WO2016179951A1 - 一种薄膜晶体管及其制备方法、阵列基板和显示面板 - Google Patents

一种薄膜晶体管及其制备方法、阵列基板和显示面板 Download PDF

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WO2016179951A1
WO2016179951A1 PCT/CN2015/091540 CN2015091540W WO2016179951A1 WO 2016179951 A1 WO2016179951 A1 WO 2016179951A1 CN 2015091540 W CN2015091540 W CN 2015091540W WO 2016179951 A1 WO2016179951 A1 WO 2016179951A1
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layer
film
metal
source
gate
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French (fr)
Inventor
袁广才
闫梁臣
徐晓光
王磊
彭俊彪
兰林锋
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South China University of Technology SCUT
BOE Technology Group Co Ltd
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South China University of Technology SCUT
BOE Technology Group Co Ltd
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Priority to EP15882903.6A priority Critical patent/EP3121840B1/en
Priority to US15/122,155 priority patent/US20170154905A1/en
Publication of WO2016179951A1 publication Critical patent/WO2016179951A1/zh
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1258—Spray pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
    • C23C18/127—Preformed particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C20/00—Chemical coating by decomposition of either solid compounds or suspensions of the coating forming compounds, without leaving reaction products of surface material in the coating
    • C23C20/02—Coating with metallic material
    • C23C20/04—Coating with metallic material with metals

Definitions

  • the present invention relates to the field of semiconductor technologies, and in particular, to a thin film transistor, a method for fabricating the same, an array substrate, and a display panel.
  • Flat Panel Display has become the mainstream product on the market, and there are more and more types of flat panel displays, such as Liquid Crystal Display (LCD) and Organic Light Emitted Diode (OLED) displays. , Plasma Display Panel (PDP) and Field Emission Display (FED).
  • LCD Liquid Crystal Display
  • OLED Organic Light Emitted Diode
  • PDP Plasma Display Panel
  • FED Field Emission Display
  • TFT Thin Film Transistor
  • MOTFT metal oxide thin film transistor
  • the main structures used in MOTFT are a back channel etch structure and an etch barrier structure.
  • the MOTFT of the back channel etch structure is simple in fabrication process and the same as the traditional amorphous silicon fabrication process, and the equipment investment and production cost are relatively low. It is considered to be the inevitable development direction for MOTFT to achieve mass production and wide use.
  • the MOTFT of the back channel etched structure deposits a metal layer on the active layer after the active layer is formed, and is patterned as a source and drain electrode.
  • the etch barrier structure is formed by forming an etch barrier layer after the active layer is formed, and then depositing a metal layer thereon and patterning as a source and a drain. pole.
  • the problem of the active layer being corroded is the MOTFT back channel damage.
  • the active layer composed of a metal oxide is susceptible to ion damage, resulting in carrier trap generation on the exposed channel surface and an increase in oxygen vacancy concentration, resulting in poor device stability; for example,
  • wet etching the active layer composed of metal oxide is sensitive to most of the acidic etching liquid, and is easily corroded during etching, which will greatly affect device performance.
  • An object of the present invention is to provide a thin film transistor, a method for fabricating the same, an array substrate, and a display panel, which solve the problem that the active layer is easily corroded when the metal oxide thin film transistor is fabricated by the back channel etching process in the prior art. .
  • Embodiments of the present invention provide a method for fabricating a thin film transistor, including:
  • the metal nanoparticle layer serving as an etch protection layer
  • a source/drain metal film on the substrate of the above process, forming a source/drain metal film including a source electrode and a drain electrode by a patterning process, the source electrode and the source The drain electrode covers a portion of the metal nanoparticle layer;
  • a passivation layer is formed on the source and drain metal layers.
  • the metal nanoparticle layer is used as the protective layer of the active layer, and the active layer can be protected when the source electrode and the drain electrode are etched to avoid device defects caused by corrosion of the active layer;
  • the particle layer has good electrical conductivity, has good thermal stability, and has low requirements on the preparation process of the metal oxide thin film transistor, thereby realizing a simple and low-cost preparation of the metal oxide thin film transistor.
  • the metal nanoparticle layer is prepared from at least one of gold nanoparticles, silver nanoparticles, platinum nanoparticles, ruthenium nanoparticles, nickel nanoparticles, and cobalt nanoparticles.
  • the metal nanoparticle layer is prepared by using materials such as gold nanoparticles, silver nanoparticles, platinum nanoparticles, ruthenium nanoparticles, nickel nanoparticles or cobalt nanoparticles, and the source electrode and the etched layer may be subsequently etched.
  • the active layer is protected when the drain electrode is described to avoid device defects caused by the active layer being corroded.
  • preparing the metal nanoparticle layer on the active layer comprises:
  • the metal nanoparticle layer is prepared on the active layer by physical vapor deposition, chemical vapor deposition, hydrothermal method, sol-gel method, spray pyrolysis method or hot wall method.
  • the metal nanoparticle layer is prepared with a thickness of 1 to 5 nanometers.
  • the portion of the metal nanoparticle layer that is not covered by the source electrode and the drain electrode is removed or oxidized by using an oxygen plasma.
  • a glass substrate having a buffer layer is used as the base substrate.
  • a flexible substrate having a water-oxygen barrier layer is used as the base substrate, and polyethylene naphthalate, polyethylene terephthalate, polyimide or metal foil is used as the flexible substrate. s material.
  • a composite film of at least one of an aluminum film, a copper film, a molybdenum film, a titanium film, a silver film, a gold film, a ruthenium film, a tungsten film, a chrome film, and an aluminum alloy film or at least two or more is used.
  • the gate insulating layer is prepared by a single-layer silicon oxide film, a silicon nitride film, an aluminum oxide film, a tantalum pentoxide film or a hafnium oxide film, or a composite of at least two single-layer films.
  • the gate insulating layer is prepared by a thin film, and the gate insulating layer is prepared with a thickness of 50 to 500 nm.
  • the active layer is prepared with a metal oxide containing at least one of In, Zn, Ga, and Sn, and the active layer is prepared with a thickness of 10 to 200 nm.
  • the source/drain metal film is prepared by a single film layer of at least one of an aluminum film, a copper film, a molybdenum film, and a titanium film, or a composite film layer composed of at least two or more, and has a thickness of 100 to 2000 nm.
  • the source and drain metal thin films are prepared.
  • the passivation layer may be any single layer film of silicon oxide, silicon nitride, aluminum oxide, cerium oxide, polyimide, styrene butylene or polymethyl methacrylate or at least two A composite film layer composed of the above.
  • the passivation layer has a thickness of 50 to 2000 nm.
  • the gate metal layer formed on the base substrate, the gate metal layer including a gate electrode
  • the metal nanoparticle layer serving as an etch protection layer
  • a source and drain metal layer formed on the metal nanoparticle layer, the source and drain metal layer including a source electrode and a drain electrode;
  • Embodiments of the present invention provide an array substrate, including the thin film crystal provided by the above embodiments. Body tube.
  • the embodiment of the invention provides a display panel comprising the array substrate provided in the above embodiment.
  • the metal nanoparticle layer is used as the protective layer of the active layer, and the active layer can be protected when the source electrode and the drain electrode are etched to avoid device defects caused by corrosion of the active layer;
  • the metal nanoparticle layer has good electrical conductivity, has good thermal stability, and has low requirements on the preparation process of the metal oxide thin film transistor, thereby realizing a simple and low-cost preparation of the metal oxide thin film transistor.
  • FIG. 1 is a flow chart of a method for fabricating a metal oxide thin film transistor according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a metal oxide thin film transistor in which a gate electrode is completed according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a metal oxide thin film transistor in which a gate insulating layer is completed in an embodiment of the present invention
  • FIG. 4 is a schematic structural view of a metal oxide thin film transistor in which an active layer is prepared in an embodiment of the present invention
  • FIG. 5 is a schematic structural view of a metal oxide thin film transistor in which a metal nanoparticle layer is prepared according to an embodiment of the present invention
  • FIG. 6 is a schematic structural view of a metal oxide thin film transistor in which a source-drain metal thin film is completed in an embodiment of the present invention
  • FIG. 7 is a schematic structural view of a metal oxide thin film transistor in which a source electrode and a drain electrode are completed in an embodiment of the present invention
  • FIG. 8 is a schematic structural view of a metal oxide thin film transistor in which a metal nanoparticle layer not covered by a source electrode and a drain electrode is removed in an embodiment of the present invention
  • FIG. 9 is a schematic structural view of a metal oxide thin film transistor in which a passivation layer is completed in an embodiment of the present invention.
  • an embodiment of the present invention provides a method for fabricating a thin film transistor, including:
  • a glass substrate having a buffer layer may be used as the substrate substrate, or a flexible substrate having a water-oxygen barrier layer may be used as the substrate substrate, preferably, polyethylene naphthalate B.
  • a glycol ester, polyethylene terephthalate, polyimide or metal foil is used as the material of the flexible substrate.
  • a SiO 2 buffer layer or a Si 3 N 4 layer is used as a buffer layer on the glass substrate.
  • an Al 2 O 3 layer, a Si 3 N 4 layer, a SiCN layer, an SiOx layer, a SiON layer, and a stacked composite structure of these layers may be employed as the water oxygen barrier layer.
  • a composite film of at least one of an aluminum film, a copper film, a molybdenum film, a titanium film, a silver film, a gold film, a ruthenium film, a tungsten film, a chrome film, and an aluminum alloy film or at least two or more is used.
  • a gate metal film is prepared from the film layer, and a gate metal film is prepared at a thickness of 100 to 2000 nm.
  • the gate insulating layer is prepared by using a single-layer silicon oxide film, a silicon nitride film, an aluminum oxide film, a tantalum pentoxide film or a tantalum oxide film, or a composite film composed of at least two single-layer films.
  • Gate insulating layer and is made at a thickness of 50 to 500 nm Prepare the gate insulating layer.
  • the active layer is prepared with a metal oxide containing at least one of In, Zn, Ga, and Sn, and the active layer is prepared with a thickness of 10 to 200 nm.
  • the metal nanoparticle layer may be deposited by a physical vapor deposition, a chemical vapor deposition, a hydrothermal method, a sol-gel method, a spray pyrolysis method or a hot wall method.
  • the metal nanoparticle layer is prepared from at least one of gold nanoparticles, silver nanoparticles, platinum nanoparticles, ruthenium nanoparticles, nickel nanoparticles, and cobalt nanoparticles.
  • the metal nanoparticle layer is prepared with a thickness of 1 to 5 nanometers.
  • the metal nanoparticle layer can also use one or more of the lower cost ruthenium nanoparticles, nickel nanoparticles, and cobalt nanoparticles.
  • a process of annealing the metal nanoparticle layer may also be included.
  • the metal nanoparticle layer can protect the active layer when etching the source electrode and the drain electrode, thereby avoiding device defects caused by corrosion of the active layer.
  • 105 Form a source/drain metal film on the substrate of the above process, and form a source/drain metal film including a source electrode and a drain electrode by a patterning process, and the source electrode and the drain electrode cover part of the metal nanometer. Particle layer.
  • a source/drain metal film is prepared by using any one of a single film layer or a composite film layer of at least two of an aluminum film, a copper film, a molybdenum film, and a titanium film, and the source is prepared at a thickness of 100 to 2000 nm. Drain metal film.
  • the portion of the metal nanoparticle layer that is not covered by the source and drain electrodes is removed or oxidized using an oxygen plasma.
  • it is composed of any one of a single layer film of silicon oxide, silicon nitride, aluminum oxide, cerium oxide, polyimide, styrene butylene or polymethyl methacrylate or at least two or more.
  • a passivation layer was prepared from the composite film layer, and a passivation layer was prepared with a thickness of 50 to 2000 nm.
  • the prior art also provides a method for protecting an active layer in a back channel etching process of a metal oxide thin film transistor by using an organic conductive film, but conducting silicon or carbon in the organic conductive film. Relatively poor, may cause poor contact between the active layer and the source and drain electrodes, making the metal oxide thin film transistor unstable; at the same time, the thermal stability of the organic conductive film is poor, which will decompose in the subsequent process to cause metal oxide.
  • the thin film transistor is unstable or defective, and the decomposed organic conductive film may contaminate the preparation equipment.
  • the metal nanoparticle layer has better thermal stability than the organic conductive film, can effectively protect the active layer, and makes the prepared metal oxide thin film transistor more stable and does not pollute the preparation equipment.
  • the metal nanoparticle layer is used as the protective layer of the active layer, and the active layer can be protected when the source electrode and the drain electrode are etched to avoid device defects caused by corrosion of the active layer;
  • the metal nanoparticle layer has good electrical conductivity, which is favorable for achieving good electrical contact with the source electrode and the drain electrode, and the metal nanoparticle layer has better thermal stability than the organic conductive film, and the preparation process of the metal oxide thin film transistor The requirements are lower, thereby achieving a simple and low-cost preparation of a metal oxide thin film transistor.
  • Embodiments of the present invention provide a method for preparing a first specific metal oxide thin film transistor, including:
  • Step one depositing a molybdenum/aluminum/molybdenum three-layer metal film as a gate metal film on the base substrate 1 by physical vapor deposition, and the thickness of the molybdenum/aluminum/molybdenum three-layer metal film is 25//100/25 nm, respectively.
  • the gate metal film is formed into the gate electrode 2 by a patterning process.
  • the base substrate 1 is an alkali-free glass substrate with a SiO 2 buffer layer having a thickness of 200 nm.
  • a schematic view after the gate electrode 2 is formed on the base substrate 1 is shown in FIG.
  • step two the gate insulating layer 3 is deposited by plasma enhanced chemical vapor deposition on the substrate 1 on which the above steps are completed.
  • a schematic diagram after the gate insulating layer 3 is completed is shown in FIG.
  • the gate insulating layer 3 is formed by laminating 300 nm of SiN x and 30 nm of SiO 2 .
  • Step 3 depositing a metal oxide film on the gate insulating layer 3 by physical vapor deposition, and forming a pattern of the active layer 4 by a metal oxide film by a patterning process.
  • the metal oxide film is an indium zinc oxide IZO film in which an atomic ratio of indium to zinc is 1:1.
  • a schematic diagram of preparation of the active layer 4 is shown in FIG.
  • Step 4 depositing 5 nm thick gold nanoparticles on the active layer 4 by physical vapor deposition is used as the metal nanoparticle layer 5.
  • a schematic diagram of the preparation of the completed metal nanoparticle layer 5 is shown in FIG.
  • the metal nanoparticle layer 5 can protect the active layer 4 when the source electrode 7 and the drain electrode 8 (shown in FIG. 7) are subsequently etched to prevent the metal oxide thin film transistor from being damaged by the active layer 4.
  • a process of annealing the metal nanoparticle layer 5 may also be included.
  • Step 5 On the base substrate 1 on which the above process is completed, a molybdenum/aluminum/molybdenum layer is deposited by physical vapor deposition as a source/drain metal film 6 having a thickness of 25//100/25 nm, respectively.
  • a schematic diagram of preparation of the source-drain metal film 6 is shown in FIG.
  • the source/drain metal film 6 is etched using a mixed solution of 30% H 2 O 2 and 1% KOH as a wet etching solution to form a source electrode 7 and a drain electrode 8, and the source electrode 7 and the drain electrode 8 are covered. Part of the metal nanoparticle layer 5.
  • a schematic diagram of preparation of the source electrode 7 and the drain electrode 8 is shown in FIG.
  • step six the portion of the metal nanoparticle layer 5 that is not covered by the source electrode 7 and the drain electrode 8 is removed by oxygen plasma.
  • a schematic view of the portion where the metal nanoparticle layer 5 is not covered by the source electrode 7 and the drain electrode 8 is shown in FIG.
  • Step 7 depositing 300 nm of SiO 2 as a passivation layer 9 on the substrate 1 on which the above process is completed by plasma enhanced chemical vapor deposition, that is, a source/drain metal layer including the source electrode 7 and the drain electrode 8.
  • a passivation layer 9 is formed thereon.
  • a schematic diagram of preparing the passivation layer 9 is shown in FIG.
  • the metal nanoparticle layer 5 protects the active layer 4 in the back channel etching process, and is more stable than the organic conductive film, and the metal nanoparticle layer 5 has good conductivity and large surface roughness. It is advantageous to achieve good contact between the active layer 4 and the source electrode 7 and the drain electrode 8.
  • Embodiments of the present invention provide a second specific method for preparing a metal oxide thin film transistor, including:
  • Step 1 in the base substrate 1, a copper metal film is deposited as a gate metal film by physical vapor deposition, and the thickness of the copper metal film is 500 nm, respectively, and the gate metal film is formed into the gate electrode 2 by a patterning process.
  • the base substrate 1 is a flexible substrate with an Al 2 O 3 water-oxygen barrier layer having a thickness of 50 nm.
  • a schematic view after the gate electrode 2 is formed on the base substrate 1 is shown in Fig. 2.
  • step two the gate insulating layer 3 is deposited by plasma enhanced chemical vapor deposition on the substrate 1 on which the above steps are completed.
  • a schematic diagram after the gate insulating layer 3 is completed is shown in FIG.
  • the gate insulating layer 3 is formed by laminating 200 nm of aluminum oxide and 100 nm of cerium oxide.
  • Step 3 depositing a metal oxide film on the gate insulating layer 3 by physical vapor deposition, and forming a pattern of the active layer 4 by a metal oxide film by a patterning process.
  • the metal oxide film is an 80 nm indium gallium zinc oxide IGZO film in which an atomic ratio of indium, gallium, and zinc is 1:1:1.
  • a schematic diagram of preparation of the active layer 4 is shown in FIG.
  • Step 4 using a spray pyrolysis method on the active layer 4 to prepare a 2 nm thick nickel nanoparticle is used as the metal nanoparticle layer 5.
  • a schematic diagram of the preparation of the completed metal nanoparticle layer 5 is shown in FIG.
  • the metal nanoparticle layer 5 can protect the active layer 4 when the source electrode 7 and the drain electrode 8 (shown in FIG. 7) are subsequently etched to prevent the metal oxide thin film transistor from being damaged by the active layer 4.
  • a process of annealing the metal nanoparticle layer 5 may also be included.
  • Step 5 On the base substrate 1 on which the above process is completed, a copper metal film is deposited as a source/drain metal film 6 by physical vapor deposition, and the thickness is 500 nm, respectively.
  • a schematic diagram of preparation of the source-drain metal film 6 is shown in FIG.
  • the source/drain metal film 6 is etched using a mixed solution of H 2 O 2 and H 2 SO 4 as a wet etching solution to form a source electrode 7 and a drain electrode 8, and the source electrode 7 and the drain electrode 8 cover a part of the metal Nanoparticle layer 5.
  • a schematic diagram of preparation of the source electrode 7 and the drain electrode 8 is shown in FIG.
  • Step 6 removing the metal nanoparticle layer 5 by the oxygen plasma without the source electrode 7 and The portion covered by the drain electrode 8.
  • a schematic view of the portion where the metal nanoparticle layer 5 is not covered by the source electrode 7 and the drain electrode 8 is shown in FIG.
  • Step 7 depositing 800 nm of polyimide as the passivation layer 9 on the substrate 1 on which the above process is completed by plasma enhanced chemical vapor deposition, that is, the source and drain electrodes including the source electrode 7 and the drain electrode 8.
  • a passivation layer 9 is formed on the metal layer.
  • a schematic diagram of preparing the passivation layer 9 is shown in FIG.
  • the metal nanoparticle layer 5 protects the active layer 4 in the back channel etching process, and the protection is more stable than the organic conductive film, and the metal nanoparticle layer has good conductivity and rough surface, which is very beneficial to realize. Good contact between the active layer 4 and the source electrode 7, the drain electrode 8.
  • Embodiments of the present invention provide a third method for fabricating a metal oxide thin film transistor, including:
  • Step 1 in the base substrate 1, an ITO film is deposited as a gate metal film by physical vapor deposition, and the thickness of the ITO film is 200 nm, respectively, and the gate metal film is formed into the gate electrode 2 by a patterning process.
  • the base substrate 1 is a flexible substrate with a Si 3 N 4 water oxygen barrier layer having a thickness of 200 nm.
  • a schematic view after the gate electrode 2 is formed on the base substrate 1 is shown in FIG.
  • step two the gate insulating layer 3 is deposited by plasma enhanced chemical vapor deposition on the substrate 1 on which the above steps are completed.
  • a schematic diagram after the gate insulating layer 3 is completed is shown in FIG.
  • the gate insulating layer 3 is formed by laminating 100 nm of silicon oxide, 90 nm of antimony pentoxide, and 20 nm of silicon dioxide.
  • Step 3 depositing a metal oxide film on the gate insulating layer 3 by physical vapor deposition, and forming a pattern of the active layer 4 by a metal oxide film by a patterning process.
  • Metal oxygen The compound film was a 50 nm IZO film in which the atomic ratio of indium to zinc was 1:1.
  • a schematic diagram of preparation of the active layer 4 is shown in FIG.
  • Step 4 using a solution treatment method on the active layer 4 to prepare a 3 nm thick silver nanoparticle for use as the metal nanoparticle layer 5.
  • a schematic diagram of the preparation of the completed metal nanoparticle layer 5 is shown in FIG.
  • the metal nanoparticle layer 5 can protect the active layer 4 when the source electrode 7 and the drain electrode 8 (shown in FIG. 7) are subsequently etched to prevent the metal oxide thin film transistor from being damaged by the active layer 4.
  • a process of annealing the metal nanoparticle layer 5 may also be included.
  • Step 5 On the substrate 1 on which the above process is completed, a copper metal film is deposited as a source/drain metal film 6 by physical vapor deposition, and the source/drain metal film 6 is a single-layer molybdenum film having a thickness of 200 nm.
  • a schematic diagram of preparation of the source-drain metal film 6 is shown in FIG.
  • the source/drain metal film 6 is etched using a mixed solution of H 2 O 2 and H 2 SO 4 as a wet etching solution to form a source electrode 7 and a drain electrode 8, and the source electrode 7 and the drain electrode 8 cover a part of the metal Nanoparticle layer 5.
  • a schematic diagram of preparation of the source electrode 7 and the drain electrode 8 is shown in FIG.
  • step six the portion of the metal nanoparticle layer 5 that is not covered by the source electrode 7 and the drain electrode 8 is removed by oxygen plasma.
  • a schematic view of the portion where the metal nanoparticle layer 5 is not covered by the source electrode 7 and the drain electrode 8 is shown in FIG.
  • Step 7 depositing 300 nm of SiO 2 as a passivation layer 9 on the substrate 1 on which the above process is completed by plasma enhanced chemical vapor deposition, that is, a source/drain metal layer including the source electrode 7 and the drain electrode 8.
  • a passivation layer 9 is formed thereon.
  • a schematic diagram of preparing the passivation layer 9 is shown in FIG.
  • the metal nanoparticle layer 5 protects the active layer 4 in the back channel etching process, and the protection is more stable than the organic conductive film, and the metal nanoparticle layer has good conductivity and rough surface, which is very beneficial to realize. Good contact between the active layer 4 and the source electrode 7, the drain electrode 8.
  • the first embodiment to the third embodiment are only for the purpose of illustrating some specific embodiments provided by the present invention, and the present invention is not limited thereto.
  • the prepared metal oxide thin film transistor can be used for a liquid crystal display, an active matrix organic light emitting diode display.
  • the film thickness, composition material, ratio, and the like involved in each step of the first embodiment to the third embodiment can be adjusted according to actual requirements.
  • an embodiment of the present invention further provides a thin film transistor, which is a metal oxide thin film transistor, and includes:
  • the source and drain metal layer formed on the metal nanoparticle layer 5, the source and drain metal layer comprises a source electrode 7 and a drain electrode 8;
  • a passivation layer 9 is formed over the source and drain metal layers.
  • the portion shown by the broken line frame 10 which is the portion where the metal nanoparticle layer 5 has been removed, is removed after the source electrode 7 and the drain electrode 8 are formed.
  • the removed portion of the metal nanoparticle layer 5 can protect the active layer 4 when the source electrode 7 and the drain electrode 8 are prepared.
  • the metal nanoparticle layer 5 comprises gold nanoparticles, silver nanoparticles, and platinum nanoparticles. At least one of rice particles, cerium nanoparticles, nickel nanoparticles, and cobalt nanoparticles.
  • the metal nanoparticle layer 5 has a thickness of 1 to 5 nm.
  • the base substrate 1 is a glass substrate having a buffer layer.
  • the base substrate 1 is a flexible substrate having a water-oxygen barrier layer, and the material of the flexible substrate is polyethylene naphthalate, polyethylene terephthalate, polyimide or metal foil.
  • the gate metal layer is any one of a single layer film of an aluminum film, a copper film, a molybdenum film, a titanium film, a silver film, a gold film, a tantalum film, a tungsten film, a chromium film, and an aluminum alloy film, or at least two In the composite film layer composed above, the thickness of the gate metal layer is 100 to 2,000 nm. It should be noted that the material and thickness of the gate metal layer are the material and thickness of the gate metal film in the preparation method.
  • the gate insulating layer 3 is a single-layer silicon oxide film, a silicon nitride film, an aluminum oxide film, a tantalum pentoxide film or a hafnium oxide film, or the gate insulating layer 3 is a film of at least two or more single layers.
  • the composite film formed has a thickness of the gate insulating layer 3 of 50 to 500 nm.
  • the active layer 4 contains a metal oxide of at least one of In, Zn, Ga, and Sn, and the active layer 4 has a thickness of 10 to 200 nm.
  • the source/drain metal layer is a single film layer of at least two of an aluminum film, a copper film, a molybdenum film and a titanium film, or a composite film layer composed of at least two kinds; the source and drain metal layers have a thickness of 100 to 2000. Nano. It should be noted that the material and thickness of the source and drain metal layers are the materials and thicknesses of the source and drain metal films in the preparation method.
  • the passivation layer 9 may be any single layer film of silicon oxide, silicon nitride, aluminum oxide, cerium oxide, polyimide, styrene butylene or polymethyl methacrylate or at least A composite film layer composed of two or more types.
  • the passivation layer 9 has a thickness of 50 to 2000 nm.
  • the metal nanoparticle layer is used as the protective layer of the active layer, and the active layer can be protected when the source electrode and the drain electrode are etched to avoid device defects caused by corrosion of the active layer;
  • the metal nanoparticle layer has good electrical conductivity, has good thermal stability, and has low requirements on the preparation process of the metal oxide thin film transistor, thereby realizing a simple and low-cost preparation of the metal oxide thin film transistor.
  • an embodiment of the present invention further provides an array substrate including the thin film transistor provided in the above embodiment.
  • the metal oxide thin film transistor has a metal nanoparticle layer as a protective layer of the active layer, and the active layer can be protected when the source electrode and the drain electrode are etched, thereby avoiding The source layer is poorly damaged by the device; at the same time, the metal nanoparticle layer has good electrical conductivity, has good thermal stability, and has low requirements for the preparation process of the metal oxide thin film transistor, thereby realizing a simple process and low cost.
  • Metal oxide thin film transistor fabrication in the array substrate, the metal oxide thin film transistor has a metal nanoparticle layer as a protective layer of the active layer, and the active layer can be protected when the source electrode and the drain electrode are etched, thereby avoiding The source layer is poorly damaged by the device; at the same time, the metal nanoparticle layer has good electrical conductivity, has good thermal stability, and has low requirements for the preparation process of the metal oxide thin film transistor, thereby realizing a simple process and low cost.
  • the embodiment of the invention provides a display panel comprising the array substrate provided by the above embodiments.
  • the metal oxide thin film transistor has a metal nanoparticle layer as a protective layer of the active layer, and the active layer can be etched when the source electrode and the drain electrode are etched. Protection is carried out to avoid device defects caused by corrosion of the active layer; at the same time, the metal nanoparticle layer has good conductivity, has good thermal stability, and requires low preparation process for the metal oxide thin film transistor, thereby realizing the process Simple, low cost metal oxide thin film transistor fabrication.

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Abstract

提供一种薄膜晶体管及其制备方法、阵列基板和显示面板，以解决背沟道刻蚀工艺制备金属氧化物薄膜晶体管时，有源层容易被腐蚀的问题。制备方法包括：在衬底基板（1）上形成栅极金属薄膜，通过构图工艺使栅极金属薄膜形成包括栅电极（2）的栅极金属层；在栅极金属层上形成栅极绝缘层（3）；在栅极绝缘层（3）上形成有源层（4）；在有源层（4）上制备金属纳米粒子层（5）作为刻蚀保护层；在完成上述工艺的衬底基板（1）上形成源漏极金属薄膜，通过构图工艺使源漏极金属薄膜形成包括源电极（7）和漏电极（8）的源漏极金属层，源电极（7）和漏电极（8）覆盖部分金属纳米粒子层（5）；在含氧气氛中去除或氧化金属纳米粒子层（5）未被源电极（7）和漏电极（8）覆盖的部分；在源漏极金属层上形成钝化层（9）。

Description

一种薄膜晶体管及其制备方法、阵列基板和显示面板 技术领域
本发明涉及半导体技术领域，尤其涉及一种薄膜晶体管及其制备方法、阵列基板和显示面板。
背景技术
平面显示器(Flat Panel Display，FPD)己成为市场上的主流产品，平面显示器的种类也越来越多，如液晶显示器(Liquid Crystal Display，LCD)、有机发光二极管(Organic Light Emitted Diode，OLED)显示器、等离子体显示面板(Plasma Display Panel，PDP)及场发射显示器(Field Emission Display，FED)等。
而作为FPD产业核心技术的薄膜晶体管(Thin Film Transistor，TFT)背板技术，也在经历着深刻的变革。尤其是金属氧化物薄膜晶体管(Metal Oxide Thin Film Transistor，MOTFT)，由于具有较高的迁移率(在5～50厘米2/(伏·秒)左右)、制作工艺简单、成本较低，且具有优异的大面积均匀性等特点，因此MOTFT技术自诞生以来便备受业界瞩目。
目前MOTFT主要使用的结构有背沟道刻蚀结构和刻蚀阻挡层结构。背沟道刻蚀结构的MOTFT由于制作工艺较为简单，并且与传统非晶硅制作工艺相同，设备投资和生产成本都较低廉，被认为是MOTFT实现大规模量产和能够广泛使用的必然发展方向。背沟道刻蚀结构的MOTFT在生成有源层之后，在有源层上沉积金属层，并且图形化作为源、漏电极。而刻蚀阻挡层结构是在有源层生成之后，先制作一层刻蚀阻挡层，再在之上沉积金属层并且图形化作为源、漏电 极。但是在有源层上刻蚀源、漏电极时，无论是采用干法刻蚀还是湿法刻蚀都会出现有源层被腐蚀的问题，即MOTFT背沟道损伤。例如，采用干法刻蚀时，金属氧化物构成的有源层容易受到离子损伤，导致暴露的沟道表面有载流子陷阱生成以及氧空位浓度增加，使得器件稳定性较差；又例如，采用湿法刻蚀时，因为金属氧化物构成的有源层对大部分酸性刻蚀液都比较敏感，很容易在刻蚀过程中被腐蚀，从而也将极大地影响器件性能。
发明内容
本发明的目的是提供一种薄膜晶体管及其制备方法、阵列基板和显示面板，以解决现有技术中采用背沟道刻蚀工艺制备金属氧化物薄膜晶体管时，有源层容易被腐蚀的问题。
本发明的目的是通过以下技术方案实现的：
本发明实施例提供一种薄膜晶体管的制备方法，包括：
在衬底基板上形成栅极金属薄膜，通过构图工艺使所述栅极金属薄膜形成包括栅电极的栅极金属层；
在所述栅极金属层上形成栅极绝缘层；
在所述栅极绝缘层上形成金属氧化物薄膜，通过构图工艺使所述金属氧化物薄膜形成有源层的图案；
在所述有源层上制备金属纳米粒子层，所述金属纳米粒子层作为刻蚀保护层；
在完成上述工艺的所述衬底基板上形成源漏极金属薄膜，通过构图工艺使所述源漏极金属薄膜形成包括源电极和漏电极的源漏极金属层，所述源电极和所述漏电极覆盖部分所述金属纳米粒子层；
在含氧气氛中去除或氧化所述金属纳米粒子层未被所述源电极和所述漏电极覆盖的部分；
在所述源漏极金属层上形成钝化层。
本实施例中，以金属纳米粒子层作为有源层的保护层，可以在刻蚀源电极和漏电极时对有源层进行保护，避免有源层被腐蚀所造成的器件不良；同时金属纳米粒子层具有良好的导电性，具有较好的热稳定性，对金属氧化物薄膜晶体管的制备工艺要求较低，从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
优选的，以金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子和钴纳米粒子中的至少一种材料制备所述金属纳米粒子层。本实施例中，以金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子或钴纳米粒子等材料制备所述金属纳米粒子层，可以在后续刻蚀所述源电极和所述漏电极时对所述有源层进行保护，避免所述有源层被腐蚀所造成的器件不良。
优选的，在所述有源层上制备金属纳米粒子层，具体包括：
采用物理气相沉积、化学气相沉积、水热法、溶胶-凝胶法、喷雾热解法或热壁法在所述有源层上制备所述金属纳米粒子层。
优选的，以1～5纳米的厚度制备所述金属纳米粒子层。
优选的，通过利用氧等离子体来去除或氧化所述金属纳米粒子层未被所述源电极和所述漏电极覆盖的部分。
优选的，以具有缓冲层的玻璃基板作为所述衬底基板。
优选的，以具有水氧阻隔层的柔性基板作为所述衬底基板，以聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯、聚酰亚胺或者金属箔作为所述柔性基板的材料。
优选的，以铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备所述栅极金属薄膜，且以100～2000纳米 的厚度制备所述栅极金属薄膜。
优选的，以单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜制备所述栅极绝缘层，或者以至少两种以上单层的薄膜构成的复合薄膜制备所述栅极绝缘层，且以50～500纳米的厚度制备所述栅极绝缘层。
优选的，以含有In、Zn、Ga和Sn中的至少一种的金属氧化物制备所述有源层，且以10～200纳米的厚度制备所述有源层。
优选的，以铝薄膜、铜薄膜、钼薄膜和钛薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备所述源漏极金属薄膜，且以100～2000纳米的厚度制备所述源漏极金属薄膜。
优选的，钝化层可以为氧化硅、氮化硅、氧气化铝、氧化镱、聚酰亚胺、苯丙环丁烯或聚甲基丙烯酸甲酯中任意一种单层膜层或至少两种以上构成的复合膜层。优选的，钝化层的厚度为50～2000纳米。
本发明实施例提供一种薄膜晶体管，包括：
衬底基板；
形成于所述衬底基板上的栅极金属层，所述栅极金属层包括栅电极；
形成于所述栅极金属层之上的栅极绝缘层；
形成于所述栅极绝缘层之上的有源层；
形成于所述有源层之上的金属纳米粒子层，所述金属纳米粒子层作为刻蚀保护层；
形成于所述金属纳米粒子层之上的源漏极金属层，所述源漏极金属层包括源电极和漏电极；
形成于所述源漏极金属层之上的钝化层。
本发明实施例提供一种阵列基板，包括如上实施例提供的薄膜晶 体管。
本发明实施例提供一种显示面板，包括如上实施例提供的阵列基板。
本发明实施例有益效果如下：以金属纳米粒子层作为有源层的保护层，可以在刻蚀源电极和漏电极时对有源层进行保护，避免有源层被腐蚀所造成的器件不良；同时金属纳米粒子层具有良好的导电性，具有较好的热稳定性，对金属氧化物薄膜晶体管的制备工艺要求较低，从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
附图说明
图1为本发明实施例提供的金属氧化物薄膜晶体管的制备方法的流程图；
图2为本发明实施例中，制备完成栅电极的金属氧化物薄膜晶体管的结构示意图；
图3为本发明实施例中，制备完成栅极绝缘层的金属氧化物薄膜晶体管的结构示意图；
图4为本发明实施例中，制备完成有源层的金属氧化物薄膜晶体管的结构示意图；
图5为本发明实施例中，制备完成金属纳米粒子层的金属氧化物薄膜晶体管的结构示意图；
图6为本发明实施例中，制备完成源漏极金属薄膜的金属氧化物薄膜晶体管的结构示意图；
图7为本发明实施例中，制备完成源电极和漏电极的金属氧化物薄膜晶体管的结构示意图；
图8为本发明实施例中，去除未被源电极和漏电极覆盖的金属纳米粒子层的金属氧化物薄膜晶体管的结构示意图；
图9为本发明实施例中，制备完成钝化层的金属氧化物薄膜晶体管的结构示意图。
具体实施方式
下面结合说明书附图对本发明实施例的实现过程进行详细说明。需要注意的是，自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
参见图1，本发明实施例提供一种薄膜晶体管的制备方法，包括：
101，在衬底基板上形成栅极金属薄膜，通过构图工艺使栅极金属薄膜形成包括栅电极的栅极金属层。
根据金属氧化物薄膜晶体管的具体应用的不同，可以以具有缓冲层的玻璃基板作为衬底基板，也可以以具有水氧阻隔层的柔性基板作为衬底基板，优选的，以聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯、聚酰亚胺或者金属箔作为柔性基板的材料。优选的，以SiO2缓冲层或Si3N4层作为玻璃基板上的缓冲层。优选的，可以采用Al2O3层、Si3N4层、SiCN层、SiOx层、SiON层以及这些层的堆叠复合结构作为水氧阻隔层。
优选的，以铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备栅极金属薄膜，且以100～2000纳米的厚度制备栅极金属薄膜。
102，在栅极金属层上形成栅极绝缘层。
优选的，以单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜制备栅极绝缘层，或者以至少两种以上单层的薄膜构成的复合薄膜制备栅极绝缘层，且以50～500纳米的厚度制 备栅极绝缘层。
103，在栅极绝缘层上形成金属氧化物薄膜，通过构图工艺使金属氧化物薄膜形成有源层的图案。
优选的，以含有In、Zn、Ga和Sn中的至少一种的金属氧化物制备有源层，且以10～200纳米的厚度制备有源层。
104，在有源层上制备金属纳米粒子层，金属纳米粒子层作为刻蚀保护层。
具体的，可以采用物理气相沉积、化学气相沉积、水热法、溶胶-凝胶法、喷雾热解法或热壁法等工艺沉积金属纳米粒子层。
以金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子和钴纳米粒子中的至少一种材料制备金属纳米粒子层。优选的，以1～5纳米的厚度制备金属纳米粒子层。当然，其于成本考虑，金属纳米粒子层也可以采用成本更低的铍纳米粒子、镍纳米粒子和钴纳米粒子中的一种或以上。
需要说明的是，在沉积金属纳米粒子层后，还可以包括对金属纳米粒子层进行退火处理的工艺。
本实施例中，金属纳米粒子层可以在刻蚀源电极和漏电极时对有源层进行保护，避免有源层被腐蚀所造成的器件不良。
105，在完成上述工艺的衬底基板上形成源漏极金属薄膜，通过构图工艺使源漏极金属薄膜形成包括源电极和漏电极的源漏极金属层，源电极和漏电极覆盖部分金属纳米粒子层。
优选的，以铝薄膜、铜薄膜、钼薄膜和钛薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备源漏极金属薄膜，且以100～2000纳米的厚度制备源漏极金属薄膜。
106，在含氧气氛中去除或氧化金属纳米粒子层未被源电极和漏 电极覆盖的部分。
优选的，利用氧等离子体去除或氧化金属纳米粒子层未被源电极和漏电极覆盖的部分。
107，在源漏极金属层上形成钝化层。
优选的，以为氧化硅、氮化硅、氧气化铝、氧化镱、聚酰亚胺、苯丙环丁烯或聚甲基丙烯酸甲酯中任意一种单层膜层或至少两种以上构成的复合膜层制备钝化层，且以50～2000纳米的厚度制备钝化层。
需要说明的是，现有技术中也提供了采用有机导电薄膜在金属氧化物薄膜晶体管的背沟道刻蚀工艺中对有源层进行保护的方法，但是有机导电薄膜中的硅或碳的导电性相对较差，可能会造成有源层和源、漏电极的接触不良，使得金属氧化物薄膜晶体管不稳定；同时，有机导电薄膜的热稳定性差，会在后续的工序中分解造成金属氧化物薄膜晶体管不稳定或不良，且分解的有机导电薄膜会污染制备设备。金属纳米粒子层较有机导电薄膜具有更好的热稳定性，能够有效保护有源层，并使制备而成的金属氧化物薄膜晶体管更稳定，也不会污染制备设备。
本发明实施例有益效果如下：以金属纳米粒子层作为有源层的保护层，可以在刻蚀源电极和漏电极时对有源层进行保护，避免有源层被腐蚀所造成的器件不良；同时金属纳米粒子层具有良好的导电性，有利于与源电极和漏电极实现良好的导电接触，金属纳米粒子层较有机导电薄膜具有更好的热稳定性，对金属氧化物薄膜晶体管的制备工艺要求较低，从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
为了更详细的对本发明提供的金属氧化物薄膜晶体管的制备方 法进行说明，结合附图2至附图9举例如下：
实施例一
本发明实施例提供第一种具体的金属氧化物薄膜晶体管的制备方法，包括：
步骤一，在衬底基板1上使用物理气相沉积法沉积钼/铝/钼三层金属薄膜作为栅极金属薄膜，钼/铝/钼三层金属薄膜的厚度分别为25//100/25纳米，通过构图工艺使栅极金属薄膜形成栅电极2。衬底基板1为带有200纳米厚度的SiO2缓冲层的无碱玻璃基板。在衬底基板1上制备栅电极2后的示意图如图2所示。
步骤二，在完成上述步骤的衬底基板1上采用等离子体增强型化学气相沉积法沉积栅极绝缘层3。制备完成栅极绝缘层3后的示意图如图3所示。
栅极绝缘层3由300纳米的SiNx和30纳米的SiO2叠层而成。
步骤三，利用物理气相沉积法在栅极绝缘层3上沉积金属氧化物薄膜，通过构图工艺使金属氧化物薄膜形成有源层4的图案。金属氧化物薄膜为氧化铟锌IZO薄膜，其中铟和锌的原子比为1∶1。制备完成有源层4的示意图如图4所示。
步骤四，在有源层4上采用物理气相沉积法沉积5纳米厚的金纳米粒子用为金属纳米粒子层5。制备完成金属纳米粒子层5的示意图如图5所示。
金属纳米粒子层5可以在后续刻蚀源电极7和漏电极8(如图7所示)时对有源层4进行保护，避免有源层4被腐蚀造成的金属氧化物薄膜晶体管不良。
需要说明的是，在步骤四中，还可以包括对金属纳米粒子层5进行退火的工艺。
步骤五，在完成上述工艺的衬底基板1上，采用物理气相沉积法沉积钼/铝/钼叠层作为源漏极金属薄膜6，厚度分别为25//100/25纳米。制备完成源漏极金属薄膜6的示意图如图6所示。
使用30％的H2O2和1％的KOH的混合溶液作为湿法刻蚀液对源漏极金属薄膜6进行刻蚀，形成源电极7和漏电极8，源电极7和漏电极8覆盖部分金属纳米粒子层5。制备完成源电极7和漏电极8的示意图如图7所示。
步骤六，利用氧等离子体去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分。去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分后的示意图如图8所示。
步骤七，采用等离子体增强型化学气相沉积法在完成上述工艺的衬底基板1上沉积300纳米的SiO2作为钝化层9，即在包括源电极7和漏电极8的源漏极金属层上形成钝化层9。制备完成钝化层9的示意图如图9所示。
实践发现，采用金属纳米粒子层5在背沟道刻蚀工艺中对有源层4进行保护，较有机导电薄膜进行保护更稳定，而且金属纳米粒子层5导电性好、表面粗糙度大，非常有利于实现有源层4和源电极7、漏电极8之间的良好接触。
实施例二
本发明实施例提供第二种具体的金属氧化物薄膜晶体管的制备方法，包括：
步骤一，在衬底基板1，使用物理气相沉积法沉积铜金属薄膜作为栅极金属薄膜，铜金属薄膜的厚度分别为500纳米，通过构图工艺使栅极金属薄膜形成栅电极2。衬底基板1为带有50纳米厚度的Al2O3水氧阻隔层的柔性基板。在衬底基板1上制备栅电极2后的示意图如 图2所示。
步骤二，在完成上述步骤的衬底基板1上采用等离子体增强型化学气相沉积法沉积栅极绝缘层3。制备完成栅极绝缘层3后的示意图如图3所示。
栅极绝缘层3由200纳米的氧化铝和100纳米的氧化镱叠层而成。
步骤三，利用物理气相沉积法在栅极绝缘层3上沉积金属氧化物薄膜，通过构图工艺使金属氧化物薄膜形成有源层4的图案。金属氧化物薄膜为80纳米的氧化铟镓锌IGZO薄膜，其中铟、镓、锌的原子比为1∶1∶1。制备完成有源层4的示意图如图4所示。
步骤四，在有源层4上采用喷雾热解法制备2纳米厚的镍纳米粒子用为金属纳米粒子层5。制备完成金属纳米粒子层5的示意图如图5所示。
金属纳米粒子层5可以在后续刻蚀源电极7和漏电极8(如图7所示)时对有源层4进行保护，避免有源层4被腐蚀造成的金属氧化物薄膜晶体管不良。
需要说明的是，在步骤四中，还可以包括对金属纳米粒子层5进行退火的工艺。
步骤五，在完成上述工艺的衬底基板1上，采用物理气相沉积法沉积铜金属薄膜作为源漏极金属薄膜6，厚度分别为500纳米。制备完成源漏极金属薄膜6的示意图如图6所示。
使用H2O2和H2SO4的混合溶液作为湿法刻蚀液，对源漏极金属薄膜6进行刻蚀，形成源电极7和漏电极8，源电极7和漏电极8覆盖部分金属纳米粒子层5。制备完成源电极7和漏电极8的示意图如图7所示。
步骤六，利用氧等离子体去除金属纳米粒子层5未被源电极7和 漏电极8覆盖的部分。去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分后的示意图如图8所示。
步骤七，采用等离子体增强型化学气相沉积法在完成上述工艺的衬底基板1上沉积800纳米的聚酰亚胺作为钝化层9，即在包括源电极7和漏电极8的源漏极金属层上形成钝化层9。制备完成钝化层9的示意图如图9所示。
实践发现，采用金属纳米粒子层5在背沟道刻蚀工艺中对有源层4进行保护，较有机导电薄膜进行保护更稳定，而且金属纳米粒子层导电性好、表面粗糙，非常有利于实现有源层4和源电极7、漏电极8之间的良好接触。
实施例三
本发明实施例提供第三种具体的金属氧化物薄膜晶体管的制备方法，包括：
步骤一，在衬底基板1，使用物理气相沉积法沉积ITO薄膜作为栅极金属薄膜，ITO薄膜的厚度分别为200纳米，通过构图工艺使栅极金属薄膜形成栅电极2。衬底基板1为带有200纳米厚度的Si3N4水氧阻隔层的柔性基板。在衬底基板1上制备栅电极2后的示意图如图2所示。
步骤二，在完成上述步骤的衬底基板1上采用等离子体增强型化学气相沉积法沉积栅极绝缘层3。制备完成栅极绝缘层3后的示意图如图3所示。
栅极绝缘层3由100纳米的氧化硅、90纳米的五氧化二钽和20纳米的二氧化硅叠层而成。
步骤三，利用物理气相沉积法在栅极绝缘层3上沉积金属氧化物薄膜，通过构图工艺使金属氧化物薄膜形成有源层4的图案。金属氧 化物薄膜为50纳米的IZO薄膜，其中铟和锌的原子比为1∶1。制备完成有源层4的示意图如图4所示。
步骤四，在有源层4上采用溶液处理方法制备3纳米厚的银纳米粒子用为金属纳米粒子层5。制备完成金属纳米粒子层5的示意图如图5所示。
金属纳米粒子层5可以在后续刻蚀源电极7和漏电极8(如图7所示)时对有源层4进行保护，避免有源层4被腐蚀造成的金属氧化物薄膜晶体管不良。
需要说明的是，在步骤四中，还可以包括对金属纳米粒子层5进行退火的工艺。
步骤五，在完成上述工艺的衬底基板1上，采用物理气相沉积法沉积铜金属薄膜作为源漏极金属薄膜6，源漏极金属薄膜6为单层钼薄膜，厚度分别为200纳米。制备完成源漏极金属薄膜6的示意图如图6所示。
使用H2O2和H2SO4的混合溶液作为湿法刻蚀液，对源漏极金属薄膜6进行刻蚀，形成源电极7和漏电极8，源电极7和漏电极8覆盖部分金属纳米粒子层5。制备完成源电极7和漏电极8的示意图如图7所示。
步骤六，利用氧等离子体去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分。去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分后的示意图如图8所示。
步骤七，采用等离子体增强型化学气相沉积法在完成上述工艺的衬底基板1上沉积300纳米的SiO2作为钝化层9，即在包括源电极7和漏电极8的源漏极金属层上形成钝化层9。制备完成钝化层9的示意图如图9所示。
实践发现，采用金属纳米粒子层5在背沟道刻蚀工艺中对有源层4进行保护，较有机导电薄膜进行保护更稳定，而且金属纳米粒子层导电性好、表面粗糙，非常有利于实现有源层4和源电极7、漏电极8之间的良好接触。
上述实施例一至实施例三仅是为了说明本发明所提供的部分具体实施例，本发明并不以此为限。所制备的金属氧化物薄膜晶体管可以用于液晶显示器、有源矩阵有机发光二极管显示器。实施例一至实施例三中各步骤中涉及的薄膜厚度、组成材料、配比比例等可以根据实际要求进行调整。
如图9所示，本发明实施例还提供一种薄膜晶体管，该薄膜晶体管为金属氧化物薄膜晶体管，包括：
衬底基板1；
形成于衬底基板1上的栅极金属层，栅极金属层包括栅电极2；
形成于栅极金属层之上的栅极绝缘层3；
形成于栅极绝缘层之上的有源层4；
形成于有源层4之上的金属纳米粒子层5，金属纳米粒子层5作为刻蚀保护层；
形成于金属纳米粒子层5之上的源漏极金属层，源漏极金属层包括源电极7和漏电极8；
形成于源漏极金属层之上的钝化层9。
需要说明的是，虚线框10所示的部分，为金属纳米粒子层5已经被去除的部分，是在形成源电极7和漏电极8之后去除。金属纳米粒子层5的该被去除的部分在制备源电极7和漏电极8时，能够对有源层4进行保护。
优选的，金属纳米粒子层5包括金纳米粒子、银纳米粒子、铂纳 米粒子、铍纳米粒子、镍纳米粒子和钴纳米粒子中的至少一种。
优选的，金属纳米粒子层5的厚度为1～5纳米。
优选的，衬底基板1为具有缓冲层的玻璃基板。
优选的，衬底基板1为具有水氧阻隔层的柔性基板，柔性基板的材料为聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯、聚酰亚胺或者金属箔。
优选的，栅极金属层为铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层，栅极金属层的厚度为100～2000纳米。需要说明的是，栅极金属层的材料和厚度即为制备方法中栅极金属薄膜的材料和厚度。
优选的，栅极绝缘层3为单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜，或者栅极绝缘层3为至少两种以上单层的薄膜构成的复合薄膜，栅极绝缘层3的厚度为50～500纳米。
优选的，有源层4含有In、Zn、Ga和Sn中的至少一种的金属氧化物，有源层4的厚度为10～200纳米。
优选的，源漏极金属层为铝薄膜、铜薄膜、钼薄膜和钛薄膜中任意一种单层膜层或至少两种以上构成的复合膜层；源漏极金属层的厚度为100～2000纳米。需要说明的是，源漏极金属层的材料和厚度即为制备方法中源漏极金属薄膜的材料和厚度。
优选的，钝化层9可以为氧化硅、氮化硅、氧气化铝、氧化镱、聚酰亚胺、苯丙环丁烯或聚甲基丙烯酸甲酯中任意一种单层膜层或至少两种以上构成的复合膜层。优选的，钝化层9的厚度为50～2000纳米。
本发明实施例有益效果如下：以金属纳米粒子层作为有源层的保护层，可以在刻蚀源电极和漏电极时对有源层进行保护，避免有源层被腐蚀所造成的器件不良；同时金属纳米粒子层具有良好的导电性，具有较好的热稳定性，对金属氧化物薄膜晶体管的制备工艺要求较低，从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
基于相同的发明构思，本发明实施例还提供一种阵列基板，包括如上实施例提供的薄膜晶体管。
本发明实施例有益效果如下：该阵列基板中，金属氧化物薄膜晶体管以金属纳米粒子层作为有源层的保护层，可以在刻蚀源电极和漏电极时对有源层进行保护，避免有源层被腐蚀所造成的器件不良；同时金属纳米粒子层具有良好的导电性，具有较好的热稳定性，对金属氧化物薄膜晶体管的制备工艺要求较低，从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
基于相的发明构思，本发明实施例提供一种显示面板，包括如上实施例提供的阵列基板。
本发明实施例有益效果如下：该显示面板所应用的阵列基板中，金属氧化物薄膜晶体管以金属纳米粒子层作为有源层的保护层，可以在刻蚀源电极和漏电极时对有源层进行保护，避免有源层被腐蚀所造成的器件不良；同时金属纳米粒子层具有良好的导电性，具有较好的热稳定性，对金属氧化物薄膜晶体管的制备工艺要求较低，从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (15)

  1. 一种薄膜晶体管的制备方法，其特征在于，包括：
    在衬底基板上形成栅极金属薄膜，通过构图工艺使所述栅极金属薄膜形成包括栅电极的栅极金属层；
    在所述栅极金属层上形成栅极绝缘层；
    在所述栅极绝缘层上形成金属氧化物薄膜，通过构图工艺使所述金属氧化物薄膜形成有源层的图案；
    在所述有源层上制备金属纳米粒子层，所述金属纳米粒子层作为刻蚀保护层；
    在完成上述工艺的所述衬底基板上形成源漏极金属薄膜，通过构图工艺使所述源漏极金属薄膜形成包括源电极和漏电极的源漏极金属层，所述源电极和所述漏电极覆盖部分所述金属纳米粒子层；
    在含氧气氛中去除或氧化所述金属纳米粒子层未被所述源电极和所述漏电极覆盖的部分；
    在所述源漏极金属层上形成钝化层。
  2. 如权利要求1所述的制备方法，其特征在于，以金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子和钴纳米粒子中的至少一种材料制备所述金属纳米粒子层。
  3. 如权利要求2所述的制备方法，其特征在于，在所述有源层上制备金属纳米粒子层包括：
    采用物理气相沉积、化学气相沉积、水热法、溶胶-凝胶法、喷雾热解法或热壁法在所述有源层上制备所述金属纳米粒子层。
  4. 如权利要求2所述的制备方法，其特征在于，以1～5纳米的厚度制备所述金属纳米粒子层。
  5. 如权利要求1至4任意一项所述的制备方法，其特征在于，以具有缓冲层的玻璃基板作为所述衬底基板。
  6. 如权利要求1至4任意一项所述的制备方法，其特征在于，以具有水氧阻隔层的柔性基板作为所述衬底基板，以聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯、聚酰亚胺或者金属箔作为所述柔性基板的材料。
  7. 根据权利要求1至4任意一项所述的制备方法，其特征在于，以铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备所述栅极金属薄膜，且以100～2000纳米的厚度制备所述栅极金属薄膜。
  8. 根据权利要求1至4任意一项所述的制备方法，其特征在于，以单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜制备所述栅极绝缘层，或者以至少两种以上单层的薄膜构成的复合薄膜制备所述栅极绝缘层，且以50～500纳米的厚度制备所述栅极绝缘层。
  9. 根据权利要求1至4任意一项所述的制备方法，其特征在于，以含有In、Zn、Ga和Sn中的至少一种的金属氧化物制备所述有源层，且以10～200纳米的厚度制备所述有源层。
  10. 根据权利要求1至4任意一项所述的制备方法，其特征在于，以铝薄膜、铜薄膜、钼薄膜和钛薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备所述源漏极金属薄膜，且以100～2000纳米的厚度制备所述源漏极金属薄膜。
  11. 如权利要求1所述的制备方法，其特征在于，利用氧等离子体去除或氧化所述金属纳米粒子层未被所述源电极和所述漏电极覆 盖的部分。
  12. 如权利要求1所述的制备方法，其特征在于，以氧化硅、氮化硅、氧气化铝、氧化镱、聚酰亚胺、苯丙环丁烯或聚甲基丙烯酸甲酯中任意一种单层膜层或至少两种以上构成的复合膜层制备所述钝化层，且以50～2000纳米的厚度制备所述钝化层。
  13. 一种薄膜晶体管，其特征在于，包括：
    衬底基板；
    形成于所述衬底基板上的栅极金属层，所述栅极金属层包括栅电极；
    形成于所述栅极金属层之上的栅极绝缘层；
    形成于所述栅极绝缘层之上的有源层；
    形成于所述有源层之上的金属纳米粒子层，所述金属纳米粒子层作为刻蚀保护层；
    形成于所述金属纳米粒子层之上的源漏极金属层，所述源漏极金属层包括源电极和漏电极；
    形成于所述源漏极金属层之上的钝化层。
  14. 一种阵列基板，其特征在于，包括如权利要求13所述的薄膜晶体管。
  15. 一种显示面板，其特征在于，包括如权利要求14所述的阵列基板。
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