WO2013146573A1 - 導電性粒子、回路接続材料、実装体、及び実装体の製造方法 - Google Patents
導電性粒子、回路接続材料、実装体、及び実装体の製造方法 Download PDFInfo
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- WO2013146573A1 WO2013146573A1 PCT/JP2013/058250 JP2013058250W WO2013146573A1 WO 2013146573 A1 WO2013146573 A1 WO 2013146573A1 JP 2013058250 W JP2013058250 W JP 2013058250W WO 2013146573 A1 WO2013146573 A1 WO 2013146573A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/18—Non-metallic particles coated with metal
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0221—Insulating particles having an electrically conductive coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07332—Compression bonding, e.g. thermocompression bonding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/321—Structures or relative sizes of die-attach connectors
- H10W72/325—Die-attach connectors having a filler embedded in a matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12181—Composite powder [e.g., coated, etc.]
Definitions
- the present invention relates to conductive particles used for connection between electrodes, a circuit connection material containing the conductive particles, a mounting body using the circuit connection material, and a method for manufacturing the mounting body.
- TCP liquid crystal display and tape carrier package
- FPC Flexible Printed Circuit
- PWB printed wiring board
- a circuit connection material for example, anisotropic conductive film in which conductive particles are dispersed in a binder resin is used.
- flip chip mounting in which the semiconductor silicon chip is directly mounted on the substrate face down without using a wire bond to connect circuit members, is performed. It has been broken. Also in this flip chip mounting, a circuit connecting material is used for connection between circuit members.
- Patent Document 1 discloses conductive particles in which the surface of resin particles is subjected to silver plating and then gold plating is performed thereon.
- Patent Document 2 discloses conductive particles in which a surface layer made of silver or copper having a nickel layer on the surface of resin particles and having protrusions formed thereon is formed.
- Patent Document 3 discloses conductive particles in which the surface of a resin particle is plated with nickel, and a surface layer made of a nickel-palladium alloy layer having protrusions is formed thereon.
- Table 1 shows the specific resistance and Mohs hardness of the main metals used in electronic parts.
- the present invention has been proposed in view of such a conventional situation, and has low resistance and high reliability of conductive particles, a circuit connection material containing the conductive particles, and a mounting body using the circuit connection material And a method of manufacturing the mounting body.
- the inventors of the present invention have low resistance and high reliability by using conductive particles in which the surface is coated with hard nickel and the inside of the nickel layer is made of copper or silver having low specific resistance. It was found that it can be obtained.
- the conductive particles according to the present invention include a conductive layer made of copper or a copper alloy, or silver or a silver alloy, and a surface layer made of nickel or a nickel alloy formed on the conductive layer. To do.
- the circuit connection material according to the present invention includes a binder resin and conductive particles dispersed in the binder resin, and the conductive particles include copper or a copper alloy, or a conductive layer made of silver or a silver alloy. And a surface layer made of nickel or a nickel alloy formed on the conductive layer.
- the first electronic component and the second electronic component include a conductive layer made of copper or a copper alloy, or silver or a silver alloy, and nickel formed on the conductive layer, or It is electrically connected by conductive particles having a surface layer made of a nickel alloy.
- the method for manufacturing a mounting body according to the present invention includes a conductive layer made of copper or a copper alloy, or a silver or silver alloy, and a surface layer made of nickel or a nickel alloy formed on the conductive layer.
- a circuit connecting material in which particles are dispersed in a binder resin is pasted on the terminal of the first electronic component, a second electronic component is temporarily arranged on the circuit connecting material, and a heat pressing device is applied from above the second electronic component. And the terminal of the first electronic component is connected to the terminal of the second electronic component.
- low resistance and high reliability can be obtained by using conductive particles in which the surface is coated with hard nickel and the inside of the nickel layer is made of copper or silver having a low specific resistance.
- FIG. 1 is a cross-sectional view showing conductive particles to which the present invention is applied.
- FIG. 2 is a cross-sectional view showing a circuit connection material in the present embodiment.
- FIG. 3 is a cross-sectional view showing the mounting body in the present embodiment.
- FIG. 4 is a cross-sectional view showing conductive particles in a comparative example.
- FIG. 5 is a perspective view for explaining evaluation and measurement of the current resistance of the mounted body.
- FIG. 6 is a perspective view for explaining the evaluation and measurement of the corrosion resistance of the mounted body.
- the conductive particles according to the present invention have a conductive layer made of copper or a copper alloy, or silver or a silver alloy, and a surface layer made of nickel or a nickel alloy formed on the conductive layer.
- the conductive layer may be copper or copper alloy, or metal core particles made of silver or silver alloy, or may be a coating layer covering the surface of other metal core particles or resin core particles.
- FIG. 1 is a cross-sectional view showing an example of conductive particles to which the present invention is applied.
- the conductive particles 10 include resin particles 11, a conductive layer 12 made of copper or a copper alloy, or silver or a silver alloy, and a surface layer 13 made of nickel or a nickel alloy that covers the conductive layer 12.
- Resin particle 11 is a base material (core) particle of conductive particles, and a particle that does not cause changes such as breakage, melting, flow, decomposition, and carbonization during mounting is used.
- resin particles 11 include monofunctional vinyl compounds typified by (meth) acrylic acid esters such as ethylene, propylene, and styrene, diallyl phthalate, triallyl trimellitate, triallyl cyanurate, Copolymers with polyfunctional vinyl compounds such as divinylbenzene, di (meth) acrylate, tri (meth) acrylates, curable polyurethane resin, cured epoxy resin, phenol resin, benzoguanamine resin, melamine resin, polyamide, polyimide, silicone Examples thereof include resins, fluororesins, polyesters, polyphenylene sulfide resins, and polyphenylene ethers.
- Particularly desirable resin particles 11 are selected from physical properties such as elastic modulus at the time of thermocompression bonding and fracture strength, and are polystyrene resin, acrylate resin, benzoguanamine resin, and a copolymer of a monofunctional vinyl compound and a polyfunctional vinyl compound.
- the average particle diameter of the resin particles 11 is not particularly limited, but is preferably 1 to 20 ⁇ m. When the average particle size is less than 1 ⁇ m, for example, when electroless plating is performed, the particles tend to aggregate and hardly form single particles. On the other hand, if the average particle diameter exceeds 20 ⁇ m, the range used for fine pitch circuit boards as an anisotropic conductive material may be exceeded.
- the average particle diameter of the resin particles is obtained by measuring the particle diameters of 50 randomly selected base particles and arithmetically averaging them.
- the conductive layer 12 is, for example, a metal layer made of copper or a copper alloy, or silver or a silver alloy, which is coated by electroless plating. Copper or copper alloy or silver or silver alloy preferably has a copper or silver purity of 90% or more, and more preferably 95% or more.
- copper alloy for example, a Cu—Ni alloy, a Cu—Ag alloy, or the like can be used.
- silver alloy for example, an Ag—Bi alloy or the like can be used.
- the thickness of the conductive layer 12 is preferably 0.05 ⁇ m or more, and more preferably 0.10 ⁇ m or more. When the thickness is less than 0.05 ⁇ m, the resistance value of the conductive particles 10 is increased.
- the surface layer 13 is a metal layer made of nickel or a nickel alloy coated by, for example, electroless plating or sputtering.
- the nickel or nickel alloy preferably has a nickel purity of 90% or more, and more preferably 95% or more.
- As the nickel alloy for example, a Ni—P alloy, a Ni—B alloy, a Ni—Pd alloy, a Ni—Co alloy, or the like can be used.
- the thickness of the surface layer 13 is preferably 0.10 ⁇ m or more and 0.20 ⁇ m or less. If the thickness is less than 0.10 ⁇ m, hardness cannot be obtained and good reliability cannot be obtained. Moreover, corrosion resistance will also fall. On the other hand, when the thickness exceeds 0.2 ⁇ m, the resistance value of the conductive particles 10 becomes high.
- the surface layer 13 preferably has protrusions on the surface. Thereby, it becomes possible to break through the oxide film formed on the electrode surface, the resistance value can be lowered, and the reliability can be improved.
- a method for forming the protrusion for example, when the nickel film is formed by electroless plating, the nickel film and the fine particles serving as the core of the protrusion are simultaneously deposited, and the nickel film is formed while taking in the fine particles. .
- nickel, palladium, cobalt, chromium etc. are mentioned, for example.
- conductive particles 10 use resin particles 11 as base material particles, the particle size distribution is narrower than that of metal particles, and can correspond to fine pitch wiring. Moreover, since the resin particle 11 surface is coat
- IZO Indium Zinc Oxide
- ITO Indium Tin Oxide
- the circuit connection material in the present embodiment includes a binder resin and conductive particles dispersed in the binder resin.
- the conductive particles include a conductive layer made of copper or a copper alloy, or silver or a silver alloy, and a conductive layer. And a surface layer made of nickel or a nickel alloy formed thereon.
- the binder resin is not particularly limited, but more preferably contains a film-forming resin, a polymerizable resin, a curing agent, and a silane coupling agent.
- the film-forming resin corresponds to a high molecular weight resin having an average molecular weight of 10,000 or more, and preferably has an average molecular weight of about 10,000 to 80,000 from the viewpoint of film formation.
- various resins such as an epoxy resin, a modified epoxy resin, a urethane resin, and a phenoxy resin can be used.
- a phenoxy resin is preferably used from the viewpoint of the film formation state, connection reliability, and the like. .
- polymerizable resin a polymerizable compound such as an epoxy resin or an acrylic resin can be appropriately used.
- the epoxy resin is not particularly limited, and a commercially available epoxy resin can be used. Specific examples of such epoxy resins include naphthalene type epoxy resins, biphenyl type epoxy resins, phenol novolac type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, triphenolmethane type epoxy resins, phenol aralkyl type epoxy resins. Resins, naphthol type epoxy resins, dicyclopentadiene type epoxy resins, triphenylmethane type epoxy resins, and the like can be used. These may be used alone or in combination of two or more. Moreover, you may use it combining suitably with other organic resins, such as an acrylic resin.
- the acrylic resin is not particularly limited, and monofunctional (meth) acrylate and bifunctional or higher (meth) acrylate can be used.
- monofunctional (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, i-propyl (meth) acrylate, and n-butyl (meth) acrylate.
- Bifunctional or higher (meth) acrylates include bisphenol F-EO modified di (meth) acrylate, bisphenol A-EO modified di (meth) acrylate, trimethylolpropane PO modified (meth) acrylate, and multifunctional urethane (meth) acrylate. Etc. These (meth) acrylates may be used alone or in combination of two or more.
- the curing agent is not particularly limited and may be appropriately selected depending on the purpose.
- a latent curing agent that is activated by heating a latent curing agent that generates free radicals by heating, and the like can be used.
- a latent curing agent composed of imidazoles, amines, sulfonium salts, onium salts and the like can be used.
- a thermal radical generator such as an organic peroxide can be preferably used as an organic peroxide.
- organic peroxide examples include benzoyl peroxide, lauroyl peroxide, butyl peroxide, benzyl peroxide, dilauroyl peroxide, dibutyl peroxide, benzyl peroxide, and peroxydicarbonate.
- silane coupling agent epoxy, amino, mercapto sulfide, ureido, etc. can be used.
- an epoxy-type silane coupling agent is used preferably. Thereby, the adhesiveness in the interface of an organic material and an inorganic material can be improved.
- an inorganic filler as another additive composition.
- an inorganic filler silica, talc, titanium oxide, calcium carbonate, magnesium oxide, or the like can be used.
- a method for manufacturing the above-described circuit connecting material having conductive particles will be described.
- a coating step of applying a binder resin 21 composition in which conductive particles 10 are dispersed on a release substrate 22 and a composition on the release substrate 22 are dried.
- a drying step is a drying step.
- this composition is applied onto the release substrate using a bar coater, a coating device, or the like.
- the release substrate 22 is, for example, a laminated structure in which a release agent such as silicone is applied to PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), and the like. And maintain the film shape of the composition.
- a release agent such as silicone is applied to PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), and the like. And maintain the film shape of the composition.
- the composition on the release substrate 22 is dried by a heat oven, a heat drying apparatus, or the like. Thereby, the electroconductive adhesive film in which the circuit connection material was formed in the film form can be obtained.
- FIG. 3 is a cross-sectional view showing the mounting body in the present embodiment.
- the first electronic component 30 and the second electronic component 40 include a conductive layer made of copper or a copper alloy, or silver or a silver alloy, and nickel formed on the conductive layer. Or it is electrically connected by the electroconductive particle 10 which has the surface layer which consists of nickel alloys.
- Examples of the first electronic component 30 include a wiring material having a fine-pitch terminal 31 having a smooth surface, such as IZO (Indium / Zinc / Oxide) and non-crystalline ITO (Indium / Tin / Oxide).
- the second electronic component 40 may be an IC (Integrated Circuit) in which terminals 41 such as fine pitch bumps are formed.
- the mounting body in the present embodiment is connected with the conductive particles described above, a low-resistance, high-reliability connection is obtained, and excellent current resistance, storage stability, and corrosion resistance are obtained. Can do.
- the manufacturing method of the mounting body in the present embodiment includes a conductive particle 10 having a conductive layer made of copper or a copper alloy, or silver or a silver alloy, and a surface layer made of nickel or a nickel alloy formed on the conductive layer. Is bonded to the terminal 31 of the first electronic component 30, the second electronic component 40 is temporarily placed on the circuit connecting material, and the second electronic component 40 is heated from above. It is pressed by a pressing device to connect the terminal 31 of the first electronic component and the terminal 41 of the second electronic component.
- the mounting body manufacturing method in the present embodiment includes conductive particles having a surface layer made of nickel or a nickel alloy in the circuit connection material, so that the conductive particles are bitten into the metal wiring on which an oxide film is easily formed. And high reliability can be obtained. Further, even when a wiring material having a fine pitch terminal with a smooth surface such as IZO (Indium Zinc Oxide) or non-crystalline ITO (Indium Tin Oxide) is used, high reliability can be obtained.
- IZO Indium Zinc Oxide
- ITO Indium Tin Oxide
- Example> Examples of the present invention will be described below, but the present invention is not limited to these examples.
- conductive particles 10 of Examples 1 to 9 in which a conductive layer 12 and a surface layer 13 were formed in this order on a resin particle 11 were produced.
- conductive particles of Comparative Examples 1 to 3 in which a surface layer 52 was formed on a resin particle 51 were produced.
- the thickness of the conductive layer and the thickness of the surface layer were measured.
- anisotropic conductive films were produced as circuit connection materials using the conductive particles of Examples 1 to 9 and Comparative Examples 1 to 3. And the mounting body for connection resistance evaluation, reliability evaluation, and electric current resistance evaluation, and the mounting body for corrosion resistance evaluation were produced using each anisotropic conductive film.
- the thickness measurement of the conductive layer and the surface layer, the production of the anisotropic conductive film, the production of the mounting body, and each evaluation were performed as follows.
- an anisotropic conductive film slit to a width of 2.0 mm was attached to PWB (condition: 80 ° C.-1 MPa-1 sec), COF was aligned thereon, and then pressure bonding conditions 190 ° C.-3 MPa-10 sec, Crimping was performed with a buffer material 250 ⁇ mt silicon rubber and a 2.0 mm width heating tool to complete the mounting body.
- Each anisotropic conductive film was used to connect COF (evaluation substrate, 50 ⁇ mP, Cu8 ⁇ mt-Sn plating, 38 ⁇ mt-S'perflex substrate) and non-alkali glass (evaluation substrate, 0.7 mmt).
- COF evaluation substrate
- non-alkali glass evaluation substrate, 0.7 mmt.
- an anisotropic conductive film slit to 2.0 mm width is attached to non-alkaline glass (conditions: 80 ° C.-1 MPa-1 sec), COF is aligned thereon, and pressure bonding conditions are 190 ° C.-3 MPa-
- the mounting body was completed by pressure bonding for 10 seconds with a buffer material of 250 ⁇ mt silicon rubber and a 2.0 mm width heating tool.
- connection resistance and reliability Each mounted body was measured for a conduction resistance value when a current of 1 mA was passed by a four-terminal method using a digital multimeter (product number: digital multimeter 7555, manufactured by Yokogawa Electric Corporation).
- connection resistance was evaluated using the initial conduction resistance value.
- the conduction resistance value was evaluated as ⁇ when the resistance was 0.2 ⁇ or less, ⁇ when more than 0.2 ⁇ and less than 0.5 ⁇ , and ⁇ when 0.5 ⁇ or more.
- Thermal Humidity Test was evaluated using the conduction resistance value after a TH test (Thermal Humidity Test) at a temperature of 85 ° C. and a humidity of 85% RH for 500 hours.
- the conduction resistance value was evaluated as ⁇ when the resistance was 0.2 ⁇ or less, ⁇ when more than 0.2 ⁇ and less than 0.5 ⁇ , and ⁇ when 0.5 ⁇ or more.
- each mounted body was subjected to VI measurement to evaluate current characteristics.
- a PWB conductor pattern 62 formed on the PWB 61 and a COF conductor pattern 64 formed on the COF are connected via an anisotropic conductive film 63.
- a VI characteristic was evaluated by applying a current of 10 mA / sec between the PWB conductor pattern 62 and the COF conductor pattern 64.
- the current resistance deviating from the straight line (proportional relationship) was measured by VI measurement to evaluate the current resistance.
- a current value of 500 mA or more was evaluated as ⁇ , and a current value of 200 mA or more and less than 500 mA was evaluated as ⁇ .
- Example 1 The surface of the resin core was subjected to Ag plating as a conductive layer, and Ni plating was applied as a surface layer thereon to produce conductive particles.
- the thickness of the conductive layer was 0.10 ⁇ m, and the thickness of the surface layer was 0.10 ⁇ m.
- An anisotropic conductive film containing the conductive particles is produced, and a mounting body is produced using the anisotropic conductive film. As described above, the connection resistance, reliability, current resistance, storage stability, and resistance Corrosivity was evaluated.
- Table 2 shows the evaluation results of Example 1.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 2 Conductive particles were prepared and evaluated in the same manner as in Example 1 except that the thickness of the conductive layer was 0.15 ⁇ m.
- Table 2 shows the evaluation results of Example 2.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 3 Conductive particles were produced and evaluated in the same manner as in Example 1 except that the thickness of the conductive layer was 0.20 ⁇ m.
- Table 2 shows the evaluation results of Example 3.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 4 Conductive particles were produced and evaluated in the same manner as in Example 1 except that Cu plating was applied as the conductive layer and the thickness of the conductive layer was 0.07 ⁇ m.
- Table 2 shows the evaluation results of Example 4.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 5 Conductive particles were produced and evaluated in the same manner as in Example 1 except that Cu plating was applied as the conductive layer and the thickness of the conductive layer was 0.10 ⁇ m.
- Table 2 shows the evaluation results of Example 5.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 6 Conductive particles were produced and evaluated in the same manner as in Example 1 except that Cu plating was applied as the conductive layer and the thickness of the conductive layer was 0.15 ⁇ m.
- Table 2 shows the evaluation results of Example 6.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 7 Conductive particles were produced and evaluated in the same manner as in Example 1 except that Cu plating was applied as the conductive layer and the thickness of the conductive layer was 0.20 ⁇ m.
- Table 2 shows the evaluation results of Example 7.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 8 Conductive particles were produced and evaluated in the same manner as in Example 1 except that Cu plating was applied as the conductive layer, the thickness of the conductive layer was 0.10 ⁇ m, and the thickness of the surface layer was 0.20 ⁇ m. .
- Table 2 shows the evaluation results of Example 8.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 9 Conductive particles were prepared and evaluated in the same manner as in Example 1 except that Cu plating was applied as the conductive layer and protrusions were formed on the surface layer.
- Table 2 shows the evaluation results of Example 9.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 1 Evaluation was performed in the same manner as in Example 1 except that the surface of the resin core was subjected to Ag plating with a thickness of 0.10 ⁇ m as a surface layer to produce conductive particles.
- Table 2 shows the evaluation results of Comparative Example 1.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 2 Evaluation was performed in the same manner as in Example 1 except that the surface of the resin core was subjected to Cu plating with a thickness of 0.10 ⁇ m as a surface layer to produce conductive particles.
- Table 2 shows the evaluation results of Comparative Example 2.
- the connection resistance was ⁇
- the reliability was ⁇
- the current resistance was ⁇
- the storage stability was ⁇
- the corrosion resistance was ⁇ .
- Example 3 Evaluation was performed in the same manner as in Example 1 except that Ni plating having a thickness of 0.10 ⁇ m was applied to the surface of the resin core as a surface layer to produce conductive particles.
- Table 2 shows the evaluation results of Comparative Example 3.
- the connection resistance was x to ⁇ , the reliability was x, the current resistance was ⁇ , the storage stability was ⁇ , and the corrosion resistance was ⁇ .
- Comparative Examples 1 and 2 when conductive particles having only the surface layer of Ag or Cu were used without forming a conductive layer, storage stability and corrosion resistance were inferior. Since Comparative Example 3 is a conductive particle having only a Ni surface layer without forming a conductive layer, the storage stability and corrosion resistance are good, but the connection resistance, reliability, and current resistance characteristics are slightly higher. The result was inferior.
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Abstract
Description
本出願は、日本国において2012年3月29日に出願された日本特許出願番号特願2012-76919を基礎として優先権を主張するものであり、この出願を参照することにより、本出願に援用される。
1.導電性粒子
2.回路接続材料
3.実装体及び実装体の製造方法
4.実施例
本発明に係る導電性粒子は、銅若しくは銅合金、又は銀若しくは銀合金からなる導電層と、導電層上に形成されたニッケル又はニッケル合金からなる表面層とを有する。導電層は、銅若しくは銅合金、又は銀若しくは銀合金からなる金属コア粒子であってもよく、他の金属コア粒子又は樹脂コア粒子の表面を被覆した被覆層であってもよい。
本実施の形態における回路接続材料は、バインダー樹脂と、バインダー樹脂に分散された導電性粒子とを備え、導電性粒子は、銅若しくは銅合金、又は銀若しくは銀合金からなる導電層と、導電層上に形成されたニッケル又はニッケル合金からなる表面層とを有する。バインダー樹脂は、特に制限されないが、より好ましくは、膜形成樹脂と、重合性樹脂と、硬化剤と、シランカップリング剤とを含有する。
図3は、本実施の形態における実装体を示す断面図である。本実施の形態における実装体は、第1の電子部品30と第2の電子部品40とが、銅若しくは銅合金、又は銀若しくは銀合金からなる導電層と、前記導電層上に形成されたニッケル又はニッケル合金からなる表面層とを有する導電性粒子10によって電気的に接続されてなるものである。
以下、本発明の実施例について説明するが、本発明はこれらの実施例に限定されるものではない。
エポキシ接着剤に導電性粒子を分散させて硬化させ、研磨機(丸本ストルアス社製)にて粒子断面を削り出した。この粒子断面をSEM(Scanning Electron Microscope)(キーエンス社製、VE-8800)にて観察し、導電層の厚さ及び表面層の厚さを測定した。
マイクロカプセル型アミン系硬化剤(旭化成ケミカルズ社製、商品名ノバキュアHX3941HP)50部、液状エポキシ樹脂(ジャパンエポキシレジン社製、商品名EP828)14部、フェノキシ樹脂(東都化成社製、商品名YP50)35部、及びシランカップリング剤(信越化学社製、商品名KBE403)1部を含む熱硬化性バインダー樹脂に、実施例及び比較例の導電性粒子を体積比率10%になるように分散させた。この接着剤組成物を、シリコーン処理された剥離PETフィルム上に厚み35μmになるように塗布し、シート状の異方性導電フィルムを作製した。
各異方性導電フィルムを用いてCOF(評価用基材、200μmP、Cu8μmt-Snめっき、38μmt-S'perflex基材)とPWB(評価用基材、200μmP、Cu35μmt-Auめっき、FR-4基材)の接続を行なった。先ず、2.0mm幅にスリットされた異方性導電フィルムをPWBに貼り付け(条件:80℃-1MPa-1sec)、その上にCOFを位置あわせした後、圧着条件190℃-3MPa-10sec、緩衝材250μmtシリコンラバー、2.0mm幅加熱ツールにて圧着を行い、実装体を完成させた。
各異方性導電フィルムを用いてCOF(評価用基材、50μmP、Cu8μmt-Snめっき、38μmt-S'perflex基材)とノンアルカリガラス(評価用基材、0.7mmt)の接続を行なった。先ず、2.0mm幅にスリットされた異方性導電フィルムをノンアルカリガラスに貼り付け(条件:80℃-1MPa-1sec)、その上にCOFを位置あわせした後、圧着条件190℃-3MPa-10sec、緩衝材250μmtシリコンラバー、2.0mm幅加熱ツールにて圧着を行い、実装体を完成させた。
各実装体についてデジタルマルチメータ(品番:デジタルマルチメータ7555、横河電機社製)を用いて4端子法にて電流1mAを流したときの導通抵抗値の測定をおこなった。
図5に示すように、各実装体について、V-I測定を行い電流特性の評価を実施した。実装体は、PWB61に形成されたPWB導体パターン62と、COFに形成されたCOF導体パターン64とが異方性導電フィルム63を介して接続されている。PWB導体パターン62とCOF導体パターン64との間に、10mA/secで電流をかけていき、V-I特性評価を行った。V-I測定で直線(比例関係)から外れる電流値を読み取り耐電流性を評価した。電流値が500mA以上を○、及び200mA以上500mA未満を△と評価した。
各導電性粒子を小瓶にとりわけ、開放状態で常温環境中に1ヶ月放置し、目視により、導電性粒子の変色状態の確認を行った。変色が無かったものを○、変色が有ったものを×と評価した。
図6に示すように、ノンアルカリガラス71とCOFとが異方性導電フィルム74で接着された実装体において、隣接するCOF端子72、73間に電圧DC50Vを印加し、温度60℃、湿度95%のオーブンで環境試験を行った。500h後に顕微鏡にて腐食(マイグレーション)の確認を行った。マイグレーションの発生が無かったものを○、マイグレーションの発生が有ったものを×と評価した。
樹脂コアの表面に導電層としてAgめっきを施し、その上に表面層としてNiめっきを施し、導電性粒子を作製した。導電層の厚みは0.10μmであり、表面層の厚みは0.10μmであった。この導電性粒子を含有する異方性導電フィルムを作製し、さらに異方性導電フィルム用いて実装体を作製し、上述のように接続抵抗、信頼性、耐電流性、保存安定性、及び耐腐食性を評価した。
導電層の厚みが0.15μmであった以外は、実施例1と同様に導電性粒子を作製し、評価を行った。
導電層の厚みが0.20μmであった以外は、実施例1と同様に導電性粒子を作製し、評価を行った。
導電層としてCuめっきを施し、導電層の厚みが0.07μmであった以外は、実施例1と同様に導電性粒子を作製し、評価を行った。
導電層としてCuめっきを施し、導電層の厚みが0.10μmであった以外は、実施例1と同様に導電性粒子を作製し、評価を行った。
導電層としてCuめっきを施し、導電層の厚みが0.15μmであった以外は、実施例1と同様に導電性粒子を作製し、評価を行った。
導電層としてCuめっきを施し、導電層の厚みが0.20μmであった以外は、実施例1と同様に導電性粒子を作製し、評価を行った。
導電層としてCuめっきを施し、導電層の厚みが0.10μmであり、表面層の厚みが0.20μmであった以外は、実施例1と同様に導電性粒子を作製し、評価を行った。
導電層としてCuめっきを施し、表面層に突起を形成した以外は、実施例1と同様に導電性粒子を作製し、評価を行った。
樹脂コアの表面に表面層として厚み0.10μmのAgめっきを施し、導電性粒子を作製した以外は、実施例1と同様に評価を行った。
樹脂コアの表面に表面層として厚み0.10μmのCuめっきを施し、導電性粒子を作製した以外は、実施例1と同様に評価を行った。
樹脂コアの表面に表面層として厚み0.10μmのNiめっきを施し、導電性粒子を作製した以外は、実施例1と同様に評価を行った。
Claims (8)
- 銅若しくは銅合金、又は銀若しくは銀合金からなる導電層と、
前記導電層上に形成されたニッケル又はニッケル合金からなる表面層と
を有する導電性粒子。 - 樹脂粒子を有し、
前記導電層は、前記樹脂粒子表面を被覆する請求項1記載の導電性粒子。 - 前記導電層の厚みが0.10μm以上である請求項1又は2記載の導電性粒子。
- 前記表面層の厚みが0.10μm以上0.20μm以下である請求項1に記載の導電性粒子。
- 前記表面層は、突起を有する請求項1に記載の導電性粒子。
- バインダー樹脂と、前記バインダー樹脂に分散された導電性粒子とを備え、
前記導電性粒子は、銅若しくは銅合金、又は銀若しくは銀合金からなる導電層と、前記導電層上に形成されたニッケル又はニッケル合金からなる表面層とを有する回路接続材料。 - 第1の電子部品と第2の電子部品とが、銅若しくは銅合金、又は銀若しくは銀合金からなる導電層と、前記導電層上に形成されたニッケル又はニッケル合金からなる表面層とを有する導電性粒子によって電気的に接続されてなる実装体。
- 銅若しくは銅合金、又は銀若しくは銀合金からなる導電層と、前記導電層上に形成されたニッケル又はニッケル合金からなる表面層とを有する導電性粒子がバインダー樹脂に分散された回路接続材料を第1の電子部品の端子上に貼付け、
前記回路接続材料上に第2の電子部品を仮配置させ、
前記第2の電子部品上から加熱押圧装置により押圧し、前記第1の電子部品の端子と、前記第2の電子部品の端子とを接続させる実装体の製造方法。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/386,707 US20150047878A1 (en) | 2012-03-29 | 2013-03-22 | Electroconductive particle, circuit connecting material, mounting body, and method for manufacturing mounting body |
| KR1020147029435A KR102028389B1 (ko) | 2012-03-29 | 2013-03-22 | 도전성 입자, 회로 접속 재료, 실장체, 및 실장체의 제조 방법 |
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| JP2012076919A JP6245792B2 (ja) | 2012-03-29 | 2012-03-29 | 導電性粒子、回路接続材料、実装体、及び実装体の製造方法 |
| JP2012-076919 | 2012-03-29 |
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| JP2015118931A (ja) * | 2013-11-18 | 2015-06-25 | 積水化学工業株式会社 | 導電性粒子、導電材料及び接続構造体 |
| JP2015118932A (ja) * | 2013-11-18 | 2015-06-25 | 積水化学工業株式会社 | 導電性粒子、導電材料及び接続構造体 |
| JP2015118933A (ja) * | 2013-11-18 | 2015-06-25 | 積水化学工業株式会社 | 導電性粒子、導電材料及び接続構造体 |
| WO2015108025A1 (ja) * | 2014-01-16 | 2015-07-23 | デクセリアルズ株式会社 | 接続体、接続体の製造方法、接続方法、異方性導電接着剤 |
| KR20170073650A (ko) * | 2014-10-24 | 2017-06-28 | 히다찌긴조꾸가부시끼가이사 | 도전성 입자, 도전성 분체, 도전성 고분자 조성물 및 이방성 도전 시트 |
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| JP6149683B2 (ja) * | 2013-10-18 | 2017-06-21 | 日立化成株式会社 | フィルム状回路接続材料及びこれを用いた接続構造体 |
| KR20160046977A (ko) * | 2014-10-20 | 2016-05-02 | 삼성디스플레이 주식회사 | 이방성 도전입자 |
| JP6661969B2 (ja) | 2014-10-28 | 2020-03-11 | デクセリアルズ株式会社 | 異方性導電フィルム及び接続構造体 |
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| WO2023058796A1 (ko) * | 2021-10-08 | 2023-04-13 | 주식회사 씨앤씨머티리얼즈 | 내식성이 우수한 전도성 폴리머 입자 |
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| JP2007184115A (ja) * | 2006-01-04 | 2007-07-19 | Noge Denki Kogyo:Kk | 導電性微粒子の製造方法 |
| JP2009224059A (ja) * | 2008-03-13 | 2009-10-01 | Sekisui Chem Co Ltd | 導電性微粒子、異方性導電材料、及び、接続構造体 |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2013206823A (ja) | 2013-10-07 |
| KR102028389B1 (ko) | 2019-10-04 |
| US20150047878A1 (en) | 2015-02-19 |
| JP6245792B2 (ja) | 2017-12-13 |
| KR20140139022A (ko) | 2014-12-04 |
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