WO2014200011A1 - Résistance et dispositif de détection de température - Google Patents

Résistance et dispositif de détection de température Download PDF

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Publication number
WO2014200011A1
WO2014200011A1 PCT/JP2014/065426 JP2014065426W WO2014200011A1 WO 2014200011 A1 WO2014200011 A1 WO 2014200011A1 JP 2014065426 W JP2014065426 W JP 2014065426W WO 2014200011 A1 WO2014200011 A1 WO 2014200011A1
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WO
WIPO (PCT)
Prior art keywords
resistor
carbon
boron
carbon material
temperature
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Ceased
Application number
PCT/JP2014/065426
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English (en)
Japanese (ja)
Inventor
小野　泰一
阿部　宗光
豪 鈴木
勝久 長田
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Alps Alpine Co Ltd
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Alps Electric Co Ltd
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Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Publication of WO2014200011A1 publication Critical patent/WO2014200011A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits or green body
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits or green body characterised by the resistive component
    • H01C17/0652—Precursor compositions therefor, e.g. pastes, inks, glass frits or green body characterised by the resistive component containing carbon or carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature

Definitions

  • the present invention relates to a resistor having boron-containing carbon and a temperature detection device.
  • Patent Document 1 discloses an invention related to an overheat detection temperature sensor with a fuse function in which a thick film PTC resistor and a thick film fuse are formed on a single substrate.
  • the thick film PTC resistor has a resin and carbon (such as the [0019] column in Patent Document 1).
  • the resistor described in Patent Document 1 has a temperature coefficient (temperature resistance characteristic) ([0021] column, [0032] column of Patent Document 1).
  • Patent Document 1 does not describe anything about the method of adjusting the temperature coefficient. Further, Patent Document 1 does not describe means for fixing a resistor containing carbon to a fixed resistance.
  • the resistor used in the temperature sensor has a temperature coefficient, and the temperature can be detected by measuring the resistance value of the resistor.
  • the resin swells / shrinks as the humidity changes, there is a problem that resistance noise occurs, resulting in detection errors.
  • the present invention is for solving the above-described conventional problems, and in particular, an object of the present invention is to provide a resistor capable of setting the temperature coefficient to zero.
  • Another object of the present invention is to provide a temperature detection device capable of canceling resistance noise and improving detection accuracy.
  • the resistor of the present invention includes a boron-treated first carbon material and a non-boron-treated second carbon material, and the first carbon material so that the temperature coefficient of resistance change is substantially zero.
  • the mixing ratio with the second carbon material is adjusted.
  • the first carbon material includes the first carbon material that has been treated with boron, the second carbon material that has not been treated with boron, and the resin material, and the temperature coefficient of resistance change is substantially zero, The mixing ratio of the second carbon material and the resin material is adjusted.
  • boron-treated first carbon material wherein the boron content is adjusted such that the temperature coefficient of resistance change is substantially zero.
  • the resistor of the present invention includes a boron-treated first carbon material and a resin material, and the boron content is adjusted so that the temperature coefficient of resistance change is substantially zero. It is a feature.
  • “Substantially 0” in this specification includes not only the case where it is actually 0, but also a measurement error and a slight deviation from 0 (absolute value of 50 ppm / ° C. or less).
  • the boron-containing carbon (first carbon material) and the second carbon material are mixed, the boron-containing carbon (first carbon material) and the second carbon material not subjected to boron treatment
  • the sign of each temperature coefficient can be reversed. Therefore, by mixing the first carbon material and the second carbon material, the temperature coefficient can be made substantially zero easily and appropriately.
  • the material of the first carbon material before boron treatment is composed of one or more of carbon nanotubes, carbon black, graphite, graphitized carbon fiber, carbon nanohorn, and carbon nanofilament. It is preferable.
  • the second carbon material is preferably composed of at least one of carbon nanotubes, carbon black, graphite, graphitized carbon fiber, carbon nanohorn, and carbon nanofilament.
  • the second carbon material may be formed by baking a resin material.
  • the resistor of the present invention is formed in a predetermined pattern on the surface of the substrate and fixed on the surface of the substrate by the resin material.
  • the glass material is deposited in a predetermined pattern on the surface of the substrate, and the glass material is baked and fixed on the surface of the substrate. Or it is enclosed inside the glass material.
  • the temperature detection device of the present invention includes a first resistor composed of the resistor described in any one of the above, and a second resistor having an absolute value of a temperature coefficient substantially larger than zero. The temperature is detected based on a difference in resistance value between the first resistor and the second resistor.
  • the temperature detection device of the present invention includes a first resistor containing a boron-treated first carbon material, and a second resistor having an absolute value of a temperature coefficient larger than that of the first resistor. It is provided, and temperature is detected based on a difference in resistance value between the first resistor and the second resistor.
  • the first resistor may be configured to include a second carbon material that has not been treated with boron.
  • the second resistor can be configured to include at least one of a boron-treated first carbon material and a boron-treated second carbon material.
  • the present invention it is possible to cancel a resistance noise due to humidity or the like, and to provide a temperature detection device excellent in detection accuracy.
  • the resistor of the present invention contains boron-containing carbon obtained by boron treatment on a carbon material, and the temperature coefficient can be made substantially zero.
  • thermoelectric device of the present invention resistance noise due to humidity or the like can be canceled, and detection accuracy can be improved as compared with the conventional case.
  • FIG.1 (a) is a top view of the temperature detection apparatus provided with the resistor in this embodiment
  • FIG.1 (b) (c) is a circuit diagram of a temperature detection apparatus.
  • FIG. 2 is a schematic diagram showing materials used for manufacturing the resistor.
  • FIG. 3A is a graph showing the relationship between the temperature and the resistance value of the carbon nanotube
  • FIG. 3B is a graph showing the relationship between the temperature and the resistance value of the boron-treated carbon nanotube.
  • FIG. 4 is a graph showing the relationship between the temperature and resistance value of carbon obtained by mixing boron-treated carbon nanotubes and carbon nanotubes (without boron treatment), and the relationship between the temperature and resistance value of boron-treated carbon nanotubes. .
  • FIG. 1 is a top view of the temperature detection apparatus provided with the resistor in this embodiment
  • FIG.1 (b) (c) is a circuit diagram of a temperature detection apparatus.
  • FIG. 2 is a schematic diagram showing materials used for manufacturing the resistor.
  • FIG. 5 is a sectional view showing a resistor according to another embodiment of the present invention.
  • FIG. 6A shows the change in resistance value with respect to the temperature of the graphitized carbon fiber not treated with boron
  • FIG. 6B shows the change in resistance value with respect to the temperature of the graphitized carbon fiber treated with boron. It is a graph.
  • FIG. 7A shows a change in resistance value with respect to the temperature of carbon black not subjected to boron treatment
  • FIG. 7B is a graph showing a change in resistance value with respect to temperature of carbon black subjected to boron treatment.
  • FIG. 8A shows a change in resistance value with respect to the temperature of carbon black not treated with boron
  • FIG. 8B is a graph showing a change in resistance value with respect to temperature of carbon black treated with boron.
  • the temperature detection device 1 shown in FIG. 1A has a configuration in which a first resistor 3 and a second resistor 4 are printed on the surface of a substrate 2 such as a flexible substrate or a hard substrate.
  • the temperature detection device 1 is used as a means for measuring temperature in the same manner as a thermistor or a thermocouple.
  • the resistors 3 and 4 are formed in a meander shape, but the shape is not limited, and may be a comb shape, a rectangular shape, or the like. Further, the shapes of the first resistor 3 and the second resistor 4 may be different from each other.
  • the first resistor 3 is formed having a boron-containing carbon obtained by boron-treating a carbon material, a carbon material not subjected to boron treatment, and a resin material.
  • first carbon material boron-containing carbon that has been subjected to boron treatment
  • second carbon material a carbon material that has not been subjected to boron treatment
  • the first carbon material and the second carbon material are mixed and used, it is preferable that the first carbon material and the second carbon material have the same material configuration.
  • FIG. 2 illustrates the boron treatment.
  • FIG. 2A is a schematic diagram of the carbon nanotube (CNT) 5
  • FIG. 2B is a schematic diagram of the boron source 6.
  • the boron source 6 is not particularly limited, and B powder, B 4 C, B 2 O 3 , BN, and the like can be presented.
  • the mixed material of the carbon nanotube 5 and the boron source 6 is filled in, for example, a discharge plasma sintering machine (SPS) (not shown), and heat-treated while passing an electric current through the mixed material.
  • SPS discharge plasma sintering machine
  • the heating temperature is about 2000 ° C.
  • boron-containing carbon nanotube (first carbon material) in which boron is doped into the carbon nanotube 5 can be manufactured.
  • FIG. 3A is a graph showing an increase / decrease in resistance value with respect to temperature change of the carbon nanotubes 5 (second carbon material) not subjected to boron treatment
  • FIG. It is a graph which shows the increase / decrease in the resistance value with respect to the temperature change of carbon material.
  • the carbon nanotubes constituting the first carbon material and the second carbon material used in the experiments of FIGS. 3A and 3B are VGCF (product name) manufactured by Showa Denko K.K.
  • the boron-containing carbon nanotube used in the experiment in FIG. 3B is a discharge plasma sintering machine in which boron carbide as a boron source is mixed with the carbon nanotube so that boron becomes 1 wt% (in the mixed material). SPS) and processed in vacuum at 2000 ° C. for 30 minutes.
  • VGCF the resistance value of the carbon nanotube as the second carbon material (without boron treatment: hereinafter referred to as VGCF) decreases almost linearly as the temperature increases. .
  • the temperature coefficient of this VGCF was ⁇ 1000 ppm / ° C.
  • the boron-containing carbon nanotube (hereinafter referred to as B-VGCF), which is the first carbon material, shows that the resistance value increases almost linearly as the temperature increases. It was.
  • the temperature coefficient of this B-VGCF was +120 ppm / ° C.
  • the resistance value of B-VGCF / VGCF hardly changed even when the temperature increased.
  • the temperature coefficient of B-VGCF / VGCF was ⁇ 3 ppm / ° C.
  • the temperature coefficient of B-VGCF / VGCF shown in FIG. 4 is substantially zero. Note that a measurement error is included in the range of substantially zero.
  • the first resistor 3 is made of resin that is a mixture of carbon nanotubes 5 (second carbon material) and boron-containing carbon nanotubes 8 (first carbon material) having positive and negative temperature coefficients. By dispersing in the material, the temperature coefficient of the first resistor 3 can be made substantially zero.
  • the second resistor 4 has a configuration in which boron-containing carbon nanotubes 8 (first carbon material) are dispersed in a resin material.
  • B-VGCF / VGCF shown in FIG. 4 is used for the first resistor 3 and B-VGCF is used for the second resistor 4.
  • the temperature coefficient of B-VGCF / VGCF is substantially zero, whereas the absolute value of the temperature coefficient of B-VGCF is substantially larger than zero.
  • the first resistor 3 shown in FIG. 1 is a fixed resistor (reference resistor) whose resistance value does not change even with a temperature change, while the second resistor 4 has a resistance value that changes with temperature change. It is a measuring resistor.
  • a voltage based on the resistance value of the second resistor 4 is input to the positive electrode input portion 10a of the differential amplifier 10 shown in FIG. 1B, and the resistance value of the first resistor 3 is input to the negative electrode input portion 10b.
  • a differential output can be obtained from the output unit 10c.
  • This differential output is based on the difference between the resistance values of the first resistor 3 and the second resistor 4, and the temperature can be detected by the differential output.
  • the first resistor 3 and the second resistor 4 are connected in series, and the potential at the connection point 11 between the first resistor 3 and the second resistor 4.
  • the (midpoint potential) is taken out, and the temperature can be detected based on the midpoint potential.
  • a differential output can be obtained by inputting the voltage acquired at the connection point of the full bridge circuit to the differential amplifier.
  • the same type of carbon material and the same type of resin are used for the first resistor 3 and the second resistor 4.
  • the “same kind” includes not only the same material but also the same kind if the properties are almost the same even if the composition and molecular weight are somewhat different. For example, any difference in temperature coefficient of about 10% or less is included in the same type. It is more preferable to use the same material for the first resistor 3 and the second resistor 4.
  • the same carbon nanotube (VGCF) is used for B-VGCF / VGCF used for the first resistor 3 and B-VGCF used for the second resistor 4.
  • the material of the resin (binder resin) used for the first resistor 3 and the second resistor 4 is not particularly limited, and it does not matter whether it is a thermosetting resin or a thermoplastic resin.
  • epoxy resin epoxy resin, polyethylene resin, urethane resin, acrylate resin, polyester resin, styrene resin, polycarbonate resin, butadiene resin, urea resin, phenol resin, and the like can be selected.
  • the second resistor 4 whose resistance value fluctuates due to a temperature change but also the first resistor 3 whose temperature coefficient is substantially zero is used.
  • the same type of carbon material and the same type of resin are used for the first resistor 3 and the second resistor 4, for example, when the resin swells due to humidity or the like, the resistance noise generated in the first resistor 3 and the second resistor 4 is substantially the same. For this reason, for example, by taking the difference between the resistance values of the first resistor 3 and the second resistor 4. It becomes possible to cancel the resistance noise.
  • the resistance noise that cannot be canceled only by the second resistor 4 can be canceled by combining the first resistor 3 and taking the difference of the resistance values of the resistors 3 and 4. As a result, it is possible to appropriately improve the temperature detection accuracy as compared with the prior art.
  • the resistance noise component is canceled even when the midpoint potential of the connection point 11 between the first resistor 3 and the second resistor 4 connected in series is detected. be able to.
  • the temperature of the first resistor 3 using carbon (B-VGCF / VGCF in FIG. 4) in which boron-containing carbon nanotubes 8 (first carbon material) and carbon nanotubes 5 (second carbon material) are mixed is used.
  • the coefficient is substantially 0, for example, the temperature coefficient can be substantially 0 by adjusting the amount of boron acting on the carbon nanotubes 5 (the amount of boron source added).
  • the first resistor 3 is composed of a carbon nanotube (B-VGCF) with an adjusted amount of boron action and a resin material.
  • the carbon nanotubes (VGCF) having the opposite sign of the temperature coefficient and the boron-containing carbon nanotubes (B-VGCF) are mixed at a predetermined ratio, thereby simplifying the process. And suitably, the temperature coefficient can be made substantially zero. Further, as shown in FIG. 3B, a boron-containing nanotube (B-VGCF) having a positive temperature coefficient substantially larger than 0 can be produced, and this boron-containing carbon nanotube (B-VGCF) is converted into a second value. It can be used as the resistor 4.
  • the second resistor 4 may be a carbon nanotube (no boron treatment) as the second carbon material (VGCF in FIG. 3A).
  • carbon whose resistance value temperature coefficient is controlled to a predetermined value other than 0 by mixing carbon nanotubes (without boron treatment) and boron-containing nanotubes may be used.
  • carbon whose resistance temperature coefficient is controlled to a predetermined value other than 0 by adjusting the amount of boron acting on the carbon nanotube (the amount of boron source added) may be used.
  • the temperature coefficient of the first resistor 3 is set to substantially 0.
  • the second resistor 4 has an absolute temperature coefficient that is higher than that of the first resistor 3.
  • a configuration having a large value may be employed.
  • the temperature coefficient of the first resistor 3 is not substantially zero, and the absolute value of the temperature coefficient of the first resistor 3 can be substantially larger than zero.
  • VGCF shown in FIG. 3A is used for the second resistor 4 and B-VGCF shown in FIG. 3B is used for the first resistor 3.
  • B-VGCF and VGCF can be mixed as the first resistor 3, but at this time, the temperature coefficient may not be substantially 0, and the temperature coefficient of the second resistor 4 ( The temperature coefficient (absolute value) may be smaller than the absolute value. Also in this embodiment, the same kind of carbon material and the same kind of resin are used for the first resistor 3 and the fourth resistor 4.
  • the temperature coefficient (absolute value) of the first resistor 3 is larger than 0, but the temperature of the first resistor 3 is increased.
  • the coefficient (absolute value) can be made smaller than the temperature coefficient (absolute value) of the second resistor 4.
  • the temperature can be detected. Also in this embodiment, resistance noise due to humidity or the like can be canceled, and the temperature detection accuracy can be improved as compared with the prior art.
  • the first resistor 3 and the second resistor of the above-described embodiment use carbon nanotubes treated with boron as the first carbon material, and use carbon nanotubes not treated with boron as the second carbon material.
  • the carbon nanotubes of the first carbon material and the second carbon material of the above-described embodiment are converted into fibrous carbon such as graphitized carbon fiber, carbon nanohorn, or carbon nanofilament, or carbon black, Any one or a mixture of two or more types of graphite can be substituted.
  • FIG. 6 shows resistance change characteristics (characteristics corresponding to temperature coefficients) with respect to temperature changes when graphitized carbon fibers are used as the first carbon material and the second carbon material.
  • graphitized carbon fiber “K223HM” manufactured by Mitsubishi Plastics, Inc. was used.
  • FIG. 6A shows the temperature characteristics of the second carbon material in which the graphitized carbon fiber is not boron-treated
  • FIG. 6B shows the temperature of the first carbon material in which the graphitized carbon fiber is boron-treated. The characteristics are shown.
  • This second carbon material is obtained by mixing boron carbide with a carbon material, adjusting the mixture to 1 wt% boron, and performing boron treatment by heating with a discharge plasma sintering machine (SPS). It is.
  • SPS discharge plasma sintering machine
  • FIGS. 7 (a) and 7 (b) are examples in which carbon black is used as the carbon material, and acetylene black (trade name “Denka Black”) manufactured by Denki Kagaku Kogyo Co., Ltd. is used to change the resistance value with respect to temperature change. It is the result of having measured each.
  • acetylene black trade name “Denka Black” manufactured by Denki Kagaku Kogyo Co., Ltd.
  • FIGS. 8A and 8B are examples in which carbon black different from that used in FIG. 7 is used as a carbon material.
  • Ketjen black “EC300J” manufactured by Lion Co., Ltd. is used, and resistance to temperature change is shown. It is the result of measuring each change in value.
  • the second carbon material that has not been boron-treated has a negative temperature coefficient
  • the first carbon material that has been boron-treated has a temperature of It can be seen that the coefficient is positive. Therefore, by mixing these materials, a resistor having substantially zero temperature characteristics can be formed.
  • a resistor having substantially zero temperature characteristics can also be configured by using only a boron-treated carbon material and adjusting the amount of boron contained.
  • the resistance value changes due to expansion and contraction accompanying the temperature change of the resin material. That is, by using a resin material, the resistance value has temperature characteristics. However, in the said embodiment, it originates in expansion
  • the temperature characteristic of the first carbon material can be varied by adjusting the boron content of the first carbon material, and the temperature of the resin material can be changed. It becomes possible to cancel or reduce a change in resistance value caused by expansion or contraction due to the change.
  • a resin material is used as a binder, a mixture of a carbon material and a resin material is patterned on the surface of the substrate 2, and the carbon material is fixed on the substrate surface by the resin material.
  • the carbon material and the glass powder are mixed, a pattern is formed on the surface of an alumina substrate or the like, and the glass powder is sintered. It can be fixed on the surface.
  • the temperature coefficient can be made substantially zero.
  • the temperature coefficient can be made substantially zero by using only the first carbon material and adjusting the amount of boron contained.
  • FIG. 5 shows a resistor 20 according to another embodiment.
  • the resistor 20 is enclosed in a cover 23 in which both sides of a carbon pressure-molded body 21 are sandwiched between electrode portions 22 and 22 and the carbon pressure-molded body 21 and the electrode portions 22 and 22 are formed of a glass material. Has been.
  • the wiring members 24 and 24 are connected to the electrode portions 22 and 22.
  • the carbon pressure-molded body 21 is obtained by pressure-molding a mixture of the first carbon material and the second carbon material, and is adjusted so that the temperature coefficient is substantially zero. Alternatively, the carbon pressure-molded body 21 is obtained by pressure-molding the first carbon material, and the temperature coefficient is substantially set to 0 by adjusting the boron content.
  • the electrode portions 22 and 22 are formed of dumet wires, and the wiring members 24 and 24 are formed of CP wires.
  • the resistor 20 shown in FIG. 5 can maintain its shape even if the carbon pressure-molded body does not contain a resin material. Even if a resin material is used, the amount thereof may be small. Since it is not necessary to include a resin material or it may be used slightly, it is not necessary to take into account a change in resistance value due to expansion or contraction of the resin material due to a temperature change, and the first carbon material and the second carbon material By adjusting the mixing ratio, the temperature coefficient can be made substantially zero. Alternatively, the temperature coefficient can be made substantially zero by using only the first carbon material and adjusting the amount of boron contained.
  • carbon nanotubes not subjected to boron treatment are used as the second carbon material.
  • a resin material fired and carbonized can be used as the second carbon material.
  • the second carbon material is formed by impregnating an aggregate of the first carbon material subjected to the boron treatment with a phenol resin and firing the carbon to carbonize the phenol resin.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

La présente invention concerne un dispositif de détection de température qui permet, en particulier, d'annuler la composante de bruit d'une résistance et d'améliorer la précision de détection. Le dispositif de détection de température est caractérisé par ce qui suit : il comprend une première résistance qui présente un coefficient de température qui vaut sensiblement 0 et qui possède un carbone contenant du bore et une résine, ainsi qu'une seconde résistance qui possède un matériau carboné et une résine ou un carbone contenant du bore et une résine et qui présente un coefficient de température absolue qui est sensiblement supérieur à 0 ; le même type de matériau carboné et le même type de résine sont utilisés dans la première résistance et la seconde résistance ; et la température est détectée sur la base de la différence de résistance entre la première résistance et la seconde résistance.
PCT/JP2014/065426 2013-06-12 2014-06-11 Résistance et dispositif de détection de température Ceased WO2014200011A1 (fr)

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JP2013123610 2013-06-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113284688A (zh) * 2021-05-17 2021-08-20 上海福宜纳米薄膜技术有限公司 双精调线高温薄膜铂电阻及其调阻方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63211601A (ja) * 1987-02-26 1988-09-02 横河電機株式会社 半導体抵抗素子を用いた温度センサ
JPH05172651A (ja) * 1991-12-19 1993-07-09 Tdk Corp サーミスタ素子
JPH06163201A (ja) * 1992-06-16 1994-06-10 Philips Electron Nv 抵抗薄膜
JPH06349606A (ja) * 1993-06-08 1994-12-22 Kobe Steel Ltd ダイヤモンドサーミスタ及びその製造方法
JP2005331486A (ja) * 2004-05-21 2005-12-02 Ngk Spark Plug Co Ltd 温度センサ
JP2007019274A (ja) * 2005-07-07 2007-01-25 Sumitomo Metal Mining Co Ltd 抵抗薄膜、薄膜抵抗体およびその製造方法
JP2007234911A (ja) * 2006-03-01 2007-09-13 Kobe Steel Ltd 高温動作ダイヤモンドトランジスタ装置及びこれを用いた温度計、増幅器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63211601A (ja) * 1987-02-26 1988-09-02 横河電機株式会社 半導体抵抗素子を用いた温度センサ
JPH05172651A (ja) * 1991-12-19 1993-07-09 Tdk Corp サーミスタ素子
JPH06163201A (ja) * 1992-06-16 1994-06-10 Philips Electron Nv 抵抗薄膜
JPH06349606A (ja) * 1993-06-08 1994-12-22 Kobe Steel Ltd ダイヤモンドサーミスタ及びその製造方法
JP2005331486A (ja) * 2004-05-21 2005-12-02 Ngk Spark Plug Co Ltd 温度センサ
JP2007019274A (ja) * 2005-07-07 2007-01-25 Sumitomo Metal Mining Co Ltd 抵抗薄膜、薄膜抵抗体およびその製造方法
JP2007234911A (ja) * 2006-03-01 2007-09-13 Kobe Steel Ltd 高温動作ダイヤモンドトランジスタ装置及びこれを用いた温度計、増幅器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113284688A (zh) * 2021-05-17 2021-08-20 上海福宜纳米薄膜技术有限公司 双精调线高温薄膜铂电阻及其调阻方法

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