country Link
US (1) US20140373919A1 (fr)
EP (1) EP2801116A2 (fr)
JP (1) JP2015506584A (fr)
KR (1) KR20140112537A (fr)
FR (1) FR2985608B1 (fr)
WO (1) WO2013102725A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107408599B (zh) * 2015-03-24 2020-11-27 松下知识产权经营株式会社 太阳能电池单元的制造方法
DE102015112046A1 (de) 2015-07-23 2017-01-26 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Herstellung einseitig angeordneter strukturierter Kontakte in einer Schichtanordnung für ein photovoltaisches Bauelement
EP3163632A1 (fr) 2015-11-02 2017-05-03 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Dispositif photovoltaïque et son procédé de fabrication
US10770505B2 (en) * 2017-04-05 2020-09-08 Intel Corporation Per-pixel performance improvement for combined visible and ultraviolet image sensor arrays
DE112020001695T5 (de) 2019-03-29 2021-12-16 Sunpower Corporation Solarzellen mit Hybridarchitekturen einschließlich abgegrenzter P- und N-Regionen mit versetzten Kontakten

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113750A1 (fr) * 2009-03-30 2010-10-07 三洋電機株式会社 Pile solaire
WO2011093329A1 (fr) * 2010-01-26 2011-08-04 三洋電機株式会社 Cellule solaire et procédé de fabrication de celle-ci

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10045249A1 (de) 2000-09-13 2002-04-04 Siemens Ag Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements
CN100431177C (zh) 2003-09-24 2008-11-05 三洋电机株式会社 光生伏打元件及其制造方法
JP5906393B2 (ja) * 2010-02-26 2016-04-20 パナソニックＩｐマネジメント株式会社 太陽電池及び太陽電池の製造方法
KR20130056364A (ko) * 2010-04-23 2013-05-29 솔렉셀, 인크. 고효율 태양 전지 극 저 표면 재결합 속도를 달성하기 위한 패시베이션 방법 및 장치
JP5485060B2 (ja) * 2010-07-28 2014-05-07 三洋電機株式会社 太陽電池の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113750A1 (fr) * 2009-03-30 2010-10-07 三洋電機株式会社 Pile solaire
WO2011093329A1 (fr) * 2010-01-26 2011-08-04 三洋電機株式会社 Cellule solaire et procédé de fabrication de celle-ci

Also Published As

Publication number Publication date
WO2013102725A2 (fr) 2013-07-11
KR20140112537A (ko) 2014-09-23
JP2015506584A (ja) 2015-03-02
FR2985608B1 (fr) 2016-11-18
US20140373919A1 (en) 2014-12-25
FR2985608A1 (fr) 2013-07-12
EP2801116A2 (fr) 2014-11-12

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