WO2013178824A1 - Suscepteur - Google Patents

Suscepteur Download PDF

Info

Publication number
WO2013178824A1
WO2013178824A1 PCT/EP2013/061384 EP2013061384W WO2013178824A1 WO 2013178824 A1 WO2013178824 A1 WO 2013178824A1 EP 2013061384 W EP2013061384 W EP 2013061384W WO 2013178824 A1 WO2013178824 A1 WO 2013178824A1
Authority
WO
WIPO (PCT)
Prior art keywords
susceptor
modules
susceptor according
end faces
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2013/061384
Other languages
German (de)
English (en)
Inventor
Torsten Kornmeyer
Meinhard Wisskirchen
Steffen Still
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KGT Graphit Technologie GmbH
Original Assignee
KGT Graphit Technologie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KGT Graphit Technologie GmbH filed Critical KGT Graphit Technologie GmbH
Priority to US14/404,948 priority Critical patent/US10094016B2/en
Priority to EP13727130.0A priority patent/EP2856498B1/fr
Priority to CN201380028573.9A priority patent/CN104380451B/zh
Priority to PL13727130T priority patent/PL2856498T3/pl
Priority to DK13727130.0T priority patent/DK2856498T3/en
Publication of WO2013178824A1 publication Critical patent/WO2013178824A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/19—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
    • H10P72/1922—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by the construction of the closed carrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00—Means for manipulating or holding work, e.g. for separate articles
    • B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles

Definitions

  • the invention relates to a susceptor made of graphite or CFC for the process chamber of inert gas and vacuum high temperature ⁇ tur-process equipment, which is tunnel-like and is closed at its two ends in each case with a lid.
  • Susceptors are components which are located in the immediate process area and either for
  • the susceptors rest on a support structure also made of graphite or CFC (CFC: carbon fiber composites CFC materials are carbon fiber composites for high temperature applications) e.g. in an oven.
  • CFC carbon fiber composites
  • CFC materials are carbon fiber composites for high temperature applications
  • Susceptors are closed at both ends by a graphite cover, which are usually attached to the oven doors and Osomit can be easily opened and closed.
  • thermographic grating system An example of a profiled susceptor for receiving semiconductor wafers in a thermographic grating system can be found in EP 1 590 510 Bl.
  • Susceptors are used in vacuum process equipment used to manufacture and process components
  • the components are acted upon by a gas pressure and high temperatures.
  • the serve Susceptors delimiting the process space from the insulation or other furnace components, so that they are protected from excessive temperature load or stress
  • Susceptor seen in cross-section corresponds to a flattened tube, or tunnel-like, this leads to the problem that, if necessary, different ingots or even different raw materials must be used for the manufacture of the components.
  • the invention is based on the object to provide a flexible modular expandable susceptor, the one
  • a susceptor of the type mentioned in that this consists of a plurality of longitudinally aligned to a continuous tunnel modules, that each module consists of a pipe section and a bottom plate attached thereto and that the end faces between each two modules are positively connected to each other.
  • susceptors can be assembled with any length and that the individual modules can be made of smallest possible blanks, which in turn has a high
  • each pipe section is bolted to the associated base plate.
  • the positive connection between abutting modules by means of profiled end faces, wherein one end face has the negative shape of the other end face. Due to the profiling of the end faces they have a larger area than flat end faces, which ensures a good seal between adjacent modules.
  • Modules additionally positively and non-positively connected.
  • the bottom plates of adjacent modules are provided with recesses extending from module to module, engage flush with the connecting elements form fit.
  • a connecting element may be a double-T-spring-groove connecting element with semicircular cross-section.
  • each module can also consist of two or more segments, which also has the advantage of
  • modules which can be aligned with one another may have the same or different lengths, thereby enabling a fine graduation of the achievable length of the susceptor, combined with a simplification of the storage.
  • the modules can also be firmly bonded together by gluing with a graphite cement or a graphite adhesive.
  • Fig. 1 a composite of individual modules
  • Susceptor with flattened tube cross section consisting of several pieces of pipe, which are each provided with a bottom plate;
  • Fig. 2 an enlarged perspective view of a
  • Fig. 4 a connecting element for a tongue and groove connection.
  • Fig. 1 shows a composite of individual modules 2 susceptor 1 with flattened pipe cross-section, each module 2 consists of a pipe section 3, which is provided with a bottom plate 4.
  • the bottom plate 4 is screwed to the pipe section 3.
  • the end faces 5 between two modules are profiled (Fig. 2), so that the components can be positively joined together by a fit.
  • the end faces can for example be designed so that an end face 5, the negative mold of the
  • Holes are provided, engage in the pins for the positive connection of adjacent modules.
  • the pins are also made of graphite or CFC.
  • Susceptors 1 the graphite cover should be movable or spring-loaded movable, eg hung on an oven door. Furthermore, force-fitting and form-fitting connection ⁇ elements may be provided together 6 (Fig. 4) for the firm connection of the modules 2, in the corresponding comparison recesses 9 in the bottom plates 4 flush engage (Fig. 3). Fig. 4 shows such a connecting element 6 in the form of a double T-tongue and groove connecting element with semicircular cross-section.
  • the tightness of the joints can be increased by introducing foil or graphite cord seals, or by gluing with a graphite cement or a graphite adhesive. This is achieved at the same time that the susceptor behaves like a one-piece manufactured total susceptor. All components of the susceptor 1 are made of graphite or CFC.
  • the susceptors 1 are assembled from modules 2 having different widths, a multiplicity of different tube lengths of the susceptor can be realized in a simple manner. Thus, it is sufficient to stockpile a certain number of modules 2 of different widths for the production of the susceptors 1, and nevertheless it is possible to respond quickly to different customer requirements. This greatly simplifies warehousing. Especially with larger susceptors, it may be advantageous if the pipe sections 3 are divided into several segments 10 (FIG. 3). This has the advantage that susceptors with a large interior space can be manufactured from comparatively small blanks. Again, here are
  • profiled end faces provided in order to connect the items form-fitting manner with each other.
  • front surfaces frictionally
  • Connecting elements 6 can be realized.
  • the size of the individual parts of a module 2 should be chosen so that they can be made from the same blank. This ensures that the thermal expansion for individual parts of each module 2 is the same and thus ensures that the entire susceptor 1 expands uniformly in length. Thus, the tightness of the joints and the faces to the doors or covers is guaranteed at all times.
  • 2 supply and disposal openings 7 may be provided for media in some modules. From Fig. 1 it can be seen that the respective outer modules 2 are provided with such openings 7.
  • susceptors 1 with other cross-sectional shapes e.g. also rectangular, in the same manner as described above, be assembled.
  • the invention provides a flexible, modular and

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Gasket Seals (AREA)
  • Ceramic Products (AREA)

Abstract

L'invention concerne un suscepteur graphite ou CFC destiné au local de processus d'installations de traitement haute température sous vide ou sous gaz protecteurs. Ce suscepteur se présente sous une forme de type tunnel et peut être fermé par un couvercle en chacune de ses extrémités. L'objectif de l'invention est de créer un suscepteur pouvant être agrandi de manière flexible et modulaire, qui possède une structure économe de la matière et qui présente plus particulièrement une dilatation thermique homogène. Cet objectif est atteint par le fait que le suscepteur (1) se compose d'une pluralité de modules (2) juxtaposés en longueur pour former un tunnel continu, que chaque module (2) se compose d'un tronçon tubulaire (3) et d'une plaque de base (4) qui y est fixée et que les faces frontales (5) sont reliées entre elles par complémentarité de forme entre respectivement deux modules (2).
PCT/EP2013/061384 2012-06-01 2013-06-03 Suscepteur Ceased WO2013178824A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US14/404,948 US10094016B2 (en) 2012-06-01 2013-06-03 Modular tubular susceptor
EP13727130.0A EP2856498B1 (fr) 2012-06-01 2013-06-03 Suscepteur
CN201380028573.9A CN104380451B (zh) 2012-06-01 2013-06-03 基座
PL13727130T PL2856498T3 (pl) 2012-06-01 2013-06-03 Susceptor
DK13727130.0T DK2856498T3 (en) 2012-06-01 2013-06-03 SUSCEPTOR

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012209278.1 2012-06-01
DE102012209278.1A DE102012209278B4 (de) 2012-06-01 2012-06-01 Suszeptor

Publications (1)

Publication Number Publication Date
WO2013178824A1 true WO2013178824A1 (fr) 2013-12-05

Family

ID=48577008

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/061384 Ceased WO2013178824A1 (fr) 2012-06-01 2013-06-03 Suscepteur

Country Status (7)

Country Link
US (1) US10094016B2 (fr)
EP (1) EP2856498B1 (fr)
CN (1) CN104380451B (fr)
DE (1) DE102012209278B4 (fr)
DK (1) DK2856498T3 (fr)
PL (1) PL2856498T3 (fr)
WO (1) WO2013178824A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3106811A1 (fr) * 2015-06-16 2016-12-21 Graphite Materials GmbH Sucepteur

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155528A (en) * 1980-05-02 1981-12-01 Toshiba Corp Method of diffusing impurity into semiconductor substrate
JPH01123991A (ja) * 1987-11-09 1989-05-16 Nikkiso Co Ltd 内熱式高温高圧装置の断熱構造体
US5912080A (en) * 1993-03-30 1999-06-15 Union Oil Company Of California, Dba Unocal Shaped graphite elements fabricated from thin graphite sheets
US20020017013A1 (en) * 2000-08-14 2002-02-14 Petruccelli Daniel G. Mini-modual manufacturing environmental
EP1590510B1 (fr) 2003-01-20 2007-03-28 HTM Reetz GmbH Dispositif pour realiser des passages electriquement conducteurs dans une tranche de semi-conducteur, au moyen d'une migration thermique
US20070128569A1 (en) * 2005-12-07 2007-06-07 Ajax Tocco Magnethermic Corporation Furnace alignment system

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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155528A (en) * 1980-05-02 1981-12-01 Toshiba Corp Method of diffusing impurity into semiconductor substrate
JPH01123991A (ja) * 1987-11-09 1989-05-16 Nikkiso Co Ltd 内熱式高温高圧装置の断熱構造体
US5912080A (en) * 1993-03-30 1999-06-15 Union Oil Company Of California, Dba Unocal Shaped graphite elements fabricated from thin graphite sheets
US20020017013A1 (en) * 2000-08-14 2002-02-14 Petruccelli Daniel G. Mini-modual manufacturing environmental
EP1590510B1 (fr) 2003-01-20 2007-03-28 HTM Reetz GmbH Dispositif pour realiser des passages electriquement conducteurs dans une tranche de semi-conducteur, au moyen d'une migration thermique
US20070128569A1 (en) * 2005-12-07 2007-06-07 Ajax Tocco Magnethermic Corporation Furnace alignment system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3106811A1 (fr) * 2015-06-16 2016-12-21 Graphite Materials GmbH Sucepteur

Also Published As

Publication number Publication date
DK2856498T3 (en) 2019-03-18
EP2856498B1 (fr) 2018-11-14
CN104380451A (zh) 2015-02-25
EP2856498A1 (fr) 2015-04-08
CN104380451B (zh) 2017-06-06
DE102012209278B4 (de) 2018-04-12
US10094016B2 (en) 2018-10-09
US20150144057A1 (en) 2015-05-28
DE102012209278A1 (de) 2013-12-05
PL2856498T3 (pl) 2019-05-31

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