WO2016008083A1 - Laser à émission par la surface - Google Patents

Laser à émission par la surface Download PDF

Info

Publication number
WO2016008083A1
WO2016008083A1 PCT/CN2014/082201 CN2014082201W WO2016008083A1 WO 2016008083 A1 WO2016008083 A1 WO 2016008083A1 CN 2014082201 W CN2014082201 W CN 2014082201W WO 2016008083 A1 WO2016008083 A1 WO 2016008083A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
distributed bragg
type
doped distributed
vcsel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/082201
Other languages
English (en)
Chinese (zh)
Inventor
吴波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Priority to CN201480080564.9A priority Critical patent/CN106575855B/zh
Priority to PCT/CN2014/082201 priority patent/WO2016008083A1/fr
Publication of WO2016008083A1 publication Critical patent/WO2016008083A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular to a vertical cavity surface emitting laser VCSEL. Background technique
  • interconnection is an important bottleneck limiting system performance.
  • the main carriers of inter-board and inter-frame signals are copper interconnections and optical interconnections.
  • the optical interconnections are superior to copper interconnections.
  • the former has advantages of high bandwidth, low loss, no crosstalk, and electromagnetic compatibility.
  • Single-core optical interconnects have been widely used, and large-capacity (large-bit-level) parallel multi-core optical interconnect technology has shown certain applications in inter-board, inter-frame, and short-haul interconnects. For the future, we refer to this large-capacity optical interconnect with a transmission distance within 300 m as a "short-range optical interconnect.”
  • VCSEL Vertical Cavity Surface Emitting Laser
  • surface-emitting laser has the following advantages compared with edge-emitting laser:
  • the characteristics of the monolithic growth of the VCSEL resonator determine that it does not suffer from mechanical damage, oxidation and contamination caused by device degradation during the manufacturing process;
  • the VCSEL Due to the small volume of the cavity, the VCSEL can form a low-value current lasing
  • the active area is built in to increase the life of the device
  • VCSELs are often used as light sources to achieve optical interconnection between frames.
  • the prior art VCSEL mainly includes the following two structures: an external mirror-assisted single transverse mode VCSEL and an oxide small aperture single mode VCSEL, wherein the external mirror assisted single transverse mode VCSEL has the advantage of implementing a single transverse mode LP01 (where LP is Linearly Polarized, line polarity)
  • LP01 where LP is Linearly Polarized, line polarity
  • the lasing mode but it requires additional complex manufacturing processes during the preparation process, such as the preparation of electrostatic mechanical arm fixed mirrors, etc., and the included microelectromechanical system mirrors are easy to prepare, process and post-process.
  • Oxidized, external mirror-assisted single transverse mode VCSEL complex process preparation process results in additional cost; oxide layer small aperture single mode VCSEL has the advantage of achieving single transverse mode LP01 lasing mode, but its smaller aperture area leads to The increase in series resistivity, in the case of the same drive current, a considerable part of the energy is lost by the resistance heat generation, which makes the small-cavity single-mode VCSEL of the oxide layer work in a higher self-heating state, resulting in a decrease in reliability, and Reduced output optical power.
  • the embodiment of the invention discloses a vertical cavity surface emitting laser VCSEL, which is used for solving the problems of high preparation cost, low reliability and small output optical power of the VCSEL in the prior art.
  • a first aspect of the embodiments of the present invention discloses a vertical cavity surface emitting laser VCSEL, the VCSEL includes a bottom-up epitaxial layer structure, and the bottom-up epitaxial layer structure includes an n-type doped electrode contact layer.
  • the set of n-doped distributed Bragg mirrors includes At least two layers of n-doped distributed Bragg mirrors, each of the n-doped distributed Bragg mirrors being composed of the same material having different metal composition values, and the bottom-up epitaxial layer structure is further
  • a third semiconductor buffer layer and an absorber layer are included, and the set
  • the third semiconductor buffer layer is between the set of p-type doped distributed Bragg mirrors and the absorbing layer, the absorbing layer is in the third semiconductor buffer layer and two of the p Between the contact points, the double oxide layer resonant leakage cavity is configured to concentrate the light field in the LP11 lasing mode in the double oxide layer resonant leakage cavity and reduce the LP11 excitation when the VCSEL is lasing Gain in shot mode to ensure that the LP01 lasing mode is the main lasing mode of the VCSEL, the absorbing layer is used Forming a ring fence for absorbing light energy in the LP11 lasing mode to ensure output optical power in the LP01 lasing mode, the first semiconductor buffer layer and the second semiconductor
  • the punch layer and the third semiconductor buffer layer are used to realize a transition between different metal compounds, the active layer is used to realize electro-optical conversion, and the two n-type contact points are used to connect the negative pole of the power supply, The p-type contact points are used to connect the positive
  • the set of p-type doped distributed Bragg mirrors includes P-type p-type doping distribution a Bragg mirror, and the material of the p-doped distributed Bragg mirror is aluminum gallium arsenide AlGaAs, and the P layer p-doped distributed Bragg mirror comprises two layers of first type p-type doping a distributed Bragg mirror and a (P-2) layer second type p-doped distributed Bragg mirror, the first type of p-type doped distributed Bragg mirror has a higher aluminum component value, The second type of p-type doped distributed Bragg mirror has a lower aluminum component value, the two layers of the first type of p-type doped distributed Bragg mirror and the L layer of the second type of p-type doping a distributed Bragg mirror constituting the double oxide layer resonant leakage cavity, the L layer second type p-doped distributed Bragg
  • the absorbing layer comprises a lattice matching absorbing layer
  • the material of the lattice matching absorbing layer is arsenic Gallium GaAs
  • the lattice matching absorption layer is etched into the annular barrier by a shallow etching technique
  • the thickness of the lattice matching absorption layer is an odd multiple of a quarter of a wavelength of the VCSEL lasing
  • the distance from the annular fence to the center is equal to the distance from the near-field spot of the LP11 to the center, and the width of the annular fence is greater than or equal to the diameter of the LP11 spot.
  • the material of the n-type doped distributed Bragg mirror is aluminum gallium argon AlGaAs
  • the A set of n-doped distributed Bragg mirrors is formed by alternately growing Al x Ga ⁇ As and AlyGa ⁇ As of different aluminum composition values, and the range of X and the y is greater than or equal to 0 and less than Equal to 1.
  • the material of the first semiconductor buffer layer is Al z G ai — z As, and the value of z is in an n-type doped distributed Bragg reflection adjacent to the first semiconductor buffer layer.
  • the active layer includes a multiple quantum well type active layer or a strained multiple quantum well type active layer.
  • the VCSEL comprises a bottom-up epitaxial layer structure, and a set of p-type doped distributed Bragg mirrors in the bottom-up epitaxial layer structure form a double oxide layer resonant leakage cavity for When the VCSEL is lasing, the light energy in the LP11 lasing mode is concentrated in the double oxide layer resonant leakage cavity and the gain in the LP11 lasing mode is reduced, thereby ensuring that the LP01 lasing mode is the main lasing mode of the VCSEL, and
  • the absorbing layer in the bottom-up epitaxial layer structure is used to form a ring-shaped barrier for absorbing the light energy in the LP11 lasing mode, thereby ensuring the output optical power in the LP01 lasing mode. It can be seen that the VCSEL in the embodiment of the present invention has a simple preparation process, high reliability, and improved output optical power.
  • FIG. 1 is a schematic structural view of a vertical section of a vertical cavity surface emitting laser VCSEL according to an embodiment of the present invention
  • FIG. 2 is a top plan view showing a cross section of a double oxide layer resonant leak cavity and a double oxide layer resonant leak cavity in a vertical cavity surface emitting laser VCSEL according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a vertical cross section of a double oxide layer resonant leakage cavity disclosed in an embodiment of the present invention
  • FIG. 4 is a top plan view showing a cross section of a ring fence according to an embodiment of the present invention
  • FIG. 5 is a schematic structural view of a vertical section of a vertical cavity surface emitting laser VCSEL disclosed in the prior art. detailed description
  • the embodiment of the invention discloses a vertical cavity surface emitting laser VCSEL, which has simple preparation process, high reliability and improved output optical power.
  • FIG. 1 is a schematic structural diagram of a vertical cross section of a vertical cavity surface emitting laser VCSEL according to an embodiment of the present invention.
  • the VCSEL includes a bottom-up epitaxial layer structure, and the bottom-up epitaxial layer structure may include an n-type doped electrode contact layer 101, an n-type doped gallium arsenide GaAs substrate 103, a set of n-doped distributed Bragg mirrors 104, a first semiconductor buffer layer 105, an active layer 106, a second semiconductor buffer layer 107, a set of p-doped distributed Bragg mirrors 108, Three semiconductor buffer layers 109, an absorbing layer 110, and two p-type contact points (1201 and 1202 as shown in FIG.
  • a set of n-doped distributed Bragg mirrors 104 includes at least two layers of n-doped distributed Bragg mirrors, each layer of n-doped distributed Bragg The mirror is composed of the same material having different metal component values, and a set of p-doped distributed Bragg mirrors 108 includes a double oxide layer resonant leak cavity 1081, wherein:
  • the double oxide layer resonant leakage cavity 1081 is used to concentrate the light energy in the LP11 lasing mode in the double oxide layer resonant leakage cavity 1081 when the VCSEL is lasing and reduce the gain in the LP11 lasing mode to ensure that the LP01 lasing mode is
  • the main lasing mode of the VCSEL, the absorbing layer 110 is used to form the annular barrier 1101, and the annular barrier 1101 is used to absorb the light energy in the LP11 lasing mode to ensure the output optical power in the LP01 lasing mode, the first semiconductor buffer layer 105.
  • the second semiconductor buffer layer 107 and the third semiconductor buffer layer 109 are used to realize a transition between different metal compounds, and the active layer 106 is used to realize electro-optical conversion, two n-type contact points (as shown in FIG. 1). 1021 and 1022) are used to connect the negative pole of the power supply, and two p-type contact points (1201 and 1202 as shown in Fig. 1) are used to connect the positive pole of the power supply.
  • FIG. 2 is a structural plan view of a cross section of a double oxide layer resonant leakage cavity and a double oxide layer resonant leakage cavity in a vertical cavity surface emitting laser VCSEL according to an embodiment of the present invention.
  • Schematic diagram, as shown in Figure 2 from the outside to the inside is HR-L High Resistivity-Low Refractive Index, high resistivity low refractive index structure, double oxide aperture, and ring fence, where the LP11 lasing mode spot (LP11 spot shown in Figure 2) is confined within the ring fence, vertical cavity surface emission
  • the laser that is ultimately emitted by the laser VCSEL is formed by the LP01 spot in Fig. 2.
  • a set of p-type doped distributed Bragg mirrors 108 includes a P-layer p-doped distributed Bragg mirror, and the material of the p-doped distributed Bragg mirror is Aluminum gallium arsenide AlGaAs, wherein the P layer p-doped distributed Bragg mirror comprises two first-type p-type doped distributed Bragg mirrors and (P-2) layer second type p-type doped Distributed Bragg mirrors, the first type of p-doped distributed Bragg mirrors have higher aluminum composition values, and the second type of p-type doped distributed Bragg mirrors have lower aluminum composition values, two layers a first type of p-doped distributed Bragg mirror and an L-layer second type p-doped distributed Bragg mirror (wherein the L-layer second type p-doped distributed Bragg mirror is in two Between the first type of p-type doped distributed Bragg mirrors, a double oxide layer resonant leakage cavity 1081 is formed, as shown
  • FIG. 3 is a double oxide layer resonant leakage cavity disclosed in an embodiment of the present invention.
  • Two p-doped distributed Bragg mirrors with higher aluminum composition values ie two layers of first-type p-doped distributed Bragg mirrors
  • HR-LI high resistivity-low refraction after oxidation process Rate
  • P is an even number greater than 2
  • L is an integer greater than or equal to 1 and less than or equal to (P-2)
  • HR-LI high resistivity-low refractive index
  • the pore size of the structure of -LI is called the double oxide pore size, the refractive index of the double oxide layer is high, and the laser light field is confined within the double oxide pore size.
  • a set of p-type doped distributed Bragg mirrors 108 includes two layers of p-doped distributed Bragg mirrors with higher aluminum component values (ie, two layers of the first type of p-type doping).
  • a heterogeneous distributed Bragg mirror), and a two-layered p-doped distributed Bragg mirror with a higher aluminum component value generally has an aluminum component value greater than 0.96, such as Al. . 96 Gao.
  • the heterogeneous distributed Bragg mirror (ie, the L-layer second type p-doped distributed Bragg mirror) constitutes a double oxide layer resonant leakage cavity 1081, as shown in FIG. 3, the double oxide layer resonant leakage cavity is double
  • the vertical length around the oxide aperture is L SMrounding and the vertical length of the double oxide aperture is! ⁇ , their calculation formulas can be as follows:
  • n. Xide represents the refractive index of the oxide layer
  • d. Xide denotes the thickness of the single oxide layer
  • nA! GaAs denotes the refractive index of a single-layer p-doped distributed Bragg mirror between two p-doped distributed Bragg mirrors with higher aluminum component values.
  • dA!o ⁇ represents the thickness of a single-layer p-doped distributed Bragg mirror in the middle of a p-doped distributed Bragg mirror with a higher aluminum component value
  • M represents a double oxide layer resonant leak cavity 1081
  • ⁇ represents the LP11 of the VCSEL In the lasing mode
  • K 2 are positive integers.
  • M, and K 2 make equation (1) and formula (2) hold, so that when VCSEL is lasing, the light energy in LP11 lasing mode is concentrated in the double oxide layer resonant cavity 1081, LP11 The spatial coincidence of the shot mode with the active layer 106 is reduced, which greatly reduces the gain obtained by the LP11 lasing mode to ensure that the LP01 lasing mode is the main lasing mode of the VCSEL.
  • the absorption layer 110 may include a lattice matching absorption layer, the material of the lattice matching absorption layer is gallium arsenide GaAs, and the lattice matching absorption layer may be etched into a circular fence by a shallow etching technique.
  • the thickness of the lattice matching absorption layer is an odd multiple of a quarter of the VCSEL lasing wavelength
  • the distance from the ring fence 1101 to the center is equal to the distance from the near field spot of the LP11 to the center
  • the width of the ring fence 1101 is greater than or equal to the LP11
  • the diameter of the spot is to ensure that the light energy in the LP11 lasing mode is absorbed by the ring fence to the maximum extent, as shown in FIG. 4, and FIG. 4 is a schematic top view of the cross section of the ring fence disclosed in the embodiment of the present invention.
  • the double oxide layer resonant leakage cavity 1081 ensures that the LP01 lasing mode is the main lasing mode of the VCSEL, but as the modulation current increases, the modulating current gradually increases to the lasing of the LP11 lasing mode. After the threshold, the intensity of the light field in the LP11 lasing mode increases rapidly. Although the intensity of the light field in the LP01 lasing mode increases, the side mode suppression ratio of the LP01/LP11 decreases. Based on this, the top layer of the VCSEL A lattice matching absorption layer is grown. When the lasing wavelength is 850 nm, the composition of the lattice matching absorption layer can be gallium arsenide GaAs.
  • the gallium arsenide GaAs has a strong absorption effect on the light near the 850 nm band.
  • the lattice-matched absorption layer composed of gallium arsenide GaAs can be used as an ideal absorption layer.
  • a set of p-type doped fractions A third semiconductor buffer layer 109 is grown over the Bragg mirror 108 to achieve a transition from aluminum to component.
  • the lattice matching absorption layer can etch a circular barrier 1101 by shallow etching. The shallow etching technique means that the etching depth is just enough to penetrate the lattice matching absorption layer.
  • the light field in the LP01 lasing mode is mainly concentrated in the aperture enclosed by the ring fence 1101, while the light field in the LP11 lasing mode is mainly concentrated in the ring fence 1101, since the gallium arsenide GaAs has a very high light for the 850 nm band accessory. Strong absorption, so when the light field in the LP11 lasing mode reaches the ring fence 1101, a large part of the light will be absorbed and lost, and only a small part of the light will be reflected into the double oxide layer resonant cavity 1081.
  • the function of the ring fence 1101 is as follows: Firstly, the transmission power in the LP11 lasing mode is greatly reduced by the absorption function, and the LPO 1/ can be maximized even when the LP11 is lasing even under high current conditions.
  • the side mode suppression ratio of LP11; the second is to greatly increase the lasing current threshold of the LP11 lasing mode, and to ensure that the LP11 mode is not lasing as much as possible from the source.
  • the material of the n-type doped distributed Bragg mirror is aluminum gallium arsenide AlGaAs
  • a set of n-type doped distributed Bragg mirrors 104 may comprise N layers composed of different aluminum components.
  • the values of Al x Ga ⁇ As and AlyGa ⁇ As are alternately grown.
  • the aluminum gallium arsenide AlGaAs with high aluminum composition has a high refractive index
  • the aluminum gallium arsenide AlGaAs with low aluminum composition has a low refractive index, wherein x and y are taken.
  • the value range is greater than or equal to 0 and less than or equal to 1, and N is an even number greater than zero.
  • a set of n-type doped distributed Bragg mirrors 104 may have an effective thickness of each layer of n-type doped distributed Bragg mirrors that may be four quarters of a VCSEL lasing wavelength (eg, 850 nm). First, this ensures that each layer of n-doped distributed Bragg mirrors does not form a separate resonant cavity.
  • the material of the first semiconductor buffer layer 105 is Al z G ai — z As, and the value of z may be distributed in the n-type doping adjacent to the first semiconductor buffer layer 105 .
  • the value of the aluminum component in the Bragg mirror and the value of the aluminum component in the active layer 106 are assumed that the aluminum component value of the n-type doped distributed Bragg mirror adjacent to the first semiconductor buffer layer 105 is 0.2 and the aluminum component value in the active layer 106 is 0.9, then the value range of z should be between 0.2 and 0.9 (such as 0.55, etc.) to achieve the transition between different metal compounds, thereby achieving a continuous lattice structure matching.
  • the active layer 106 may include a multiple quantum well type active layer or a strained multiple quantum well type active layer or the like, which is not limited in the embodiment of the present invention.
  • the active layer 106 when VCSEL When the lasing wavelength is 850 nm, the active layer 106 may be a multiple quantum well type active layer composed of gallium arsenide GaAs/aluminum gallium argon AlGaAs, or the constituent material may be indium gallium hydride Ii ⁇ Ga ⁇ As/ The strained multi-quantum well type active layer of aluminum gallium arsenide Al y Ga 1-y As is not limited in the embodiment of the present invention.
  • the material of the n-doped electrode contact layer 101 may be any one of gold-plated gold AuGe, nickel Ni, and gold Au, which is not limited in the embodiment of the present invention.
  • the principle of the Distributed Bragg Reflector is to rely on two layers of high and low refractive index materials (such as Al x G ⁇ x As/Al y Ga As, x, y are A value greater than or equal to 0 and less than or equal to 1 constitutes a periodic structure of a plurality of pairs (eg, P/2 pairs and N/2 pairs) such that the reflectance of the distributed Bragg mirror reaches 99.5% or more, and a set of p-types
  • the number of layers N is determined by the difference in refractive indices of two similar materials with different metal component values between high and low refractive index phases. The higher the difference in refractive index between two similar materials with different metal component values, the distributed The number of layers (P layer and
  • the principle of illumination of the VCSEL in the embodiment of the present invention is the same as that of other lasers.
  • the VCSEL After the two p-type contacts are connected to the positive pole of the power supply and the two n-type contacts are connected to the negative pole of the power supply, the VCSEL only needs to satisfy the following two conditions.
  • Laser lasing can be realized: 1. Particle number inversion process: There is a population inversion in the active layer 106. When the gain provided by the laser medium is enough to exceed the loss, when there is current injection, the light intensity will continue.
  • Double Oxide Resonant Leakage Cavity Select a laser of a certain frequency and direction in the laser generated by the active layer 106 and preferentially amplify the selected laser to suppress laser light of other frequencies and directions, such as laser light field (LP01 lasing mode)
  • the lower laser light field and the laser light field in the LP11 lasing mode are limited to the dioxygen shown in Figure 2 or as shown in Figure 3.
  • the pore size layer is limited to the dioxygen shown in Figure 2 or as shown in Figure 3.
  • the annular barrier 1101 formed by the absorbing layer greatly reduces the LP11 lasing mode by absorbing the laser light field in the LP11 lasing mode.
  • FIG. 5 is a schematic structural diagram of a vertical section of a vertical cavity surface emitting laser VCSEL disclosed in the prior art.
  • the prior art discloses a A vertical cavity surface emitting laser VCSEL may include an n-type doped electrode contact layer 501, an n-type doped gallium arsenide GaAs substrate 503, and a set of n-doped distributed Bragg mirrors 504 from bottom to top.
  • the vertical cavity surface emitting laser VCSEL disclosed in the embodiment of the present invention includes a bottom-up epitaxial layer structure, and a set of p-type doping in the bottom-up epitaxial layer structure.
  • the heterogeneous distributed Bragg mirror forms a double oxide resonant leakage cavity to concentrate the light energy in the LP11 lasing mode in the double oxide resonant cavity and reduce the gain in the LP11 lasing mode when the VCSEL is lasing.
  • the LP01 lasing mode is guaranteed to be the main lasing mode of the VCSEL, and the absorbing layer in the bottom-up epitaxial layer structure is used to form a ring fence, and the ring fence is used to absorb the light energy in the LP11 lasing mode, thereby ensuring The output optical power in the LP01 lasing mode, in addition, the third semiconductor buffer layer 109 in FIG. 1 is used to achieve a transition between different metal compounds to match the absorbing layer 110 and adjacent to the third semiconductor buffer layer 109. A layer of p-type doped distributed Bragg reflector. It can be seen that the VCSEL in the embodiment of the present invention has a simple preparation process, high reliability, and improved output optical power.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser à émission par la surface (laser VCSEL), comprenant une structure de couche épitaxiale ascendante ; un groupe de réflecteurs de Bragg distribués à dopage de type P dans la structure de couche épitaxiale ascendante qui forme une cavité de fuite de résonance à double couche d'oxyde de telle sorte que l'énergie lumineuse est concentrée dans la cavité de fuite de résonance à double couche d'oxyde dans un mode d'émission laser LP11 lorsque le laser VCSEL émet des faisceaux laser, et le gain est réduit dans le mode d'émission laser LP11, garantissant ainsi que le mode d'émission laser LP01 est le mode d'émission laser principal du laser VCSEL ; une couche d'absorption dans la structure de couche épitaxiale ascendante qui est utilisée pour former une barrière annulaire destinée à absorber l'énergie lumineuse dans le mode d'émission laser LP11, ce qui permet de garantir une puissance de lumière de sortie dans le mode d'émission laser LP01. Par conséquent, le laser VCSEL selon un mode de réalisation présente un procédé de fabrication simple et une fiabilité élevée, et améliore la puissance de lumière de sortie.
PCT/CN2014/082201 2014-07-15 2014-07-15 Laser à émission par la surface Ceased WO2016008083A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201480080564.9A CN106575855B (zh) 2014-07-15 2014-07-15 一种垂直腔面发射激光器vcsel
PCT/CN2014/082201 WO2016008083A1 (fr) 2014-07-15 2014-07-15 Laser à émission par la surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2014/082201 WO2016008083A1 (fr) 2014-07-15 2014-07-15 Laser à émission par la surface

Publications (1)

Publication Number Publication Date
WO2016008083A1 true WO2016008083A1 (fr) 2016-01-21

Family

ID=55077794

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/082201 Ceased WO2016008083A1 (fr) 2014-07-15 2014-07-15 Laser à émission par la surface

Country Status (2)

Country Link
CN (1) CN106575855B (fr)
WO (1) WO2016008083A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11456575B2 (en) 2017-08-28 2022-09-27 Lumentum Operations Llc Distributed oxide lens for beam shaping
TWI802581B (zh) * 2017-08-28 2023-05-21 美商盧曼頓運作有限公司 在垂直腔表面發射雷射控制光束發散度

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110495061B (zh) * 2018-02-06 2020-11-27 华为技术有限公司 一种垂直腔面发射激光器
CN109038217B (zh) * 2018-10-31 2024-04-26 厦门乾照半导体科技有限公司 延长使用寿命的vcsel芯片及制作方法和电子器件
US11549799B2 (en) * 2019-07-01 2023-01-10 Apple Inc. Self-mixing interference device for sensing applications
CN111129952B (zh) * 2019-12-25 2020-12-22 长春理工大学 非对称环形结构上分布布拉格反射镜垂直腔面发射半导体激光器
CN118920272A (zh) * 2020-11-25 2024-11-08 上海禾赛科技有限公司 谐振腔、激光单元及芯片和激光器及形成方法、激光雷达
CN119231312A (zh) * 2023-06-29 2024-12-31 璟芯光子科技(大连)有限公司 面射型激光芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1092210A (zh) * 1993-09-28 1994-09-14 吉林大学 钨丝做掩膜二次质子轰击垂直腔面发射激光器
CN1198265A (zh) * 1995-09-29 1998-11-04 英国电讯公司 光学谐振结构
CN1395344A (zh) * 2001-07-03 2003-02-05 扎尔林克半导体有限公司 利用一非对称光限制孔控制偏振的vcsels
US20090296754A1 (en) * 2006-06-16 2009-12-03 Vi Systems Gmbh Optoelectric Device for High-Speed Data Transfer with Electrooptically Tunable Stopband Edge of a Bragg-Reflector
CN101667715A (zh) * 2008-09-03 2010-03-10 中国科学院半导体研究所 一种单模高功率垂直腔面发射激光器及其制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6931042B2 (en) * 2000-05-31 2005-08-16 Sandia Corporation Long wavelength vertical cavity surface emitting laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1092210A (zh) * 1993-09-28 1994-09-14 吉林大学 钨丝做掩膜二次质子轰击垂直腔面发射激光器
CN1198265A (zh) * 1995-09-29 1998-11-04 英国电讯公司 光学谐振结构
CN1395344A (zh) * 2001-07-03 2003-02-05 扎尔林克半导体有限公司 利用一非对称光限制孔控制偏振的vcsels
US20090296754A1 (en) * 2006-06-16 2009-12-03 Vi Systems Gmbh Optoelectric Device for High-Speed Data Transfer with Electrooptically Tunable Stopband Edge of a Bragg-Reflector
CN101667715A (zh) * 2008-09-03 2010-03-10 中国科学院半导体研究所 一种单模高功率垂直腔面发射激光器及其制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11456575B2 (en) 2017-08-28 2022-09-27 Lumentum Operations Llc Distributed oxide lens for beam shaping
TWI802581B (zh) * 2017-08-28 2023-05-21 美商盧曼頓運作有限公司 在垂直腔表面發射雷射控制光束發散度

Also Published As

Publication number Publication date
CN106575855A (zh) 2017-04-19
CN106575855B (zh) 2019-05-28

Similar Documents

Publication Publication Date Title
WO2016008083A1 (fr) Laser à émission par la surface
JP4919639B2 (ja) 面発光レーザ素子および面発光レーザアレイおよび面発光レーザ素子の製造方法および面発光レーザモジュールおよび電子写真システムおよび光通信システムおよび光インターコネクションシステム
AU2006285426B2 (en) Optical phase conjugation laser diode
CN101764354B (zh) 基于一维光子晶体的多波长垂直腔面发射激光器及制备方法
CN102013633A (zh) 桥式-纳米光栅可调谐垂直腔面发射激光器及其制备方法
JP2010232424A (ja) 半導体光増幅装置及び光モジュール
JP5190038B2 (ja) 面発光レーザ
JP4614040B2 (ja) 面発光型半導体レーザおよびその製造方法
US7907653B2 (en) Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array
JPH0555713A (ja) 半導体発光素子
KR100950263B1 (ko) 마이크로렌즈를 포함한 단일모드 수직 공진식표면발광레이저 및 그 제조방법
CN118448988A (zh) 一种电泵浦拓扑腔面发射激光器及激光器阵列
CN115663595A (zh) 一种多结垂直腔面发射激光器
CN110676689A (zh) 一种垂直腔面发射半导体激光器及其制备方法
CN110289552A (zh) 基于亚波长光栅波导的高光束质量垂直腔面激光器阵列与制备方法
CN118174140B (zh) 一种晶圆融合集成多结长波长面发射激光器及制作方法
CN112103767A (zh) 一种垂直腔面发射激光器及其制备方法
CN117791305B (zh) 一种具有横向结构的垂直腔表面发射激光器及其制造方法
CN102611001A (zh) 一种优化光子晶体面发射激光器方法
CN117458266A (zh) 腔内接触的高速光子-光子共振面发射激光器
CN110495061B (zh) 一种垂直腔面发射激光器
CN116646817A (zh) 一种垂直腔面发射激光器及其制备方法
JP2015090880A (ja) 面発光レーザ素子、レーザ素子アレイ、光源および光モジュール
JP2014165222A (ja) 長波長帯面発光レーザ
CN114976865A (zh) 一种带高对比度光栅的高效垂直腔面eml芯片

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14897622

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14897622

Country of ref document: EP

Kind code of ref document: A1