WO2017138183A1 - Dispositif de traitement de substrat, partie de jonction, et procédé de fabrication de dispositif à semi-conducteur - Google Patents

Dispositif de traitement de substrat, partie de jonction, et procédé de fabrication de dispositif à semi-conducteur Download PDF

Info

Publication number
WO2017138183A1
WO2017138183A1 PCT/JP2016/077143 JP2016077143W WO2017138183A1 WO 2017138183 A1 WO2017138183 A1 WO 2017138183A1 JP 2016077143 W JP2016077143 W JP 2016077143W WO 2017138183 A1 WO2017138183 A1 WO 2017138183A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
sealing member
heating
substrate
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/077143
Other languages
English (en)
Japanese (ja)
Inventor
山口　天和
谷山　智志
隆史 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2017566504A priority Critical patent/JP6561148B2/ja
Priority to KR1020187009658A priority patent/KR102133547B1/ko
Publication of WO2017138183A1 publication Critical patent/WO2017138183A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Definitions

  • the present invention relates to a substrate processing apparatus, a joint portion, and a method for manufacturing a semiconductor device.
  • a process for forming a film on the substrate may be performed. Before supplying the processing gas into the processing chamber of the substrate processing apparatus, the processing gas is heated in advance, thereby processing gas. Attempts have been made to improve the uniformity of the film by controlling the thermal decomposition of the film.
  • connection part is interposed in the connection part of a gas supply pipe and a gas introduction port (for example, patent documents 1). If the processing gas is heated to a temperature higher than the heat resistance temperature of the connection part, the connection part may be deteriorated. Therefore, the processing gas cannot be heated to a temperature higher than the heat resistance temperature of the connection part, and the process gas is thermally decomposed. It was sometimes difficult to control.
  • An object of the present invention is to provide a technique capable of improving the uniformity of a film formed on a substrate.
  • a gas inlet configured to introduce gas into a reaction tube for processing the substrate;
  • a heating unit for heating the gas outside the reaction tube;
  • a connection part installed between the gas introduction part and the heating part,
  • the connecting portion is An outer pipe connected to the gas introduction part via a sealing member;
  • a technique is provided that includes an inner tube that has a smaller diameter than the outer tube, one end connected to the heating unit, and the other end extending to at least a position where the sealing member is installed.
  • the uniformity of a film formed on a substrate can be improved.
  • the substrate processing apparatus is configured as a processing apparatus 2 that performs a substrate processing step such as a heat treatment as one step of a manufacturing step in a manufacturing method of a semiconductor device (device).
  • the processing apparatus 2 includes a cylindrical reaction tube 10 and a heater 12 as a heating unit (heating mechanism) installed on the outer periphery of the reaction tube 10.
  • the reaction tube is made of, for example, quartz or SiC.
  • a processing chamber 14 for processing a wafer W as a substrate is formed inside the reaction tube 10.
  • a temperature detection unit 16 as a temperature detector is erected along the inner wall of the reaction tube 10.
  • a cylindrical manifold 18 is connected to the lower end opening of the reaction tube 10 via a seal member 20 such as an O-ring to support the lower end of the reaction tube 10.
  • the manifold 18 is formed of a metal such as stainless steel.
  • a plurality of gas ports (gas introduction portions) to be described later are formed on the side wall of the manifold.
  • the lower end opening of the manifold 18 is opened and closed by a disk-shaped lid 22.
  • the lid 22 is made of metal, for example.
  • a sealing member 20 such as an O-ring is installed on the upper surface of the lid portion 22 so that the inside of the reaction tube 10 and the outside air are hermetically sealed.
  • the heat insulating portion 24 is formed of a cylindrical member made of a heat resistant material such as quartz or SiC.
  • the processing chamber 14 stores therein a boat 26 as a substrate holder for supporting a plurality of, for example, 25 to 150 wafers W vertically in a shelf shape.
  • the boat 26 is made of, for example, quartz or SiC.
  • the boat 26 is supported above the heat insulating portion 24 by a rotating shaft 28 that passes through the holes of the lid portion 22 and the heat insulating portion 24.
  • a magnetic fluid seal is provided at a portion of the lid portion 22 through which the rotation shaft 28 passes, and the rotation shaft 28 is connected to a rotation mechanism 30 installed below the lid portion 22.
  • the rotating shaft 28 is configured to be rotatable in a state where the inside of the reaction tube 10 is hermetically sealed.
  • the lid portion 22 is driven in the vertical direction by a boat elevator 32 as a lifting mechanism. As a result, the boat 26 and the lid portion 22 are integrally moved up and down, and the boat 26 is carried into and out of the reaction tube 10.
  • the processing apparatus 2 includes a gas supply mechanism 34 that supplies a gas used for substrate processing into the processing chamber 14.
  • the gas supplied by the gas supply mechanism 34 is changed according to the type of film to be formed.
  • the gas supply mechanism 34 includes a source gas supply unit, a reaction gas supply unit, and an inert gas supply unit.
  • the raw material gas supply unit includes a gas supply pipe 36a.
  • a gas flow controller (MFC) 38a which is a flow rate controller (flow rate control unit), and a valve 40a, which is an on-off valve, are provided in order from the upstream direction. It is done.
  • the gas supply pipe 36a may be provided with a preheating device 70 and a connecting portion 80 described later.
  • the nozzle 44 a is erected in the vertical direction in the reaction tube 10 and has a plurality of supply holes that open toward the wafers W held by the boat 26. The source gas supplied from the gas supply pipe 36a is supplied to the wafer W through the supply hole of the nozzle 44a.
  • the reaction gas supply unit includes a gas supply pipe 36b, and an MFC 38b, a valve 40b, and a preheating device 70 are provided in this order from the upstream direction.
  • the gas supply pipe 36b is connected to the nozzle 44b via a connecting portion 80 described later.
  • the connecting portion 80 may be included in the gas supply pipe 36b. From the inert gas supply unit, an inert gas is supplied to the wafer W via supply pipes 36c and 36d, MFCs 38c and 38d, valves 40c and 40d, and nozzles 44a and 44b.
  • An exhaust pipe 46 is attached to the manifold 18.
  • the exhaust pipe 46 is connected with a pressure sensor 48 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 14 and an APC (Auto Pressure Controller) valve 40 as a pressure regulator (pressure adjustment unit).
  • a vacuum pump 52 as an evacuation device is connected.
  • Rotating mechanism 30, boat elevator 32, MFCs 38a to 38d and valves 40a to 40d of gas supply mechanism 34, APC valve 50, and preheating device 70 are connected to controller 100 for controlling them.
  • the controller 100 is composed of, for example, a microprocessor (computer) having a CPU, and is configured to control the operation of the processing device 2.
  • an input / output device 102 configured as a touch panel or the like is connected to the controller 100.
  • the controller 100 is connected to a storage unit 104 as a storage medium.
  • the storage unit 104 stores a control program for controlling the operation of the processing device 10 and a program (also referred to as a recipe) for causing each component unit of the processing device 2 to execute processing according to processing conditions in a readable manner.
  • the control program for controlling the operation of the processing device 10
  • a program also referred to as a recipe
  • the storage unit 104 may be a storage device (hard disk or flash memory) built in the controller 100, or a portable external recording device (magnetic disk such as magnetic tape, flexible disk or hard disk, CD or DVD, etc. It may be an optical disk, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card. Further, the program may be provided to the computer using a communication means such as the Internet or a dedicated line. The program is read from the storage unit 104 according to an instruction from the input / output device 102 as necessary, and the controller 100 executes processing according to the read recipe, so that the processing device 2 Under the control of 100, a desired process is executed.
  • a storage device hard disk or flash memory
  • a portable external recording device magnetic disk such as magnetic tape, flexible disk or hard disk, CD or DVD, etc. It may be an optical disk, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card.
  • the program may be
  • nozzle 44 includes a case where only the nozzle 44a is shown, a case where only the nozzle 44b is shown, and a case where both of them are shown. The same applies to other configurations.
  • a gas introduction part (port) 60 that holds the base of the inserted nozzle 44 is formed in a hollow cylindrical shape so as to protrude to the outside of the manifold 18.
  • the nozzle 44 is held by the port 60 while the base of the nozzle 44 is inserted into the opening 19 provided in the manifold 18.
  • the nozzle 44 and the port 60 are in close contact with each other, and the reaction container is configured to be kept airtight.
  • One end of the port 60 (the processing chamber 14 side and the downstream end) is configured to airtightly seal the outer periphery of the opening 19 provided in the manifold 18.
  • a thread 61 as a fixing portion is provided on the outer peripheral surface of the other end (upstream end portion) of the port 60.
  • the diameter of the inner peripheral surface of the thread 61 portion that is the other end of the port 60 is formed larger than the diameter of the inner peripheral surface of the intermediate portion at both ends of the port 60.
  • the other end of the port 60 is formed so that the inner diameter becomes one size larger.
  • a gap 62 is provided between the thread 61 of the port 60 and the nozzle 44.
  • the gap portion 62 is provided with an O-ring 63 as a sealing member (seal member). Further, an end portion of an outer tube 82 of a connecting portion 80 described later is fitted, whereby the port 60 and the outer tube 82 are connected. It is configured to be connected and engaged through an O-ring 63.
  • the connecting portion 80 On the upstream side of the port 60, a connecting portion 80 as a joint portion is installed.
  • the port 60 and the preheating device 70 are connected via a connection unit 80.
  • the preheating device 70 is configured as a heating unit that heats the processing gas to a predetermined temperature outside the reaction tube 10 in advance, for example, a temperature higher than the heat resistant temperature of the O-ring 63.
  • the connection unit 80 may be configured to connect the port 60 and the gas supply pipe 36.
  • the connecting portion 80 is constituted by an inner tube 81 and an outer tube 82.
  • the nut 85 may be included in the configuration of the connecting portion 80.
  • the inner tube 81 and the outer tube 82 are formed in a hollow cylindrical (columnar) shape.
  • the outer diameter of the inner tube 81 is smaller than the inner diameter of the outer tube 82 and the outer diameter of the nozzle 44.
  • An outer tube 82 is provided outside the inner tube 81.
  • the outer tube 82 has a shape in which one end (upstream side, end portion on the preheating device 70 side) is closed and the other end (downstream side, end portion on the port 60 side) is opened.
  • the connection wall 83 is welded to the outer surface of the inner tube 81.
  • the inner tube 81 is configured to penetrate the outer tube 82, and the outer tube 82 and the inner tube 81 are integrally formed. Further, the entire length of the inner tube 81 is longer than the entire length of the outer tube 80.
  • the connecting portion 80 has a double tube structure of an outer tube 82 and an inner tube 81.
  • the inner diameter of the intermediate portion at both ends of the outer tube 82 is formed to be the same as the inner diameter of the nozzle 44.
  • the other end of the outer tube 82 is provided with a stepped portion 84 that interferes with a nut 85 described later.
  • the outer circumference and inner circumference diameter of the other end of the outer tube 82 are formed larger than the outer circumference and inner circumference diameter of one end.
  • the inner diameter of the other end of the outer tube 82 is formed to be larger than the outer diameter of the nozzle 44.
  • An open end 89 that is an end portion on the downstream side (port 60 side) of the inner tube 81 is formed to extend further downstream than the other end of the outer tube 82.
  • the inner tube 81 is formed so as to extend into the port 60, that is, into the nozzle 44.
  • the nut 85 as a fixing member has an opening 87 having a diameter slightly larger than the outer diameter of the outer tube 82, and is attached to be rotatable around the outer tube 82.
  • connection between the port 60 and the connection unit 80 will be described with reference to FIG.
  • a part of the stepped portion 64 of the connection portion 80 is fitted into the gap 62 provided inside the thread 61 of the port 60 together with the 0 ring 63 as a sealing member.
  • the thread 61 on the port side and the thread 86 on the nut 85 side are fitted.
  • the step portion 84 is pushed by the step receiving portion 88 of the nut 85, the O-ring 63 is crushed and the port 60 and the connection portion 80 can be connected in an airtight manner.
  • the open end 89 of the inner pipe 81 is located downstream of the O-ring 63, that is, in the nozzle 44 (in the port 60).
  • the heated gas directly comes into contact with the periphery of the O-ring installation portion at a high temperature.
  • the O-ring installation portion is heated to a temperature higher than the heat-resistant temperature of the O-ring, and the O-ring may be deteriorated. Therefore, it has been difficult to heat the gas to a temperature higher than the heat resistance temperature of the O-ring, for example, higher than 100 to 350 ° C. which is a heat resistance temperature of a general O-ring.
  • the present embodiment as shown in FIG. 7, even when a high-temperature gas flows in the inner pipe 81, the temperature around the O-ring is maintained at about half or less of the temperature in the inner pipe 81. I understand that.
  • the O-ring it is possible to prevent the O-ring from being heated to a temperature higher than the heat-resistant temperature by setting the O-ring to have a double-pipe structure and suppressing direct contact with high-temperature gas.
  • the inner tube 81 may be extended to the opening 19. By extending the inner pipe 81 to the opening 19, it is possible to prevent the high temperature gas from being cooled before being supplied into the reaction pipe 10.
  • connection part 80 is formed of a metal material that is heat resistant to high-temperature gas and hardly causes metal contamination.
  • the connection part 80 is formed of a metal to which aluminum is added.
  • an alumina film is formed on the inner wall surface of the connecting portion 80, that is, the gas flow path through which the gas flows.
  • the alumina film can be formed, for example, by firing a metal material as described above.
  • the alumina coating is preferably formed on the wall surface of a gas flow path formed of a metal material through which at least a high-temperature gas flows.
  • the preheating device 70 may be formed of the same material as that of the connection portion 80. Further, for example, the preheating device 70 and the connecting portion 80 may be integrally formed. With such a configuration, it is possible to prevent the heated gas from being cooled (heat radiation) due to the difference in material between the preheating device 70 and the connection portion 80, and to further reduce metal contamination.
  • the processing gas heated to a high temperature by the preheating device 70 can be supplied into the processing apparatus 2, the desired gas decomposition control can be performed, and the uniformity of the film is improved. Can be made. Since the heated gas flows through the inner pipe portion, the high-temperature gas does not directly contact the periphery of the O-ring of the outer pipe. Further, the processing gas that circulates around the O-ring after exiting the inner pipe 81 is equal to or lower than the heat resistance temperature of the O-ring. Thereby, even if the gas is heated to a temperature higher than the heat resistant temperature of the O-ring, the deterioration of the O-ring can be suppressed, and the breakage and deterioration of the O-ring can be prevented.
  • the periphery of the O-ring 63 can be cooled by providing an annular cooling flow path 64 in the vicinity of the thread 63 and the gap 62 of the port 60 and flowing cooling water therein. Further, the risk of damage to the O-ring 63 can be further reduced. With such a configuration, the processing gas can be heated to a higher temperature.
  • the annular cooling flow path 64 is not limited to the configuration embedded in the port 60, and may be configured such that a water cooling tube is wound around the outer periphery of the connection portion 80.
  • the processing chamber 14 is evacuated (reduced pressure) by the vacuum pump 52 so that the inside of the processing chamber 14 has a predetermined pressure (degree of vacuum).
  • the pressure in the processing chamber 14 is measured by the pressure sensor 48, and the APC valve 50 is feedback-controlled based on the measured pressure information.
  • the wafer W in the processing chamber 14 is heated by the heater 12 so as to reach a predetermined temperature.
  • the power supply to the heater 12 is feedback-controlled based on the temperature information detected by the temperature detector 16 so that the processing chamber 14 has a predetermined temperature distribution. Further, the rotation of the boat 26 and the wafer W by the rotation mechanism 30 is started.
  • the preheating device 70 is turned on.
  • the preheating device 70 is turned off or lower than the film forming temperature before and after the film forming process.
  • the O 2 gas is heated to a high temperature, for example, 800 ° C. by the preheating device 70.
  • the O 2 gas is controlled to have a desired flow rate by the MFC 38b, and is supplied into the processing chamber 14 through the gas supply pipe 36b, the preheating device 70, the connection portion 80, and the nozzle 44b. With such a configuration, the O 2 gas can be heated to a high temperature in advance before being introduced into the processing chamber 14.
  • Examples of processing conditions for forming the SiO film on the wafer W include the following. Processing temperature (wafer temperature): 300 ° C. to 1000 ° C. Processing pressure (pressure in processing chamber) 1 Pa to 4000 Pa, DCS gas: 100 sccm to 10,000 sccm, O 2 gas: 100 sccm to 10,000 sccm, N 2 gas: 100 sccm to 10,000 sccm, By setting each processing condition to a value within the respective range, it is possible to appropriately progress the film forming process.
  • the processing gas can be heated to a high temperature higher than the heat resistant temperature of the O-ring, it is possible to promote decomposition of the processing gas and improve reactivity. Thereby, the quality of film formation can be improved, and the yield of devices can be improved.
  • the O-ring installation part a double tube structure of an inner tube and an outer tube, it is possible to suppress the heat of the processing gas flowing in the inner tube from being propagated around the O-ring. Thereby, since an O-ring can be maintained below heat-resistant temperature, deterioration of an O-ring can be suppressed and an apparatus operation rate can be improved.
  • a connecting part may be included in the gas supply pipe.
  • the end of the gas supply pipe (the side connected to the gas introduction port) may have the same configuration as the connection.
  • the connecting portion may be welded and fixed to the end portion of the gas supply pipe.
  • the processing gas is heated by passing the processing gas into the preheating device.
  • an external heater such as a tape heater is installed in the gas supply pipe so that the processing gas passing through the gas supply pipe is heated. Also good.
  • the present invention can be applied to the case where the source gas is heated.
  • connection portion 80 may have a flange shape and may be fixed with screws. Even in these cases, similarly to the above-described embodiment, the temperature of the connection portion can be maintained at a temperature equal to or lower than the heat resistance temperature of each sealing member.
  • the present invention is not limited to such an aspect.
  • the present invention can be suitably applied to a case where a processing gas is heated and used in a process such as an oxidation process, a diffusion process, an annealing process, and an etching process on a wafer W or a film formed on the wafer W. It is.
  • a processing gas is heated and used in a process such as an oxidation process, a diffusion process, an annealing process, and an etching process on a wafer W or a film formed on the wafer W.
  • a processing gas is heated and used in a process such as an oxidation process, a diffusion process, an annealing process, and an etching process on a wafer W or a film formed on the wafer W.
  • a vertical apparatus it can apply suitably also to a single wafer apparatus.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Le problème décrit par l'invention est d'élaborer une technologie qui permette d'améliorer l'uniformité dans un film formé sur un substrat. La solution de l'invention porte sur un dispositif de traitement de substrat qui comprend : une unité d'introduction de gaz constituée de manière à introduire du gaz dans un tuyau de réaction pour le traitement du substrat; une unité de chauffage pour chauffer le gaz à l'extérieur du tuyau de réaction; et une unité de raccordement disposée entre l'unité d'introduction de gaz et l'unité de chauffage. L'unité de raccordement est constituée : d'un tuyau extérieur raccordé à l'unité d'introduction de gaz par l'intermédiaire d'un élément d'étanchéité; et d'un tuyau intérieur formé avec un plus petit diamètre que le tuyau extérieur, ayant une extrémité raccordée à l'unité de chauffage, et l'autre extrémité s'étendant au moins jusqu'à la position où l'élément d'étanchéité est disposé.
PCT/JP2016/077143 2016-02-08 2016-09-14 Dispositif de traitement de substrat, partie de jonction, et procédé de fabrication de dispositif à semi-conducteur Ceased WO2017138183A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017566504A JP6561148B2 (ja) 2016-02-08 2016-09-14 基板処理装置、継手部および半導体装置の製造方法
KR1020187009658A KR102133547B1 (ko) 2016-02-08 2016-09-14 기판 처리 장치, 이음부 및 반도체 장치의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-021845 2016-02-08
JP2016021845 2016-02-08

Publications (1)

Publication Number Publication Date
WO2017138183A1 true WO2017138183A1 (fr) 2017-08-17

Family

ID=59563778

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/077143 Ceased WO2017138183A1 (fr) 2016-02-08 2016-09-14 Dispositif de traitement de substrat, partie de jonction, et procédé de fabrication de dispositif à semi-conducteur

Country Status (3)

Country Link
JP (1) JP6561148B2 (fr)
KR (1) KR102133547B1 (fr)
WO (1) WO2017138183A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020194972A (ja) * 2020-08-12 2020-12-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990012126A1 (fr) * 1989-03-31 1990-10-18 Canon Kabushiki Kaisha Procede pour former un film polycristallin par depot en phase gazeuse par voie chimique
JPH0325230U (fr) * 1989-07-20 1991-03-15
JPH0471898U (fr) * 1990-10-29 1992-06-25
JPH04187592A (ja) * 1990-11-22 1992-07-06 Anelva Corp Ｃｖｄ装置
JPH10231970A (ja) * 1997-02-21 1998-09-02 Mitsubishi Heavy Ind Ltd 真空断熱配管継手
JP2010045251A (ja) * 2008-08-14 2010-02-25 Shin Etsu Handotai Co Ltd 縦型熱処理装置及び熱処理方法
JP2010090422A (ja) * 2008-10-07 2010-04-22 Soken Kogyo Kk 流体加熱装置およびこれを利用した半導体処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090001187U (ko) * 2007-07-30 2009-02-04 최양일 배관 보호관 어셈블리 및 이를 포함하는 배관 보호상자

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990012126A1 (fr) * 1989-03-31 1990-10-18 Canon Kabushiki Kaisha Procede pour former un film polycristallin par depot en phase gazeuse par voie chimique
JPH0325230U (fr) * 1989-07-20 1991-03-15
JPH0471898U (fr) * 1990-10-29 1992-06-25
JPH04187592A (ja) * 1990-11-22 1992-07-06 Anelva Corp Ｃｖｄ装置
JPH10231970A (ja) * 1997-02-21 1998-09-02 Mitsubishi Heavy Ind Ltd 真空断熱配管継手
JP2010045251A (ja) * 2008-08-14 2010-02-25 Shin Etsu Handotai Co Ltd 縦型熱処理装置及び熱処理方法
JP2010090422A (ja) * 2008-10-07 2010-04-22 Soken Kogyo Kk 流体加熱装置およびこれを利用した半導体処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020194972A (ja) * 2020-08-12 2020-12-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
JP7038770B2 (ja) 2020-08-12 2022-03-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、プログラム

Also Published As

Publication number Publication date
JP6561148B2 (ja) 2019-08-14
KR102133547B1 (ko) 2020-07-13
JPWO2017138183A1 (ja) 2018-12-20
KR20180050709A (ko) 2018-05-15

Similar Documents

Publication Publication Date Title
US11222796B2 (en) Substrate processing apparatus
KR102074668B1 (ko) 기판 처리 장치, 석영 반응관, 클리닝 방법 및 프로그램
JP6605398B2 (ja) 基板処理装置、半導体の製造方法およびプログラム
US10351951B2 (en) Substrate treatment apparatus including reaction tube with opened lower end, furnace opening member, and flange configured to cover upper surface of the furnace opening member
WO2014192871A1 (fr) Appareil de traitement de substrat, procédé de fabrication d'appareil de fabrication de semi-conducteur et corps de couvercle d'ouverture de four
KR102076643B1 (ko) 기판 처리 장치 및 반도체 장치의 제조 방법
JP2020017757A (ja) 基板処理装置、反応容器および半導体装置の製造方法
US20180087709A1 (en) Substrate processing apparatus and heat insulating pipe structure
US11219096B2 (en) Substrate processing apparatus and furnace opening assembly thereof
US9793112B2 (en) Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
KR102935300B1 (ko) 노구부 구조, 기판 처리 장치 및 반도체 장치의 제조 방법
KR20170090967A (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
TW202316560A (zh) 支撐件、基板處理裝置、及半導體裝置的製造方法
JP6561148B2 (ja) 基板処理装置、継手部および半導体装置の製造方法
WO2018150537A1 (fr) Dispositif de traitement de substrat, procédé de fabrication de dispositif à semiconducteur, et programme
JP4782761B2 (ja) 成膜装置
WO2016046947A1 (fr) Porte-substrats, appareil de traitement de substrats et procédé de fabrication de dispositifs à semi-conducteur
WO2025158707A1 (fr) Système de régulation de température, procédé de régulation de température, procédé de fabrication de dispositif à semi-conducteur et dispositif de traitement de substrat

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16889884

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20187009658

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2017566504

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16889884

Country of ref document: EP

Kind code of ref document: A1