WO2016132746A1 - SUBSTRAT À COUCHES MINCES, DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION ASSOCIÉ, APPAREIL DE DÉPÔT, PROCÉDÉ DE DÉPÔT ET GABARIT GaN - Google Patents

SUBSTRAT À COUCHES MINCES, DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION ASSOCIÉ, APPAREIL DE DÉPÔT, PROCÉDÉ DE DÉPÔT ET GABARIT GaN Download PDF

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WO2016132746A1
WO2016132746A1 PCT/JP2016/000895 JP2016000895W WO2016132746A1 WO 2016132746 A1 WO2016132746 A1 WO 2016132746A1 JP 2016000895 W JP2016000895 W JP 2016000895W WO 2016132746 A1 WO2016132746 A1 WO 2016132746A1
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substrate
layer
buffer layer
cubic
plate surface
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Japanese (ja)
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天野　浩
本田　善央
正 光成
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Nagoya University NUC
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Definitions

  • the technical field of this specification relates to a thin film substrate, a semiconductor device, a manufacturing method, a film forming device, a film forming method, and a GaN template for forming a buffer layer having a crystal structure different from that of the substrate on the substrate.
  • a III-group nitride semiconductor represented by GaN has a high breakdown field strength and a high melting point. Therefore, group III nitride semiconductors are expected as materials for semiconductor devices for high output, high frequency, and high temperature, replacing GaAs semiconductors. Therefore, a HEMT device using a III-group nitride semiconductor has been researched and developed. In addition, Group III group nitride semiconductors are also applied to light emitting devices.
  • III group III nitride semiconductor has a hexagonal crystal structure represented by wurtzite type. For this reason, a hexagonal crystal substrate is generally used as the growth substrate.
  • An example of such a hexagonal substrate is a sapphire substrate.
  • a Si (111) substrate may be used as a growth substrate.
  • the Si (111) substrate has a structure close to a hexagonal crystal.
  • the Si substrate a large-diameter substrate can be manufactured with high quality at low cost. Therefore, it is industrially significant to grow a III-group nitride semiconductor on a Si substrate.
  • the Si (001) substrate is a cubic substrate.
  • Si atoms are arranged in a square shape. It is not easy to grow a hexagonal III-V nitride semiconductor on such a cubic Si (001) substrate. Needless to say, the crystal structures of the cubic and hexagonal crystals are greatly different.
  • Si (001) substrates are generally less expensive than Si (111) substrates. Further, Si (001) substrates having a larger diameter than Si (111) substrates are industrially produced. Therefore, it is industrially meaningful to establish a technique for growing a group III group nitride semiconductor on a Si (001) substrate.
  • the technology of this specification has been made to solve the problems of the conventional technology described above.
  • the problem is to provide a thin film substrate and a semiconductor device for forming a hexagonal buffer layer on a cubic substrate, a manufacturing method thereof, a film forming device and a film forming method, and a GaN template.
  • the thin film substrate in the first aspect includes a substrate and a buffer layer on the substrate.
  • the substrate is a cubic substrate.
  • the buffer layer is hexagonal.
  • the c-axis of the buffer layer faces the first direction at a rate of 50% or more.
  • the first direction is inclined within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate.
  • This thin film substrate is obtained by forming a hexagonal thin film on a cubic substrate typified by a large-diameter Si (001) substrate. 50% or more of the c-axis of the buffer layer faces a specific direction over the entire plate surface of the substrate. In other words, at any position on the substrate, 50% or more of the c-axis of the buffer layer faces the specific direction. Therefore, a single crystal of a Group III nitride semiconductor can be epitaxially grown on the buffer layer.
  • the cubic substrate is a Si (001) substrate.
  • the first direction is within a range of 30 ° or less in the in-plane rotation direction with respect to the [110] direction of the plate surface of the substrate or a direction equivalent to the [110] direction.
  • the thin film substrate in the fourth aspect has an intermediate layer on the buffer layer.
  • the intermediate layer is hexagonal.
  • the intermediate layer has a superlattice layer.
  • the semiconductor device includes a substrate, a buffer layer on the substrate, and a group III group nitride semiconductor layer on the buffer layer.
  • the substrate is a cubic substrate.
  • the buffer layer is hexagonal.
  • the c-axis of the buffer layer faces the first direction at a rate of 50% or more.
  • the first direction is inclined within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate.
  • the c-axis of the group III group nitride semiconductor layer is inclined within a range of 0 ° to 5 ° with respect to the first direction in both the direction perpendicular to the plate surface of the substrate and the in-plane direction.
  • the cubic substrate is a Si (001) substrate.
  • the first direction is within a range of 30 ° or less in the in-plane rotation direction with respect to the [110] direction of the plate surface of the substrate or a direction equivalent to the [110] direction.
  • the semiconductor device includes an intermediate layer between the buffer layer and the group III group nitride semiconductor layer.
  • the intermediate layer is hexagonal.
  • the intermediate layer has a superlattice layer.
  • the GaN template in the eleventh aspect has a substrate, a buffer layer on the substrate, and a group III nitride semiconductor layer on the buffer layer.
  • the substrate is a cubic substrate.
  • the buffer layer is hexagonal.
  • the c-axis of the buffer layer faces the first direction at a rate of 50% or more.
  • the first direction is inclined within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate.
  • the c-axis of the group III nitride semiconductor layer is inclined within a range of 0 ° to 5 ° with respect to the first direction in both the direction perpendicular to the plate surface of the substrate and the in-plane direction.
  • the cubic substrate may be a Si (001) substrate.
  • the first direction is within a range of 30 ° or less in the in-plane rotation direction with respect to the [110] direction of the plate surface of the substrate or a direction equivalent to the [110] direction.
  • the thin film substrate manufacturing method includes a step of disposing a cubic substrate inside a chamber and an inclination within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the cubic substrate. And a step of forming a hexagonal buffer layer on the cubic substrate by sputtering while maintaining a relative positional relationship between the cubic substrate and the target. .
  • a method for manufacturing a semiconductor device comprising: arranging a cubic substrate inside a chamber; and tilting the cubic substrate within a range of 10 ° to 60 ° with respect to a direction perpendicular to a plate surface of the cubic substrate.
  • a step of disposing a target at a predetermined position, a step of forming a hexagonal buffer layer on the cubic substrate by sputtering while maintaining a relative positional relationship between the cubic substrate and the target, and a buffer layer And a step of growing a group III nitride semiconductor layer on the substrate.
  • the film forming method in the fourteenth aspect is a method of forming a thin film on a substrate.
  • a cubic substrate is placed inside a chamber, and a target is placed at a position inclined within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the cubic substrate.
  • a hexagonal buffer layer is formed on the cubic substrate by sputtering.
  • the cubic substrate may be a Si (001) substrate.
  • the first direction is within a range of 30 ° or less in the in-plane rotation direction with respect to the [110] direction of the plate surface of the substrate or a direction equivalent to the [110] direction.
  • a film forming apparatus in a fifteenth aspect, includes a substrate support portion for supporting a substrate, a chamber for accommodating the substrate support portion, and a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate. And a target arrangement portion arranged at a position inclined so as to be relatively variable.
  • a thin film substrate and a semiconductor device for forming a hexagonal buffer layer on a cubic substrate, a manufacturing method thereof, a film forming apparatus, a film forming method, and a GaN template are provided.
  • FIG. 4 is an enlarged view of FIG. 3. It is a figure which shows the positional relationship of a board
  • FIG. 1 is a diagram showing a schematic configuration of a film forming apparatus 1000 according to this embodiment.
  • the film forming apparatus 1000 is an apparatus for forming a thin film on the substrate 110 by sputtering.
  • the film forming apparatus 1000 includes a chamber 1100, a susceptor 1200, a heater 1300, a target placement unit 1400, a target 1500, a voltage application unit 1600, and a gas supply unit (not shown).
  • the chamber 1100 is for accommodating the substrate 110 on which sputtering is performed.
  • the chamber 1100 accommodates therein a susceptor 1200, a heater 1300, a target placement unit 1400, and a target 1500.
  • the susceptor 1200 is a substrate support unit for supporting the substrate 110.
  • the heater 1300 is for heating the substrate 110 supported by the susceptor 1200.
  • the target placement unit 1400 is for placing the target 1500.
  • the target 1500 is a raw material for forming a thin film on the substrate 110 by sputtering.
  • the voltage application unit 1600 is for applying a voltage to the target 1500.
  • the chamber 1100 is grounded.
  • the voltage application unit 1600 uses a DC power supply.
  • the voltage application unit 1600 may use an AC power source or a pulse DC power source.
  • the angle formed between the direction perpendicular to the plate surface of the substrate 110 and the direction in which the target 1500 is disposed when viewed from the substrate 110 is an angle ⁇ .
  • the angle ⁇ is an angle formed by the center of the surface of the substrate 110 and the center of the surface of the target 1500.
  • the angle ⁇ is in the range of 10 ° to 60 °. That is, the target placement unit 1400 is placed at a position that is inclined within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate 110.
  • the target 1500 is disposed at a position inclined within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate 110.
  • the angle ⁇ is in the range of 15 ° to 55 °. More preferably, the angle ⁇ is in the range of 20 ° to 50 °. More preferably, the angle ⁇ is in the range of 25 ° to 45 °.
  • the surface of the target 1500 is inclined within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate 110.
  • the target placement unit 1400 is placed at a position and orientation in which the surface of the target 1500 is tilted within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate 110.
  • the film forming apparatus 1000 is a directional sputtering apparatus.
  • FIG. 2 is a diagram showing a substrate 110 used for film formation.
  • the substrate 110 is a Si (001) substrate.
  • the substrate 110 is a cubic substrate.
  • the substrate 110 has an orientation flat as shown in FIG. Further, in FIG. 2, a [ ⁇ 110] direction and a [110] direction are drawn.
  • an off substrate having an off angle of 15 ° or less in the [110] direction or a direction equivalent to the [110] direction may be applied.
  • the substrate 110 is placed on the susceptor 1200 inside the chamber 1100.
  • the target 1500 is positioned in the [110] direction of the substrate 110 or the direction equivalent to the [110] direction.
  • 1500 is arranged.
  • the target 1500 is disposed at a position inclined within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate 110.
  • the material of the target 1500 is Al.
  • about 2 to 100 sccm of N 2 gas is supplied.
  • the target 1500 is located within 30 ° in the in-plane rotation direction of the substrate 110 from the [110] direction of the substrate 110 or a direction equivalent to the [110] direction.
  • the voltage application unit 1600 applies a voltage to the target 1500. Thereby, the raw material jumps out of the target 1500. Then, the protruding raw material is scattered in a direction inclined from a direction perpendicular to the plate surface of the substrate 110. That is, when viewed from the substrate 110, the raw material is ejected from a direction inclined by an angle ⁇ from the [110] direction in a direction perpendicular to the plate surface of the substrate 110. At this time, the susceptor 1200 is not rotating. That is, the substrate 110 is not rotated with respect to the chamber 1100. Then, the protruding raw material is deposited on the substrate 110. Thereby, the buffer layer 120 is formed on the substrate 110. That is, a hexagonal AlN layer is formed on a Si (001) substrate which is a cubic substrate.
  • FIG. 3 is a diagram showing a thin film substrate 100 formed by the film forming apparatus 1000.
  • the thin film substrate 100 is a deposition target substrate on which a thin film is formed.
  • the thin film substrate 100 includes a substrate 110 and a buffer layer 120.
  • the buffer layer 120 is an AlN layer formed by sputtering.
  • the substrate 110 is a cubic substrate.
  • the buffer layer 120 is a hexagonal layer.
  • the thin film substrate 100 includes the cubic substrate 110 and the hexagonal buffer layer 120.
  • FIG. 4 is an enlarged view of FIG.
  • the c-axis of the buffer layer faces the first direction J1 over the plate surface of the substrate 110.
  • the first direction J1 is inclined by an angle ⁇ 1 with respect to the direction perpendicular to the plate surface of the substrate 110.
  • the growth direction of the buffer layer 120 is inclined by an angle ⁇ 1 with respect to the direction perpendicular to the plate surface of the substrate 110.
  • the inclination angle ⁇ ⁇ b> 1 of the growth direction of the buffer layer 120 is close to the arrangement angle ⁇ of the target 1500.
  • the angle ⁇ 1 is in the range of 10 ° to 60 °. Preferably, the angle ⁇ 1 is in the range of 15 ° to 55 °. More preferably, the angle ⁇ 1 is in the range of 20 ° to 50 °. More preferably, the angle ⁇ 1 is in the range of 25 ° to 45 °.
  • FIG. 5 is a diagram showing the positional relationship between the substrate 110 and the target 1500 in this embodiment in a polar coordinate space.
  • a direction perpendicular to the plate surface of the substrate 110 is a normal direction Z A.
  • the tilt angle from the normal direction Z A in the first direction J1 is defined as a declination angle ⁇ A
  • the in-plane rotation direction of the substrate 110 in the first direction J1 is defined as a declination angle ⁇ A.
  • a direction perpendicular to the surface of the target 1500 is defined as a normal direction Z B.
  • the target particles reach the substrate 110 from the direction of the normal direction Z B of the target 1500 or a direction close to that direction.
  • the reached target particles are crystallized so as to be thermodynamically stable. Therefore, the incident direction of the target particles is close to the growth direction of the buffer layer 120. Therefore, the first direction J1 which is the c-axis direction of the buffer layer 120 is close to the normal direction Z B of the target 1500.
  • the substrate 110 is a cubic substrate. Therefore, atoms are arranged at the lattice apexes on the plate surface of the substrate 110.
  • the buffer layer 120 is hexagonal.
  • the inclined surface of the buffer layer 120 matches the plate surface of the substrate 110.
  • a (10-13) plane of the buffer layer 120 described later is an inclined surface of the buffer layer 120.
  • atoms are arranged at the positions of the vertices of a rectangular lattice. Therefore, the atoms located at the square lattice-like vertices of the substrate 110 and the atoms located at the rectangular lattice-like vertices of the buffer layer 120 are combined. Therefore, the hexagonal buffer layer 120 can be grown on the cubic substrate 110.
  • target particles are transported toward the substrate 110 from a specific direction with respect to the substrate 110. That is, when viewed from the plate surface of the substrate 110, the raw material particles are always transported from a substantially constant direction.
  • the c-axis of the GaN layer at the first location on the substrate 110 is in the first direction J1.
  • the c-axis of the GaN layer at the second location on the substrate 110 also faces the first direction J1.
  • most of the c-axis of the AlN layer and the GaN layer to be formed are oriented in the first direction J1 over the plate surface of the substrate 110.
  • the c-axis is inclined at a specific angle ⁇ 1 (see FIG. 4) with respect to the direction perpendicular to the plate surface of the substrate 110. Further, the c-axis is directed in a specific direction within a range of 30 ° or less in the in-plane rotation direction with respect to the [110] direction of the plate surface of the substrate 110 or a direction equivalent to the [110] direction.
  • the c-axis of the GaN layer at the third location of the substrate 110 faces the second direction J2.
  • the c-axis of the GaN layer at the fourth position of the substrate 110 faces the third direction J3.
  • the second direction J2 and the third direction J3 are different directions.
  • the c-axis is directed in different directions depending on the location of the substrate 110.
  • the buffer layer 120 has a first region and a second region rotated by 30 ° in the in-plane rotation direction from the first region. That is, two regions having different crystal orientations are mixed. Therefore, a single crystal cannot be obtained. Even if an off-substrate is used, a crystal with good crystallinity cannot be obtained.
  • the thin film substrate 100 of this embodiment includes a substrate 110 and a buffer layer 120.
  • the c-axis of the buffer layer 120 faces the first direction J1 over the plate surface of the substrate 110. That is, the c-axis of the buffer layer 120 faces the first direction J1 at a rate of 95% or more.
  • the substrate 110 is not arranged in a direction equivalent to the [110] direction, the proportion of the c-axis facing the first direction J1 decreases. Even in such a case, the c-axis of the buffer layer 120 faces the first direction J1 at a rate of at least 50% or more.
  • the c-axis of the buffer layer 120 faces the first direction J1 at a rate of 50% to 100%.
  • the III-group nitride semiconductor layer can be grown with That is, the dominant direction of the c-axis in the buffer layer 120 determines the inclination of the c-axis of the III-group nitride semiconductor layer that is subsequently grown. In the group III nitride semiconductor layer grown in this way, 95% or more of the c-axis is directed in the first direction J1. That is, almost a single crystal is obtained.
  • the ratio of the c-axis facing the first direction J1 in the c-axis of the buffer layer 120 is a ratio of 50% or more and 100% or less. Preferably, it is a ratio of 65% or more and 100% or less. More preferably, the ratio is 80% or more and 100% or less. More preferably, the ratio is 90% or more and 100% or less.
  • the cubic substrate 110 in the present embodiment is a Si (001) substrate.
  • other cubic substrates can be used.
  • an MgO substrate, a TiO 2 substrate, and a SrTiO 3 substrate can be mentioned.
  • a cubic substrate such as a SiC substrate or a GaAs substrate can also be used.
  • a (110) substrate may be used.
  • the buffer layer 120 of this embodiment is an AlN layer.
  • Other buffer layers may also be used. Examples of the buffer layer include a BN layer, a ZnO layer, and a ZnS layer.
  • the manufacturing method of the thin film substrate 100 may include a first step in which the susceptor 1200 is not rotated and a second step in which the susceptor 1200 is rotated. That is, in the initial stage of film formation of the buffer layer 120, a part of the buffer layer 120 is formed with a film thickness of about 10 nm or more without rotating the susceptor 1200. At this stage, the orientation direction of the c-axis of the buffer layer 120 is determined. Thereafter, the remaining part of the buffer layer 120 is formed while the susceptor 1200 is rotated. At this stage, since the c-axis alignment direction has already been determined, the remainder of the buffer layer 120 grows according to the determined c-axis alignment direction. By using two steps in this way, the in-plane uniformity of the buffer layer 120 is improved.
  • Target Arrangement Unit The target arrangement unit 1400 of this embodiment is fixed to the chamber 1100. However, the target placement unit 1400 can change the tilt angle so that the surface of the target 1500 is relatively variable within a range of 10 ° to 60 ° with respect to a direction perpendicular to the plate surface of the substrate 110. It may be.
  • the angle formed by the direction perpendicular to the plate surface of the substrate 110 and the direction in which the target 1500 is disposed as viewed from the substrate 110 is inclined by an angle ⁇ . is doing. Therefore, the hexagonal buffer layer 120 can be grown on the cubic substrate 110. Therefore, for example, a group III nitride semiconductor can be grown on a large-diameter Si (001) substrate.
  • the thin film substrate 100 of the present embodiment includes a cubic substrate 110 and a hexagonal buffer layer 120 grown on the substrate 110. Therefore, a III-group nitride semiconductor can be grown on an inexpensive and large-diameter Si (001) substrate.
  • FIG. 7 is a diagram illustrating a schematic configuration of the HEMT 200 according to the second embodiment.
  • the HEMT 200 is a semiconductor element having a group III nitride semiconductor.
  • the HEMT 200 includes a substrate 110, a buffer layer 120, a base layer 230, a channel layer 240, a barrier layer 250, a source electrode S1, a drain electrode D1, and a gate electrode G1.
  • the substrate 110 is a cubic substrate. Specifically, it is a Si (001) substrate.
  • the buffer layer 120 is a hexagonal AlN layer. As described above, the hexagonal buffer layer 120 is formed on the cubic substrate 110.
  • the underlayer 230 is a GaN layer.
  • the channel layer 240 is a GaN layer.
  • the barrier layer 250 is an AlGaN layer. These are examples, and the base layer 230, the channel layer 240, and the barrier layer 250 may be other types of semiconductor layers.
  • FIG. 8 is a conceptual diagram illustrating the substrate 110, the buffer layer 120, and the base layer 230 extracted from the HEMT 200.
  • the first angle ⁇ ⁇ b> 1 is an angle formed by the direction perpendicular to the plate surface of the substrate 110 and the c-axis of the buffer layer 120.
  • the second angle ⁇ ⁇ b> 2 is an angle formed by the direction perpendicular to the plate surface of the substrate 110 and the c-axis of the base layer 230.
  • the angle ⁇ 2 is in the range of 10 ° to 60 °. Preferably, the angle ⁇ 2 is in the range of 15 ° to 55 °. More preferably, the angle ⁇ 2 is in the range of 20 ° to 50 °. More preferably, the angle ⁇ 2 is in the range of 25 ° to 45 °.
  • the direction of the c-axis of the base layer 230 is substantially the same as the direction of the c-axis of the buffer layer 120. That is, GaN grows on the buffer layer 120 whose c-axis is inclined, inheriting the crystallinity of the buffer layer 120.
  • the second angle ⁇ 2 is substantially equal to the first angle ⁇ 1.
  • the second angle ⁇ 2 is inclined by 0 ° or more and 5 ° or less with respect to the first angle ⁇ 1 in both the direction perpendicular to the plate surface of the substrate 110 and the in-plane direction.
  • the c-axis of the base layer 230 is tilted within a range of 0 ° to 5 ° with respect to both the direction perpendicular to the plate surface of the substrate 110 and the in-plane direction with respect to the c-axis direction of the buffer layer 120. is doing. Preferably, it is in the range of 0 ° to 3 °. More preferably, it is in the range of 0 ° to 1 °.
  • the c-axis of the buffer layer 120 is within a range of 30 ° or less in the in-plane rotation direction with respect to the [110] direction of the plate surface of the substrate 110 or a direction equivalent to the [110] direction.
  • the surface of the foundation layer 230 that is a GaN layer is a nonpolar surface. Therefore, spontaneous polarization and piezo polarization are suppressed. Therefore, a normally-off type HEMT is easily obtained. Further, when applied to a light emitting element, wavelength shift due to polarization in the light emitting layer is suppressed. Further, separation of electron and hole wave functions due to electric field distortion is suppressed. Therefore, it is possible to suppress a decrease in luminous efficiency.
  • FIG. 9 is a graph showing the polarization in the thin film when InGaN having an In composition ratio of 20% is grown on GaN.
  • FIG. 10 is a graph showing polarization in a thin film when AlGaN having an Al composition ratio of 20% is grown on GaN.
  • the degree of polarization when the c-axis is inclined is smaller than the degree of polarization when the c-axis is not inclined. Even if the In composition ratio or Al composition ratio changes, this tendency does not change so much. Therefore, in the semiconductor device using the nonpolar plane with the c-axis inclined in this embodiment, polarization is suppressed.
  • the buffer layer 120 is formed on the substrate 110 using the film forming apparatus 1000 of the first embodiment. Thereafter, the deposited substrate 110 is taken out of the deposition apparatus 1000.
  • a group III nitride semiconductor single crystal is epitaxially grown on the buffer layer 120 using an MOCVD apparatus or the like. That is, the base layer 230 is grown on the buffer layer 120. Next, the channel layer 240 is grown on the base layer 230. Then, a barrier layer 250 is grown on the channel layer 240.
  • the source electrode S1, the drain electrode D1, and the gate electrode G1 are formed on the barrier layer 250. Then, the substrate 110 is cut out into chips. Thereby, the HEMT 200 shown in FIG. 7 is manufactured.
  • MIS HEMT The technique of the present embodiment can be applied not only to the HEMT 200 of the present embodiment but also to a MIS type HEMT or a MOS type HEMT.
  • GaN Template The technique of this embodiment can also be applied to a GaN template.
  • the structure of the GaN template in that case is the same as that shown in FIG.
  • the HEMT 200 of this embodiment includes a cubic substrate 110 and a hexagonal buffer layer 120 grown on the substrate 110. Therefore, a group III nitride semiconductor can be grown on an inexpensive and large-diameter Si (001) substrate.
  • FIG. 11 is a diagram showing a schematic configuration of a light emitting element 300 of the third embodiment.
  • the light emitting element 300 is a semiconductor element having a group III nitride semiconductor.
  • the light emitting element 300 includes a substrate 110, a buffer layer 120, an n-type contact layer 330, a light emitting layer 340, a p-type cladding layer 350, a p-type contact layer 360, an n-electrode N1, a p-electrode P1, Have
  • the substrate 110 is a cubic substrate. Specifically, it is a Si (001) substrate.
  • the buffer layer 120 is a hexagonal AlN layer. As described above, the hexagonal buffer layer 120 is formed on the cubic substrate 110.
  • the n-type contact layer 330 is a layer in contact with the n electrode N1.
  • the n-type contact layer 330 has n-type GaN.
  • the light emitting layer 340 is a layer that emits light by recombination of electrons and holes.
  • the p-type cladding layer 350 is a layer for confining electrons.
  • the p-type cladding layer 350 is a layer having a superlattice structure.
  • the p-type contact layer 360 is a layer in contact with the p-electrode P1.
  • the p-type contact layer 360 has p-type GaN.
  • Buffer Layer and GaN Layer The relationship between the buffer layer 120 and the n-type contact layer 330 in the third embodiment is the same as the relationship between the buffer layer 120 and the base layer 230 in the second embodiment. That is, the relationship shown in FIG.
  • the buffer layer 120 is formed on the substrate 110 using the film forming apparatus 1000 of the first embodiment. Thereafter, the deposited substrate 110 is taken out of the deposition apparatus 1000.
  • a group III nitride semiconductor single crystal is epitaxially grown on the buffer layer 120 using an MOCVD apparatus or the like. That is, the n-type contact layer 330 is grown on the buffer layer 120. Next, the light emitting layer 340 is grown on the n-type contact layer 330. Then, a p-type cladding layer 350 is grown on the light emitting layer 340. Then, a p-type contact layer 360 is grown on the p-type cladding layer 350.
  • Electrode forming step Then, a recess reaching from the p-type contact layer 360 to the n-type contact layer 330 is provided. Then, an n-electrode N1 is formed on the n-type contact layer 330 exposed in the recess. A p-electrode P1 is formed on the p-type contact layer 360. Further, the substrate 110 is cut out into chips. Thereby, the light emitting element 300 shown in FIG. 11 is manufactured.
  • Modified example 4-1 Semiconductor Laser Element
  • the semiconductor element according to the third embodiment shown in FIG. However, the technique of the present embodiment can be similarly applied to the semiconductor laser element.
  • the present technology can also be applied to a light receiving element.
  • the light receiving element uses the light emitting layer of the light emitting element 300 as a light absorbing layer. Examples of the light receiving element include a solar cell.
  • the HEMT 200 of this embodiment includes a cubic substrate 110 and a hexagonal buffer layer 120 grown on the substrate 110. Therefore, a group III nitride semiconductor can be grown on an inexpensive and large-diameter Si (001) substrate.
  • FIG. 12 is a view showing the structure of the thin film substrate 400 of the fourth embodiment.
  • the thin film substrate 400 includes a substrate 110, a buffer layer 120, and an intermediate layer IL.
  • the buffer layer 120 is an AlN layer formed by sputtering.
  • the substrate 110 is a cubic substrate.
  • the buffer layer 120 is a hexagonal layer.
  • the intermediate layer IL is a hexagonal layer.
  • the thin film substrate 100 includes the cubic substrate 110, the hexagonal buffer layer 120, and the hexagonal intermediate layer IL.
  • the buffer layer 120 of the fourth embodiment is the same as the buffer layer 120 of the first embodiment.
  • the intermediate layer IL of the fourth embodiment is a layer formed by the MOCVD method.
  • the intermediate layer IL is a layer for reducing lattice defects while inheriting the crystallinity of the buffer layer 120.
  • the film thickness of the intermediate layer IL is, for example, in the range of 10 nm to 100 nm.
  • the film thickness of the intermediate layer IL may be other than the above.
  • the following three types of intermediate layers can be mentioned, for example.
  • the first intermediate layer is a high temperature AlN layer.
  • the growth temperature of the high-temperature AlN layer is 950 ° C. or higher and 1100 ° C. or lower.
  • the second intermediate layer is a layer in which a low temperature AlN layer and a high temperature AlN layer are stacked. At that time, a low temperature AlN layer is formed on the buffer layer 120, and a high temperature AlN layer is formed on the low temperature AlN layer.
  • the growth temperature of the low-temperature AlN layer is 650 ° C. or higher and 800 ° C. or lower.
  • the third intermediate layer is a layer in which a high-temperature AlN layer and an AlN / GaN superlattice layer are stacked. At that time, a high-temperature AlN layer is formed on the buffer layer 120, and an AlN / GaN superlattice layer is formed on the high-temperature AlN layer.
  • the growth temperature of the AlN / GaN superlattice layer is 950 ° C. or higher and 1100 ° C. or lower.
  • the intermediate layer IL can reduce lattice defects.
  • the intermediate layer IL improves the crystallinity of the hexagonal semiconductor layer.
  • FIG. 13 is a diagram illustrating a structure of a HEMT 500 according to a modification of the fourth embodiment.
  • the HEMT 500 is a semiconductor element having a group III nitride semiconductor.
  • the HEMT 500 includes a substrate 110, a buffer layer 120, an intermediate layer IL, a base layer 230, a channel layer 240, a barrier layer 250, a source electrode S1, a drain electrode D1, and a gate electrode G1. ing.
  • the intermediate layer IL is located between the buffer layer 120 and the semiconductor layer.
  • Each layer of the HEMT 500 is the same as each layer of the HEMT 200 of the second embodiment except for the intermediate layer IL.
  • the intermediate layer IL may be any one from the first intermediate layer to the third intermediate layer of the present embodiment.
  • FIG. 14 is a diagram showing a structure of a light emitting element 600 according to a modification of the fourth embodiment.
  • the light emitting element 600 is a semiconductor element having a group III nitride semiconductor.
  • the light-emitting element 600 includes a substrate 110, a buffer layer 120, an intermediate layer IL, an n-type contact layer 330, a light-emitting layer 340, a p-type cladding layer 350, a p-type contact layer 360, an n-electrode N1, p electrode P1.
  • the intermediate layer IL is located between the buffer layer 120 and the semiconductor layer.
  • Each layer of the light emitting element 600 is the same as each layer of the light emitting element 300 of the third embodiment except for the intermediate layer IL.
  • the intermediate layer IL may be any one from the first intermediate layer to the third intermediate layer of the present embodiment.
  • the intermediate layer IL is formed by the MOCVD method.
  • other film forming methods may be used to form the intermediate layer IL.
  • HVPE method and MBE method are mentioned.
  • Experiment 1 1. Formation of GaN layer 1-1. Film Formation Conditions Using the film formation apparatus 1000, an AlN layer was formed on a Si (001) substrate. The Si (001) substrate was placed on the susceptor 1200 so that when the target was projected onto the Si (001) substrate, the target was placed in the [110] direction of the Si (001) substrate or a direction equivalent to the [110] direction. . The angle formed by the direction perpendicular to the plate surface of the Si (001) substrate and the direction in which the target is located was 36 °. The target was arranged at a position within 30 ° in the in-plane rotation direction of the Si (001) substrate from the [110] direction of the Si (001) substrate or an equivalent direction thereof.
  • the susceptor 1200 was not rotated. Therefore, the target particles are transported from the direction in which the target is located with respect to the arranged Si (001) substrate. That is, the target particles reach the Si (001) substrate from a direction close to [111].
  • an AlN layer was formed on the Si (001) substrate.
  • the substrate temperature was 450 ° C.
  • the target was Al.
  • 50 sccm of N 2 gas was supplied into the chamber 1100.
  • a voltage was applied to the target at DC 300W.
  • the internal pressure was 0.23 Pa.
  • the film formation time was 30 minutes. Thereby, an AlN layer of 80 nm was formed on the Al layer.
  • FIG. 15 is a scanning electron micrograph (SEM photograph) showing the surface of the GaN layer deposited on the Si (001) substrate. As shown in FIG. 15, anisotropy is recognized in the growth direction of the GaN layer.
  • FIG. 16 is a scanning electron micrograph (SEM photograph) showing a cross section of the GaN layer formed on the Si (001) substrate. As shown in FIG. 16, the c-axis of the GaN layer is inclined by a certain angle with respect to the plate surface of the Si (001) substrate. The angle formed by this was about 32 °.
  • FIG. 17 is an enlarged view of FIG. As shown in FIG. 17, the c-axis of the AlN layer is inclined in the sputtering direction. Further, the c-axis of the GaN layer is also inclined in the sputtering direction. The AlN layer and the GaN layer are grown in substantially the same direction. The deviation between the direction in which the AlN layer grows and the direction in which the GaN layer grows was 2 ° or less.
  • FIG. 18 is a scanning electron micrograph (SEM photograph) showing the surface of the GaN layer when the susceptor 1200 is rotated at 20 rpm. At this time, GaN layers were sparsely grown on the Si (001) substrate.
  • FIG. 19 is a graph showing the result (2 ⁇ / ⁇ ) of X-ray diffraction at an arbitrary location. As shown in FIG. 19, a peak of GaN (10-13) and a peak of Si (004) were observed. This indicates that the GaN layer formed on the Si (001) substrate has grown in the direction of the (10-13) plane.
  • FIG. 20 shows the (10-13) plane of the GaN layer.
  • FIG. 23 is a scanning electron micrograph (SEM photograph) showing a cross section of a GaN layer formed on a Si (001) substrate.
  • the first GaN layer was grown on the first AlN layer.
  • the film thickness of the first GaN layer is 1 ⁇ m.
  • a second AlN layer was grown on the first GaN layer.
  • the film thickness of the second AlN layer is about 10 nm.
  • a second GaN layer was grown on the second AlN layer.
  • the film thickness of the second GaN layer is 1 ⁇ m.
  • the surface of the second GaN layer is flat. Therefore, it is easy to form various element structures on the flat GaN layer.
  • FIG. 24 is a transmission electron micrograph (cross-sectional TEM photograph) showing a boundary surface between an AlN layer and a GaN layer formed on a Si (001) substrate.
  • the c-axis of the AlN layer does not face the first direction J1.
  • the c-axis of the AlN layer faces the first direction J1.
  • the c-axis of the AlN layer faces the first direction J1 at a rate of 50% or more.
  • the c-axis of the GaN layer faces the first direction J1 over the imaging region in FIG.
  • the information in the first direction J1 which is the dominant direction among the c-axis directions of the AlN layer as the underlying layer, is inherited.
  • the GaN layer above the AlN layer information on the c-axis direction that is not dominant in the AlN layer is hardly carried over. Therefore, if the c-axis of the AlN layer faces the first direction J1 at a rate of 50% or more, the c-axis faces the first direction J1 substantially uniformly over the plate surface of the Si (001) substrate.
  • a GaN layer is obtained. That is, it became clear that a unidirectionally oriented GaN layer was obtained.
  • a (10-13) plane GaN layer could be grown.
  • the semiconductor layer can be grown on a crystal plane corresponding to the angle ⁇ . That is, AlN particles that have reached the substrate from a specific direction grow with the c-axis inclined in a direction close to that direction. At that time, it is considered that the semiconductor layer grows while making the thermodynamically stable surface flat.
  • Experiment 2 1. Sputtering angle 1-1. Film-forming conditions The film-forming conditions are almost the same as in Experiment 1. Therefore, conditions different from those in Experiment 1 will be described.
  • the internal pressure was 0.02 Pa.
  • the angle formed between the direction perpendicular to the plate surface of the substrate and the direction perpendicular to the surface of the target was 36 ° and 20 °.
  • FIG. 25 is a photomicrograph showing the surface of the GaN layer when the angle formed between the direction perpendicular to the plate surface of the substrate and the direction perpendicular to the surface of the target is 36 °. As shown in FIG. 25, the (10-13) plane of the GaN layer was observed.
  • FIG. 25A is a photograph showing a case where the growth time is 1 minute.
  • FIG. 25B shows a case where the growth time is 5 minutes.
  • FIG. 25C shows a case where the growth time is 10 minutes.
  • the c-axis of the GaN layer was inclined by 32 ° with respect to the direction perpendicular to the plate surface of the substrate.
  • FIG. 26 is a photomicrograph showing the surface of the GaN layer when the angle formed between the direction perpendicular to the plate surface of the substrate and the direction perpendicular to the surface of the target is 20 °. As shown in FIG. 26, the (10-15) plane of the GaN layer was observed.
  • FIG. 26A is a photograph showing a case where the growth time is 1 minute.
  • FIG. 26B shows a case where the growth time is 5 minutes.
  • FIG. 26C shows a case where the growth time is 10 minutes.
  • the c-axis of the GaN layer was inclined 20 ° with respect to the direction perpendicular to the plate surface of the substrate.
  • GaN layers growing in different plane directions were obtained. That is, the growth direction of the GaN layer can be controlled to some extent by changing the irradiation direction and arrangement of the target.
  • FIG. 27 is a diagram showing the structure of the sample of Experiment 3. Samples A, B, and C were used as samples. Samples A, B, and C respectively have the first intermediate layer, the second intermediate layer, and the third intermediate layer of the fourth embodiment.
  • Sample A is obtained by laminating a Si (001) substrate, an AlN layer, an intermediate layer IL, and a GaN layer in this order.
  • the intermediate layer IL is a high-temperature AlN layer having a thickness of 20 nm.
  • the thickness of the AlN layer is 45 nm.
  • the film thickness of the GaN layer is 4 ⁇ m.
  • the GaN layer is obtained by growing the (10-13) plane.
  • the AlN layer was formed by sputtering. At that time, the angle formed between the direction perpendicular to the plate surface of the substrate and the direction perpendicular to the surface of the target was set to 36 °.
  • the intermediate layer IL and the GaN layer were formed by a normal MOCVD method.
  • Sample B is obtained by laminating a Si (001) substrate, an AlN layer, an intermediate layer IL, and a GaN layer in this order.
  • the intermediate layer IL is obtained by stacking a high-temperature AlN layer having a thickness of 20 nm on a low-temperature AlN layer having a thickness of 10 nm.
  • the thickness of the AlN layer is 45 nm.
  • the film thickness of the GaN layer is 4 ⁇ m.
  • the GaN layer is obtained by growing the (10-13) plane.
  • the AlN layer was formed by sputtering. At that time, the angle formed between the direction perpendicular to the plate surface of the substrate and the direction perpendicular to the surface of the target was set to 36 °.
  • the intermediate layer IL and the GaN layer were formed by a normal MOCVD method.
  • Sample C is obtained by laminating a Si (001) substrate, an AlN layer, an intermediate layer IL, and a GaN layer in this order.
  • the intermediate layer IL is obtained by stacking 25 pairs of AlN / GaN superlattice layers on a high-temperature AlN layer having a thickness of 20 nm.
  • the thickness of the AlN layer is 45 nm.
  • the film thickness of the GaN layer is 4 ⁇ m.
  • the GaN layer is obtained by growing the (10-13) plane.
  • the AlN layer was formed by sputtering. At that time, the angle formed between the direction perpendicular to the plate surface of the substrate and the direction perpendicular to the surface of the target was set to 36 °.
  • the intermediate layer IL and the GaN layer were formed by a normal MOCVD method.
  • X-ray diffraction was measured for (10-13) GaN.
  • the full width at half maximum FWHM of the X-ray of GaN having the intermediate layer IL was smaller than the full width at half maximum FWHM of the X-ray of GaN having no intermediate layer IL. Further, the full width at half maximum FWHM of the X-ray of GaN having the superlattice layer as the intermediate layer IL was about half of the full width at half maximum FWHM of the GaN X-ray having no intermediate layer IL.
  • the provision of the intermediate layer IL improves the crystallinity of the GaN layer grown thereon. If a superlattice layer is used as the intermediate layer IL, the crystallinity of the GaN layer is further improved.
  • SYMBOLS 100 Thin film substrate 110 ... Substrate 120 ... Buffer layer 200 ... HEMT G1 ... Gate electrode S1 ... Source electrode D1 ... Drain electrode 300 ... Light emitting element 330 ... n-type contact layer 340 ... Light emitting layer 350 ... p-type cladding layer 360 ... p-type contact layer N1 ... n electrode P1 ... p electrode IL ... intermediate layer DESCRIPTION OF SYMBOLS 1000 ... Film-forming apparatus 1100 ... Chamber 1200 ... Susceptor 1300 ... Heater 1400 ... Target arrangement

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Abstract

L'objectif de la présente invention est de pourvoir à un substrat à couches minces dans lequel une couche tampon à structure cristalline hexagonale est formée sur un substrat à structure cristalline cubique, un dispositif à semi-conducteur, un procédé de fabrication associé, un appareil de dépôt, un procédé de dépôt et un gabarit GaN. Ce procédé de dépôt est un procédé qui dépose une couche mince à structure cristalline hexagonale sur un substrat à structure cristalline cubique. Un substrat (110) est un substrat Si à structure cristalline cubique (001). Le substrat (110) est disposé sur un suscepteur (1200) dans une chambre (1100). Une cible (1500) est disposée à une position qui est inclinée dans une plage de 10° à 60° par rapport à une direction perpendiculaire à la surface plane du substrat (110). Une couche tampon à structure cristalline hexagonale (120) est déposée sur le substrat à structure cristalline cubique (110) par pulvérisation cathodique sans faire tourner le substrat (110) par rapport à la chambre (1100).
PCT/JP2016/000895 2015-02-20 2016-02-19 SUBSTRAT À COUCHES MINCES, DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION ASSOCIÉ, APPAREIL DE DÉPÔT, PROCÉDÉ DE DÉPÔT ET GABARIT GaN Ceased WO2016132746A1 (fr)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
WO2019123763A1 (fr) * 2017-12-19 2019-06-27 株式会社Sumco Procédé de production de substrat semi-conducteur au nitrure du groupe iii
WO2019225112A1 (fr) * 2018-05-23 2019-11-28 株式会社Sumco Substrat semi-conducteur au nitrure du groupe iii et son procédé de production

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