WO2016096101A3 - Gleichstromschaltvorrichtung und verfahren zur steuerung - Google Patents

Gleichstromschaltvorrichtung und verfahren zur steuerung Download PDF

Info

Publication number
WO2016096101A3
WO2016096101A3 PCT/EP2015/002450 EP2015002450W WO2016096101A3 WO 2016096101 A3 WO2016096101 A3 WO 2016096101A3 EP 2015002450 W EP2015002450 W EP 2015002450W WO 2016096101 A3 WO2016096101 A3 WO 2016096101A3
Authority
WO
WIPO (PCT)
Prior art keywords
switching element
switching
switched
direct current
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2015/002450
Other languages
English (en)
French (fr)
Other versions
WO2016096101A2 (de
Inventor
Gerhard Steiner
Alexander Kaiser
Peter Jaenker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Airbus Defence and Space GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Airbus Defence and Space GmbH filed Critical Airbus Defence and Space GmbH
Publication of WO2016096101A2 publication Critical patent/WO2016096101A2/de
Publication of WO2016096101A3 publication Critical patent/WO2016096101A3/de
Priority to US15/618,099 priority Critical patent/US10263611B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0009—AC switches, i.e. delivering AC power to a load

Landscapes

  • Power Conversion In General (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Die vorliegende Anmeldung betrifft eine Gleichstromschaltvorrichtung (Fig. 1) mit zumindest einer Schalteinheit (10 a mit 8a, 9a und 10b mit 8b, 9b), die zwischen zwei Anschlüssen () angeordnet ist. Weiterhin kann die Vorrichtung zumindest eine Steuereinheit zum Steuern der Schalteinheit aufweisen. Die Schalteinheit kann zumindest ein erstes (8a, 8b) und ein zweites (9a, 9b) Halbleiter-Schaltelement umfassen, die parallel zueinander angeordnet sein können, wobei das erste Schaltelement ein Hochspannungsschaltelement sein kann und das zweite Schaltelement ein verlustleistungsarmes Schaltelement sein kann. Die Schalteinheit kann derart von der Steuereinheit steuerbar sein, dass bei einem Ausschalten der Schalteinheit zuerst das zweite Schaltelement nicht leitend geschaltet werden kann und danach das erste Schaltelement nicht leitend geschaltet werden kann, und bei einem Einschalten der Schalteinheit zuerst das erste Schaltelement leitend geschaltet werden kann und danach das zweite Schaltelement leitend geschaltet werden kann.
PCT/EP2015/002450 2014-12-18 2015-12-04 Gleichstromschaltvorrichtung und verfahren zur steuerung Ceased WO2016096101A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/618,099 US10263611B2 (en) 2014-12-18 2017-06-08 DC switching device and method of control

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014226475.8A DE102014226475B3 (de) 2014-12-18 2014-12-18 Gleichstromschaltvorrichtung und Verfahren zur Steuerung
DE102014226475.8 2014-12-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/618,099 Continuation US10263611B2 (en) 2014-12-18 2017-06-08 DC switching device and method of control

Publications (2)

Publication Number Publication Date
WO2016096101A2 WO2016096101A2 (de) 2016-06-23
WO2016096101A3 true WO2016096101A3 (de) 2016-08-11

Family

ID=54883979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2015/002450 Ceased WO2016096101A2 (de) 2014-12-18 2015-12-04 Gleichstromschaltvorrichtung und verfahren zur steuerung

Country Status (3)

Country Link
US (1) US10263611B2 (de)
DE (1) DE102014226475B3 (de)
WO (1) WO2016096101A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014226475B3 (de) 2014-12-18 2016-05-12 Airbus Defence and Space GmbH Gleichstromschaltvorrichtung und Verfahren zur Steuerung
EP3539215B1 (de) * 2016-11-14 2020-01-22 ABB Schweiz AG Schaltung von parallelem, rückwärts leitendem igbt und schalter mit grosser bandbreite
DE102017105712B4 (de) 2017-03-16 2025-05-22 Infineon Technologies Austria Ag Transistorbauelement
US11101634B2 (en) 2018-09-27 2021-08-24 Apple Inc. Prevention and detection of overheating from component short circuits
GB2617604A (en) * 2022-04-13 2023-10-18 Eaton Intelligent Power Ltd Bidirectional power semiconductor switch
CN114825879B (zh) * 2022-06-06 2026-03-06 重庆平创半导体研究院有限责任公司 一种半导体开关组件及其控制方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0443155A1 (de) * 1990-02-17 1991-08-28 Jungheinrich Aktiengesellschaft Schaltgerät zur Ein- und Ausschaltung
JP2009081969A (ja) * 2007-09-27 2009-04-16 Fuji Electric Holdings Co Ltd 双方向スイッチ
EP2124340A2 (de) * 2008-05-21 2009-11-25 Honeywell International Inc. Verfahren zum Schalten und Schaltvorrichtung für Halbleiter-Leistungssteueranwendungen
US20110002073A1 (en) * 2008-09-02 2011-01-06 Panasonic Corporation Output buffer circuit and output buffer system
EP2369744A1 (de) * 2010-03-26 2011-09-28 Hamilton Sundstrand Corporation Fernversorgungsregelung mit parallelen FETs
DE102012207222A1 (de) * 2011-05-02 2012-11-08 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung mit einer Mehrzahl parallel geschalteter Schaltelemente

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4034845A1 (de) * 1990-11-02 1992-05-07 Bayerische Motoren Werke Ag Schaltanordnung in kraftfahrzeugen zum getakteten einschalten von induktiven verbrauchern
GB2277215B (en) * 1993-04-16 1997-04-23 Marconi Gec Ltd A power control switch
JP2009142070A (ja) * 2007-12-06 2009-06-25 Fuji Electric Systems Co Ltd 電力用半導体素子のゲート駆動方式
US8059378B2 (en) * 2009-01-08 2011-11-15 Honeywell International Inc. Methods of improving the lightning immunity for an SSPC based aircraft electric power distribution system
US8351231B2 (en) * 2010-02-05 2013-01-08 Panasonic Corporation Power conversion device
US8830711B2 (en) * 2010-08-10 2014-09-09 Virginia Tech Intellectual Properties, Inc. Hybrid switch for resonant power converters
US8553373B2 (en) * 2011-08-25 2013-10-08 Hamilton Sundstrand Corporation Solid state power controller for high voltage direct current systems
JP5932269B2 (ja) * 2011-09-08 2016-06-08 株式会社東芝 パワー半導体モジュール及びパワー半導体モジュールの駆動方法
DE102014226475B3 (de) 2014-12-18 2016-05-12 Airbus Defence and Space GmbH Gleichstromschaltvorrichtung und Verfahren zur Steuerung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0443155A1 (de) * 1990-02-17 1991-08-28 Jungheinrich Aktiengesellschaft Schaltgerät zur Ein- und Ausschaltung
JP2009081969A (ja) * 2007-09-27 2009-04-16 Fuji Electric Holdings Co Ltd 双方向スイッチ
EP2124340A2 (de) * 2008-05-21 2009-11-25 Honeywell International Inc. Verfahren zum Schalten und Schaltvorrichtung für Halbleiter-Leistungssteueranwendungen
US20110002073A1 (en) * 2008-09-02 2011-01-06 Panasonic Corporation Output buffer circuit and output buffer system
EP2369744A1 (de) * 2010-03-26 2011-09-28 Hamilton Sundstrand Corporation Fernversorgungsregelung mit parallelen FETs
DE102012207222A1 (de) * 2011-05-02 2012-11-08 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung mit einer Mehrzahl parallel geschalteter Schaltelemente

Also Published As

Publication number Publication date
WO2016096101A2 (de) 2016-06-23
US20170346478A1 (en) 2017-11-30
US10263611B2 (en) 2019-04-16
DE102014226475B3 (de) 2016-05-12

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