WO2015180630A1 - 波长转换装置及其相关发光装置 - Google Patents

波长转换装置及其相关发光装置 Download PDF

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Publication number
WO2015180630A1
WO2015180630A1 PCT/CN2015/079868 CN2015079868W WO2015180630A1 WO 2015180630 A1 WO2015180630 A1 WO 2015180630A1 CN 2015079868 W CN2015079868 W CN 2015079868W WO 2015180630 A1 WO2015180630 A1 WO 2015180630A1
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Prior art keywords
wavelength conversion
layer
conversion device
particles
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/079868
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English (en)
French (fr)
Inventor
李乾
许颜正
田梓峰
陈雨叁
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Shenzhen Appotronics Corp Ltd
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Appotronics Corp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Appotronics Corp Ltd filed Critical Appotronics Corp Ltd
Priority to US15/313,497 priority Critical patent/US20170146219A1/en
Priority to KR1020167036092A priority patent/KR101997113B1/ko
Priority to EP15799611.7A priority patent/EP3150909B1/en
Priority to KR1020197011129A priority patent/KR102064886B1/ko
Priority to JP2016570015A priority patent/JP6348189B2/ja
Publication of WO2015180630A1 publication Critical patent/WO2015180630A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J1/00—Adhesives based on inorganic constituents
    • C09J1/02—Adhesives based on inorganic constituents containing water-soluble alkali silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00—Lighting devices intended for fixed installation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02—Combinations of only two kinds of elements
    • F21V13/04—Combinations of only two kinds of elements the elements being reflectors and refractors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02—Combinations of only two kinds of elements
    • F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0257—Diffusing elements; Afocal elements characterised by the diffusing properties creating an anisotropic diffusion characteristic, i.e. distributing output differently in two perpendicular axes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0273—Diffusing elements; Afocal elements characterized by the use
    • G02B5/0284—Diffusing elements; Afocal elements characterized by the use used in reflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0273—Diffusing elements; Afocal elements characterized by the use
    • G02B5/0294—Diffusing elements; Afocal elements characterized by the use adapted to provide an additional optical effect, e.g. anti-reflection or filter
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2227—Oxides; Hydroxides of metals of aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • C08K2003/2241—Titanium dioxide
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/30—Semiconductor lasers

Definitions

  • the present invention relates to the field of display and illumination, and more particularly to a wavelength conversion device and its associated illumination device.
  • LED Or halogen bulbs as light sources are increasingly unable to meet the high power and high brightness requirements of display and illumination.
  • Use solid state light sources such as LD ( Laser Diode The laser emits excitation light to excite the wavelength conversion material to obtain visible light of various colors, and this technology is increasingly used in illumination and display.
  • LD Laser Diode
  • This technology has the advantages of high efficiency, low energy consumption, low cost and long life, and is an ideal alternative to existing white or monochromatic light sources.
  • the light source of the laser-excited wavelength conversion material is used in order to improve the light utilization efficiency, and the reflection type light is incident on the reflection plate (ie, the reflection layer and the substrate) through the wavelength conversion material sheet (ie, the light-emitting layer), and then It is reflected back to the wavelength conversion material sheet to ensure that the light exits in the same direction, avoiding light loss caused by the scattering effect of the wavelength conversion material sheet.
  • the reflector mainly adopts metal as a substrate, such as aluminum, aluminum alloy, copper, etc., and is formed by laminating a metal substrate and a high-reflection film, wherein the high-reflection film layer is generally made of high-purity aluminum or high-purity silver;
  • the conversion material sheet is made of silica gel or resin transparent organic material as a packaging medium, and the wavelength conversion material particles and the silica gel are used.
  • the resins are mixed together and then coated on a metal substrate to form a light-emitting layer.
  • silica gel / The resin has poor insulating ability to air, and the air easily passes through the wavelength conversion material layer to contact the reflective layer on the substrate, so that the reflective layer comes into contact with the air.
  • the material of the reflective layer is silver
  • the silver atoms are easily vulcanized and oxidized with hydrogen sulfide, oxygen, etc. in the atmosphere, so that the reflectivity and thermal stability of the reflective layer are drastically reduced, and even the phenomenon of blackening of the silver layer occurs.
  • the reflective layer is deactivated; for aluminum reflective layers, aluminum is more stable than silver, but has a low reflectivity, which absorbs more light and converts it into heat relative to the silver layer.
  • the inventors sought a reflective layer having high thermal stability and high reflectance, and found that a white inorganic material such as a metal oxide such as alumina has a high reflectance and is resistant to high temperatures and can satisfy Thermal stability of high power laser irradiation.
  • a white inorganic material such as a metal oxide such as alumina
  • the above refractive index requires the reflective layer to have a sufficiently large thickness, and the increase in the thickness of the reflective layer causes a decrease in the heat conduction effect of the reflective layer, which in turn causes the light-emitting layer of the wavelength conversion device to decrease in luminous efficiency due to heat accumulation, thus a reflectance. Reflective layers with high and small thicknesses are in urgent need of development.
  • the present invention provides a wavelength conversion device having a reflective layer having a high reflectance and a thin thickness.
  • the invention provides a wavelength conversion device comprising a substrate, a reflective layer and a light-emitting layer which are sequentially stacked, the reflective layer comprises reflective particles, auxiliary particles and a first binder, and the reflective particles are used for reflecting light and assisting particles.
  • a first binder is used to bond the reflective particles and the auxiliary particles into a layer; the luminescent layer comprises a wavelength converting material and a second binder.
  • the reflective particles are alumina and the auxiliary particles are titanium oxide.
  • the auxiliary particles occupy a mass fraction of the reflective layer of 40 to 75%, and the reflective particles occupy a mass fraction of the reflective layer of 0.5 to 30%. .
  • the titanium oxide has a particle diameter of 0.02 to 1 ⁇ m and the alumina has a particle diameter of 0.01 to 1 ⁇ m.
  • the titanium oxide has a particle diameter of 0.2 to 0.5 ⁇ m and the alumina has a particle diameter of 0.02 to 0.7 ⁇ m.
  • the thickness of the reflective layer is less than 70 ⁇ m, and the reflectivity of the reflective layer to visible light is greater than 95%. More preferably, the thickness of the reflective layer is less than 30 ⁇ m, and the reflectance of the reflective layer to visible light is greater than 95%.
  • the reflective layer has a porosity of less than 35%.
  • the first binder is a first glass frit, and the first glass frit has a mass fraction of the reflective layer of 20 to 50%.
  • the first glass frit is SiO 2 -B 2 O 3 -RO , wherein R is selected from one or more of Mg, Ca, Sr, Ba, Na, K.
  • the reflective layer is formed by mixing the reflective particles, the auxiliary particles, the first glass frit and the organic carrier, and the organic carrier is a mixture of ethyl cellulose, terpineol, butyl carbitol or Silicone oil, the mass fraction of organic carrier residues in the reflective layer is 0.001% ⁇ 0.1%.
  • the second binder is a second glass frit selected from the group consisting of SiO 2 -B 2 O 3 -RO , SiO 2 -TiO 2 -Nb 2 O 5 -R' 2 O , ZnO-P 2 O 5 One or more, wherein R is selected from one or more of Mg, Ca, Sr, Ba, Na, K, and R' is selected from one or more of Li, Na, K.
  • the first binder is silica gel or a resin
  • the auxiliary particles are titanium oxide treated by a coupling agent
  • the coupling agent includes a silane coupling agent and ethyl orthosilicate.
  • the second adhesive is silica gel or a resin.
  • the wavelength conversion material accounts for 30 to 75% of the volume of the luminescent layer, and the second binder occupies a volume fraction of the luminescent layer. 25 ⁇ 70%, more preferably, the wavelength conversion material accounts for 35 ⁇ 55% of the luminescent layer, and the second binder occupies 45-65% of the luminescent layer.
  • the luminescent layer has a thickness of 50 to 300 ⁇ m.
  • the substrate is an aluminum nitride substrate; or the substrate is a metal substrate.
  • the wavelength conversion device further comprises an antireflection film on a side of the luminescent layer away from the reflective layer.
  • the wavelength conversion device further comprises a glass layer composed of a third glass frit between the light-emitting layer and the anti-reflection film.
  • the glass layer has a thickness of 20 to 50 ⁇ m.
  • the present invention also provides a light-emitting device comprising an excitation light source, preferably further comprising the wavelength conversion device of any of the above.
  • the present invention includes the following beneficial effects:
  • the reflected particles are used to reflect the light
  • the auxiliary particles are used to fill the gap between the reflective particles to fill the gap.
  • the gap between the reflective particles reduces the incident depth of the light to the reflective layer, which not only ensures a higher reflectivity of the reflective layer, but also achieves a small thickness of the reflective layer, thereby enabling the wavelength conversion device to have high light utilization efficiency. And have good heat dissipation.
  • FIG. 1 is a schematic structural view of a first embodiment of a wavelength conversion device according to the present invention.
  • FIG. 2 is a schematic structural view of a second embodiment of a wavelength conversion device according to the present invention.
  • FIG 3 is a schematic structural view of a third embodiment of the wavelength conversion device of the present invention.
  • FIG. 1 is a schematic structural diagram of a first embodiment of a wavelength conversion device according to the present invention.
  • a wavelength conversion device 100 is illustrated.
  • the substrate 130, the light emitting layer 110, and the reflective layer 120 are included.
  • the reflective layer 120 comprises reflective particles, auxiliary particles and a first binder, and the light-emitting layer 110 A wavelength converting material and a second binder are included.
  • the light emitted by the light-emitting layer is incident on the reflective layer, and is returned to the light-emitting layer by reflection.
  • the heat generated by the light-emitting layer is conducted to the substrate through the reflective layer and then diffused.
  • the reflective layer 120 has two functions, one is light reflection and the other is heat conduction. Reflective layer 120 It is required to have a high reflectance to ensure light utilization; the reflective layer 120 also needs to have good thermal conductivity, and the thinner the reflective layer, the better the thermal conductivity.
  • the reflective layer 120 includes reflective particles, auxiliary particles, and a first binder.
  • reflective particles mean high reflection characteristics, especially Visible light in the wavelength range of 400 to 800 nm has a reflectance of more than 90%, and the particle size of these particles is 2 ⁇ m.
  • the reflective particles having such characteristics may be alumina, barium sulfate, zinc oxide, boron nitride or the like.
  • Auxiliary particles are particles that have good hiding power, good dispersibility, and are not easily agglomerated, so that they can be well mixed and dispersed with the reflective particles. This property enables the reflective particles to be fully spread evenly, so that the reflective particles can be sufficiently thick without being too thick. Reflectivity.
  • the reflective layer composed of the auxiliary particles alone has a low reflectivity and cannot meet the functional requirements of the reflective layer, but only needs to be added relative to the auxiliary particles. 20% by mass of reflective particles can increase the reflectivity of the auxiliary particle layer by only 80 ⁇ 85% to more than 95% (the thickness of the reflective layer is equal).
  • the particle size of the auxiliary particles is usually 1 ⁇ m.
  • the auxiliary particles having such characteristics may be titanium oxide or the like.
  • the reflective particles are alumina (Al 2 O 3 ), and the auxiliary particles are titanium oxide (TiO 2 ).
  • Alumina has excellent reflectance to visible light, and pure alumina layer can reflect up to 90% of visible light. However, due to the large gap between the particles of alumina, light will bypass the transmission of alumina particles, so thick stacking is required.
  • the aluminum oxide layer can achieve the above reflectance, and the greater the thickness of the aluminum oxide layer, the worse the thermal conductivity of the layer. Titanium oxide itself has a certain reflectivity, especially for light having a wavelength greater than 550 nm. However, the reflectance of titanium oxide to a wavelength of less than 480 nm is not good, and the performance requirement of the reflectivity of the reflective layer cannot be satisfied.
  • alumina and titanium oxide reveals that the mixed reflective layer is easily formed into a film, and the titanium oxide fills the voids between the alumina particles while utilizing its own reflection characteristics to ensure that light passing through between the alumina particles is partially reflected. go back. This allows the mixed layer to achieve a higher reflectance at a thinner thickness. Further, titanium oxide has better wettability with respect to alumina and a softened adhesive (such as glass frit), and it is difficult to form closed bubbles inside.
  • the reflective layer has a porosity of less than 35%.
  • the porosity of the reflective layer is large, the reflective layer has a loose structure, the thickness thereof is large, and the thermal conductivity of the pores is extremely low, thereby causing poor thermal conductivity of the entire reflective layer.
  • the reflective layer 120 when the amount of alumina is excessive or the amount of titanium oxide is too small, the reflective layer 120 Not dense enough, it requires a thicker thickness to achieve sufficient reflectivity; and when the amount of alumina is too small or the amount of titanium oxide is too large, the light is on the reflective layer 120 The reflectivity of the particle surface is not high enough to achieve the desired reflectivity. It has been experimentally proved that the mass fraction of alumina in the reflective layer 120 is 0.5 to 30%, and the mass fraction of titanium oxide in the reflective layer 120 is 40 ⁇ 75%, the reflective layer has both good reflectivity and thin thickness.
  • the auxiliary particles need to match the particle size of the reflective particles to achieve the function of filling and thinning, that is, the particle size difference between the auxiliary particles and the reflective particles is small.
  • the particle size of the alumina is 0.01 to 1 ⁇ m, more preferably 0.02 to 0.7 ⁇ m, and the particle diameter of titanium oxide is 0.02 to 1 ⁇ m, more preferably 0.2 to 0.5 ⁇ m.
  • the greater the thickness of the reflective layer 120, the greater the thermal resistance of the reflective layer, and those skilled in the art can set the reflective layer in accordance with the teachings of the present invention.
  • the thickness of the reflective layer 120 is greater than 70 ⁇ m, the reflectance to visible light is greater than 95%, and more preferably, the thickness of the reflective layer 120 is Between 30 and 70 ⁇ m, the reflectance to visible light can still be greater than 95%.
  • the thickness of the reflective layer exceeds 70 ⁇ m, the effect of thickness on reflectance is not significant, and when the thickness of the reflective layer is less than 20 ⁇ m At the time, the reflectance began to drop significantly.
  • the invention can realize the thin layer to realize the reflective layer 120 while ensuring that the reflectance satisfies the normal function of the reflective layer.
  • the thermal resistance is small, the material cost is reduced, and the quality of the optical wavelength conversion device is reduced.
  • the reflective layer 120 of this embodiment The first binder is included in addition to the reflective particles and the auxiliary particles.
  • the first binder is used to bond the reflective particles and the auxiliary particles into a layer. Since the reflective particles and the auxiliary particles themselves do not have cohesive properties, even if they can be spliced and stacked into layers, they are loosely destroyed under the action of external force or in motion, and the first binder functions to reflect particles and auxiliary particles. The structure is fixed.
  • the reflective layer 120 The first binder in the resin is a resin or a silica gel.
  • the resin and the silica gel are heated to become a semi-solid fluid, which can penetrate into the void formed by the reflective particles and the auxiliary particles, and are coated in layers around the reflective particles and the auxiliary particles.
  • the titanium oxide is pre-treated with ethyl orthosilicate to make it more compatible with the silica gel or the resin, thereby facilitating the coating of the silica gel or the resin;
  • the coupling agent can also achieve the same effect.
  • the silane coupling agent has an organic group at one end and an inorganic one end, which can effectively connect titanium oxide and silica gel.
  • the luminescent layer 110 comprises a wavelength converting material and a second binder, wherein the second binder is a resin or a silica gel.
  • Light-emitting layer 110 and the reflective layer 120 use the same type of material as the binder to facilitate the combination of the two.
  • the first adhesive and the second adhesive may be the same resin or silica gel, or may be different resins or silica gel.
  • the substrate 130 The metal substrate can be a copper plate, an aluminum plate or an aluminum alloy plate, which can withstand a certain temperature, and has excellent thermal conductivity and convenient mechanical processing, and has excellent performance under low power laser light source ( ⁇ 50 W) working condition.
  • Substrate 130 It is also possible to select a ceramic substrate with good thermal conductivity. Compared with the metal substrate, the ceramic substrate has better heat resistance and can adapt to the working conditions of the medium and high power laser light source.
  • FIG. 1 A variant embodiment of the first embodiment of the present invention is shown in FIG. 1, wherein the wavelength conversion device 100
  • the structure is the same as that of the first embodiment except that the constituent materials of the light-emitting layer 110, the reflective layer 120, and the substrate 130 in the wavelength conversion device 100 are different from those in the first embodiment.
  • the first binder contained in the reflective layer 120 in this embodiment is the first glass frit.
  • the first glass frit is preferably SiO 2 -B 2 O 3 -RO (R is selected from one or more of Mg, Ca, Sr, Ba, Na, K).
  • R is selected from one or more of Mg, Ca, Sr, Ba, Na, K.
  • the glass powder has excellent optical properties, reduces the loss of light when propagating in the reflective layer, thereby reducing the heat generated on the reflective layer; in addition, the flow of the glass frit is in the range of 200 ° C above the softening point. It is not very large, and it is ensured that the reflective layer 120 maintains the original flat shape in the process of high temperature treatment, and does not deform, warp, bulge, etc. due to the flow of the glass liquid.
  • the first glass frit accounts for 20 to 50% of the total mass of the reflective layer 120. Glass powder less than 20% When it is insufficient to coat all the reflective particles and the auxiliary particles, it is not conducive to the bonding formation of the reflective layer. When the glass powder is more than 50%, the reflective particles and the auxiliary particles are too dispersed, which is not conducive to the reflection of the incident light by the reflective layer.
  • the reflective layer 120 It is formed by mixing reflective particles, auxiliary particles, first glass powder and organic carrier.
  • the organic carrier is used for the preparation of the reflective layer slurry, so that the reflective particles, the auxiliary particles and the first glass powder are sufficiently mixed and dispersed in the liquid phase, and at the same time, the slurry has a certain fluidity so that the reflective layer is on the substrate. Brush and form.
  • the organic carrier needs to satisfy the wettability to the reflective particles, the auxiliary particles and the first glass frit, and the organic carrier must be completely decomposed and discharged at the high temperature treatment stage.
  • the organic vehicle in this embodiment is a mixture of ethyl cellulose, terpineol and butyl carbitol, and the organic vehicle may also be a silicone oil.
  • a mixture of ethyl cellulose, terpineol and butyl carbitol or silicone oil has good wettability and dispersibility, and the organic carrier can be 360 ⁇ 420 It is almost completely decomposed and discharged at °C, but it is possible that some organic carriers are coated in the reflective particles, the auxiliary particles and the glass powder, and cannot be discharged during the subsequent high-temperature treatment with the reflective particles, the auxiliary particles or the first glass powder. Side reaction, so there is a part of the organic carrier residue in the reflective layer, the mass fraction is 0.001 ⁇ 0.1%.
  • the second binder in the light-emitting layer 110 is a second glass frit.
  • the second glass powder selects a glass powder having high transparency, low light absorption rate and high thermal conductivity.
  • the high transparency is to facilitate the injection and ejection of light; the light absorption rate is small to reduce the loss of light after multiple reflections in the light-emitting layer; the high thermal conductivity is favorable for heat conduction and lowers the operating temperature of the light-emitting layer.
  • the second glass frit may be selected from one or more of SiO 2 -B 2 O 3 -RO , SiO 2 -TiO 2 -Nb 2 O 5 -R' 2 O , ZnO-P 2 O 5 , wherein R is selected from One or more of Mg, Ca, Sr, Ba, Na, K, and R' is selected from one or more of Li, Na, and K.
  • the first binder and the luminescent layer 110 in the reflective layer 120 The second binder is made of glass powder, which is beneficial to the combination of the two layers, and also ensures the overall high temperature resistance of the wavelength conversion device 100.
  • the volume fraction of the wavelength conversion material is too large, and the volume fraction of the second glass powder is too small, which may cause the luminescent layer to be difficult to bond into a layer; and the volume fraction of the wavelength converting material is too small, which may result in Low luminous efficiency.
  • the wavelength conversion material accounts for the volume fraction of the light-emitting layer. 30 ⁇ 75%, the second binder accounts for 25 ⁇ 70% of the volume of the luminescent layer. In a preferred embodiment, the wavelength conversion material accounts for 35 to 55% of the volume of the luminescent layer.
  • the second binder occupies 45-65% by volume of the luminescent layer.
  • the light emitting layer 110 of this embodiment In order to satisfy the luminous efficiency, it is necessary to have a certain thickness such that the distance of light propagation in the light-emitting layer is sufficient for wavelength conversion sufficiently, but the light-emitting layer 110 It can't be too thick, otherwise it has poor thermal conductivity and poor heat dissipation.
  • the thickness of the light-emitting layer 110 is 50 to 300 ⁇ m.
  • the substrate 130 It is an aluminum nitride ceramic substrate which has good thermal conductivity and mechanical strength, so that it does not decompose and deform at high temperature, and the difference in thermal expansion coefficient between aluminum nitride and titanium oxide and aluminum oxide is small, and the aluminum nitride substrate is resistant. High temperature, able to adapt to medium and high power laser sources (> 100W).
  • the substrate 130 is prepared by a casting method, and has a relative density of more than 95% and a thermal conductivity of more than 150 W/mK.
  • the substrate 130 may also be a ceramic material such as alumina, silicon carbide, silicon nitride, boron nitride or cerium oxide, the substrate of which has the same or similar properties as the aluminum nitride substrate.
  • a ceramic material such as alumina, silicon carbide, silicon nitride, boron nitride or cerium oxide, the substrate of which has the same or similar properties as the aluminum nitride substrate.
  • FIG. 2 is a schematic structural diagram of Embodiment 2 of a wavelength conversion device according to the present invention.
  • the wavelength conversion device 200 of this embodiment The illuminating layer 210, the reflecting layer 220 and the substrate 230 are the same as those in the first embodiment, and will not be described in detail in this embodiment. Different from the first embodiment, as shown in FIG. 2, the wavelength conversion device 200 A glass layer 260 and an anti-reflection film 250 are also included.
  • the glass layer 260 is located on the light-emitting layer 210 and is composed of a third glass frit. Due to the luminescent layer 210 The surface may have a small amount of wavelength-converting material particles protruding, and coating on such a surface may cause the film to be uneven, and if the luminescent layer is polished and polished, it is possible to damage the luminescent layer during the smoothing and polishing process. Pure glass is easy to polish and polish, and a smooth and smooth surface is obtained, which is beneficial to the realization of coating.
  • the glass layer 260 too thin will make the layer thickness uniformity difficult to control, and the glass layer 260 too thick will affect the light penetration, experimentally measured, the thickness of the glass layer of 20 ⁇ 50 ⁇ m 260 It not only ensures uniformity but also does not affect the penetration of light (less than 1% of the transmission of light).
  • the anti-reflection film 250 is located on the glass layer 260 to reduce the light reflection at the interface and enhance the transmission of light, thereby effectively improving the light utilization efficiency.
  • the material of the antireflection film may be selected from SiO 2 or MgF 2 and has a thickness of 50 to 150 nm.
  • the addition of the glass layer 260 is a preferred embodiment, and the anti-reflection film may be directly plated on the luminescent layer 210.
  • the anti-reflection film may be directly plated on the luminescent layer 210.
  • such direct coating may cause the film to be uneven.
  • FIG. 3 is a schematic structural diagram of Embodiment 3 of a wavelength conversion device according to the present invention.
  • the wavelength conversion device 300 of this embodiment The light-emitting layer 310, the reflective layer 320, and the substrate 330 are the same as those in the first embodiment, and will not be described in detail in this embodiment.
  • the embodiment further includes a driving device 340.
  • the driving device 340 in this embodiment is a motor.
  • the substrate 330 in this embodiment is a circular substrate carrying a circular reflective layer 320 and a light-emitting layer 310.
  • the substrate 330 is fixedly coupled to drive the substrate 330 and the reflective layer 320 and the light-emitting layer 310 thereon when the driving device 340 is rotated.
  • the rotation is performed together to prevent the excitation light of the excitation source from being irradiated to a point on the luminescent layer for a long time to cause the wavelength conversion material at the luminescent point on the luminescent layer 310 to be quenched.

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Abstract

一种波长转换装置（100），包括依次叠置的基板（130）、反射层（120）和发光层（110）。发光层（110）包含波长转换材料和第二粘结剂，反射层（120）包含反射粒子、辅助粒子和第一粘结剂。反射粒子用于对光进行反射，辅助粒子用于填充反射粒子间的缝隙。第一粘结剂用于将反射粒子和辅助粒子粘结成层。反射层（120）既保证了较高的反射率，又实现了较低的厚度，从而使得发光层（110）产生的热量更好的通过反射层（120）传递到基板，避免了发光层（110）温度过高而造成的光转换效率下降。此外，还公开了一种包含这种波长转换装置（100）的发光装置。

Description

波长转换装置及其相关发光装置 技术领域
本发明涉及显示和照明领域，特别涉及一种波长转换装置及其相关发光装置。
背景技术
随着显示和照明技术的发展，原始的 LED 或卤素灯泡作为光源越来越不能满足显示和照明高功率和高亮度的需求。采用固态光源如 LD （ Laser Diode ，激光二极管）发出的激发光以激发波长转换材料的方法能够获得各种颜色的可见光，该技术越来越多的应用于照明和显示中。这种技术具有效率高、能耗少、成本低、寿命长的优势，是现有白光或者单色光光源的理想替代方案。
现有技术中的激光激发波长转换材料的光源，为了提高光利用率，多采用反射式--光经过波长转换材料片（即发光层）后入射于反射板（即反射层和基板），然后被反射回波长转换材料片，以确保光沿同一方向出射，避免因波长转换材料片的散射作用而造成的光损失。现有技术中反射板主要采用金属作为基板，如铝、铝合金、铜等，由金属基材和高反射膜层叠置而成，其中高反射膜层一般采用高纯铝或者高纯银作为镀层；波长转换材料片采用硅胶或树脂类透明有机物作为封装介质，将波长转换材料颗粒与硅胶 / 树脂混合在一起，然后再涂覆于金属基板之上形成发光层。然而，硅胶 / 树脂对空气的隔绝能力差，空气容易透过波长转换材料层与基板上的反射层接触，使得该反射层与空气产生接触。当反射层材料选用银时，银原子很容易与大气中的硫化氢、氧气等发生硫化、氧化反应，从而使反射层的反射率和热稳定性急剧降低，甚至发生银层发黑的现象，使反射层失效；而对于铝反射层来说，铝的稳定性高于银，但是反射率不高，其相对于银层吸收更多的光并转化为热量。
由于金属反射层的上述缺陷，发明人寻求一种热稳定性高、反射率高的反射层，发现白色无机材料如氧化铝等金属氧化物具有较高的反射率，且其耐高温，能够满足大功率激光照射的热稳定性。然而，为达到较高的反射率（如达到对可见光 90% 以上的折射率），需要反射层具有足够大的厚度，而反射层厚度的增加会导致反射层导热效果降低，进而导致波长转换装置的发光层因热量积累而发光效率下降，因此一种反射率高、厚度小的反射层亟待开发。
 技术问题
针对上述技术问题，本发明提供了一种波长转换装置，该波长转换装置具有一种反射率高、厚度薄的反射层。
本发明提供了一种波长转换装置，包括依次叠置的基板、反射层、发光层，反射层包含反射粒子、辅助粒子和第一粘结剂，反射粒子用于对光进行反射，辅助粒子用于填充反射粒子间的缝隙，第一粘结剂用于将反射粒子和辅助粒子粘结成层；发光层包含波长转换材料和第二粘结剂。
优选地，反射粒子为氧化铝，辅助粒子为氧化钛。
优选地，辅助粒子占反射层的质量分数为 40~75% ，反射粒子占反射层的质量分数为 0.5~30% 。
优选地，氧化钛的粒径为 0.02~1 μ m ，氧化铝的粒径为 0.01~1 μ m ，优选地，氧化钛的粒径为 0.2~0.5 μ m ，氧化铝的粒径为 0.02~0.7 μ m 。
优选地，反射层厚度小于 70 μ m ，反射层对可见光的反射率大于 95% ，更优选地反射层厚度小于 30 μ m ，反射层对可见光的反射率大于 95% 。
优选地，反射层的孔隙率小于 35% 。
优选地，第一粘结剂为第一玻璃粉，第一玻璃粉占反射层的质量分数为 20~50% 。
优选地，第一玻璃粉为 SiO2-B2O3-RO ，其中 R 选自 Mg 、 Ca 、 Sr 、 Ba 、 Na 、 K 中的一种或多种。
优选地，反射层为通过将反射粒子、辅助粒子、第一玻璃粉和有机载体混合后烧结成型的，有机载体为乙基纤维素、萜品醇、丁基卡必醇三者的混合液或硅油，反射层中有机载体残余物的质量分数为 0.001%~0.1% 。
优选地，第二粘结剂为第二玻璃粉，选自 SiO2-B2O3-RO 、 SiO2-TiO2-Nb2O5-R' 2O 、 ZnO-P2O5 中的一种或多种，其中 R 选自 Mg 、 Ca 、 Sr 、 Ba 、 Na 、 K 中的一种或多种， R' 选自 Li 、 Na 、 K 中的一种或多种。
优选地，第一粘结剂为硅胶或树脂，辅助粒子为经偶联剂处理的氧化钛，偶联剂包括硅烷偶联剂、原硅酸乙酯。
优选地，第二粘接剂为硅胶或树脂。
优选地，波长转换材料占发光层的体积分数为 30~75% ，第二粘结剂占发光层的体积分数为 25~70% ，更优选地波长转换材料占发光层的体积分数为 35~55% ，第二粘结剂占发光层的体积分数为 45-65% 。
优选地，发光层厚度为 50~300μm 。
优选地，基板为氮化铝基板；或基板为金属基板。
优选地，波长转换装置还包括增透膜，位于发光层远离反射层的一侧。
优选地，波长转换装置还包括玻璃层，由第三玻璃粉组成，位于发光层与增透膜之间。
优选地，玻璃层的厚度为 20~50μm 。
本发明还提供了一种发光装置，包括激发光源，优选地，还包括上述任一项的波长转换装置。
与现有技术相比，本发明包括如下有益效果：
本发明中，通过在波长转换装置的反射层中采用反射粒子、辅助粒子和第一粘结剂的组成结构，利用反射粒子对光进行反射，利用辅助粒子填充所述反射粒子间的缝隙，填补了反射粒子之间的空隙，减小了光对反射层的入射深度，既保证了反射层较高的反射率，又实现了反射层厚度小，进而使得波长转换装置既有高的光利用率，又有良好的散热。
 附图说明
图 1 为本发明的波长转换装置的实施例一的结构示意图；
图 2 为本发明的波长转换装置的实施例二的结构示意图；
图 3 为本发明的波长转换装置的实施例三的结构示意图。
 本发明的实施方式
下面结合附图和实施方式对本发明实施例进行详细说明。为描述清楚，下文所描述的'上''下'均指的图中的上下。
实施例一
请参见图 1 ，图 1 为本发明的波长转换装置的实施例一的结构示意图，如图所示，波长转换装置 100 包括基板 130 、发光层 110 、反射层 120 。其中，反射层 120 包含反射粒子、辅助粒子和第一粘结剂，发光层 110 包含波长转换材料和第二粘结剂。
正如背景技术介绍的，发光层发出的光入射于反射层后，经反射返回发光层，发光层产生的热量经反射层传导至基板，然后发散出去。
波长转换装置 100 中，反射层 120 有两个功能，一是光反射，二是热量传导。反射层 120 需具有较高的反射率，以保证光利用率；反射层 120 还需具有良好的导热性，反射层越薄，其导热效果越好。
上述反射层 120 中，包含反射粒子、辅助粒子和第一粘结剂。其中，反射粒子是指具有高反射特性，尤其对 400~800nm 波长范围的可见光具有 90% 以上反射率的粒子，这些粒子的粒径在 2μm 内；具有这种特性的反射粒子可以是氧化铝、硫酸钡、氧化锌、氮化硼等。
辅助粒子是指具有良好遮盖能力，分散性好、不易团聚，从而能与反射粒子充分混合、弥散的粒子，该特性使得反射粒子能够充分铺开均匀、从而无需反射粒子太大厚度即可实现良好的反射率。单独由辅助粒子组成的反射层的反射率很低，不能满足反射层的功能要求，然而只需要添入相对于辅助粒子 20% 质量百分比的反射粒子，即可将辅助粒子层原本只有 80~85% 的反射率，提高到 95% 以上（反射层等厚情况下）。辅助粒子的粒径通常在 1μm 内，具有这种特性的辅助粒子可以是氧化钛等。
在本实施例中，反射粒子为氧化铝（ Al2O3 ），辅助粒子为氧化钛（ TiO2 ）。氧化铝对可见光有优良的反射率，纯的氧化铝层对可见光的反射率可达到 90% ，然而由于氧化铝各颗粒间的空隙大，光线会绕过氧化铝颗粒透射，因此需要堆叠较厚的氧化铝层才能够达到上述反射率，而氧化铝层厚度越大，层体的导热性能越差。氧化钛本身具有一定的反射率，尤其对波长大于 550nm 的光具有较好的反射率，然而氧化钛对波长小于 480nm 的光反射率不佳，不能满足反射层反射率的性能需求。将氧化铝和氧化钛后结合发现，该混合反射层极易成膜，氧化钛填补了氧化铝颗粒间的空隙，同时利用自身的反射特性保证从氧化铝颗粒之间部分穿过的光被反射回去。因此使得该混合层能够在较薄的厚度下达到较高的反射率。此外，氧化钛相对于氧化铝，与软化后的粘接剂（如玻璃粉）具有更好的浸润性，不易在内部形成封闭气泡。
在一种优选的实施方式中，该反射层的孔隙率小于 35% ，当反射层的孔隙率较大时，反射层呈一种松散的结构，其厚度大，且孔隙的导热率极低，从而导致整个反射层的导热效果不佳。
在反射层 120 中，当氧化铝的量过多或者氧化钛的量过少时，反射层 120 不够致密，其需要较厚的厚度才能达到足够的反射率；而当氧化铝过少或氧化钛的量过多时，光在反射层 120 的颗粒表面的反射率不够高，也无法达到所需的反射率。经实验证明，反射层 120 中的氧化铝的质量分数为 0.5~30% ，反射层 120 中的氧化钛的质量分数为 40~75% ，使得反射层既有良好的反射率，又有较薄的厚度。
在反射层 120 中，反射粒子的粒径越大，其反射性能越差，而反射粒子粒径越小，其越难分散、越容易团聚。与此同时，辅助粒子需根据反射粒子的粒径大小，与其相匹配才能达到填充减薄的功能，即辅助粒子与反射粒子的粒径大小相差较小。在一种优选的实施方式中，氧化铝的粒径为 0.01~1μm ，更优选地为 0.02~0.7μm ，氧化钛的粒径为 0.02~1μm ，更优选地为 0.2~0.5μm 。
本实施例中，反射层 120 厚度越大，反射层的热阻越大，本领域技术人员可以根据本发明的教导设定反射层 120 的厚度。在一种优选的实施方式中，反射层 120 的厚度大于 70μm ，对可见光的反射率大于 95% ，更优选地，反射层 120 的厚度在 30~70μm 之间，对可见光的反射率仍能大于 95% 。当反射层厚度超过 70 μ m 后，厚度对反射率的影响不明显，而当反射层厚度小于 20 μ m 时，反射率开始明显下降。本发明能够做到在保证反射率满足反射层功能正常的情况下，实现厚度薄从而实现反射层 120 热阻小，降低了材料成本、减小了光波长转换装置的质量。
本实施例的反射层 120 中，除反射粒子和辅助粒子，还包含第一粘结剂。第一粘结剂用于将反射粒子和辅助粒子粘结成层。由于反射粒子和辅助粒子本身不具有粘结性，即使能够拼接堆叠成层，但是在外力作用下或在运动中也会松散破坏，第一粘结剂的作用就在于将反射粒子和辅助粒子的结构固定。
在本实施例中，反射层 120 中的第一粘结剂为树脂或硅胶。树脂和硅胶受热变为流动性的半固体，可以渗透到反射粒子和辅助粒子形成的空隙中，并在反射粒子和辅助粒子的外围包覆成层。在一种优选的实施方式中，预先使用原硅酸乙酯对氧化钛进行表面处理，使其与硅胶或树脂的相容性更好，从而有利于硅胶或树脂对其的包覆；用硅烷偶联剂也可以达到同样的效果，硅烷偶联剂一端为有机基团，一端为无机，可以有效的连接氧化钛和硅胶。
本实施例中，发光层 110 包含波长转换材料和第二粘结剂，其中第二粘结剂为树脂或硅胶。由于发光层 110 和反射层 120 使用同类型的材料作为粘结剂，有利于二者的结合。第一粘接剂和第二粘接剂可以是相同的树脂或硅胶，也可以是不同的树脂或硅胶。
本实施例中，基板 130 为金属基板，可以是铜板、铝板或铝合金板，其能够耐受一定温度，并且导热性能优秀、机械加工方便，在低功率激光光源（＜ 50W ）工作条件下具有优良的性能。基板 130 也可以选择导热性好的陶瓷基板，相对于金属基板，陶瓷基板具有更好的耐热性能，能够适应中高功率激光光源的工作条件。
本发明实施例一的一个变形实施例如图 1 所示，其中，波长转换装置 100 的结构与实施例一相同，其区别在于，波长转换装置 100 中发光层 110 、反射层 120 和基板 130 的组成材料与实施例一中的不同。
本实施例中的反射层 120 中所含的第一粘结剂为第一玻璃粉。相对于树脂和硅胶，玻璃粉具有更好的耐热性，能够满足波长转换装置高温处理流程工艺的要求。在本实施例中，第一玻璃粉优选为 SiO2-B2O3-RO （ R 选自 Mg 、 Ca 、 Sr 、 Ba 、 Na 、 K 中的一种或多种）。该类玻璃粉具有优秀的光学性能，减少了光在反射层中传播时的损耗，从而减少了在反射层上产生的热量；此外，该类玻璃粉在高于软化点 200 ℃范围内的流动性不大，保证了反射层 120 在经历高温处理的工程中保持原来的平整形貌，不会因为玻璃液的流动而变形、起翘、鼓包等。
本实施例中，第一玻璃粉占反射层 120 总质量的 20~50% 。玻璃粉少于 20% 时，不足以包覆所有的反射粒子和辅助粒子，不利于反射层的粘结成型，而玻璃粉多于 50% 时，反射粒子和辅助粒子过于分散，不利于反射层对入射光的反射。
本实施例中，反射层 120 是由反射粒子、辅助粒子、第一玻璃粉和有机载体混合后烧结成型的。有机载体用于反射层浆料的配制，使反射粒子、辅助粒子和第一玻璃粉在液相中得到充分的混合与分散，同时使浆料具有一定的流动性，以便反射层在基板上的刷涂和成型。有机载体需满足对反射粒子、辅助粒子和第一玻璃粉的浸润性，此外有机载体必须是高温处理阶段被完全分解、排出。本实施例中的有机载体为乙基纤维素、萜品醇和丁基卡必醇的混合液，此外，有机载体还可以为硅油。经大量实验测试，乙基纤维素、萜品醇和丁基卡必醇的混合液或硅油具有良好的浸润性和分散性，此有机载体可以在 360~420 ℃下几乎完全分解排出，但是有可能有部分有机载体被包覆在反射粒子、辅助粒子和玻璃粉中无法排出，并在后续的高温处理过程中与反射粒子、辅助粒子或第一玻璃粉发生副反应，因此反射层中有部分有机载体残余物，其质量分数为 0.001~0.1% 。
本实施例中，发光层 110 中的第二粘结剂为第二玻璃粉。第二玻璃粉选择透明度高，光吸收率小，高导热率的玻璃粉。透明度高是为了便于光的射入和射出；光吸收率小是尽可能地减少光在发光层内多次反射后的损失；高热导率是利于热量的传导，降低发光层的工作温度。第二玻璃粉可以选择 SiO2-B2O3-RO 、 SiO2-TiO2-Nb2O5-R' 2O 、 ZnO-P2O5 中的一种或多种，其中 R 选自 Mg 、 Ca 、 Sr 、 Ba 、 Na 、 K 中的一种或多种， R' 选自 Li 、 Na 、 K 中的一种或多种。
本实施例中，反射层 120 中的第一粘结剂和发光层 110 中的第二粘结剂都选用玻璃粉，有利于两层的结合，同时也保证了波长转换装置 100 整体耐高温。
本实施例的发光层 110 中，波长转换材料所占的体积分数过大，第二玻璃粉所占的体积分数过小，会导致发光层不易粘结成层；而波长转换材料所占的体积分数过小，会导致其发光效率低。在本发明中，为兼顾发光层的发光效率和成型，波长转换材料占发光层的体积分数为 30~75% ，第二粘结剂占发光层的体积分数为 25~70% 。在一种优选的实施方式中，波长转换材料占发光层的体积分数为 35~55% ，第二粘结剂占发光层的体积分数为 45-65% 。
本实施例的发光层 110 为满足发光效率，需具有一定的厚度，使得光在发光层中的传播距离足以充分进行波长转换，但发光层 110 又不能太厚，否则其自身导热性差、散热差。在本实施例中，发光层 110 的厚度为 50~300μm 。
本实施例中，基板 130 为氮化铝陶瓷基板，其具有良好的导热性和机械强度，使其在高温下不分解、形变小，氮化铝与氧化钛和氧化铝的热膨胀系数差值小，而且氮化铝基板耐高温，能够适应中高功率的激光光源（＞ 100W ）。在本实施例中，基板 130 为流延法制备而成的，其相对密度大于 95% ，热导率大于 150W/mK 。此外，基板 130 还可以是氧化铝、碳化硅、氮化硅、氮化硼、氧化铍等陶瓷材料，该种材料的基板具有与氮化铝基板相同或相似的性能。
实施例二
请参见图 2 ，图 2 为本发明的波长转换装置的实施例二的结构示意图。本实施例波长转换装置 200 中的发光层 210 、反射层 220 和基板 230 与实施例一中的相同，本实施例不再赘述。与实施例一不同的是，如图 2 所示，该波长转换装置 200 还包括玻璃层 260 和增透膜 250 。
玻璃层 260 位于发光层 210 上，由第三玻璃粉组成。由于发光层 210 表面可能有少量波长转换材料颗粒突出，在这种表面上镀膜可能导致膜层凹凸不平，而若将发光层磨平抛光后镀膜，则有可能在磨平抛光过程中破坏发光层。纯玻璃极易磨平抛光，并得到平整光滑的表面，有利于镀膜的实现。由于玻璃层 260 过薄会导致层厚均匀性难以控制，而玻璃层 260 过厚会影响光的通透，经实验测量，厚度在 20~50μm 的玻璃层 260 既能保证均匀性又不影响光的通透（对光的透射影响小于 1% ）。
增透膜 250 位于玻璃层 260 上，用于减少界面的光反射，增强光的透射，可以有效的提高光利用率。增透膜的材料选择可以为 SiO2 或 MgF2 ，厚度为 50~150nm 。
本发明中，加入玻璃层 260 是一个优选的方案，也可以在发光层 210 上直接镀制增透膜 250 ，但是正如上文所述，这样直接镀膜可能导致膜层凹凸不平。
实施例三
请参见图 3 ，图 3 为本发明的波长转换装置的实施例三的结构示意图。本实施例波长转换装置 300 中的发光层 310 、反射层 320 和基板 330 与实施例一中的相同，本实施例不再赘述。与实施例一不同的是，本实施例还包括驱动装置 340 ，具体地，本实施例中的驱动装置 340 为一个马达。本实施中的基板 330 为一个圆形基板，承载圆环形的反射层 320 和发光层 310 。驱动装置 340 与基板 330 固定连接，当驱动装置 340 转动时，带动基板 330 和其上的反射层 320 和发光层 310 一同转动，从而避免激发光源的激发光长时间照射发光层上的一点而导致发光层 310 上的发光点处的波长转换材料淬灭。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (19)

  1. 一种波长转换装置，包括依次叠置的基板、反射层、发光层，其特征在于，
    所述反射层包含反射粒子、辅助粒子和第一粘结剂，所述反射粒子用于对光进行反射，所述辅助粒子用于填充所述反射粒子间的缝隙，所述第一粘结剂用于将反射粒子和辅助粒子粘结成层；
    所述发光层包含波长转换材料和第二粘结剂。
  2. 根据权利要求 1 所述的波长转换装置，其特征在于，所述反射粒子为氧化铝，所述辅助粒子为氧化钛。
  3. 根据权利要求 2 所述的波长转换装置，其特征在于，所述辅助粒子占所述反射层的质量分数为 40~75% ，所述反射粒子占所述反射层的质量分数为 0.5~30% 。
  4. 根据权利要求 2 所述的波长转换装置，其特征在于，所述氧化钛的粒径为 0.02~1 μ m ，所述氧化铝的粒径为 0.01~1 μ m ，优选地，所述氧化钛的粒径为 0.2~0.5 μ m ，所述氧化铝的粒径为 0.02~0.7 μ m 。
  5. 根据权利要求 2 所述的波长转换装置，其特征在于，所述反射层厚度小于 70 μ m ，所述反射层对可见光的反射率大于 95% ，优选地所述反射层厚度小于 30 μ m ，所述反射层对可见光的反射率大于 95% 。
  6. 根据权利要求 1 至 5 中任一项所述的波长转换装置，其特征在于，所述反射层的孔隙率小于 35% 。
  7. 根据权利要求 1 至 5 中任一项所述的波长转换装置，其特征在于，所述第一粘结剂为第一玻璃粉，所述第一玻璃粉占所述反射层的质量分数为 20~50% 。
  8. 根据权利要求 7 所述的波长转换装置，其特征在于，所述第一玻璃粉为 SiO2-B2O3-RO ，其中 R 选自 Mg 、 Ca 、 Sr 、 Ba 、 Na 、 K 中的一种或多种。
  9. 根据权利要求 7 所述的波长转换装置，其特征在于，所述反射层为通过将所述反射粒子、辅助粒子、第一玻璃粉和有机载体混合后烧结成型的，所述有机载体为乙基纤维素、萜品醇、丁基卡必醇三者的混合液或硅油，所述反射层中有机载体残余物的质量分数为 0.001%~0.1% 。
  10. 根据权利要求 7 所述的波长转换装置，其特征在于，所述第二粘结剂为第二玻璃粉，选自 SiO2-B2O3-RO 、 SiO2-TiO2-Nb2O5-R' 2O 、 ZnO-P2O5 中的一种或多种，其中 R 选自 Mg 、 Ca 、 Sr 、 Ba 、 Na 、 K 中的一种或多种， R' 选自 Li 、 Na 、 K 中的一种或多种。
  11. 根据权利要求 1 至 5 中任一项所述的波长转换装置，其特征在于，所述第一粘结剂为硅胶或树脂，所述辅助粒子为经偶联剂处理的氧化钛，所述偶联剂包括硅烷偶联剂、原硅酸乙酯。
  12. 根据权利要求 11 所述的波长转换装置，其特征在于，所述第二粘结剂为硅胶或树脂。
  13. 根据权利要求 1 、 10 或 12 所述的波长转换装置，其特征在于，所述波长转换材料占所述发光层的体积分数为 30~75% ，所述第二粘结剂占所述发光层的体积分数为 25~70% ，优选地所述波长转换材料占所述发光层的体积分数为 35~55% ，所述第二粘结剂占所述发光层的体积分数为 45-65% 。
  14. 根据权利要求 1 、 10 或 12 所述的波长转换装置，其特征在于，所述发光层厚度为 50~300μm 。
  15. 根据权利要求 2 所述的波长转换装置，其特征在于，所述基板为氮化铝基板；或
    所述基板为金属基板。
  16. 根据权利要求 1 至 5 中任一项所述的波长转换装置，其特征在于，还包括增透膜，位于所述发光层远离所述反射层的一侧。
  17. 根据权利要求 16 所述的波长转换装置，其特征在于，还包括玻璃层，由第三玻璃粉组成，位于所述发光层与所述增透膜之间。
  18. 根据权利要求 17 所述的波长转换装置，其特征在于，所述玻璃层的厚度为 20~50μm 。
  19. 一种发光装置，包括激发光源，其特征在于，还包括如权利要求 1 至 18 中任一项所述的波长转换装置。
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