WO2017177779A1 - Procédé de préparation pour réseau de del à électrodes de grande surface - Google Patents

Procédé de préparation pour réseau de del à électrodes de grande surface Download PDF

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Publication number
WO2017177779A1
WO2017177779A1 PCT/CN2017/076030 CN2017076030W WO2017177779A1 WO 2017177779 A1 WO2017177779 A1 WO 2017177779A1 CN 2017076030 W CN2017076030 W CN 2017076030W WO 2017177779 A1 WO2017177779 A1 WO 2017177779A1
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WO
WIPO (PCT)
Prior art keywords
led
array
substrate
area
electrode
Prior art date
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Ceased
Application number
PCT/CN2017/076030
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English (en)
Chinese (zh)
Inventor
刘召军
彭灯
张珂
莫炜静
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sun Yat Sen University
SYSU CMU Shunde International Joint Research Institute
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Sun Yat Sen University
SYSU CMU Shunde International Joint Research Institute
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Filing date
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Publication of WO2017177779A1 publication Critical patent/WO2017177779A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling

Definitions

  • the invention relates to the field of LED array display preparation, and more particularly to a method for preparing a large area electrode LED array.
  • LED display screen as a new medium, sports glowing text, is more attractive to attract attention, large amount of information, updated at any time, has very good advertising and notice effects.
  • LED screens are simpler than neon lights, easy to install and use, more effects change, and can update content at any time. It is a good indoor and outdoor visual media.
  • LED screens are high-tech electronic products, which are relatively expensive and have been used in government and units. Technology continues to advance, prices continue to decrease, and assembly and maintenance are simpler.
  • the small LED strip screen because of its low price, simple installation and use, is slowly accepted by the public, gradually enters large and small stores, and the application is more popular, and gradually becomes popular.
  • the LED display screen the basic components mainly include the following: display unit board, power supply, control card, control unit.
  • the display unit board is mainly composed of an LED array, and the LED array is encapsulated by a plurality of LED light-emitting points with resin or plastic. According to the working environment of the LED display (indoor and outdoor), the luminous intensity of each LED light-emitting point and the interval between two adjacent LEDs are also different.
  • the traditional LED array is produced and produced by using a certain amount of individually packaged LED unit modules or integrally packaged modules.
  • Individually packaged LED unit packages include leaded packages, planar packages, surface mount packages, piranha packages, power packages, and more. Although these packages can flexibly select a single LED operation mode and environment, when a certain amount of individually packaged LEDs are arranged in a matrix to form an LED display screen, each LED unit of the individual package has a certain volume, resulting in two adjacent The spacing of the LEDs cannot be minimized, so that the resolution of the LED display cannot be further improved, resulting in poor display performance.
  • the LED array packaged by the integral plastic sealing method can reduce the interval between two adjacent LEDs to some extent and improve the resolution and display effect of the LED display screen, usually the interval of the integrally molded LED array is fixed, and is sealed by a plastic package. The mold is decided. At the same time, the production process of using the above two methods to produce the LED array is to place the LED units one by one in the pixels of the corresponding LED array, and the production efficiency is relatively low in the manufacture and production of large-screen LED array displays.
  • the present invention provides a method for preparing a large-area electrode LED array.
  • a large-area electrode LED array preparation method comprises a large-area single-electrode LED preparation method and a large-area two-electrode LED preparation method, including:
  • the LED wafer array attached to the blue film or the UV film is directly connected to the corresponding design substrate for electrode connection after being repeatedly expanded to a required interval, and then driven by the peripheral circuit to be entirely arranged on the substrate.
  • LED wafer arrays enable the fabrication of large area LED arrays.
  • the LED device structure includes a single electrode and a two-electrode structure, and the corresponding design substrate and connection manner are different according to the structure of the LED device.
  • the LED wafer array attached to the blue film or the UV film is subjected to multiple times of crystallizing to achieve the required interval, based on the user-designed substrate, in the corresponding pad
  • the silver paste or the solder is sprayed on the area, and the bottom electrode of each LED wafer of the expanded LED wafer array is calibrated with the pad area on the substrate, and the LED wafer array and the substrate are directly calibrated. Pressing, the pressed LED wafer array and substrate are placed in an incubator to cure the silver paste or solder, and after curing, the blue film or the UV film is removed, and then the pads on the conductive film are on the substrate.
  • the LED wafer array is calibrated and directly pressed after calibration;
  • the process is as follows: after multiple times of crystallizing the LED wafer array attached to the blue film or the UV film to achieve the required interval, the substrate is designed to be expanded after the user-designed substrate
  • the bottom electrode of each LED wafer of the LED wafer array is calibrated with the pad area on the substrate, and the LED wafer array and the substrate are directly pressed after calibration, and then the pressed LED wafer array and lining
  • the bottom is placed in an incubator to cure the silver paste or solder, and the blue film or UV film is removed after curing.
  • the material of the substrate and the conductive film is a silicon wafer or a PCB board.
  • a pad area of the substrate is etched with a plurality of equally spaced column metal lines, and the conductive film is etched with equal-distance row metal lines of the same number as the column metal lines.
  • the row metal line is perpendicular to the column metal line; each of the metal lines is provided with a plurality of equally spaced window opening areas, wherein the window opening area has silver glue or sprayed with solder; adjacent column metal lines are spaced apart from adjacent row metal lines. The spacing of the lines is equal.
  • the pad region of the substrate is etched with vertical row metal lines and column metal lines, and the intersection portions of the row metal lines and the column metal lines are separated by the isolation film, and the row metal lines are separated.
  • the spacing of adjacent column metal lines is equal to the spacing of adjacent row metal lines, and each metal wire is provided with a plurality of equally spaced window opening areas, and the window opening area has silver glue or spray There is solder.
  • the line width of the metal lines, the spacing of adjacent metal lines, the spacing of the windowing areas, and the size of the area can be varied according to the size of the required LED wafer volume and the spacing requirements of the array.
  • the material of the column metal line and the row metal line is a conductor material
  • the conductor material may be aluminum, copper or other conductor material.
  • the LED wafer power, the wavelength of the light, and the volume in the LED wafer array used above are not limited. That is, the LED wafer may be a visible light LED or an invisible light LED.
  • the technical solution of the present invention has the beneficial effects that the method for preparing a large-area electrode LED array of the present invention is in the field of flat panel display and LED array display preparation, and the problem to be solved is to overcome the conventional LED.
  • Array displays have lower resolution, poor thermal performance, and lower manufacturing and production efficiency.
  • the invention adopts a preparation scheme of an LED wafer level array, adopts and expands a crystal expansion technology-multiple crystal expansion technology, and designs and implements a bottom electrode for a single electrode LED wafer according to different electrode distributions of the LED device structure.
  • the substrate and a conductive film connecting the top electrodes are connected to the substrate of the positive electrode and the negative electrode at the electrode distribution surface thereof for the two-electrode LED wafer.
  • the production efficiency of the LED array can be improved, and the two electrodes of each LED unit of the single-electrode LED array are contacted by using a single-electrode substrate and a conductive film.
  • the two-electrode substrate connects the two electrodes of the two-electrode LED array distributed on the same side, and the heat dissipation performance is greatly improved.
  • the wafer-level LED array preparation scheme implemented by the present invention is largely The display resolution of the LED array is improved, the production flexibility in each application is increased, and the display requirement can be well satisfied.
  • Figure 1 is a schematic diagram of a typical single-electrode and two-electrode LED wafer.
  • Figure 3 is a side elevational view of the electrical connection of a single single electrode LED wafer to a substrate.
  • Figure 4 is a side view of the electrical connection of a single two-electrode LED wafer to a substrate.
  • Figure 5 is a flow chart of the preparation method of the present invention.
  • a large-area single-electrode LED array preparation method the specific implementation content and method are as follows:
  • FIG. 1 is a schematic diagram of a typical single-electrode LED wafer and a two-electrode LED wafer.
  • the P electrode is located in the crystal.
  • the N electrode layer is located at the bottom of the wafer, and the N electrode is located above the wafer, and the P electrode layer is located below the wafer; for the two electrodes, as shown in Fig. 1(b), the P electrode and the N electrode are located.
  • the LED wafer when a turn-on voltage and a turn-on current are applied between the PN electrodes, the LED wafer can operate normally (light-emitting).
  • the amount of the on-voltage and current is determined by the material composition of the LED wafer, and the power of the LED wafer composed of different materials is generally different.
  • the LED array used in this embodiment is an array of LED wafers attached to a blue film or a UV film provided by a company that produces LED wafers. Since the adhesion provided by the LED wafer company is small in the interval of the LED wafer array, in order to enable the LED array to be better combined with the electrode contact points on the substrate in the subsequent bonding step with the substrate and the conductive film, The crystal growth treatment is performed according to the position of the electrode contact point on the substrate and the interval between adjacent electrode contact points. Due to the limited ductility of the general LED blue film or UV film, the LED wafer array adhered to the blue film or the UV film has a small single-spreading interval.
  • the LED wafer array attached to the blue film or the UV film can be repeatedly expanded---------------
  • the arrangement (position, spacing) of the LED wafer array obtained until the crystallizing is processed can be equivalent to the position and spacing of the electrode contact points on the substrate, and the crystal expansion diagram is as shown in FIG. 2 .
  • FIG. 3 A schematic diagram of the connection between a single LED pixel of a large-area single-electrode LED array and a substrate and a conductive film according to the present invention is shown in FIG. 3, after a plurality of crystal expansion processes, an artificially controlled blue film or a UV film and a single film are used.
  • the electrode faces of the electrode LED wafer array are bonded to facilitate direct bonding of the bottom of the single electrode LED wafer array attached to the blue film or the UV film to the substrate.
  • the surface of the substrate is coated with corresponding connecting wires and equally spaced contact pads with the array after the crystallizing, so as to spray or dispense the pads on the substrate (conductive silver paste), and then in a certain environment
  • the single-electrode LED wafer array electrodes are directly aligned to the pads on the substrate.
  • the connection of the bottom electrode of each LED pixel of the large area single-electrode LED array to the pad on the substrate is achieved.
  • connection of the conductive film to the upper electrode of each LED pixel of the LED wafer array is achieved.
  • the large-area LED wafer array display system is established, and then the display functions of the entire LED wafer can be realized by connecting the output driving ports of the external driving circuit to the metal wires on the substrate and the conductive film, respectively.
  • the LED device of the embodiment has greatly improved heat dissipation performance, and the interval of the LED array can be flexibly adjusted in the crystal expansion process, and the design of the substrate and the conductive film can also be manually adjusted. Can better meet people's design needs.
  • Figure 4 is a side view of a two-electrode LED wafer electrically connected to a substrate.
  • an artificially controlled blue or UV film is bonded to the bottom of the two-electrode LED wafer array to enable the LED
  • the two electrodes are facing down to achieve a bond with the substrate.
  • the substrate is covered or etched with pads corresponding to the two-electrode LED array, and tin or glue is sprayed on the pads, and under certain conditions, the LEDs directly attached to the blue film or the UV film are directly attached.
  • the wafer array is aligned with the substrate, and after curing, the blue film or the UV film is removed by ultraviolet irradiation. This causes the LED wafer array to be transferred to the substrate and bonded to the substrate for external electrical driving.
  • FIG. 1 A series of steps of the steps implemented by the present invention are shown in FIG. First, the LED wafer array attached to the blue film or UV film provided by the LED wafer manufacturer is subjected to multiple times of crystallizing to achieve the required interval, and for the single-electrode LED array, the solder is soldered on the corresponding design substrate. Place silver paste on the disk area or spray solder.
  • the bottom electrode of each LED wafer of the expanded LED wafer array and the pad area on the substrate after dispensing or soldering After calibration, the LED wafer array and the substrate are directly pressed together, and then the pressed LED wafer array and substrate are placed in an incubator to cure the silver paste or the solder, and after curing, the blue film or the UV film is removed, and then the blue film or the UV film is removed.
  • the pad area on the conductive film is aligned with the LED wafer array on the substrate, and is directly pressed under certain conditions after calibration.
  • the electrodes of each LED wafer of the expanded LED wafer array are directly combined with the pad area on the substrate to be calibrated, and then the blue film or the UV film is removed.
  • the LED wafer array originally adhered to the blue film or the UV film is expanded into a gap and directly transferred to the corresponding substrate to be connected to the substrate or the conductive film, and can be implemented by the external scan driving circuit.
  • the array is scanned and driven to realize the preparation of a large-area LED array.
  • the anode and cathode electrodes are distributed on the same side of the LED wafer, and the substrate is electrically connected to the large-area LED array.
  • the surface of the substrate is plated with a metal film of the corresponding anode and cathode electrodes of the LED wafer, and solder is applied to each LED anode and cathode electrode contact point on the surface of the substrate, and then the LED after the previous crystal expansion is applied under a certain environment.
  • the array directly and precisely aligns the soldering regions on the corresponding substrate at one time, thereby realizing the purpose of physically and electrically connecting the large-area LED array directly with the external substrate.
  • the two-electrode LED wafer attached to the blue film needs to have the electrode side facing up, so that the electrode of each wafer of the LED array and the metal pad on the substrate can be accurately realized. Bonding, and combining the LED wafer electrodes with the metal pads on the substrate, the illuminated side faces up.
  • the substrate has 10 row metal lines numbered 1, 2, 3, ..., 10 and column metal lines numbered a, b, c, ..., j, ten lines
  • the metal lines and the ten column metal lines are respectively etched on the surface of the substrate, and the intersections of the row metal lines and the column metal lines are separated by a silicon oxide film, so that the row and metal lines do not physically and electrically connect.
  • Open the window at a certain interval of each row of metal lines that is, open a contact area of a certain area with equal spacing on each row and line, and open on the intersecting and column lines of the row and the metal lines.
  • the window region is plated with a certain thickness of solder to make corresponding electrode contact with the expanded LED array under certain conditions, thereby realizing physical and electrical connection between each unit of the LED array and an external circuit, facilitating external driving.
  • the circuit performs scanning independent addressing to drive each LED unit to operate.
  • the present invention designs and proposes a substrate for connecting the bottom electrode of the large-area LED array and a conductive film connecting the top electrodes.
  • the substrate material is silicon dioxide or FR4 material PCB, and 10 column metal wires numbered a, b, c, ..., j are etched on the surface of the substrate, and 10 openings are provided on each column metal wire.
  • the 10 window opening areas are equally spaced.
  • the conductive silver glue can be spotted by a dispenser under a certain temperature environment, or the solder can be sprayed with a tin spray machine to directly press the previously obtained LED array directly onto the substrate.
  • each LED unit in the LED array is strictly aligned with the dispensing or tinning on the substrate, and the spacing between any two adjacent LEDs in the LED array is also independent of any phase on the substrate.
  • the spacing between adjacent two window-opening areas is the same, so as to ensure that the electrodes of each LED unit in the LED array are combined with the window-opening area on the corresponding substrate, so that each column of LEDs on the substrate can be aligned with the column metal
  • the wires establish the purpose of physical and electrical connections, and thus the external circuitry can drive the LED arrays of the present invention by row and column scanning.
  • the LED array conductive film of the present invention is provided with row metal wires having the same specifications of the substrate and the number of the metal wires on the substrate.
  • the LED array conductive film according to the present invention includes the numbers 1, 2, 3... 10 total 10 lines, after the single-electrode LED array is pressed and connected with the substrate, the blue film originally adhered to the LED array is removed, and under certain conditions, the conductive film is directly aligned with the LED array.
  • the top electrodes are combined to achieve integration of the LED array with the substrate and the conductive film. Scanning driving of the integrated LED array can be achieved by connecting the drive outputs of the external circuits to the metal lines of the substrate and the conductive film, respectively.

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Abstract

L'invention concerne un procédé de préparation pour un réseau de DEL à électrodes de grande surface, comportant les étapes consistant à : une fois qu'un réseau de tranches de DEL fixé sur un film bleu ou un film UV atteint un intervalle souhaité au moyen de multiples expansions de tranches, permettre une connexion d'électrodes entre le réseau de tranches de DEL et un substrat de conception correspondant directement d'une manière traversante unique, puis commander la totalité du réseau de DEL disposé sur le substrat au moyen d'un circuit périphérique, de manière à préparer un réseau de DEL de grande surface. Les structures de dispositif à DEL comportent une structure à électrode unique et une structure à double électrode. Selon différentes structures de dispositif à DEL, les substrats de conception correspondants et les approches de connexion sont également différents. La solution de préparation pour un réseau de DEL au niveau de la tranche améliore sensiblement la résolution d'affichage d'un réseau de DEL, augmente la flexibilité de production dans différentes applications, et peut ainsi satisfaire à des exigences d'affichage. Bien que les coûts de fabrication d'un réseau de DEL unique puissent être élevés, une fois que la production en série est mise en place, les coûts seront considérablement réduits en raison de l'omission de l'étape d'emballage pour une seule unité de DEL dans le cadre de la production en série.
PCT/CN2017/076030 2016-04-12 2017-03-09 Procédé de préparation pour réseau de del à électrodes de grande surface Ceased WO2017177779A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610223901.6A CN105720146B (zh) 2016-04-12 2016-04-12 一种大面积电极led阵列制备方法
CN201610223901.6 2016-04-12

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WO2017177779A1 true WO2017177779A1 (fr) 2017-10-19

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CN109920746A (zh) * 2018-12-26 2019-06-21 广东欧美亚智能装备有限公司 一种全自动扩晶机
CN112492755A (zh) * 2020-11-02 2021-03-12 江西旭昇电子有限公司 一种无铅喷锡板微小防焊定义焊盘的制作方法
CN112967999A (zh) * 2020-09-27 2021-06-15 苏州苏纳光电有限公司 一种用于半导体芯片扩膜的制备方法
CN113451158A (zh) * 2021-04-25 2021-09-28 福建天电光电有限公司 覆晶封装结构及其制作工艺
CN114530539A (zh) * 2020-11-23 2022-05-24 深圳市洲明科技股份有限公司 一种led固晶系统及其固晶方法
CN114664689A (zh) * 2021-12-03 2022-06-24 江苏稳润光电有限公司 一种数码显示类模组led器件制备用预处理扩晶设备
CN114669496A (zh) * 2022-04-24 2022-06-28 江西兆驰半导体有限公司 一种led芯片分选方法

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CN105720146B (zh) * 2016-04-12 2018-08-31 中山大学 一种大面积电极led阵列制备方法
CN106374008B (zh) * 2016-09-08 2018-01-26 广东顺德中山大学卡内基梅隆大学国际联合研究院 一种大面积传感器阵列的制备方法
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CN108364581B (zh) * 2018-03-29 2020-09-15 深圳市思坦科技有限公司 一种发光二极管微显示屏的制备方法及微显示屏
CN115884846B (zh) * 2021-06-22 2026-03-13 京东方科技集团股份有限公司 一种助焊剂、基板及其制作方法、装置
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CN109920746A (zh) * 2018-12-26 2019-06-21 广东欧美亚智能装备有限公司 一种全自动扩晶机
CN112967999A (zh) * 2020-09-27 2021-06-15 苏州苏纳光电有限公司 一种用于半导体芯片扩膜的制备方法
CN112967999B (zh) * 2020-09-27 2022-09-20 苏州苏纳光电有限公司 一种用于半导体芯片扩膜的制备方法
CN112492755A (zh) * 2020-11-02 2021-03-12 江西旭昇电子有限公司 一种无铅喷锡板微小防焊定义焊盘的制作方法
CN112492755B (zh) * 2020-11-02 2022-09-27 江西旭昇电子有限公司 一种无铅喷锡板微小防焊定义焊盘的制作方法
CN114530539A (zh) * 2020-11-23 2022-05-24 深圳市洲明科技股份有限公司 一种led固晶系统及其固晶方法
CN113451158A (zh) * 2021-04-25 2021-09-28 福建天电光电有限公司 覆晶封装结构及其制作工艺
CN114664689A (zh) * 2021-12-03 2022-06-24 江苏稳润光电有限公司 一种数码显示类模组led器件制备用预处理扩晶设备
CN114669496A (zh) * 2022-04-24 2022-06-28 江西兆驰半导体有限公司 一种led芯片分选方法

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